JPH04151806A - Manufacture of semiconductor ceramic compound for voltage non-linear resistor - Google Patents
Manufacture of semiconductor ceramic compound for voltage non-linear resistorInfo
- Publication number
- JPH04151806A JPH04151806A JP2277130A JP27713090A JPH04151806A JP H04151806 A JPH04151806 A JP H04151806A JP 2277130 A JP2277130 A JP 2277130A JP 27713090 A JP27713090 A JP 27713090A JP H04151806 A JPH04151806 A JP H04151806A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor ceramic
- voltage
- calcium carbonate
- linear resistor
- voltage non
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000000919 ceramic Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 150000001875 compounds Chemical class 0.000 title abstract 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims abstract description 20
- 229910000019 calcium carbonate Inorganic materials 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 8
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 claims abstract description 6
- 239000007858 starting material Substances 0.000 claims abstract description 6
- 229910000018 strontium carbonate Inorganic materials 0.000 claims abstract description 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 5
- 229910052738 indium Inorganic materials 0.000 claims abstract description 4
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 5
- FOZHTJJTSSSURD-UHFFFAOYSA-J titanium(4+);dicarbonate Chemical compound [Ti+4].[O-]C([O-])=O.[O-]C([O-])=O FOZHTJJTSSSURD-UHFFFAOYSA-J 0.000 abstract 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は電圧非直線抵抗体用半導体磁器組成物の製造
方法に関し、特に、炭酸ストロンチウム炭酸カルシウム
、酸化チタンと、Ｎｂ、Ｗ、Ｔａ、Ｉｎおよび希土類元
素の中から選ばれる少なくとも１種類の酸化物とからな
る材料を用いた電圧非直線抵抗体用半導体磁器組成物の
製造方法に関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a method for producing a semiconductor ceramic composition for a voltage nonlinear resistor, and in particular, it relates to a method for producing a semiconductor ceramic composition for a voltage nonlinear resistor. and at least one kind of oxide selected from rare earth elements.
（従来技術）
従来、電圧非直線抵抗体用半導体磁器組成物の材料とし
て、たとえば、炭酸ストロンチウム、炭酸カルシウム、
酸化チタンと、Ｎｂ、Ｗ、Ｔａ。(Prior Art) Conventionally, as materials for semiconductor ceramic compositions for voltage nonlinear resistors, for example, strontium carbonate, calcium carbonate,
Titanium oxide, Nb, W, Ta.
Ｉｎおよび希土類元素の中から選ばれる少なくとも１種
類の酸化物とからなる材料が用いられていた。ここで用
いられる炭酸カルシウムとしては、公知のソーダ法やガ
ス法などによって得られる平均粒径５〜１０μｍ程度の
ものが用いられていた。A material consisting of In and at least one oxide selected from rare earth elements has been used. The calcium carbonate used here has an average particle size of about 5 to 10 μm obtained by a known soda method or gas method.
これらの材料を混合して、加熱１反応させることによっ
て電圧非直線抵抗体用半導体磁器組成物が得られていた
。A semiconductor ceramic composition for a voltage nonlinear resistor was obtained by mixing these materials and subjecting the mixture to a heating reaction.
（発明が解決しようとする課題）
しかしながら、このような従来の電圧非直線抵抗体用半
導体磁器組成物を用いた電圧非直線抵抗体では、非直線
係数が小さく、またサージ電流を印加したときのバリス
タ電圧の変化□率および非直線係数の変化率が大きいと
いう問題があった。(Problem to be Solved by the Invention) However, in a voltage nonlinear resistor using such a conventional semiconductor ceramic composition for a voltage nonlinear resistor, the nonlinear coefficient is small, and the voltage resistance when a surge current is applied is small. There was a problem that the rate of change in the varistor voltage and the rate of change in the nonlinear coefficient were large.
それゆえに、この発明の主たる目的は、非直線係数が大
きく、かつサージ耐量が大きい電圧非直線抵抗体を得る
ことができる、電圧非直線抵抗体用半導体磁器組成物の
製造方法を提供することである。Therefore, the main object of the present invention is to provide a method for manufacturing a semiconductor ceramic composition for a voltage nonlinear resistor, which can obtain a voltage nonlinear resistor with a large nonlinear coefficient and a large surge resistance. be.
（課題を解決するための手段）
この発明は、炭酸ストロンチウム、炭酸カルシウム、酸
化チタンと、Ｎｂ、Ｗ、Ｔａ、Ｉ ｎおよび希土類元素
の中から選ばれる少な（とも１種類の酸化物とからなる
材料を用いた電圧非直線抵抗体用半導体磁器組成物の製
造方法であって、出発原料である前記炭酸カルシウムの
平均粒径を１゜５μｍ以下でかつ比表面積を２ｒｒｒ／
ｇ以上とした、電圧非直線抵抗体用半導体磁器組成物の
製造方法である。(Means for Solving the Problems) The present invention provides an oxide consisting of strontium carbonate, calcium carbonate, titanium oxide, and one or more oxides selected from Nb, W, Ta, In, and rare earth elements. A method for producing a semiconductor ceramic composition for a voltage nonlinear resistor using a material, wherein the calcium carbonate as a starting material has an average particle size of 1.5 μm or less and a specific surface area of 2 rrr/
This is a method for producing a semiconductor ceramic composition for a voltage nonlinear resistor, which has a voltage of at least 100 g.
（作用）
出発原料の粒径の違いによって、電圧非直線抵抗体用半
導体磁器組成物の電気的特性に違いが生じる。(Function) Differences in the particle size of the starting materials cause differences in the electrical properties of the semiconductor ceramic composition for voltage nonlinear resistors.
（発明の効果）
この発明によれば、非直線係数が大きく、かつサージ耐
量が大きい電圧非直線抵抗体を作製可能な電圧非直線抵
抗体用半導体磁器組成物を得ることができる。(Effects of the Invention) According to the present invention, it is possible to obtain a semiconductor ceramic composition for a voltage nonlinear resistor that can produce a voltage nonlinear resistor having a large nonlinear coefficient and a large surge withstand capacity.
この発明の上述の目的、その他の目的、特徴および利点
は、以下の実施例の詳細な説明から一層明らかとなろう
。The above objects, other objects, features and advantages of the present invention will become more apparent from the detailed description of the following embodiments.
（実施例）
まず、出発原料として、炭酸カルシウム、炭酸ストロン
チウム、酸化チタン、酸化エルビウムを準備した。これ
らの平均粒径としては、炭酸ストロンチウム１，３μｍ
、酸化チタン１．５μｍ。(Example) First, calcium carbonate, strontium carbonate, titanium oxide, and erbium oxide were prepared as starting materials. The average particle size of these is 1.3 μm for strontium carbonate.
, titanium oxide 1.5 μm.
酸化エルビウム３．５μｍとし、酸化カルシウムの平均
粒径は種々のものを準備した。Erbium oxide was used at 3.5 μm, and calcium oxide with various average particle sizes were prepared.
これらの出発原料を、（Ｓｒｏ、１１４５ Ｃａｏ、５
Ｅｒｏ、。。ｓ ） Ｔ ｉ ０３の割合となるように
秤量し、塩化ビニル製のポットミルに水と樹脂ボールと
共に充填した。このポットミルを２４時間運転し、ポッ
トミル内の充填物を十分混合したのち、十分に乾燥し乾
燥物を得た。この乾燥物を１１５０℃で仮焼して、電圧
非直線抵抗体用半導体磁器組成物を得た。These starting materials (Sro, 1145 Cao, 5
Ero. . s) T i 03, and filled into a vinyl chloride pot mill together with water and resin balls. This pot mill was operated for 24 hours, and the contents in the pot mill were thoroughly mixed and then sufficiently dried to obtain a dried product. This dried material was calcined at 1150° C. to obtain a semiconductor ceramic composition for a voltage nonlinear resistor.
得られた電圧非直線抵抗体用半導体磁器組成物に、焼結
助剤としてＳ ｆ Ｏ２を０．０５重量％と、酢酸ビニ
ル系樹脂を５重量％添加して造粒し、造粒粉を得た。得
られた造粒粉を１ｔｏｎ／ｃＴｌの圧力で、直径Ｌｏｗ
ｍ、厚み１．５ｍｍのペレット状に成形して成形体を得
た。To the obtained semiconductor ceramic composition for a voltage non-linear resistor, 0.05% by weight of S f O2 as a sintering aid and 5% by weight of vinyl acetate resin were added and granulated to form a granulated powder. Obtained. The obtained granulated powder was heated to a diameter of Low at a pressure of 1 ton/cTl.
A molded body was obtained by molding into a pellet having a thickness of 1.5 mm and a thickness of 1.5 mm.
得られた成形体を空気中において１０００℃で２時間焼
成したのち、体積比でＨ２：Ｎｚ ＝１ ：１００の混
合ガス雰囲気中において１４５０℃で２時間焼成して半
導体磁器を得た。得られた半導体磁器に１モル％のＮａ
２Ｏと０．５モル％のＴｉＯ２からなる酸化剤を塗布し
、１２００℃で５時間熱処理を行って磁器ユニットを得
た。この磁器ユニットの対向面に銀電極を設けて、電圧
非直線抵抗体素子を得た。The obtained molded body was fired in air at 1000°C for 2 hours, and then fired at 1450°C for 2 hours in a mixed gas atmosphere with a volume ratio of H2:Nz=1:100 to obtain semiconductor porcelain. 1 mol% Na was added to the obtained semiconductor porcelain.
An oxidizing agent consisting of 2O and 0.5 mol% TiO2 was applied, and heat treatment was performed at 1200° C. for 5 hours to obtain a ceramic unit. Silver electrodes were provided on the opposing surfaces of this ceramic unit to obtain a voltage nonlinear resistor element.
そして、この電圧非直線抵抗体素子のバリスタ電圧Ｖｌ
−Ａ （Ｖ） 、非直線係数α、バリスタ電圧の変化
率ΔＶ１．．Ａ （％）、非直線係数の変化率Δα（％
）および比表面積（ｍ／ｇ）を測定し、別表に示した。Then, the varistor voltage Vl of this voltage nonlinear resistor element
−A (V), nonlinear coefficient α, rate of change of varistor voltage ΔV1. ．． A (%), rate of change of nonlinear coefficient Δα (%
) and specific surface area (m/g) were measured and shown in the attached table.
この場合、電圧非直線抵抗体素子に１ｍＡの電流を流し
てバリスタ電圧Ｖｌ−Ａ （Ｖ）を測定し、５０００
Ａ／ｃａのサージ電流を印加してバリスタ電圧の変化
率ΔＶｌｆｆｌＡ （％）と非直線係数の変化率Δα
（％）とを測定した。In this case, the varistor voltage Vl-A (V) is measured by passing a current of 1 mA through the voltage nonlinear resistor element, and the varistor voltage Vl-A (V) is
Applying a surge current of A/ca, change rate of varistor voltage ΔVlfflA (%) and change rate of nonlinear coefficient Δα
(%) was measured.
なお、表中の＊印を付したものはこの発明の範囲外であ
る。Note that items marked with * in the table are outside the scope of this invention.
別表かられかるように、この発明の範囲内の製造方法で
作製した材料を用いた電圧非直線抵抗体素子では、５０
００ Ａ／ｃＪのサージ電流印加後のサージ耐量に優れ
、非直線係数αが１５以上と大きい値が得られる。As can be seen from the attached table, in the voltage nonlinear resistor element using the material produced by the manufacturing method within the scope of the present invention,
It has excellent surge resistance after application of a surge current of 0.00 A/cJ, and a large nonlinear coefficient α of 15 or more can be obtained.
特許出願人 株式会社 村田製作所 代理人 弁理士 岡 １） 全 啓Patent applicant Murata Manufacturing Co., Ltd. Agent: Patent Attorney Oka 1) Zenhiro
Claims (1)
、Ｎｂ、Ｗ、Ｔａ、Ｉｎおよび希土類元素の中から選ば
れる少なくとも１種類の酸化物とからなる材料を用いた
電圧非直線抵抗体用半導体磁器組成物の製造方法であっ
て、 出発原料である前記炭酸カルシウムの平均粒径を１．５
μｍ以下でかつ比表面積を２ｍ＾２／ｇ以上とした、電
圧非直線抵抗体用半導体磁器組成物の製造方法。[Claims] A voltage nonlinear resistor using a material consisting of strontium carbonate, calcium carbonate, titanium oxide, and at least one oxide selected from Nb, W, Ta, In, and rare earth elements. A method for producing a semiconductor ceramic composition, wherein the average particle size of the calcium carbonate as a starting material is 1.5.
A method for producing a semiconductor ceramic composition for a voltage nonlinear resistor having a specific surface area of 2 m^2/g or less and having a specific surface area of 2 m^2/g or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2277130A JP2876770B2 (en) | 1990-10-15 | 1990-10-15 | Method for producing semiconductor porcelain composition for voltage nonlinear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2277130A JP2876770B2 (en) | 1990-10-15 | 1990-10-15 | Method for producing semiconductor porcelain composition for voltage nonlinear resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04151806A true JPH04151806A (en) | 1992-05-25 |
| JP2876770B2 JP2876770B2 (en) | 1999-03-31 |
Family
ID=17579211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2277130A Expired - Lifetime JP2876770B2 (en) | 1990-10-15 | 1990-10-15 | Method for producing semiconductor porcelain composition for voltage nonlinear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2876770B2 (en) |
-
1990
- 1990-10-15 JP JP2277130A patent/JP2876770B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2876770B2 (en) | 1999-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3044968A (en) | Positive temperature coefficient thermistor materials | |
| US2981699A (en) | Positive temperature coefficient thermistor materials | |
| US3291619A (en) | Ceramic products and process of making same | |
| JPH0353501A (en) | Varistor material and manufacture thereof | |
| JPH04151806A (en) | Manufacture of semiconductor ceramic compound for voltage non-linear resistor | |
| US2915407A (en) | Ceramic electrical bodies | |
| JP2689439B2 (en) | Grain boundary insulation type semiconductor porcelain body | |
| JPH07297009A (en) | Positive temperature coefficient thermistor and manufacturing method thereof | |
| JPH0128481B2 (en) | ||
| JPH05258918A (en) | Electrode material for voltage non-linear resistor | |
| JP3624975B2 (en) | PTC thermistor material and manufacturing method thereof | |
| JPH05258919A (en) | Electrode material for voltage non-linear resistor | |
| JPH04338601A (en) | Semiconductor porcelain having positive resistance temperature coefficient and manufacture thereof | |
| JP3286515B2 (en) | Voltage non-linear resistor | |
| JPH02164006A (en) | Zinc oxide type varistor | |
| JPH02177506A (en) | Grain boundary oxidation type voltage dependent nonlinear resistance element | |
| JPH05258917A (en) | Electrode material for voltage non-linear resistor | |
| JPH0722212A (en) | Semiconductor ceramic for voltage nonlinear resistor | |
| JPH04154661A (en) | Semiconductor porcelain and its production | |
| JPH0383846A (en) | Production of varistor | |
| JPH11139870A (en) | Barium titanate-base semiconductor porcelain | |
| JPH05258916A (en) | Electrode material for voltage non-linear resistor | |
| JP2585121B2 (en) | Method of manufacturing voltage-dependent nonlinear resistor | |
| JPS63301409A (en) | Insulated grain boundary type semiconductor ceramic composite | |
| JPH03261658A (en) | Porcelain composition for resistor of non-linear to electric voltage |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090122 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090122 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100122 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110122 Year of fee payment: 12 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110122 Year of fee payment: 12 |