JP2823115B2 - Method for manufacturing composite semiconductor substrate - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a composite semiconductor substrate including a dielectric isolation substrate for a semiconductor device on which a power element and the like can be formed.

[0002]

2. Description of the Related Art A dielectric isolation technique known as a method for isolating semiconductor single crystal regions from each other includes:
Compared with the standard junction separation substrate, the separation technology between devices is extremely good, and the application circuit is less limited,
It is suitable for high voltage and high current power ICs. A typical dielectric isolation method is EPIC (Epitaxial Passivat).
Although the ed Integrated Circuit) method is known, various methods have been studied in view of problems such as handling a large wafer diameter and manufacturing cost. SOI (Silicon On Insulato) that manufactures substrates by bonding multiple semiconductor substrates
r) Technology is one of them. Above all, as an excellent method for bonding substrates, for example, Japanese Patent Application Laid-Open No. 61-24 / 1986
There is a method disclosed in JP-A-2033.

The above publication discloses that a soot-like substance obtained by burning a raw material containing silicon tetrachloride as a main component with a oxyhydrogen flame burner is deposited on the surface of a semiconductor substrate, a support substrate is superposed, and then helium gas and oxygen A method of bonding a semiconductor substrate by sintering a soot-like substance by heat treatment in a mixed gas atmosphere is disclosed. This method is excellent in that a large-diameter composite semiconductor substrate having few crystal defects can be manufactured at a relatively low cost. As shown in FIG. 1, a substrate having a plurality of semiconductor single crystal regions manufactured by a conventional bonding method of this kind is usually provided with an insulating film 12 such as SiO _2.
The semiconductor single crystal islands 11 covered with are bonded to the support substrate 15 by the glass material layer 13.

[0004] However, when a semiconductor substrate is mounted, the semiconductor substrate may be exposed to a severe environment, and therefore, environmental resistance characteristics, particularly, moisture resistance may become a problem.

Further, recently, a semiconductor substrate having a larger wafer diameter has been required, and some of the semiconductor substrates bonded by the conventional method disclosed in the above-mentioned publications have a warp (a peripheral portion and a central portion) associated with a large wafer. As a result, there is a problem that it is difficult to transport the semiconductor device on a production line for manufacturing various devices on a semiconductor substrate, and it is difficult to increase the precision of fine photolithography.

[0006]

As a result of various studies, the inventors of the present invention have found that the dispersion of glass materials, especially the atomic ratio of silicon to boron (Si / B
It has been found that the above problems can be solved by minimizing the variation in the ratio).

The present invention provides a composite semiconductor in which one or a plurality of semiconductor single crystal regions separated from each other and a supporting substrate for supporting the single crystal regions are joined by a glass material containing silicon, boron and oxygen as main components. In the method for producing a substrate, the glass material is SiO ₂ obtained by supplying a raw material containing a silicon compound and a boron compound as main components into an oxyhydrogen flame burner having a multilayer coaxial cylindrical shape and burning the raw material.
And glassy fine particles containing B ₂ O ₃ as a main component, which are heat-sintered.
The present invention relates to a method for manufacturing a composite semiconductor substrate, wherein glassy fine particles are deposited on the bonding surface by scanning the oxyhydrogen flame burner a plurality of times on the bonding surface side of the semiconductor single crystal region.

According to the present invention, the deposition of vitreous fine particles mainly composed of SiO ₂ and B ₂ O ₃ obtained by burning a silicon compound and a boron compound with a multi-layer coaxial cylindrical oxyhydrogen flame burner is controlled. By doing so, variations in the composition and properties of the glass material described above can be reduced.

At the tip of the oxyhydrogen flame burner main body, a conduit for guiding the vitreous fine particles to the substrate surface is provided.
A high temperature region of 0 ° C. or higher is formed. Therefore, B ₂ O _{3 having} a low vaporization temperature becomes a gas state having a large diffusion coefficient and diffuses throughout this conduit, and the concentration of B ₂ O ₃ is highest in the center of the lower part of the burner, and the concentration distribution becomes lower toward the periphery. To deposit on the substrate. On the other hand, the SiO ₂ is solid fine particles even in the high temperature region, corresponding to the diffusion coefficient than in a gas reduced, without significant diffusion from the reaction zone in order that the concentration of SiO ₂ in the central portion of the normal burner lower small burner lower The donut-shaped sediment distribution has a high concentration at the periphery.

In the present invention, by scanning the oxyhydrogen flame burner a plurality of times, the glassy fine particles are deposited in a multi-layered form on the bonding surface. The variation in the composition ratio of SiO ₂ and B ₂ O ₃ in the vitreous fine particles in the thickness direction of the bonding surface is smaller than that in the case of deposition. Therefore, the variation in the atomic ratio of silicon to boron (Si / B ratio) in the thickness direction of the glass material after the heat bonding is reduced, the moisture resistance of the obtained composite semiconductor substrate is improved, and the warpage of the substrate is reduced. In particular, in order to reduce the warpage, the atomic ratio of silicon to boron (Si / B
Even when the ratio (a) is reduced, the ratio (a) does not become excessively small due to the variation, so that a decrease in the moisture resistance can be prevented.

As the oxyhydrogen flame burner in the present invention
Is a multi-layer coaxial cylindrical oxyhydrogen flame burner
It is. During the combustion of silicon compounds and boron compounds, these compounds are discharged from near the center of the burner,
By discharging oxygen and hydrogen in the form of an oxyhydrogen flame from the vicinity of the burner outer peripheral portion, the silicon compound and the boron compound can be efficiently burned, and glassy fine particles can be deposited.

In the glass material of the present invention containing silicon, boron and oxygen as main components, when the atomic ratio (Si / B ratio) a of silicon and boron is excessively large, it is necessary to increase the sintering temperature at the time of joining. In addition, the sintering time is prolonged, the production efficiency is deteriorated, and the warpage of the substrate is increased. If it is excessively small, the moisture resistance deteriorates.
8 ≦ a ≦ 4.0, preferably 1.0 ≦ a ≦ 4.0
In particular, when 1.4 ≦ a ≦ 3.0, minute voids generated on the joint surface between the semiconductor substrate and the glass material layer (obtained by sintering the soot-like material). It is preferable because the number of holes is small, the filling state of the groove is good, the moisture resistance is improved, and the warpage is reduced.

The structure of the composite semiconductor substrate obtained by the present invention will be described with reference to FIG. The plurality of semiconductor single crystal regions 11 are separated from each other and are electrically insulated from each other. As shown in the figure, the periphery of the semiconductor single crystal region 11 is usually covered with an insulating film 12. In this figure, a layer 14 made of a semiconductor polycrystal or an amorphous semiconductor is provided so as to be in contact with the insulating film 12 and to connect the plurality of semiconductor single crystal regions 11 to each other. This is preferable because the warpage of the substrate can be reduced. The semiconductor single crystal regions and the above-described layers connecting these regions are supported by a support substrate 15 via a glass material layer 13.

As a material of the semiconductor single crystal region 11, silicon is typical, but GaAs, GaAlAs, In
Various compound semiconductors such as P and SiC and single element semiconductors such as Ge may be used.

There is no particular limitation on the normally formed insulating film 12, but an SiO ₂ film is preferably used. The thickness of the insulating film is usually 0.5 to 2.0 μm. The semiconductor polycrystalline layer 14 formed as desired to reduce the warpage of the substrate may be a polycrystalline layer of a single element semiconductor such as silicon or Ge, or GaAs, GaAlA.
Examples include polycrystalline layers of various compound semiconductors such as s, InP, and SiC. Examples of the amorphous semiconductor layer 14 include amorphous semiconductor layers made of amorphous silicon, silicon germanium, and the like. The thickness of the semiconductor polycrystalline layer or the amorphous semiconductor layer is usually 0.1.
It is 1 to 100 μm, preferably 1 to 50 μm.

The glass material layer 13 contains silicon, boron and oxygen as main components. If the thickness of the glass material layer is too thin, it may not be completely joined, and if it is too thick, the joining strength is reduced.
m, preferably 0.5 to 100 μm. Note that a phosphorus compound or a germanium compound can be added to lower the sintering temperature of the glass material layer.

The supporting substrate 15 has good bonding properties with vitreous material, is unlikely to have distortion on the bonding surface after bonding, has a close thermal expansion coefficient with the semiconductor single crystal region 11, and has a small warpage of the composite semiconductor substrate. Material is selected. Usually, the same material as the semiconductor single crystal region 11 is selected.

The semiconductor single crystal region 11 in the above description
May be different from each other between the semiconductor single crystal regions. Further, a structure in which a part of the semiconductor single crystal region 11 is directly bonded to the support substrate 15 or a structure in which a part of the support substrate appears on the device surface may be employed.

In the above description, the semiconductor single crystal regions are separated from each other. However, as shown in FIG. 3, the semiconductor single crystal region 11 is one, and the insulating layer 12, the semiconductor polycrystal or the amorphous semiconductor It may be joined to the support substrate 15 via the layer 14 and the glass material 13.

Next, an example of a method for manufacturing a composite semiconductor substrate according to the present invention will be described with reference to FIG. First, an isolation groove is formed on the surface of the semiconductor substrate 10 to be the semiconductor single crystal region 11.
Although the figure shows a V-shaped groove, the shape may be a trench or the like, and can be selected in consideration of a target device and manufacturing cost. As a manufacturing method, it can be manufactured by a commonly used method such as wet anisotropic etching using KOH or dry etching using SF ₆ gas. The depth of the groove is preferably slightly deeper than the thickness of the semiconductor single crystal region 11, and is usually 0.1 μm to
It is about 300 μm.

Since the semiconductor substrate 10 finally becomes the semiconductor single crystal region 11, the material is the same as the semiconductor single crystal region.

Next, an insulating film 12 is formed on the surface of the semiconductor substrate 10. As the insulating film, a SiO ₂ film is preferably used. The SiO ₂ film is formed by a CVD method or the like. When the semiconductor substrate 10 is silicon, SiO ₂ obtained by thermally oxidizing the surface is preferably used.

Next, a semiconductor polycrystalline or amorphous semiconductor layer 14 is formed on the insulating film 12 as required. Although the manufacturing method is not particularly limited, for example, in the case of polycrystalline silicon, it can be manufactured by a CVD (chemical vapor deposition) method or the like.

Next, after the glass material layer 13 is formed, the semiconductor substrate 10 and the support substrate 15 are bonded together by overlapping and heating the support substrate 15. The glass material layer contains silicon, boron and oxygen as main components, and may contain a phosphorus compound and a germanium compound as required. The glass material layer is manufactured by a soot deposition method. According to the method of the present invention, the entire surface of the groove is filled with the glass material, which is preferable.

In the soot deposition method, SiO ₂ and B ₂ O ₃ obtained by burning a raw material mainly containing a silicon compound such as SiCl ₄ and a boron compound such as BCl _{3 in} an oxyhydrogen flame burner are used. This is a method in which a soot-like substance as a main component is deposited on the surface of the semiconductor substrate 10, superimposed on the support substrate 15, heated, and then sintered to bond the semiconductor substrate 10 and the support substrate 15.

In the present invention, by scanning the semiconductor substrate 10 a plurality of times with a multi-layer coaxial cylindrical flame oxyhydrogen flame burner, soot-like substances are deposited in multiple layers on the substrate, so that heating is performed. The variation in the Si / B atomic ratio in the thickness direction of the glass material after joining becomes small. The number of scans of the oxyhydrogen flame burner is not particularly limited, and the number of scans is determined in consideration of the scan speed so as to obtain a desired thickness of the glass material, and is usually about 5 to 10 times. As a scanning method of the oxyhydrogen flame burner, it is not always necessary to draw a trajectory constituted by a straight line. .

Production of composite semiconductor substrate by soot deposition method
The silicon compound used in the oxyhydrogen flame
By burning with SiO_TwoIs a compound that produces
And the general formula SiR¹R^TwoR^ThreeR^FourCompound represented by
(Substituent R¹, R^Two, R^ThreeAnd R^FourAre identical to each other
May be different, halogen, hydrogen, an alkyl group,
It is a substituent selected from an alkyloxy group. );
Containing two or more silicon atoms such as siloxane and polysiloxane.
Having siloxanes; silicon such as disilane and polysilane
Examples include silanes containing two or more atoms.
You. Among them, the obtained SiO_TwoQuality and particle size etc.
From a viewpoint, a compound represented by the general formula SiR¹R^TwoR^ThreeR^Fourso
A compound represented by the substituent R¹, R^Two, R^ThreeAnd
And R^Four(R¹~ R^FourMay be the same or different
No. ) Is chlorine, hydrogen, an alkyl group having 1 to 3 carbon atoms,
A substituent selected from an alkyloxy group having a prime number of 1 to 3
It is. Among these, particularly preferred are the above substituents
R¹, R^Two, R^ThreeAnd R ^Four(R¹~ R^FourAre identical to each other
But they may be different. ) Is chlorine or hydrogen
It is. Specific examples of these silicon compounds include SiCl
_Four, SiH_Four, Si _TwoH₆, SiHCl_Three, Si (OE
t)_FourAnd Si (OMe)_FourEtc.
You.

Examples of the boron compound include boron trichloride, borane (BH ₃ , B ₂ H ₆ ), BHCl ₂ , B (OE
t) ₃ and B (OMe) _3. Among them, boron trichloride is preferable because of easy supply.

The phosphorus compound and the germanium compound which are optionally added to lower the sintering temperature of the soot-like substance include those which generate oxides of phosphorus and germanium by burning in an oxyhydrogen flame. Any compound can be used. Examples of the phosphorus compound include phosphorus pentachloride, phosphorus oxychloride (POCl ₃ ), and phosphine (PH ₃ ). Examples of the germanium compound include germanium tetrachloride and germane (GeH _4). ) And the like. Of these, phosphorus pentachloride and phosphorus oxychloride (P
OCl ₃ ) and germanium tetrachloride.

If the raw material is supplied into the oxyhydrogen flame, if the raw material is a gas, the raw material is supplied directly into the oxyhydrogen flame or mixed with hydrogen or oxygen while adjusting the flow rate with a valve or the like. To be carried out. If the raw material is a liquid, it is supplied by a spray device, or by using a hydrogen gas, an oxygen gas or an inert gas such as an argon gas or a nitrogen gas as a carrier and accompanying the vapor of the raw material,
Alternatively, it can be supplied by a method such as heating the raw material and pumping it by the vapor pressure of the raw material itself.

The above raw material supplied in the oxyhydrogen flame is
Hydrolyzed, SiO_TwoAnd B_TwoO _ThreeThe main component
Produces soot. This soot-like substance is ultra-fine particles of glass
And a particle size of about 0.05 to 0.2 μm.
Oxy-hydrogen flame refers to the simultaneous supply of oxygen and hydrogen.
It is a combustion flame obtained by:

The soot-like substance produced is immediately deposited on the surface of the semiconductor substrate to be bonded. Preferably, the deposition is performed by blowing an oxyhydrogen flame directly onto the semiconductor substrate.

Next, the support substrate 15 to be joined is placed on the soot-like substance deposit, and the soot-like substance is sintered by heat treatment. In sintering, heat treatment is performed in a mixed gas of an oxygen gas and an inert gas in order to prevent voids from being formed as much as possible in the valleys of the grooves provided in the semiconductor substrate 10. The oxygen gas is preferably 10% or more, preferably substantially in oxygen gas. That is, oxygen gas is 90% or more and helium gas is 2% or more.
% Or less, and other gases having no reactivity with the semiconductor substrate or the like are used. In particular, the oxygen gas content is 95% or more, and more preferably 99% or more. The heat treatment temperature during sintering is 800 to 1400 ° C. The soot-like substance becomes vitrified when sintered, and the semiconductor substrate 10 and the support substrate 15 are bonded to each other.

Thereafter, the semiconductor substrate 10 is ground from the side opposite to the bonding surface and further polished, whereby a composite semiconductor substrate is manufactured. If the semiconductor substrate used for bonding is a substrate with a groove such as a V-shaped groove or a trench groove, an island-shaped separated semiconductor single crystal region 11 is obtained through a grinding / polishing process.

[0035]

EXAMPLES The present invention will be described more specifically below, but the present invention is not limited thereto. Example 1 [Preparation of Sample 1] The composite semiconductor substrate shown in FIG. 2 was prepared as follows. A substrate having a V-shaped concave portion was manufactured as follows. First, as shown in FIG.
4 inch diameter with a (100) plane orientation, thickness 525μ
A V-groove was formed at a depth of 50 μm on the surface of the m silicon substrate 10 by photolithography and anisotropic etching. The V-groove is formed by photo-etching
₂ mask was prepared, and the area where Si was exposed was
It was produced by etching at a temperature of 80 ° C. using a so-called anisotropic etching solution comprising 90 parts by weight of a 0% aqueous solution, 5 parts by weight of isopropyl alcohol and 5 parts by weight of n-butyl alcohol.

Subsequently, 1.5 μm thick SiO ₂ was formed as an insulating film 12 on the surface of the V groove by thermal oxidation.
Next, polycrystalline silicon was formed to a thickness of 20 μm on the surface where the V-groove was formed by CVD.

Next, gaseous sulfur is adjusted so that the atomic ratio (Si / B) a of silicon to boron of the glass material becomes 2.0.
iCl ₄ (supply amount 210 ml / min) and gaseous BCl ₃ (supply amount 105 ml / min) were converted into hydrogen (supply amount 850 ml / min) and oxygen (supply amount 5000 ml / m).
in), and the soot-like substance obtained by decomposition was deposited on the surface of the semiconductor substrate 10 on which the V-groove was formed. The oxyhydrogen flame burner scanned seven times at a speed of 100 mm / sec. The amount of the soot-like material deposited was adjusted to 20 μm when this was sintered. A 4-inch diameter, 450 μm thick silicon substrate 15 having a plane orientation (100) plane separately prepared is superimposed on the soot-like substance deposition, and heated to 1280 ° C. in an oxygen atmosphere in a heating furnace for 3 hours. When heated,
The soot-like material was sintered, shrunk in volume to a thickness of 20 μm and vitrified at the same time, and the two silicon substrates were uniformly bonded to each other.

The substrate thus bonded is connected to an ultrasonic image search device (UH Pulse 20 manufactured by Olympus Corporation).
When the groove filling state was examined in 0), it was confirmed that no holes were present. Further, when the cleaved surface of this substrate was observed with a scanning electron microscope, it was found that the glass was filled in every corner of the V-shaped groove. Using a sample prepared under the same conditions to determine the composition ratio of the glass material, the glass material was dissolved in a hydrogen fluoride-based aqueous solution, and quantitative analysis was performed by ICP. The atomic ratio a of Si / B was 2. It was 0.

Next, polishing is performed from the opposite side of the bonding of the silicon substrate 10 to a predetermined thickness, and further polishing is performed by using a mechanochemical polishing method. Unnecessary portions are formed until the polycrystalline silicon layer appears on the surface. Was removed to form island-shaped semiconductor regions 11 which were insulated from each other. At this time, when the semiconductor single crystal region was placed on a plane with the semiconductor single crystal region facing upward, the central portion was slightly convex 80 μm above the periphery. Therefore, there was no trouble at the time of transportation, and the yield in the photolithography process was good.

When the substrate 1 was cut into chips of 5 mm square and the sintered state of the cross section of the chip was observed using a scanning electron microscope, the semiconductor substrate of sample 1 and the supporting substrate were uniformly bonded. And the bonding state was good. Further, when the filling state of the groove was observed, no minute holes were generated, and no damage such as scuffing was observed.

A chip cut out of the bonded substrate manufactured in the same manner as in the above-mentioned sample 1 was subjected to a moisture resistance test according to a steam pressure test described on page 64 of the Mitsubishi Semiconductor Reliability Handbook (3rd edition). That is, after being left in a pressurized steam atmosphere at a temperature of 121 ° C. and a humidity of 100% for 4 hours and 8 hours in addition to the standard conditions of 2 hours,
Observation of the chip end surface with a scanning electron microscope revealed no damage such as cracks and excellent moisture resistance.

A bonded composite semiconductor substrate having various glass compositions was prepared in the same manner as in the case of the sample 1, and the sintered state of the cross section of the chip was observed using a scanning electron microscope for each sample cut into chips of 5 mm square. Then, the bonding state and the filling state of the groove were examined. Further, each sample was heated to a temperature of 121.
After leaving for 2 hours, 4 hours, and 8 hours in a pressurized steam atmosphere at 100 ° C. and a humidity of 100%, the chip end surface of each sample was observed with a scanning electron microscope to observe the occurrence of damage such as cracks. . Table 1 shows the bonding state, the groove filling state, and the results of the moisture resistance test.

[0043]

[Table 1]

In the table, samples that were partially peeled off when the bonded state was observed by a scanning electron microscope before the moisture resistance test were marked with a cross, and holes were observed when the filled state of the grooves was observed. The sample obtained was marked with a cross, and the sample in which some holes were found was marked with a triangle. Further, a sample in which cracks or peeling were observed on the joint surface of the sample end surface after the high temperature and high humidity atmosphere storage test was marked with a cross.

[Preparation of Sample 18] One oxyhydrogen flame burner was used.
Sample 7 (1) was scanned once at a speed of 4 mm / sec.
A sample 18 having an atomic ratio of silicon to boron (Si / B) of 1.2 as a glass material was prepared in the same manner as described above (7 scans at a burner speed of 00 mm / sec). That is, the atomic ratio of silicon to boron (Si / B) a of the glass material is 1.2.
Gaseous SiCl ₄ (supply amount 170 ml /
min) and gaseous BCl ₃ (supply amount 145 ml /
min) is supplied into a multilayer coaxial cylindrical oxyhydrogen flame burner composed of hydrogen (supply amount 850 ml / min) and oxygen (supply amount 5000 ml / min), and a soot-like substance obtained by decomposition is formed into a V-groove. It was deposited on the surface of the semiconductor substrate 10 which was obtained. The amount of the soot-like material deposited was adjusted to 20 μm when this was sintered. A 4-inch diameter, 450 μm-thick silicon substrate 15 having a plane orientation (100) plane separately prepared is superimposed on the soot-like substance deposit,
The temperature was raised to 1280 ° C. in an oxygen atmosphere in a heating furnace and 3
After heating for an hour, the soot-like substance sinters and has a thickness of 20μ.
m and vitrified at the same time, and the two silicon substrates were uniformly bonded to each other.

The substrate thus bonded is connected to an ultrasonic image search device (UH Pulse 20 manufactured by Olympus Corporation).
When the groove filling state was examined in 0), it was confirmed that no holes were present. Further, when the cleaved surface of this substrate was observed with a scanning electron microscope, it was found that the glass was filled in every corner of the V-shaped groove. Using a sample prepared under the same conditions to determine the composition ratio of the glass material, the glass material was dissolved in a hydrogen fluoride-based aqueous solution, and quantitative analysis was performed by ICP. The atomic ratio a of Si / B was 1. It was 2.

Next, a polishing process is performed from the opposite side of the bonding of the silicon substrate 10 to a predetermined thickness, and further, a polishing process is performed using a mechanochemical polishing method, and unnecessary portions are formed until the polycrystalline silicon layer appears on the surface. Was removed to form island-shaped semiconductor regions 11 which were insulated from each other.

The sample 18 obtained by cutting the substrate into chips of 5 mm square was observed for the sintered state of the cross section of the chip using a scanning electron microscope. As a result, the semiconductor substrate and the support substrate of the sample 18 were uniformly joined. And the bonding state was good. Further, when the filling state of the groove was observed, no minute holes were generated, and no damage such as scuffing was observed.

A chip cut out of the bonded substrate manufactured by the same method as that of the sample 18 was subjected to a moisture resistance test in the same manner as in the case of the sample 7. That is, the temperature 121
After leaving for 8 hours in a pressurized steam atmosphere at 100 ° C. and a humidity of 100%, the chip end face was observed with a scanning electron microscope, and cracks were found.

[0050]

As described above in detail, the composite semiconductor substrate of the present invention has excellent moisture resistance when cut into chips and is practically useful, and has a small warpage even when the wafer has a large wafer diameter. It can be put into a device manufacturing line that requires strict standards, and can improve the accuracy of photolithography and improve the yield.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing a composite semiconductor substrate manufactured by a conventional dielectric isolation technique.

FIG. 2 is a longitudinal sectional view showing one embodiment of the composite semiconductor substrate of the present invention.

FIG. 3 is a longitudinal sectional view showing one embodiment of the composite semiconductor substrate of the present invention.

FIG. 4 is a view showing a manufacturing process of the composite semiconductor substrate of the present invention.

[Explanation of symbols]

 Reference Signs List 10 semiconductor substrate 11 semiconductor single crystal region 12 insulating film 13 glass material layer 14 semiconductor polycrystalline layer or amorphous semiconductor layer 15 support substrate

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-62-177938 (JP, A) JP-A-4-65857 (JP, A) JP-A-1-138149 (JP, A) (58) Field (Int.Cl. ⁶ , DB name) H01L 21/762 H01L 21/02 H01L 21/316

Claims (1)

(57) [Claims] A composite semiconductor substrate in which one or a plurality of semiconductor single crystal regions separated from each other and a supporting substrate for supporting the semiconductor single crystal regions are joined by a glass material containing silicon, boron and oxygen as main components. In the manufacturing method, the glass material is SiO ₂ and B ₂ obtained by supplying a raw material containing a silicon compound and a boron compound as main components into an oxyhydrogen flame burner having a multi-layer coaxial cylinder shape and burning it.
It is obtained by heating and sintering glassy fine particles containing O ₃ as a main component, and in producing the glassy fine particles, by scanning the oxyhydrogen flame burner a plurality of times on the bonding surface side of the semiconductor single crystal region. A method for manufacturing a composite semiconductor substrate, comprising depositing glassy fine particles on a bonding surface.