JP2820148B2 - Anisotropic conductive film and method for mounting semiconductor device using anisotropic conductive film - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a structure of an anisotropic conductive film and a method for mounting a semiconductor element mounted on an insulating substrate using the anisotropic conductive film.

[0002]

2. Description of the Related Art Conventionally, a mounting structure of a semiconductor device is disclosed in, for example, Japanese Patent Publication No. 57-34657 and
No. 1-94769, a structure as shown in FIG. 2 has been known. In FIG. 2, reference numeral 21 denotes a glass substrate, and reference numeral 22 denotes a glass electrode, which is often formed of ITO. The glass electrode 22 is formed so as to face the electrode 26 formed on the IC chip 27. On the electrode 26, a bump 25 as a metal projection is further formed, and the bump 25 is often formed of Au.
The active surface of the IC chip 27 is often covered with a passivation film in order to improve moisture resistance.

A space between the IC chip 27 and the glass substrate 21 is filled with an anisotropic conductive film 24 containing conductive particles 28. The glass electrodes 22 on the glass substrate 21 are electrically connected to the electrodes 26 on the IC chip 27 and the bumps 25 formed on the electrodes 26 by conductive particles 28 contained in the anisotropic conductive film 24. Have been. As is well known, the anisotropic conductive film basically includes an insulating adhesive and conductive particles. Insulating adhesive is SBR
System or epoxy system in many cases, and the IC chip and the glass substrate are bonded by this insulating adhesive. The conductive particles are often low-melting solder, Ni particles, or Ni-plated plastic particles.

Further, in order to improve the connection reliability, the entire IC mounting portion is often sealed with an insulating resin 23, and such a structure has provided high connection reliability.

[0005]

However, the conventional semiconductor device mounting structure has the following problems.

As described above, the anisotropic conductive film has a structure in which conductive particles are dispersed in an insulating resin, so that the conductive particles are partially concentrated. As shown in FIG. 2, the anisotropic conductive film 24 has a structure in which the IC chip 27 and the glass substrate 21 are filled.
Concentration of the conductive particles 28 dispersed therein occurs, and the insulation between the glass electrodes must be maintained at the short circuit between the glass electrodes 29 and the short circuit between the IC chip and the glass electrode 30. Also, a short circuit occurs between the active surface of the IC chip and the glass electrode, and the IC chip does not operate normally.

[0007] This is an essential problem that cannot be avoided when using an anisotropic conductive film in which conductive particles are dispersed. That is, when the dispersion concentration of the conductive particles is reduced, the probability of the short-circuit phenomenon is reduced, but the probability of the particles existing between the bump and the glass electrode is also reduced, so that the reliability of the connection itself is reduced. In addition, if the dispersion concentration of the conductive particles is increased, the connection reliability is improved, but the probability of a short circuit phenomenon is also increased, so that the semiconductor device cannot function as a mounting structure of the semiconductor device. Generally, the dispersion concentration of the conductive particles is determined in view of the above conditions. However, since it is a stochastic phenomenon, the mounting failure of the semiconductor device due to the short circuit phenomenon cannot be zero. In addition, an attempt to reduce the possibility of a short-circuit phenomenon by reducing the particle diameter of the conductive particles to some extent is also known, but this has not been an essential solution to the problem.

In order to solve such problems, the present invention provides an anisotropic conductive film and a semiconductor element mounting method capable of essentially preventing a short circuit between glass electrodes and a short circuit between a semiconductor element and a glass electrode. It is intended to be.

[0009]

The anisotropic conductive film of the present invention comprises a sheet-like anisotropic conductive film and the sheet-like anisotropic conductive film provided on the sheet-like anisotropic conductive film. And a sheet-like insulating resin having a two-layer structure.

In the method of mounting a semiconductor device according to the present invention, the step of mounting an anisotropic conductive film on the active surface of the semiconductor device includes aligning the semiconductor device with an insulating substrate on which the semiconductor device is mounted. And a step of mounting the semiconductor element on the insulating substrate via the anisotropic conductive film by pressing the semiconductor element against the insulating substrate.

Further, the method of mounting a semiconductor device according to the present invention comprises:
Placing the anisotropic conductive film on an insulating substrate, after aligning the insulating substrate and a semiconductor element mounted on the insulating substrate, by pressing the semiconductor element and the insulating substrate, Mounting a semiconductor element on the insulating substrate via the anisotropic conductive film.

[0012]

According to the present invention, the structure in which the insulating resin is present between the semiconductor element active element forming surface and the wiring pattern formed on the insulating substrate is employed. And no short circuit occurs between them.

[0013]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a sectional view of a mounting structure of a semiconductor device according to the present invention. Reference numeral 1 denotes a substrate, which is often formed of glass, ceramics, resin, or the like, and has at least a surface insulated. After a metal such as Cr—Cu or Ti—Pd is applied to the electrode 6 of the semiconductor element 7, the metal projection 5 is formed. The metal protrusion 5 is made of a metal such as Au, Cu, or solder, and has a thickness of several μm by electroplating, sputtering, vapor deposition, or the like.
It is often formed to a thickness of up to several tens of μm. The wiring pattern 2 is formed on the substrate 1 at a position corresponding to the metal protrusion 5 of the semiconductor element 7. Generally, a metal or metal oxide is used for the wiring pattern.
It may be made of u, Au, Al, ITO, or the like, and may be plated as needed. The resistance may be further reduced by overlapping these wiring patterns. Anisotropic conductive film 1
Numeral 0 is a sheet or liquid, and is made of a mixture of the insulating resin B4 and the conductive particles 9. The metal protrusion 5 and the wiring pattern 2 are electrically connected through the conductive particles 9. The insulating resin B is often an SBR resin, an epoxy resin, an acrylic resin, or the like. As the conductive particles, low melting point solder particles, Ni particles, plastic particles plated with Ni, Au, or the like are often used. Anisotropic conductive film 1
0 is thinner than the metal protrusion 5, and as a result, a gap 8 is formed between the active element forming surface of the semiconductor element 7 and the wiring pattern 2, and this becomes an insulating layer. Further, in order to improve the connection reliability in a moisture-resistant environment, the insulating resin A3 is often applied around the semiconductor element mounting portion and the entire surface of the semiconductor element. The insulating resin A is often an epoxy resin, an acrylic resin, a silicone resin, or the like.
May be the same as The semiconductor element 7 and the substrate 1 are basically bonded with an insulating resin B. The metal protrusion 5 may be formed on the wiring pattern 2 so as to be opposed to the position of the electrode 6 of the semiconductor element 7, and the conductive particles may be formed on the wiring pattern 2 by printing or the like. 2 may be installed so as to be opposed to the position.

FIG. 3 is a front view of the semiconductor device mounting structure of the present invention as viewed from the substrate side. The wiring pattern 2 formed on the substrate 1 is electrically connected to the metal protrusions 5 formed on the semiconductor element 7 through the conductive particles 9 included in the anisotropic conductive film 10. The semiconductor element 7 and the substrate 1 are bonded with an insulating resin B4 in the anisotropic conductive film 10. Anisotropic conductive film 1 is provided between semiconductor element 7 and substrate 1.
Since 0 is thinner than the metal protrusion 5, a gap 8 is formed, and electrical insulation between the substrate 1 and the semiconductor element 7 is maintained.
Further, the anisotropic conductive film 10 does not exist between the wiring patterns 2 immediately below the semiconductor element 7, and the electrical insulation is maintained because of the gap 8. Therefore, between the semiconductor element and the wiring pattern,
No short circuit occurs between the wiring patterns. Reference numeral 3 denotes an insulating resin A for improving reliability in a moisture-resistant environment.

FIG. 4 is a sectional view showing another embodiment of the mounting structure of the semiconductor device according to the present invention. Anisotropic conductive film 10
Are metal protrusions 5 formed on electrodes 6 of semiconductor element 7.
And the wiring pattern 2 formed on the substrate 1. Therefore, a larger gap 8 is obtained between the semiconductor element 7 and the wiring pattern 2 than in the embodiment shown in FIG. 1, and the insulation performance is further improved. Other structures are the same as those of the embodiment of FIG. Further alternatively, the anisotropic conductive film 10 may be present only directly below the metal protrusion 5.

A method for mounting a semiconductor device to obtain the structure shown in FIG. 1 will be described with reference to FIG. As shown in FIG. 8A, an anisotropic conductive film 10 is temporarily attached to the surface of the semiconductor element 7 on the side of the metal projection 5 formed on the electrode 6 of the semiconductor element 7. The anisotropic conductive film 10 is thinner than the metal protrusion 5. Next, the wiring pattern 2 on the substrate 1 and the metal protrusion 5 are aligned so as to be at predetermined positions, and then the semiconductor element 7 and the substrate 1 are pressed against each other. Then, the insulating resin in the anisotropic conductive film is displaced by the metal protrusions 5 and the wiring pattern 2, and the conductive particles 9 directly contact the metal protrusions 5 and the wiring pattern 2, thereby causing electrical conduction. (FIG. 8B) In this state or simultaneously with the pressing, energy such as heat and light is applied so that the insulating resin in the anisotropic conductive film develops adhesive strength. Then, the bonding is completed while the gap 8 is maintained between the semiconductor element and the substrate.

A mounting method for obtaining the structure shown in FIG. 4 will be described with reference to FIG. As shown in FIG. 9A, the anisotropic conductive film 10 is selectively placed on the metal protrusion 5 formed on the electrode 6 of the semiconductor element 7. As a mounting method, an anisotropic conductive film that has been die-cut in advance in accordance with the metal protrusion 5 is aligned with the metal protrusion 5 and temporarily press-bonded. There is a method of attaching an anisotropic conductive film by printing, transfer, or the like. afterwards,
As described in the embodiment of FIG. 8, after the wiring pattern 2 on the substrate 1 and the metal protrusion 5 on the semiconductor element 7 are aligned, pressure bonding is performed. Then, as shown in FIG. 9B, only the gap 8 exists between the semiconductor element 7 and the wiring pattern 2 on the substrate 1 immediately below the active surface.

FIG. 5 is a sectional view showing another embodiment of the mounting structure of the semiconductor device of the present invention. Anisotropic conductive film 10
It is present between the metal projection 5 formed on the electrode 6 of the semiconductor element 7 and the wiring pattern 2 formed on the substrate 1 and on the active surface of the semiconductor element 7. An insulating resin C exists between the anisotropic conductive film and the wiring pattern 2. The insulating resin C11 may be any resin having an insulating property such as an epoxy-based resin, an acrylic-based resin, or a silicone-based resin. It may be the same as the inner insulating resin B.
The insulating resin C does not cause a short circuit between the semiconductor element and the wiring pattern or between the wiring patterns. Other configurations are the same as those described in FIG. The portion of the insulating resin C11 between the insulating resin A and the anisotropic conductive film 10 may not be present.

FIG. 6 is a front view of the mounting structure of the semiconductor device of the present invention as viewed from the substrate side. The wiring pattern 2 formed on the substrate 1 is electrically connected to the metal protrusions 5 formed on the semiconductor element 7 through the conductive particles 9 included in the anisotropic conductive film 10. . The semiconductor element 7 and the substrate 1 are bonded with an insulating resin B4 in the anisotropic conductive film 10. An insulating resin C1 is provided between the semiconductor element 7 and the substrate 1.
1 is filled, and electrical insulation between the substrate 1 and the semiconductor element 7 is maintained. In addition, since the insulating resin C11 is filled also between the wiring patterns 2 immediately below the semiconductor element 7, electrical insulation is maintained. Therefore, no short circuit occurs between the semiconductor element and the wiring pattern or between the wiring patterns. Reference numeral 3 denotes an insulating resin A for improving reliability in a moisture-resistant environment.

FIG. 7 is a sectional view showing another embodiment of the mounting structure of the semiconductor device according to the present invention. Anisotropic conductive film 10
Are metal protrusions 5 formed on electrodes 6 of semiconductor element 7.
And the wiring pattern 2 formed on the substrate 1. For this reason, a wider filling layer of the insulating resin C11 is obtained between the semiconductor element 7 and the wiring pattern 2 than in the embodiment shown in FIG. 6, and the insulating performance is further improved. Other structures are the same as those of the embodiment of FIG. Further alternatively, the anisotropic conductive film 10 may be present only under the metal protrusion 5.

A method of mounting a semiconductor device to obtain the structure shown in FIG. 5 will be described with reference to FIG. As shown in FIG. 10A, an anisotropic conductive film 10 is temporarily attached to the surface of the semiconductor element 7 on the side of the metal projection 5 formed on the electrode 6 of the semiconductor element 7. The anisotropic conductive film 10 is thinner than the metal protrusion 5. next,
An insulating resin C11 is applied or placed on the wiring pattern on the substrate 1. Further, the wiring pattern 2 on the substrate 1 and the metal protrusion 5 are aligned so as to be at predetermined positions, and the semiconductor element 7 and the substrate 1 are pressed against each other. Then, the insulating resin in the anisotropic conductive film 10 is displaced by the metal protrusions 5 and the wiring pattern 2, and the conductive particles 9 come into direct contact with the metal protrusions 5 and the wiring pattern 2, thereby causing electrical conduction. (FIG. 10B) In this state or simultaneously with the pressure welding, energy such as heat and light is applied so that at least the insulating resin in the anisotropic conductive film develops an adhesive force. Then, while the insulating resin C11 is filled between the semiconductor element and the substrate,
The bonding is completed. The insulating resin C may be designed so that the adhesive force is developed at the same time as the adhesive force of the anisotropic conductive film is developed. You can leave it.

Another mounting method of the semiconductor device for obtaining the structure of FIG. 5 will be described with reference to FIG. FIG.
As shown in (a), the anisotropic conductive film 10 is formed on the surface of the semiconductor element 7 on the side of the metal projection 5 formed on the electrode 6 of the semiconductor element 7.
Temporarily attach. The anisotropic conductive film 10 is thinner than the metal protrusion 5 of the semiconductor element 7. The anisotropic conductive film 10 may have a two-layer structure with the insulating resin C11 from the beginning. Alternatively, after the anisotropic conductive film 10 is temporarily attached to the surface of the semiconductor element, the insulating resin C11 is applied thereon. Or you may install. Alternatively, only the conductive particles 9 may be adhered to the insulating resin C11 with a mask / plate facing the metal protrusion 5, and the insulating resin of the anisotropic conductive film may also serve as the insulating resin C11. Next, positioning is performed so that the wiring pattern 2 and the metal protrusion 5 on the substrate 1 are at predetermined positions, and the semiconductor element 7 and the substrate 1 are pressed against each other. Then, the insulating resin C11 is firstly displaced by the metal protrusion 5 and the wiring pattern 2, then the insulating resin in the anisotropic conductive film 10 is displaced, and the conductive particles 9 directly contact the metal protrusion 5 and the wiring pattern 2. As a result, electrical conduction occurs. (FIG. 14 (b)) The mounting procedure and mechanism thereafter are exactly the same as those described in the embodiment of FIG.

Next, a method of mounting a semiconductor device for obtaining the structure of FIG. 7 will be described with reference to FIG. As shown in FIG. 11A, the anisotropic conductive film 10 is temporarily attached selectively only to the vicinity of the metal projection 5 formed on the electrode 6 of the semiconductor element 7 or only to the tip excluding the side surface of the metal projection 5. I do. The method of selective provision is the same as the method described in the embodiment of FIG. The wiring pattern 2 is formed on the substrate 1 so as to be at least opposed to the metal protrusion 5 of the semiconductor element 7. Insulation resin C11
Is applied or installed. Next, the metal protrusion 5 and the wiring pattern 2
And the semiconductor element 7 and the substrate 1 are pressed against each other.
Then, the insulating resin in the anisotropic conductive film 10 is displaced by the metal protrusion 5 and the wiring pattern 2, and the conductive particles 9 come into direct contact with the metal protrusion 5 and the wiring pattern 2, thereby causing electrical conduction. (FIG. 11 (b)) The mounting procedure and mechanism thereafter are exactly the same as those described in the embodiment of FIG.

Further, another mounting method of the semiconductor device for obtaining the structure of FIG. 7 will be described with reference to FIG. FIG.
As shown in (a), an anisotropic conductive film 10 is selectively applied to a portion of the wiring pattern 2 formed on the substrate 1, which is opposed to the metal protrusion 5 formed on the electrode 6 of the semiconductor element 7. An insulating resin C11 is provided or applied to a portion of the substrate 1 facing directly below the other active surface of the semiconductor element, and is temporarily attached. The anisotropic conductive film 10 and the insulating resin C11 may be a sheet-shaped integral member having the above-described positional relationship in advance, or the insulating resin C11 may be placed on the substrate 1 in advance, and then the anisotropic conductive film C11 may be used. 10 may be placed in the position described above,
Conversely, the insulating resin C11 may be placed after the anisotropic conductive film 10 is placed. The method of selectively temporarily attaching the anisotropic conductive film 10 is the same as the method described in the embodiment of FIG. Next, the metal protrusion 5 and the wiring pattern 2 are aligned. The mounting procedure and mechanism thereafter are the same as those described in the embodiment of FIG.

Next, another mounting method of the semiconductor device for obtaining the structure of FIG. 7 will be described with reference to FIG. FIG.
As shown in FIG. 3A, the anisotropic conductive film 10 is temporarily attached selectively to the vicinity of the metal projection 5 formed on the electrode 6 of the semiconductor element 7 or only to the tip excluding the side surface of the metal projection 5.
The method of selectively tacking is the same as that described in the embodiment of FIG. An insulating resin C11 is provided on the active element forming surface of the semiconductor element 7 other than the portion where the anisotropic conductive film 10 is temporarily attached.
Is applied or installed and temporarily attached. The anisotropic conductive film 10 and the insulating resin C11 may be a sheet-shaped integral member having the above-described positional relationship in advance, or the insulating resin C may be placed on the active element forming surface of the semiconductor element 7 in advance. Thereafter, the anisotropic conductive film 10 may be placed at the above-described position, or conversely, after the anisotropic conductive film 10 is placed, the insulating resin C1 may be placed.
1 may be placed. Next, the metal projection 5 and the wiring pattern 2 are aligned. The mounting procedure and mechanism thereafter are the same as those described in the embodiment of FIG.

Another method of mounting the semiconductor device for obtaining the structure shown in FIG. 7 will be described with reference to FIG. FIG.
As shown in FIG. 5A, the anisotropic conductive film 10 is selectively placed in the vicinity of the metal protrusion 5 formed on the electrode 6 of the semiconductor element 7 or only at the tip excluding the side surface of the metal protrusion 5. ing. An insulating resin C11 is mounted on the active element forming surface of the semiconductor element 7 and on the entire surface of the anisotropic conductive film 10 described above. In order to selectively place and temporarily attach the anisotropic conductive film 10, the same method as that described in the embodiment of FIG. 9 may be used, and thereafter, the insulating resin C11 is applied or placed on the entire surface. Good. Alternatively, a two-layer sheet-like substance on which the anisotropic conductive film 10 is previously placed on the insulating resin C11 so as to have the above-described positional relationship is placed on the metal protrusion 5 on the semiconductor element 7.
After aligning the location of the anisotropic conductive film 10 with
The semiconductor element 7 and the two-layer sheet material may be temporarily attached.
In order for the anisotropic conductive film 10 to be present at a selective position to form a two-layer sheet-like material, the anisotropic conductive film that has been die-cut in advance in accordance with the metal protrusions 5 is maintained while maintaining its positional relationship. , The method of installing on the insulating resin C11, the metal protrusion 5
A method in which a liquid anisotropic conductive film is attached to the insulating resin C11 by printing, transfer, or the like, or a method in which only the conductive particles 9 are opposed to the metal protrusions 5 by a mask, a plate, or the like. There is a method in which the insulating resin of the anisotropic conductive film is used as the insulating resin C11 so that the insulating resin is used as the insulating resin. next,
The metal projection 5 and the wiring pattern 2 are aligned, and the mounting procedure and mechanism thereafter are the same as those described in the embodiment of FIG.

Next, another mounting method for obtaining the structure of FIG. 5 will be described with reference to FIG. As shown in FIG.
On the wiring pattern 2 on the substrate 1, at least the semiconductor element 3
The insulating resin 3 is mounted on the entire surface opposite to the above, and the anisotropic conductive film 10 is further mounted thereon. Anisotropic conductive film 10
And the insulating resin C11 may be a sheet-like integral member having a two-layer structure in advance, or the insulating resin C11 may be applied or set in advance on the wiring pattern 2 side, and then the anisotropic conductive film 10 may be applied or set thereon. You may. Alternatively, only the conductive particles 9 may be attached to the insulating resin C11, and the insulating resin of the anisotropic conductive film may also serve as the insulating resin C11. Next, positioning is performed so that the wiring pattern 2 on the substrate 1 and the metal protrusion 5 are at predetermined positions, and the semiconductor element 7 and the substrate 1 are pressed into contact with each other (FIG. 16B). The procedure and mechanism are exactly the same as those described in the embodiment of FIG.

Another method of mounting the semiconductor device to obtain the structure shown in FIG. 7 will be described with reference to FIG. FIG.
As shown in (a), the insulating resin 3 is placed on at least the entire surface of the wiring pattern 2 on the substrate 1 facing the semiconductor element 3, and is formed on the electrode 6 of the semiconductor element 7. Anisotropic conductive film 1 is provided at a portion facing metal protrusion 5.
Place 0. The anisotropic conductive film 10 and the insulating resin C11
The anisotropic conductive film 10 may be present only in the portion facing the metal protrusion 5 on the insulating resin C11. The insulating resin C11 may be a two-layer integrated sheet-like material, or the insulating resin C11 may be applied to the wiring pattern 2 side in advance, or After the installation, the anisotropic conductive film 10 may be applied or installed on the insulating resin C11 only by printing, transferring, transferring, or the like on the portion facing the metal protrusion 5.
Alternatively, only the conductive particles 9 may be adhered to the insulating resin C11 using a mask or a plate facing the metal protrusion 5, and the insulating resin of the anisotropic conductive film may also serve as the insulating resin C11. Next, positioning is performed so that the wiring pattern 2 on the substrate 1 and the metal protrusion 5 are at predetermined positions, and the semiconductor element 7 and the substrate 1 are pressed into contact with each other (FIG. 17B). The procedure and mechanism are exactly the same as those described in the embodiment of FIG.

After mounting by the above mounting method, the outer peripheral portion of the semiconductor element or the entire semiconductor element is often further covered with an insulating resin to improve the resistance to current and moisture.

As described above, the mounting structure of the semiconductor device according to the embodiment of the present invention has a structure in which at least a gap is provided between the active element forming surface of the semiconductor element and the wiring pattern. .

(1) There is a gap between the active surface of the semiconductor element and the wiring pattern immediately therebelow, which serves as an electrical insulating layer. No short circuit occurs.

(2) There is also a gap between the wiring patterns immediately below the active surface of the semiconductor element, which serves as an electrical insulating layer, so that no electrical short circuit occurs between the wiring patterns.

Since the electrical short circuit at the time of mounting can be prevented by the synergistic effect of (1) and (2), the mounting yield is improved.

(3) Since the structure is such that the anisotropic conductive film is present only on the metal protrusions or the thin anisotropic conductive film is present on the entire active surface of the semiconductor element, At the time of alignment, the position of the semiconductor element can be easily recognized (the semiconductor element can be easily seen), so that the efficiency of the alignment operation can be improved.

(4) As described in (3) above, since the actual volume of the anisotropic conductive film is small, the amount of energy required for developing the adhesive force of the anisotropic conductive film is also small. for that reason,
It does not adversely affect semiconductor elements, substrates, and the like. Also,
For the same reason, a device for applying energy to a semiconductor element and a substrate can be reduced in size, and investment in the device can be reduced.

(5) If the anisotropic conductive film is temporarily attached to the semiconductor element side, adhesion of the anisotropic conductive film to the wiring pattern on the substrate side can be minimized. In general, a passivation film is formed on the active element forming surface of a semiconductor element, and there is no problem. However, no passivation film is formed on the wiring pattern side and the passivation film is formed by impurity ions contained in the anisotropic conductive film. Corrosion is a problem. However, according to the present invention, the problem of corrosion of the wiring pattern is practically no problem.

Further, the mounting structure of the semiconductor element according to the embodiment of the present invention has the following effects because the structure in which the anisotropic conductive film is present only in the portions of the metal protrusions and the wiring patterns.

(6) Since the conductive particles are present only in the portions of the metal protrusions and the wiring patterns, the possibility of an electrical short circuit between the active element forming surface of the semiconductor element and the wiring patterns and between the wiring patterns is further reduced. .

(7) Since the active element formation surface of the semiconductor element can be directly viewed from the substrate side, the efficiency of the alignment operation between the semiconductor element and the substrate is further improved.

Further, in the mounting structure of the semiconductor device according to the present invention, the structure in which the anisotropic conductive film thinner than the metal projection is provided on the entire surface of the semiconductor device on the active device forming surface, has the following effects.

(8) When the anisotropic conductive film is temporarily attached to the active element forming surface of the semiconductor element, it is possible to temporarily attach the anisotropic conductive film without paying much attention to the position, so that the efficiency of the temporary attaching operation is significantly improved.

(9) Since the anisotropic conductive film is present on the entire active element formation surface of the semiconductor element, the moisture resistance of the semiconductor element is improved.

In the mounting structure of the semiconductor device according to the present embodiment, at least an insulating resin is provided between the active element forming surface of the semiconductor device and the wiring pattern in place of the above-mentioned gap. It has the same effect as (2) and also has the following effect.

(10) Since the structure between the active element forming surface of the semiconductor element and the wiring pattern on the substrate is completely filled with resin, it is possible to extremely suppress the invasion of humidity in a humidity environment. For this reason, reliability in a moisture-resistant environment can be improved.

(11) Not only the metal projections and wiring patterns of the semiconductor element but also the active surface of the semiconductor element and the substrate opposed thereto contribute to the adhesion between the semiconductor element and the substrate, and the adhesion area can be increased. Therefore, the connection reliability between the semiconductor element and the substrate is further improved.

Further, the mounting structure of the semiconductor device according to the present invention has the following effects because the structure in which the anisotropic conductive film is present only in the metal projection and the wiring pattern of the semiconductor device.

(12) At the time of pressing, the conductive particles are difficult to move due to the presence of the insulating resin in the portions other than the metal protrusions and the wiring pattern portion of the semiconductor element, and the conductive particles are more difficult to move between the active element forming surface of the semiconductor element and the wiring pattern. In addition, the possibility of an electrical short circuit between the wiring patterns is further reduced.

(13) Since only one material, an insulating resin, exists between the active element forming surface of the semiconductor element and the substrate facing the active element forming surface, the difference in thermal expansion coefficient of the material, which is a problem when mounting the semiconductor element, Since it is only necessary to consider the material characteristics of the insulating resin material with respect to the reduction in reliability, the material can be easily selected.

Further, the mounting structure of the semiconductor element according to the present invention has the following effects because the anisotropic conductive film is present on the entire surface of the active element forming surface of the semiconductor element and the insulating resin is further present.

(14) When temporarily attaching the anisotropic conductive film and the insulating resin, it is not necessary to pay much attention to the alignment, and the efficiency of the attaching work is improved.

[0052]

According to the structure of the present invention, there is an insulating resin between the active surface of the semiconductor element and the wiring pattern immediately therebelow, which serves as an electrical insulating layer. No electrical short circuit occurs between the wiring patterns.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a mounting structure of a semiconductor device according to the present invention.

FIG. 2 is a cross-sectional view showing a mounting structure of a conventional semiconductor device.

FIG. 3 is a front view of the mounting structure of the semiconductor device according to the present invention as viewed from the substrate side.

FIG. 4 is a cross-sectional view showing a mounting structure of a semiconductor device according to the present invention.

FIG. 5 is a cross-sectional view showing a mounting structure of a semiconductor device according to the present invention.

FIG. 6 is a front view of the mounting structure of the semiconductor device according to the present invention as viewed from the substrate side.

FIG. 7 is a sectional view showing a mounting structure of a semiconductor device according to the present invention.

8A and 8B are schematic cross-sectional views illustrating a method for mounting a semiconductor device according to the present invention.

9A and 9B are schematic cross-sectional views illustrating a method for mounting a semiconductor device according to the present invention.

10A and 10B are schematic cross-sectional views illustrating a method for mounting a semiconductor device according to the present invention.

11A and 11B are schematic cross-sectional views illustrating a method for mounting a semiconductor device according to the present invention.

12A and 12B are schematic cross-sectional views illustrating a method for mounting a semiconductor device according to the present invention.

13A and 13B are schematic cross-sectional views illustrating a method for mounting a semiconductor device according to the present invention.

14A and 14B are schematic cross-sectional views illustrating a method for mounting a semiconductor device according to the present invention.

15A and 15B are schematic cross-sectional views illustrating a method for mounting a semiconductor device according to the present invention.

16A and 16B are schematic cross-sectional views illustrating a method for mounting a semiconductor device according to the present invention.

17A and 17B are schematic cross-sectional views illustrating a method for mounting a semiconductor device according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Wiring pattern 3 ... Insulating resin A 4 ... Insulating resin B 5 ... Metal protrusion 6 ... Electrode 7 ... Semiconductor element 8 ... Void 9 ... Conductive particle 10 ... Anisotropic conductive film 11 ... Insulating resin C21 ... Glass Substrate 22 ... Glass electrode 23 ... Insulating resin 24 ... Anisotropic conductive film 25 ... Bump 26 ... Electrode 27 ... IC chip 28 ... Conductive particle 29 ... Short circuit between glass electrodes 30 ... Short circuit between IC chip and glass electrode

Continuation of front page (56) References JP-A-60-116157 (JP, A) JP-A-1-135344 (JP, A) JP-A 57-35051 (JP, U) JP-A 62-107443 (JP) , U) Actually open 1987-118266 (JP, U) Actually open 1986-156239 (JP, U) Actually open 1987-61835 (JP, U) Actually open 1988-1988 (JP, U) Actually open 62-47128 (JP, U) Japanese Utility Model Showa 61-166534 (JP, U) (58) Field surveyed (Int. Cl. ⁶ , DB name) H01L 21/60 311

Claims (3)

(57) [Claims] 1. A sheet-like anisotropic conductive film, and a sheet-like insulating resin provided on the sheet-like anisotropic conductive film and having a two-layer structure with the sheet-like anisotropic conductive film; An anisotropic conductive film composed of: 2. A step of placing the anisotropic conductive film according to claim 1 on an active surface of a semiconductor device, and after positioning the semiconductor device and an insulating substrate on which the semiconductor device is mounted, the semiconductor device And mounting the semiconductor element on the insulating substrate via the anisotropic conductive film by press-contacting the insulating substrate with the insulating substrate. 3. The step of mounting the anisotropic conductive film according to claim 1, on an insulating substrate, after aligning the insulating substrate and a semiconductor element mounted on the insulating substrate, A method of mounting the semiconductor element on the insulating substrate via the anisotropic conductive film by pressing the insulating element against the insulating substrate.