JP2790582B2 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JP2790582B2
JP2790582B2 JP4301312A JP30131292A JP2790582B2 JP 2790582 B2 JP2790582 B2 JP 2790582B2 JP 4301312 A JP4301312 A JP 4301312A JP 30131292 A JP30131292 A JP 30131292A JP 2790582 B2 JP2790582 B2 JP 2790582B2
Authority
JP
Japan
Prior art keywords
water
semiconductor device
semiconductor element
cooled radiator
metal plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4301312A
Other languages
Japanese (ja)
Other versions
JPH06151667A (en
Inventor
良忠 米田
和弘 三木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4301312A priority Critical patent/JP2790582B2/en
Publication of JPH06151667A publication Critical patent/JPH06151667A/en
Application granted granted Critical
Publication of JP2790582B2 publication Critical patent/JP2790582B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】この発明は、水冷式放熱器を有す
る半導体装置の冷却方法の改良に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a method for cooling a semiconductor device having a water-cooled radiator.

【0002】[0002]

【従来の技術】従来の水冷式の半導体装置の構成につい
て図4及び図5を参照しながら説明する。図4及び図5
は、例えば実開昭55−154556号公報に示された
従来の半導体装置の断面を示す図及び従来の半導体装置
の水冷式放熱器を示す斜視図である。
2. Description of the Related Art The structure of a conventional water-cooled semiconductor device will be described with reference to FIGS. 4 and 5
1 is a diagram showing a cross section of a conventional semiconductor device disclosed in, for example, Japanese Utility Model Laid-Open No. 55-154556, and a perspective view showing a water-cooled radiator of the conventional semiconductor device.

【0003】図4及び図5において、1は半導体素子、
10は水冷式放熱器(水冷ブロック)、4は水路、5は
水路4の出入口に装着されたホース取付用のホース継手
である。
In FIGS. 4 and 5, reference numeral 1 denotes a semiconductor element;
Reference numeral 10 denotes a water-cooled radiator (water-cooled block), 4 denotes a water channel, and 5 denotes a hose joint for mounting a hose attached to the entrance of the water channel 4.

【0004】図4に示すように、半導体素子1は図示の
矢印の向きに圧接力が加えられて使用される。図4にお
いては圧接力の保持機構は省略されている。なお、図5
(b)は同図(a)のA−A部で切断した断面図であ
る。
As shown in FIG. 4, a semiconductor element 1 is used by applying a pressing force in the direction of the arrow shown in the figure. In FIG. 4, the holding mechanism of the pressing force is omitted. FIG.
FIG. 2B is a cross-sectional view taken along a line AA in FIG.

【0005】一般に、半導体素子1を動作させると、そ
の電圧降下のため電力損失が発生する。この電力損失
は、半導体素子1の内部温度を上昇させ、この温度上昇
が大きいと半導体素子1の性能が著しく低下し使用でき
なくなる。そのため半導体装置においては適当な放熱器
を使用し半導体素子1の発熱を外部に逃して温度上昇を
規定の値に押さえている。
Generally, when the semiconductor element 1 is operated, a power loss occurs due to the voltage drop. This power loss raises the internal temperature of the semiconductor element 1, and if the temperature rise is large, the performance of the semiconductor element 1 is significantly reduced, and the semiconductor element 1 cannot be used. For this reason, in a semiconductor device, an appropriate radiator is used to release heat generated by the semiconductor element 1 to the outside, thereby suppressing a temperature rise to a specified value.

【0006】図4に示した従来の水冷式の半導体装置に
おいては、半導体素子1の電力損失はその両面から水冷
式放熱器(水冷ブロック)10に伝導し、さらに水路4
に水を流すことによりこれに吸収されて外部へ放出され
る。
In the conventional water-cooled semiconductor device shown in FIG. 4, the power loss of the semiconductor element 1 is transmitted from both sides to a water-cooled radiator (water-cooled block) 10,
The water is absorbed by the water and released to the outside.

【0007】放熱効果は水路4の長さ、形状と関係し、
1キロワット(KW)〜数キロワットに及ぶ電力損失を
放熱させるためには、例えば図5(a)に示すようにコ
の字状の水路4を形成することが必要となっていた。
The heat radiation effect is related to the length and shape of the water channel 4,
In order to dissipate a power loss ranging from 1 kilowatt (KW) to several kilowatts, for example, it is necessary to form a U-shaped water channel 4 as shown in FIG.

【0008】[0008]

【発明が解決しようとする課題】上述したような従来の
半導体装置では、水冷式放熱器(水冷ブロック)10に
おける水路4の形成は一般に機械加工によって行われる
が、図5(a)に示すように複雑な形状になると加工時
間が極めて長くなりコスト高となる他、水冷ブロックの
重量も重くなるという問題点があった。また、上記機械
加工法では水路4を滑らかに形成することが困難であ
り、そのため同じ水量を流すために必要な水圧が高く、
すなわち損失水頭(loss of head)が大きくなるという
問題点があった。
In the conventional semiconductor device as described above, the formation of the water passage 4 in the water-cooled radiator (water-cooled block) 10 is generally performed by machining, as shown in FIG. If the shape becomes complicated, the processing time becomes extremely long and the cost increases, and the weight of the water-cooling block also increases. In addition, it is difficult to form the water channel 4 smoothly by the above-mentioned machining method, so that the water pressure required for flowing the same amount of water is high,
That is, there is a problem that a loss of head becomes large.

【0009】この発明は、上記のような問題点を解決す
るためになされたもので、軽量化、損失水頭の減少、コ
ストの低減を図ることができる半導体装置を得ることを
目的とする。
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has as its object to provide a semiconductor device capable of reducing the weight, reducing the head loss, and reducing the cost.

【0010】[0010]

【課題を解決するための手段】この発明の請求項1に係
る半導体装置は、半導体素子に圧接して前記半導体素子
を冷却する水冷式放熱器を備えた半導体装置において、
前記水冷式放熱器は一対の金属薄板を接合して構成し、
前記接合部の一部に水路を形成し、かつ、前記半導体素
子と前記水冷式放熱器の間に大きさが少なくとも前記水
路まで延びる金属板を介在したものである。
According to a first aspect of the present invention, there is provided a semiconductor device having a water-cooled radiator for cooling the semiconductor element by pressing against the semiconductor element.
The water-cooled radiator is configured by joining a pair of thin metal plates,
Forming a water channel in a part of the junction , and
The size of at least the water between the
A metal plate extending to the road is interposed .

【0011】[0011]

【0012】[0012]

【作用】この発明の請求項1に係る半導体装置において
は、水冷式放熱器は金属薄板を2枚使用することにより
形成されるので軽量化が可能となり、また製作過程にお
いてなめらかな水路を容易に形成できることにより損失
水頭も大幅に減少させることができる。さらに、複雑な
機械加工が不要となるのでコストも従来の加工法にくら
べきわめて安くできるというメリットがある。また、半
導体素子と水冷式放熱器の間に介在させた金属板により
放熱性をさらに高めることができる。
In the semiconductor device according to the first aspect of the present invention, since the water-cooled radiator is formed by using two thin metal plates, the weight can be reduced, and a smooth water channel can be easily formed in the manufacturing process. The formation can also greatly reduce the head loss. Further, there is an advantage that the cost can be extremely reduced as compared with the conventional processing method since complicated machining is not required. Also, half
With a metal plate interposed between the conductor element and the water-cooled radiator
Heat dissipation can be further improved.

【0013】[0013]

【0014】[0014]

【実施例】 実施例1.以下、この発明の実施例1の構成について図
1及び図2を参照しながら説明する。図1は、この発明
の実施例1の断面を示す図である。また、図2は、この
発明の実施例1の水冷式放熱器を示す図である。なお、
図2(b)は、同図(a)のA−A部で切断した断面図
である。
Embodiment 1 Hereinafter, the configuration of the first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a diagram showing a cross section of Embodiment 1 of the present invention. FIG. 2 is a diagram showing a water-cooled radiator according to Embodiment 1 of the present invention. In addition,
FIG. 2B is a cross-sectional view taken along the line AA in FIG.

【0015】図1及び図2において、1は半導体素子、
2及び3は金属薄板、4は水路、5は水路4の出入口に
装着されたホース継手、10Aは水冷式放熱器である。
なお、各図中、同一符号は同一又は相当部分を示す。
1 and 2, reference numeral 1 denotes a semiconductor element;
Reference numerals 2 and 3 denote metal thin plates, 4 denotes a water channel, 5 denotes a hose joint attached to the entrance of the water channel 4, and 10A denotes a water-cooled radiator.
In the drawings, the same reference numerals indicate the same or corresponding parts.

【0016】金属薄板2及び3は、例えば銅からなり、
金属薄板2の厚さは2.0〜3.0mm程度、金属薄板
3の厚さは1.0〜1.5mm程度である。
The metal sheets 2 and 3 are made of, for example, copper,
The thickness of the thin metal plate 2 is about 2.0 to 3.0 mm, and the thickness of the thin metal plate 3 is about 1.0 to 1.5 mm.

【0017】水路4の形成方法としては、一方の金属薄
板3を予めプレス加工で水路4に相当する部分を形成
し、他方の金属薄板2に圧着又は接着させる。なお、こ
の方法以外に、2枚の金属薄板を圧着した後、水路4を
形成する部分へ空気を圧入する方法などがある。
As a method of forming the water channel 4, a portion corresponding to the water channel 4 is formed in advance by pressing one of the metal sheets 3, and the metal sheet 3 is pressed or bonded to the other metal sheet 2. In addition to this method, there is a method in which air is press-fitted into a portion where the water channel 4 is formed after two metal sheets are pressed.

【0018】半導体素子1は、図1に示す矢印の向きに
圧接力が加えられて使用される。図1においては、圧接
力の保持機構は本発明の実施例1の説明に直接係らない
ので省略する。
The semiconductor element 1 is used with a pressing force applied in the direction of the arrow shown in FIG. In FIG. 1, the pressing force holding mechanism is omitted because it does not directly relate to the description of the first embodiment of the present invention.

【0019】図1に示すように構成した半導体装置にお
いて、半導体素子1で発生した電力損失はその両側から
熱となって放散され図示の矢印の向き(熱流)に流れ水
路4を流れる水に吸収される。
In the semiconductor device constructed as shown in FIG. 1, the power loss generated in the semiconductor element 1 is dissipated as heat from both sides and flows in the direction of the arrow (heat flow) shown in FIG. Is done.

【0020】この発明の実施例1は、前述したように、
半導体素子1の片面又は両面に水冷式放熱器10Aを圧
接してなる半導体装置において、該水冷式放熱器10A
は2枚の金属薄板2及び3を圧着又は接着により接合し
て形成され、接合部の一部に水路4を形成したものであ
る。
The first embodiment of the present invention, as described above,
In a semiconductor device having a water-cooled radiator 10A pressed against one or both surfaces of the semiconductor element 1, the water-cooled radiator 10A
Is formed by joining two metal thin plates 2 and 3 by pressure bonding or bonding, and forms a water passage 4 in a part of the joint.

【0021】すなわち、この発明の実施例1に係る水冷
式の半導体装置は、従来の水冷ブロック10のかわりに
図2に示されるような2枚の比較的薄い金属薄板2,3
を圧着接合して形成され、接合部の一部に水路4を形成
した水冷式放熱器10Aを用いたものであり、図1に示
す構成の半導体装置を提供せんとするものである。従っ
て、軽量化され、なめらかな水路4を形成し損失水頭が
減少される。また、コストの安いものが得られるという
効果を奏する。
That is, the water-cooled semiconductor device according to the first embodiment of the present invention has two relatively thin metal sheets 2 and 3 as shown in FIG.
And a water-cooled radiator 10A in which a water passage 4 is formed in a part of the joint portion, and a semiconductor device having the configuration shown in FIG. 1 is provided. Therefore, the weight is reduced, the smooth water channel 4 is formed, and the head loss is reduced. Also, there is an effect that a low-cost product can be obtained.

【0022】実施例2.前述した実施例1の場合、熱の
経路を考えると金属薄板2は薄板であるため伝導熱抵抗
が比較的大きくなり大電力の放熱には限度がある。これ
をさらに改善するために実施例2においては、図3に示
すように、半導体素子1と金属薄板2の間に別の金属板
6を挿入したものである。この金属板6は、例えば銅か
らなり、その厚さは3.0〜5.0mm程度である。
Embodiment 2 FIG. In the case of the first embodiment described above, considering the heat path, the metal thin plate 2 is a thin plate, so that the conduction thermal resistance is relatively large, and there is a limit to the heat radiation of large power. In order to further improve this, in the second embodiment, another metal plate 6 is inserted between the semiconductor element 1 and the thin metal plate 2 as shown in FIG. The metal plate 6 is made of, for example, copper, and has a thickness of about 3.0 to 5.0 mm.

【0023】この金属板6の役割は重要であり水路4の
上まで十分に熱を伝導させる作用をする。金属板6の板
厚は任意にとりうるが、これは発熱量との関連できめれ
ばよい。金属薄板2が薄くても金属板6の存在により実
施例2に係る半導体装置は極めて高性能の冷却が可能と
なるのである。
The role of the metal plate 6 is important, and serves to conduct heat sufficiently to the upper part of the water channel 4. The thickness of the metal plate 6 can be arbitrarily set, but this may be determined in relation to the calorific value. Even if the thin metal plate 2 is thin, the semiconductor device according to the second embodiment can perform extremely high-performance cooling due to the presence of the metal plate 6.

【0024】実施例2は、半導体素子1と金属薄板2の
間にその端面が少なくとも水路4の上部に延びるような
大きさを有する金属板6を介在させることにより、熱抵
抗特性の改善効果を奏する。つまり、より放熱性が高ま
るという効果を奏する。
In the second embodiment, the effect of improving the thermal resistance characteristic is improved by interposing a metal plate 6 having such a size that its end face extends at least above the water channel 4 between the semiconductor element 1 and the thin metal plate 2. Play. That is, there is an effect that heat dissipation is further improved.

【0025】実施例2は、半導体素子1の両側に水冷式
放熱器10Aを有する半導体装置に限定されるものでは
なく、半導体素子1の片側のみに水冷式放熱器10Aを
有するものでもよい。
The second embodiment is not limited to the semiconductor device having the water-cooled radiator 10A on both sides of the semiconductor element 1, but may have the water-cooled radiator 10A on only one side of the semiconductor element 1.

【0026】[0026]

【発明の効果】この発明の請求項1に係る半導体装置
は、以上説明したように、半導体素子に圧接して前記半
導体素子を冷却する水冷式放熱器を備えた半導体装置に
おいて、前記水冷式放熱器は一対の金属薄板を接合して
構成し、前記接合部の一部に水路を形成し、かつ、前記
半導体素子と前記水冷式放熱器の間に大きさが少なくと
も前記水路まで延びる金属板を介在したので、軽量化を
図ることができ、なめらかな水路を形成できるので損失
水頭を減少することができる。また、コストの低減を図
ることができるという効果を奏する。さらに、より放熱
性を高めることができるという効果を奏する。
As described above, the semiconductor device according to the first aspect of the present invention includes a water-cooled radiator that presses against a semiconductor element and cools the semiconductor element. The vessel is formed by joining a pair of metal sheets, forming a water channel in a part of the joint , and
When the size is small between the semiconductor element and the water-cooled radiator
Also , since the metal plate extending to the water channel is interposed , the weight can be reduced, and a smooth water channel can be formed, so that the head loss can be reduced. Further, there is an effect that the cost can be reduced. More heat dissipation
The effect that the property can be improved is produced.

【0027】[0027]

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明の実施例1の断面を示す図である。FIG. 1 is a diagram showing a cross section of a first embodiment of the present invention.

【図2】この発明の実施例1を示す斜視図である。FIG. 2 is a perspective view showing Embodiment 1 of the present invention.

【図3】この発明の実施例2の断面を示す図である。FIG. 3 is a diagram showing a cross section of a second embodiment of the present invention.

【図4】従来の半導体装置の断面を示す図である。FIG. 4 is a diagram showing a cross section of a conventional semiconductor device.

【図5】従来の半導体装置の水冷式放熱器を示す斜視図
である。
FIG. 5 is a perspective view showing a water-cooled radiator of a conventional semiconductor device.

【符号の説明】[Explanation of symbols]

1 半導体素子 2 金属薄板 3 金属薄板 4 水路 5 ホース継手 6 金属板 10A 水冷式放熱器 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Metal thin plate 3 Metal thin plate 4 Waterway 5 Hose joint 6 Metal plate 10A Water-cooled radiator

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 半導体素子に圧接して前記半導体素子を
冷却する水冷式放熱器を備えた半導体装置において、前
記水冷式放熱器は一対の金属薄板を接合して構成し、前
記接合部の一部に水路を形成し、かつ、前記半導体素子
と前記水冷式放熱器の間に大きさが少なくとも前記水路
まで延びる金属板を介在したことを特徴とする半導体装
置。
1. A semiconductor device having a water-cooled radiator that cools the semiconductor element by pressing against the semiconductor element, wherein the water-cooled radiator is formed by joining a pair of metal thin plates, Forming a water channel in the portion and the semiconductor element
And at least the waterway between the water-cooled radiator and
A semiconductor device comprising a metal plate extending up to the center .
JP4301312A 1992-11-11 1992-11-11 Semiconductor device Expired - Lifetime JP2790582B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4301312A JP2790582B2 (en) 1992-11-11 1992-11-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4301312A JP2790582B2 (en) 1992-11-11 1992-11-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH06151667A JPH06151667A (en) 1994-05-31
JP2790582B2 true JP2790582B2 (en) 1998-08-27

Family

ID=17895339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4301312A Expired - Lifetime JP2790582B2 (en) 1992-11-11 1992-11-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2790582B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104959172A (en) * 2015-05-22 2015-10-07 北京联合大学 Microcirculation concept-based active heat dissipating three-dimensional chip

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6996033B2 (en) 2002-06-19 2006-02-07 Advanced Research Corporation Optical path for a thermal-assisted magnetic recording head

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0632701Y2 (en) * 1987-06-02 1994-08-24 旭硝子株式会社 Q switch element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104959172A (en) * 2015-05-22 2015-10-07 北京联合大学 Microcirculation concept-based active heat dissipating three-dimensional chip

Also Published As

Publication number Publication date
JPH06151667A (en) 1994-05-31

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