JPH02248304A - Production of superconductor thin film - Google Patents
Production of superconductor thin filmInfo
- Publication number
- JPH02248304A JPH02248304A JP1068701A JP6870189A JPH02248304A JP H02248304 A JPH02248304 A JP H02248304A JP 1068701 A JP1068701 A JP 1068701A JP 6870189 A JP6870189 A JP 6870189A JP H02248304 A JPH02248304 A JP H02248304A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- polishing
- superconductor
- superconductor thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 27
- 239000002887 superconductor Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 238000005498 polishing Methods 0.000 claims abstract description 13
- 230000003746 surface roughness Effects 0.000 claims abstract description 9
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 7
- 238000003754 machining Methods 0.000 abstract description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 abstract 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 abstract 1
- 235000012254 magnesium hydroxide Nutrition 0.000 abstract 1
- 239000000347 magnesium hydroxide Substances 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は超伝導体薄膜の製造方法、特にＭｇＯ単結晶薄
膜基板上にビスマス系酸化物超伝導体薄［従来の技術］
従来のこの種のビスマス系酸化物超伝導体薄膜の製造方
法にあっては、ビスマス系酸化物超伝導体の結晶体の原
子間距離と単結晶ＭｇＯ基板のそれとがほぼ同じ程度で
あるところから、まず該単結晶基板を（１００）面でス
ライスして、この表面を光学的に鏡面研磨していた。こ
の単結晶基板の表面粗さ（凹凸）は１００Ａ （＝０．
０１ μｍ）程度であった。そして、このＭｇＯ基板
を、約７００℃に加熱しスパッタリングにより、ビスマ
ス系の酸化物超伝導体薄膜（ＢｉＣａＳｒＣｕ２０ｘ）
を形成していた。７００°Ｃでの高温スパッタリングと
したのは、ａｓ−ｄｅｐｏｓ ｉ ｔｅｄで超伝導性を
示す薄膜を得るためである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for producing a superconductor thin film, particularly a method for producing a bismuth-based oxide superconductor thin film on an MgO single crystal thin film substrate [Prior art] In the method for producing a bismuth-based oxide superconductor thin film, since the interatomic distance of the bismuth-based oxide superconductor crystal is approximately the same as that of a single-crystal MgO substrate, A crystal substrate was sliced along the (100) plane, and the surface was optically mirror-polished. The surface roughness (unevenness) of this single crystal substrate is 100A (=0.
01 μm). Then, this MgO substrate is heated to about 700°C and sputtered to form a bismuth-based oxide superconductor thin film (BiCaSrCu20x).
was forming. The high-temperature sputtering at 700°C was used to obtain a thin film exhibiting superconductivity when deposited as-is.
［発明が解決しようとする課題］
しかしながら、このような従来の超伝導体薄膜の製造方
法にあっては、単結晶基板上に堆積した薄膜はなかなか
単結晶化せず、その一部にＣ軸の方向のずれた結晶が残
って多結晶のような膜が生成されてしまうという問題点
があった。[Problems to be Solved by the Invention] However, in such conventional methods for manufacturing superconductor thin films, the thin film deposited on a single crystal substrate does not easily become a single crystal, and some of the thin films have C-axis There is a problem in that crystals with a shifted direction remain, resulting in a polycrystalline film.
そこで、高温スパッタリング中に単結晶ＭｇＯ基板表面
の（１００）面の原子配列に沿ってビスマス系酸化物超
伝導体の原子が正確に配列し易くする必要がある。Therefore, it is necessary to facilitate accurate alignment of the atoms of the bismuth-based oxide superconductor along the atomic alignment of the (100) plane on the surface of the single-crystal MgO substrate during high-temperature sputtering.
このためには、■基板の被堆積面（表面）が正確に（１
００）面によって形成され、■基板の被堆積面の近傍（
深さ方向）の転位、空孔の密度が低く、その結果、基板
の被堆積面にあって原子配列の乱れが少なく、■基板被
堆積面の表面粗さが原子オーダーで凹凸がなければよく
、ざらに■該基板被堆積面によごれがないことが重要で
ある。For this purpose, ■ the deposition surface (surface) of the substrate must be accurately (1
00) plane, and ■near the deposition surface of the substrate (
The density of dislocations and vacancies (in the depth direction) is low, and as a result, there is little disorder in the atomic arrangement on the deposition surface of the substrate, and the surface roughness of the substrate deposition surface should be on the atomic order, with no irregularities. It is important that the surface on which the substrate is deposited is free from dirt.
そこで、この点に着眼しての実験の結果、■基板の結晶
面方位の誤差、および０表面のよごれは現在の基板製造
、表面ポリシング技術にあっては無視できる程度の範囲
に制御されているが、以下の点についてコントロールす
る必要がある。すなわち、■基板表面の転位密度が一定
値（その深さ方向にあって５００人までの範囲で１０ケ
／ｃＴＩＩ２）以下であり、かつ、０表面粗さが１０人
（０，００１μｍ）以下であれば、完全な単結晶の成膜
が可能であることが判明した。Therefore, as a result of experiments focusing on this point, it was found that: - Errors in the crystal plane orientation of the substrate and dirt on the surface are controlled to a negligible range with current substrate manufacturing and surface polishing technology. However, the following points need to be controlled. In other words, ■ the dislocation density on the substrate surface is below a certain value (10 cases/cTII2 in the depth direction up to 500 people), and the zero surface roughness is below 10 people (0,001 μm). It was found that complete single-crystal film formation is possible if this is the case.
具体的には、基板表面をメカノケミカルポリッシングに
よって非機械的に原子オーダーの超精密研磨加工を行う
ものである。これによりＭｇＯ基板のスライシング以降
の機械加工によって生じた表面の損傷（転位等）を取り
除くとともに、その表面粗さを１０Å以下とするもので
ある。Specifically, the substrate surface is non-mechanically polished to an atomic order using mechanochemical polishing. This removes surface damage (such as dislocations) caused by machining after slicing the MgO substrate, and also reduces the surface roughness to 10 Å or less.
しかしながら、このメカノケミカルポリッシングにあっ
ては、軟質パウダ（砥粒）とともにアルカリ性の加工液
を使用するので、この加工液によって基板表面にＭｇ（
ＯＨ）２が生成、残留してしまい、超伝導体薄膜の成長
時にあってその単結晶化を阻害するという新たな課題が
生じていた。However, in this mechanochemical polishing, an alkaline processing liquid is used together with soft powder (abrasive grains), so this processing liquid coats the substrate surface with Mg (
A new problem has arisen in that OH)2 is generated and remains, which inhibits single crystallization during the growth of superconductor thin films.
そこで、本発明は、基板表面の研磨後にマイクロ波を照
射することにより、配向性の高い超伝導体薄膜を基板上
に形成することのできる超伝導体薄膜の製造方法を提供
することをその目的とじている。Therefore, an object of the present invention is to provide a method for manufacturing a superconductor thin film that can form a highly oriented superconductor thin film on a substrate by irradiating microwaves after polishing the surface of the substrate. It is closed.
［課題を解決するための手段］
本発明は、基板表面部の結晶面の配向性を高めた薄膜用
の単結晶基板を準備する工程と、該基板表面をポリシン
グすることにより、その表面粗さを１０Å以下にし、そ
の転位密度を所定値以下にする工程と、基板表面に酸化
物超伝導体の薄膜を被着する工程と、を備えた超伝導体
薄膜の製造方法にあって、上記ポリシング後の基板表面
にマイクロ波を照射する工程、を備えた超伝導体薄膜の
製造方法である。[Means for Solving the Problems] The present invention includes a step of preparing a single crystal substrate for a thin film in which the orientation of crystal planes on the surface of the substrate is improved, and polishing the surface of the substrate to improve the surface roughness. 10 Å or less and the dislocation density is below a predetermined value, and a step of depositing a thin film of an oxide superconductor on the surface of the substrate, the method comprises the steps of: This method of manufacturing a superconductor thin film includes a subsequent step of irradiating the surface of the substrate with microwaves.
［作用］
本発明に係る超伝導体薄膜の製造方法にあっては、例え
ばメカノケミカルボリジングによって単結晶基板の表面
を、その表面粗さが１０Ａ以下、転位密度が所定値以下
に制御する。例えば加工変質層を表面から除去するもの
である。そして、このポリシングの後に、例えば超伝導
体薄膜の基板表面へのデポジションの前に、一定波長範
囲のマイクロ波を基板表面に照射する。この結果、上記
ポリシングによって表面に残存した化合物のみが気化、
蒸発し、良好な薄膜の成長を達成することができた。な
お、このマイクロ波の発射装置はデポジション装置内に
設置してもよい。[Function] In the method for producing a superconductor thin film according to the present invention, the surface of the single crystal substrate is controlled to have a surface roughness of 10 A or less and a dislocation density of not more than a predetermined value, for example, by mechanochemical boriding. For example, a process-affected layer is removed from the surface. After this polishing, for example, before a superconductor thin film is deposited on the substrate surface, the substrate surface is irradiated with microwaves in a certain wavelength range. As a result, only the compounds remaining on the surface due to the polishing mentioned above are vaporized.
It was possible to evaporate and achieve good thin film growth. Note that this microwave emitting device may be installed within the deposition device.
［発明の効果］
以上説明してきたように、本発明に係る超伝導体薄膜の
製造方法にあっては、単結晶基板上にａｓ−ｄｅｐｏｓ
ｉｔｅｄで配向性の高い超伝導体薄膜を形成することが
できる。[Effects of the Invention] As explained above, in the method for producing a superconductor thin film according to the present invention, as-depos
It is possible to form a superconductor thin film with high orientation.
［実施例］
次表の実施例では、７００℃におけるスパッタリングを
施している。また、このスパッタリングの前に一定波長
範囲のマイクロ波を基板表面に照射している。[Example] In the example shown in the following table, sputtering was performed at 700°C. Furthermore, before this sputtering, microwaves within a certain wavelength range are irradiated onto the substrate surface.
（続き）(continuation)
Claims (1)
結晶基板を準備する工程と、 該基板表面をポリシングすることにより、その表面粗さ
を１０Å以下にし、その転位密度を所定値以下にする工
程と、 基板表面に酸化物超伝導体の薄膜を被着する工程と、を
備えた超伝導体薄膜の製造方法にあって、上記ポリシン
グ後の基板表面にマイクロ波を照射する工程、を備えた
ことを特徴とする超伝導体薄膜の製造方法。(1) A step of preparing a single-crystal substrate for a thin film with improved orientation of crystal planes on the surface of the substrate, and polishing the surface of the substrate to reduce the surface roughness to 10 Å or less and reduce the dislocation density to a predetermined level. A method for producing a superconductor thin film comprising the steps of: reducing the oxide superconductor to a value equal to or less than the above polishing value; and depositing a thin film of an oxide superconductor on the surface of the substrate, the method comprising: irradiating the surface of the substrate after polishing with microwaves; A method for producing a superconductor thin film, comprising the steps of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1068701A JPH02248304A (en) | 1989-03-20 | 1989-03-20 | Production of superconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1068701A JPH02248304A (en) | 1989-03-20 | 1989-03-20 | Production of superconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02248304A true JPH02248304A (en) | 1990-10-04 |
Family
ID=13381336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1068701A Pending JPH02248304A (en) | 1989-03-20 | 1989-03-20 | Production of superconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02248304A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05148066A (en) * | 1991-11-30 | 1993-06-15 | Sumitomo Electric Ind Ltd | Finishing method of film surface on substrate for film formation |
| WO2005015575A1 (en) * | 2003-08-06 | 2005-02-17 | Sumitomo Electric Industries, Ltd. | Superconducting wire and its production method |
-
1989
- 1989-03-20 JP JP1068701A patent/JPH02248304A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05148066A (en) * | 1991-11-30 | 1993-06-15 | Sumitomo Electric Ind Ltd | Finishing method of film surface on substrate for film formation |
| WO2005015575A1 (en) * | 2003-08-06 | 2005-02-17 | Sumitomo Electric Industries, Ltd. | Superconducting wire and its production method |
| JP2005056754A (en) * | 2003-08-06 | 2005-03-03 | Sumitomo Electric Ind Ltd | Superconductive wire and its manufacturing method |
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