JP2893373B2 - Thermoelectric element - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric element capable of performing cooling or heat generation by generating power by means of a temperature difference or flowing an electric current.

[0002]

2. Description of the Related Art A thermoelectric element is formed by joining a P-type thermoelectric semiconductor material and an N-type thermoelectric semiconductor material via a metal electrode.
It is manufactured by forming an N junction element pair. This thermoelectric element generates an electromotive force based on the Seebeck effect by giving a temperature difference between the junction pair, and as a power generation device, and by flowing a current to the junction, cooling is performed on one side of the junction and heat is generated on the other side. There is a use as a cooling device or a precision temperature control device utilizing the so-called Peltier effect that occurs.

In general, a thermoelectric element is used as a thermoelectric module in which a plurality of elements are connected in series. The structure of this thermoelectric module is such that P-type and N-type thermoelectric semiconductor materials having a side of several hundred μm to several mm are sandwiched between two electrically insulating substrates such as alumina and aluminum nitride. At the same time as the N-type thermoelectric semiconductor material is joined on a substrate by an electrically conductive substance such as a metal, a plurality of joints are connected in series by two substrates. The performance of a thermoelectric module depends on the materials and thermal design that make it up,
The number of thermoelectric elements forming the module is an important factor. In particular, in power generation using a temperature difference, an electromotive voltage generated is proportional to the number of elements. Therefore, it is desired to increase the number of elements arranged in series in a module for extracting a high voltage. Also, in the case where a thermoelectric module is used as a cooling element or a temperature control element, if the number of elements arranged in direct current is small, the current flowing through the elements increases, so that it is necessary to make the wiring thicker and increase the power supply. Was. For this reason, arranging many elements in series has been desired even when used as a cooling element.

[0004]

However, when a large number of thermoelectric elements are arranged in series, the function as a module is impaired if any one of the wires or the thermoelectric semiconductor material is disconnected. This problem has led to a reduction in the yield in manufacturing, and at the same time has been a major problem in terms of cost.

[0005]

In order to solve the above-mentioned problems, all or all of the wiring such as metal formed on the substrate sandwiching the thermoelectric semiconductor material in order to connect the thermoelectric semiconductor materials in series in the module is provided. In addition to joining a thermoelectric semiconductor material partially, an electrode for connecting to the outside or connecting to another electrode in the module is provided.

[0006]

By providing electrodes on the substrate wiring, if there is a defect such as disconnection in the thermoelectric semiconductor material in the module or the wiring on the substrate during or after assembly of the module, the defective portion is avoided. By electrically connecting the electrodes, the performance as a whole is reduced by the amount of the functionally deleted portion, but the device can be made to function as a module. Further, by using these electrodes as inspection electrodes, it is possible to know the presence and location of a defect such as a disconnection in the module. Further, the electrode of the present invention can be used as an input / output electrode.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described based on embodiments with reference to the drawings. FIG. 1 shows a thermoelectric module manufactured by forming a PN junction between a P-type thermoelectric semiconductor material and an N-type thermoelectric semiconductor material via a metal and sandwiching the same between two alumina substrates. FIG.

In FIG. 1, a solid line portion 1 represents an upper substrate wiring which is a PN junction wiring / electrode provided on the upper substrate, and a broken line 2 represents a PN junction wiring / electrode formed on the lower substrate. The lower substrate wiring is shown. The P-type thermoelectric semiconductor material 3 and the N-type thermoelectric semiconductor material 4 are alternately sandwiched between the circular portions where the solid line and the broken line intersect, and are between two input / output electrodes 5 (hereinafter, between two electrodes). Is referred to as between the electrodes). The electrode 6 is provided on the outer peripheral portion of the wiring on the lower substrate as a module repair and inspection electrode according to the present invention. By providing a plurality of electrodes 6, a probe electrode for inspection is brought into contact between the electrodes 6, so that the electrodes 6 (for example, electrodes 6-a and 6-
The presence of a defect such as a disconnection existing during -b) can be checked. Further, when a defect exists between the electrodes 6, by electrically connecting the electrodes, the defective portion is electrically isolated, and the module can be formed only by the non-defective portion. For example, if there is a disconnection at point A in FIG.
By electrically shorting -a and the electrode 6-b, the module can function as a module.

In FIG. 1, there are several tens of places where the thermoelectric semiconductor material is sandwiched. However, this figure is for the sake of simplicity, and the inventor of the present invention has 50 rows in the X direction of FIG. An experiment was performed on a temperature difference power generation module having 10 rows in the direction. Two rows (10 pairs in number of elements) in the X direction were deleted from the wiring for one disconnection, but the power generation performance was deleted. It was a percentage of numbers. The decrease in performance varies depending on the purpose of use of the module.
In many cases, a decrease in the number of elements of about% does not become a major problem, but in advance, the number of defective elements is estimated,
This can be solved by increasing the number of elements accordingly.
Further, in the case of a module having the wiring structure shown in FIG. 1, a failure such as disconnection occurs due to a wiring structure in which the number of elements in the Y direction in the figure is reduced as much as possible and the number of elements in the X direction is increased. Even when the electrodes 6-a and the electrodes 6-b are connected, the ratio of the number of inactive elements to the total number of elements can be reduced.

[0010]

By forming the electrodes according to the present invention on the wiring on the substrate of the thermoelectric module, the thermoelectric module can be inspected, and defects such as disconnection and poor connection can be examined, and at the same time defects exist. In this case, the function as the thermoelectric module can be exhibited by connecting the electrodes so as to avoid the defective portion. As a result, the production yield of the module can be significantly increased, and the cost can be reduced.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram showing a module of a thermoelectric element of the present invention as seen through from the upper surface of a substrate, and showing only wiring and electrodes on an upper substrate and a lower substrate.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 upper substrate wiring 2 lower substrate wiring 3 P-type thermoelectric semiconductor material 4 N-type thermoelectric conductor material 5 input / output electrode 6 electrode according to the present invention

Claims (1)

(57) [Claims] 1. A semiconductor device comprising: two substrates facing each other; a P-type thermoelectric semiconductor material and an N-type thermoelectric semiconductor material provided between the substrates; and a serial connection of the P-type thermoelectric semiconductor material and the N-type thermoelectric semiconductor material. a plurality of wires provided on the front SL on the substrate to join
A wiring group composed of a pair of wires are integrally formed with and out of the wiring group
A force electrode, a plurality of wires located at the outer periphery of the wire group, and
Are integrally formed and electrically connectable to the outside.
A test electrode, and avoiding a defective portion of the thermoelectric element detected by the test electrode.
Short-circuiting the inspection electrode so that the defective portion
A thermoelectric element characterized by being able to repair a thermoelectric element.