JP2001211090A - High frequency power amplifying circuit and portable telephone terminal using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To generate maximum output power suitable and just enough for every plural operation mode, and suppress consumption power less when the maximum output power is low, and perform stable operation in each operation mode. SOLUTION: In the amplifying circuit and the telephone terminal, a signal input terminal 1 is connected to an input terminal of input matching circuits 11, 12 and those output terminals of the circuits 11, 12 are connected respectively to input terminals of high frequency power amplifiers 2, 3. An output terminal of the amplifier 2 is connected to one terminal of a semiconductor switch 4 through output matching circuits 7, 9 and a semiconductor switch 5 selecting the circuit 7 or 9. An output terminal of the amplifier 3 is connected to another terminal of the switch 4 through output matching circuits 8, 10 and a semiconductor switch 6 selecting the circuit 8 or 10, and one terminal of the switch 4 is connected to a signal output terminal 13.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency power amplifier circuit using a semiconductor element or a semiconductor integrated circuit and a portable telephone terminal using the same.

[0002]

2. Description of the Related Art FIG. 4 is a schematic diagram showing a communication system of a satellite portable telephone service which is one of new mobile communication systems. The communication system of this satellite mobile phone service is composed of a satellite 51 and mobile phone terminals 52 and 53, for example, as shown in FIG.

[0003] In the communication system of this satellite mobile phone service,
Communication between the mobile phone terminal 52 and the mobile phone terminal 53 is performed via the satellite 51. At this time, it is necessary to exchange high-output power (about 5 W) between the mobile phone terminal 52 and the satellite 51, for example. Other mobile communication systems,
For example, the transmission power of the PDC method is about 1 W, but the transmission power is about 5 times that of the PDC method.
It is important how to configure the 53 output power amplifier circuits, that is, the high frequency power amplifier circuits.

FIG. 5 is a block diagram showing a schematic configuration of a radio unit in a portable telephone terminal. In FIG. 5, a radio unit 35 receives a voice signal from a voice signal input terminal 42 and generates a transmission signal to a satellite, and receives a transmission signal from a satellite and outputs it from a radio signal output terminal 43. And a receiving unit 37. The transmitter 36 includes an intermediate frequency unit 38 that performs mixing for modulation and frequency conversion of an audio signal, and a high frequency signal that amplifies a high frequency signal output from the intermediate frequency unit 38 and supplies the amplified signal to the antenna 40 via the duplexer 39. And a power amplifying unit 41.

Here, in the high-frequency power amplifier 41,
The high-frequency signal output from the intermediate frequency section 38 is input to the signal input terminal 25 and amplified by the high-frequency power amplifier 41, and the amplified high-frequency signal is output from the signal output terminal 26.

Conventionally, in order to supply high output power to the antenna 40, in the high frequency power amplifier 41, a plurality of built-in high frequency power amplifiers are connected in multiple stages to increase the amplification factor, or a plurality of amplified high frequency power amplifiers are connected. High output power has been obtained by combining the amplified signals with a power combining circuit.

FIG. 7 shows a Wilkinson-type parallel power combining circuit as a high-frequency power amplifying circuit used as a conventional high-frequency power amplifying section 41. This Wilkinson-type parallel power combining circuit, as shown in FIG.
λ / 4 lines 27, 28, 29, 30 and absorption resistors 31,
32 and high frequency power amplifiers 33 and 34.

Here, the λ / 4 lines 27, 28, 29, 3
0 is used to obtain a phase rotation of π / 2,
From the output terminal A of the high-frequency power amplifier 33 to the λ / 4 line 28,
30 so that the difference between the phase of the power reaching the output terminal B of the high-frequency power amplifier 34 after passing through 30 and the phase of the power reaching the output terminal B from the output terminal A through the absorption resistor 32 becomes π. Is set.

A feature of this Wilkinson-type parallel power combining circuit is that the output power can be doubled while securing the isolation between the output terminal A of the high-frequency power amplifier 33 and the output terminal B of the high-frequency power amplifier 34.

[0010]

FIG. 8 shows the input / output characteristics of the high frequency power amplifier circuit having the above-mentioned conventional configuration. FIG.
3 shows a change in the output power Pout with respect to the input power Pin to the high-frequency power amplifier circuit and a change in the operating current Idd with respect to the input power Pin.

As can be seen from FIG. 8, as the supply of input power Pin to the high-frequency power amplifier increases, the output power Po increases.
Although ut increases, the operating current Idd, that is, the consumed current also increases. Therefore, in a mobile phone terminal to which DC power is supplied by a battery, how to suppress the operating current is important for securing a long use time.

As described above, in order to secure a long use time, it is necessary to suppress the output power of the high-frequency power amplifier circuit to a minimum necessary capacity and to suppress the operation current. However, one of the satellite mobile phone systems, ICO
(Intermediate Circular Orbit) (Modulation method: GMS
K modulation), the saturation output power P
Although a sat-level output power (about 36 dBm) is required, a mobile phone terminal used with an output power (about 33 dBm) that is several dB lower than that at the time of voice signal transmission during data transmission such as personal computer communication requires data transmission. During transmission, the output power is over-spec.

Therefore, compared to the case where the output power at the time of data transmission (about 33 dBm) is originally designed as a specification, the amplification factors of the individual high-frequency power amplifiers 33 and 34 constituting the high-frequency power amplifier circuit are more than necessary. Capacity, and accordingly the operating current Idd increases, so that the battery consumption increases and there is a problem in securing a longer use time.

If the output power during data transmission is low, power combining is not performed and one of the high-frequency power amplifiers 33
Is cut off from the signal output terminal 26 and high-frequency power amplification is performed only by the high-frequency power amplifier 34, a mere disconnection causes a misalignment, and not only can not obtain a required output power, but also a problem such as deterioration of efficiency. This causes a problem that stable operation cannot be performed.

[0015] An object of the present invention is to provide, for each of a plurality of operation modes,
A high-frequency power amplifier circuit that can obtain a maximum output power corresponding to the maximum output power, can suppress an operation current in an operation mode having a small maximum output power, and can perform a stable operation in each operation mode. It is to provide.

Another object of the present invention is to obtain, for each of a plurality of operation modes, a maximum transmission output power corresponding to each of a plurality of operation modes, and to suppress an operation current in an operation mode having a small maximum transmission output power. It is an object of the present invention to provide a mobile phone terminal capable of ensuring stable operation in each operation mode.

[0017]

To achieve the above object, a high frequency power amplifier circuit according to the present invention comprises a plurality of power amplifiers to which a signal applied to a signal input terminal is commonly input, and a plurality of power amplifiers. A power switching switch for switching the number of power amplifiers whose output terminals are connected to the signal output terminals in accordance with the plurality of operation modes, respectively, and provided in correspondence with the plurality of power amplifiers; A plurality of matching circuit groups for respectively matching the output impedances of the plurality of power amplifiers; and selectively selecting one of the plurality of matching circuit groups for each of the plurality of matching circuit groups corresponding to the plurality of operation modes. A plurality of matching circuit switching switches connected to the output terminal of each power amplifier.

According to this configuration, the power connected to the signal output terminal corresponding to the output power required in each operation mode is obtained by switching the power switching switch corresponding to each of the plurality of operation modes. The number of amplifiers (single operation or synthesis operation) can be switched. As a result, for each of the plurality of operation modes, it is possible to obtain the maximum output power corresponding to the plurality of operation modes, and to reduce the operation current in the operation mode in which the maximum output power is small, thereby reducing the power consumption. Can be. Moreover, by using a plurality of matching circuit switching switches,
Any one of the matching circuits is selectively connected to the output terminal of each power amplifier for each of the plurality of matching circuit groups corresponding to the plurality of operation modes (single operation or combination operation), respectively.
In each operation mode, stable operation without power loss and abnormal oscillation can be performed.

In the above, the power amplifier is formed on, for example, a gallium arsenide substrate or a silicon substrate. The matching circuit is composed of, for example, a capacitance component and an inductive component.

Further, the portable telephone terminal of the present invention has a high-frequency power amplifier circuit for transmission output. The high-frequency power amplifier circuit includes a plurality of power amplifiers to which a signal applied to a signal input terminal is commonly input. A power switching switch for switching the number of power amplifiers whose output terminals are connected to the signal output terminal among the plurality of power amplifiers in accordance with the plurality of operation modes, respectively, and provided in correspondence with the plurality of power amplifiers, A plurality of matching circuit groups for matching the output impedances of the plurality of power amplifiers corresponding to the plurality of operation modes, and any one of the plurality of matching circuit groups corresponding to the plurality of operation modes; A plurality of matching circuit switching switches for selectively connecting the circuit to the output terminal of each power amplifier.

According to this configuration, the power amplifier connected to the signal output terminal corresponding to the output power required in each operation mode by switching the power switching switch corresponding to each of the plurality of operation modes. (Single operation or synthesis operation) can be switched. As a result, for each of the plurality of operation modes, it is possible to obtain the maximum transmission output power corresponding to the plurality of operation modes, and to suppress the operation current in the operation mode in which the maximum transmission output power is small, thereby reducing the power consumption. It can be suppressed, and as a result, the battery usage time can be prolonged. In addition, a plurality of matching circuit switching switches selectively select one of the matching circuits for each of the plurality of matching circuit groups corresponding to a plurality of operation modes (single operation or combined operation). Since it is connected to the output terminal, stable operation without power loss and abnormal oscillation can be performed in each operation mode.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a high-frequency power amplifier circuit according to a first embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a block diagram showing a high-frequency power amplifier circuit according to a first embodiment of the present invention. As shown in FIG. 1, this high-frequency power amplifier circuit has a signal input terminal 1
Are connected to the input terminal of the input matching circuit 11 and the input terminal of the input matching circuit 12, respectively. An output terminal of the input matching circuit 11 is connected to an input terminal of the high-frequency power amplifier 2, and an output terminal of the input matching circuit 12 is connected to an input terminal of the high-frequency power amplifier 3.

The common terminal of the semiconductor switch 5 is connected to the output terminal of the high-frequency power amplifier 2, and one end of each of the output matching circuits 7 and 9 is connected to each of the selection terminals of the semiconductor switch 5. , 9 are connected to one end of the semiconductor switch 4.

The common terminal of the semiconductor switch 6 is connected to the output terminal of the high-frequency power amplifier 3, and one end of each of the output matching circuits 8 and 10 is connected to each of the selection terminals of the semiconductor switch 6. , 10 are connected to the other end of the semiconductor switch 4.

The semiconductor switch 4 switches between conduction and open between the output terminals of the high-frequency power amplifiers 2 and 3, and the terminal connected to the output terminal of the high-frequency power amplifier 2 is directly connected to the signal output terminal 13. It is connected. That is,
The high-frequency power amplifier 2 is connected to the signal output terminal 13 both when the semiconductor switch 4 is turned on and when the semiconductor switch 4 is turned off. The high-frequency power amplifier 3 is connected to the signal output terminal 13 only when the semiconductor switch 4 is turned on.

Then, the semiconductor switch 4 becomes conductive, and both output terminals of the high-frequency power amplifiers 2 and 3 become signal output terminals 13.
(First operation mode), an output matching circuit 7 is selectively connected to the output terminal of the high-frequency power amplifier 2 by the semiconductor switch 5, and the high-frequency power amplifier 3
An output matching circuit 8 is selectively connected to an output terminal of the semiconductor device 6 by a semiconductor switch 6.

When the semiconductor switch 4 is open and only the output terminal of the high-frequency power amplifier 2 is connected to the signal output terminal 13 (second operation mode), the output terminal of the high-frequency power amplifier 2 The output matching circuit 9 is selectively connected by the switch 5, and the output matching circuit 10 is selectively connected to the output terminal of the high-frequency power amplifier 3 by the semiconductor switch 6.

In the circuit configuration of this embodiment, since the single operation and the combining operation of the high-frequency power amplifier are properly used, it is necessary to adjust each mode. At the time of combining, the matching circuit can be realized by using a λ / 4 line and an absorption resistor as in the related art, but a matching circuit capable of obtaining the same effect is constituted by a capacitive component and an inductive component.

According to this configuration, when outputting the Psat level at the time of transmitting the audio signal (first operation mode),
When the semiconductor switch 4 is turned on, the high-frequency power amplifiers 2 and 3 are turned on.
Are used to combine the output powers. At this time, the high frequency power amplifier 2 is connected to the output matching circuit 7 by the semiconductor switch 5.
The high-frequency power amplifier 3 is connected to an output matching circuit 8 by a semiconductor switch 6, and impedance matching between the output combining terminals of the high-frequency power amplifiers 2 and 3 and the signal output terminal 13 is achieved. Stable high-frequency power amplification without the like is performed.

At the time of data transmission (second operation mode)
In (2), the high-frequency power amplifier 3 is separated from the high-frequency power amplifier 2 by the semiconductor switch 4 in order to use the output power several dB lower than the Psat level. At this time, the supply of the operating current to the high-frequency power amplifier 3 that does not contribute to the power amplification is also cut off, and the power consumption of the entire high-frequency power amplifier circuit is reduced. The supply of the operating current is interrupted by setting the power supply for supplying the operating current to the high-frequency power amplifier 3 to the ground potential or cutting it off.

As a result, the power input from the signal input terminal 1 is amplified via only the high frequency power amplifier 2 and output from the signal output terminal 13. At this time, the high-frequency power amplifier 2 is connected to the output matching circuit 9 by the semiconductor switch 5, and impedance matching between the high-frequency power amplifier 2 and the signal output terminal 13 is achieved.

At the same time, the high-frequency power amplifier 3 is connected to the output matching circuit 10 by the semiconductor switch 6 and is separated from the high-frequency power amplifier 3 by the semiconductor switch 4, that is, the terminal of the semiconductor switch 4.
Impedance matching between the terminal connected to the high-frequency power amplifier 3 and the high-frequency power amplifier 3 is performed. Thus, stable high-frequency power amplification without power loss or abnormal oscillation is performed.

Here, the meaning of impedance matching between the high-frequency power amplifier 3 and the output terminal separated by the semiconductor switch 4 will be described. The wiring connecting the high-frequency power amplifier 3 and the above-described terminal of the semiconductor switch 4 has to take into account an inductive component and a capacitive component in a high-frequency frequency range. Therefore, if the matching between the high-frequency power amplifier 3 and the above-described terminal of the semiconductor switch 4 is not achieved after the disconnection, the matching circuit at the input section of the high-frequency power amplifier 3 may be affected, and furthermore, the operation may be affected. This is because there is a possibility that some influence may be exerted on the high-frequency power amplifier 2 that is operating.

In the high-frequency operation, the one of the output matching circuits 7 and 9 that is not connected and the other of the output matching circuits 8 and 10 that are not connected are connected to the high-frequency power amplifiers 2 and 3. Since it is considered that the impedance matching may be affected, it is preferable to set the circuit constants of the output matching circuits 7 to 10 in consideration of this point.

As described above, according to the high-frequency power amplifier circuit of this embodiment, by switching the semiconductor switch 4 corresponding to each of a plurality of operation modes, the output power required in each operation mode can be handled. Thus, the number (single operation or combination operation) of the power amplifiers 2 and 3 connected to the signal output terminal 13 can be switched. As a result, for each of the plurality of operation modes, it is possible to obtain the maximum output power corresponding to the plurality of operation modes, and to reduce the operation current in the operation mode in which the maximum output power is small, thereby reducing the power consumption. Can be.

In addition, a plurality of operation modes (single operation or combined operation) are performed by the plurality of semiconductor switches 5 and 6.
, A plurality of matching circuit groups 7, 9, 8, 10
One of the appropriate matching circuits is selectively connected to the output terminal of each of the power amplifiers 2 and 3 for each group, so that stable operation without power loss and abnormal oscillation can be performed in each operation mode. Can be.

Now, if the output power at the time of transmitting the audio signal is 3
When the output power at the time of data transmission is 33 dBm at 6 dBm, the conventional configuration performs a circuit design capable of securing the output power of 36 dBm. The operating current is increased as compared with the case where it is originally designed to be 33 dBm.

However, if the configuration of the present embodiment is used and a circuit configuration capable of securing 33 dBm at the time of data transmission is used, the output power does not become over-specified, the operating current can be reduced, and battery consumption can be suppressed.

FIG. 2 is a graph showing input / output characteristics in the case where the high-frequency power amplifying section 41 employs this configuration and has a circuit configuration capable of securing 33 dBm during data transmission. 33dB
The operating current at the time of m output is about 1350 mA, and about 20% (about 300 mA) is reduced compared to about 1650 mA in the conventional configuration of FIG. It can contribute to longer time. That is, when the configuration of the embodiment of the present invention is used, the configuration of the high-frequency amplifier can be selected according to the level of the output power, so that a low operating current can always be realized.

Here, even when the number of high-frequency power amplifiers is larger than that in the first embodiment, it goes without saying that the same effect can be obtained by combining and connecting based on the basic configuration. No.

A portable telephone terminal having the high-frequency power amplifier circuit of the first embodiment as a high-frequency power amplifier circuit for transmission output can switch each of the semiconductor switches 4 corresponding to a plurality of operation modes. The signal output terminal 13 corresponds to the output power required in the operation mode.
Can be switched between the power amplifiers 2 and 3 (single operation or combined operation). As a result, for each of the plurality of operation modes, it is possible to obtain the maximum transmission output power corresponding to the plurality of operation modes, and to suppress the operation current in the operation mode in which the maximum transmission output power is small, thereby reducing the power consumption. Can be suppressed,
As a result, the battery usage time can be extended. Moreover, the plurality of semiconductor switches 5, 6
Any one of a plurality of matching circuit groups 7, 8; 9, 10 corresponding to a plurality of operation modes (single operation or combined operation) is selectively output from each of the power amplifiers 2, 3. Since it is connected to the end, stable operation without power loss and abnormal oscillation can be performed in each operation mode.

[Second Embodiment] FIG. 3 is a block diagram of a high-frequency power amplifier circuit when a higher number of high-frequency power amplifiers are combined and connected than in the first embodiment based on the above basic configuration. Show. In this high-frequency power amplifier circuit, as shown in FIG.
2, 63 and 64 are respectively connected to the input terminals.

The output terminal of the input matching circuit 61 is connected to the input terminal of the high-frequency power amplifier 65, the output terminal of the input matching circuit 62 is connected to the input terminal of the high-frequency power amplifier 66, and the output terminal of the input matching circuit 63. Is connected to the input terminal of the high-frequency power amplifier 67, and the output terminal of the input matching circuit 64 is connected to the input terminal of the high-frequency power amplifier 68.

A common terminal of a semiconductor switch 69 is connected to the output terminal of the high-frequency power amplifier 65, and output matching circuits 73, 77, and 8 are connected to select terminals of the semiconductor switch 69.
1 and 85 are connected to the output matching circuit 7 respectively.
The other ends of 3, 77, 81, and 85 are connected to one end of a semiconductor switch 89.

The common terminal of the semiconductor switch 70 is connected to the output terminal of the high-frequency power amplifier 66, and the output matching circuits 74, 78, and 8 are connected to the respective selection terminals of the semiconductor switch 70.
2 and 86 are connected to the output matching circuit 7 respectively.
The other ends of 4, 78, 82, and 86 are connected to the other end of the semiconductor switch 89.

The common terminal of the semiconductor switch 71 is connected to the output terminal of the high-frequency power amplifier 67, and the output matching circuits 75, 79, and 8 are connected to the respective selection terminals of the semiconductor switch 71.
3, 87 are connected to one end, respectively, and the output matching circuit 7
The other end of each of 5, 79, 83, 87 is connected to one end of the semiconductor switch 90.

The common terminal of the semiconductor switch 72 is connected to the output terminal of the high-frequency power amplifier 68, and the output matching circuits 76, 80, and 8 are connected to the selection terminals of the semiconductor switch 72, respectively.
4 and 88 are connected to the output matching circuit 7 respectively.
The other ends of 6, 80, 84, and 88 are connected to the other end of the semiconductor switch 90.

The semiconductor switch 89 switches between conduction and open between the output terminals of the high frequency power amplifiers 65 and 66, and the terminal connected to the output terminal of the high frequency power amplifier 65 is directly connected to the signal output terminal 91. It is connected. That is, the high-frequency power amplifier 65 is connected to the signal output terminal 91 both when the semiconductor switch 89 is turned on and when the semiconductor switch 89 is turned off, and the high-frequency power amplifier 66 is connected to the signal output terminal 91 only when the semiconductor switch 89 is turned on.

The semiconductor switch 90 switches between conduction and open between the output terminals of the high-frequency power amplifiers 67 and 68. The terminal connected to the output terminal of the high-frequency power amplifier 67 is a signal output terminal 91. Directly connected to That is, the high-frequency power amplifier 67 is connected to the signal output terminal 91 both when the semiconductor switch 90 is turned on and when the semiconductor switch 90 is turned off.
Is connected to the signal output terminal 91 only when the conduction of.

Then, the semiconductor switch 89 is turned on to connect both output terminals of the high-frequency power amplifiers 65 and 66 to the signal output terminal 91, and the semiconductor switch 90 is also turned on to output the output terminals of the high-frequency power amplifiers 67 and 68. Are both connected to the signal output terminal 91 (first operation mode)
Then, an output matching circuit 73 is connected to an output terminal of the high-frequency power amplifier 65 by a semiconductor switch 69, and an output matching circuit 74 is connected to an output terminal of the high-frequency power amplifier 66 by a semiconductor switch 70.
7 is connected to an output matching circuit 75 by a semiconductor switch 71, and an output terminal of the high-frequency power amplifier 68 is connected to an output matching circuit 76 by a semiconductor switch 72.

Next, the semiconductor switch 89 is turned on and both output terminals of the high-frequency power amplifiers 65 and 66 are connected to the signal output terminal 91.
Is open, and the output terminal of the high-frequency power amplifier 67 is connected to the signal output terminal 91 but the high-frequency power amplifier 68 is shut off (second operation mode). Is connected to an output matching circuit 77 by a semiconductor switch 69, an output terminal of the high-frequency power amplifier 66 is connected to an output matching circuit 78 by a semiconductor switch 70, and an output terminal of the high-frequency power amplifier 67 is output by a semiconductor switch 71. A matching circuit 79 is connected, and an output terminal of the high-frequency power amplifier 68 is connected to an output matching circuit 80 by a semiconductor switch 72.

Further, the semiconductor switch 89 is opened, the output terminal of the high-frequency power amplifier 65 is connected to the signal output terminal 91 and the high-frequency power amplifier 66 is cut off, and the semiconductor switch 90 is turned on and the high-frequency power amplifier is turned on. 6
In a state where both output terminals 7 and 68 are connected to the signal output terminal 91 (third operation mode), an output matching circuit 81 is connected to the output terminal of the high-frequency power amplifier 65 by the semiconductor switch 69 and An output matching circuit 82 is connected to the output terminal of the power amplifier 66 by a semiconductor switch 70, an output matching circuit 83 is connected to the output terminal of the high-frequency power amplifier 67 by a semiconductor switch 71, and the output terminal of the high-frequency power amplifier 68 is The output matching circuit 84 is connected by the semiconductor switch 72.

Further, the semiconductor switch 89 is opened, the output terminal of the high-frequency power amplifier 65 is connected to the signal output terminal 91, the high-frequency power amplifier 66 is shut off, and the semiconductor switch 90 is also opened, and the high-frequency power amplifier is opened. 6
7 is connected to the signal output terminal 91 and the high-frequency power amplifier 68 is shut off (fourth operation mode), the output terminal of the high-frequency power amplifier 65 is connected to the output matching circuit 85 by the semiconductor switch 69. An output matching circuit 86 is connected to an output terminal of the high-frequency power amplifier 66 by a semiconductor switch 70, and an output matching circuit 87 is connected to an output terminal of the high-frequency power amplifier 67 by a semiconductor switch 71. An output matching circuit 88 is connected to the end by a semiconductor switch 72.

By using this configuration, when a single portable telephone terminal handles a plurality of types of transmission power at the time of transmitting a voice signal or a data signal, a circuit configuration capable of obtaining a required level of transmission power. And can reduce the operating current when the required level is low, which can contribute to prolonging the use time of the mobile phone terminal and perform stable high-frequency power amplification without power loss or abnormal oscillation. be able to.

As described above, according to the high-frequency power amplifier circuit of the embodiment of the present invention, the same effects as in the first embodiment can be obtained.

The portable telephone terminal having the high-frequency power amplifier circuit of the second embodiment for transmitting and outputting the high-frequency power amplifier circuit by switching the semiconductor switches 89 and 90 corresponding to a plurality of operation modes, respectively. The number of power amplifiers connected to the signal output terminal 91 (single operation or combination operation) can be switched according to the output power required in each operation mode. As a result, for each of the plurality of operation modes, it is possible to obtain the maximum transmission output power corresponding to the plurality of operation modes, and to suppress the operation current in the operation mode in which the maximum transmission output power is small, thereby reducing the power consumption. Thus, the battery life can be prolonged. Moreover, a plurality of matching circuit groups 73, 77, 81, and a plurality of semiconductor switches 69 to 72 correspond to a plurality of operation modes (single operation or combined operation), respectively.
85; 74, 78, 82, 86; 75, 79, 83, 8
7: Any one of the matching circuits is selectively connected to the output terminal of each of the power amplifiers 65 to 68 for each group of 76, 80, 84, and 88, so that there is no power loss or abnormal oscillation in each operation mode. Operation can be performed.

Each high frequency power amplifier in each of the above embodiments is formed on a gallium arsenide substrate or a silicon substrate.

When the high-frequency power amplifier is formed on a gallium arsenide substrate, the speed of electron movement is high, and
Since it is superior in the high frequency band of z or more and has good drain efficiency, the power amplifier used for the mobile phone terminal has an effect of reducing power consumption. Further, when the high-frequency power amplifier is formed on a silicon substrate, the material cost is low, which is advantageous for configuring a power amplifier in a communication system of less than 1 GHz, and the effect of reducing the product cost can be obtained. Can be

Further, the output matching circuit in each of the above embodiments is composed of, for example, a capacitive component and an inductive component as shown in FIG. The same applies to the input matching circuit.

[0061]

As described above, according to the high-frequency power amplifier circuit of the present invention, a circuit configuration according to the required output power level, which cannot be realized by the conventional configuration, can be selectively configured, and the maximum output power can be increased. Operating current in an operation mode with a small value (approximately 80% of the conventional case at an output power of 3 dB down), and stable high-frequency characteristics free from abnormal oscillation due to mismatch can be maintained.

Further, according to the portable telephone terminal of the present invention, in the high-frequency power amplifier circuit, a circuit configuration corresponding to a required output power level, which cannot be realized by the conventional configuration, can be selectively configured. Operating current in an operation mode with a small value (approximately 80% of the conventional case at an output power of 3 dB down), and stable high-frequency characteristics free from abnormal oscillation due to mismatch can be maintained.

In the future, it is effective to satisfy both of high output and low current for realizing a high frequency power amplifying part for a satellite portable telephone or the like which requires higher output power than ever before.

Further, other communication systems (TDMA, CDMA
And the like), the current can be reduced even when the transmission power differs by about 2 to 5 dB when transmitting a signal such as a voice signal or a data signal, which is effective.

[Brief description of the drawings]

FIG. 1 is a block diagram illustrating a configuration of a high-frequency power amplifier circuit according to a first embodiment of the present invention.

FIG. 2 is an input / output characteristic diagram of the high-frequency power amplifier circuit according to the first embodiment of the present invention.

FIG. 3 is a block diagram illustrating a configuration of a high-frequency power amplifier circuit according to a second embodiment of the present invention.

FIG. 4 is a schematic diagram showing a communication system between a mobile phone terminal and a satellite.

FIG. 5 is a schematic diagram showing a configuration of a wireless unit in the mobile phone terminal.

FIG. 6 is a circuit diagram showing a specific example of an output matching circuit and an input matching circuit.

FIG. 7 is a block diagram illustrating a configuration of a conventional high-frequency power amplifier circuit.

FIG. 8 is an input / output characteristic diagram of a conventional high-frequency power amplifier circuit.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Signal input terminal 2 High frequency power amplifier 3 High frequency power amplifier 4 Semiconductor switch (power switch) 5, 6 Semiconductor switch (matching circuit switch) 7-10 Output matching circuit 11, 12 Input matching circuit 13 Signal output terminal 25 Signal input terminal 26 Signal output terminal 27-30 λ / 4 line 31, 32 Absorption resistor 33, 34 High frequency power amplifier 35 Radio section 36 Transmitting section 37 Receiving section 38 Intermediate frequency section 39 Duplexer 40 Antenna 41 High frequency power amplifying section 42 Audio Signal input terminal 43 Wireless signal input terminal 51 Satellite 52, 53 Mobile phone terminal 60 Signal input terminal 61-64 Input matching circuit 65-68 High frequency power amplifier 69-72 Semiconductor switch (matching circuit switching switch) 73-88 Output matching circuit 89, 90 Semiconductor switch (power switch) 9 Signal output terminal

 ──────────────────────────────────────────────────の Continued on the front page F-term (reference) 5J069 AA04 AA21 AA41 AA51 AA68 CA36 CA54 CA73 CA75 FA04 FA15 FA18 FA20 HA25 HA29 HA33 HA40 KA29 KA68 KC06 KC07 SA14 TA01 TA02 5J092 AA04 AA21 AA41 AA51 CA75 CA54 FA04 FA20 GR07 GR09 HA25 HA29 HA33 HA40 KA29 KA68 SA14 TA01 TA02 5K060 BB07 DD05 HH06 HH39 LL01 LL07

Claims (5)

[Claims] 1. A plurality of power amplifiers to which a signal applied to a signal input terminal is commonly input, and a plurality of power amplifiers each having an output terminal connected to a signal output terminal among the plurality of power amplifiers. And a plurality of matching switches provided corresponding to the plurality of power amplifiers and matching output impedances of the plurality of power amplifiers respectively corresponding to the plurality of operation modes. A plurality of matching circuit switching switches for selectively connecting any one of the matching circuits to the output terminal of each power amplifier for each of the plurality of matching circuit groups corresponding to the plurality of operation modes, respectively. High-frequency power amplifier circuit provided with. 2. The high-frequency power amplifier circuit according to claim 1, wherein the power amplifier is formed on a gallium arsenide substrate. 3. The high frequency power amplifier circuit according to claim 1, wherein the power amplifier is formed on a silicon substrate. 4. The high-frequency power amplifier circuit according to claim 1, wherein the matching circuit comprises a capacitance component and an inductive component. 5. A mobile phone terminal having a high-frequency power amplifier circuit for transmission output, wherein the high-frequency power amplifier circuit includes: a plurality of power amplifiers to which a signal applied to a signal input terminal is commonly input; A power switching switch for switching the number of power amplifiers whose output terminals are connected to the signal output terminal among the power amplifiers in accordance with a plurality of operation modes, respectively, provided corresponding to the plurality of power amplifiers, A plurality of matching circuit groups for matching output impedances of the plurality of power amplifiers respectively corresponding to the switching modes of the power switch, and a plurality of matching circuit groups corresponding to the plurality of operation modes, respectively. A plurality of matching circuit switching switches for selectively connecting any one of the matching circuits to the output terminal of each power amplifier. Terminal.