JP2888074B2 - Magnetoresistive element - Google Patents

Magnetoresistive element

Info

Publication number
JP2888074B2
JP2888074B2 JP5009980A JP998093A JP2888074B2 JP 2888074 B2 JP2888074 B2 JP 2888074B2 JP 5009980 A JP5009980 A JP 5009980A JP 998093 A JP998093 A JP 998093A JP 2888074 B2 JP2888074 B2 JP 2888074B2
Authority
JP
Japan
Prior art keywords
meandering
magnetoresistive element
pattern
patterns
meandering patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5009980A
Other languages
Japanese (ja)
Other versions
JPH06224488A (en
Inventor
得夫 丸本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5009980A priority Critical patent/JP2888074B2/en
Publication of JPH06224488A publication Critical patent/JPH06224488A/en
Application granted granted Critical
Publication of JP2888074B2 publication Critical patent/JP2888074B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】この発明は、直線変位検出装置,
回転角度検出装置などに使用する磁気抵抗素子に関する
ものである。
BACKGROUND OF THE INVENTION The present invention relates to a linear displacement detecting device,
The present invention relates to a magnetoresistive element used for a rotation angle detecting device and the like.

【0002】[0002]

【従来の技術】従来の磁気抵抗素子を、例えば図2に示
す4素子の磁気抵抗素子について説明する。図におい
て、1a〜1dは磁気抵抗素子の蛇行パターンであり、
1a,1dの蛇行パターンは同一の感磁方向を有し、1
b,1cの蛇行パターンは蛇行パターン1a,1dに垂
直な感磁方向を有している。このような構成の磁気抵抗
素子の蛇行パターン1a〜1dに、それぞれに対して長
手方向に対して角度をもって磁界を印加すると、その角
度に応じて各蛇行パターン1a〜1dの抵抗値を小さく
することができる。
2. Description of the Related Art A conventional magnetoresistive element, for example, a four-element magnetoresistive element shown in FIG. 2 will be described. In the figure, reference numerals 1a to 1d denote meandering patterns of the magnetoresistive element,
The meandering patterns 1a and 1d have the same magnetic sensing direction and
The meandering patterns b and 1c have a magnetic sensing direction perpendicular to the meandering patterns 1a and 1d. When a magnetic field is applied to each of the meandering patterns 1a to 1d of the magnetoresistive element having such a configuration at an angle with respect to the longitudinal direction, the resistance value of each of the meandering patterns 1a to 1d is reduced according to the angle. Can be.

【0003】図2に示す磁気抵抗素子を用いた磁気式回
転角度検出装置を、図3の回路図により説明する。図に
おいて、1は図2の磁気抵抗素子、2a〜2hはオペア
ンプ、3は抵抗体、4はコンデンサ、5はLTR、6は
マグネット、7はこれら(2〜6)を含めた主回路、8
は主回路7と同様の構成をもつ補助回路である。このよ
うな構成の磁気式回転角度検出装置において、マグネッ
ト6の部分が回転すると、磁気抵抗素子1の位置に印加
される磁界の角度が変化する。蛇行パターン1a,1d
蛇行パターン1b,1cとは互いに垂直でそれらが取
る抵抗値は異なるため、Vs1とVs2,Vs3とVs
4の間に、マグネット6の回転角度に応じた電位差が生
じる。この電位差をオペアンプ2b〜2dによって増幅
し、マグネット6の回転角度として主回路7,補助回路
8よりそれぞれ検出する。
A magnetic rotation angle detecting device using a magnetoresistive element shown in FIG. 2 will be described with reference to a circuit diagram of FIG. In the figure, 1 is the magnetoresistive element of FIG. 2, 2a to 2h are operational amplifiers, 3 is a resistor, 4 is a capacitor, 5 is an LTR, 6 is a magnet, 7 is a main circuit including these (2 to 6), 8
Is an auxiliary circuit having the same configuration as the main circuit 7. In the magnetic rotation angle detecting device having such a configuration, when the portion of the magnet 6 rotates, the angle of the magnetic field applied to the position of the magnetoresistive element 1 changes. Meandering patterns 1a, 1d
And the meandering patterns 1b and 1c are perpendicular to each other and have different resistance values, so that Vs1 and Vs2, Vs3 and Vs
4, a potential difference corresponding to the rotation angle of the magnet 6 is generated. This potential difference is amplified by the operational amplifiers 2b to 2d and detected as the rotation angle of the magnet 6 by the main circuit 7 and the auxiliary circuit 8, respectively.

【0004】[0004]

【発明が解決しようとする課題】従来の磁気抵抗素子は
図2に示すように各蛇行パターン1a〜1dが構成され
ているので、磁気抵抗素子の周囲温度に片寄りのある場
合、離れた位置にある蛇行パターン1a〜1dの間にわ
ずかな温度差を生じる。蛇行パターン(磁気抵抗素子)
1a〜1dは温度特性を持っているために抵抗値に変化
を生じるし、また周囲磁界も均一とは限らず局部的に磁
界方向に差を生じることもあるので、この場合にも磁気
抵抗素子の各蛇行パターン1a〜1dの抵抗値に差を生
じる。そのために図3の検出回路を用いて検出した場
合、各蛇行パターン1a〜1dの間での周囲環境が均一
の状態であれば、主回路7と補助回路8の出力は同様の
ものとなるが、上記のような要因で蛇行パターン1aと
1d,蛇行パターン1bと1cの抵抗値に差が生じる
と、主回路7と補助回路8の出力は異なったものとな
り、このことにより誤検出を生じるという恐れがある。
As shown in FIG. 2, the conventional magnetoresistive element has the meandering patterns 1a to 1d. A slight temperature difference between the meandering patterns 1a to 1d. Meandering pattern (magnetic resistance element)
1a to 1d have a temperature characteristic, which causes a change in the resistance value. Further, the surrounding magnetic field is not always uniform, and there may be a local difference in the direction of the magnetic field. Of the meandering patterns 1a to 1d. Therefore, when detection is performed using the detection circuit of FIG. 3, if the surrounding environment between the meandering patterns 1 a to 1 d is in a uniform state, the outputs of the main circuit 7 and the auxiliary circuit 8 are similar. If the resistances of the meandering patterns 1a and 1d and the meandering patterns 1b and 1c are different due to the above-described factors, the outputs of the main circuit 7 and the auxiliary circuit 8 are different from each other. There is fear.

【0005】この発明は上記のような問題点を解消する
ためになされたもので、少なくとも同一の感磁方向をも
蛇行パターン(磁気抵抗素子)の周囲温度や磁界方向
をほぼ同じのものとすることにより誤検出を防止できる
信頼性の高い磁気抵抗素子を得ることを目的とする。
The present invention has been made to solve the above-mentioned problems, and at least the meandering pattern (magnetic resistance element) having the same magnetic sensing direction has substantially the same ambient temperature and magnetic field direction. Accordingly, it is an object to obtain a highly reliable magnetoresistive element which can prevent erroneous detection.

【0006】[0006]

【課題を解決するための手段】この発明に係る磁気抵抗
素子は、互いに直角の感磁方向を有する二つの素子が左
右対称に蛇行パターンに配置され、この蛇行パターンに
入り組んだ別の蛇行パターンで別の二つの素子が左右対
称に配置されることによって、これらの位置的な差を小
さくしたものである。
According to a magnetoresistive element according to the present invention, two elements having magneto- sensitive directions perpendicular to each other are arranged on the left.
It is arranged in a meandering pattern symmetrically to the right.
Another two elements in left and right pairs in a different intricate meandering pattern
By arranging the positions, these positional differences are reduced.

【0007】[0007]

【作用】この発明においては、同一の感磁方向の入り組
んだ二つの蛇行パターンでは位置的な差が少ないため、
この同一感磁方向の二つの蛇行パターンでは温度,磁
界,歪などの外的要因を均一に受けることができる。
According to the present invention, a convoluted part having the same magnetic sensing direction is provided .
Because there is little positional difference between the two meandering patterns,
In the two meandering patterns having the same magnetic sensing direction, external factors such as temperature, magnetic field, and distortion can be uniformly received.

【0008】[0008]

【実施例】この発明の一実施例を図1について説明す
る。図において、1A〜1Dは磁気抵抗素子の蛇行パタ
ーンであり、1A,1Dの蛇行パターンは同一の感磁方
向をもちかつ互いに入り組んだ構造をし、1B,1Cの
蛇行パターンは蛇行パターン1A,1Dに垂直な感磁方
向をもちかつ互いに入り組んだ構造をしている。
FIG. 1 shows an embodiment of the present invention. In FIG, 1A to 1D are serpentine pattern <br/> over emissions of the magnetoresistive element, 1A, serpentine pattern of 1D is a rice cake and mutually intricate structure with the same magneto-sensitive direction, 1B, 1C of
The meandering pattern has a magnetic sensing direction perpendicular to the meandering patterns 1A and 1D and has a structure that is intricate with each other.

【0009】従来と同様に図3の検出回路で用いた場
合、局所的に温度,磁界,歪などの外環境が異なったと
しても、蛇行パターン1Aと1D,1Bと1Cは基板の
同一区域に形成されているため、抵抗値変化は同レベル
であり、主回路7と補助回路8に同等の出力を得ること
ができる。
When used in the detection circuit of FIG. 3 in the same manner as in the prior art, the meandering patterns 1A and 1D and 1B and 1C are formed on the substrate even if the external environment such as temperature, magnetic field, and distortion are locally different.
Since they are formed in the same area , the resistance value changes are at the same level, and the same output can be obtained in the main circuit 7 and the auxiliary circuit 8.

【0010】[0010]

【発明の効果】以上のように、この発明によれば互いに
直角の感磁方向を有する二つの素子が左右対称に蛇行パ
ターンに配置され、この蛇行パターンに入り組んだ別の
蛇行パターンで別の二つの素子が左右対称に配置される
ように構成したので、局所的な外的要因があってもそれ
ぞれの蛇行パターンの受ける影響を同様のものに保て、
誤検出が防止できるという効果が得られる。
As it is evident from the foregoing description, together according to the present invention
Two elements with a perpendicular magnetic sensing direction
Another turn that is placed on the turn and intertwined with this meandering pattern
Another two elements are arranged symmetrically in a meandering pattern
As a result, even if there are local external factors, the effect of each meandering pattern can be kept the same,
The effect is obtained that erroneous detection can be prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 この発明の一実施例を示す磁気抵抗素子の
行パターン配列の図である。
FIG. 1 shows a snake of a magnetoresistive element showing an embodiment of the present invention.
It is a figure of a row pattern arrangement .

【図2】 従来の磁気抵抗素子の蛇行パターン配列を示
す図である。
FIG. 2 is a diagram showing a meandering pattern arrangement of a conventional magnetoresistive element.

【図3】 図2の磁気抵抗素子を利用した回転角度検出
装置を示す回路図である。
FIG. 3 is a circuit diagram showing a rotation angle detecting device using the magnetoresistive element of FIG. 2;

【符号の説明】[Explanation of symbols]

1A 磁気抵抗素子(蛇行パターン) 1B 磁気抵抗素子(蛇行パターン) 1C 磁気抵抗素子(蛇行パターン) 1D 磁気抵抗素子(蛇行パターン) 2a オペアンプ 2b オペアンプ 2c オペアンプ 2d オペアンプ 2e オペアンプ 2f オペアンプ 2g オペアンプ 2h オペアンプ 3 抵抗体 4 コンデンサ 5 LTR 6 マグネット 7 主回路 8 補助回路1A Magnetoresistance element ( meander pattern) 1B Magnetoresistance element ( meander pattern) 1C Magnetoresistance element ( meander pattern) 1D Magnetoresistance element ( meander pattern) 2a Operational amplifier 2b Operational amplifier 2c Operational amplifier 2d Operational amplifier 2e Operational amplifier 2f Operational amplifier 2g Operational amplifier 2h Operational amplifier 3 Resistance Body 4 Capacitor 5 LTR 6 Magnet 7 Main circuit 8 Auxiliary circuit

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 互いに直角の感磁方向を有する二つの素
子が左右対称に蛇行パターンに配列され、前記蛇行パタ
ーンに入り組んだ別の蛇行パターンで別の素子が左右対
称に配置されていることを特徴とする磁気抵抗素子。
1. Two elements having magneto-sensitive directions perpendicular to each other.
Are arranged symmetrically in a meandering pattern, and the meandering pattern is
Different elements in left and right pairs with different meandering patterns
A magnetoresistive element, wherein the magnetoresistive element is disposed .
JP5009980A 1993-01-25 1993-01-25 Magnetoresistive element Expired - Fee Related JP2888074B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5009980A JP2888074B2 (en) 1993-01-25 1993-01-25 Magnetoresistive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5009980A JP2888074B2 (en) 1993-01-25 1993-01-25 Magnetoresistive element

Publications (2)

Publication Number Publication Date
JPH06224488A JPH06224488A (en) 1994-08-12
JP2888074B2 true JP2888074B2 (en) 1999-05-10

Family

ID=11735053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5009980A Expired - Fee Related JP2888074B2 (en) 1993-01-25 1993-01-25 Magnetoresistive element

Country Status (1)

Country Link
JP (1) JP2888074B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1185723C (en) * 1998-08-07 2005-01-19 旭化成株式会社 Magnetic sensor and method for fabricating same
JP3506078B2 (en) 1999-11-25 2004-03-15 株式会社デンソー Rotation detection device
KR100604294B1 (en) 2001-10-01 2006-07-31 아사히 가세이 마이크로시스템 가부시끼가이샤 Hall device and magnetic sensor
CN100511748C (en) 2002-01-15 2009-07-08 旭化成电子材料元件株式会社 Hall component
WO2007069680A1 (en) 2005-12-16 2007-06-21 Asahi Kasei Emd Corporation Position detector
JP6127271B2 (en) * 2013-09-19 2017-05-17 パナソニックIpマネジメント株式会社 Giant magnetoresistive element

Also Published As

Publication number Publication date
JPH06224488A (en) 1994-08-12

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