JP2861559B2 - Finishing method of film forming surface of film forming substrate - Google Patents

Finishing method of film forming surface of film forming substrate

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Publication number
JP2861559B2
JP2861559B2 JP3342465A JP34246591A JP2861559B2 JP 2861559 B2 JP2861559 B2 JP 2861559B2 JP 3342465 A JP3342465 A JP 3342465A JP 34246591 A JP34246591 A JP 34246591A JP 2861559 B2 JP2861559 B2 JP 2861559B2
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Japan
Prior art keywords
film
substrate
forming
film forming
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3342465A
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Japanese (ja)
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JPH05148066A (en
Inventor
聡 田中
道朝 飯山
Original Assignee
住友電気工業株式会社
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Application filed by 住友電気工業株式会社 filed Critical 住友電気工業株式会社
Priority to JP3342465A priority Critical patent/JP2861559B2/en
Publication of JPH05148066A publication Critical patent/JPH05148066A/en
Application granted granted Critical
Publication of JP2861559B2 publication Critical patent/JP2861559B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for finishing a film forming surface of a film forming substrate. More specifically, the present invention relates to a method for finishing a film-forming surface of a substrate used when producing an oxide superconducting thin film.

[0002]

2. Description of the Related Art In general, a substrate used for forming a thin film is selected according to a material constituting the thin film, characteristics required for the thin film, and the like. Except in special cases, it is preferable that no reaction or interdiffusion occurs between the substrate and the thin film.
On the other hand, the crystal state and crystal direction of the thin film are greatly affected by the crystal structure of the substrate. That is, when producing a thin film composed of a single crystal in a predetermined direction or a polycrystal having a predetermined orientation, it is necessary to select the crystal plane of the substrate material appearing on the substrate deposition surface.

An oxide superconductor has a crystal anisotropy in its superconducting characteristics. Therefore, when a thin film is formed, the crystal orientation of the constituent oxide superconductor is important. In addition, the oxide superconductor has relatively high reactivity, and further reacts with a substrate or the like, or the superconducting thin film in which the constituent elements of the substrate are diffused has significantly deteriorated superconductivity. In consideration of the above, an oxide superconducting thin film is formed on an MgO (100) substrate, Sr
An oxide substrate such as a TiO 3 (110) substrate or a YSZ substrate has been used.

[0004]

The above-mentioned substrate used for forming a thin film generally has its film-formed surface finished by chemical polishing using a chemical and mechanical polishing using an abrasive. However, the substrate used for forming the oxide superconducting thin film is not sufficiently finished by a combination of the above-described chemical polishing and mechanical polishing. Aggregation sometimes occurred on the film formation surface.

[0005] The oxide superconducting thin film has good crystallinity, and the smoother the film, the better the superconducting properties. In order to produce a smooth oxide superconducting thin film with good crystallinity, the crystallinity, flatness and uniformity of the substrate deposition surface are important.

It is an object of the present invention to provide a method for finishing a film-formed surface of a substrate so as not to cause the above-mentioned problems.

[0007]

[0008]

According to the present invention, there is provided a method for finishing a film forming surface of a film forming substrate having a film forming surface finished so as to be suitable for forming a thin film. a step of heat treatment by heating to 1,050-1,500 ° C. in
Etching the, etching the film forming surface is irradiated with ions at an angle not perpendicular to the deposition surface, a step of flattening by coating an insulator film-forming surface of the said etching, the insulator coating To form a smooth film deposition surface
Finishing method of film-forming surface of the deposition substrate which comprises a step is provided.

[0009]

The method for finishing the film-forming surface of the film-forming substrate of the present invention is as follows.
The substrate is heat-treated in an oxygen atmosphere, the so-called oblique etching is performed on the film forming surface, the insulator is coated on the etched film forming surface, and the insulator coating is flattened. The main feature is where the surface is formed. In the method of the present invention, heat treatment aggregates blowholes, crystal defects, and the like on the film formation surface. After this heat treatment, blow holes, crystal defects, and the like are aggregated and scattered on the film-forming surface of the substrate, and are removed by oblique etching. Since the film formation surface from which blow holes and crystal defects have been removed is not smooth in many cases, the surface is flattened by covering with an insulator, and the film formation surface is smoothed by etching back. When there are few blow holes and crystal defects, a smooth film-formed surface may be obtained by only one of the oblique etching and the etch back.

In the method of the present invention, blow holes, crystal defects and the like agglomerated by the heat treatment are removed by oblique etching in which ions are irradiated at an angle other than a right angle with respect to the film formation surface. This is because the etching in which ions are irradiated at right angles to the normal film-forming surface cannot remove blowholes and crystal defects, and may rather expand. After the oblique etching has been performed, the surface from which the blow holes and crystal defects have been removed is dented and not smooth, so an insulator such as silicon nitride is coated so that the surface becomes flat and etched back. To obtain a smooth film deposition surface. It is preferable to use a dry etching method such as reactive ion etching or Ar ion milling for each of the above etchings.

In the method of the present invention, it is preferable to perform the second heat treatment after the above-described etch-back is performed to form a smooth film-formed surface. This heat treatment is performed in order to further improve the crystal state of the film formation surface, and is performed in an oxygen atmosphere as in the first heat treatment.

In the method of the present invention, the heating temperature of each heat treatment is preferably 1050 to 1500 ° C., and the treatment time is preferably 5 to 10 hours. For example, a preferable heat treatment condition is a heating temperature.
1100 ° C, treatment time 8 hours. In the above heat treatment, if the heating temperature is lower than 1050 ° C., blow holes, crystal defects, and the like do not sufficiently aggregate, and the crystallinity and flatness of the film formation surface are not sufficiently improved. On the other hand, when the heating temperature is higher than 1500 ° C., evaporates from the reactor and the like adhere to the substrate, and the film formation surface of the substrate may be roughened.

On the other hand, in the method of the present invention, if the heat treatment time is less than 5 hours, the effect is not sufficient.
Even if the processing time exceeds 10 hours, the effect remains unchanged.
Therefore, the processing time is preferably 5 to 10 hours.

Hereinafter, the present invention will be described in more detail with reference to examples. However, the following disclosure is merely an example of the present invention and does not limit the technical scope of the present invention.

[0015]

EXAMPLE An oxide superconducting thin film was formed on a substrate finished by the method of the present invention and a substrate finished by a conventional method, and the superconducting characteristics of each were compared. The substrate contains MgO (10
0), SrTiO 3 (110) and YSZ. In the method of the present invention, the film forming surface of each substrate was finished as follows.

First, each substrate was heat-treated in an oxygen atmosphere. The heat treatment conditions are shown below. Heating temperature Time Oxygen flow rate MgO (100) 1100 ° C 8 hours 30ml / min SrTiO 3 (110) 1200 ° C 8 hours 30ml / min YSZ 1050 ° C 8 hours 30ml / min

After this heat treatment, 0.3 to
It was found that 0.6 blow holes / mm 2 were generated. Each of these substrates was obliquely etched with Ar ions under the following conditions. Acceleration voltage Incident angle MgO (100) 5 kV 20 ° SrTiO 3 (110) 5 kV 20 ° YSZ 5 kV 20 °

Next, a 100-nm-thick Si nitride layer was deposited on each substrate deposition surface by CVD so that the surface became flat. This silicon nitride layer is etched by Ar ion
The film was removed by etch-back, and the substrate deposition surface was smoothed. Ar
The conditions of ion etching are shown below. Further, a part of each substrate was heat-treated again in an oxygen atmosphere. Heating temperature Time Oxygen flow rate MgO (100) 1100 ° C 8 hours 30ml / min SrTiO 3 (110) 1200 ° C 8 hours 30ml / min YSZ 1050 ° C 8 hours 30ml / min

On the other hand, in the conventional method, each substrate film-forming surface is chemically polished with hydrochloric acid, and then mechanically polished using chromium oxide powder or alumina powder to obtain a mirror finish. A Y 1 Ba 2 Cu 3 O 7-X oxide superconducting thin film was formed on these substrate deposition surfaces by off-axis sputtering, and the critical temperature and critical current density were measured. The film forming conditions are shown below.

The superconducting properties of the produced Y 1 Ba 2 Cu 3 O 7-X oxide superconducting thin film are shown below.

[0021]

[Table 2]

As described above, the oxide superconducting thin film formed on the substrate having the film-formed surface finished by the method of the present invention is superior to the oxide superconducting thin film formed on the conventional substrate. It shows superconducting characteristics. This is because the film-formed surface finished by the method of the present invention has excellent flatness and crystallinity, so that the oxide superconductor formed thereon has good smoothness and crystallinity. . In this embodiment, the process of obliquely etching the film formation surface and the process of covering the insulator and etching back to flatten it were performed continuously, but a method of selecting only one of the processes is also possible. It is.

[0023]

As described in detail above, a thin film having excellent characteristics can be formed on a substrate having a film-formed surface finished by the method of the present invention. This is achieved by the method of the present invention.
This is because distortion and crystal defects on the substrate deposition surface can be removed. The method of the present invention is particularly effective when applied to an oxide single crystal substrate on which an oxide superconducting thin film is formed.

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int. Cl. 6 , DB name) C01G 1/00-57/00 C30B 29/22 501 H01L 39/00-39/24

Claims (2)

(57) [Claims]
1. A method for finishing a film forming surface of a film forming substrate having a film forming surface finished so as to be suitable for forming a thin film, wherein the substrate is heated to 1050 to 1500 ° C. in an oxygen atmosphere.
A step of heat treatment in the step of etching the film forming surface is irradiated with ions at an angle not perpendicular to the deposition surface, a step of flattening by coating an insulator film-forming surface of the said etching
And etching the insulator coating to form a smooth film-forming surface and forming a smooth film-forming surface.
2. A method of finish film formation surface of the deposition substrate according to claim 1, characterized in that the heat treatment again in an oxygen atmosphere after removing the insulation coating.
JP3342465A 1991-11-30 1991-11-30 Finishing method of film forming surface of film forming substrate Expired - Lifetime JP2861559B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3342465A JP2861559B2 (en) 1991-11-30 1991-11-30 Finishing method of film forming surface of film forming substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3342465A JP2861559B2 (en) 1991-11-30 1991-11-30 Finishing method of film forming surface of film forming substrate

Publications (2)

Publication Number Publication Date
JPH05148066A JPH05148066A (en) 1993-06-15
JP2861559B2 true JP2861559B2 (en) 1999-02-24

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JP (1) JP2861559B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3398638B2 (en) * 2000-01-28 2003-04-21 裕道 太田 Light emitting diode, semiconductor laser and method for manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01302845A (en) * 1988-05-31 1989-12-06 Sumitomo Electric Ind Ltd Package of integrated circuit
JPH02248304A (en) * 1989-03-20 1990-10-04 Mitsubishi Metal Corp Production of superconductor thin film
JP2605148B2 (en) * 1989-10-20 1997-04-30 シャープ株式会社 Manufacturing method of oxide thin film

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