JP2866312B2 - Electron source, image forming apparatus using the same, and methods of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron source having a plurality of surface conduction electron-emitting devices, and to an image forming apparatus such as a display device or an exposure device constituted by using the electron source. About the method.

[0002]

2. Description of the Related Art A surface conduction electron-emitting device utilizes a phenomenon in which an electron is emitted by passing a current through a conductive thin film formed on an insulating substrate in parallel with the film surface.

As a typical configuration example of a surface conduction electron-emitting device, a conductive thin film such as a metal oxide which connects a pair of device electrodes provided on an insulating substrate is referred to as forming in advance. One in which an electron-emitting portion is formed by an energization process is exemplified. Forming is usually performed by applying a voltage to both ends of the conductive thin film and conducting electricity.The conductive thin film is locally destroyed, deformed or altered to change its structure, and the electron-emitting portion is in an electrically high-resistance state. Is a process of forming The electron emission is performed from the vicinity of a crack generated in the electron emission portion by applying a voltage to the conductive thin film on which the electron emission portion is formed and causing a current to flow.

The above-mentioned surface conduction electron-emitting device has an advantage that it can be formed in a large number over a large area since it has a simple structure and is relatively easy to manufacture. Therefore, various applications for utilizing this feature are being studied. For example, it can be used for an image forming apparatus such as a charged beam source and a display device.

Conventionally, as an example of arranging a large number of surface conduction electron-emitting devices, a surface conduction electron-emitting device is arranged in parallel, and both ends (both device electrodes) of each surface conduction electron-emitting device are wired. (Also referred to as a common wiring). An electron source in which rows connected by a plurality of rows (also referred to as a common wiring) are arranged in a large number of rows (also referred to as a trapezoidal arrangement) (JP-A-64-31332, JP-A-1-2302).
83749, JP-A-2-257552).

In particular, in the case of a display device, a flat panel display device similar to a display device using liquid crystal can be used, and a self-luminous display device that does not require a backlight is used as a surface conduction electron emission device. There has been proposed a display device in which an electron source in which a number of elements are arranged and a phosphor that emits visible light when irradiated with an electron beam from the electron source are combined (US Pat. No. 5,066,883).

In an electron source in which a large number of surface conduction electron-emitting devices are arranged and formed as in the above-described trapezoidal arrangement, it is common to form (row-form) one row of surface conduction electron-emitting devices in a lump. It is a target. Here, the collective forming means that forming is performed by supplying power from a predetermined power supply unit (one or a plurality) to a large number of elements, and necessarily means that a large number of elements are simultaneously formed. It does not do.

[0008]

However, the conventional line forming method as described above has the following problems.

FIG. 24 shows an equivalent circuit in some examples of electron sources arranged in a one-dimensional ladder arrangement, and a voltage applied to each element immediately before forming each element when a constant voltage is applied to a power supply unit. The difference of (power) depending on the element address is shown. FIG. 24A shows an example in which the power supply unit is disposed at one position at one end of the ladder line, and one grounding unit is disposed at the other end. FIG. FIG. 24 shows an example in which the lines are arranged at one end on the same side of the line.
(C) is an example in which the power supply unit and the ground unit are arranged at both ends of the ladder line, respectively.

In the equivalent circuit of FIG. 24, R is an element resistance before forming, and r is a wiring resistance.
The element resistance after the forming is larger than the element resistance R by two to three digits or more. As is clear from the equivalent circuit, even when there is no variation in the element resistance R and the wiring resistance r, the divided voltages applied to the respective elements are not equal. The voltage (power) applied immediately before the element is formed varies.

Since the state of the electron-emitting portion including the crack formed by the forming changes depending on conditions such as the voltage applied during the forming, the electron-emitting characteristics between the respective elements in the above-described conventional line forming method. Will vary. Since this is more pronounced as the number of elements in the line forming direction increases, especially in a large-area electron source in which a large number of surface conduction electron-emitting devices are arranged and formed, or in an image forming apparatus using the electron source,
This causes a luminance unevenness and an image unevenness, so that a high quality image cannot be obtained, which is a serious problem.

The present invention has been made in view of the above-mentioned problems of the prior art, and has been made in consideration of the above-mentioned problems with the prior art. It is an object of the present invention to reduce variation in characteristics between elements due to forming in an image forming apparatus using a light source.

[0013]

The structure of the present invention made to achieve the above object is as follows.

[0014] The first present invention, on a substrate, thus forming the forming the conductive thin film to contact between a pair of device electrodes
Has been the element array you wire a plurality of surface conduction electron-emitting device the electron emission portion is provided, in the method of manufacturing an electron source having at least one row, between the device electrodes of the electron-emitting device of at least the one column when performing a forming by applying a voltage to lump sum, in the manufacturing method of the electron source, characterized in that to cool the entire electron source.

[0015] The present invention secondly, on a substrate, thus forming the forming the conductive thin film to contact between a pair of device electrodes
Has been the element array you wire a plurality of surface conduction electron-emitting device the electron emission portion is provided, in the method of manufacturing an electron source having at least one row, between the device electrodes of the electron-emitting device of at least the one column when performing a forming by applying a voltage to lump sum, in the manufacturing method of the electron source, characterized in that cooling the wiring portion connecting the plurality several electron-emitting devices.

[0016] A of the present invention three is on the substrate, thus forming the forming the conductive thin film to contact between a pair of device electrodes
Has been the element array you wire a plurality of surface conduction electron-emitting device the electron emission portion is provided, in the method of manufacturing an electron source having at least one row, between the device electrodes of the electron-emitting device of at least the one column when performing a forming by applying a voltage to lump sum, in the manufacturing method of the electron source, characterized in that to cool the conductive thin film portion of the plurality of electron-emitting devices.

The fourth aspect of the present invention, on a substrate, thus forming the forming the conductive thin film to contact between a pair of device electrodes
Has been the element array you wire a plurality of surface conduction electron-emitting device the electron emission portion is provided, in the method of manufacturing an electron source having at least one row, between the device electrodes of the electron-emitting device of at least the one column when performing a forming by applying a voltage to lump sum, an electron source, characterized by cooling the wiring part that connects the plurality several electron-emitting devices, and a conductive thin film portion of the plurality of electron-emitting devices Manufacturing method.

The first, second and fourth aspects of the present invention further include:
As a feature, a wiring connecting the plurality of electron-emitting devices is provided.
Must have a positive temperature coefficient with respect to electrical resistance.
And Further, the first, third and fourth aspects of the present invention,
Further, as a feature, a conductive thin film of the electron-emitting device is provided.
Must have a negative temperature coefficient with respect to electrical resistance.
And Further, the first to fourth aspects of the present invention further include, as its features, that the wirings of the electron-emitting devices are arranged in a matrix, and the wirings of the electron-emitting devices are arranged in a ladder shape. .

A fifth aspect of the present invention is to form a conductive thin film, which connects between a pair of device electrodes, on a substrate by forming.
The element array you wire a plurality of surface conduction electron-emitting device the electron emission portion is formed is provided Te, at least 1
An electron source having column, in the manufacturing method of an image forming apparatus having an image forming member for forming an image by irradiation of electron beams emitted from the electron source, one between the device electrodes of the electron-emitting device of at least the one row Batch And cooling the entire electron source when forming by applying a voltage.

The sixth aspect of the present invention, on a substrate, thus forming the forming the conductive thin film to contact between a pair of device electrodes
It has been the element array you wire a plurality of surface conduction electron-emitting device the electron emission portion is provided to form an electron source comprising at least one row, an image by irradiation of electron beams emitted from the electron source in the manufacturing method of an image forming apparatus having an image forming member, in performing forming by applying a voltage to lump sum to between the device electrodes of the electron-emitting device of at least the one row, connecting the plurality several electron-emitting devices A method for manufacturing an image forming apparatus, comprising cooling a wiring portion.

The seventh present invention, on a substrate, thus forming the forming the conductive thin film to contact between a pair of device electrodes
It has been the element array you wire a plurality of surface conduction electron-emitting device the electron emission portion is provided to form an electron source comprising at least one row, an image by irradiation of electron beams emitted from the electron source in the manufacturing method of an image forming apparatus having an image forming member, in performing forming by applying a voltage to lump sum to between the device electrodes of the electron-emitting device of at least the one row, conductive of the plurality of electron-emitting devices A method for manufacturing an image forming apparatus, comprising cooling a conductive thin film portion.

The eighth present invention, on a substrate, thus forming the forming the conductive thin film to contact between a pair of device electrodes
It has been the element array you wire a plurality of surface conduction electron-emitting device the electron emission portion is provided to form an electron source comprising at least one row, an image by irradiation of electron beams emitted from the electron source in the manufacturing method of an image forming apparatus having an image forming member, in performing forming by applying a voltage to lump sum to between the device electrodes of the electron-emitting device of at least the one row, connecting the plurality several electron-emitting devices A method for manufacturing an image forming apparatus, comprising: cooling a wiring portion and a conductive thin film portion of the plurality of electron-emitting devices.

The fifth, sixth and eighth aspects of the present invention further include:
As a feature, a wiring connecting the plurality of electron-emitting devices is provided.
Must have a positive temperature coefficient with respect to electrical resistance.
And In addition, the fifth, seventh and eighth aspects of the present invention,
Further, as a feature, a conductive thin film of the electron-emitting device is provided.
Must have a negative temperature coefficient with respect to electrical resistance.
And Further, the fifth to eighth aspects of the present invention further include, as its features, that the wirings of the electron-emitting devices are arranged in a matrix, and the wirings of the electron-emitting devices are arranged in a ladder shape. .

Further, the present invention resides in an electron source or an image forming apparatus obtained by the manufacturing method of the present invention.

The basic configuration of the surface conduction electron-emitting device according to the present invention is a planar type in which a pair of device electrodes are formed on the same surface, and a pair of device electrodes which are vertically positioned via an insulating layer. There are two vertical configurations.

First, a plane type surface conduction electron-emitting device will be described.

FIGS. 1A and 1B are views showing the basic structure of a flat surface conduction electron-emitting device. In the figure, 1 is a substrate, 2 is an electron emitting portion, 3 is a conductive thin film, 4
And 5 are device electrodes.

As the substrate 1, for example, quartz glass, Na
And glass having reduced impurity content such as glass, blue plate glass, a laminate obtained by laminating SiO ₂ on a blue plate glass by a sputtering method or the like, and ceramics such as alumina.

The materials of the opposing device electrodes 4 and 5 are as follows.
A general conductor material is used, for example, Ni, Cr, Au,
Mo, W, Pt, Ti, Al, Cu, metal or an alloy such as Pd, and Pd, Ag, Au, printed conductors composed of RuO _2, metal or metal oxide such as Pd-Ag and glass, etc. , In ₂ O ₃ —SnO _2, etc., and a semiconductor conductor material such as polysilicon.

The element electrode interval L, the element electrode length W, the shape of the conductive thin film 3 and the like are appropriately designed depending on the applied form and the like.

The distance L between the device electrodes is preferably several hundred μm to several hundred μm, and more preferably several μm to several hundred μm depending on the voltage applied between the device electrodes 4 and 5 and the electric field strength capable of emitting electrons. 10 μm.

The element electrode length W is preferably several μm to several hundred μm in consideration of the resistance value and electron emission characteristics of the electrode, and the element electrode thickness d is several hundred μm to several μm.

The planar surface conduction electron-emitting device shown in FIG. 1 is formed by laminating element electrodes 4 and 5 and a conductive thin film 3 on a substrate 1 in this order. To
The conductive thin film 3 and the device electrodes 4 and 5 may be stacked in this order.

In order to obtain good electron emission characteristics, the conductive thin film 3 is particularly preferably a fine particle film composed of fine particles. It is set as appropriate according to the resistance value between the electrodes 4 and 5 and the energization forming conditions described later. The thickness of the conductive thin film 3 is preferably several Å to several thousand 、, and particularly preferably 10 to 500 、.
It is a sheet resistance value of 10 ³ to 10 ⁷ Ω / □.

Examples of the material forming the conductive thin film 3 include Pd, Pt, Ru, Ag, Au, Ti, In, and C.
u, Cr, Fe, Zn, Sn, Ta, W, and Pb, _{etc., PdO, SnO 2, In 2} O 3, PbO, Sb 2 O
Oxides such as ₃ , HfB ₂ , ZrB ₂ , LaB ₆ , CeB
₆ , borides such as YB ₄ and GdB ₄ , TiC, ZrC, H
carbides such as fC, TaC, SiC, WC, TiN, Zr
Examples include nitrides such as N and HfN, semiconductors such as Si and Ge, and carbon. The electrical resistance of an ultrathin film made of the above materials generally has a negative temperature coefficient, and the resistance increases as the temperature decreases. As the conductive thin film of the surface conduction electron-emitting device according to the present invention, a thin film having a negative temperature coefficient particularly with respect to resistance is used, and the reason will be described later.

The fine particle film is a film in which a plurality of fine particles are gathered, and has a fine structure not only in a state in which the fine particles are individually dispersed and arranged, but also in a state in which the fine particles are adjacent to each other or overlap each other (island shape). ). In the case of a fine particle film, the particle size of the fine particles is preferably from several to several thousand, particularly preferably from 10 to 200.

The electron emitting portion 2 contains a crack, and the electron emission is performed from the vicinity of the crack. The electron-emitting portion 2 including the crack and the crack itself are formed depending on the thickness, the film quality, the material of the conductive thin film 3 and the manufacturing method such as forming conditions described later. Therefore, the position and shape of the electron-emitting portion 2 are not limited to the position and shape as shown in FIG.

[0038] The crack may have conductive fine particles having a particle size of several to several hundreds of mm. The conductive fine particles are similar to some or all of the elements of the material constituting the conductive thin film 3. Further, the electron emitting portion 2 including the crack and the conductive thin film 3 in the vicinity thereof may include carbon and a carbon compound.

Next, the basic structure of the vertical surface conduction electron-emitting device will be described.

FIG. 2 is a view showing a basic structure of a vertical surface conduction electron-emitting device. In FIG. 2, reference numeral 21 denotes a step forming member, and the same reference numerals as those in FIG. 1 denote the same members.

The substrate 1, the electron-emitting portion 2, the conductive thin film 3, and the device electrodes 4 and 5 are made of the same material as the above-mentioned flat surface-conduction type electron-emitting device.

The step forming member 21 is formed by, for example, a vacuum evaporation method,
It is made of an insulating material such as SiO ₂ provided by a printing method, a sputtering method or the like. The thickness of the step forming member 21 corresponds to the element electrode interval L (see FIG. 1) of the flat surface conduction electron-emitting device described above. The distance is set by the voltage applied between the electrodes 5 and the electric field strength capable of emitting electrons, but is preferably several hundreds to several tens μm, and particularly preferably several hundreds to
It is several μm.

Since the conductive thin film 3 is usually formed after the formation of the device electrodes 4 and 5, the conductive thin film 3 is laminated on the device electrodes 4 and 5. It is also possible to form such that the device electrodes 4 and 5 are laminated on the conductive thin film 3. Further, as described in the description of the planar surface conduction electron-emitting device, the formation of the electron-emitting portion 2 depends on the manufacturing method such as the film thickness, film quality, material, and forming conditions of the conductive thin film 3 described later. , The position and shape are not limited to the position and shape as shown in FIG.

The following description will be made of the above-mentioned planar type surface conduction electron-emitting device and the vertical surface conduction type electron-emitting device.
The plane type will be described as an example, but may be a vertical type.

Various methods can be considered as a method of manufacturing the basic structure of the surface conduction electron-emitting device. One example will be described with reference to the manufacturing process diagram of FIG. Steps a to c shown below correspond to (a) to (c) in FIG.

Step a: After sufficiently washing the substrate 1 with a detergent, pure water and an organic solvent, depositing an element electrode material by a vacuum evaporation method, a sputtering method, or the like, and then depositing the material on the surface of the substrate 1 by a photolithography technique. Device electrodes 4 and 5 are formed.

Step b: An organic metal solution is applied on the substrate 1 provided with the device electrodes 4 and 5 and left to stand, so that the device electrode 4 and the device electrode 5 are connected to form an organic metal thin film. The organic metal solution is a solution of an organic compound containing a metal as a constituent element of the conductive thin film 3 as a main element. Thereafter, the organic metal thin film is heated and baked to form a conductive thin film 3 patterned by lift-off, etching, or the like.

Here, the description has been made with reference to the application method of the organic metal solution. However, the invention is not limited thereto. For example, a vacuum evaporation method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method, a spinner method, etc. Can form an organometallic film.

Step c: Subsequently, an energization process called forming is performed. When power is applied between the device electrodes 4 and 5 from a power supply (not shown), an electron-emitting portion 2 having a changed structure is formed at the portion of the conductive thin film 3. The conductive thin film 3 is locally destroyed, deformed or deteriorated by this energization process, and the portion where the structure is changed is the electron emitting portion 2.

FIG. 4 shows an example of a forming voltage waveform.

The voltage waveform is particularly preferably a pulse waveform.
There are a case where a voltage pulse having a pulse crest value as a constant voltage is continuously applied (FIG. 4A) and a case where a voltage pulse is applied while increasing the pulse crest value (FIG. 4B).

First, the case where the pulse peak value is a constant voltage will be described. T1 and T2 in FIG. 4A are the pulse width and pulse interval of the voltage waveform. For example, T1 is 1 μsec to 10 msec, T2 is 10 μsec to 100 msec,
The peak value (peak voltage at the time of forming) is appropriately selected according to the form of the above-mentioned surface conduction electron-emitting device, and under a suitable vacuum degree, for example, a vacuum atmosphere of about 1 × 10 ⁻⁵ Torr, Apply for a few seconds to tens of minutes. Note that the voltage waveform to be applied is not limited to the illustrated triangular wave, and a desired waveform such as a rectangular wave can be used.

Next, a case where a voltage pulse is applied while increasing the pulse peak value will be described. T1 and T2 in FIG. 4B are the same as those in FIG. 4A, and the peak value (peak voltage at the time of forming) is increased by, for example, about 0.1 V steps. Is applied under an appropriate vacuum atmosphere as described in the above.

Note that, during the pulse interval T2, the conductive thin film 3
(See FIGS. 1 and 2) The element current was measured at a voltage that does not locally destroy, deform, or alter the element, for example, a voltage of about 0.1 V, and the resistance was obtained. For example, a resistance of 1 M ohm or more was shown. Sometimes the forming ends.

Basically, the surface conduction electron-emitting device according to the present invention can be obtained by the above steps a to c, but it is preferable to further perform an activation step.

The activation step is, for example, 10 ^-4 to 10 ^-5 T
Similar to the description of the forming process, a process of repeating application of a pulse with a pulse peak value of a constant voltage at a degree of vacuum of about orr, and converts carbon and carbon compounds from organic substances existing in a vacuum atmosphere into electrons. This is a step in which the state of the device current and the emission current can be significantly improved by depositing the light on the emission portion 2 (see FIGS. 1 and 2). This activation step is preferably performed while measuring, for example, the device current and the emission current, and is completed when, for example, the emission current is saturated, since it is effective and is preferable. In addition, the pulse peak value in the activation step is preferably a peak value of a driving voltage applied when driving the element.

The above-mentioned carbon and carbon compound are graphite (indicating both single crystal and polycrystal) and amorphous carbon (indicating amorphous carbon and a mixture thereof with polycrystalline graphite). Further, the deposited film thickness is preferably 500 ° or less, more preferably 300 ° or less.

The basic characteristics of the surface conduction electron-emitting device thus obtained will be described below.

FIG. 5 is a schematic diagram showing an example of a measurement evaluation system for measuring the electron emission characteristics of the surface conduction electron-emitting device. First, this measurement evaluation system will be described.

In FIG. 5, the same symbols as those in FIG. 1 denote the same members. Reference numeral 51 denotes a power supply for applying a device voltage Vf to the device; 50, an ammeter for measuring a device current If flowing through the conductive thin film 3 between the device electrodes 4 and 5; An anode electrode for capturing the emission current Ie to be emitted, 53 is a high voltage power supply for applying a voltage to the anode electrode 54, and 52 is for measuring the emission current Ie emitted from the electron emission portion 5. An ammeter, 55 is a vacuum device, and 56 is an exhaust pump.

The surface conduction electron-emitting device and the anode electrode 54 are installed in a vacuum device 55. The vacuum device 55 is equipped with necessary equipment such as a vacuum gauge (not shown) and is operated under a desired vacuum. This allows measurement and evaluation of surface conduction electron-emitting devices.

The exhaust pump 56 is composed of a normal high vacuum system such as a turbo pump and a rotary pump, and an ultrahigh vacuum system such as an ion pump.
The entire vacuum device 55 and the substrate 1 of the surface conduction electron-emitting device can be heated to about 200 ° C. by a heater. In this measurement and evaluation system, the display panel and the inside thereof are connected to a vacuum device 55 at the stage of assembling a display panel (see 201 in FIG. 8) described later.
And by configuring it as an interior thereof, it can be applied to measurement evaluation and processing in the above-described forming step and activation step.

The basic characteristics of the surface conduction type electron-emitting device described below are as follows. The voltage of the anode electrode 54 of the above-mentioned measurement and evaluation system is 1 kV to 10 kV, and the distance H between the anode electrode 54 and the surface conduction type electron-emitting device. Is usually set to 2 mm to 8 mm.

First, the emission current Ie and the device current If,
FIG. 6 (a solid line in the figure) shows a typical example of the relationship between the element voltages Vf.
Shown in In FIG. 6, the emission current Ie is the device current Ie.
Since it is significantly smaller than f, it is shown in arbitrary units.

As apparent from FIG. 6, the surface conduction electron-emitting device has the following three characteristic characteristics with respect to the emission current Ie.

First, when a device voltage Vf higher than a certain voltage (referred to as a threshold voltage: Vth in FIG. 6) is applied to the surface conduction electron-emitting device, the emission current Ie sharply increases. Below the threshold voltage Vth, the emission current Ie is hardly detected. That is, it is a nonlinear element having a clear threshold voltage Vth with respect to the emission current Ie.

Second, since the emission current Ie has a characteristic (referred to as MI characteristic) that monotonically increases with respect to the device voltage Vf, the emission current Ie can be controlled by the device voltage Vf.

Thirdly, the amount of charge emitted by the anode electrode 54 (see FIG. 5) depends on the time during which the device voltage Vf is applied. That is, the amount of charge captured by the anode electrode 54 can be controlled by the time during which the device voltage Vf is applied.

The characteristic shown by the solid line in FIG.
Has the MI characteristic with respect to the element voltage Vf, and the element current If also has the MI characteristic with respect to the element voltage Vf. However, as shown by a broken line in FIG. On the other hand, a voltage control type negative resistance characteristic (referred to as VCNR characteristic) may be exhibited. Which property is shown
It depends on the manufacturing method of the element and the measurement conditions at the time of measurement. However,
Even if the device current If has a VCNR characteristic with respect to the device voltage Vf, the emission current Ie is M with respect to the device voltage Vf.
It has an I characteristic.

Because of the characteristic characteristics of the surface conduction electron-emitting device described above, even in an electron source or an image forming apparatus in which a plurality of devices are arranged, the amount of emitted electrons can be easily controlled according to an input signal. And can be applied to various fields.

Next, an electron source having a large number of the above-mentioned surface conduction electron-emitting devices, which are the main object of the present invention, and an image forming apparatus using the electron source will be described in detail.

First, the arrangement of the surface conduction electron-emitting devices in the electron source of the present invention will be described.

The arrangement of the surface conduction electron-emitting devices in the electron source of the present invention is not limited to a ladder arrangement as described in the section of the prior art, but also to the arrangement of N Y-directions on M X-direction wirings. An arrangement method in which directional wiring is provided via an interlayer insulating layer, and an X-directional wiring and a Y-directional wiring are connected to a pair of device electrodes of a surface conduction electron-emitting device, respectively. This is hereinafter referred to as a simple matrix arrangement. First, the simple matrix arrangement will be described in detail.

According to the above-described basic characteristics of the surface conduction electron-emitting device, when the applied device voltage Vf exceeds the threshold voltage Vth, the electron is expressed by the peak value and pulse width of the applied pulsed voltage. The amount of release can be controlled. On the other hand, below the threshold voltage Vth, almost no electrons are emitted. Therefore, even when a large number of surface conduction electron-emitting devices are arranged, it becomes possible to apply a pulse-like voltage controlled in accordance with an input signal with only a simple matrix wiring and to select individual devices to be driven independently. .

The simple matrix arrangement is based on the above principle, and the configuration of an electron source having a simple matrix arrangement, which is an example of the electron source of the present invention, will be further described with reference to FIG.

In FIG. 7, the substrate 1 is a glass plate or the like as described above, and the number and shape of the surface conduction electron-emitting devices 104 arranged on the substrate 1 are appropriately set according to the application. It is.

Each of the M X-directional wirings 102 has external terminals DX1, DX2,.
A conductive metal formed by a vacuum deposition method, a printing method, a sputtering method, or the like is provided thereon. In addition, the material and the material are so set that the voltage is supplied to the many surface conduction electron-emitting devices 104 almost uniformly.
The film thickness and the wiring width are set.

Each of the N Y-direction wirings 103 has external terminals DY1, DY2,... DYN, and is formed in the same manner as the X-direction wiring 102.

The M X-directional wires 102 and the N Y wires
An interlayer insulating layer (not shown) is provided between the direction wirings 103, and is electrically separated to form a matrix wiring. Note that both M and N are positive integers.

The interlayer insulating layer (not shown) is, for example, SiO ₂ formed by a vacuum deposition method, a printing method, a sputtering method, or the like, and has a desired shape on the entire surface or a part of the substrate 1 on which the X-directional wiring 102 is formed. In particular, the film thickness, material, and manufacturing method are appropriately set so as to withstand the potential difference at the intersection of the X-direction wiring 102 and the Y-direction wiring 103. Further, the X-direction wiring 102 and the Y-direction wiring 103 are led out as external terminals.

Further, the device electrodes (not shown) facing the surface conduction electron-emitting device 104 are provided with M X-direction wirings 102.
, N Y-directional wirings 103, a vacuum deposition method, a printing method,
Connection 1 made of conductive metal or the like formed by sputtering or the like
05 are electrically connected.

Here, the M X-directional wires 102, the N Y-directional wires 103, the connection 105, and the opposing element electrodes may have the same or some of the constituent elements that are the same. Further, they may be different from each other, and are appropriately selected from the above-described materials of the device electrodes and the like. The wires to these device electrodes may be collectively referred to as device electrodes when the material is the same as the device electrodes. The surface conduction electron-emitting device 104 may be formed on either the substrate 1 or an interlayer insulating layer (not shown). In particular, in the present invention, a material having a positive temperature coefficient with respect to electric resistance, such as a general metal material, is used as the wiring material.

As will be described later in detail, a scanning signal is applied to the X-direction wiring 102 in order to scan a row of the surface conduction electron-emitting devices 104 arranged in the X-direction in accordance with an input signal. A scanning signal applying unit (not shown) is electrically connected.

On the other hand, a modulation signal (not shown) for applying a modulation signal is applied to the Y-direction wiring 103 in order to modulate each of the rows of the surface conduction electron-emitting devices 104 arranged in the Y direction according to an input signal. The signal applying means is electrically connected. The drive voltage applied to each surface conduction electron-emitting device 104 is supplied as a difference voltage between a scanning signal and a modulation signal applied to the surface conduction electron-emitting device.

The present invention is particularly characterized by the above-described forming step in the process of manufacturing an electron source in which a large number of surface conduction electron-emitting devices are arranged. The source will be explained.

FIG. 20 shows an equivalent circuit of the electron source shown in FIG. In FIG. 20, R is the surface conduction electron-emitting device 10.
Element resistances 4 and r and r 'are wiring resistances of the X-direction and Y-direction wirings per element (pixel), respectively. In this equivalent circuit, a case is considered in which the conventional line forming performed on the ladder-shaped electron sources described above is performed, for example, in the X direction. FIG. 21 is an equivalent circuit schematically shown for explaining the m-th line forming from the grounding portion.

As is clear from FIG. 21, the element resistance R,
When there is no variation in the wiring resistances r and r ', the power supply unit (FIG. 2)
When a voltage is applied to the second terminal DXm), the partial pressure applied to each element always becomes the largest for the element closest to the power supply unit. The element resistance of the formed element is
Since the element resistance R is larger than the element resistance R by two to three digits or more before the forming, when the line forming is performed, the elements are formed sequentially from the element near the power supply side. Then, forming is performed up to the (n-1) -th element, and the equivalent circuit when forming the next n-th element is as shown in FIG. That is, in this state, the n-th element closest to the power supply unit is formed, and the equivalent circuit at the next point in time has a ladder shape with one element less than that in FIG. Assuming that a constant voltage V0 is applied to the power supply unit in a state where forming is performed up to the (n-1) th element, the voltage V (m,
n) is given by the following equation.

V (m, n) = {1−mr ”/ R−n (N−n + 1) r / R｝ V0 (1)

Here, it is assumed that r and r 'are sufficiently smaller than R. Also, when this is represented by power, the power P (m, n) applied to the n-th element is given by the following equation.

[0090] P (m, n) = C {1-2mr '/ R-2n (N-n + 1) r / R} V0 2 C: constant ... (2)

That is, the voltage V and the power P applied to each element are functions of m and n, and are the secondary of the element address n in the line direction of line forming and the one of the element address m in the other direction.
It can be seen that it changes in the following.

The distribution of the voltage V and the power P applied to each of the surface conduction electron-emitting devices of the matrix-wired electron source shown in the equivalent circuit of FIG. FIG. 23 schematically shows based on the expressions (1) and (2).

As shown in FIG. 23, even if a constant voltage is supplied to the power supply unit, the voltage and power applied when the element is formed by the element address differ. This phenomenon becomes more conspicuous as the number of elements increases and the wiring resistances r and r 'become larger than the element resistance R. For the N elements in the X direction which are collectively line-formed, the difference between the maximum and the minimum of the power applied to each element immediately before each element is formed is as follows.

[0094] P (m, 0) -P ( m, N / 2) ≒ CN 2/2 (r / R) V0 2 ··· (3) the formula

The difference between the maximum and the minimum for the M elements in the Y direction is given by the following equation.

P (0, n) −P (M, n) ≒ 2M (r ′ / R) (4)

As can be seen from the above equations (3) and (4),
In particular, when the number of elements in the line forming direction (X direction) increases, a difference in the forming conditions between the elements rapidly appears.

In the above-described example, the power supply unit is arranged in rows (or columns).
In the case where the power supply unit is located at both ends, the power applied immediately before the forming is increased in the elements at both ends and the center of the row (or column) to be formed collectively. It is large, and small in the element in the vicinity of the 1/4 line length from both ends, and also varies depending on the element address. The line forming for the ladder-shaped electron sources is as described in the section of the prior art.

As described above, the state of the electron-emitting portion including the crack formed by the forming changes depending on conditions such as the voltage (power) applied during the forming. Variations occur in the electron emission characteristics between the devices.

Therefore, when performing line forming, in the first aspect of the present invention, the entire electron source is cooled, in the second aspect of the present invention, the wiring portion connecting the surface conduction electron-emitting devices is cooled, and in the third aspect of the present invention, In the fourth embodiment of the present invention, the conductive thin film portion of the surface conduction electron-emitting device is cooled, and the conductive thin film portion of the surface conduction electron-emitting device is cooled.

As described above, since the wiring material has a positive temperature coefficient with respect to the resistance, the resistance becomes smaller than that at normal temperature by cooling. On the other hand, since the conductive thin film of the surface conduction electron-emitting device has a negative temperature coefficient with respect to resistance, the resistance value becomes larger than that at normal temperature by cooling. That is, in any of the first to fourth embodiments of the present invention, the wiring resistances r and r 'are reduced and / or the element resistance R is increased as compared with the case of normal temperature. For this reason, as can be seen from the equations (3) and (4), in the X direction and the Y direction, the variation in power applied to each element immediately before the element is formed can be reduced between the elements. Things.

Next, an example of the image forming apparatus of the present invention using the electron source of the present invention having the above-described simple matrix arrangement will be described with reference to FIGS. 8 is a diagram showing the basic configuration of the display panel 201, FIG. 9 is a view showing the fluorescent film 114, and FIG. 10 is a diagram showing the display panel 201 of FIG.
It is a block diagram which shows an example of the drive circuit for performing television display according to the television signal of SC system.

In FIG. 8, reference numeral 1 denotes an electron source substrate on which the surface conduction electron-emitting devices are arranged as described above, 111 denotes a rear plate to which the substrate 1 is fixed, and 116 denotes a glass substrate.
A fluorescent film 114 serving as an image forming member
And a face play on which a metal back 115 and the like are formed.
And 112, a support frame. The rear plate 111, the support frame 112, and the face plate 116 are sealed by applying frit glass or the like to these joints and firing at 400 to 500 ° C. for 10 minutes or more in the air or a nitrogen atmosphere. To form an envelope 118.

In FIG. 8, reference numerals 102 and 103 denote an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes 4 and 5 (see FIGS. 1 and 2) of the surface conduction electron-emitting device 104. DX1 to DXM, DY1 to D
YN.

The envelope 118 includes the face plate 116, the support frame 112, and the rear plate 111, as described above. However, the rear plate 111 is provided mainly for the purpose of reinforcing the strength of the substrate 1, and if the substrate 1 itself has sufficient strength, the rear plate 1
11 is unnecessary, and the support frame 112 may be directly sealed to the substrate 1, and the envelope 118 may be constituted by the face plate 116, the support frame 112, and the substrate 1. Further, by further providing a support (not shown) called a spacer between the face plate 116 and the rear plate 111, the envelope 118 having sufficient strength against atmospheric pressure can be obtained.

The fluorescent film 114 is composed of only the phosphor 122 in the case of a monochrome, but is composed of the phosphor 1 in the case of a color.
Black stripes (FIG. 9A)
Alternatively, it is composed of a black conductive material 121 called a black matrix (FIG. 9B) and the like, and a phosphor 122.
The purpose of providing the black stripes and the black matrix is to provide the three primary color phosphors 12 necessary for color display.
The purpose is to make the color mixture or the like inconspicuous by making the painted portion between the two black, and to suppress a decrease in contrast due to reflection of external light on the fluorescent film 114. Black conductive material 12
As the first material, not only a material mainly containing graphite, which is generally used, but also other materials can be used as long as they are conductive and have little light transmission and reflection.

As a method of applying the phosphor 122 to the glass substrate 113, a precipitation method or a printing method is used regardless of monochrome or color.

Further, as shown in FIG.
A metal back 115 is usually provided on the inner surface side of 4.
The purpose of the metal back 115 is to reduce the light emitted from the phosphor 122 (see FIG.
Improving the brightness by specular reflection to the 6th side, acting as an electrode for applying an electron beam accelerating voltage from the high voltage terminal Hv, and damaging by the collision of negative ions generated in the envelope 118. Protection of the phosphor 122 from the laser beam. The metal back 115 can be manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film 114 after the fluorescent film 114 is manufactured, and then depositing Al by vacuum evaporation or the like.

In the face plate 116, a transparent electrode (not shown) may be provided on the outer surface side of the fluorescent film 114 in order to further enhance the conductivity of the fluorescent film 114.

When the above-mentioned sealing is performed, in the case of color, the phosphors 122 of each color must correspond to the surface-conduction electron-emitting devices 104, so that it is necessary to perform sufficient alignment.

The inside of the envelope 118 is evacuated to a degree of vacuum of about 10 ⁻⁶ Torr through an exhaust pipe (not shown) and sealed.
In addition, getter processing may be performed immediately before or after sealing the envelope 118. This is to heat a getter (not shown) disposed at a predetermined position in the envelope 118 by a heating method such as resistance heating or high-frequency heating.
This is a process for forming a deposition film. The getter is usually composed mainly of Ba or the like.
^{This is} for maintaining a degree of vacuum of ^-5 to 10 ^-7 Torr.

Note that the above-described forming step and activation step are usually performed immediately before or after sealing of the envelope 118. The line forming is performed by applying a voltage between the device electrodes 4 and 5 of the plurality of surface conduction electron-emitting devices 104 on one line through the external terminals DX1 to DXM and DY1 to DYN.

The display panel 201 described above is, for example, shown in FIG.
Can be driven by a driving circuit as shown in FIG.
In FIG. 10, reference numeral 201 denotes the display panel;
202 is a scanning circuit, 203 is a control circuit, 204 is a shift register, 205 is a line memory, 206 is a synchronization signal separation circuit, 207 is a modulation signal generator, and Vx and Va are DC voltage sources.

As shown in FIG. 10, the display panel 20
1 is connected to an external electric circuit via external terminals DX1 to DXM, external terminals DY1 to DYN, and a high voltage terminal Hv. Of these, the external terminals DX1 to DX1
XM includes surface conduction electron-emitting devices provided in the display panel 201, that is, a group of surface conduction electron-emitting devices arranged in a matrix of M rows and N columns, one row at a time (N elements). A scanning signal for driving is applied.

On the other hand, the external terminals DY1 to DYN
A modulation signal for controlling an output electron beam of each element in one row selected by the scanning signal is applied. The high voltage terminal Hv is connected to a DC voltage source Va at, for example, 10 kV.
Is supplied. This is an accelerating voltage for applying sufficient energy to the electron beam output from the surface conduction electron-emitting device to excite the phosphor.

The scanning circuit 202 has M switching elements therein (schematically indicated by S1 to SM in FIG. 10).
Each of the switching elements S1 to SM selects either the output voltage of the DC voltage source Vx or 0 V (ground level) and is electrically connected to the external terminals DX1 to DXM of the display panel 201. Things. Each of the switching elements S1 to SM includes a control circuit 203.
Operates on the basis of the control signal Tscan output by the device, and in fact, it can be easily configured by combining elements having a switching function such as an FET, for example.

In the present embodiment, the DC voltage source Vx has a threshold driving voltage applied to the unscanned surface conduction electron-emitting device based on the characteristics (threshold voltage) of the surface conduction electron-emitting device. It is set to output a constant voltage that is equal to or lower than the value voltage.

The control circuit 203 has a function of matching the operations of the respective units so that appropriate display is performed based on an image signal input from the outside. A synchronization signal Tsyn sent from a synchronization signal separation circuit 206 described below.
Based on c, each control signal of Tscan, Tsft, and Tmry is generated for each unit.

The synchronizing signal separating circuit 206 is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC system television signal input from the outside. ) With the circuit,
It can be easily configured. Sync signal separation circuit 206
The sync signal separated by is composed of a vertical sync signal and a horizontal sync signal, as is well known. Here, it is illustrated as Tsync for convenience of explanation. On the other hand, the luminance signal component of the image separated from the television signal is referred to as D for convenience.
This is illustrated as an ATA signal. This DATA signal is input to the shift register 204.

The shift register 204 is for serially / parallel-converting the DATA signal serially input in time series for each line of an image, and is based on a control signal Tsft sent from the control circuit 203. Operate. This control signal Tsft is supplied to the shift register 20
4 may be rephrased as the shift clock. Also,
One line of serial / parallel converted image (equivalent to drive data for N elements of surface conduction electron-emitting device)
Are output from the shift register 204 as N parallel signals Id1 to IdN.

The line memory 205 is a storage device for storing data for one line of an image for a required time, and stores the contents of Id1 to IdN as appropriate according to a control signal Tmry sent from the control circuit 203. The stored contents are output as I'd1 to I'dN and input to the modulation signal generator 207.

A modulation signal generator 207 is a signal line for appropriately driving and modulating each of the surface conduction electron-emitting devices in accordance with each of the image data I'd1 to I'dN.
The output signal is applied to the surface conduction electron-emitting devices in the display panel 201 through the external terminals DY1 to DYN.

As described above, the surface conduction electron-emitting device has a distinct threshold voltage for electron emission, and electron emission occurs only when a voltage exceeding the threshold voltage is applied. For voltages exceeding the threshold voltage,
The emission current also changes according to the change in the voltage applied to the surface conduction electron-emitting device. By changing a part of the material, configuration, and manufacturing method of the surface conduction electron-emitting device, the value of the threshold voltage or the degree of change of the emission current with respect to the applied voltage may be changed. You can say something like

That is, when a pulsed voltage is applied to the surface conduction electron-emitting device, for example, even if a voltage lower than the threshold voltage is applied, electron emission does not occur, but a voltage exceeding the threshold voltage is applied. In this case, electron emission occurs. At that time, first, it is possible to control the intensity of the output electron beam by changing the peak value of the voltage pulse. Second, by changing the width of the voltage pulse, it is possible to control the total amount of charges of the output electron beam.

Therefore, as a method of modulating the surface conduction electron-emitting device according to an input signal, there are a voltage modulation method and a pulse width modulation method. In the case of performing the voltage modulation method, the modulation signal generator 207 generates a voltage pulse having a fixed length, and uses a voltage modulation circuit capable of appropriately modulating the pulse peak value according to input data. In the case of performing the pulse width modulation method, the modulation signal generator 207 generates a voltage pulse having a constant peak value, but a pulse width modulation method circuit capable of appropriately modulating the pulse width according to input data. Used.

The shift register 204 and the line memory 20
Reference numeral 5 may be a digital signal type or an analog signal type, as long as it can perform serial / parallel conversion and storage of an image signal at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the synchronization signal separating circuit 206 into a digital signal. This can be achieved by providing an A / D converter at the output of the synchronization signal separation circuit 206.

In connection with this, the line memory 20
Depending on whether the output signal of 5 is a digital signal or an analog signal,
The circuit provided in modulation signal generator 207 is slightly different.

That is, in the case of a voltage modulation method using a digital signal, a well-known D / A conversion circuit may be used as the modulation signal generator 207, and an amplification circuit or the like may be added as necessary. In the case of a pulse width modulation method using a digital signal, the modulation signal generator 207 includes, for example, a high-speed oscillator, a counter (counter) for counting the number of waves output from the oscillator, and an output value of the counter and an output value of the memory. It can be easily configured by using a circuit in which comparators for comparison are combined. Further, if necessary, an amplifier may be added for amplifying the voltage of the pulse-width-modulated signal output from the comparator to the drive voltage of the surface-conduction electron-emitting device.

On the other hand, in the case of a voltage modulation method using an analog signal, for example, an amplification circuit using a well-known operational amplifier or the like may be used as the modulation signal generator 207, and a level shift circuit or the like may be added as necessary. You may. In the case of a pulse width modulation method using an analog signal, for example, a well-known voltage-controlled oscillation circuit (VCO) may be used, and a voltage is amplified to a drive voltage of a surface conduction electron-emitting device as necessary. May be added.

The image forming apparatus of the present invention having the display panel 201 and the driving circuit as described above has the external terminals DX1 to DX1.
By applying a voltage from the DXM and DY1 to DYN, electrons can be emitted from any electron-emitting device 104, and a high voltage is applied to the metal back 115 or the transparent electrode (not shown) through the high voltage terminal Hv to apply electrons. Bee
A television display can be performed according to an NTSC television signal by excitation / emission generated by accelerating the system and causing the accelerated electron beam to collide with the fluorescent film 114.

The configuration described above is a schematic configuration necessary for obtaining the image forming apparatus of the present invention used for display and the like. For example, detailed portions such as materials of each member are limited to those described above. Instead, it is appropriately selected so as to be suitable for the use of the image forming apparatus. Although the NTSC system has been described as an example of the input signal, the image forming apparatus of the present invention is not limited to this, and may employ another system such as a PAL or SECAM system. For example, a high-definition TV system such as a MUSE system may be used.

Next, an example of the above-described trapezoidal electron source and an image forming apparatus of the present invention using the same will be described with reference to FIGS. 11 and 12. FIG.

In FIG. 11, reference numeral 1 denotes a substrate; 104, a surface conduction electron-emitting device; and 304, common wirings for connecting the surface conduction electron-emitting devices 104, each of which has ten external terminals D1 to D10. doing. A plurality of surface conduction electron-emitting devices 104 are arranged in parallel on the substrate 1. This is called an element row. These element rows are arranged in a plurality of rows to constitute an electron source.

By applying an appropriate drive voltage between the common wiring 304 of each element row (for example, the common wiring 304 of the external terminals D1 and D2), each element row can be driven independently. That is, a voltage exceeding the threshold voltage may be applied to an element row where electron beams are to be emitted, and a voltage lower than the threshold voltage may be applied to an element row where electron beams are not desired to be emitted. Such a drive voltage is applied to the common lines D2 to D9 located between the element rows, and the common lines 304 adjacent to each other, that is, the external terminals D adjacent to each other.
2 and D3, D4 and D5, D6 and D7, and D8 and D9 can be formed as a single common wiring.

FIG. 12 is a diagram showing the structure of a display panel 301 provided with the above-mentioned trapezoidal arrangement of electron sources.

In FIG. 12, reference numeral 302 denotes a grid electrode,
Reference numeral 303 denotes an opening through which electrons pass, D1 to Dm denote external terminals for applying a voltage to each surface conduction electron-emitting device, and G1 to Gn denote terminals connected to the grid electrode 302. Further, the common wiring 304 between each element row is formed on the substrate 1 as an integral same wiring.

In FIG. 12, the same reference numerals as those in FIG. 8 denote the same members, and the main difference between the display panel 201 using the electron sources in the simple matrix arrangement shown in FIG. The point is that a grid electrode 302 is provided between the electrodes 116.

The grid electrode 302 is provided between the substrate 1 and the face plate 116 as described above. The grid electrode 302 is capable of modulating an electron beam emitted from the surface conduction electron-emitting device 104. The grid electrode 302 applies the electron beam to a stripe-shaped electrode provided orthogonally to the ladder-shaped element rows. In order to pass
A circular opening 303 is provided one by one corresponding to each surface conduction electron-emitting device 104.

The shape and arrangement position of the grid electrode 302
It does not necessarily have to be as shown in FIG. 12, and a large number of openings 303 may be provided in a mesh shape.
4 may be provided around or in the vicinity.

The external terminals D1 to Dm and G1 to Gn are connected to a drive circuit (not shown). A modulation signal for one line of an image is applied to the column of the grid electrode 302 in synchronization with the sequential driving (scanning) of the element rows one by one, so that each electron beam is applied to the fluorescent film 114. The irradiation can be controlled and the image can be displayed line by line.

As described above, the image forming apparatus of the present invention
It can be obtained by using any of the electron sources of the present invention in a simple matrix arrangement or a trapezoidal arrangement, and is suitable not only for the above-described television broadcast display device, but also as a video conference system and a display device such as a computer. A device is obtained. Further, it can be used as an exposure device of an optical printer including a photosensitive drum and the like.

[0143]

The present invention will be further described with reference to the following examples.

[Embodiment 1] In this embodiment, an image forming apparatus as shown in FIG. 8 is formed by using an electron source as shown in FIG. 7 in which a large number of surface conduction electron-emitting devices are arranged in a simple matrix. An example of fabrication will be described.

FIG. 13 is a plan view of a part of the electron source. FIG. 14 is a sectional view taken along the line AA ′ in the figure. However, the same reference numerals in FIGS. 7, 8, 13 and 14 denote the same members.

Here, 1 is a substrate, 102 is an X-direction wiring (also called a lower wiring), 103 is a Y-direction wiring (also called an upper wiring), 3 is a conductive thin film, 4 and 5 are device electrodes, and 401
And 402, a contact hole for electrical connection between the element electrode 4 and the lower wiring 102.

First, a method of manufacturing an electron source will be specifically described with reference to FIGS. In addition, the following steps a to
h corresponds to (a) to (h) of FIG.

Step a: A 50 .mu.m thick Cr film and a 6 mm thick film were formed on a substrate 1 having a 0.5 .mu.m thick silicon oxide film formed on a cleaned blue plate glass by sputtering.
000 of Au is sequentially laminated, and then the photoresist (AZ
1370 Hoechst Co.) is spin-coated and baked with a spinner, and the photomask image is exposed and developed to form a resist pattern for the lower wiring 102, and the Au / Cr deposited film is wet-etched to obtain a desired pattern. Wiring 1 of shape
02 was formed.

Step b: Next, an interlayer insulating layer 401 made of a silicon oxide film having a thickness of 1.0 μm was deposited by RF sputtering.

Step c: A photoresist pattern for forming the contact hole 402 is formed on the silicon oxide film deposited in the step b, and the photoresist pattern is used as a mask to form a photoresist pattern.
1 was etched to form a contact hole 402. Etching using CF ₄ and H ₂ gas RIE (R
active Ion Etching) method.

Step d: Thereafter, a pattern to be a gap G between the device electrodes 4 and 5 and the device electrode is formed by a photoresist (R
D-2000N-41, manufactured by Hitachi Chemical Co., Ltd.), and a vacuum evaporation method is used to form a 50-mm thick Ti and a 1000-mm thick N.
i were sequentially deposited. The photoresist pattern was dissolved in an organic solvent, and the Ni / Ti deposited film was lifted off to form device electrodes 4 and 5 having a device electrode interval L of 3 μm and a width W1 of 300 μm.

Step e: Upper wiring 10 on device electrodes 4 and 5
After a photoresist pattern of No. 3 was formed, Ti with a thickness of 50 ° and Au with a thickness of 5000 ° were sequentially deposited by vacuum evaporation, and unnecessary portions were removed by lift-off to form an upper wiring 103 having a desired shape. .

Step f: FIG. 16 shows a part of a plan view of a mask of the conductive thin film 3 involved in this step. This is a mask having a gap L between device electrodes and an opening in the vicinity thereof. A Cr film 403 having a thickness of 1000 堆積 is deposited and patterned by vacuum deposition using the mask, and an organic P is formed thereon.
d (Ccp-4230, manufactured by Okuno Pharmaceutical Co., Ltd.) was spin-coated and heated and baked at 300 ° C. for 10 minutes. The thickness of the conductive thin film 3 formed of fine particles of Pd as the main element thus formed was 100 °.

Step g: Cr film 403 by lift-off method
To remove the conductive thin film 3 having a desired pattern shape.
Was formed.

Step h: A resist was applied to the entire surface, exposed and developed using a mask, and the resist was removed only in the contact hole 402. Thereafter, by vacuum evaporation, Ti with a thickness of 50 ° and Au with a thickness of 5000 ° are sequentially deposited.
Unnecessary portions were removed by lift-off to bury the contact holes 402.

According to the above steps, the lower wiring 10 is formed on the substrate 1.
2, interlayer insulating layer 401, upper wiring 103, element electrode 4,
5. The conductive thin film 3 and the like were formed to obtain an unformed electron source.

An image forming apparatus was manufactured by using the unformed electron source obtained as described above. The manufacturing procedure will be described below with reference to FIGS.

First, after fixing the substrate 1 of the unformed electron source to the rear plate 111, a face plate 116 (an image forming member is formed on the inner surface of the glass substrate 113) 5 mm above the substrate 1. The phosphor film 114 and the metal back 115 are formed.)
And the face plate 116 and the support frame 11
2. A frit glass was applied to the bonded portion of the rear plate 111, and baked at 400 ° C. to 500 ° C. in the air for 10 minutes or more to seal. The fixing of the substrate 1 to the rear plate 111 was also performed using frit glass.

Fluorescent film 114 serving as an image forming member
Is made of only a phosphor in the case of a monochrome, but in this embodiment, the phosphor adopts a stripe shape (see FIG. 9A), and a black stripe is formed first with the black conductive material 121, and Each color phosphor 12 is formed in the gap by the slurry method.
2 was applied to form a fluorescent film 114. Black conductive material 12
As 1, a commonly used material mainly composed of graphite was used.

In addition, a metal back 115 was provided on the inner surface side of the fluorescent film 114. The metal back 115 is the fluorescent film 1
After the fabrication of 14, a smoothing process (usually called filming) of the inner surface of the fluorescent film 114 is performed, and then A
1 was produced by vacuum evaporation.

In the face plate 116, a transparent electrode may be provided on the outer surface side of the fluorescent film 114 in order to further increase the conductivity of the fluorescent film 114, but in this embodiment, only the metal back 115 is provided. Omitted because sufficient conductivity was obtained.

At the time of performing the above-mentioned sealing, in the case of color, since the phosphors 122 of each color must correspond to the surface conduction electron-emitting devices 104, sufficient alignment was performed.

In this embodiment, the number of elements (pixels) is 500.
× 500 were produced. The element resistance R of each surface conduction electron-emitting device was about 1 kΩ, and the resistance r of the lower wiring 102 and the resistance r ′ of the upper wiring 103 per element were both 0.01 Ω.

Two display panels 201 produced as described above were prepared, and forming was performed by two different methods including the comparative example described below.

(Forming Method 1: Cooling) The atmosphere in the display panel 201 is evacuated by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the external terminal DX
An external scan circuit and a voltage source were connected so that 1 to DXM sequentially became a power supply unit, and DY1 to DYN were grounded. Here, as shown in FIG. 17, the container 501 containing liquid nitrogen was brought into contact with the rear plate 111, and the entire display panel 201 was sufficiently cooled.

In this embodiment, the cooling causes the wiring resistances r and r 'per element to be 0.004Ω and the element resistance R to be 10
kΩ.

In this state, the external terminals DX1 to DX1
M and a forming waveform were applied through DY1 to DYN to sequentially perform line forming. As the forming waveform, the voltage waveform shown in FIG. 4A was used, T1 was 1 ms, T2 was 10 ms, and the peak value (peak voltage value) of the triangular wave was 9.8 V.

(Forming Method 2: Comparative Example) The atmosphere inside the display panel 201 was evacuated by a vacuum pump through an exhaust pipe (not shown), and after a sufficient degree of vacuum was reached.
An external scan circuit and a voltage source were connected so that X1 to DXM sequentially became a power supply unit, and DY1 to DYN were grounded. Thereafter, at room temperature (25 ° C.), a forming waveform was applied through the external terminals DX1 to DXM and DY1 to DYN, and line forming was performed sequentially. still,
As the forming waveform, the voltage waveform shown in FIG. 4A was used, T1 was 1 ms, T2 was 10 ms, and the peak value (peak voltage value) of the triangular wave was 9.3V.

Next, each of the two display panels subjected to the two different forming methods is evacuated to a degree of vacuum of about 10 ^−6.5 Torr through an exhaust pipe (not shown), and the exhaust pipe is heated by a gas burner. Thus, the panel was sealed. Finally, gettering was performed by a high-frequency heating method in order to maintain the degree of vacuum after sealing. The getter contained Ba as a main component.

In the two display panels 201 (see FIG. 8) completed as described above, the scanning signal and the modulation signal are respectively transmitted through the external terminals DX1 to DXM and DY1 to DYN by signal generating means (not shown). Electrons are emitted by applying the voltage to the conduction electron-emitting device 104, and a high voltage of several kV or more is applied to the metal back 115 through the high voltage terminal Hv to accelerate the electron beam and collide with the fluorescent film 114 to excite the electron beam. -An image was displayed by emitting light. When a constant voltage was applied to each surface conduction electron-emitting device so that the entire surface had a uniform brightness, the result was as shown in FIG. That is, in the case of the forming method 1 according to the present invention, the brightness unevenness in the entire screen is extremely small, whereas in the case of the forming method 2 as the comparative example, the brightness near the outer edge 3 sides of the screen is high, and It was dark near.

As described above, by cooling the entire electron source and performing line forming, it is possible to reduce the variation in the electron emission characteristics among the surface conduction electron-emitting devices, and to obtain an extremely good image without image unevenness. Was.

In this embodiment, the entire apparatus is cooled using liquid nitrogen. However, in the present invention, it is important to cool the surface conduction electron-emitting device (particularly, the conductive thin film portion) and the wiring portion. For example, the device may be cooled by cooling the atmosphere around the device with a refrigerator or the like. Further, for example, a pipe having a connection with a cooling device may be circulated in the apparatus, and a cooling material may be circulated in the pipe to directly cool the surface conduction electron-emitting device and the wiring portion. Further, depending on the material of the surface conduction electron-emitting device and the wiring, water cooling may be used.

[Embodiment 2] In this embodiment, an example will be described in which a large number of surface conduction electron-emitting devices are arranged in a one-dimensional line to produce a trapezoidal arrangement of electron sources.

First, as shown in FIG. 19, a pattern of a large number of device electrodes 4 and 5 was formed on a substrate 1 made of quartz glass, and a conductive thin film 3 was formed therebetween. The materials and forming methods of the device electrodes 4 and 5 and the conductive thin film 3 are the same as in the first embodiment.

The number of elements in this embodiment is 500, and the element electrodes 4 and 5 of these elements are wired in a line shape (not shown), and a power supply portion and a ground portion are provided at both ends of the line. Provided. The equivalent circuit is shown in FIG.

The thus formed unformed electron source was set in a measurement evaluation system as shown in FIG.
In this embodiment, a phosphor target having the configuration of the face plate 116 shown in FIG. 8 is arranged instead of the anode electrode 54 shown in FIG.

In this measurement and evaluation system, after the inside of the vacuum device 55 was evacuated to 10 ⁻³ Torr,
Line forming was performed while the electron source was cooled with liquid nitrogen. As the forming waveform, the voltage waveform shown in FIG. 4A was used, T1 was 1 ms, T2 was 10 ms, and the peak value (peak voltage value) of the triangular wave was 9.8 V.

Subsequently, a constant voltage was applied to each surface conduction electron-emitting device to emit electrons, and the phosphor target was irradiated with emitted electrons to emit light. As a result, no variation in the brightness of the luminescent spot due to each surface conduction electron-emitting device was observed, and it was found that the surface conduction electron-emitting device of the electron source of this example had extremely uniform electron emission characteristics.

For comparison, when the line forming was performed without cooling the electron source, the brightness of the luminescent spots at other portions was lower than the brightness of the luminescent spots at the end and the center of the line. I was

[Embodiment 3] FIG. 25 shows the display panel (display panel) 201 (see FIG. 8) of the embodiment 1 with image information provided from various image information sources such as television broadcasting. FIG. 1 is a diagram illustrating an example of an image display device of the present invention configured to be able to display.

In the figure, reference numeral 201 denotes a display panel;
1 is a display panel driving circuit, 1002 is a display controller, 1003 is a multiplexer, 10
04 is a decoder, 1005 is an input / output interface circuit, 1006 is a CPU, 1007 is an image generation circuit, 10
08, 1009 and 1010 are image memory interface circuits, 1011 is an image input interface circuit,
1012 and 1013 are TV signal receiving circuits, and 1014 is an input unit.

When the present display device receives a signal containing both video information and audio information, such as a television signal, it naturally reproduces the audio simultaneously with the display of the video. Descriptions of circuits, speakers, and the like related to reception, separation, reproduction, processing, storage, and the like of audio information that are not directly related to the features of the present invention are omitted.

Hereinafter, each part will be described along the flow of the image signal.

First, the TV signal receiving circuit 1013 is a circuit for receiving a TV image signal transmitted using a wireless transmission system such as radio waves or spatial optical communication.

The format of the TV signal to be received is not particularly limited. For example, NTSC, PAL, SE
Various systems such as the CAM system may be used. Further, a TV signal composed of a larger number of scanning lines than these, for example, a so-called high-definition TV including the MUSE system is suitable for taking advantage of the display panel 201 suitable for a large area and a large number of pixels. Signal source.

T received by TV signal receiving circuit 1013
The V signal is output to the decoder 1004.

An image TV signal receiving circuit 1012 is a circuit for receiving a TV image signal transmitted using a wired transmission system such as a coaxial cable or an optical fiber. Similarly to the TV signal receiving circuit 1013, the system of the TV signal to be received is not particularly limited, and the TV signal received by this circuit is also output to the decoder 1004.

Image input interface circuit 1011
Is a circuit for capturing an image signal supplied from an image input device such as a TV camera or an image reading scanner. The captured image signal is output to the decoder 1004.

Image memory interface circuit 1010
Is a circuit for capturing an image signal stored in a video tape recorder (hereinafter abbreviated as VTR). The captured image signal is output to a decoder 1004.

Image memory interface circuit 1009
Is a circuit for taking in an image signal stored in a video disk.
04 is output.

Image memory-interface circuit 100
Reference numeral 8 denotes a circuit for capturing an image signal from a device storing still image data, such as a so-called still image disk.
Is output to

The input / output interface circuit 1005
This is a circuit for connecting the present display device to an output device such as an external computer, computer network, or printer. In addition to inputting and outputting image data and character / graphic information, control signals and numerical data can be input and output between the CPU 1006 of the display device and the outside in some cases.

The image generation circuit 1007 includes image data and character / graphic information input from the outside via the input / output interface circuit 1005, or the CPU 1006.
This is a circuit for generating display image data based on the image data and character / graphic information output from the display unit. Inside this circuit, for example, a rewritable memory for storing image data and character / graphic information, a read-only memory storing an image pattern corresponding to a character code,
A circuit necessary for generating an image such as a processor for performing image processing is incorporated therein.

The display image data generated by this circuit is output to the decoder 1004, but may be output to an external computer network or printer via the input / output interface circuit 1005 in some cases.

The CPU 1006 mainly performs operations related to operation control of the display device and generation, selection, and editing of a display image.

For example, a control signal is output to the multiplexer 1003, and image signals to be displayed on the display panel 201 are appropriately selected or combined. At that time, a control signal is generated for the display panel controller 1002 in accordance with an image signal to be displayed, and a display frequency, a scanning method (for example, interlaced or non-interlaced), and the number of scanning lines per screen are displayed. The operation of the device is appropriately controlled. Further, image data and character / graphic information are directly output to the image generation circuit 1007,
Alternatively, an external computer or memory is accessed via the input / output interface circuit 1005 to input image data and character / graphic information.

The CPU 1006 may, of course, be involved in operations for other purposes. For example, it may be directly related to a function of generating and processing information, such as a personal computer or a word processor. Alternatively, as described above, the computer may be connected to an external computer network via the input / output interface circuit 1005 to perform operations such as numerical calculations in cooperation with external devices.

The input unit 1014 is for the user to input commands, programs, data, and the like to the CPU 1006. For example, in addition to a keyboard and a mouse,
Various input devices such as a joystick, a barcode reader, and a voice recognition device can be used.

The decoder 1004 converts various image signals input from the above 1007 to 1013 into three primary color signals,
Alternatively, it is a circuit for inversely converting a luminance signal into an I signal and a Q signal. As shown by the dotted line in FIG.
004 preferably has an internal image memory. This is for handling television signals that require an image memory when performing inverse conversion, such as the MUSE method.

The provision of the image memory facilitates the display of a still image. Alternatively, in cooperation with the image generation circuit 1007 and the CPU 1006, there is obtained an advantage that image processing and editing including image thinning, interpolation, enlargement, reduction, and synthesis become easy.

A multiplexer 1003 is connected to the CPU 10
A display image is appropriately selected based on a control signal input from the controller 06. That is, the multiplexer 1003 selects a desired image signal from the inversely converted image signals input from the decoder 1004 and outputs the selected image signal to the drive circuit 1001. In that case, by switching and selecting an image signal within one screen display time, it is also possible to divide one screen into a plurality of areas and display different images depending on the areas, as in a so-called multi-screen TV. .

Display panel controller 1002
Is a circuit for controlling the operation of the drive circuit 1001 based on a control signal input from the CPU 1006.

For example, the display panel 201 is related to the basic operation of the display panel 201.
A signal for controlling the operation sequence of the driving power supply (not shown) is output to the driving circuit 1001. As a method related to the driving method of the display panel 201, a signal for controlling, for example, a screen display frequency and a scanning method (for example, interlaced or non-interlaced) is output to the driving circuit 1001. In some cases, a control signal relating to image quality adjustment such as luminance, contrast, color tone, and sharpness of a display image is supplied to the driving circuit 10.
01 may be output.

The drive circuit 1001 is a circuit for generating a drive signal to be applied to the display panel 201, based on an image signal input from the multiplexer 1003 and a control signal input from the display panel controller 1002. It works.

The function of each section has been described above. With the configuration illustrated in FIG. 25, the display device according to the present embodiment can display image information input from various image information sources on the display panel 2.
01 can be displayed. That is, various image signals including television broadcasting are supplied to the decoder 1004.
After being inversely converted in, the signal is appropriately selected in the multiplexer 1003 and input to the drive circuit 1001. On the other hand, the display controller 1002 generates a control signal for controlling the operation of the driving circuit 1001 according to the image signal to be displayed. The drive circuit 1001 applies a drive signal to the display panel 201 based on the image signal and the control signal. Thus, an image is displayed on the display panel 201. These series of operations are totally controlled by the CPU 1006.

In the present image forming apparatus, the image memory built in the decoder 1004 and the image generation circuit 100
7 and the CPU 1006 involve not only displaying a selected one of a plurality of pieces of image information but also enlarging, reducing, rotating, moving, edge emphasizing, thinning out, and interpolating the image information to be displayed. It is also possible to perform image processing such as color conversion, image aspect ratio conversion and the like, and image editing such as synthesis, erasure, connection, replacement, and fitting. Although not particularly described in the description of the present embodiment, a dedicated circuit for processing and editing audio information may be provided as in the above-described image processing and image editing.

Therefore, the present image forming apparatus can be used for a television broadcast display device, a video conference terminal device, an image editing device for handling still images and moving images, a computer terminal device, an office terminal device such as a word processor,
It is possible to combine functions such as game machines with one unit,
It has a very wide range of applications for industrial or consumer use.

FIG. 25 shows only an example of the configuration of an image forming apparatus using a display panel in which an electron-emitting device is used as an electron beam source. It goes without saying that it is not limited.

For example, among the components shown in FIG. 25, circuits relating to functions that are unnecessary for the purpose of use may be omitted.
Conversely, additional components may be added depending on the purpose of use. For example, when the present image forming apparatus is applied as a videophone, it is preferable to add a transmission / reception circuit including a television camera, an audio microphone, an illuminator, and a modem to the components.

In the present image forming apparatus, in particular, since the display panel 201 according to the present invention can be easily made thin, the depth of the display device can be reduced. In addition, since it is easy to enlarge the screen, the brightness is high, and the viewing angle characteristics are excellent, it is possible to display an image full of a sense of reality and full of power with good visibility.

[0211]

As described above, according to the present invention,
When forming is performed collectively on an element array in which a plurality of surface conduction electron-emitting elements are wired, the forming conditions of each element can be made uniform. For this reason, it is possible to reduce the variation in the characteristics between the elements, which has been generated by the collective forming.

In particular, an apparatus which is extremely useful for manufacturing a large-area electron source having a large number of elements and a large-screen image forming apparatus using the electron source and which can obtain a high-quality image without image unevenness can be used. Can be provided well and stably.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a planar surface conduction electron-emitting device showing an example of a surface conduction electron-emitting device according to the present invention.

FIG. 2 is a configuration diagram of a vertical surface conduction electron-emitting device showing another example of the surface conduction electron-emitting device according to the present invention.

FIG. 3 is a diagram for explaining an example of a method of manufacturing the surface conduction electron-emitting device of FIG.

FIG. 4 is an example of a voltage waveform used for a forming process.

FIG. 5 is a schematic diagram of a measurement evaluation system for measuring electron emission characteristics of a surface conduction electron-emitting device.

FIG. 6 is a diagram showing a typical example of the relationship between the emission current Ie and the device current If and the device voltage Vf of the surface conduction electron-emitting device.

FIG. 7 is a schematic diagram of an electron source having a simple matrix arrangement.

FIG. 8 is a partially cutaway perspective view showing a schematic configuration of a display panel including an electron source in a simple matrix arrangement.

FIG. 9 is a diagram illustrating a configuration example of a fluorescent film used for a display panel.

FIG. 10 is a block diagram illustrating an example of a driving circuit of an image forming apparatus that performs image display according to an NTSC television signal.

FIG. 11 is a schematic view of a trapezoidal arrangement of electron sources.

FIG. 12 is a partially cutaway perspective view showing a schematic configuration of a display panel provided with a trapezoidal arrangement of electron sources.

FIG. 13 is a partial plan view of an electron source having a simple matrix arrangement shown in the first embodiment.

FIG. 14 is a partial cross-sectional view of the electron source of FIG.

FIG. 15 is a view illustrating a manufacturing process of the electron source in FIG. 13;

16 is a partial plan view of a mask used in the manufacturing process of the electron source in FIG.

FIG. 17 is a diagram for explaining a method of cooling the display panel in the forming step shown in the first embodiment.

FIG. 18 is a luminance distribution diagram of a display panel.

FIG. 19 is a plan view of a one-dimensional linear electron source.

FIG. 20 is an equivalent circuit diagram of an electron source having a simple matrix arrangement.

FIG. 21 is an equivalent circuit diagram of one line before line forming.

FIG. 22 is an equivalent circuit diagram of a line immediately before forming an n-th element during line forming.

FIG. 23 is a distribution diagram of voltage or power to each element when an electron source having a simple matrix arrangement is line-formed by a conventional method.

FIG. 24 is a diagram showing an equivalent circuit of an electron source in a ladder arrangement, and a distribution of voltage or power to each element by conventional line forming.

FIG. 25 is a block diagram of an image forming apparatus according to a third embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate 2 Electron emission part 3 Conductive thin film 4, 5 Device electrode 21 Step forming member 50 Ammeter for measuring device current If flowing through conductive thin film 3 51 Power supply for applying device voltage Vf to electron emission device 52 an ammeter for measuring an emission current Ie emitted from the electron emission section 2 53 a high voltage power supply for applying a voltage to the anode electrode 54 54 an anode for capturing electrons emitted from the electron emission section 2 Electrode 55 Vacuum device 56 Exhaust pump 102 X-direction wiring 103 Y-direction wiring 104 Surface conduction type electron-emitting device 105 Connection 111 Rear plate 112 Support frame 113 Glass substrate 114 Fluorescent film 115 Metal back 116 Face plate Hv High voltage terminal 118 Enclosure 121 Black conductive material 122 Phosphor 201 Display panel 202 Scanning circuit 203 Control Circuit 204 Shift register 205 Line memory 206 Synchronous signal separation circuit 207 Modulation signal generator Va DC voltage source Vx DC voltage source 301 Display panel 302 Grid electrode 303 Opening for passing electrons 304 Common wiring for wiring electron emitting elements 104 Interlayer insulating layer 402 contact hole 403 Cr film 501 container of liquid nitrogen 1001 drive circuit of display panel 201 1002 display controller 1003 multiplexer 1004 decoder 1005 input / output interface circuit 1006 CPU 1007 image generation circuit 1008, 1009, 1010 image memory interface circuit 1011 image Input interface circuit 1012, 1013 TV signal receiving circuit 1014 Input unit

Claims (19)

(57) [Claims] To 1. A substrate, a device column wire a plurality of surface conduction electron-emitting device the electron emission portion which is thus formed the forming the conductive thin film to contact between a pair of device electrodes are provided in the manufacturing method of the electron source having at least one row, and characterized in that cooling in performing forming by applying a voltage to lump sum to between the device electrodes of the electron-emitting device of at least the one row, the entire electron source Method of manufacturing an electron source. To 2. A substrate, the element array wire a plurality of surface conduction electron-emitting device the electron emission portion which is thus formed the forming the conductive thin film to contact between a pair of device electrodes are provided in the manufacturing method of the electron source having at least one row, at least between the device electrodes of the electron-emitting device of the first column in performing a forming by applying a voltage to lump sum, connecting said plurality several electron-emitting element wiring A method for manufacturing an electron source, comprising cooling a part. To 3. A substrate, the element array wire a plurality of surface conduction electron-emitting device the electron emission portion which is thus formed the forming the conductive thin film to contact between a pair of device electrodes are provided in the manufacturing method of the electron source having at least one row, when performing a forming by applying a voltage to lump sum to between the device electrodes of the electron-emitting device of at least the one row, conductive of the plurality of electron-emitting devices A method for manufacturing an electron source, comprising cooling a thin film portion. 4. A substrate, the element array you wire a plurality of surface conduction electron-emitting device the electron emission portion which is thus formed the forming the conductive thin film to contact between a pair of device electrodes are provided in the manufacturing method of the electron source having at least one row, at least between the device electrodes of the electron-emitting device of the first column in performing a forming by applying a voltage to lump sum, connecting said plurality several electron-emitting element wiring A method for manufacturing an electron source, comprising cooling a portion and a conductive thin film portion of the plurality of electron-emitting devices. 5. A wiring connecting the plurality of electron-emitting devices.
The method of manufacturing an electron source according to any one of claims 1, 2 and 4 , wherein the electron source has a positive temperature coefficient with respect to electric resistance . 6. The method according to claim 1, wherein the conductive thin film of the electron-emitting device is
5. The method according to claim 1 , wherein the electron source has a negative temperature coefficient with respect to resistance . 7. The method according to claim 7, wherein the wiring of the electron emission element is a matrix.
7. An arrangement according to claim 1, wherein
3. The method for manufacturing an electron source according to claim 1. 8. The wiring of said electron-emitting device is arranged in a ladder-like manner.
The method according to any one of claims 1 to 6, wherein
Method of manufacturing electron source. 9. The production method according to claim 1, wherein
The electron source obtained by. 10. A substrate, the element array you wire a plurality of surface conduction electron-emitting device the electron emission portion which is thus formed the forming the conductive thin film to contact between a pair of device electrodes are provided A method of manufacturing an image forming apparatus comprising: an electron source having at least one row; and an image forming member for forming an image by irradiating an electron beam emitted from the electron source. when performing a forming by applying a voltage to lump sum, the electron source all
A method for manufacturing an image forming apparatus, comprising cooling a body . 11. A substrate, the element array you wire a plurality of surface conduction electron-emitting device the electron emission portion which is thus formed the forming the conductive thin film to contact between a pair of device electrodes are provided A method of manufacturing an image forming apparatus comprising: an electron source having at least one row; and an image forming member for forming an image by irradiating an electron beam emitted from the electron source. Bulk when performing a forming by applying a voltage to, a method for manufacturing an image forming apparatus characterized by cooling the wire portion connecting the plurality several electron-emitting devices. 12. A pair of device electrodes are connected on a substrate.
Electron emission formed by forming a conductive thin film
A plurality of surface conduction electron-emitting devices provided with protrusions
Forming an image by irradiating an electron source having at least one row of element rows with wires and irradiating an electron beam emitted from the electron source
Manufacturing method of an image forming apparatus having an image forming member
At least between the device electrodes of the one row of electron-emitting devices.
When forming by applying voltage,
Cooling the conductive thin film part of the electron-emitting device
Manufacturing method of an image forming apparatus. 13. A connection between a pair of device electrodes on a substrate.
Electron emission formed by forming a conductive thin film
A plurality of surface conduction electron-emitting devices provided with protrusions
Forming an image by irradiating an electron source having at least one row of element rows with wires and irradiating an electron beam emitted from the electron source
Manufacturing method of an image forming apparatus having an image forming member
At least between the device electrodes of the one row of electron-emitting devices.
When forming by applying voltage,
A wiring portion connecting the electron-emitting devices, and the plurality of electron-emitting devices.
A method for manufacturing an image forming apparatus, comprising cooling a conductive thin film portion of an output element . 14. A wiring connecting the plurality of electron-emitting devices.
Must have a positive temperature coefficient with respect to electrical resistance.
14. The method according to claim 10, wherein:
Manufacturing method of an image forming apparatus. 15. The conductive thin film of the electron-emitting device is
Note that it has a negative temperature coefficient with respect to air resistance.
The image according to claim 10, wherein the image is a symbol.
Manufacturing method of forming apparatus. 16. The wiring of the electron-emitting device is
16. An arrangement according to claim 10, wherein:
A method for manufacturing an image forming apparatus according to any one of the above. 17. The wiring of the electron-emitting device is arranged in a ladder shape.
The method according to any one of claims 10 to 15, wherein
3. The method for manufacturing an image forming apparatus according to claim 1. 18. The product according to claim 10.
Depending on the manufacturing method Image forming apparatus obtained. (19) Display device for television broadcasting, television
Conference system display device, computer display device
19. The image forming apparatus according to claim 18, which is used for any of
Place.