JP2808996B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JP2808996B2
JP2808996B2 JP4198286A JP19828692A JP2808996B2 JP 2808996 B2 JP2808996 B2 JP 2808996B2 JP 4198286 A JP4198286 A JP 4198286A JP 19828692 A JP19828692 A JP 19828692A JP 2808996 B2 JP2808996 B2 JP 2808996B2
Authority
JP
Japan
Prior art keywords
chip
axis
coordinates
wafer
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4198286A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0645428A (ja
Inventor
宣夫 飯島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4198286A priority Critical patent/JP2808996B2/ja
Priority to EP92115170A priority patent/EP0580895A2/en
Publication of JPH0645428A publication Critical patent/JPH0645428A/ja
Application granted granted Critical
Publication of JP2808996B2 publication Critical patent/JP2808996B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10P72/06
    • H10W46/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54453Marks applied to semiconductor devices or parts for use prior to dicing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP4198286A 1992-07-24 1992-07-24 半導体装置の製造方法 Expired - Lifetime JP2808996B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4198286A JP2808996B2 (ja) 1992-07-24 1992-07-24 半導体装置の製造方法
EP92115170A EP0580895A2 (en) 1992-07-24 1992-09-04 Method of mapping a tested semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4198286A JP2808996B2 (ja) 1992-07-24 1992-07-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH0645428A JPH0645428A (ja) 1994-02-18
JP2808996B2 true JP2808996B2 (ja) 1998-10-08

Family

ID=16388600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4198286A Expired - Lifetime JP2808996B2 (ja) 1992-07-24 1992-07-24 半導体装置の製造方法

Country Status (2)

Country Link
EP (1) EP0580895A2 (enExample)
JP (1) JP2808996B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE503038C2 (sv) * 1993-07-09 1996-03-11 Sandvik Ab Diamantbelagt skärande verktyg av hårdmetall eller keramik
EP2282338B1 (en) * 2004-04-19 2014-08-06 STMicroelectronics Srl Structures for indexing dice
EP1791169A4 (en) * 2004-08-31 2011-03-02 Nikon Corp ALIGNMENT PROCESS, DEVELOPMENT SYSTEM, SUBSTRATED REPEATABILITY MEASURING METHOD, POSITION MEASURING METHOD, EXPOSURE METHOD, SUBSTRATE PROCESSING DEVICE, MEASURING METHOD AND MEASURING DEVICE
CN102934216B (zh) * 2010-05-04 2016-08-03 韩美半导体株式会社 用于对准半导体材料的方法
CN103065012B (zh) * 2012-12-31 2016-08-24 中国电子科技集团公司第四十五研究所 一种晶圆Map显示模型的创建方法及其使用方法
CN112115677B (zh) * 2019-06-21 2024-07-12 比亚迪半导体股份有限公司 芯片修调的方法、装置、存储介质和电子设备
CN113625149B (zh) * 2020-05-07 2024-07-16 美商矽成积体电路股份有限公司 异常芯片检测方法与异常芯片检测系统
CN112103233B (zh) * 2020-09-25 2023-08-22 广东先导微电子科技有限公司 确定晶片掰片位置的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889836A (ja) * 1981-11-24 1983-05-28 Hitachi Ltd ウエハマツピング装置
JPS6053042A (ja) * 1983-09-02 1985-03-26 Toshiba Corp ウェハマップの作成方法
JPS6178134A (ja) * 1984-09-26 1986-04-21 Hitachi Ltd 半導体プロセスにおける位置合せ方法およびこれを用いたシステム
JPH067561B2 (ja) * 1986-11-27 1994-01-26 東京エレクトロン株式会社 半導体ウエハチツプの位置合わせ方法
JPS6468937A (en) * 1987-09-10 1989-03-15 Canon Kk Chip-map formation
JPH0425145A (ja) * 1990-05-21 1992-01-28 Tokyo Electron Ltd 半導体測定装置

Also Published As

Publication number Publication date
EP0580895A3 (enExample) 1994-03-09
JPH0645428A (ja) 1994-02-18
EP0580895A2 (en) 1994-02-02

Similar Documents

Publication Publication Date Title
US11761904B2 (en) Smart defect calibration system in semiconductor wafer manufacturing
JP4951811B2 (ja) 半導体装置の製造方法
JP3639636B2 (ja) 半導体ウェハの不良解析装置及び不良解析方法
US6084679A (en) Universal alignment marks for semiconductor defect capture and analysis
US4985676A (en) Method and apparatus of performing probing test for electrically and sequentially testing semiconductor device patterns
US7894660B2 (en) Image processing alignment method and method of manufacturing semiconductor device
US11669957B2 (en) Semiconductor wafer measurement method and system
JP2808996B2 (ja) 半導体装置の製造方法
US6598194B1 (en) Test limits based on position
JPH10267993A (ja) 不良解析装置
US12062166B2 (en) Method and system for diagnosing a semiconductor wafer
US6768961B2 (en) System and method for analyzing error information from a semiconductor fabrication process
EP0225257B1 (en) System for inspecting exposure pattern data of semiconductor integrated circuit device
US6423555B1 (en) System for determining overlay error
JP3247823B2 (ja) 欠陥検査方法およびその装置並びに薄膜磁気ヘッド用の素子の製造方法
JP2000243794A (ja) 半導体ウエハの解析方法
JP2595962B2 (ja) 半導体装置
CN113148946B (zh) 一种晶圆低可靠性失效管芯的标注方法和装置
KR100716552B1 (ko) 다이 어태치 방법
US6782500B1 (en) Statistical decision system
US20250052808A1 (en) Wafer analyzing device and wafer analyzing system
CN116993669B (zh) 扫描电镜图像缺陷的确定方法及装置
JPH0680626B2 (ja) 電子線描画方法
JP2002134569A (ja) テストデータ解析装置、テストデータ解析方法および記録媒体
CN118311051A (zh) 缺陷检测方法、装置、系统及计算机可读介质

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 19980630