JP2901572B2 - Semiconductor device wire bonding method - Google Patents

Semiconductor device wire bonding method

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Publication number
JP2901572B2
JP2901572B2 JP9141436A JP14143697A JP2901572B2 JP 2901572 B2 JP2901572 B2 JP 2901572B2 JP 9141436 A JP9141436 A JP 9141436A JP 14143697 A JP14143697 A JP 14143697A JP 2901572 B2 JP2901572 B2 JP 2901572B2
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JP
Japan
Prior art keywords
group
bonding
aluminum electrodes
centripetal
aluminum
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Expired - Fee Related
Application number
JP9141436A
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Japanese (ja)
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JPH10335367A (en
Inventor
一郎 古田
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Fukuoka Nippon Denki Kk
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Fukuoka Nippon Denki Kk
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Priority to JP9141436A priority Critical patent/JP2901572B2/en
Publication of JPH10335367A publication Critical patent/JPH10335367A/en
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Publication of JP2901572B2 publication Critical patent/JP2901572B2/en
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は半導体装置のワイヤ
ボンディング方法に関する。The present invention relates to a wire bonding method for a semiconductor device.

【０００２】[0002]

【従来の技術】従来の半導体装置においては、当該半導
体装置の半導体素子の電極とリードフレームの内部リー
ドとの接合方法として、ワイヤボンディング方法が用い
られている。当該ワイヤボンディング方法による超音波
併用熱圧着ボンディング方式においては、図３に、半導
体装置の平面配置例、および当該半導体装置に対するボ
ンディング用のトランスデューサの配置状態が模式的に
示されるように、アイランド４上には半導体素子１が配
置されており、当該半導体素子１における第１辺Ｈ1 、
第２辺Ｈ2 、第３辺Ｈ3 および第４辺Ｈ4 に対応する内
部リード３は、それぞれ当該半導体素子１の第１辺Ｈ
1 、第２辺Ｈ2 、第３辺Ｈ3 および第４辺Ｈ4 におい
て、第群および第群、第群および第群、第群
および第群、および第群および第群に区分されて
配置されるアルミ電極２に対し、それぞれワイヤ５によ
り接続されている。そして、当該半導体素子１に対して
は、当該半導体素子１の上部に、超音波振動方向７に沿
って振動するボンディング用のトランスデューサ６が、
模式的に斜視状態で示されている。2. Description of the Related Art In a conventional semiconductor device, a wire bonding method is used as a bonding method between an electrode of a semiconductor element of the semiconductor device and an internal lead of a lead frame. In the ultrasonic bonding thermocompression bonding method using the wire bonding method, as shown in FIG. 3, an example of a planar arrangement of a semiconductor device and an arrangement state of a bonding transducer with respect to the semiconductor device are schematically illustrated. A semiconductor element 1 is disposed on the first side H 1 of the semiconductor element 1 ,
The internal leads 3 corresponding to the second side H 2 , the third side H 3, and the fourth side H 4 respectively correspond to the first side H of the semiconductor element 1.
1 , the second side H 2 , the third side H 3, and the fourth side H 4 are divided and arranged into a first group and a second group, a first group and a second group, a first group and a second group, and a first group and a second group. The aluminum electrodes 2 are connected by wires 5 respectively. Then, for the semiconductor element 1, a bonding transducer 6 vibrating along the ultrasonic vibration direction 7 is provided above the semiconductor element 1.
It is schematically shown in a perspective state.

【０００３】図３において、半導体素子１に配置される
アルミ電極２と内部リード３とをリード５により接合す
る場合には、超音波振動方向７に沿って振動するトラン
スデューサ６に装着されるボンディングキャピラリを介
して、ボンディングボールとアルミ電極との接合が、当
該超音波振動および加熱作用が併用される上記超音波併
用熱圧着ボンディング方式によって行われている。この
場合における加熱方法としては、半導体素子１は、ヒー
ターにより加熱される加熱ステージの上に載置されてお
り、当該加熱ステージにより、２００〜２４０°Ｃ程度
に加熱される。また、アルミ電極２の相互間のピッチが
１５０μ以下の狭いピッチの半導体素子１においては、
各アルミ電極２に対するボンディング処理手順として
は、コーナーのアルミ電極２から、順次半導体素子中央
部のアルミ電極２に向って接合を行う向心ボンディング
方法が採用されている。図３に示されるように、コーナ
ーのアルミ電極２から半導体素子１の中央部のアルミ電
極２に至るまで、順次向心ボンディングを行う際のアル
ミ電極の範囲は、それぞれ前述のように個別の群として
区分されており、従来のボンディング方法における接合
順序の１例としては、第１辺Ｈ1 に対応する第群、第
群、第２辺Ｈ2 に対応する第群、第群、第３辺Ｈ
3 に対応する第群、第群、そして第４辺Ｈ4 に対応
する第群、第群の順に、それぞれの群に含まれるア
ルミ電極２に対する接合が行われる。In FIG. 3, when an aluminum electrode 2 arranged on a semiconductor element 1 and an internal lead 3 are joined by a lead 5, a bonding capillary mounted on a transducer 6 vibrating along an ultrasonic vibration direction 7 is used. The bonding between the bonding ball and the aluminum electrode is performed by the ultrasonic combined thermo-compression bonding method in which the ultrasonic vibration and the heating action are used together. As a heating method in this case, the semiconductor element 1 is mounted on a heating stage heated by a heater, and is heated to about 200 to 240 ° C. by the heating stage. Further, in the semiconductor element 1 having a narrow pitch between the aluminum electrodes 2 of 150 μm or less,
As a bonding procedure for each of the aluminum electrodes 2, a centripetal bonding method in which bonding is performed sequentially from the aluminum electrode 2 at the corner to the aluminum electrode 2 at the center of the semiconductor element is adopted. As shown in FIG. 3, from the corner aluminum electrode 2 to the center aluminum electrode 2 of the semiconductor element 1, the range of the aluminum electrodes when performing the centripetal bonding sequentially is as described above for each individual group. are divided as, as one example of a junction sequence in a conventional bonding method, the group corresponding to the first side H 1, second group, third group corresponding to the second side H 2, third group, a third side H
The group corresponding to 3, the group and the group corresponding to the fourth side H 4,, in the order of the group, is bonded against the aluminum electrode 2 that is included in each group is performed.

【０００４】[0004]

【発明が解決しようとする課題】上述した従来の半導体
装置およびそのボンディング方法においては、図３に示
されるように、超音波振動方向７に対して平行な第２辺
Ｈ2 および第４辺Ｈ4 に対応するアルミ電極２に対する
接合強度は、超音波振動方向７に対して直交する第１辺
Ｈ1 および第３辺Ｈ3 に対応するアルミ電極２に対する
接合強度よりも低下するという欠点かある。In the above-described conventional semiconductor device and its bonding method, as shown in FIG. 3, the second side H 2 and the fourth side H parallel to the ultrasonic vibration direction 7 are used. 4 has a disadvantage that the bonding strength to the aluminum electrode 2 corresponding to the first side H 1 and the third side H 3 orthogonal to the ultrasonic vibration direction 7 is lower than the bonding strength to the aluminum electrode 2. .

【０００５】その理由は、アルミ電極２の相互間にピッ
チに関連して、超音波振動方向７に対して平行な第２辺
Ｈ2 および第４辺Ｈ4 に対応するアルミ電極２に対する
超音波振動による接合効率が、超音波振動方向７に対し
て直交する第１辺Ｈ1 および第３辺Ｈ3 に対応するアル
ミ電極２に対する超音波振動による接合効率よりも低い
ことによる。[0005] The reason for this is that, in relation to the pitch between the aluminum electrodes 2, the ultrasonic waves are applied to the aluminum electrodes 2 corresponding to the second side H 2 and the fourth side H 4 parallel to the ultrasonic vibration direction 7. This is because the joining efficiency due to the vibration is lower than the joining efficiency due to the ultrasonic vibration to the aluminum electrode 2 corresponding to the first side H 1 and the third side H 3 orthogonal to the ultrasonic vibration direction 7.

【０００６】また、第１辺Ｈ1 、第２辺Ｈ2 、第３辺Ｈ
3 および第４辺Ｈ4 の各群の順に、順次アルミ電極に対
する接合を行った場合には、最終接合辺である第４辺Ｈ
4 においては、他の辺に比較してボンディングボールと
アルミ電極との間の接合強度が低下する状態となり、こ
れにより、各辺間における接合強度に差異が生じ、各辺
の接合強度にアンパランスを生じるという欠点がある。The first side H 1 , the second side H 2 , and the third side H
3 and the order of each group of the fourth side H 4, when performing conjugation to sequentially aluminum electrode, a fourth side H is the final joining edge
In (4) , the bonding strength between the bonding ball and the aluminum electrode is reduced as compared with the other sides, thereby causing a difference in the bonding strength between each side, and an imbalance in the bonding strength between each side. There is a disadvantage that it occurs.

【０００７】その理由は、トランスデューサを介して、
半導体素子を負荷として断続的に超音波振動を与え続け
ることにより、半導体素子をリードフレームのアイラン
ドに圧着しているマウント材の弾性率が経時的に低下
し、特に当該弾性率の経時的低下が漸次増大する最終接
合辺においては、半導体素子と超音波振動が共振するこ
とにより、超音波振動による接合に対する寄与効率が低
下することによる。[0007] The reason is, through the transducer,
By continuously applying the ultrasonic vibration intermittently with the semiconductor element as a load, the elasticity of the mounting material that presses the semiconductor element to the island of the lead frame decreases over time, and in particular, the elasticity decreases over time. The reason for this is that the ultrasonic vibration resonates with the semiconductor element on the gradually increasing final bonding side, and the contribution efficiency of the ultrasonic vibration to the bonding decreases.

【０００８】更に、半導体素子の寸法およびアルミ電極
間のピッチが縮小化するに伴ない、上記の２つの欠点が
より一層顕在化して、半導体パッケージの超多ピン化な
らびに微細化を実現する上で、著しい障害課題となると
いう欠点がある。Further, as the dimensions of the semiconductor element and the pitch between the aluminum electrodes are reduced, the above two drawbacks become more apparent, and the realization of an ultra-high pin count and miniaturization of the semiconductor package is required. However, there is a disadvantage that it becomes a significant obstacle problem.

【０００９】その理由としては、半導体素子の微細化に
よって、接合用のボンディングボールとアルミ電極との
間の接合強度における、各辺間のバラツキがより一層顕
著となり、当該接合強度が低下する辺においては、ボン
ディング時にボンディングボールがアルミ電極から剥離
して、ボンディング処理が不可能になる場合があり得る
ことによる。The reason for this is that, due to the miniaturization of the semiconductor element, the variation in the bonding strength between the bonding ball and the aluminum electrode between the sides becomes even more remarkable, and in the side where the bonding strength is reduced. This is because the bonding ball may peel off from the aluminum electrode during bonding, making the bonding process impossible.

【００１０】本発明の目的は、上記の欠点を解決して、
超音波併用熱圧着方式によるワイヤボンディング処理に
おいて、ボンディングボールと半導体素子のアルミ電極
間の接合強度にバラツキが生じることなく安定した接合
処理を行い、これによる半導体素子の高信頼性を確保し
て、超多ピン化ならびに微細化の実現可能な半導体装置
およびそのワイヤレスボンディン方法を提供することに
ある。An object of the present invention is to solve the above-mentioned drawbacks,
In the wire bonding process using the thermocompression bonding method with ultrasonic waves, the bonding process between the bonding ball and the aluminum electrode of the semiconductor element is performed without any variation in the bonding strength, thereby ensuring the high reliability of the semiconductor element. An object of the present invention is to provide a semiconductor device capable of realizing ultra-high pin count and miniaturization and a wireless bonding method thereof.

【００１１】[0011]

【課題を解決するための手段】第１の発明の半導体装置
のワイヤボンディング方法は、半導体装置のアルミ電極
を内部リードにワイヤ接続する超音波併用熱圧着ボンデ
ィング方法において、方形の外周が単１方向の周回方向
に沿って第１辺、第２辺、第３辺および第４辺として規
定され、ボンディング時における超音波振動方向に対し
て方向が直交する辺が前記第１辺および前記第３辺とし
て規定されて、当該ボンディング時における超音波振動
方向に対して方向が一致する辺が前記第２辺および前記
第４辺として規定されるワイヤボンディング対象の半導
体素子に対応して、前記各辺に配置されるアルミ電極
を、それぞれ前記単１方向の周回方向に沿って第１群お
よび第２群にグルーブ区分分割する第１のステップと、
前記第２辺の第１群のアルミ電極に対して向心ボンディ
ングを行う第２のステップと、前記第４辺の第１群のア
ルミ電極に対して向心ボンディングを行う第３のステッ
プと、前記第２辺の第２群のアルミ電極に対して向心ボ
ンディングを行う第４のステップと、前記第４辺の第２
群のアルミ電極に対して向心ボンディングを行う第５の
ステップと、前記第１辺の第２群のアルミ電極に対して
向心ボンディングを行う第６のステップと、前記第３辺
の第２群のアルミ電極に対して向心ボンディングを行う
第７のステップと、前記第１辺の第１群のアルミ電極に
対して向心ボンディングを行う第８のステップと、前記
第３辺の第１群のアルミ電極に対して向心ボンディング
を行う第９のステップと、を少なくとも有することを特
徴としてい。According to a first aspect of the present invention, there is provided a wire bonding method for a semiconductor device, comprising: an ultrasonic combined thermo-compression bonding method in which an aluminum electrode of the semiconductor device is wire-connected to an internal lead; Are defined as a first side, a second side, a third side, and a fourth side along the circling direction, and the sides perpendicular to the ultrasonic vibration direction during bonding are the first side and the third side. And the side whose direction coincides with the ultrasonic vibration direction at the time of the bonding corresponds to the semiconductor element to be wire-bonded defined as the second side and the fourth side. A first step of dividing the arranged aluminum electrodes into a first group and a second group along the circumferential direction of the single direction, respectively;
A second step of performing centripetal bonding on the first group of aluminum electrodes on the second side, and a third step of performing centripetal bonding on the first group of aluminum electrodes on the fourth side; A fourth step of performing centripetal bonding on a second group of aluminum electrodes on the second side;
A fifth step of performing centripetal bonding on the group of aluminum electrodes, a sixth step of performing centripetal bonding on the second group of aluminum electrodes on the first side, and a second step of performing second bonding on the third side. A seventh step of performing centripetal bonding on the group of aluminum electrodes, an eighth step of performing centripetal bonding on the first group of aluminum electrodes on the first side, and a first step of performing third bonding on the third side. And a ninth step of performing centripetal bonding on the group of aluminum electrodes.

【００１２】また、第２の発明の半導体装置のワイヤボ
ンディング方法は、半導体装置のアルミ電極を内部リー
ドにワイヤ接続する超音波併用熱圧着ボンディング方法
において、方形の外周が単１方向の周回方向に沿って第
１辺、第２辺、第３辺および第４辺として規定され、ボ
ンディング時における超音波振動方向に対して方向が直
交する辺が前記第１辺および前記第３辺として規定され
て、当該ボンディング時における超音波振動方向に対し
て方向が一致する辺が前記第２辺および前記第４辺とし
て規定されるワイヤボンディング対象の半導体素子に対
応して、前記各辺に配置されるアルミ電極を、それぞれ
前記単１方向の周回方向に沿って第１群、第２群および
第３群にグルーブ区分分割する第１のステップと、前記
第２辺の第１群のアルミ電極に対して向心ボンディング
を行う第２のステップと、前記第４辺の第１群のアルミ
電極に対して向心ボンディングを行う第３のステップ
と、前記第２辺の第３群のアルミ電極に対して向心ボン
ディングを行う第４のステップと、前記第４辺の第３群
のアルミ電極に対して向心ボンディングを行う第５のス
テップと、前記第２辺の第２群のアルミ電極に対して向
心ボンディングを行う第６のステップと、前記第４辺の
第２群のアルミ電極に対して向心ボンディングを行う第
７のステップと、前記第１辺の第３群のアルミ電極に対
して向心ボンディングを行う第８のステップと、前記第
３辺の第３群のアルミ電極に対して向心ボンディングを
行う第９のステップと、前記第１辺の第１群のアルミ電
極に対して向心ボンディングを行う第１０のステップ
と、前記第３辺の第１群のアルミ電極に対して向心ボン
ディングを行う第１１のステップと、前記第１辺の第２
群のアルミ電極に対して向心ボンディングを行う第１２
のステップと、前記第３辺の第２群のアルミ電極に対し
て向心ボンディングを行う第１３のステップと、を少な
くとも有することを特徴としている。According to a second aspect of the present invention, there is provided a wire bonding method for a semiconductor device, wherein the aluminum outer electrode of the semiconductor device is connected to the internal lead by wire. Along the first side, the second side, the third side, and the fourth side, and the sides perpendicular to the ultrasonic vibration direction at the time of bonding are defined as the first side and the third side. The aluminum arranged on each side corresponding to the semiconductor element to be wire-bonded whose side coincident with the ultrasonic vibration direction at the time of the bonding corresponds to the second side and the fourth side. A first step of dividing the electrode into a first group, a second group, and a third group along the circumferential direction of the single direction, and a first group of the second side; A second step of performing centripetal bonding on the Lumi electrode, a third step of performing centripetal bonding on the first group of aluminum electrodes on the fourth side, and a third step of performing third bonding on the second group of the second side. A fourth step of performing centripetal bonding on the aluminum electrode, a fifth step of performing centripetal bonding on the third group of aluminum electrodes on the fourth side, and a second step of performing a centroid bonding on the second group of the second side. A sixth step of performing centripetal bonding on the aluminum electrode, a seventh step of performing centripetal bonding on the second group of aluminum electrodes on the fourth side, and a third step of performing third bonding on the first side. An eighth step of performing centripetal bonding on the aluminum electrode, a ninth step of performing centripetal bonding on the third group of aluminum electrodes on the third side, and a ninth step of forming a first group on the first side. No.2 for centripetal bonding to aluminum electrodes 0 comprising the steps of, a eleventh step of centripetal bonding against the aluminum electrodes of the first group of the third side, the first of the first side 2
Twelfth that performs centripetal bonding on a group of aluminum electrodes
And a thirteenth step of performing centripetal bonding on the second group of aluminum electrodes on the third side.

【００１３】[0013]

【発明の実施の形態】次に、本発明について図面を参照
して説明する。Next, the present invention will be described with reference to the drawings.

【００１４】図１（ａ）は、本発明の半導体装置のワイ
ヤボンディング方法の１実施形態による半導体素子の平
面配置、および当該半導体素子に対するボンディング用
のトランスデューサの配置状態を模式的に示した図であ
り、図１（ｂ）は、図１（ａ）におけるＹ−Ｙ線断面の
要部および超音波励振の状況を模式的に示した図であ
る。図１（ａ）に示されるように、本実施形態適用によ
る半導体素子１は、アイランド４上に配置されており、
当該半導体素子１に対する第１辺Ｈ1 、第２辺Ｈ2 、第
３辺Ｈ3 および第４辺Ｈ4 に対応して、それぞれに配置
される内部リード３は、それぞれ当該半導体素子１にお
いて、〔第群および第群〕、〔第群および第
群〕、〔第群および第群〕、および〔第群および
第群〕に区分されて配置されるアルミ電極２に対し
て、それぞれワイヤ５により接続されている。そして、
当該半導体素子１に対しては、当該半導体素子１の上部
に、超音波振動方向７に沿って振動するボンディング用
のトランスデューサ６が、模式的に斜視状態で示されて
いる。また、図１（ｂ）においては、アイランド４にマ
ウント材１０を介して載置される半導体素子１上のアル
ミ電極２に対応して、超音波振動方向７に沿って振動す
るトランスデューサ６に装着されているボンディングキ
ャピラリ８と、ボンディングボール９とが示されてい
る。更に、図２は、ワイヤボンディング処理時におけ
る、ボンディングキャピラリ８による圧着接合状態を示
す部分断面図であり、図２においては、圧着接合時に、
荷重Ｆが印加されるボンディングキャピラリ８と、アイ
ランド４にマウント材１０を介して載置される半導体素
子１と、ボンディングボール９との対応関係が示されて
いる。FIG. 1A is a diagram schematically showing a planar arrangement of a semiconductor element and an arrangement state of a bonding transducer with respect to the semiconductor element according to one embodiment of a wire bonding method for a semiconductor device of the present invention. FIG. 1B is a diagram schematically showing a main part of a section taken along line YY in FIG. 1A and a state of ultrasonic excitation. As shown in FIG. 1A, the semiconductor element 1 according to the present embodiment is disposed on an island 4,
The internal leads 3 arranged respectively corresponding to the first side H 1 , the second side H 2 , the third side H 3, and the fourth side H 4 with respect to the semiconductor element 1 are: The wires 5 are respectively applied to the aluminum electrodes 2 which are divided into [first and second groups], [first and second groups], [first and second groups], and [first and second groups]. It is connected. And
With respect to the semiconductor element 1, a bonding transducer 6 that vibrates along the ultrasonic vibration direction 7 is schematically shown in a perspective state above the semiconductor element 1. In FIG. 1B, the antenna 6 is mounted on the transducer 6 that vibrates along the ultrasonic vibration direction 7 corresponding to the aluminum electrode 2 on the semiconductor element 1 mounted on the island 4 via the mounting material 10. A bonding capillary 8 and a bonding ball 9 are shown. Further, FIG. 2 is a partial cross-sectional view showing a pressure bonding state by the bonding capillary 8 during a wire bonding process. In FIG.
The correspondence relationship between the bonding capillary 8 to which the load F is applied, the semiconductor element 1 mounted on the island 4 via the mounting material 10, and the bonding ball 9 is shown.

【００１５】図１（ａ）において、半導体素子１に配置
されるアルミ電極２と内部リード３とをワイヤ５により
接合する手順としては、まず、これらのアルミ電極２と
内部リード３との相互間の目合わせを行い、その後にお
いて、超音波振動方向７に対して長さ方向が一致してい
る第２辺Ｈ2 および第４辺Ｈ4 に含まれるアルミ電極２
と、これらのアルミ電極２に対応する内部リード３との
間のワイヤ５による接合処理が、それぞれ向心ボンディ
ング方法により順次行われ、次いで、超音波振動方向７
に対して長さ方向が直交している第１辺Ｈ1 および第３
辺Ｈ3 に含まれるアルミ電極２と、これらのアルミ電極
２に対応する内部リード３との間のワイヤ５による接合
処理が、それぞれ向心ボンディング方法により順次行わ
れる。In FIG. 1A, the procedure for joining the aluminum electrode 2 and the internal lead 3 disposed on the semiconductor element 1 with the wire 5 is as follows. After that, the aluminum electrode 2 included in the second side H 2 and the fourth side H 4 whose length direction coincides with the ultrasonic vibration direction 7
And the inner leads 3 corresponding to the aluminum electrodes 2 are sequentially joined by the wires 5 by the centripetal bonding method.
The first side H 1 and the third side whose length direction is orthogonal to
An aluminum electrode 2 included in the sides H 3, bonding process by the wire 5 between the inner leads 3 corresponding to these aluminum electrode 2 are respectively sequentially carried out by centripetal bonding method.

【００１６】本発明の特徴とするところは、アルミ電極
２と内部リード３とをワイヤ５により接合する手順とし
て、半導体素子１を負荷として断続的に超音波振動を与
え続けることにより、半導体素子１をリードフレームの
アイランド４に圧着されているマウント材１０（図２参
照）の弾性率の経時的低下に起因して、半導体素子１の
各辺において生じる接合強度のバラツキを抑制すること
ができる接合手順を採用していることにある。即ち、本
実施形態においては、上記のアルミ電極２と内部リード
３とをワイヤ５により接合するワイヤボンディング方法
としては、以下のような手順により接合が行われる。A feature of the present invention is that, as a procedure for joining the aluminum electrode 2 and the internal lead 3 with the wire 5, the semiconductor element 1 is continuously applied with ultrasonic vibration using the load as the load. Can be prevented from varying in bonding strength occurring on each side of the semiconductor element 1 due to a temporal decrease in the elastic modulus of the mounting material 10 (see FIG. 2) pressed to the island 4 of the lead frame. Is to adopt the procedure. That is, in the present embodiment, as the wire bonding method for bonding the aluminum electrode 2 and the internal lead 3 with the wire 5, the bonding is performed according to the following procedure.

【００１７】図１（ａ）において、まず、第２辺Ｈ2 の
群に含まれるアルミ電極２に対する接合が、向心ボン
ディング方法により順次行われ、次いで第４辺Ｈ4 の
群に含まれるアルミ電極２に対する接合が、同じく向心
ボンディング方法により順次行われる。次に、第２辺Ｈ
2 の群に含まれるアルミ電極２に対する接合が、向心
ボンディング方法により順次行われ、次いで第４辺Ｈ4
の群に含まれるアルミ電極２に対する接合が、向心ボ
ンディング方法により順次行われる。次に第１辺Ｈ1 の
群に含まれるアルミ電極２に対する接合が、向心ボン
ディング方法により順次行われ、次いで、第３辺Ｈ3 の
群に含まれるアルミ電極２に対する接合が、向心ボン
ディング方法により順次行われる。次に、第１辺Ｈ1 の
群に含まれるアルミ電極２に対する接合が、向心ボン
ディング方法により順次行われ、次いで、第３辺Ｈ3 の
群に含まれるアルミ電極２に対する接合が、向心ボン
ディング方法により順次行われる。即ち、アルミ電極２
と内部リード３とをワイヤ５により接合するワイヤボン
ディング方法においては、図１（ａ）に示されるよう
に、各辺における群→群→群→群→群→群
→群→群の順番において、それぞれの群に含まれる
アルミ電極に対し向心ボンディング方法により順次行わ
れる。この接合手順により、上述のように、半導体素子
１を負荷として断続的に超音波振動を与え続けることに
よって、半導体素子１をリードフレームのアイランド４
に圧着されているマウント材１０の弾性率の経時的低下
に起因する、半導体素子１の各辺における接合強度のバ
ラツキを低減することができるという効果が実現され
る。In FIG. 1A, first, bonding to the aluminum electrodes 2 included in the group of the second side H 2 is sequentially performed by a centripetal bonding method, and then the aluminum electrode 2 included in the group of the fourth side H 4 is bonded. Bonding to the electrode 2 is performed sequentially by the same centripetal bonding method. Next, the second side H
The bonding to the aluminum electrodes 2 included in the group No. 2 is sequentially performed by the centripetal bonding method, and then the fourth side H 4
Are sequentially joined by the centripetal bonding method. Next conjugation to the aluminum electrode 2 included in the first side group of an H 1 is performed sequentially by the centripetal bonding method, then conjugation to the aluminum electrode 2 is comprised in a group of third side H 3, centripetal bonding It is done sequentially by the method. Next, conjugation to the aluminum electrode 2 included in the first side group of an H 1 are sequentially performed by the centripetal bonding method, then conjugation to the aluminum electrode 2 is comprised in a group of third side H 3, centripetal It is performed sequentially by a bonding method. That is, the aluminum electrode 2
As shown in FIG. 1A, in the wire bonding method of bonding the internal lead 3 and the internal lead 3 with a wire 5, the order of group → group → group → group → group → group → group → group on each side is as follows. The aluminum electrodes included in each group are sequentially subjected to the centripetal bonding method. According to this joining procedure, as described above, the semiconductor element 1 is intermittently applied with the ultrasonic vibration using the load as the semiconductor element 1, thereby connecting the semiconductor element 1 to the island 4 of the lead frame.
Thus, the effect of reducing the variation in the bonding strength on each side of the semiconductor element 1 due to the temporal decrease in the elastic modulus of the mount member 10 pressed to the semiconductor device 1 is realized.

【００１８】このような接合手順により、アルミ電極２
と内部リード３とのワイヤ５による接合が行われるが、
それぞれのアルミ電極２に対応する具体的な接合方法と
しては、図２に示されるように、ボンディングキャピラ
リ８に対してＦ＝４０ｇｔの荷重を印加することによ
り、ボンディングボール９を押圧し、次いで、ボンディ
ングキャピラリ８に印加する荷重を上記のＦ＝４０ｇｔ
に保持したままの状態において、トランスデューサ６に
装着されているボンディングキャピラリ８に対し、超音
波振動方向７に沿った超音波振動が印加され、半導体素
子１に対する加熱温度２００°Ｃの下において、ボンデ
ィングボール９とアルミ電極２との超音波併用熱圧着接
合が行われる。なお、上記の加熱の方法は、従来例の場
合ど同様であり、アイランド４の下部に設けられている
加熱ステージ（図示されない）により行われる。By such a joining procedure, the aluminum electrode 2
And the internal lead 3 are joined by the wire 5,
As a specific bonding method corresponding to each aluminum electrode 2, as shown in FIG. 2, a load of F = 40 gt is applied to the bonding capillary 8 to press the bonding ball 9, and then, The load applied to the bonding capillary 8 is F = 40 gt.
Is applied to the bonding capillary 8 mounted on the transducer 6 in the ultrasonic vibration direction 7, and the semiconductor element 1 is bonded at a heating temperature of 200 ° C. Ultrasonic combined thermocompression bonding between the ball 9 and the aluminum electrode 2 is performed. The above-mentioned heating method is the same as in the case of the conventional example, and is performed by a heating stage (not shown) provided below the island 4.

【００１９】なお、上記の実施形態においては、半導体
素子の各辺に配置されるアルミ電極を、それぞれ２群に
分割する場合を例として説明を行っているが、本発明
は、これに限定されるものではない。上記の実施形態に
おいては、半導体素子１に対する第１辺Ｈ1 、第２辺Ｈ
2 、第３辺Ｈ3 および第４辺Ｈ4 に対応して、それぞれ
に配置される内部リード３は、それぞれ当該半導体素子
１において、〔第群および第群〕、〔第群および
第群〕、〔第群および第群〕、および〔第群お
よび第群〕に区分されて配置されるアルミ電極２に対
して、それぞれワイヤ５により接続されているが、これ
らの第１辺Ｈ1 、第２辺Ｈ2 、第３辺Ｈ3および第４辺
Ｈ4 に対応して、それぞれに配置されるアルミ電極２の
グループ区分については、周回方向に沿って、それぞれ
〔第（９）群、（１１）群および第（７）群〕、〔第
（１）群、第（５）群および第（３）群〕、〔第（１
０）群、第（１２）および第（８）群〕、および〔第
（２）群、第（６）群および第（４）群〕に区分し、ア
ルミ電極２と内部リード３とをワイヤ５により接合する
ワイヤボンディング方法としては、これらの各群に対す
る向心ボンディングを行う手順として、各辺における
（１）群→（２）群→（３）群→（４）群→（５）群→
（６）群→（７）群→（８）群→（９）群→（１０）群
→（１１）群→（１２）群の順番において、それぞれの
群に含まれるアルミ電極に対し向心ボンディングを行う
ことも可能である。即ち、本発明は、半導体装置のアル
ミ電極のピッチの状態、集積度等によっては、アルミ電
極を２群以上に分割することによっても本発明が有効に
適用される。In the above embodiment, the case where the aluminum electrodes arranged on each side of the semiconductor element are divided into two groups has been described as an example. However, the present invention is not limited to this. Not something. In the above embodiment, the first side H 1 and the second side H
2 , the internal leads 3 respectively disposed corresponding to the third side H 3 and the fourth side H 4 correspond to [the first group and the second group], [the first group and the second group] in the semiconductor element 1. , [the group and the group], and with respect to the aluminum electrode 2 that is arranged to be divided into [the group and the group], have been respectively connected by wire 5, the first side H 1 thereof, the Regarding the group divisions of the aluminum electrodes 2 arranged corresponding to the two sides H 2 , the third side H 3 and the fourth side H 4 , respectively, along the circumferential direction, [(9) group, ( 11) group and (7) group], [(1) group, (5) group and (3) group], [(1
0) group, (12) and (8) groups], and [(2) group, (6) group and (4) group], and the aluminum electrode 2 and the internal lead 3 are wired. As a wire bonding method for bonding by group 5, the procedure of performing centripetal bonding on each of these groups is as follows: (1) group → (2) group → (3) group → (4) group → (5) group →
(6) group → (7) group → (8) group → (9) group → (10) group → (11) group → (12) group in order of aluminum electrode included in each group. Bonding can also be performed. That is, the present invention can be effectively applied to the case where the aluminum electrodes are divided into two or more groups, depending on the state of the pitch of the aluminum electrodes of the semiconductor device, the degree of integration, and the like.

【００２０】[0020]

【発明の効果】以上説明したように、本発明は、半導体
装置の超音波併用熱圧着ワイヤボンディング方法におい
て、４辺が第１辺、第２辺、第３辺および第４辺により
形成される半導体素子に対して、前記各辺に配置される
アルミ電極をそれぞれ第１群および第２群に２分分割
し、超音波振動方向に対して長さ方向が一致する前記第
２辺の第１群、同じく超音波振動方向に対して長さ方向
が一致する前記第４辺の第１群、前記第２辺の第２群、
前記第４辺の第２群、超音波振動方向に対して長さ方向
が直交する前記第１辺の第１群、同じく超音波振動方向
に対して長さ方向が直交する前記第３辺の第１群、前記
第１辺の第２群、前記第３辺の第２群の順番において、
それぞれ向心ボンディングを行うことにより、前記各辺
におけるアルミ電極に対する接合強度が平均化され、ボ
ンディングボールとアルミ電極間の接合強度にバラツキ
が生じることなく安定した接合処理を行うことが可能と
なり、半導体素子の高信頼性を確保することができると
いう効果がある。As described above, according to the present invention, in the method of thermocompression bonding wire bonding using ultrasonic waves for a semiconductor device, four sides are formed by the first side, the second side, the third side and the fourth side. With respect to the semiconductor element, the aluminum electrodes arranged on each side are divided into a first group and a second group, respectively, and the first electrode of the second side whose length direction coincides with the ultrasonic vibration direction is divided. A first group of the fourth side, a second group of the second side, the length direction of which is the same as the ultrasonic vibration direction;
The second group of the fourth side, the first group of the first side whose length direction is orthogonal to the ultrasonic vibration direction, and the third group of the third side whose length direction is orthogonal to the ultrasonic vibration direction In the order of the first group, the second group of the first side, and the second group of the third side,
By performing the centripetal bonding, the bonding strength to the aluminum electrode on each side is averaged, and the bonding strength between the bonding ball and the aluminum electrode can be stably performed without variation. There is an effect that high reliability of the element can be ensured.

【００２１】また、上記の効果に派生して、半導体素子
の高集積化、アルミ電極間のピッチの縮小化および多ピ
ン化等に対して十分対応することが可能となり、今後に
おける半導体装置の高密度・高集積化・小型化等の開発
課題に対して有効に適用することができるという効果が
ある。In addition to the above effects, it is possible to sufficiently cope with high integration of semiconductor elements, reduction in pitch between aluminum electrodes, increase in the number of pins, and the like. There is an effect that it can be effectively applied to development issues such as density, high integration, and miniaturization.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の１実施形態の適用による半導体装置の
平面配置図および部分断面図である。FIG. 1 is a plan layout view and a partial cross-sectional view of a semiconductor device according to an embodiment of the present invention.

【図２】本実施形態の適用によるアルミ電極接合部位の
要部を示す断面図である。FIG. 2 is a cross-sectional view showing a main part of an aluminum electrode joining portion according to the present embodiment.

【図３】従来例の適用による半導体装置の平面配置図で
ある。FIG. 3 is a plan layout view of a semiconductor device according to a conventional example.

【符号の説明】[Explanation of symbols]

１ 半導体素子 ２ アルミ電極 ３ 内部リード ４ アイランド ５ ワイヤ ６ トランスデューサ ７ 超音波振動方向 ８ ボンディングキャピラリ ９ ボンディングボール １０ マウント材 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Aluminum electrode 3 Internal lead 4 Island 5 Wire 6 Transducer 7 Ultrasonic vibration direction 8 Bonding capillary 9 Bonding ball 10 Mounting material

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 半導体装置のアルミ電極を内部リードに
ワイヤ接続する超音波併用熱圧着ボンディング方法にお
いて、 方形の外周が単１方向の周回方向に沿って第１辺、第２
辺、第３辺および第４辺として規定され、ボンディング
時における超音波振動方向に対して方向が直交する辺が
前記第１辺および前記第３辺として規定されて、当該ボ
ンディング時における超音波振動方向に対して方向が一
致する辺が前記第２辺および前記第４辺として規定され
るワイヤボンディング対象の半導体素子に対応して、前
記各辺に配置されるアルミ電極を、それぞれ前記単１方
向の周回方向に沿って第１群および第２群にグルーブ区
分分割する第１のステップと、 前記第２辺の第１群のアルミ電極に対して向心ボンディ
ングを行う第２のステップと、 前記第４辺の第１群のアルミ電極に対して向心ボンディ
ングを行う第３のステップと、 前記第２辺の第２群のアルミ電極に対して向心ボンディ
ングを行う第４のステップと、 前記第４辺の第２群のアルミ電極に対して向心ボンディ
ングを行う第５のステップと、 前記第１辺の第２群のアルミ電極に対して向心ボンディ
ングを行う第６のステップと、 前記第３辺の第２群のアルミ電極に対して向心ボンディ
ングを行う第７のステップと、 前記第１辺の第１群のアルミ電極に対して向心ボンディ
ングを行う第８のステップと、 前記第３辺の第１群のアルミ電極に対して向心ボンディ
ングを行う第９のステップと、 を少なくとも有することを特徴とする半導体装置のワイ
ヤボンディング方法。1. An ultrasonic combined thermo-compression bonding method for connecting an aluminum electrode of a semiconductor device to an internal lead by wire, wherein the outer periphery of the square is formed on a first side and a second side along a circumferential direction of a single direction.
The sides defined as the side, the third side, and the fourth side, and the sides perpendicular to the ultrasonic vibration direction at the time of bonding are defined as the first side and the third side, and the ultrasonic vibration during the bonding is defined. The aluminum electrodes disposed on the respective sides are respectively aligned with the single direction in accordance with the semiconductor element to be wire-bonded whose sides coincident with the direction are defined as the second side and the fourth side. A first step of dividing the groove into a first group and a second group along a circumferential direction of the second group, a second step of performing centripetal bonding on the first group of aluminum electrodes on the second side, A third step of performing centripetal bonding on the first group of aluminum electrodes on the fourth side; a fourth step of performing centripetal bonding on the second group of aluminum electrodes on the second side; A fifth step of performing centripetal bonding on the second group of aluminum electrodes on the fourth side, a sixth step of performing centripetal bonding on the second group of aluminum electrodes on the first side, A seventh step of performing centripetal bonding on the second group of aluminum electrodes on the third side, an eighth step of performing centripetal bonding on the first group of aluminum electrodes on the first side, 9. A ninth step of performing centripetal bonding on the first group of aluminum electrodes on the third side, and a ninth step. 【請求項２】 半導体装置のアルミ電極を内部リードに
ワイヤ接続する超音波併用熱圧着ボンディング方法にお
いて、 方形の外周が単１方向の周回方向に沿って第１辺、第２
辺、第３辺および第４辺として規定され、ボンディング
時における超音波振動方向に対して方向が直交する辺が
前記第１辺および前記第３辺として規定されて、当該ボ
ンディング時における超音波振動方向に対して方向が一
致する辺が前記第２辺および前記第４辺として規定され
るワイヤボンディング対象の半導体素子に対応して、前
記各辺に配置されるアルミ電極を、それぞれ前記単１方
向の周回方向に沿って第１群、第２群および第３群にグ
ルーブ区分分割する第１のステップと、 前記第２辺の第１群のアルミ電極に対して向心ボンディ
ングを行う第２のステップと、 前記第４辺の第１群のアルミ電極に対して向心ボンディ
ングを行う第３のステップと、 前記第２辺の第３群のアルミ電極に対して向心ボンディ
ングを行う第４のステップと、 前記第４辺の第３群のアルミ電極に対して向心ボンディ
ングを行う第５のステップと、 前記第２辺の第２群のアルミ電極に対して向心ボンディ
ングを行う第６のステップと、 前記第４辺の第２群のアルミ電極に対して向心ボンディ
ングを行う第７のステップと、 前記第１辺の第３群のアルミ電極に対して向心ボンディ
ングを行う第８のステップと、 前記第３辺の第３群のアルミ電極に対して向心ボンディ
ングを行う第９のステップと、 前記第１辺の第１群のアルミ電極に対して向心ボンディ
ングを行う第１０のステップと、 前記第３辺の第１群のアルミ電極に対して向心ボンディ
ングを行う第１１のステップと、 前記第１辺の第２群のアルミ電極に対して向心ボンディ
ングを行う第１２のステップと、 前記第３辺の第２群のアルミ電極に対して向心ボンディ
ングを行う第１３のステップと、 を少なくとも有することを特徴とする半導体装置のワイ
ヤボンディング方法。2. An ultrasonic combined thermo-compression bonding method in which an aluminum electrode of a semiconductor device is connected to an internal lead by a wire.
The sides defined as the side, the third side, and the fourth side, and the sides perpendicular to the ultrasonic vibration direction at the time of bonding are defined as the first side and the third side, and the ultrasonic vibration during the bonding is defined. The aluminum electrodes disposed on the respective sides are respectively aligned with the single direction in accordance with the semiconductor element to be wire-bonded whose sides coincident with the direction are defined as the second side and the fourth side. A first step of dividing the groove into a first group, a second group, and a third group along a circumferential direction of the second group; and a second step of performing centripetal bonding on the first group of aluminum electrodes on the second side. A third step of performing centripetal bonding on the first group of aluminum electrodes on the fourth side, and a fourth step of performing centripetal bonding on the third group of aluminum electrodes on the second side. Step A fifth step of performing centripetal bonding on the third group of aluminum electrodes on the fourth side; and a sixth step of performing centripetal bonding on the second group of aluminum electrodes on the second side. A seventh step of performing centripetal bonding on the second group of aluminum electrodes on the fourth side, and an eighth step of performing centripetal bonding on the third group of aluminum electrodes on the first side A ninth step of performing centripetal bonding on the third group of aluminum electrodes on the third side, and a tenth step of performing centripetal bonding on the first group of aluminum electrodes on the first side. An eleventh step of performing centripetal bonding on the first group of aluminum electrodes on the third side, and a twelfth step of performing centripetal bonding on the second group of aluminum electrodes on the first side. And the second group of al on the third side Wire bonding method for a semiconductor device, characterized in that it comprises a thirteenth step of centripetal bonding to the electrode, at least.
JP9141436A 1997-05-30 1997-05-30 Semiconductor device wire bonding method Expired - Fee Related JP2901572B2 (en)

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JP2901572B2 true JP2901572B2 (en) 1999-06-07

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