JP2836015B2 - Electron emitting element, electron source, and method of manufacturing image forming apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron-emitting device, in particular, a surface conduction electron-emitting device, an electron source using the plurality of electron-emitting devices, and an image forming apparatus such as a display device or an exposure device using the same. Further, the present invention relates to a method for manufacturing the electron source and the image forming apparatus.

[0002]

2. Description of the Related Art One type of electron-emitting device is a surface-conduction electron-emitting device. The surface-conduction electron-emitting device is formed on a conductive film formed on an insulating substrate in parallel with the film surface. This utilizes the phenomenon that electron emission occurs when a current flows.

[0003] As a typical configuration example of a surface conduction electron-emitting device, a conductive film such as a metal oxide that connects a pair of device electrodes provided on an insulating substrate is referred to as forming in advance. One in which an electron-emitting portion is formed by an energization process is exemplified. Forming is usually performed by applying a voltage to both ends of the conductive film and applying a current.The structure is changed by locally destroying, deforming or altering the conductive film, and the electron emitting portion is in an electrically high-resistance state. Is a process of forming The electron emission is performed from the vicinity of a crack generated in the electron emission portion by applying a voltage to the conductive thin film on which the electron emission portion is formed and causing a current to flow.

[0004] The above-mentioned electron-emitting device has an advantage that it can be formed in a large number over a large area because of its simple structure and easy manufacture. Therefore, various applications for utilizing this feature are being studied. For example, it can be used for an image forming apparatus such as a display device.

Conventionally, as an example of arranging a large number of surface conduction electron-emitting devices, the electron-emitting devices are arranged in parallel, and both ends (both device electrodes) of each electron-emitting device are interconnected (also referred to as a common interconnect). ), An electron source in which a number of rows each connected in () is also arranged (also referred to as a trapezoidal arrangement) (JP-A-1-313332, JP-A-1-283737, and JP-A-2-257552). In particular, in the case of a display device, a flat panel display device similar to a display device using liquid crystal can be used, and a large number of surface conduction electron-emitting devices are used as self-luminous display devices that do not require a backlight. A display device has been proposed in which an arranged electron source is combined with a phosphor that emits visible light when irradiated with an electron beam from the electron source (US Pat. No. 5,066,883).

In a display device using the above-mentioned surface conduction electron-emitting device, in order to obtain a high-quality and high-definition image on a large screen, the number of rows and columns of the electron-emitting device is several hundred to several thousand, respectively. It is necessary to arrange a very large number of electron-emitting devices. Therefore, it is desired that the electrical characteristics of each electron-emitting device be uniform and easy to control.

[0007]

However, when the conventional surface conduction electron-emitting device is driven for a long time, the self-heating of the electron-emitting portion due to a strong electric field or Joule heat causes a problem.
In some cases, the conductive film near the electron emitting portion was deformed or destroyed. When the conductive film is deformed or broken, the life of the element is shortened, and in an image forming apparatus using an electron source using a plurality of the elements, display quality is deteriorated.

In the conventional surface conduction electron-emitting device, a reactive current exists in the current observed as the device current, and it is necessary to remove the reactive current in order to improve the electron emission efficiency. .

SUMMARY OF THE INVENTION It is an object of the present invention to provide an image forming apparatus capable of preventing the above-mentioned deformation and destruction of a conductive film and having a stable display quality. Another object of the present invention is to eliminate the above-mentioned reactive current, improve the electron emission efficiency, and improve the display quality of the image forming apparatus.

[0010]

The invention according to claims 1 to 7 relates to a method for manufacturing an electron-emitting device, wherein a conductive film is formed on a conductive film.
After forming the crack , a bipolar voltage is applied between the device electrodes in an atmosphere containing a carbon compound.

[0011] The inventions of claims 8 to 10 are directed to a method of manufacturing an electron source.
The same substrate as the above-described method for manufacturing an electron-emitting device.
A plurality of electron-emitting devices are formed thereon.

Further, claim 11 and claim 12 use the electron source.
A method for manufacturing an image forming apparatus comprising:
1 is an invention of an image forming apparatus . Hereinafter, the present invention will be described using a surface conduction electron-emitting device as an example.

The surface conduction type electron-emitting device includes a flat type and a vertical type. First, a basic structure of the flat type electron-emitting device will be described.

FIGS. 1A and 1B are diagrams showing a basic structure of a flat surface conduction electron-emitting device.

In FIG. 1, 1 is a substrate, 2 is an electron-emitting portion,
3 is a conductive film, 4 and 5 are device electrodes, and 6 is a coating.

As the substrate 1, for example, quartz glass, Na
And glass having reduced impurity content such as glass, blue plate glass, a laminate obtained by laminating SiO ₂ on a blue plate glass by a sputtering method or the like, and ceramics such as alumina.

The materials of the opposing device electrodes 4 and 5 include:
Common conductor materials are used, such as Ni, Cr, Au,
Metals or alloys such as Mo, W, Pt, Ti, Al, Cu, Pd, and Pd, Ag, Au, RuO ₂ , Pd-Ag
Printed conductors composed of metals or metal oxides and glass and the like, transparent conductors such as In ₂ O ₃ —SnO ₂ , and semiconductor conductor materials such as polysilicon are appropriately selected.

The element electrode interval L, the element electrode length W, the shape of the conductive film 3 and the like are designed depending on the form to be applied.

The distance L between the device electrodes is preferably several hundred to several hundred μm, and more preferably several μm to several tens μm depending on the voltage applied between the device electrodes 4 and 5.

The element electrode length W is preferably several μm to several hundred μm in consideration of the resistance value and electron emission characteristics of the electrode, and the element electrode thickness d is several hundred μm to several μm.

The surface conduction electron-emitting device shown in FIG. 1 is formed by laminating element electrodes 4 and 5 and a conductive film 3 on a substrate 1 in this order. The conductive film 3 and the device electrodes 4 and 5 may be stacked in this order.

In order to obtain good electron emission characteristics, the conductive film 3 is particularly preferably a fine particle film composed of fine particles. It is appropriately selected according to the resistance value between the electrodes 4 and 5 and the forming conditions described later. The thickness of the conductive film 3 is preferably several Å to several thousand 、, particularly preferably 10 to 500 、, and its resistance value is 10 ³ to Å.
The sheet resistance is 10 ⁷ Ω / □.

As a material constituting the conductive film 3, for example, Pd, Pt, Ru, Ag, Au, Ti, In, Cu,
Metals such as Cr, Fe, Zn, Sn, Ta, W, and Pb;
oxides such as dO, SnO ₂ , In ₂ O ₃ , PbO, Sb ₂ O ₃ , HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , Y
B _4, GdB borides such as _4, TiN, ZrN, nitrides such as HfN, Si, a semiconductor or the like of Ge, and the like.

The fine particle film is a film in which a plurality of fine particles are gathered, and has a fine structure not only in a state in which the fine particles are individually dispersed and arranged, but also in a state in which the fine particles are adjacent to each other or overlap each other (island shape). ). In the case of a fine particle film, the particle size of the fine particles is preferably several to several thousand, and particularly preferably 10 to 200.

The electron emitting portion 2 contains a crack, and the electron emission is performed from the vicinity of the crack. The electron-emitting portion 2 including the crack and the crack itself have a thickness, film quality,
It is formed depending on a material and a manufacturing method such as forming conditions described later. Therefore, the position and shape of the electron-emitting portion 2 are not limited to the position and shape as shown in FIG.

The crack may have conductive fine particles having a particle size of several to several hundreds of mm. The conductive fine particles are similar to some or all of the elements of the material constituting the conductive film 3.

In the present invention, the electron emitting portion 2 having a crack and the coating 6 containing highly crystalline carbon are provided on both potential sides near the electron emitting portion.

Next, the basic structure of the vertical surface conduction electron-emitting device will be described.

FIG. 2 is a view showing a basic structure of a vertical electron-emitting device. In FIG. 2, reference numeral 21 denotes a step forming member.
The same reference numerals indicate the same members.

The substrate 1, the electron-emitting portion 2, the conductive film 3, the device electrodes 4, 5, and the coating 6 are made of the same material as that of the above-mentioned flat type electron-emitting device.

The step forming member 21 is formed, for example, by a vacuum evaporation method,
It is made of an insulating material such as SiO ₂ provided by a printing method, a sputtering method or the like. The film thickness of the step forming member 21 corresponds to the device electrode interval L (see FIG. 1) of the flat-type electron-emitting device described above. It is set according to the applied voltage or the like, but is preferably several hundreds of mm to several tens of μm, and particularly preferably several hundreds of mm to several μm.

Since the conductive film 3 is usually formed after the formation of the device electrodes 4 and 5, the conductive film 3 is laminated on the device electrodes 4 and 5. make,
The device electrodes 4 and 5 may be stacked on the conductive film 3. Further, as described in the description of the flat-type electron-emitting device, the formation of the electron-emitting portion 2 depends on the thickness, the film quality, the material of the conductive film 3 and the manufacturing method such as the forming conditions described later. The shape and shape are not limited to the position and shape as shown in FIG.

In the following description, a plane type electron emitting device will be described as an example of the above-mentioned flat type electron emitting device and vertical type electron emitting device. Is also good.

Various methods are conceivable as a method for manufacturing the surface conduction electron-emitting device. One example will be described with reference to FIG. In FIG. 3, the same reference numerals as those in FIG. 1 indicate the same members.

1) After sufficiently cleaning the substrate 1 with a detergent, pure water and an organic solvent, depositing an element electrode material by a vacuum evaporation method, a sputtering method, or the like, and then depositing the element on the surface of the substrate 1 by a photolithography technique. Electrodes 4 and 5 are formed (FIG. 3A).

2) An organic metal solution is applied onto the substrate 1 on which the device electrodes 4 and 5 are provided, and the solution is allowed to stand.
And an element electrode 5 are connected to form an organic metal thin film.
Here, the organic metal solution is a solution of an organic compound having a metal as a constituent material of the conductive film 3 as a main element. After this,
The organic metal thin film is heated and baked to form a conductive film 3 patterned by lift-off, etching, or the like (FIG. 3B). Here, the description has been given of the method of applying the organic metal solution. However, the present invention is not limited thereto. For example, the organic metal solution may be formed by a vacuum deposition method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method, a spinner method, or the like. A film can also be formed.

3) Subsequently, an energization process called forming is performed. When electricity is supplied from a power source (not shown) between the device electrodes 4 and 5, an electron emitting portion 2 having a changed structure is formed at the conductive film 3 (FIG. 3C). This conductive treatment causes the conductive film 3 to be locally destroyed, deformed or deteriorated,
The portion where the structure has changed is the electron emission portion 2.

FIG. 4 shows an example of a forming voltage waveform.

The voltage waveform is particularly preferably a pulse waveform.
There are a case where a voltage pulse with a constant pulse peak value is continuously applied (FIG. 4A) and a case where a voltage pulse is applied while increasing the pulse peak value (FIG. 4B).

First, the case where the pulse peak value is a constant voltage will be described with reference to FIG.

In FIG. 4A, T ₁ and T ₂ are the pulse width and pulse interval of the voltage waveform, for example, T ₁ is 1 μm.
sec~10msec, the T ₂ 10μsec~100m
The peak value (peak voltage at the time of forming) is appropriately selected according to the form of the above-described electron-emitting device, and is applied for several seconds to several tens of minutes in a vacuum atmosphere having an appropriate degree of vacuum. Note that the voltage waveform to be applied is not limited to the illustrated triangular wave, and a desired waveform such as a rectangular wave can be used.

Next, a case where a voltage pulse is applied while increasing the pulse peak value will be described with reference to FIG.

T ₁ and T ₂ in FIG.
As in (a), the peak value (peak voltage at the time of forming) is increased by, for example, about 0.1 V steps,
The voltage is applied in an appropriate vacuum atmosphere similar to that described with reference to FIG.

During the pulse interval T ₂ , the element current is measured at a voltage that does not locally destroy, deform or alter the conductive film 3 (see FIGS. 1 and 2), for example, a voltage of about 0.1 V. Then, the resistance value is obtained, and when the resistance value indicates, for example, 1 MΩ or more, the forming is terminated.

4) Next, a bipolar voltage pulse is applied to the device after the forming step in the presence of a carbon compound in the presence of a carbon compound to form a film 6 containing highly crystalline carbon on the electron emission portion 2 and on both potential sides near the electron emission portion 2. Is activated.

In the present invention, the activation step refers to, for example, introducing a carbon compound such as a hydrocarbon generated from a vacuum exhaust device or the like, or a carbon compound supplied from a gas cylinder or the like at an appropriate partial pressure to 10 ^-4. A voltage at which the pulse peak value shown in FIG. 18 (a) or FIG. 19 (a) is kept constant at the device electrodes 4 and 5 of the device after the previous forming step at a degree of vacuum of about -10 ^-5 torr. And driving the element. FIG. 18A shows the case where the polarity of the one-polarity pulse voltage is reversed during the process, and FIG. 19A shows the AC pulse voltage. By the process,
The device current _If and the emission current _Ie change significantly. This step is performed while measuring _If and _Ie . For example, the step ends when _Ie is saturated.

When the above carbon compound is introduced, for example,
Aliphatic hydrocarbons such as alkanes, alkenes and alkynes,
Examples thereof include aromatic hydrocarbons, alcohols, aldehydes, ketones, amines, organic acids such as phenol, carboxylic acid, and sulfonic acid, and derivatives thereof.

V in FIGS. 18 (a) and 19 (a)
_p, V _n is the pulse peak value of each of the positive and negative pulses, electron releasable voltage, i.e. below 6
Against a threshold voltage V _th in (a), it is preferably a V _m> V _th and V _n <-V _th, more preferably, of equal voltage to the operational drive voltage magnitude.

In both figures, T _1p (T _1n ) is the pulse width of the positive polarity (negative polarity), and in FIG.
_2p (T _2n ) is the pulse interval of the positive polarity (negative polarity), FIG.
In (a), T _pn and T _np are pulse intervals, which are appropriately set according to the form of the element, atmosphere, and the like. The pulse width is 1 μsec to 10 msec, and the pulse interval is 10 μsec.
sec to 100 msec is desirable. The pulse waveform is not limited to a triangular wave or a rectangular wave, and a desired waveform such as a sine wave can be used.

FIGS. 18 (b) and 19 (b) show time changes of the device current _If and the emission current _Ie during the activation process in the voltage waveforms of FIGS. 18 (a) and 19 (a), respectively. is a schematic diagram showing, in the polarity inversion activation drive with the polarity reversal of the middle driving voltage of treatment (FIG. 18), when the polarity inversion, with a decrease of the temporary I _f and I _e, alternating activation Such a change is not seen in driving (FIG. 19).
The element current and emission current on the vertical axis in FIGS. 18B and 19B are arbitrary values.

As described above, in the atmosphere containing the carbon compound in the gaseous phase, the electrons are emitted from the electron emitting portion 2, whereby the carbon compound molecules existing in the vicinity of the electron emitting portion 2 are decomposed by the emitted electrons. Carbon and a carbon compound are deposited on the electron emitting portion 2 and the conductive film 3 near both potential sides thereof.

At the same time, the deposited carbon and the carbon compound are continuously irradiated with the emitted electrons, so that the carbon and the carbon compound have a higher crystallinity. As a result, a film having a high melting point and high resistance to a strong electric field is formed on the electron-emitting portion and the conductive film 3 in the vicinity thereof. Further, in the present invention, since the activation process is performed by polarity reversal or AC voltage, the above-mentioned coating is formed on both potential sides of the electron emitting portion 2, so that the film is formed more than when only one side is formed. It has a highly resistant configuration.

Further, when the electron emission characteristics of the electron-emitting device of the present invention, which has been activated by the AC drive, are measured by the measurement method described later, the electron emission characteristics are compared with those of the activation process by driving a DC or unipolar pulse wave. As a result, the result that the electron emission efficiency (emission current / device current) was improved was obtained. This was particularly noticeable in AC activation (FIG. 19).

The above-mentioned carbon and carbon compound are graphite (indicating both single crystal and polycrystal) and amorphous carbon (indicating amorphous carbon and a mixture thereof with polycrystalline graphite). Further, the deposited film thickness is preferably several Å to several thousand Å, more preferably several tens to several hundred Å.

5) More preferably, the thus-produced electron-emitting device is operated and driven in a vacuum atmosphere having a degree of vacuum higher than the degree of vacuum in the forming step and the activation step. Further, more preferably, after the heating at 80 ° C. to 150 ° C. in the vacuum atmosphere with the higher degree of vacuum, the operation driving is performed.

The vacuum atmosphere having a degree of vacuum higher than the degree of vacuum in the forming step and the activation treatment is, for example, about 10 ^−6.
It is a degree of vacuum having a degree of vacuum of torr or more, more preferably an ultrahigh vacuum system, and a degree of vacuum in which carbon and carbon compounds are not newly deposited.

By the step 5), further deposition of carbon and carbon compounds is suppressed, and the device current and emission current are stabilized.

The basic characteristics of the surface conduction electron-emitting device thus obtained will be described below.

FIG. 5 is a schematic block diagram showing an example of a measurement evaluation system for measuring the electron emission characteristics of the surface conduction electron-emitting device. First, this measurement evaluation system will be described.

In FIG. 5, the same symbols as those in FIG. 1 denote the same members. Reference numeral 51 denotes a power supply for applying a device voltage _Vf to the device; 50, an ammeter for measuring a device current _If flowing through the conductive film 3 between the device electrodes 4 and 5; An anode electrode for capturing the emission current _Ie emitted, 53 is a high-voltage power supply for applying a voltage to the anode electrode 54, 52 is an ammeter for measuring the emission current _Ie , 55 is a vacuum device, 56 Is an exhaust pump.

The electron-emitting device, the anode electrode 54 and the like are installed in a vacuum device 55. The vacuum device 55 is equipped with necessary equipment such as a vacuum system (not shown). Can be measured and evaluated.

The exhaust pump 56 is composed of a normal high vacuum system such as a turbo pump and a rotary pump, and an ultrahigh vacuum system such as an ion pump.
The entire vacuum device 55 and the substrate 1 of the electron-emitting device are
The heater can heat up to about 200 ° C. In this measurement evaluation system, at the stage of assembling a display panel (see 201 in FIG. 8) described later, the display panel and the inside thereof are configured as the vacuum device 55 and the inside, so that the above-described forming step, activation It can be applied to the measurement evaluation and processing in the chemical conversion step and the subsequent steps described later.

The basic characteristics of the surface conduction electron-emitting device described below were determined by setting the voltage of the anode electrode 54 in the above-mentioned measurement and evaluation system to 1 kV to 10 kV and setting the distance H between the anode electrode 54 and the electron-emitting device to 2 to 8 mm. It is based on measurements.

First, the emission current I _e and the device current _If ,
FIG. 6 shows a typical example of the relationship with the element voltage _Vf . still,
In FIG. 6, since the emission current _Ie is significantly smaller than the device current _If , it is shown in arbitrary units.

As is clear from FIG. 6, the electron-emitting device has the following three characteristic characteristics with respect to the emission current _Ie .

First, the device voltage V _f of the electron-emitting device is higher than a certain voltage (called a threshold voltage: V _{th in} FIG. 6).
Is applied, the emission current _Ie sharply increases, while the emission current _Ie is hardly detected below the threshold voltage _Vth .
That is, it is a non-linear element having a clear threshold voltage V _th with respect to the emission current I _e .

Second, since the emission current _Ie has a characteristic that monotonically increases with respect to the device voltage _Vf (referred to as MI characteristic), the emission current _Ie can be controlled by the device voltage _Vf .

Thirdly, the amount of charge emitted by the anode electrode 54 (see FIG. 5) depends on the time during which the device voltage _Vf is applied. That is, the amount of charge captured by the anode electrode 54 can be controlled by the time during which the device voltage _Vf is applied.

The emission current _Ie is equal to MI with respect to the device voltage _Vf .
At the same time having a characteristic, it may have a MI characteristic with respect to the device current I _f also the device voltage V _f. FIG. 6A shows an example of the characteristics of such a surface conduction electron-emitting device. On the other hand, as shown in FIG. 6B, the device current _If changes with respect to the device voltage _Vf by a voltage-controlled negative resistance characteristic (VCN).
R characteristic). Which characteristic is exhibited depends on the manufacturing method of the electron-emitting device, the measurement conditions at the time of measurement, and the like. However, the device current _If is equal to V with respect to the device voltage _Vf .
Even in an electron-emitting device having CNR characteristics, the emission current _Ie has MI characteristics with respect to the device voltage _Vf .

Next, the arrangement of the surface conduction electron-emitting devices in the electron source of the present invention will be described.

The arrangement of the surface conduction electron-emitting devices in the electron source of the present invention is not limited to the ladder arrangement as described in the section of the prior art, or to the arrangement of n Y-direction wirings on m X-direction wirings. There is an arrangement method in which directional wiring is provided via an interlayer insulating layer, and an X-directional wiring and a Y-directional wiring are connected to a pair of device electrodes of the electron-emitting device, respectively. This is hereinafter referred to as a simple matrix arrangement. First, the simple matrix arrangement will be described in detail.

According to the basic characteristics of the above-mentioned surface conduction electron-emitting device, the emitted electrons in the electron-emitting device arranged in a simple matrix are not affected by the voltage exceeding the threshold voltage.
It can be controlled by the peak value and pulse width of the pulse voltage applied between the opposing element electrodes. On the other hand, below the threshold voltage, almost no electrons are emitted. Therefore, even when a large number of electron-emitting devices are arranged, if the pulse-like voltage is appropriately applied to each of the devices, the electron-emitting device can be selected according to the input signal, and the amount of electron emission can be controlled. Individual electron-emitting devices can be selected and driven independently only by the matrix wiring.

The simple matrix arrangement is based on such a principle, and the configuration of the electron source having the simple matrix arrangement, which is an example of the electron source of the present invention, will be further described with reference to FIG.

In FIG. 7, the substrate 1 is a glass plate or the like as described above, and the number and shape of the surface conduction electron-emitting devices 104 arranged on the substrate 1 are appropriately set according to the application. is there.

The m X-direction wirings 102 have external terminals D _x1 , D _x2 ,..., D _xm , respectively.
The conductive metal is formed by a vacuum deposition method, a printing method, a sputtering method, or the like. Further, the material, the film thickness, and the wiring width are set so that the voltage is supplied to the many electron-emitting devices 104 almost uniformly.

The n Y-direction wirings 103 have external terminals D _y1 , D _y2 ,..., D _yn , respectively.
02 is created in the same way as the above.

These m X-directional wires 102 and n Y wires
An interlayer insulating layer (not shown) is provided between the direction wirings 103, and is electrically separated to form a matrix wiring. Note that both m and n are positive integers.

The interlayer insulating layer (not shown) is, for example, SiO ₂ formed by a vacuum deposition method, a printing method, a sputtering method, or the like, and has a desired shape on the entire surface or a part of the substrate 1 on which the X-directional wiring 102 is formed. In particular, the film thickness, material, and manufacturing method are appropriately set so as to withstand the potential difference at the intersection of the X-direction wiring 102 and the Y-direction wiring 103.

Further, device electrodes (not shown) opposed to the electron-emitting devices 104 are formed by m X-directional wirings 102, n Y-directional wirings 103, a vacuum deposition method, a printing method, a sputtering method, or the like. Electrically connected by a connection 105 made of a conductive metal or the like.

Here, the m X-directional wires 102, the n Y-directional wires 103, the connection 105, and the opposing element electrodes may have some or all of the same constituent elements. Further, they may be different from each other, and are appropriately selected from the above-described materials of the device electrodes and the like. The wires to these device electrodes may be collectively referred to as device electrodes when the material is the same as the device electrodes. The electron-emitting device 104 is provided on the substrate 1
Alternatively, it may be formed on an interlayer insulating layer (not shown).

As will be described later in detail, the X-directional wiring 102 has electron-emitting devices 104 arranged in the X-direction.
A scanning signal applying unit (not shown) for applying a scanning signal is electrically connected to scan the row according to the input signal.

On the other hand, a modulation signal generating means (not shown) for applying a modulation signal in order to modulate each of the rows of the electron-emitting devices 104 arranged in the Y direction according to an input signal is provided on the Y-direction wiring 103. Are electrically connected. Further, the drive voltage applied to each electron-emitting device 104 is supplied as a difference voltage between a scanning signal and a modulation signal applied to the electron-emitting device 104.

Next, an example of the image forming apparatus of the present invention using the electron source of the present invention having the above-described simple matrix arrangement will be described with reference to FIGS. 8 is a diagram showing the basic configuration of the display panel 201, FIG. 9 is a diagram showing the fluorescent film 114, and FIG. 10 is a diagram showing the display panel 201 of FIG.
FIG. 2 is a block diagram illustrating an example of a driving circuit for performing television display in accordance with a TSC television signal.

In FIG. 8, reference numeral 1 denotes a substrate of an electron source on which the surface conduction electron-emitting devices are arranged as described above, 111 denotes a rear plate to which the substrate 1 is fixed, and 116 denotes a glass substrate.
13 is a face plate in which a fluorescent film 114 and a metal back 115 are formed on the inner surface. Reference numeral 112 denotes a support frame, and frit glass or the like is applied to the rear plate 111, the support frame 112, and the face plate 116, and is applied in the air or in nitrogen. Then, the envelope 118 is formed by baking at 400 to 500 ° C. for 10 minutes or more for sealing.

In FIG. 8, reference numeral 2 corresponds to the electron-emitting portion in FIG. 102 and 103 are electron-emitting devices 104
X-direction wiring connected to the pair of device electrodes 4 and 5 and Y
In the direction wirings, respectively external terminals D _x1 to D _xm, and a D _y1 to D _yn.

The envelope 118 includes the face-plate 116, the support frame 112, and the rear plate 111 as described above. However, the rear plate 111 is provided mainly for the purpose of reinforcing the strength of the substrate 1. If the substrate 1 itself has sufficient strength, the separate rear plate 111 is unnecessary, and the support frame is directly attached to the substrate 1. Seal 112,
The envelope 118 may be constituted by the face plate 116, the support frame 112, and the substrate 1. Further, by further providing a support (not shown) called a spacer between the face plate 116 and the rear plate 111, the envelope 118 having sufficient strength against atmospheric pressure can be obtained.

The fluorescent film 114 is composed of only the phosphor 122 in the case of monochrome, but in the case of the color fluorescent film 114, depending on the arrangement of the phosphor 122, a black stripe (FIG. 9A) or a black matrix (FIG. 9
(B)) a black conductive material 121 and a phosphor 122 called
It is composed of The purpose of providing the black stripes and the black matrix is to make the mixed portions between the phosphors 122 of the three primary colors necessary for color display black so that mixed colors and the like are not noticeable, and to reflect external light on the fluorescent film 114. Is to suppress a decrease in contrast due to As a material of the black conductive material 121, not only a material mainly containing graphite, which is often used, but also a material having conductivity and low light transmission and reflection may be used. it can.

As a method of applying the phosphor 122 to the glass substrate 113, a precipitation method or a printing method is used regardless of monochrome or color.

Further, as shown in FIG.
A metal back 115 is usually provided on the inner surface side of 4.
The purpose of the metal back 115 is to improve the brightness by mirror-reflecting light toward the inner surface side of the light emitted from the phosphor 122 (see FIG. 9) toward the glass substrate 113, and to apply an electron beam acceleration voltage. Acting as an electrode,
For example, protection of the phosphor 122 from damage due to collision of negative ions generated in the envelope 118 is performed. Metal back 1
15 can be manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film 114 after the fluorescent film 114 is manufactured, and then depositing Al by vacuum evaporation or the like.

The face plate 116 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 114 in order to further increase the conductivity of the fluorescent film 114.

When the above-mentioned sealing is performed, in the case of color, the phosphors 122 of each color must correspond to the electron-emitting devices 104, so that it is necessary to perform sufficient alignment.

The inside of the envelope 118 is evacuated to a degree of vacuum of about 1 × 10 ⁻⁷ torr through an exhaust pipe (not shown) and sealed. Also, a getter process may be performed immediately before or after sealing the envelope 118. This is a process of heating a getter (not shown) arranged at a predetermined position in the envelope 118 to form a deposited film. The getter is usually composed mainly of Ba or the like, and is used to maintain a degree of vacuum of, for example, 1 × 10 ⁻⁵ to 1 × 10 ⁻⁷ torr by the adsorption action of the deposited film.

The above-described forming and subsequent manufacturing steps of the electron-emitting device are usually performed immediately before or after sealing of the envelope 118, and the contents thereof are as described above.

The display panel 201 described above is, for example, shown in FIG.
Can be driven by a driving circuit as shown in FIG.
In FIG. 10, 201 is a display panel, 202 is a scanning circuit, 203 is a control circuit, 204 is a shift register,
205 is a line memory, 206 is a synchronization signal separation circuit, 2
07 the modulation signal generator, V _x and V _a are DC voltage sources.

As shown in FIG. 10, the display panel 20
1 is connected to an external electric circuit through the external terminals D _x1 to D _xm, external terminals D _y1 to D _yn and a high-voltage terminal Hv.
Of these, the external terminals D _{x1 to} D _xm are connected to the display panel 201.
A scanning signal is applied to sequentially drive the electron-emitting devices provided therein, that is, electron-emitting device groups arranged in a matrix of m rows and n columns, one row at a time (n devices).

On the other hand, to the external terminals D _{y1 to} D _yn , a modulation signal for controlling the output electron beam of each electron-emitting device in one row selected by the scanning signal is applied. Also,
The high-voltage terminal Hv, the DC voltage source V _a, for example, 10k
V DC voltage is supplied. This is an accelerating voltage for applying sufficient energy to the electron beam output from the electron-emitting device to excite the phosphor.

The scanning circuit 202 includes m switching elements (schematically indicated by S _{1 to} S _m in FIG. 10), and each of the switching elements S _{1 to} S _m includes a DC voltage power supply V _x. , Or 0 V (ground level), and is electrically connected to the external terminals D _{x1 to} D _{xm of} the display panel 201. Each of the switching elements S _{1 to} S _m operates based on a control signal T _scan output from the control circuit 203, and is actually easily configured by combining elements having a switching function such as an FET, for example. It is possible.

[0098] The DC voltage source V _x in this example, based on said characteristics of the surface conduction electron-emitting device (the threshold voltage), scanned non electron-emitting devices of the driving voltage applied thereto threshold voltage It is set to output a constant voltage as follows.

The control circuit 203 has a function of coordinating the operation of each unit so that appropriate display is performed based on an image signal input from the outside. Based on the synchronization signal T _sync next fed from the synchronizing signal separation circuit 206 to be described, T _scan, generating a respective control signal T _sft and T _mry to each unit.

The synchronizing signal separating circuit 206 is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC television signal input from the outside. As is well known, a frequency separating (filter) With the circuit,
It can be easily configured. Sync signal separation circuit 206
The sync signal separated by is composed of a vertical sync signal and a horizontal sync signal, as is well known. here,
It is illustrated as T _sync for convenience of explanation. On the other hand, the luminance signal component of the image separated from the television signal is referred to as DAT for convenience.
This is shown as an A signal. This DATA signal is input to the shift register 204.

The shift register 204 is for serially / parallel-converting the DATA signal input serially in time series for each line of an image, and is based on a control signal _Tsft sent from the control circuit 203. Work. This control signal _Tsft may be rephrased as a shift clock of the shift register 204. The data of one line of the serial-parallel-converted image (corresponding to the drive data of n electron-emitting devices) is represented by I
Examples n parallel signals _d1 ~I _dn shift register 2
04.

The line memory 205 is a storage device for storing data for one line of an image for a required time.
Stores the contents of the appropriate I _d1 ~I _dn according to the control signal T _mry sent from the control circuit 203. The stored content is I
It is output as _d'1 ~I _d'n, is input to the modulation signal generator 207.

The modulation signal generator 207 is a signal source for appropriately driving and modulating each of the electron-emitting devices in accordance with each of the image data I _{d′ 1 to} I _{d′ n} .
The voltage is applied to the electron-emitting devices in the display panel 201 through the terminals D _{y1 to} D _yn .

As described above, the electron-emitting device has a clear threshold voltage for electron emission, and electron emission occurs only when a voltage exceeding the threshold voltage is applied. For a voltage exceeding the threshold voltage, the emission current also changes in accordance with the change in the voltage applied to the electron-emitting device.
By changing the material, configuration, and manufacturing method of the electron-emitting device, the value of the threshold voltage or the degree of change of the emission current with respect to the applied voltage may change, but in any case, the following can be said.

That is, when a pulse-like voltage is applied to the electron-emitting device, for example, when a voltage lower than the threshold voltage is applied, electron emission does not occur, but when a voltage exceeding the threshold voltage is applied. Causes electron emission. At that time, first, it is possible to control the intensity of the output electron beam by changing the peak value of the voltage pulse. Second
By changing the width of the voltage pulse, it is possible to control the total amount of charges of the output electron beam.

Therefore, as a method of modulating the electron-emitting device according to the input signal, there are a voltage modulation method and a pulse width modulation method. In the case of performing the voltage modulation method, the modulation signal generator 207 generates a voltage pulse having a fixed length, and uses a voltage modulation circuit capable of appropriately modulating the pulse peak value according to input data. In the case of performing the pulse width modulation method, the modulation signal generator 207 generates a voltage pulse having a constant peak value, but a pulse width modulation method circuit capable of appropriately modulating the pulse width according to input data. Used.

The shift register 204 and the line memory 20
Reference numeral 5 may be a digital signal type or an analog signal type, as long as it can perform serial / parallel conversion and storage of an image signal at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the synchronization signal separating circuit 206 into a digital signal. This can be achieved by providing an A / D converter at the output of the synchronization signal separation circuit 206.

In connection with this, the line memory 20
Depending on whether the output signal of 5 is a digital signal or an analog signal,
The circuit provided in modulation signal generator 207 is slightly different.

That is, in the case of a voltage modulation method using a digital signal, a well-known D / A conversion circuit may be used as the modulation signal generator 207, and an amplification circuit or the like may be added as necessary. In the case of a pulse width modulation method using a digital signal, the modulation signal generator 207 includes, for example, a high-speed oscillator, a counter (counter) for counting the number of waves output from the oscillator, and an output value of the counter and an output value of the memory. It can be easily configured by using a circuit in which comparators for comparison are combined. Further, if necessary, an amplifier for amplifying the pulse width modulated signal output from the comparator to the drive voltage of the electron-emitting device may be added.

On the other hand, in the case of a voltage modulation method using an analog signal, an amplification circuit using, for example, a well-known operational amplifier may be used as the modulation signal generator 207, and a level shift circuit or the like may be added as necessary. You may. In the case of a pulse width modulation method using an analog signal, for example, a well-known voltage controlled oscillator (VCO) may be used. If necessary, an amplifier for amplifying the voltage up to the driving voltage of the electron-emitting device may be used. May be added.

The image forming apparatus of the present invention having the display panel 201 and the driving circuit as described above can apply the voltage from the terminals D _{x1 to} D _xm and D _{y1 to} D _yn so that the necessary electron emission elements can be used. Is excited by applying a high voltage to the metal back 115 or the transparent electrode (not shown) through the high voltage terminal Hv to accelerate the electron beam and causing the accelerated electron beam to collide with the fluorescent film 114. -By light emission, television display can be performed according to an NTSC television signal.

The configuration described above is a schematic configuration necessary for obtaining the image forming apparatus of the present invention used for display and the like, and detailed portions such as materials of each member are limited to those described above. Instead, it is appropriately selected so as to be suitable for the use of the image forming apparatus. Although the NTSC system has been described as an input signal, the image forming apparatus according to the present invention is not limited to this, and may employ another system such as a PAL or SECAM system. For example, a high-definition TV system such as a MUSE system may be used.

Next, an example of the above-described trapezoidal electron source and an image forming apparatus of the present invention using the same will be described with reference to FIGS.

[0115] In FIG. 11, 1 denotes a substrate, 104 is a surface conduction electron-emitting device, 304 are provided ten in common wiring connecting the electron-emitting devices 104, each have an external terminal D ₁ to D ₁₀ ing.

A plurality of electron-emitting devices 104 are arranged on the substrate 1 in parallel. This is called an element row. These element rows are arranged in a plurality of rows to constitute an electron source.

By applying an appropriate drive voltage between the common wiring 304 of each element row (for example, the common wiring 304 of the external terminals D ₁ and D ₂ ), each element row can be driven independently. That is, a voltage exceeding the threshold voltage may be applied to an element row where electron beams are to be emitted, and a voltage lower than the threshold voltage may be applied to an element row where electron beams are not desired to be emitted. Application of the driving voltage, the common wiring D ₂ to D ₉ located at each element rows, the external terminals D ₂ and D ₃ adjacent common wiring 304, i.e. each phase adjacent each phase, D ₄ and D ₅ it can also be performed as an integrated same wire common wiring 304 of D ₆ and D _7, D ₈ and D _9.

FIG. 12 is a view showing the structure of a display panel 301 provided with the above-mentioned trapezoidal arrangement of electron sources, which is another example of the electron source of the present invention.

[0119] Figure 12 in 302 grid electrodes, an opening for electrons to pass through 303, D ₁ to D _m are external terminals for applying voltage to each electron-emitting device, G ₁ ~G _n grid electrodes 302 External terminal connected to the Further, the common wiring 304 between each element row is formed on the substrate 1 as an integral same wiring.

In FIG. 12, the same reference numerals as those in FIG. 8 denote the same members, and the main difference between the display panel 201 using the electron sources having the simple matrix arrangement shown in FIG. The point is that a grid electrode 302 is provided between the electrodes 116.

The grid electrode 302 is provided between the substrate 1 and the face plate 116 as described above. The grid electrode 302 is capable of modulating the electron beam emitted from the electron-emitting device 104. The grid electrode 302 allows the electron beam to pass through a stripe-shaped electrode provided perpendicular to the ladder-shaped element row. In addition, one circular opening 303 is provided for each electron-emitting device 104.

The shape and arrangement position of the grid electrode 302
12, the openings 303 may be provided in a large number in a mesh shape, and the grid electrode 302 may be provided around or near the electron-emitting device 104, for example.

The external terminals D _{1 to} D _m and G _{1 to} G _n are connected to a drive circuit (not shown). Then, by applying a modulation signal for one image line to the column of the grid electrode 302 in synchronization with sequentially driving (scanning) the element rows one by one, each electron beam is irradiated on the fluorescent film 114. And images can be displayed line by line.

As described above, the image forming apparatus of the present invention
It can be obtained by using any of the electron sources of the present invention in a simple matrix arrangement or a trapezoidal arrangement, and is suitable not only for the above-described television broadcast display device, but also as a video conference system and a display device such as a computer. A device is obtained. Furthermore, the present invention can be used as an exposure device of an optical printer including a photosensitive drum.

[0125]

EXAMPLES Hereinafter, the present invention will be specifically described with reference to Examples, but the present invention is not limited to these Examples.
The present invention also encompasses a case in which each element is replaced or a design is changed within a range where the object of the present invention is achieved.

Embodiment 1 As a first embodiment of the present invention,
Two flat surface-conduction electron-emitting devices shown in FIG. 1 (devices A and B) were formed on the same substrate in accordance with the process shown in FIG.

Step-a A device electrode 4 was formed on a substrate 1 in which a 0.5 μm-thick silicon oxide film was formed on a cleaned blue plate glass by a sputtering method.
A photoresist (RD-2000N-41, manufactured by Hitachi Chemical Co., Ltd.) is formed on a pattern to be a gap L between the five layers, and 50 mm thick Ti and 1000 mm Ni are formed by vacuum evaporation.
Were sequentially deposited. The photoresist pattern is dissolved with an organic solvent, the Ni / Ti deposited film is lifted off, and the device electrodes 4 having a device electrode interval L = 10 μm and W = 300 μm.
5 was formed (FIG. 3A).

Step-b A 500-nm-thick Cr film is deposited on the entire surface of the substrate including the device electrodes 4 and 5 formed in step-a by vacuum evaporation, and a photoresist is applied on the entire surface. And using a mask (not shown) having an opening of a length L or more and a width of 100 μm in the vicinity thereof,
The electrode gap L and a part of the device electrodes 4 and 5 were exposed by etching of Cr in the openings to form a Cr mask having a width of 100 μm. Organic Pd (ccp4230;
Okuno Pharmaceutical Co., Ltd.) by spinner
A heating and baking treatment was performed at 00 ° C. for 10 minutes. After this,
The conductive film 3 was formed by etching the Cr with an acid etchant and lifting off (FIG. 3B). The conductive film 3 made of fine particles of PdO as the main component thus formed has a thickness of 120 ° and a sheet resistance of 1.
It was 5 × 10 ⁴ Ω / □. The fine particle film described here is a film in which a plurality of fine particles are aggregated as described above, and has a fine structure not only in a state in which the fine particles are individually dispersed and arranged, but also in a state in which the fine particles are adjacent to each other or overlap each other. (Including an island shape) film, and the particle size refers to the diameter of fine particles whose particle shape can be recognized in the above state.

Through the above steps, the device electrodes 4 and
5 and the conductive film 3 were formed.

Step-c Next, the substrate was set in the measurement and evaluation system shown in FIG. 5, evacuated by a vacuum pump, and reached a degree of vacuum of 2 × 10 ⁻⁵ torr. A voltage was applied between 5 and a forming process was performed. Voltage waveform of the forming treatment illustrates in FIG. 4 (b), the T ₁ was 1 msec, the T ₂ and 10 msec, the peak value of the voltage pulse is raised by 0.1V step was carried out forming treatment. During the processing, a resistance measuring pulse was inserted between T ₂ at a voltage of 0.1 V, and the resistance was measured. When the measured value became about 1 MΩ or more, the forming processing was terminated (FIG. 3C).

[0131] in between from the start to the end of the forming process, I _f takes a maximum value. The value is I _max , the voltage applied at this time (in the case of a pulse voltage, its peak value)
_Is called V _form . The forming voltage V _form of the devices A and B of this example was about 7.0V.

Step-d Subsequently, the device A subjected to the forming process is shown in FIG.
In the AC pulse waveform shown in (1), current was applied at a peak value of ± 18 V, and activation was performed. The other element B has a single-polarity pulse waveform shown in FIG.
A current was applied to 8 V and an activation process was performed.

The activation treatment is 1.5 × 10 ⁻⁵ to
Perform while measuring I _e at a vacuum of rr, and I _e is about 3
The activation process was terminated because the saturation occurred at 0 minutes.

The characteristics of the devices A and B manufactured in the above steps were evaluated at 1 × 10 ⁻⁶ torr and an applied voltage of +18 V. As a result, 1.0 mA at I _f is the element A, 1.2 mA in element B, 0.9μA with I _e is the element A, the element B 0.
6 μA, and the electron emission efficiency η = I _e / _If (%) was 0.09% for the device A and approximately 0.05% for the device B. Further, after the both elements driven in this state for 100 hours, 0 on again measured, the I _f the element A 0.7 mA, 0.6 mA in element B, and I _e are element A 0.5 .mu.A, the element B.
It was 2 μA.

As described above, the surface conduction electron-emitting device of the present invention has a high electron emission efficiency and excellent durability, and particularly, the device A which has been activated by an AC pulse is excellent.

Thereafter, in order to grasp the form of the surface conduction electron-emitting device, each of the devices A and B was observed with an electron microscope. As a result, in the element A, in the vicinity of the electron emission portion 2,
It was observed that a film was formed mainly on both potential sides near the boundary between the conductive film 3 and the substrate 1. A similar coating was observed on the element B, but it was present mainly on one side, the side to which a high potential was applied in the activation treatment.

Further, when observed with a high-magnification FE-SEM, a region where a coating is hardly formed near the electron emission portion 2 of the device B, ie, the device activated by a single polarity pulse, In the processing, deformation and movement of the fine particles and part of the conductive film 3 were observed in the region to which the low potential was applied. On the other hand, in the element A activated by the AC pulse, such a portion was hardly observed.

When this film was observed with TEM, Raman and the like, a film composed mainly of graphite and amorphous carbon and composed of carbon and a carbon compound was observed.

From these observations, it was found that the device B was driven for a long time by a strong electric field,
Partial destruction of the electron emission portion such as deformation and movement of the fine particles and part of the conductive film was caused, and as a result, the electron emission characteristics were significantly deteriorated. On the other hand, in the element A, the film containing high-crystalline carbon formed at both ends near the electron-emitting portion by the activation process using an AC pulse increases the resistance of the electron-emitting portion to a strong electric field and heat, and is good for a relatively long time. It has been found that it emits an electron.

[Embodiment 2] In this embodiment, an image forming apparatus having an electron source in which a large number of surface conduction electron-emitting devices of the element A type manufactured in Embodiment 1 are arranged in a simple matrix was constructed.

FIG. 13 is a plan view of a part of the electron source of this embodiment.
(Coating 6 is not shown). FIG. 14 is a sectional view taken along the line AA ′ in the figure. 13 to 16 indicate the same components. Here, 141 is an interlayer insulating layer, and 142 is a contact hole.

Step-a On a substrate 1 in which a 0.5 μm-thick silicon oxide film was formed on a cleaned blue plate glass by a sputtering method, 50 mm thick Cr and 6000 mm thick Au were sequentially laminated by vacuum evaporation. After that, a photoresist (AZ1370, manufactured by Hoechst) is spin-coated with a spinner and baked, and then a photomask image is exposed and developed to form a resist pattern of the lower wiring 102, and the Au / Cr deposited film is wet-etched. Thus, a lower wiring 102 having a desired shape was formed (FIG. 1).
5 (a)).

Step-b Next, an interlayer insulating layer 141 made of a silicon oxide film having a thickness of 1.0 μm was deposited by RF sputtering (FIG. 15).
(B)).

Step-c A photoresist pattern for forming the contact hole 142 was formed in the silicon oxide film deposited in the step-b, and the interlayer insulating layer 141 was etched using the photoresist pattern as a mask to form the contact hole 142. Etching is performed by RIE (Reactive) using CF ₄ and H ₂ gas.
(Ion Etching) method (FIG. 15).
(C)).

Step-d Thereafter, a pattern to be a gap L between the device electrodes 4 and 5 and the device electrode is formed by a photoresist (RD-2000N-4).
1, manufactured by Hitachi Chemical Co., Ltd.)
0% Ti and 1000% Ni were sequentially deposited. The photoresist pattern was dissolved with an organic solvent, the Ni / Ti deposited film was lifted off, and the element electrode interval L was 5 μm and the width W was 3
The device electrodes 4 and 5 of 00 μm were formed (FIG. 15).
(D)).

Step-e After forming a photoresist pattern of the upper wiring 103 on the device electrodes 4 and 5, a 50-mm thick Ti and 5000-cm Au are sequentially deposited by vacuum evaporation, and unnecessary portions are removed by lift-off. Thus, an upper wiring 103 having a desired shape was formed (FIG. 16E).

Step-f Next, a conductive film 3 was formed using a mask (not shown) (FIG. 16F). The mask is a mask having a gap L between device electrodes and an opening in the vicinity thereof. With this mask, a Cr film 161 having a thickness of 1000 ° is deposited and patterned by vacuum evaporation, and an organic Pd (ccp) is formed thereon.
4230, manufactured by Okuno Pharmaceutical Co., Ltd.) was spin-coated with a spinner and heated and baked at 300 ° C. for 10 minutes.
The thus formed conductive film 3 composed of fine particles of PdO as a main component had a thickness of 100 ° and a sheet resistance of 1.8 × 10 ⁴ Ω / □.

Step-g The Cr film 161 and the fired conductive film 3 were etched with an acid etchant to form a desired pattern. The width of the conductive film 3 was set to 200 μm (FIG. 16).
(G)).

Step-h A pattern was formed such that a resist was applied to portions other than the contact hole 142, and 50 .mu.m thick Ti and 5000 .ANG. Au were sequentially deposited by vacuum evaporation. Unnecessary portions were removed by lift-off to bury the contact holes 142 (FIG. 16H).

Through the above steps, the lower wiring 102, the interlayer insulating layer 141, the upper wiring 103, the device electrodes 4 and 5, and the conductive film 3 for forming the electron emission portion were formed on the insulating substrate 1.

The display panel shown in FIG. 8 was constructed using the unformed electron source manufactured as described above, and the image display device of the present invention was formed.

After fixing the unformed electron source substrate 1 manufactured in the above steps to the rear plate 111, the electron source 1
5 mm above, a face plate 116 (having a fluorescent film 114 and a metal back 116 formed on the inner surface of a glass substrate 113) is sufficiently aligned via a support frame 112 and arranged. Frame 11
2. A frit glass was applied to the joint of the rear plate 111 and sealed by baking at 400 ° C. to 500 ° C. in the air for 10 minutes or more. The fixing of the electron source substrate 1 to the rear plate 111 was also performed using frit glass.

In this embodiment, the phosphor has a stripe shape (see FIG. 9 (a)), and the material of the black stripe is a material mainly composed of graphite.
A slurry method was used as a method of applying the phosphor to No. 3.

The metal back 115 provided on the inner surface side of the fluorescent film 114 performs a smoothing process (filming) on the inner surface of the fluorescent film after the fluorescent film is formed.
1 was produced by vacuum evaporation. Face plate 1
In 16, in order to further increase the conductivity of the fluorescent film 114, a transparent electrode may be provided on the outer surface side of the fluorescent film 114. However, in this embodiment, since the metal back 115 alone provided sufficient conductivity, Omitted.

The atmosphere in the glass container completed as described above was evacuated to 1 × 1 with a vacuum pump through an exhaust pipe (not shown).
After evacuation to 0 ^-6 torr, a voltage was applied between the device electrodes through terminals D _{x1 to} D _xm to D _{y1 to} D _yn outside the container, and a forming process was performed to form an electron emission portion. At this time, the voltage waveform of the forming process is as shown in FIG.
The voltage was increased by 0.1 V at T ₁ = 1 msec and T ₂ = 10 msec. During the process, a resistance measurement pulse was inserted between T ₂ at a voltage of 0.1 V, and the forming process was terminated when the resistance value became about 1 MΩ or more. Forming voltage V
_{The form} was about 6.5V.

The electron-emitting portion 2 thus formed was in a state where fine particles mainly composed of PdO were dispersed and arranged, and the fine particles had an average particle diameter of 30 °.

Next, an AC pulse shown in FIG. 19A is applied between the device electrodes through the external terminals D _{x1 to} D _xm to D _{y1 to} D _yn under a vacuum atmosphere of 1.5 × 10 ^-5 torr. Then, an activation treatment for forming a film containing highly crystalline carbon was performed. The peak value of the activation treatment pulse was V _p = -V _n = 18V in the present embodiment. Further, regarding the pulse width and pulse interval, T _1p = T _1n = 1 msec, T _pn = T
_np = 10 msec. The activation process includes the emission current I _e
Was measured while _Ie was saturated in about 30 minutes, and the process was terminated at this point.

The gas was evacuated to a degree of vacuum of about 1 × 10 ^−6.5 torr, and an exhaust pipe (not shown) was fused by heating with a gas burner, and the envelope 118 was sealed.

Finally, in order to maintain the degree of vacuum after sealing, a getter process was performed by a high-frequency heating method.

The contents of the display panel manufactured as described above
Outer terminal D_x1~ D_xmOr D_y1~ D _yn, And high-voltage terminal H
v to the required drive systems, and complete the image forming apparatus.
Done. External terminal D for each element_x1~ D_xmOr D_y1~ D
_ynThrough the scanning signal and the modulation signal (not shown)
The electron emission is performed by applying each of the steps.
Several kV to the metal back 115 through the high voltage terminal Hv
The above high pressure is applied to accelerate the electron beam, and the fluorescent film 11
4 to display an image by exciting and emitting light
Was. In the image forming apparatus of this embodiment, the display stability is low.
A high-quality, high-quality display image was obtained.

[Embodiment 3] FIG. 17 shows an example of a display device according to the embodiment 2 configured to display image information provided from various image information sources such as a television broadcast. It is a figure for showing. 280 in the figure
Is a display panel, 261 is a display panel driving circuit, 262 is a display controller, 263
Is a multiplexer, 264 is a decoder, 265 is an input / output interface circuit, 266 is a CPU, 267 is an image generation circuit, 268, 269 and 270 are image memory interface circuits, 271 is an image input interface circuit, 272 and 273 are TV signal receiving circuits. Reference numeral 274 denotes an input unit. When the present display device receives a signal containing both video information and audio information, such as a television signal, it naturally reproduces the audio simultaneously with the display of the video. Descriptions of circuits, speakers, and the like related to reception, separation, reproduction, processing, storage, and the like of audio information that are not directly related to the above are omitted.

Hereinafter, each part will be described along the flow of the image signal.

First, the TV signal receiving circuit 273 is a circuit for receiving a TV image signal transmitted using a wireless transmission system such as radio waves or spatial optical communication. The format of the received TV signal is not particularly limited, and may be, for example, various systems such as the NTSC system, the PAL system, and the SECAM system. Further, a TV signal (for example, a so-called high-definition TV including the MUSE system) composed of a larger number of scanning lines than the above is suitable for taking advantage of the display panel suitable for a large area and a large number of pixels. Signal source. TV received by the TV signal receiving circuit 273
The signal is output to the decoder 264.

The image TV signal receiving circuit 272 is a circuit for receiving a TV image signal transmitted using a wired transmission system such as a coaxial cable or an optical fiber. As with the TV signal receiving circuit 273, the type of the TV signal to be received is not particularly limited, and the TV signal received by this circuit is also output to the decoder 264.

The image input interface circuit 27
Reference numeral 1 denotes a circuit for capturing an image signal supplied from an image input device such as a TV camera or an image reading scanner. The captured image signal is output to a decoder 264.

The image memory interface circuit 2
70 is a video tape recorder (hereinafter abbreviated as VTR)
Is a circuit for receiving the image signal stored in the decoder 264. The captured image signal is output to the decoder 264.

The image memory interface circuit 2
Reference numeral 69 denotes a circuit for capturing an image signal stored in the video disk. The captured image signal is output to the decoder 264.

The image memory-interface circuit 268 is a circuit for taking in an image signal from a device storing still image data, such as a so-called still image disk.
4 is output.

The input / output interface circuit 265
Is a circuit for connecting the present display device to an output device such as an external computer, a computer network, or a printer. In addition to inputting and outputting image data and character / graphic information, control signals and numerical data can be input and output between the CPU 266 of the display device and the outside in some cases.

The image generation circuit 267 is provided with image data and character / graphic information input from the outside via the input / output interface circuit 265, or the CPU 266.
This is a circuit for generating display image data based on the image data and character / graphic information output from the display unit. Inside this circuit, for example, a rewritable memory for storing image data and character / graphic information, a read-only memory storing an image pattern corresponding to a character code,
A circuit necessary for generating an image such as a processor for performing image processing is incorporated therein.

The display image data generated by this circuit is output to the decoder 264. In some cases, the display image data can be output to an external computer network or printer via the input / output interface circuit 265.

The CPU 266 mainly performs operations related to operation control of the display device and generation, selection, and editing of a display image.

For example, a control signal is output to the multiplexer 263, and image signals to be displayed on the display panel 280 are appropriately selected or combined. At that time, a control signal is generated for the display panel controller 262 in accordance with the image signal to be displayed, and the display frequency, the scanning method (for example, interlaced or non-interlaced), the number of scanning lines on one screen, and the like are displayed. The operation of the device is appropriately controlled.

Further, image data, character / graphic information is directly output to the image generation circuit 267, or an external computer or memory is accessed via the input / output interface circuit 265 to access the image data, character / graphic information.
Enter graphic information.

The CPU 266 may, of course, be involved in operations for other purposes. For example, like a personal computer or word processor,
It may be directly related to the function of generating and processing information.

Alternatively, the computer may be connected to an external computer network via the input / output interface circuit 265 as described above, and operations such as numerical calculations may be performed in cooperation with external devices.

The input section 274 is connected to the CPU 266.
The user inputs commands, programs, data, or the like, and various input devices such as a joystick, a barcode reader, and a voice recognition device can be used, for example, in addition to a keyboard and a mouse.

The decoder 264 converts various image signals input from the above 267 to 273 into three primary color signals,
Alternatively, it is a circuit for inversely converting a luminance signal into an I signal and a Q signal. As shown by a dotted line in FIG.
64 preferably has an image memory inside. This is for handling television signals that require an image memory when performing inverse conversion, such as the MUSE method. Further, the provision of the image memory facilitates the display of a still image, or the image generation circuit 26
7 and the CPU 266 in cooperation with the image processing, such as image thinning, interpolation, enlargement, reduction, and synthesis, and the advantage that editing can be easily performed.

The multiplexer 263 is connected to the CPU
A display image is appropriately selected based on a control signal input from the 266. That is, the multiplexer 263 selects a desired image signal from the inversely converted image signals input from the decoder 264 and outputs the selected image signal to the drive circuit 261. In that case, by switching and selecting an image signal within one screen display time, it is also possible to divide one screen into a plurality of areas and display different images depending on the areas, as in a so-called multi-screen TV. .

The display panel controller 2
Reference numeral 62 denotes a circuit for controlling the operation of the drive circuit 261 based on the control signal input from the CPU 266.

First, for example, a signal for controlling an operation sequence of a power supply (not shown) for driving the display panel is output to the drive circuit 261 as one related to the basic operation of the display panel.

Further, as a signal related to the display panel driving method, a signal for controlling, for example, a screen display frequency and a scanning method (for example, interlace or non-interlace) is output to the drive circuit 261.

In some cases, a control signal relating to image quality adjustment such as brightness, contrast, color tone, and sharpness of a display image may be output to the drive circuit 261.

The drive circuit 261 is a circuit for generating a drive signal to be applied to the display panel 280. The drive circuit 261 converts the image signal input from the multiplexer 263 and the control signal input from the display panel controller 262. It operates on the basis of:

The function of each section has been described above. With the configuration illustrated in FIG. 17, in this display device, image information input from various image information sources is displayed on the display panel 2.
70 can be displayed. That is, various image signals including television broadcasts are inversely converted by the decoder 264, appropriately selected by the multiplexer 263, and input to the drive circuit 261. On the other hand, the display controller 262 generates a control signal for controlling the operation of the drive circuit 261 according to the image signal to be displayed. The drive circuit 261 applies a drive signal to the display panel 280 based on the image signal and the control signal. Thus, an image is displayed on display panel 280. These series of operations are performed by the CPU 2
66 is controlled collectively.

In the present display device, an image memory incorporated in the decoder 264, an image generation circuit 267
And the involvement of the CPU 266 not only displays the selected one of the plurality of pieces of image information but also displays, for example, enlargement, reduction, rotation, movement, edge emphasis, thinning, interpolation, It is also possible to perform image processing such as color conversion and image aspect ratio conversion, and image editing such as combining, erasing, connecting, exchanging, and fitting. In the description of the present embodiment,
Although not particularly mentioned, a dedicated circuit for processing and editing audio information may be provided as in the above-described image processing and image editing.

Accordingly, the present display device is a television broadcast display device, a video conference terminal device, an image editing device that handles still and moving images, a computer terminal device, an office terminal device such as a word processor, a game terminal, and the like. It is possible to combine the functions of a single machine, etc., and has a very wide range of applications for industrial or consumer use.

FIG. 17 shows only an example of the image forming apparatus of the present invention, and it is needless to say that the present invention is not limited to this. For example, among the components shown in FIG. 17, circuits relating to functions that are not necessary for the purpose of use may be omitted. Conversely, additional components may be added depending on the purpose of use. For example, when the present display device is applied to a videophone, it is preferable to add a transmission / reception circuit including a television camera, an audio microphone, an illuminator, and a modem to the components.

In the present display device, in particular, it is easy to reduce the thickness of a display panel using a surface conduction electron-emitting device as an electron source, so that the depth of the display device can be reduced. In addition, display panels that use surface-conduction electron-emitting devices as electron sources are easy to enlarge and have high brightness and excellent viewing angle characteristics. It is possible to display well. In addition, by using an electron source that realizes stable and highly efficient electron emission characteristics, a long-life, bright, high-quality color flat television has been realized.

[0190]

As described above, according to the present invention, the durability of the device is improved, the life is extended, and the electron emission efficiency is improved. As a result, in the electron source using the electron-emitting device of the present invention and the image display device using the same, it has become possible to display a high-luminance good image for a long time.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a surface conduction electron-emitting device of the present invention.

FIG. 2 is a sectional view showing another embodiment of the surface conduction electron-emitting device of the present invention.

FIG. 3 is a diagram showing an example of a manufacturing process of the surface conduction electron-emitting device of the present invention.

FIG. 4 is a diagram showing a voltage waveform of an energization process for manufacturing the surface conduction electron-emitting device of the present invention.

FIG. 5 is a diagram showing a measurement evaluation system for evaluating the electron emission characteristics of the surface conduction electron-emitting device of the present invention.

FIG. 6 is a view showing electron emission characteristics of the surface conduction electron-emitting device of the present invention.

FIG. 7 is a schematic diagram of a simple matrix electron source of the present invention.

FIG. 8 is a diagram showing one embodiment of a display panel of the image forming apparatus of the present invention.

FIG. 9 is a diagram showing a fluorescent film used in the image forming apparatus of the present invention.

FIG. 10 is a block diagram of an embodiment of the image forming apparatus of the present invention.

FIG. 11 is a schematic view of a ladder-type electron source according to the present invention.

FIG. 12 is a diagram showing a display panel of the image forming apparatus of the present invention using a ladder-type electron source.

FIG. 13 is a diagram illustrating an electron source used in a display device according to a second embodiment of the present invention.

FIG. 14 is a partial sectional view of an electron source according to a second embodiment of the present invention.

FIG. 15 is a manufacturing process diagram of the electron source according to the second embodiment.

FIG. 16 is a manufacturing process diagram of the electron source according to the second embodiment.

FIG. 17 is a block diagram of an image forming apparatus according to a third embodiment of the present invention.

FIG. 18 is a diagram showing an example of a polarity inversion pulse voltage waveform in the activation processing of the present invention.

FIG. 19 is a diagram showing an example of an AC voltage waveform in the activation processing of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Electron emission part 3 Conductive film 4,5 Element electrode 6 Coating 21 Step forming member 50 Ammeter 51 Power supply 52 Ammeter 53 High voltage power supply 54 Anode electrode 55 Vacuum device 56 Exhaust pump 102 X direction wiring 103 Y direction Wiring 104 Surface conduction electron-emitting device 105 Connection 111 Rear plate 112 Support frame 113 Glass substrate 114 Fluorescent film 115 Metal back 116 Face plate 118 Enclosure 121 Black conductive material 122 Phosphor 141 Interlayer insulating layer 142 Contact hole 161 Cr film 201 display panel 202 scanning circuit 203 control circuit 204 shift register 205 line memory 206 synchronization signal separation circuit 207 modulation signal generator 261 drive circuit 262 display panel controller 263 multiplexer 264 deco 265 Input / output interface 266 CPU 267 Image generation circuit 268 Image memory interface 269 Image memory interface 270 Image memory interface 271 Image input memory interface 272 TV signal reception circuit 273 TV signal reception circuit 274 Input unit 280 Display panel 301 Display panel 302 Grid Electrode 303 Opening 304 Common wiring 401 Display panel

────────────────────────────────────────────────── ─── Continuation of front page (56) References JP-A-1-309242 (JP, A) JP-A-3-127428 (JP, A) JP-A-4-147534 (JP, A) JP-A-2- 299131 (JP, A) (58) Fields studied (Int. Cl. ⁶ , DB name) H01J 1/00-1/98 H01J 9/00-9/18 H01J 31/10-31/24

Claims (14)

(57) [Claims] 1. A method for manufacturing an electron-emitting device having a conductive film having an electron-emitting portion formed between electrodes, the method comprising :
After forming a crack in the film, the film is exposed to an atmosphere containing a carbon compound .
And applying a bipolar voltage between the electrodes . 2. The method according to claim 1, wherein the bipolar voltage is an AC voltage. 3. The method for manufacturing an electron-emitting device according to claim 1, wherein the bipolar voltage is a voltage for inverting the polarity of the one polarity voltage at least once during the process. 4. The method according to claim 1, wherein the bipolar voltage is pulsed.
Item 10. A method for manufacturing an electron-emitting device according to item 1. 5. The pulse-like bipolar voltage is a rectangular wave,
5. The electron-emitting device according to claim 4, which is a triangular wave or a sine wave.
Manufacturing method. 6. The method according to claim 1, wherein the carbon compound is an aliphatic hydrocarbon,
Aromatic hydrocarbons, alcohols, aldehydes, keto
Amines, amines, organic acids, or their derivatives
The method according to any one of claims 1 to 5, which is any one selected from the group consisting of:
A method for manufacturing an electron-emitting device . 7. The electron-emitting device according to claim 1, wherein the electron-emitting device is a surface conduction electron-emitting device.
7. An electron-emitting device according to claim 1,
Production method. 8. The method according to claim 1, wherein
It is characterized by forming a plurality of electron-emitting devices on one substrate
Method of manufacturing an electron source. 9. A plurality of electron-emitting devices are arranged in parallel and connected.
At least one element row composed of
Of an electron source with ladder-like wiring
5. The method according to claim 1, wherein
Manufacture of an electron source characterized by being manufactured by any one of methods
Method. 10. An element formed by arranging a plurality of electron-emitting devices.
Having at least one sub-row to drive the element
Method for manufacturing an electron source in which wires are arranged in a matrix
The electron-emitting device according to claim 1,
A method for producing an electron source, characterized in that it is produced by a method. 11. An electron source obtained by the method according to claim 9.
A control electrode for controlling an electron beam emitted from the electron source.
Forming an image by irradiation of an electron beam from the electron source
Image forming characterized by combining with an image forming member
Device manufacturing method. 12. An electron obtained by the method according to claim 10.
Forming an image by irradiating an electron beam from the electron source.
Image shape characterized by being combined with an image forming member
Manufacturing method of the forming device. 13. The method according to claim 11 or 12, wherein
Image forming apparatus. 14. A display device for television broadcasting, a television.
Conference system display device, computer display device
14. The image forming apparatus according to claim 13, wherein the image forming apparatus is used for any of the above.