JP2863659B2 - High frequency amplifier - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency amplifier using a microwave switching circuit, and more particularly to switching and synthesizing a microwave by combining a diode or a field-effect transistor as a switching element. It is related to the circuit.

[0002]

2. Description of the Related Art FIG. 4 shows a conventional microwave switching circuit, in which 1 is a first input terminal, 2 is a second input terminal, 3 is a first output terminal, and 4 is a second output terminal. Terminal, 21
a to 21c are coaxial switches, 22 is a distributor, 23a, 2
3b is a non-reflection terminator.

Next, the operation will be described. The mode of operation of the circuit shown in FIG. 4 is the following three. (a) The signal from the input terminal 1 is divided into two and output to the output terminals 3 and 4. The signal from the input terminal 2 is not output to the output terminals 3 or 4. (b) Divide the signal from the input terminal 2 into two and output to the output terminals 3 and 4. The signal from the input terminal 1 is not output to the output terminals 3 or 4. (c) The signal from input terminal 1 is sent to output terminal 3 and input terminal 2
Is output to the output terminal 4.

[0004] The operation mode of (a) is a coaxial switch 21a.
21a can be obtained by setting the connection shown in FIG. Similarly, in the operation mode (b), the coaxial switches 21a to 21c are set to the state shown in FIG. 4 (b), and in the operation mode (c), the coaxial switches 21a to 21c are set to the state shown in FIG. 4 (c). It can be obtained by:

[0005]

As described above, the conventional microwave switching circuit uses the coaxial switches 21a to 21c which have a long life in the number of operations due to the mechanical operation, so that the reliability is inferior and the coaxial type is not used. Since the circuit is configured by connecting the individual microwave components, there have been problems such as an increase in the size of the circuit and a high price.

[0006] The present invention has been made to solve the above problems, and an object thereof is to provide a high frequency amplifying apparatus had use reliable, and compact micro-wave circuit.

[0007]

According to the present invention, there is provided a high-frequency amplifier according to the present invention.
Width unit has two input terminals and two output terminals child, first, second distributor for each 2 distributes the high-frequency signal inputted from the input terminal are respectively connected to said first divider output first, second diode, said second distributor third are respectively connected to the output, the fourth diode, and the first
A bias supply circuit which performs ON / OFF switching control of the to fourth diodes, a point obtained by combining the outputs of the first and third diodes and the first output terminal, said second and fourth A point where the outputs of the diodes are coupled is referred to as a second output terminal, and a circuit is formed on a microwave strip substrate.
Microwave switching circuit and microwave switching circuit
A first high-frequency amplifier connected to a first output terminal of
Connected to a second output terminal of the microwave switching circuit
A phase shifter and a second high frequency connected via the phase shifter
An amplifier and an output of the first and second high-frequency amplifiers
And a power combiner with a fixed or variable combination ratio .

[0008] Further, the above-mentioned structure is obtained by using a field effect transistor instead of a diode.

[0009]

In the high frequency amplifying device according to the present invention , the microwave path is switched by a diode or a field effect transistor , so that each of the two input terminals is connected.
To split the carrier input from one input terminal into two.
Can be combined with two amplifiers, or two
Simultaneous input of carrier waves with different frequencies from the input terminal
After the power is amplified by each of the two amplifiers, the amplified power is
Can be synthesized.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, 1 and 2 are input terminals, 3 and 4 are output terminals, 5a and 5b are distributors, 6a to 6d are diodes,
7a is a connection point for connecting the outputs of the diodes 6a and 6c, 7b is a connection point for connecting the outputs of the diodes 6b and 6d, and 8 is a bias supply circuit for supplying a bias current to the diodes 6a to 6d. This microwave switching circuit is formed on a microwave strip substrate.

The microwave path switching and combining functions shown in FIGS. 4 (a), (b) and (c) correspond to FIGS. 3 (a), (b) and
This is realized by ON / OFF setting of the diodes 6a to 6d shown in FIG. ON / OFF of diodes 6a to 6d
Setting is diode ON / OFF by bias supply circuit 8.
Is performed by supplying a bias current corresponding to.

In this embodiment, since the microwave switching circuit is formed on a microwave strip substrate and a diode is used instead of the coaxial switch, it is possible to prevent the circuit from being enlarged, and to improve the reliability. Get higher.

In the above embodiment, a diode is used for microwave path switching. However, a field effect transistor may be used as a switching element, and the same effect can be obtained.

In the above embodiment, the microwave circuit for switching / synthesizing a microwave path has been described. However, this circuit can be used as an input to a high-frequency amplifier for performing phase synthesis.

FIG. 2 shows a high-frequency amplifier using the microwave switching circuit in the above embodiment. In the figure, 1
0 is a microwave switching circuit shown in FIG. 1, 11 is a power combiner (VRC; Variable Ratio Combiner), 12 is a non-reflection terminator, and 13a and 13b are high frequency amplifiers (HPA; High).
Power Amplifier) and 14 are output terminals.

This device comprises two high-frequency amplifiers 13a, 1
3b is used to double the output. The microwave switching circuit 10 and the VRC 11 shown in FIG.
By using these in combination, it is possible to operate in at least the following three basic modes.

(A) A carrier wave of frequency f ₁ is input from an input terminal 1, divided into two by a microwave switching circuit 10, amplified by high frequency amplifiers 13 a and 13 b, phase-combined by a VRC 11, and output by a terminal 14. Output more. The microwave switching circuit 10 is set to the state shown in FIG.

(B) A carrier wave of frequency f ₂ is inputted from the input terminal 2, divided into two by the microwave switching circuit 10, amplified by the high frequency amplifiers 13 a and 13 b, phase-combined by the VRC 11, and output by the output terminal 14. Output more. Microwave circuit 1
0 is set to the state shown in FIG.

(C) a carrier having a frequency f ₁ from the input terminal 1;
Enter the carrier of frequency f ₂ from the input terminal 2, a carrier f ₁ at the micro-wave circuit 10 high-frequency amplifier 13a,
The carrier f ₂ is connected to the high frequency amplifier 13b, after each amplified by high power amplifier 13a, 13b, and power combining in VRC11, outputs from the output terminal 14. The microwave switching circuit 10 is set to the state shown in FIG.

In the modes (a) and (b), the output terminal 1
The phase shifter 15 is adjusted so that the combined output at 4 becomes maximum.

In the high-frequency amplifier according to the present embodiment, a diode is used as a switch element and a microwave switching circuit formed on a microwave strip substrate is used. Higher things can be obtained

In the above embodiment, a high-frequency amplifier using a microwave switching circuit using a diode as a switching element has been described. However, a microwave switching circuit using a field-effect transistor may be used as a switching element. The same effect can be obtained.

[0023]

As is evident from the foregoing description, according to the high-frequency amplifying device engaging Ru to the present invention performs the microwave path switching in the diode, also since it is configured to micro-wave conversion circuit to the microwave strip substrate, device There is an effect that the size can be reduced and a highly reliable one can be obtained.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a microwave switching circuit according to an embodiment of the present invention.

FIG. 2 is a configuration diagram of a high-frequency amplifier using a microwave switching circuit according to one embodiment of the present invention.

FIG. 3 is an explanatory diagram of the operation of the microwave switching circuit according to one embodiment of the present invention.

FIG. 4 is a configuration diagram of a conventional microwave switching circuit.

[Explanation of symbols]

 1, 2 input terminal 3, 4 output terminal 5a, 5b distributor 6a-6d diode 7a, 7b junction point 8 bias supply circuit 10 microwave switching circuit shown in FIG. 1 11 power combiner 12 non-reflection terminator 13a, 13b Amplifier 14 Output terminal 15 Phase shifter

Continuation of the front page (56) References JP-A-49-40803 (JP, A) JP-A-3-227129 (JP, A) JP-A-55-80926 (JP, A) Founded in 1987 by the Institute of Electronics, Information and Communication Engineers Proceedings of the 70th Anniversary National Convention, [Part 3: PART 3], Lecture No. 756, "Structure and Characteristics of Monolithic Microswitch", Katsuhiko Araki et al., P3-198, March 15, 1987 Date (58) Field surveyed (Int.Cl. ⁶ , DB name) H01P 1/15 H03F 3/68 H04B 1/02-1/04 H04B 1/74

Claims (2)

(57) [Claims] 1. A two input terminals and two output terminals child, first to each second distributing a high-frequency signal inputted from the input terminal, a second distributor, are respectively connected to said first divider output first, second diode, said second distributor third are respectively connected to the output, the fourth diode, and a bias supply circuit which performs oN / OFF switching control of the first to fourth diodes that the a, a point obtained by combining the outputs of the first and third diodes and the first output terminal, the second
And a point obtained by coupling the output of the fourth diode and the second output terminal, and a micro-wave circuit formed by the circuit in the microwave strip substrate, the first output terminal of the micro-wave circuit Connected
A first high-frequency amplifier connected to a second output terminal of the microwave switching circuit;
A phase shifter; a second high-frequency amplifier connected via the phase shifter ; and a combined high-frequency amplifier connected to outputs of the first and second high-frequency amplifiers.
With a fixed or variable power combiner.
High frequency amplifying device. 2. The high-frequency amplifier according to claim 1, wherein field-effect transistors are used for the first to fourth diodes of the microwave switching circuit .