JP2778092B2 - Sol-gel film forming liquid and film forming method - Google Patents

Sol-gel film forming liquid and film forming method

Info

Publication number
JP2778092B2
JP2778092B2 JP7754189A JP7754189A JP2778092B2 JP 2778092 B2 JP2778092 B2 JP 2778092B2 JP 7754189 A JP7754189 A JP 7754189A JP 7754189 A JP7754189 A JP 7754189A JP 2778092 B2 JP2778092 B2 JP 2778092B2
Authority
JP
Japan
Prior art keywords
sol
film forming
forming
gel film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP7754189A
Other languages
Japanese (ja)
Other versions
JPH02255530A (en
Inventor
精二 高尾
利行 小橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON EKUSURAN KOGYO KK
Original Assignee
NIPPON EKUSURAN KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON EKUSURAN KOGYO KK filed Critical NIPPON EKUSURAN KOGYO KK
Priority to JP7754189A priority Critical patent/JP2778092B2/en
Publication of JPH02255530A publication Critical patent/JPH02255530A/en
Application granted granted Critical
Publication of JP2778092B2 publication Critical patent/JP2778092B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、透明導電性酸化錫形成用として好適なゾル
・ゲル成膜溶液及び透明導電性酸化錫ゾル・ゲル成膜方
法に関する。
Description: TECHNICAL FIELD The present invention relates to a sol-gel film forming solution suitable for forming transparent conductive tin oxide and a method for forming a transparent conductive tin oxide sol-gel film.

(従来の技術と問題点) 近年、電気光学素子分野のめざましい発展に伴ない、
電場発光、液晶、画像蓄積など各種のオプティカルデバ
イスの透明電極、発熱体や抵抗体、太陽電池、太陽熱発
電用の選択透過膜等の開発が活発になされており、Sn
O2、In2O3系等の透明導電性膜が注目されている。
(Conventional technologies and problems) In recent years, with the remarkable development of the electro-optical element field,
The development of transparent electrodes for various optical devices such as electroluminescence, liquid crystal, and image storage, heating elements and resistors, solar cells, and permselective membranes for solar thermal power generation has been active.
Attention has been focused on transparent conductive films such as O 2 and In 2 O 3 .

これらの透明導電性膜の形成方法としては、スプレー
法、蒸着法、CVD法、スパッタリング法、さらに酸化物
前駆体分子を含む(ゾル)で基板を被覆しその後ゲル化
焼成する所謂ゾル・ゲル法と称される方法等が知られて
いる。
As a method for forming these transparent conductive films, a so-called sol-gel method in which a substrate is coated with a (sol) containing oxide precursor molecules and then gelled and fired, which is a spray method, a vapor deposition method, a CVD method, a sputtering method, or the like. Is known.

上述のスプレー法、蒸着法、CVD法、スパッタリング
法は、いずれも装置が複雑で生産性に劣る、通常パター
ンを形成するためにエッチング工程を要する、大面積・
均一緻密な膜形成が困難である等の欠点がある。
The above-mentioned spray method, vapor deposition method, CVD method, and sputtering method are all complicated equipments and inferior in productivity, usually require an etching step to form a pattern, a large area.
There are drawbacks such as difficulty in forming a uniform and dense film.

また、ゾル・ゲル法は基板を被覆するのに、ゾルをス
プレーする方法、回転する基板上に滴下するスピナー
法、基板をゾルに浸漬する方法等があり、装置が安価で
ある、種々の基板形状に被覆できる等の長所を有する
が、被覆表面の物理的汚れ、化学的に官能基の影響を受
け易い、ゾル膜から硬化酸化物膜に至るまで時間を要す
る、膜の厚さが不均一になり易い、ピンホール様のムラ
が生ずる等の欠点が生じ、これらの欠点は、透明導電性
膜の可視光透過率の低下及び電気抵抗の増大をもたらし
ていた。
The sol-gel method includes a method of spraying a sol to coat a substrate, a spinner method of dropping on a rotating substrate, and a method of dipping the substrate in the sol. It has the advantage that it can be coated in a shape, but it is easily affected by physical stains on the coating surface, chemically functional groups, it takes time from the sol film to the cured oxide film, the film thickness is uneven However, such drawbacks as pinhole-like unevenness tend to occur, and these drawbacks have resulted in a decrease in visible light transmittance and an increase in electric resistance of the transparent conductive film.

(発明が解決しようとする課題) 本発明の目的は、最終的に得られる被覆成膜の透明
性、均質性、緻密性、導電性等に優れた性能を工業的有
利に付与することのできるゾル・ゲル成膜用液及びゾル
・ゲル成膜方法を提供することにある。
(Problem to be Solved by the Invention) An object of the present invention is to provide industrially advantageous properties such as transparency, uniformity, denseness, and conductivity of a finally formed coating film. An object of the present invention is to provide a sol-gel film forming liquid and a sol-gel film forming method.

(課題を解決するための手段) 上述した本発明の目的を達成し得るゾル・ゲル成膜用
液は、カルボン酸錫塩及び過酸化水素を水性媒体中で反
応させて得られる透明導電性酸化錫形成用透明水性溶液
に、界面活性剤として弗素化アルキルオキシベンゼンス
ルホン酸塩を添加するものであり、またゾル・ゲル成膜
方法は、基板に超音波振動を与えて、該基板にカルボン
酸錫塩及び過酸化水素を水性媒体中で反応させて得られ
る透明導電性酸化錫形成用透明水性溶液又は上述したゾ
ル・ゲル成膜用液で被覆することにより行なうことがで
きる。
(Means for Solving the Problems) A sol-gel film-forming liquid that can achieve the above-mentioned object of the present invention is a transparent conductive oxide obtained by reacting a tin carboxylate and hydrogen peroxide in an aqueous medium. A fluorinated alkyloxybenzenesulfonate is added as a surfactant to a transparent aqueous solution for forming tin, and a sol-gel film forming method is to apply ultrasonic vibration to a substrate to give a carboxylic acid to the substrate. The reaction can be performed by coating with a transparent aqueous solution for forming a transparent conductive tin oxide obtained by reacting a tin salt and hydrogen peroxide in an aqueous medium or the above-mentioned solution for forming a sol-gel film.

以下、本発明を詳述する。 Hereinafter, the present invention will be described in detail.

本発明で用いるカルボン酸錫塩としては、例えば蟻酸
第1錫、酢酸第1錫、シュウ酸第1錫、酒石酸第1錫な
どが挙げられるが、本発明の目的達成上シュウ酸第1錫
が好ましい。
Examples of the tin carboxylate used in the present invention include, for example, stannous formate, stannous acetate, stannous oxalate, stannous tartrate, and the like. preferable.

過酸化水素の量としては該錫塩1モルに対して1.5モ
ル以上、好ましくは1.6〜2.2モルの範囲内に設定するこ
とが望ましく、かかる範囲の下限を外れる場合には最終
的に得られる酸化錫の緻密性や導電性が低下し、また必
要以上に用いても性能向上効果が認められなくなる。
The amount of hydrogen peroxide is desirably set to 1.5 moles or more, preferably 1.6 to 2.2 moles, per mole of the tin salt. Tin density and conductivity are reduced, and the effect of improving performance is not recognized when used more than necessary.

また均一な反応生成透明水性溶液を形成せしめ、最終
的に優れた導電性を有する酸化錫を提供するために、反
応系にドーパントを共存させることが望ましく、かかる
ドーパントとしては、例えばCu、Ag、Au等のI b族、Cd
族のII b族、Ce、Eu等のIII a族、V、Nb、Ta、等のV a
族、As、Sb、Bi等のV b族、Cr、Mo、W等のVI a族、Re
等のVII a族、Ru、Rh、Pd、Os、Ir、Pt等のVIII族の各
元素及びフッ素を含有する化合物が挙げられ、中でもI
b、V a、V b、VI a、VIII族及びフッ素から選ばれる元
素を含有する化合物が好ましく、特にSb2O3、Sb2O4、Sb
6O13等の酸化アンチモンが、好適に用いられ、使用量と
してはカルボン酸錫塩1モルに対して0.01〜0.35モル、
好ましくは0.03〜0.25モルの範囲内に設定することが望
ましい。
Also, to form a uniform reaction product transparent aqueous solution, it is desirable to coexist a dopant in the reaction system, in order to finally provide tin oxide having excellent conductivity, as such a dopant, for example, Cu, Ag, Ib group such as Au, Cd
Group IIb group, IIIa group such as Ce, Eu, etc., Va such as V, Nb, Ta, etc.
Group, Vb group such as As, Sb, Bi, VIa group such as Cr, Mo, W, Re
Group VIIa, such as Ru, Rh, Pd, Os, Ir, Pt and other elements of Group VIII and fluorine-containing compounds, among which I
b, Va, Vb, VIa, a compound containing an element selected from the group VIII and fluorine, particularly Sb 2 O 3 , Sb 2 O 4 , Sb
Antimony oxide such as 6 O 13 is preferably used, and the used amount is 0.01 to 0.35 mol per mol of tin carboxylate,
It is desirable to set it within the range of preferably 0.03 to 0.25 mol.

ここで、上述したドーパントをカルボン酸錫塩と共存
させる場合には、過酸化水素の量としては、該錫塩及び
ドーパントの総モル数1モルに対して1.5モル以上、好
ましくは1.6〜2.2モルの範囲内に設定することが望まし
い。
Here, when the above-mentioned dopant coexists with the tin carboxylate, the amount of hydrogen peroxide is 1.5 mol or more, preferably 1.6 to 2.2 mol, per mol of the total mol of the tin salt and the dopant. It is desirable to set within the range.

また、水性媒体としては通常水を用いるが、反応生成
溶液の粘度上昇やゲル化を来たさない範囲でアルコー
ル、アセトン等の水混和性有機溶剤を併用しても構わな
い。
Water is usually used as the aqueous medium, but a water-miscible organic solvent such as alcohol or acetone may be used in combination as long as the viscosity of the reaction product solution does not increase and gelation does not occur.

透明導電性酸化錫形成用透明水性溶液の製造手段とし
ては、水性媒体中にカルボン酸錫塩及び所望によりドー
パントを添加、撹拌し、所望量の過酸化水素を添加す
る。
As a means for producing a transparent aqueous solution for forming a transparent conductive tin oxide, a tin carboxylate and a dopant as needed are added to an aqueous medium, stirred, and a desired amount of hydrogen peroxide is added.

かかる水性溶液の製造手段は、例えば特開昭62−1871
13号公報に記載されている。
Means for producing such an aqueous solution is described in, for example, JP-A-62-1871.
No. 13 is described.

次に、本発明のゾル・ゲル成膜用液として、弗素化ア
ルキルオキシベンゼンスルホン酸塩を上述した該水性溶
液に界面活性剤として用いることが必要であり、かかる
弗素化アルキルオキシベンゼンスルホン酸塩として、ア
ルキル鎖は直鎖状又は分枝状のもので、弗素化は部分弗
素化又は全弗素化されたものが挙げられ、スルホン酸塩
としてはスルホン酸のソーダ塩、カリウム塩、アンモニ
ウム塩等のものであれは採用され、例えば部分弗素化ヘ
プチルオキシベンゼンスルホン酸カリウム、全弗素化ノ
ネニルオキシベンゼンスルホン酸ソーダ等を挙げること
ができる。
Next, as the sol-gel film-forming solution of the present invention, it is necessary to use a fluorinated alkyloxybenzene sulfonate as a surfactant in the aqueous solution described above. The alkyl chain is linear or branched, and the fluorination includes partially fluorinated or fully fluorinated ones. Examples of the sulfonic acid salt include a sodium salt, a potassium salt, and an ammonium salt of sulfonic acid. Any of these can be used, and examples thereof include partially fluorinated potassium heptyloxybenzenesulfonate and fully fluorinated sodium nonenyloxybenzenesulfonate.

弗素化アルキルオキシベンゼンスルホン酸塩の添加量
としては、水性媒体の種類によって異なるが、水性溶液
に対して10ppm以上用いることが好ましく、添加、溶解
手段としては、所望量を添加し、撹拌混合することによ
り行なわれ、必要に応じて加温してもよい。
The amount of the fluorinated alkyloxybenzene sulfonate added depends on the type of the aqueous medium, but it is preferably used in an amount of 10 ppm or more based on the aqueous solution. The heating may be performed if necessary.

上述した水性溶液又は本発明にかかるゾル・ゲル成膜
用液を用いて成膜する手段としては、被覆する基板に超
音波振動を与えることが必要であり、かかる手段により
成膜に均質性且つ緻密性が付与されるものである。
Means for forming a film using the above-described aqueous solution or the sol-gel film-forming solution according to the present invention requires applying ultrasonic vibration to the substrate to be coated, and the uniformity and uniformity of film formation can be achieved by such a means. Denseness is imparted.

基板に超音波振動が与えられている以上、成膜方法と
してスプレー法、スピナー法、浸漬法等如何なる方法を
採用してもよい。
As long as ultrasonic vibration is applied to the substrate, any method such as a spray method, a spinner method, and an immersion method may be adopted as a film forming method.

ここで超音波振動は、市販の集中型、面発振型超音波
発振機等適宜用いることができ、基板に直接接触させる
又は媒体を通して振動させることができる。
Here, as the ultrasonic vibration, a commercially available centralized type, surface oscillation type ultrasonic oscillator, or the like can be used as appropriate, and can be brought into direct contact with the substrate or vibrated through a medium.

超音波発振機の振動数及び発振出力は、成膜方法、基
板の大きさ等により適宜設定することができる。
The frequency and oscillation output of the ultrasonic oscillator can be appropriately set according to the film formation method, the size of the substrate, and the like.

(効 果) 本発明ゾル・ゲル成膜用液は、均質な膜形成に大きな
効果を示し、さらに透明性、緻密性、導電性に優れた効
果を示すことができ、また、本発明にかかるゾル・ゲル
成膜方法は、超音波振動を与えることにより、基板と成
膜用液との密着を促進すると同時に、基板及び成膜用液
中の塵埃を脱離させ、さらに成膜用液中の溶存ガスの脱
離効果が相俟って均質且つ高物性の成膜を与えることが
できる。
(Effect) The sol-gel film-forming liquid of the present invention has a great effect on forming a uniform film, and can show excellent effects on transparency, denseness, and conductivity. The sol-gel film forming method promotes close contact between the substrate and the film forming liquid by applying ultrasonic vibration, and at the same time, removes dust in the substrate and the film forming liquid, In addition, the effect of desorbing dissolved gas can be combined to form a uniform and highly physical film.

本発明のゾル・ゲル成膜方法は、本発明のゾル・ゲル
成膜用液を用いると効果が一層顕著である。
The effect of the sol-gel film forming method of the present invention is more remarkable when the sol-gel film forming liquid of the present invention is used.

上述したゾル・ゲル成膜用液及び成膜方法により均質
性、緻密性、透明性、導電性に優れ、且つ高物性の成膜
が得られ、透明電極、帯電防止膜、静電防止、通電性を
要する分野に広範に用いることができる。
The above-mentioned sol-gel film forming solution and film forming method provide a film having excellent uniformity, denseness, transparency, conductivity, and high physical properties, and have a transparent electrode, an antistatic film, an antistatic film, and an electric current. It can be used widely in fields that require performance.

実施例 以下に実施例を示し本発明を更に具体的に説明する
が、本発明はこれらの実施例の記載によって、その範囲
を限定されるものではない。実施例中に示される部及び
百分率は、特に断らない限り重量基準である。
Examples Hereinafter, the present invention will be described in more detail with reference to Examples, but the scope of the present invention is not limited by the descriptions of these Examples. Parts and percentages shown in the examples are on a weight basis unless otherwise specified.

なお、可視光透過率及び表面抵抗率は、下記のように
して測定した。
In addition, the visible light transmittance and the surface resistivity were measured as follows.

1. 可視光透過率 (株)日立製作所、分光光度計U−3400型を使用し、
reference側は空気とし、Sample側は両面に供試試料を
被覆した石英ガラス製基板(13mm×60mm、厚み1mm)を
用いて測定を行ない、膜厚による干渉波形の影響を避け
るために可視光域350〜700nmの積分平均透過率を求め
て、可視光透過率(T%)とした。
1. Visible light transmittance Hitachi, Ltd., using a spectrophotometer U-3400 type,
The reference side is air, and the sample side is measured using a quartz glass substrate (13 mm x 60 mm, 1 mm thick) coated on both sides with the test sample, and the visible light range is used to avoid the influence of the interference waveform due to the film thickness. The integrated average transmittance from 350 to 700 nm was determined and defined as visible light transmittance (T%).

2. 電気伝導度 成膜に巾10.0mm、間隔10.0mmのアルミニウム電極を蒸
着し、直流四端子法で表面抵抗率ρ(Ω/□)を求め
た。
2. Electric conductivity An aluminum electrode having a width of 10.0 mm and an interval of 10.0 mm was deposited on the film, and the surface resistivity ρ s (Ω / □) was obtained by a DC four-terminal method.

実施例1 常温の水2006gにシュウ酸第1錫(SnC2O4)467.4g及
び三酸化ニアンチモン17.35gを添加し、撹拌下に31%の
H2O2水509.2g添加して50分間反応させて、透明水性溶液
を得た。
Example 1 467.4 g of stannous oxalate (SnC 2 O 4 ) and 17.35 g of diantimony trioxide were added to 2006 g of water at room temperature, and 31% of the mixture was stirred.
509.2 g of H 2 O 2 water was added and reacted for 50 minutes to obtain a clear aqueous solution.

該溶液のSn/Sb(原子モル比)=95/5であり、H2O
2は、シュウ酸第1錫及び三酸化ニアンチモンの総モル
数に対して2倍モルである。
Sn / Sb (atomic molar ratio) of the solution is 95/5, and H 2 O
2 is twice as much as the total number of moles of stannous oxalate and diantimony trioxide.

該溶液に、フタージエント100((株)ネオス製(ペ
ルフルオロノネニルオキシベンゼンスルホン酸ソーダ)
を該溶液に0.6g(0.02%)添加し、撹拌溶解してゾル・
ゲル成膜用液を得た。
To this solution was added FUTAJIENT 100 (manufactured by Neos Co., Ltd. (sodium perfluorononenyloxybenzenesulfonate)).
Was added to the solution and stirred and dissolved.
A liquid for gel film formation was obtained.

ゾル・ゲル成膜用液40部を水60部で希釈して成膜原液
(A)を作製し、該原液に石英ガラス板を1分間浸漬
(降下速度13.2cm/min.、上昇速度58cm/min.)した後1
時間室温で風乾し、電気炉((株)デンケン製)で800
℃×2時間の焼成を行なった。
Dilute 40 parts of the sol-gel film forming solution with 60 parts of water to prepare a film forming stock solution (A), and immerse a quartz glass plate in the stock solution for 1 minute (a descent speed of 13.2 cm / min., A rising speed of 58 cm / min.) and then 1
Air-dried at room temperature for an hour, and 800 in an electric furnace (Denken Co., Ltd.)
The firing was performed at a temperature of 2 ° C. × 2 hours.

かかる浸漬−焼成を4サイクル行ない、成膜(1)を
得た。
This immersion-firing was performed for 4 cycles to obtain a film (1).

比較例1 実施例1の成膜原液(A)を用いるかわりに実施例1
の透明水性用液40部を水60部で希釈して成膜原液(B)
とする以外は実施例1と同様にして成膜(2)を得た。
Comparative Example 1 Instead of using the stock solution (A) of Example 1, Example 1 was used.
Diluent (B) of 40 parts of the transparent aqueous solution diluted with 60 parts of water
A film (2) was obtained in the same manner as in Example 1 except for the above.

実施例2、3 成膜原液(A)、(B)を用いて浸漬時に超音波振動
を与える(ブランソニック(株)製 B−220を使用)
以外は実施例1と同様にして成膜(3)及び(4)を得
た。
Examples 2 and 3 Ultrasonic vibration is applied at the time of immersion using the stock solutions (A) and (B) (using B-220 manufactured by Bransonic Corporation).
Except for the above, films (3) and (4) were obtained in the same manner as in Example 1.

以上、実施例1、2及び3並びに比較例1の成膜特性
の結果を第1表に示す。
Table 1 shows the results of the film forming characteristics of Examples 1, 2 and 3 and Comparative Example 1.

第1表から明らかなように、本発明ゾル・ゲル成膜用
液を用いた1は2に比べて透過率、表面抵抗率ともに優
れており、また、超音波振動を与えることにより、透過
率、表面抵抗率ともに優れた値を示し、特に本発明ゾル
・ゲル成膜用液と成膜方法を併用した3は効果が顕著で
あることが理解される。
As is clear from Table 1, 1 using the sol-gel film-forming liquid of the present invention is superior in both transmittance and surface resistivity as compared with 2, and the transmittance is increased by applying ultrasonic vibration. In addition, it is understood that both the surface resistivity and the surface resistivity show excellent values, and the effect 3 is particularly remarkable when the sol-gel film forming solution of the present invention and the film forming method are used in combination.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】カルボン酸錫塩及び過酸化水素を水性媒体
中で反応させて得られる透明導電性酸化錫形成用透明水
性溶液に、界面活性剤として弗素化アルキルオキシベン
ゼンスルホン酸塩を添加してなるゾル・ゲル成膜用液。
1. A fluorinated alkyloxybenzenesulfonate as a surfactant is added to a transparent aqueous solution for forming a transparent conductive tin oxide obtained by reacting a tin carboxylate and hydrogen peroxide in an aqueous medium. A sol-gel film forming liquid.
【請求項2】基板に超音波振動を与えて、該基板にカル
ボン酸錫塩及び過酸化水素を水性媒体中で反応させて得
られる透明導電性酸化錫形成用透明水性溶液又は請求項
1記載のゾル・ゲル成膜用液で被覆することを特徴とす
るゾル・ゲル成膜方法。
2. A transparent aqueous solution for forming a transparent conductive tin oxide obtained by applying ultrasonic vibration to a substrate and reacting the substrate with a tin carboxylate and hydrogen peroxide in an aqueous medium. A method for forming a sol-gel film, characterized by coating with a sol-gel film-forming liquid.
JP7754189A 1989-03-28 1989-03-28 Sol-gel film forming liquid and film forming method Expired - Fee Related JP2778092B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7754189A JP2778092B2 (en) 1989-03-28 1989-03-28 Sol-gel film forming liquid and film forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7754189A JP2778092B2 (en) 1989-03-28 1989-03-28 Sol-gel film forming liquid and film forming method

Publications (2)

Publication Number Publication Date
JPH02255530A JPH02255530A (en) 1990-10-16
JP2778092B2 true JP2778092B2 (en) 1998-07-23

Family

ID=13636862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7754189A Expired - Fee Related JP2778092B2 (en) 1989-03-28 1989-03-28 Sol-gel film forming liquid and film forming method

Country Status (1)

Country Link
JP (1) JP2778092B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778525A (en) * 1993-09-07 1995-03-20 Hitachi Ltd Material for transparent conductive film and formation of transparent conductive film using material thereof
TW505685B (en) 1997-09-05 2002-10-11 Mitsubishi Materials Corp Transparent conductive film and composition for forming same

Also Published As

Publication number Publication date
JPH02255530A (en) 1990-10-16

Similar Documents

Publication Publication Date Title
US4908065A (en) Coating solution for use in the formation of metal oxide film
KR100607595B1 (en) Process for depositing layers based on metal oxides, substrate provided with a etched layer obtained from said process and methods of manufacturing layers using said deposition process in the deposition of a layer and in the industry
JPS63303076A (en) Precipitation of electrolytic chromium layer
US4960618A (en) Process for formation of metal oxide film
US4201453A (en) Liquid crystal cell having an insulating layer of a silicon oxide base
JPH056289B2 (en)
JPS60236404A (en) Method of producing thin film ferrodielectric material
US4873352A (en) Transparent aqueous tin compound solution
JPH07104442B2 (en) Method for producing magnesium fluoride film and low reflection film
JP2778092B2 (en) Sol-gel film forming liquid and film forming method
WO1990010243A1 (en) Formation of thin magnesium fluoride film and low-reflection film
JP3834339B2 (en) Transparent conductive film and method for producing the same
JP3889221B2 (en) Coating liquid for forming ITO transparent conductive film and method for forming transparent conductive film
JPH0367978B2 (en)
JP2759470B2 (en) Stannate sol and method for producing the same
JPH08253318A (en) Formation of transparent electroconductive material
JP3004679B2 (en) Method of forming transparent conductive film
JPH02278201A (en) Production of mgf2 film and production of low reflection film
JPH0233075B2 (en)
JPH08183605A (en) Production of metal oxide film by coating
JPH0528450B2 (en)
JPS59198606A (en) Composition for forming transparent conductive film
JPH0826823A (en) Production of transparent and electrically conductive ceramics
JPS60200403A (en) Thin film dielectric unit and method of producing same
JPH0798911B2 (en) Coating liquid for conductive film formation

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees