JP2787072B2 - Ultraviolet laser light detection method - Google Patents

Ultraviolet laser light detection method

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Publication number
JP2787072B2
JP2787072B2 JP4538196A JP4538196A JP2787072B2 JP 2787072 B2 JP2787072 B2 JP 2787072B2 JP 4538196 A JP4538196 A JP 4538196A JP 4538196 A JP4538196 A JP 4538196A JP 2787072 B2 JP2787072 B2 JP 2787072B2
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JP
Japan
Prior art keywords
general formula
laser light
ultraviolet laser
light
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4538196A
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Japanese (ja)
Other versions
JPH09210779A (en
Inventor
正昭 鈴木
善徳 中田
秀明 永井
猛 奥谷
正志 村上
信男 櫛引
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
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Agency of Industrial Science and Technology
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Priority to JP4538196A priority Critical patent/JP2787072B2/en
Priority to US08/795,205 priority patent/US5808307A/en
Publication of JPH09210779A publication Critical patent/JPH09210779A/en
Application granted granted Critical
Publication of JP2787072B2 publication Critical patent/JP2787072B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は紫外レーザ光の検出
方法に関する。
The present invention relates to a method for detecting an ultraviolet laser beam.

【0002】[0002]

【従来の技術】レーザ技術の進展に伴い、広範囲の波長
領域においてレーザ光が使用されるようになった。近
年、レーザ光は高出力化が進められ、情報の伝送、記録
・再生のみならず、半導体製造技術に必須の微細加工を
始めとする材料加工技術、近視の治療、眼内レンズ装着
後の第二時白内障の治療等医療等分野でも使用されるよ
うになった。紫外光を用いる加工技術は半導体製造プロ
セスのみならず、レーザーCVDを始めとしてレーザを
使用するプロセスが、低温プロセスであるため生成物の
損傷が少ない、レーザ光を絞り局所照射による選択加工
などの利点のためその用途は拡大している。レーザ光は
光強度が強く、目に入射した場合は重大な損傷を与える
ため、その使用には注意が必要とされている(矢島等
他、新版レーザーハンドブック、朝倉書店、198
9)。紫外、近紫外レーザ光の検出方法としては、光電
管、pnフォトダイオードで光量を銀塩写真でパターン
を検出する方法等が知られている。アルゴンレーザの様
に可視光を発振するレーザでは、例えば白紙を光路中に
挿入し、レーザ光を反射させて光学系の光軸調製が行え
るが、紫外レーザ光は目で感知することが出来ないた
め、容易に行えない。そのため、光学系に別途可視光レ
ーザを設置しこれを用いて行わざるを得なかった。
2. Description of the Related Art With the development of laser technology, laser light has been used in a wide wavelength range. In recent years, the output of laser light has been increased, and not only information transmission, recording and reproduction, but also material processing technology such as microfabrication essential for semiconductor manufacturing technology, myopia treatment, It has also been used in the medical field, such as the treatment of cataracts. The processing technology using ultraviolet light is not only a semiconductor manufacturing process, but also a process using laser such as laser CVD is a low-temperature process, so there is little damage to the product. Therefore, its use is expanding. Since laser light has a high light intensity and seriously damages eyes, it must be used with caution (Yajima et al., New Laser Handbook, Asakura Shoten, 198
9). As a method for detecting ultraviolet or near-ultraviolet laser light, there is known a method of detecting the amount of light using a photoelectric tube or a pn photodiode and detecting a pattern using silver halide photography. With a laser that emits visible light, such as an argon laser, for example, white paper is inserted into the optical path and the laser light is reflected to adjust the optical axis of the optical system, but the ultraviolet laser light cannot be detected by eyes Therefore, it cannot be easily performed. Therefore, a visible light laser was separately provided in the optical system, and it was necessary to use the laser.

【0003】[0003]

【発明が解決しようとする課題】本発明は、紫外レーザ
光を簡単に検出し得る方法を提供することをその課題と
する。
SUMMARY OF THE INVENTION An object of the present invention is to provide a method capable of easily detecting an ultraviolet laser beam.

【0004】[0004]

【課題を解決するための手段】本発明者らは、前記課題
を解決すべく鋭意研究を重ねた結果、本発明を完成する
に至った。即ち、本発明によれば、下記一般式(1)又
は一般式(2)で表わされる繰返し構造単位を主鎖中に
含有するケイ素含有高分子化合物を検出手段として用い
ることを特徴とする紫外線レーザ光の検出方法が提供さ
れる。 一般式(1):
Means for Solving the Problems The present inventors have conducted intensive studies to solve the above-mentioned problems, and as a result, have completed the present invention. That is, according to the present invention, an ultraviolet laser characterized in that a silicon-containing polymer compound containing a repeating structural unit represented by the following general formula (1) or (2) in a main chain is used as detection means. A method for detecting light is provided. General formula (1):

【化1】 (式中、R1及びR2は同一又は異なっていてもよく、水
素又は低級脂肪族基を表わし、R3及びR4は同一又は異
なっていてもよく、芳香族基又は低級脂肪族基を表わす
が、R3及びR4の少なくとも一方は芳香族基を表わすも
のとする) 一般式(2):
Embedded image (Wherein R 1 and R 2 may be the same or different and represent hydrogen or a lower aliphatic group, and R 3 and R 4 may be the same or different and represent an aromatic group or a lower aliphatic group. Wherein at least one of R 3 and R 4 represents an aromatic group.) General formula (2):

【化2】 (式中、R5及びR6は同一又は異ってもよく、芳香族基
又は低級脂肪族基を表わすが、R5及びR6の少なくとも
一方は芳香族基を表わすものとする)
Embedded image (Wherein, R 5 and R 6 may be the same or different and represent an aromatic group or a lower aliphatic group, but at least one of R 5 and R 6 represents an aromatic group)

【0005】[0005]

【発明の実施の形態】本発明で用いる紫外レーザ光検出
手段は、前記一般式(1)又は一般式(2)で表わされ
る繰り返し構造単位を主鎖中に含有するケイ素含有高分
子化合物からなるものである。前記一般式(1)におい
て、R1及びR2は同一又は異っていてもよく、水素又は
低級脂肪族基を示すが、この場合の低級脂肪族基として
は、炭素数1〜6、好ましくは1〜4のアルキル基、例
えば、メチル、エチル、プロピル、ブチル等が挙げられ
る。好ましいR1及びR2は水素又はメチルである。前記
一般式(1)において、R3及びR4は同一又は異ってい
てもよく、芳香族基又は低級脂肪族基であるが、その少
なくとも一方は芳香族基である。前記一般式(2)にお
いて、R5及びR6は同一又は異っていてもよく、芳香族
基又は低級脂肪族基であるが、その少なくとも一方は芳
香族基である。前記芳香族基としては、フェニル、トリ
ル、キシリル等のアリール基の使用が好ましい。前記低
級脂肪族基としては、炭素数1〜6のアルキル基、好ま
しくは炭素数1〜4のアルキル基、例えば、メチル、エ
チル、プロピル、ブチル等が用いられる。
BEST MODE FOR CARRYING OUT THE INVENTION The ultraviolet laser light detecting means used in the present invention comprises a silicon-containing polymer compound containing a repeating structural unit represented by the above general formula (1) or (2) in the main chain. Things. In the general formula (1), R 1 and R 2 may be the same or different and represent hydrogen or a lower aliphatic group. In this case, the lower aliphatic group preferably has 1 to 6 carbon atoms, preferably Is an alkyl group of 1-4, for example, methyl, ethyl, propyl, butyl and the like. Preferred R 1 and R 2 are hydrogen or methyl. In the general formula (1), R 3 and R 4 may be the same or different and are an aromatic group or a lower aliphatic group, and at least one of them is an aromatic group. In the general formula (2), R 5 and R 6 may be the same or different and are an aromatic group or a lower aliphatic group, at least one of which is an aromatic group. As the aromatic group, use of an aryl group such as phenyl, tolyl, and xylyl is preferred. As the lower aliphatic group, an alkyl group having 1 to 6 carbon atoms, preferably an alkyl group having 1 to 4 carbon atoms, for example, methyl, ethyl, propyl, butyl and the like are used.

【0006】前記ケイ素含有高分子化合物を得るには、
下記一般式(3)又は(4)で表わされる含ケイ素環状
化合物を開環重合させる。 一般式(3):
In order to obtain the silicon-containing polymer compound,
Ring-opening polymerization of a silicon-containing cyclic compound represented by the following general formula (3) or (4). General formula (3):

【化3】 (式中、R1〜R4は前記と同じ意味を有し、nは2〜4
の数を示すが、反応性を考慮するとn=2が好ましい) 一般式(4):
Embedded image (Wherein, R 1 to R 4 have the same meaning as described above, and n is 2 to 4)
Where n is preferably 2 in consideration of reactivity.) General formula (4):

【化4】 (前記式中、R5、R6は前記と同じ意味を有し、nは2
〜8、好ましくは3〜4の数を示す)
Embedded image (In the above formula, R 5 and R 6 have the same meaning as described above, and n is 2
-8, preferably 3-4)

【0007】前記一般式(3)の環状化合物の重合反応
は、従来公知の方法に従って行うことができる。この場
合の重合反応において、その反応温度は100〜400
℃、好ましくは150〜300℃であり、その反応圧力
は10-4気圧〜50kg/cm2G、好ましくは10-4
気圧〜10kg/cm2Gの圧力である。また、この重
合反応系には、触媒や溶媒を存在させることができる。
触媒としては、銅触媒が用いられ、このようなものとし
ては、例えば、銅板、金属銅、銅粉、銅ワイヤー、銅フ
ィラメントなどの金属銅;青銅、真鍮、白銅に代表され
る銅合金;塩化第一銅、臭化第一銅、酸化第一銅、トリ
メチルシリルメチル銅(Me3SiCH2Cu)等の1価
の銅化合物;塩化第二銅、臭化第二銅、酸化第二銅、硝
酸銅、硫酸銅、酢酸第二銅、ナフテン酸銅、オレイン酸
銅(II)、銅(II)アセチルアセトナート、塩化ビ
スエチレンジアミン銅(II)、硫酸テトラアミン銅
(II)等の2価の銅化合物;その他の各種銅化合物を
挙げることができる。溶媒としては、ジフェニルエーテ
ル、ジフェニルスルホン等の高沸点溶媒が用いられる。
その使用量は、含ケイ素環状化合物100重量部に対
し、100〜5000重量部、好ましくは500〜10
00重量部の割合である。前記重合反応の終了後、重合
生成物を、塩化エチレン等の塩素化炭化水素や、トルエ
ン等の芳香族炭化水素で洗浄し、未反応の含ケイ素環状
化合物を除去する。なお、前記一般式(3)で表わされ
る環状化合物の重合反応については、(N.S.Nametkin,
V.M.Vdovin,V.Zavyalov,Akad.Nauk SSSR.,162,824(196
5); V.A.Poletaev, V.M.Vdovin,N.S.Nametkin,Akad,Nau
k SSSR.,208,1112(1973); 村上正志産業科学技術研究開
発第2回ケイ素系高分子材料シンポジウム、予稿集 p-9
9(1994))に詳述されている。
The polymerization reaction of the cyclic compound of the general formula (3) can be carried out according to a conventionally known method. In the polymerization reaction in this case, the reaction temperature is 100 to 400.
C., preferably 150 to 300 ° C., and the reaction pressure is 10 −4 atm to 50 kg / cm 2 G, preferably 10 −4.
Atmospheric pressure is a pressure of 10 kg / cm 2 G. Further, a catalyst or a solvent can be present in the polymerization reaction system.
As the catalyst, a copper catalyst is used. Examples of such a catalyst include copper copper, metallic copper, copper powder, copper wire, copper filament, and other metallic copper; copper alloys represented by bronze, brass, and white copper; chlorides Monovalent copper compounds such as cuprous, cuprous bromide, cuprous oxide, and trimethylsilylmethyl copper (Me 3 SiCH 2 Cu); cupric chloride, cupric bromide, cupric oxide, nitric acid Divalent copper compounds such as copper, copper sulfate, cupric acetate, copper naphthenate, copper (II) oleate, copper (II) acetylacetonate, bisethylenediamine copper (II) chloride, and tetraamine copper (II) sulfate And other various copper compounds. As the solvent, a high boiling point solvent such as diphenyl ether and diphenyl sulfone is used.
The amount used is 100 to 5000 parts by weight, preferably 500 to 10 parts by weight, per 100 parts by weight of the silicon-containing cyclic compound.
The ratio is 00 parts by weight. After the completion of the polymerization reaction, the polymerization product is washed with a chlorinated hydrocarbon such as ethylene chloride or an aromatic hydrocarbon such as toluene to remove unreacted silicon-containing cyclic compounds. The polymerization reaction of the cyclic compound represented by the general formula (3) is described in (NSNametkin,
VMVdovin, V.Zavyalov, Akad.Nauk SSSR., 162,824 (196
5); VAPoletaev, VMVdovin, NSNametkin, Akad, Nau
k SSSR., 208,1112 (1973); Masashi Murakami 2nd Symposium on Polymer Science and Technology for Industrial Science and Technology, Proceedings p-9
9 (1994)).

【0008】一方、前記一般式(4)の環状化合物の重
合反応も、従来公知の方法に従って行うことができる。
この場合の重合反応において、その反応温度は100〜
300℃、好ましくは150〜250℃であり、その反
応圧力は常圧〜50kg/cm2G、好ましくは常圧〜
10kg/cm2Gの圧力である。また、この重合反応
系には、触媒や溶媒を存在させることができる。触媒と
しては、アルカリ金属又はアルカリ土類金属を含む化合
物が用いられ、このようなものとしては、例えば、アル
キルリチウム、アルコキシリチウム、リチウムシラノレ
ート、水酸化リチウム、カリウムシラノレート等が挙げ
られる。溶媒としては、ジフェニルエーテル、ジフェニ
ルスルホン等の高沸点溶媒が用いられる。その使用量
は、含ケイ素環状化合物100重量部に対し、100〜
1000重量部、好ましくは200〜500重量部の割
合である。前記重合反応の終了後、重合生成物を、塩化
エチレン等の塩素化炭化水素や、トルエン等の芳香族炭
化水素で洗浄し、未反応の含ケイ素環状化合物を除去す
る。また、前記一般式(4)で表わされる環状化合物の
重合反応については、M.K.Lee,D.J.Meier, J.Polymer.3
4,4882(1993)に詳述されている。
On the other hand, the polymerization reaction of the cyclic compound of the general formula (4) can also be carried out according to a conventionally known method.
In the polymerization reaction in this case, the reaction temperature is 100 to
The reaction pressure is 300 ° C., preferably 150 to 250 ° C., and the reaction pressure is normal pressure to 50 kg / cm 2 G, preferably normal pressure to
The pressure is 10 kg / cm 2 G. Further, a catalyst or a solvent can be present in the polymerization reaction system. As the catalyst, a compound containing an alkali metal or an alkaline earth metal is used. Examples of such a catalyst include alkyl lithium, alkoxy lithium, lithium silanolate, lithium hydroxide, and potassium silanolate. As the solvent, a high boiling point solvent such as diphenyl ether and diphenyl sulfone is used. The amount used is 100 to 100 parts by weight of the silicon-containing cyclic compound.
The ratio is 1000 parts by weight, preferably 200 to 500 parts by weight. After the completion of the polymerization reaction, the polymerization product is washed with a chlorinated hydrocarbon such as ethylene chloride or an aromatic hydrocarbon such as toluene to remove unreacted silicon-containing cyclic compounds. The polymerization reaction of the cyclic compound represented by the general formula (4) is described in MKLee, DJ Meier, J. Polymer.
4,4882 (1993).

【0009】前記重合反応において用いる触媒の添加量
は、ポリマーの分子量、分子量分布を支配する要因での
1つであるから、これらの要因を考慮して適宜定める。
例えば、分子量の大きなポリマーを得ようとする場合は
添加濃度を低くし、分子量の小さなポリマーを得ようと
するときは添加量を高濃度にする。一般的には、添加触
媒量は、前記ケイ素含有環状化合物中のケイ素原子1モ
ルに対するモル比で、1/100000から1/5の間
の量の使用が可能であり、1/10000から1/50
が重合条件を考慮するとより好ましい。また、重量部換
算では、前記ケイ素含有環状化合物100部に対して添
加触媒量は1/1000部から20部の間の量の使用が
可能であり、1/100部から2部が重合条件を考慮す
るとより好ましい。
The addition amount of the catalyst used in the polymerization reaction is one of the factors controlling the molecular weight and molecular weight distribution of the polymer, and is appropriately determined in consideration of these factors.
For example, when obtaining a polymer having a high molecular weight, the addition concentration is lowered, and when obtaining a polymer having a low molecular weight, the addition amount is increased. Generally, the amount of the added catalyst can be used in a molar ratio of 1/100000 to 1/5 in terms of a molar ratio to 1 mol of silicon atoms in the silicon-containing cyclic compound, and 1/10000 to 1 / 50
Is more preferable in consideration of polymerization conditions. Further, in terms of parts by weight, the amount of the added catalyst can be used in an amount of between 1/1000 parts and 20 parts with respect to 100 parts of the silicon-containing cyclic compound, and the polymerization conditions are defined as 1/100 parts to 2 parts. It is more preferable when it is considered.

【0010】前記重合反応によって固体状のケイ素含有
高分子化合物が得られる。このものは、前記一般式
(1)又は一般式(2)に示される繰返し構造単位をそ
の高分子鎖に含有するものである。この高分子化合物の
分子量は、固体状の高分子化合物を与えるような分子量
であればよく特に制約されない。このポリマーの融点
は、通常、100℃以上、好ましくは200℃以上であ
る。また、前記一般式(1)で表わされる繰返し構造単
位を主鎖に含有するケイ素含有高分子化合物を動的粘弾
性測定装置(レオメトリックス社製、RDS−II型、
パラレルプレート使用)を用いて測定した複素粘度は、
周波数1rad/sec、温度370℃において、10
0〜100,000ポイズであり、成形性の点を考慮す
ると、100〜20,000ポイズを示す高分子化合物
の使用が好ましい。一方、前記一般式(2)で表わされ
る繰返し構造単位を主鎖に有するケイ素含有高分子化合
物の複素粘度は、周波数1rad/sec、温度270
℃において、100〜100,000ポイズであり、成
形性を考慮すると、100〜20,000ポイズを示す
高分子化合物の使用が好ましい。
[0010] By the polymerization reaction, a solid silicon-containing polymer compound is obtained. This polymer contains a repeating structural unit represented by the general formula (1) or (2) in its polymer chain. The molecular weight of the polymer compound is not particularly limited as long as it is a molecular weight that gives a solid polymer compound. The melting point of this polymer is usually 100 ° C. or higher, preferably 200 ° C. or higher. In addition, a silicon-containing polymer compound containing a repeating structural unit represented by the general formula (1) in the main chain thereof was subjected to a dynamic viscoelasticity measurement apparatus (RDS-II, manufactured by Rheometrics Co., Ltd.).
Complex viscosity measured using a parallel plate)
At a frequency of 1 rad / sec and a temperature of 370 ° C., 10
It is 0 to 100,000 poise, and in view of moldability, it is preferable to use a polymer compound having 100 to 20,000 poise. On the other hand, the complex viscosity of the silicon-containing polymer having the repeating structural unit represented by the general formula (2) in the main chain is as follows: frequency 1 rad / sec, temperature 270
At 100C, it is 100 to 100,000 poise. In consideration of moldability, it is preferable to use a polymer compound having 100 to 20,000 poise.

【0011】本発明において紫外レーザ光検出手段とし
て用いるケイ素含有高分子化合物は耐熱性にすぐれると
ともに、機械的強度及び熱成形性にすぐれたものであ
る。本発明では、このケイ素含有高分子化合物からなる
紫外レーザ光検出手段に、紫外レーザ光を照射させるこ
とにより、可視光を生じさせて検出することができる。
この場合、検出手段の形状は、固体状であればよく、特
に制約されず、粉末状、フィルム状、シート状、ブロッ
ク状等の任意の形状であることができる。また、ケイ素
含有高分子化合物は、他の高分子とブレンドして検出手
段として用いることもできる。このような検出手段にお
いては、そのケイ素含有高分子化合物の含有量は、1重
量%以上、好ましくは5重量%以上にするのがよい。
The silicon-containing polymer compound used as the ultraviolet laser beam detecting means in the present invention is excellent in heat resistance, mechanical strength and thermoformability. In the present invention, by irradiating the ultraviolet laser light detecting means comprising the silicon-containing polymer compound with ultraviolet laser light, visible light can be generated and detected.
In this case, the shape of the detecting means may be a solid, and is not particularly limited, and may be any shape such as a powder, a film, a sheet, and a block. Further, the silicon-containing polymer compound can be blended with another polymer and used as a detection means. In such a detection means, the content of the silicon-containing polymer compound is 1% by weight or more, preferably 5% by weight or more.

【0012】本発明で検出できる紫外レーザ光として
は、例えば、KrF(248nm)等からの紫外レーザ
光が挙げられる。前記紫外レーザ光を本発明による検出
手段に照射した場合、被照射部は青色の強い発光を生じ
る。そのため、視認できない波長の紫外レーザ光が容易
に認識できるようになる。さらに、この発光は4〜10
秒間程度の時間観測されるため、この発光を確認しなが
らレーザ光学系の光軸調整を始めとする光学系調整がで
きる。更に本発明の検出手段の場合、照射レーザ光の強
度に応じて発光強度が変化するため、発光強度を計測す
ることによって、レーザ光強度を定量的に計測する手段
としても機能する。また、紫外レーザ光の周囲の温度分
布、振動等環境の塩化によって光線が散乱、揺らぎ、屈
折等を起こし、その強度分布は影響を受けることはよく
知られていることであり、本発明の検出手段はこれらに
関する知見を得る手段としても用いることができる。
The ultraviolet laser light that can be detected in the present invention includes, for example, an ultraviolet laser light from KrF (248 nm) or the like. When the ultraviolet laser light is applied to the detecting means according to the present invention, the irradiated portion emits strong blue light. Therefore, an ultraviolet laser beam having a wavelength that cannot be visually recognized can be easily recognized. Furthermore, this light emission is 4-10
Since the observation is performed for about a second, the optical system adjustment including the optical axis adjustment of the laser optical system can be performed while confirming the light emission. Further, in the case of the detecting means of the present invention, since the light emission intensity changes according to the intensity of the irradiation laser light, it also functions as a means for quantitatively measuring the laser light intensity by measuring the light emission intensity. Further, it is well known that the temperature distribution around the ultraviolet laser light, the salinization of the environment such as vibration causes light rays to scatter, fluctuate, refraction, etc., and that the intensity distribution is affected. The means can also be used as a means for obtaining knowledge on these.

【0013】本発明の検出手段で検出された紫外レーザ
光は、その記録が可能である。即ち、本発明の検出手段
の被照射部は、以前に照射された光強度に応じて発光強
度が変化する。従って、本発明の検出手段の場合、紫外
レーザで情報を記録し、その記録された情報を発光とし
て読み出すことができる。ここで読出しのための参照レ
ーザ光は、記録を読み出すことが主な目的であるから、
記録に用いたレーザと同一である必要が必ずしも無い
が、検出のためのレーザ光を新たに設けることが困難な
場合は、通常の光記録、読み出しに行われているよう
に、レーザ光の出力を十分に低減させて用いることもで
きる。
The ultraviolet laser light detected by the detecting means of the present invention can be recorded. That is, the light emission intensity of the irradiated portion of the detection means of the present invention changes in accordance with the light intensity previously irradiated. Therefore, in the case of the detecting means of the present invention, information can be recorded by an ultraviolet laser, and the recorded information can be read out as light emission. Here, the reference laser beam for reading is used mainly for reading a record,
It is not always necessary to use the same laser as the laser used for recording. However, if it is difficult to newly provide a laser beam for detection, the output of the laser beam is performed as in normal optical recording and reading. Can be sufficiently reduced.

【0014】[0014]

【実施例】次に本発明を実施例によりさらに詳述する。Next, the present invention will be described in more detail by way of examples.

【0015】実施例1 1,1,3,3−テトラフェニル−1,3−ジシラシク
ロブタン(一般式(3)の化合物において、R1、R2
H、R3、R4:フェニル、n:2)を脱気した後、ガラ
スアンプル中に封じ、300℃で16時間加熱した。冷
却後、固形物を取り出して乳鉢で粉砕し、トルエン中に
分散させ1,1,3,3−テトラフェニル−1,3−ジ
シラシクロブタンをトルエンで溶解除去し、乾燥し白色
のポリジフェニルシルメチレンを得た。このものを40
0℃で50kg/cm2の圧力をかけプレス成形し、厚
さ200ミクロンのフィルムを得た。このフィルムをホ
ルダーに挿み、レーザ光路中にセットした。これに、ク
リプトンフロライドのエキシマーレーザ(波長248n
mの波長のレーザ)を用い、光源から1mの距離にポリ
シルメチレンフィルムを置き、0.11W/cm2の出
力で5Hzパルスを1秒照射した。照射中、青い発光が
観測された。レーザ出力を0.001W/cm2にした
場合、目に見える発光は観測されなかった。レーザ出力
を0.004W/cm2、0.065W/cm2、0.1
1W/cm2と変えて発光を写真に記録し発光強度を比
較した。0.004W/cm2での発光強度を基準にす
ると、0.11W/cm2での発光強度は2−3倍、
0.065W/cm2で1.5−2倍あった。次に、
0.11W/cm2の出力で5Hzのパルスを照射した
時の発光強度の時間変化を測定した。照射直後と比較す
ると2秒後には約50%に減少し、約10秒後では消失
した。
Example 1 1,1,3,3-tetraphenyl-1,3-disilacyclobutane (in the compound of the general formula (3), R 1 and R 2 are represented by the following formulas:
H, R 3 , R 4 : phenyl, n: 2) were degassed, sealed in a glass ampoule and heated at 300 ° C. for 16 hours. After cooling, the solid was taken out, pulverized in a mortar, dispersed in toluene, 1,1,3,3-tetraphenyl-1,3-disilacyclobutane was dissolved and removed in toluene, dried, and dried to give white polydiphenylsilyl. Methylene was obtained. This one is 40
Press forming was performed at 0 ° C. under a pressure of 50 kg / cm 2 to obtain a film having a thickness of 200 μm. This film was inserted into a holder and set in a laser beam path. An excimer laser of krypton fluoride (wavelength 248 n)
m), a polysilmethylene film was placed at a distance of 1 m from the light source, and a 5 Hz pulse was irradiated at an output of 0.11 W / cm 2 for 1 second. Blue light emission was observed during irradiation. When the laser output was set to 0.001 W / cm 2 , no visible light emission was observed. The laser output is set to 0.004 W / cm 2 , 0.065 W / cm 2 , 0.1
The luminescence was recorded in photographs while changing the luminescence intensity to 1 W / cm 2 and the luminescence intensity was compared. Based on the emission intensity at 0.004 W / cm 2 , the emission intensity at 0.11 W / cm 2 is 2-3 times,
It was 1.5-2 times at 0.065 W / cm 2 . next,
The time change of the light emission intensity when a pulse of 5 Hz was irradiated at an output of 0.11 W / cm 2 was measured. Compared to immediately after the irradiation, it decreased to about 50% after 2 seconds and disappeared after about 10 seconds.

【0016】実施例2 温度計、還流冷却器、撹拌器を備えたフラスコに、ヘキ
サフェニルシクロトリシロキサン(前記一般式(4)の
化合物において、R5:フェニル、R6:フェニル、n:
3)25gとジフェニルエーテル50mLをいれ、17
0℃に加熱した。この混合物にリチウムトリフェニルシ
ラノエート(0.65mol)を加え、170℃で1時
間撹拌した。室温に冷却後有機層を酢酸で中和し、析出
した生成物を濾取しトルエンで洗浄後、減圧200℃で
乾燥して白色固体のポリジフェニルシロキサン18gを
得た。これを300℃で50kg/cm2の圧力をかけ
プレス成形し、厚さ200ミクロンのフィルムを得た。
前記フィルムをホールダーにはさみ、レーザ光路中に光
源から1mの距離にセットした。これに、KrFレーザ
ー(AQX−150、MPB社(カナダ))を用い、2
48nm波長の光を、0.11W/cm2の出力で、5
Hzの周波数のパルスとして1秒間照射したところ、そ
の照射中青色い発光が観測された。次に、0.11W/
cm2の出力で、5Hzのパルスを照射した時の発光強
度の時間変化を測定した。照射直後と比較すると、0.
5秒後には約50%に減少し、約5秒後に消失した。
Example 2 A flask equipped with a thermometer, a reflux condenser and a stirrer was charged with hexaphenylcyclotrisiloxane (in the compound of the formula (4), R 5 : phenyl, R 6 : phenyl, n:
3) Add 25 g and 50 mL of diphenyl ether, and add
Heated to 0 ° C. To this mixture, lithium triphenylsilanoate (0.65 mol) was added, and the mixture was stirred at 170 ° C. for 1 hour. After cooling to room temperature, the organic layer was neutralized with acetic acid, and the precipitated product was collected by filtration, washed with toluene, and dried at 200 ° C. under reduced pressure to obtain 18 g of a white solid polydiphenylsiloxane. This was pressed at 300 ° C. under a pressure of 50 kg / cm 2 to obtain a film having a thickness of 200 μm.
The film was sandwiched between holders and set at a distance of 1 m from the light source in the laser beam path. A KrF laser (AQX-150, MPB (Canada)) was used for this.
48 nm wavelength light with an output of 0.11 W / cm 2
When irradiation was performed for 1 second as a pulse having a frequency of Hz, blue light emission was observed during the irradiation. Next, 0.11W /
The time change of the light emission intensity when a pulse of 5 Hz was irradiated with an output of cm 2 was measured. Compared to the time immediately after the irradiation, 0.
It decreased to about 50% after 5 seconds and disappeared after about 5 seconds.

【0017】[0017]

【発明の効果】本発明の紫外光検出方法によれば、目に
見えない紫外レーザ光を可視化させ、可視光として検出
することができる。また、本発明においては、検出した
紫外レーザ光は、その検出手段に光の強弱として又はパ
ターンとして記録することができる。しかも、その記録
は必要に応じ、容易に読取ることができる。
According to the ultraviolet light detecting method of the present invention, invisible ultraviolet laser light can be visualized and detected as visible light. Further, in the present invention, the detected ultraviolet laser light can be recorded on the detecting means as light intensity or as a pattern. Moreover, the record can be easily read as needed.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 永井 秀明 北海道札幌市豊平区月寒東2条17丁目2 番1号 工業技術院北海道工業技術研究 所内 (72)発明者 奥谷 猛 北海道札幌市豊平区月寒東2条17丁目2 番1号 工業技術院北海道工業技術研究 所内 (72)発明者 村上 正志 神奈川県足柄上郡山北町岸603番地 ダ ウコーニングアジア株式会社 研究・情 報センター内 (72)発明者 櫛引 信男 神奈川県足柄上郡山北町岸603番地 ダ ウコーニングアジア株式会社 研究・情 報センター内 審査官 村田 尚英 (58)調査した分野(Int.Cl.6,DB名) G01J 1/02 G01J 1/58──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hideaki Nagai 2-1-1, Tsukikan East, Toyohira-ku, Sapporo-city, Hokkaido In-house Hokkaido Institute of Industrial Technology (72) Inventor Takeshi Okutani Tsukikan, Toyohira-ku, Sapporo, Hokkaido Higashi 2-jo 17-2-1, Hokkaido Institute of Industrial Technology Hokkaido Institute of Technology (72) Inventor Masashi Murakami 603, Yamakita-machi, Ashigagami-gun, Kanagawa Prefecture Dow Corning Asia Co., Ltd. Research and Information Center (72) Inventor Kushibiki Nobuo 603, Kishi, Yamakita-machi, Ashigara-kami-gun, Kanagawa Pref. Dow Corning Asia Co., Ltd. Research and Information Center Examiner Naohide Murata (58) Field surveyed (Int. Cl. 6 , DB name) G01J 1/02 G01J 1/58

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 下記一般式(1)又は一般式(2)で表
わされる繰返し構造単位を主鎖中に含有するケイ素含有
高分子化合物を検出手段として用いることを特徴とする
紫外線レーザ光の検出方法。 一般式(1): 【化1】 (式中、R1及びR2は同一又は異なっていてもよく、水
素又は低級脂肪族基を表わし、R3及びR4は同一又は異
なっていてもよく、芳香族基又は低級脂肪族基を表わす
が、R3及びR4の少なくとも一方は芳香族基を表わすも
のとする) 一般式(2): 【化2】 (式中、R5及びR6は同一又は異ってもよく、芳香族基
又は低級脂肪族基を表わすが、R5及びR6の少なくとも
一方は芳香族基を表わすものとする)
1. Detection of ultraviolet laser light, wherein a silicon-containing polymer compound containing a repeating structural unit represented by the following general formula (1) or (2) in its main chain is used as a detection means. Method. General formula (1): (Wherein R 1 and R 2 may be the same or different and represent hydrogen or a lower aliphatic group, and R 3 and R 4 may be the same or different and represent an aromatic group or a lower aliphatic group. Wherein at least one of R 3 and R 4 represents an aromatic group.) General formula (2): (Wherein, R 5 and R 6 may be the same or different and represent an aromatic group or a lower aliphatic group, but at least one of R 5 and R 6 represents an aromatic group)
JP4538196A 1996-02-07 1996-02-07 Ultraviolet laser light detection method Expired - Lifetime JP2787072B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4538196A JP2787072B2 (en) 1996-02-07 1996-02-07 Ultraviolet laser light detection method
US08/795,205 US5808307A (en) 1996-02-07 1997-02-05 Method of detecting ultraviolet laser beam and method of recording information

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4538196A JP2787072B2 (en) 1996-02-07 1996-02-07 Ultraviolet laser light detection method

Publications (2)

Publication Number Publication Date
JPH09210779A JPH09210779A (en) 1997-08-15
JP2787072B2 true JP2787072B2 (en) 1998-08-13

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ID=12717700

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Country Link
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