JP2876770B2 - Method for producing semiconductor porcelain composition for voltage nonlinear resistor - Google Patents
Method for producing semiconductor porcelain composition for voltage nonlinear resistorInfo
- Publication number
- JP2876770B2 JP2876770B2 JP2277130A JP27713090A JP2876770B2 JP 2876770 B2 JP2876770 B2 JP 2876770B2 JP 2277130 A JP2277130 A JP 2277130A JP 27713090 A JP27713090 A JP 27713090A JP 2876770 B2 JP2876770 B2 JP 2876770B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- nonlinear resistor
- voltage nonlinear
- resistor
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は電圧非直線抵抗体用半導体磁器組成物の製
造方法に関し、特に、炭酸ストロンチウム，炭酸カルシ
ウム，酸化チタンと、Nb,W,Ta,Inおよび希土類元素の中
から選ばれる少なくとも１種類の酸化物とからなる材料
を用いた電圧非直線抵抗体半導体磁器組成物の製造方法
に関する。Description: TECHNICAL FIELD The present invention relates to a method for producing a semiconductor ceramic composition for a voltage non-linear resistor, and particularly relates to strontium carbonate, calcium carbonate, titanium oxide, Nb, W, Ta, The present invention relates to a method for producing a voltage nonlinear resistor semiconductor ceramic composition using a material comprising at least one oxide selected from In and rare earth elements.
（従来技術） 従来、電圧非直線抵抗体用半導体磁器組成物の材料と
して、たとえば、炭酸ストロンチウム，炭酸カルシウ
ム，酸化チタンと、Nb,W,Ta,Inおよび希土類元素の中か
ら選ばれる少なくとも１種類の酸化物とからなる材料が
用いられていた。ここで用いられる炭酸カルシウムとし
ては、公知のソーダ法やガス法などによって得られる平
均粒径５〜10μｍ程度のものが用いられていた。(Prior art) Conventionally, as a material of a semiconductor ceramic composition for a voltage nonlinear resistor, for example, strontium carbonate, calcium carbonate, titanium oxide and at least one selected from Nb, W, Ta, In and rare earth elements A material consisting of an oxide of As the calcium carbonate used here, those having an average particle size of about 5 to 10 μm obtained by a known soda method, gas method or the like have been used.
これらの材料を混合して、加熱，反応させることによ
って電圧非直線抵抗体用半導体磁器組成物が得られてい
た。These materials are mixed, heated and reacted to obtain a semiconductor ceramic composition for a voltage nonlinear resistor.
（発明が解決しようとする課題） しかしながら、このような従来の電圧非直線抵抗体用
半導体磁器組成物を用いた電圧非直線抵抗体では、非直
線係数が小さく、またサージ電流を印加したときのバリ
スタ電圧の変化率および非直線係数の変化率が大きいと
いう問題があった。(Problems to be Solved by the Invention) However, in the voltage nonlinear resistor using such a conventional semiconductor ceramic composition for a voltage nonlinear resistor, the nonlinear coefficient is small, and the voltage nonlinear resistance when a surge current is applied is small. There is a problem that the rate of change of the varistor voltage and the rate of change of the nonlinear coefficient are large.
それゆえに、この発明の主たる目的は、非直線係数が
大きく、かつサージ耐量が大きい電圧非直線抵抗体を得
ることができる。電圧非直線抵抗体用半導体磁器組成物
の製造方法を提供することである。Therefore, a main object of the present invention is to obtain a voltage non-linear resistor having a large non-linear coefficient and a large surge resistance. An object of the present invention is to provide a method for producing a semiconductor ceramic composition for a voltage nonlinear resistor.
（課題を解決するための手段） この発明は、炭酸ストロンチウム，炭酸カルシウム，
酸化チタンと、Nb,W,Ta,Inおよび希土類元素の中から選
ばれる少なくとも１種類の酸化物とからなる材料を用い
た電圧非直線抵抗体用半導体磁器組成物の製造方法であ
って、出発原料である前記炭酸カルシウムの平均粒径を
1.5μｍ以下でかつ比表面積を2m2/g以上とした、電圧非
直線抵抗体用半導体磁器組成物の製造方法である。(Means for Solving the Problems) The present invention provides strontium carbonate, calcium carbonate,
A method for producing a semiconductor ceramic composition for a voltage non-linear resistor using a material comprising titanium oxide and at least one oxide selected from Nb, W, Ta, In and rare earth elements, comprising: The average particle size of the raw material calcium carbonate
This is a method for producing a semiconductor ceramic composition for a voltage non-linear resistor having a specific surface area of 1.5 μm or less and a specific surface area of 2 m 2 / g or more.
（作用） 出発原料の粒径の違いによって、電圧非直線抵抗体用
半導体磁器組成物の電気的特性に違いが生じる。(Operation) The difference in the particle size of the starting material causes a difference in the electrical characteristics of the semiconductor ceramic composition for a voltage non-linear resistor.
（発明の効果） この発明によれば、非直線係数が大きく、かつサージ
耐量が大きい電圧非直線抵抗体を作製可能な電圧非直線
抵抗体用半導体磁器組成物を得ることができる。(Effect of the Invention) According to the present invention, it is possible to obtain a semiconductor ceramic composition for a voltage non-linear resistor capable of producing a voltage non-linear resistor having a large non-linear coefficient and a large surge resistance.
この発明の上述の目的，その他の目的，特徴および利
点は、以下の実施例の詳細な説明から一層明らかとなろ
う。The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of the embodiments.
（実施例） まず、出発原料として、炭酸カルシウム，炭酸ストロ
ンチウム，酸化チタン，酸化エルビウムを準備した。こ
れらの平均粒径としては、炭酸ストロンチウム1.3μm,
酸化チタン1.5μm,酸化エルビウム3.5μｍとし、酸化カ
ルシウムの平均粒径は種々のものを準備した。(Example) First, calcium carbonate, strontium carbonate, titanium oxide, and erbium oxide were prepared as starting materials. The average particle size of these strontium carbonate 1.3μm,
Titanium oxide was 1.5 μm and erbium oxide was 3.5 μm, and various average particle sizes of calcium oxide were prepared.
これらの出発原料を、（Sr0.845Ca0.15Er0.005）TiO3
の割合となるように秤量し、塩化ビニル製のポットミル
に水と樹脂ボールと共に充填した。このポットミルを24
時間運転し、ポットミル内の充填物を十分混合したの
ち、十分に乾燥し乾燥物を得た。この乾燥物を1150℃で
仮焼して、電圧非直線抵抗体用半導体磁器組成物を得
た。These starting materials were converted to (Sr 0.845 Ca 0.15 Er 0.005 ) TiO 3
And filled into a vinyl chloride pot mill together with water and resin balls. 24 for this pot mill
After operating for an hour and thoroughly mixing the filling in the pot mill, the mixture was sufficiently dried to obtain a dried product. The dried product was calcined at 1150 ° C. to obtain a semiconductor ceramic composition for a voltage nonlinear resistor.
得られた電圧非直線抵抗体用半導体磁器組成物に、焼
結助剤としてSiO2を0.05重量％と、酢酸ビニル系樹脂を
５重量％添加して造粒し、造粒粉を得た。得られた造粒
粉を1ton/cm2の圧力で、直径10mm,厚み1.5mmのペレット
状に成形して成形体を得た。The obtained semiconductor ceramic composition for a voltage nonlinear resistor was granulated by adding 0.05% by weight of SiO 2 as a sintering aid and 5% by weight of a vinyl acetate resin to obtain a granulated powder. The obtained granulated powder was molded into a pellet having a diameter of 10 mm and a thickness of 1.5 mm at a pressure of 1 ton / cm 2 to obtain a molded body.
得られた成形体を空気中において1000℃で２時間焼成
したのち、体積比でH2:N2＝1:100の混合ガス雰囲気中に
おいて1450℃で２時間焼成して半導体磁器を得た。得ら
れた半導体磁器に１モル％のNa2Oと0.5モル％のTiO2か
らなる酸化剤を塗布し、1200℃で５時間熱処理を行って
磁器ユニットを得た。この磁器ユニットの対向面に銀電
極を設けて、電圧非直線抵抗体素子を得た。The obtained compact was fired in air at 1000 ° C. for 2 hours, and then fired at 1450 ° C. for 2 hours in a mixed gas atmosphere of H 2 : N 2 = 1: 100 in volume ratio to obtain a semiconductor porcelain. An oxidizing agent composed of 1 mol% of Na 2 O and 0.5 mol% of TiO 2 was applied to the obtained semiconductor porcelain and heat-treated at 1200 ° C. for 5 hours to obtain a porcelain unit. A silver electrode was provided on the facing surface of the porcelain unit to obtain a voltage non-linear resistor element.
そして、この電圧非直線抵抗体素子のバリスタ電圧V
1mA（Ｖ）、非直線係数α、バリスタ電圧の変化率ΔV
1ma（％）、非直線係数の変化率Δα（％）および比表
面積（m2/g）を測定し、別表に示した。この場合、電圧
非直線抵抗体素子に1mAの電流を流してバリスタ電圧V
1mA（Ｖ）を測定し、5000A/cm2のサージ電流を印加して
バリスタ電圧の変化率ΔV1mA（％）と非直線係数の変化
率Δα（％）とを測定した。Then, the varistor voltage V of this voltage nonlinear resistor element
1mA (V), nonlinear coefficient α, change rate of varistor voltage ΔV
1ma (%), the rate of change of the nonlinear coefficient Δα (%), and the specific surface area (m 2 / g) were measured and shown in the separate table. In this case, a current of 1 mA flows through the voltage non-linear resistor element, and the varistor voltage V
1 mA (V) was measured, and a varistor voltage change rate ΔV 1 mA (%) and a non-linear coefficient change rate Δα (%) were measured by applying a surge current of 5000 A / cm 2 .
なお、表中の＊印を付したものはこの発明の範囲外で
ある。Those marked with * in the table are outside the scope of the present invention.
別表からわかるように、この発明の範囲内の製造方法
で作製した材料を用いた電圧非直線抵抗体素子では、50
00A/cm2のサージ電流印加後のサージ耐量に優れ、非直
線係数αが15以上と大きい値が得られる。As can be seen from the attached table, the voltage non-linear resistor element using the material manufactured by the manufacturing method within the scope of the present invention has a resistance of 50%.
It has excellent surge withstand capability after application of a surge current of 00 A / cm 2 , and a large nonlinear coefficient α of 15 or more is obtained.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 坂部 行雄 京都府長岡京市天神２丁目26番10号 株 式会社村田製作所内 (56)参考文献 特開 平２−187002（ＪＰ，Ａ) 特開 昭59−188906（ＪＰ，Ａ) 特開 昭59−188902（ＪＰ，Ａ) 特開 昭59−188904（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01C 7/02 - 7/22 ──────────────────────────────────────────────────続 き Continuation of front page (72) Inventor Yukio Sakabe 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Murata Manufacturing Co., Ltd. (56) References JP-A-2-187002 (JP, A) JP-A Sho 59-188906 (JP, A) JP-A-59-188902 (JP, A) JP-A-59-188904 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) H01C 7/02 -7/22
Claims (1)
化チタンと、Nb,W,Ta,Inおよび希土類元素の中から選ば
れる少なくとも１種類の酸化物とからなる材料を用いた
電圧非直線抵抗体用半導体磁器組成物の製造方法であっ
て、 出発原料である前記炭酸カルシウムの平均粒径を1.5μ
ｍ以下でかつ比表面積を2m2/g以上とした、電圧非直線
抵抗体用半導体磁器組成物の製造方法。1. A semiconductor for a voltage non-linear resistor using a material composed of strontium carbonate, calcium carbonate, titanium oxide and at least one oxide selected from Nb, W, Ta, In and rare earth elements. A method for producing a porcelain composition, wherein the calcium carbonate as a starting material has an average particle size of 1.5 μm.
m and a specific surface area of 2 m 2 / g or more, a method for producing a semiconductor ceramic composition for a voltage nonlinear resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2277130A JP2876770B2 (en) | 1990-10-15 | 1990-10-15 | Method for producing semiconductor porcelain composition for voltage nonlinear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2277130A JP2876770B2 (en) | 1990-10-15 | 1990-10-15 | Method for producing semiconductor porcelain composition for voltage nonlinear resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04151806A JPH04151806A (en) | 1992-05-25 |
| JP2876770B2 true JP2876770B2 (en) | 1999-03-31 |
Family
ID=17579211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2277130A Expired - Lifetime JP2876770B2 (en) | 1990-10-15 | 1990-10-15 | Method for producing semiconductor porcelain composition for voltage nonlinear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2876770B2 (en) |
-
1990
- 1990-10-15 JP JP2277130A patent/JP2876770B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04151806A (en) | 1992-05-25 |
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