JP2770813B2 - Liquid crystal display - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] BACKGROUND OF THE INVENTIONAs an image display device
UsedThin film transistor for applying voltage to display pixel electrodes
Liquid crystal display device with starIn placeRelated. [0002] 2. Description of the Related Art Recently, thin terminals such as OA equipment terminals and flat-screen televisions have been developed.
The demand for display development is increasing, one of them
In a liquid crystal display device where electrodes are arranged in a matrix,
The active element at the intersection of the electrodes to drive the liquid crystal.
Active matrix method is actively researched
ing. FIG. 16 shows an active matrix type liquid crystal.
It is a typical equivalent circuit diagram of a display device. (28) is the liquid crystal layer
Yes, (29) is for holding the voltage applied to the liquid crystal layer.
It is a capacitor. However, the capacitor (29) is omitted.
Sometimes. (30) controls the voltage for driving the liquid crystal layer
Switching transistor. X₁ , X_Two,
X_Three ... are the gates of the switching transistor (30)
Signal line for controlling the₁ , Y_Two , Y_Three ... is liquid
Data line for applying the voltage required to drive the crystal
, And are driven line-sequentially. On the other hand, for use as a switching transistor
The structure of the thin film transistor that is used
According to the positional relationship between the pole, source electrode, and drain electrode,
It is classified into a planar type structure, a stagger type structure, and the like. Figure
17 is a coplanar type and FIG. 18 is a stagger type thin film transformer.
FIG. 19 is a plan view of the cross section of the resistor.
I have. Portions indicated by the same numbers in the drawings are the same thin film transistors.
Figure 3 shows a transistor component. [0005] (1) is an insulating substrate such as quartz or glass.
Then, a thin film transistor is formed thereon. (2) is half
Conductive layer, polysilicon, amorphous silicon,
CdSe or the like is used. (6) and (10) are sources
These are electrodes and drain electrodes, and are usually wired with Al or the like.
(11) is a gate insulating film,_Two , Si_Three N_Four Etc.
It is formed. (12) is a gate electrode made of Al, Cr, etc.
Wired. (31) is a protective film and (14) is a contact hole.
It is. (15) is a display pixel electrode made of a transparent conductive film.
You. [0006] FIG. 20 is a plan view thereof.
Thin-film transistors with simplified pattern structures are also known
I have. As shown in the figure, this thin film transistor
Subthus line (4), (5), drain electrode (10), display pixel
After forming the electrode (15) with a transparent conductive film, a semiconductor, an insulating film,
It is also a gate bus lineGate electrode (12) is continuously manufactured.
After the film is formed by etching with the pattern of the gate electrode (12)
I do. A thin film transistor having the above structure
By arranging the data for each pixel,
Better than panels using a
High-density display with excellent image quality can be obtained. [0008] As described above, the thin film transistor
High density liquid crystal with good visibility by using transistor
Display is possible, but one thin film transistor per pixel
Display, for example, 600 rows x 200 columns
To make 120,000 thin film transistors on one substrate
Need to be built in, many transistors are indispensable
It is very difficult to make a fall. The types of defects of transistor failure include:
Gate and source disconnection, gate-source short circuit, gate
Short circuit between drain, short circuit between source and drain, transistor
Data characteristic failure. The disconnection of the gate and the source is caused by
Damage and poor step coverage at the crossover
Non-lit line missing when using a liquid crystal cell
However, the lead extraction electrodes at both ends of the disconnection line
Make sure there are no defects on the display
Is possible. On the other hand, a gate-source short circuit is caused by dust in the insulating film.
May occur due to other reasons, such as
Signal constantly escapes to the source line through the short-circuit point.
Therefore, the voltage is always applied to the source and the lighting line
It becomes a defect. The same cause is caused by a short circuit between the gate and drain.
The gate voltage is generated at the source signal through the short-circuit point.
Is always applied because it is applied to the drain regardless of
It becomes a point defect. Also, if the transistor characteristics are poor and the gate
If sufficient current does not flow when pressure is applied,
When no signal voltage is applied, a non-lighting defect occurs when selected. A short circuit between the source and the drain
This is caused by residual etching of the rain electrode, etc.
Source signal is constantly applied to the drain electrode.
A lighting point defect results. The above defects are defect inspections of thin film transistors.
Observation of the post-defect point with a microscope reveals that in most cases
The cause and location of defects such as objects, pinholes,
You can check. The number of defects as described above depends on process management.
However, as a display, no line defect is allowed,
Although it is necessary to reduce the point defect to about 0.01% or less,
At present, 0 is found in substrates with 200 or more lines.
Includes ~ several line defects and 0.1 ~ 3% point defects
Often low cell yield, active matrix
Is a major problem that hinders the practical use of
I was The number of defects is determined by the thin film transistor fabrication process.
Process by reducing the number of processes.
The thin film transistor has two masks as shown in FIG.
Process that is advantageous for reducing the defect occurrence rate because it can be created by
It is. However, a thin film transistor with a simplified process
The drain current of the n-th source as shown in FIG.
The switch formed by the bus line (4) and the drain electrode (10)
Switching transistor (30) (source bus
The distance between the in (4) and the drain electrode (10) is L₁ , Gate power
When the width of the pole (12) is W,The entire gate bus line is
Acting as a gate electrode,Channel width / ch
Channel length = W / L₁ ) And (n + 1) th source
The strike formed by the bus line (5) and the drain electrode (10)
Ray transistor (32) (source bus line (5) and drain
Distance to the electrode (10)_Two As channel width / ch
Channel length = W / L_Two ). The drain by the stray transistor (32)
In-current depends on thin-film transistor design value
Is usually 5 to 5
20%, which is not a big problem in binary display.
However, when performing gradation display, the signal of the adjacent source line
As a result, a clear display could not be obtained, which was a problem. On the other hand, the shape of the transistor is
The current is small enough to operate the pixel.
There was also a problem that it could not be taken. The present invention relates to a conventional thin film transistor as described above.
This was done to eliminate the disadvantages of the star.
When forming thin film transistors on a single insulating substrate
The production yield is good, the structure is simple and the storage
Used in image display devices without being affected by transistors, etc.
Having thin film transistors that can provide good images when
LCD displayPlaceThe purpose is to provide. [0020] SUMMARY OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device on an insulating substrate.
Source bus line and gate bus lineAnd display pixel electrode
And a thin film transistor are provided,Drain electrode and source
Source electrode, gate electrode, and semiconductor layer.Is a thin film transistor
The drain electrode is connected to the display pixel electrode.
Connected to the source bus lineSource electrodeButOne pixel
One or more perProvided, thin film per pixel
Multiple transistors are configured, Gate bus lineButSaw
Electrode and source bus lineToIntersectionPlaced and game
A part of the bus line is used as a gate electrode,
The semiconductor layer is disposed between the conductive substrate and the gate electrode,
The channel of the thin film transistor is formed in the conductor layer,Duplicate
Forming severalIsAdjacent to the source electrodedidPair of
whileOrLocated closest to the source bus linedidPrevious
The source electrode and itself can act as a source electrode
Between the source bus lineProvided with a drain electrode
A liquid crystal display device, wherein a defect occurs in the source electrode.
The connection between the source and the source bus line is disconnected.
Pixel repair was doneLiquid crystal display device characterized by the following:Place
Toprovide. Hereinafter, the liquid crystal display device according to the present invention will be described.In placeAdopt
Thin film transistorsOfRefer to the drawings for representative examples.
I will explain. FIG. 1 shows a thin film transistor obtained by the present invention.
FIG. 2 is a cross-sectional view of the AA 'plane of FIG.
is there. In the figure, an insulating substrate of quartz, glass, etc.
On the surface of (1), indium tin oxide (I
TO), etc., and an electrode made of a transparent conductive film.
Surface, polysilicon, amorphous silicon, Cd
Semiconductors such as Se are doped with P, As, B, etc.
An n-type or P-type semiconductor layer (16) is formed, respectively.
You. The thus formed, doped
The semiconductor layer (16) and the transparent electrode are simultaneously formed as shown in FIG.
Pattern, and the display pixel electrode (15)
An in (4) is formed. Display of the source bus line (4)
At a position near the upper left corner of the pixel electrode (15), the source
The second source electrode provided substantially parallel to the line (4).
A pole (8), the second source electrode (8) and the source bus
And source connection electrodes (9) connecting the
You. Also, the end of the upper left corner of the display pixel electrode (15) is as described above.
Between the source bus line (4) and the second source electrode (8)
Drain electrode (10) provided so as to be sandwiched
Is formed. On this substrate, polysilicon, amorphous
Semiconductor layer (2) of silicon, CdSe, etc., followed by SiO
_Two , Si_Three N_Four Gate insulating film (1
1) In addition, gate electrode metal such as Al and Cr is deposited
Then, the metal is continuously formed in the pattern of the gate electrode (12) shown in FIG.
Etch layers, insulating layers, semiconductor layers,Gate bus
Part of ryeGate electrode (12) and insulating layer (11), semiconductor
Body layer (2)With almost the same patternForm. After that, continuously except for the gate electrode pattern
Dope over exposed display electrode source bus line, etc.
The etched semiconductor layer is also removed by etching. Saw
Intersects spatially with the gate electrode (12) of the bus line (4)
The portion functions as a first source electrode (7). With such a configuration, the drain
The source electrode (10) has a first source electrode (7) and a second source electrode.
A source signal is supplied from the electrode (8). Immediately
That is, the above-described channel width and chip of the thin film transistor are used.
The channel length ratio (W / L) is
This means that it has doubled. In this case, the drain electrode (10) is connected to the second source.
(8) source bus line by source electrode (8).
(N + 1) th because it is electrically disconnected from
Of source bus line (5) and stray transistor
And the display pixel electrode (15) is no.
Only the signal of the source bus line (4) of the
Display can be obtained. FIG. 3 shows the structure of the source electrode.
As in the second source electrode (8), the first source electrode
(7) can also be shaped to connect to the source connection electrode (9).
It is possible, in this case, such as repairing when there is a defect
It is effective in the case. [0029]The example of FIG. 4 is shown as a reference example. Multiple thin
The method of forming a membrane transistor isConventional coplanar
And staggered type thin film transistors.
You. For example, a thin film transistor having a coplanar structure
At the source bus line (3) as shown in FIG.
The two source electrodes (7) and (8) provided at right angles
Therefore, the shape with the drain electrode (10) sandwiched
Or parallel to the source bus line (3) as shown in FIG.
The source electrode (8) protruding from the
It may have a shape in which the poles (10) are sandwiched. These coplanar and staggered structures
Stray like the conventional simplified pattern
The effect of the transistor is not beginning, but the present inventionAs well as
Providing several thin film transistorsBy having a structure
Ratio of channel width to channel length of thin film transistor
(W / L) is twice as large as the conventional one.
If there is a defect, the structure will be easy to take effective measures.
ing. Next, when there is a defect in the thin film transistor
The method of repairing is described.FIG. 6 is an example of the present invention,
7 and 8 are reference examples.The present inventor has made numerous thin film
Various defects occur as a result of making a transistor substrate
Locations are random and close to thin film transistors are missing.
The probability of falling has been found to be extremely low. Take
In view of the facts, the present invention has been made. The aforementioned lack
Source-gate short circuit has the highest probability of occurrence
Major defects in lighting line defects
Was the cause. On the other hand, the characteristics of the thin film transistor are good and small.
Sufficient drain current can be obtained even with a simple W / L structure
Case and within two source / gate overlaps
On the other hand, a short-circuit point as shown by reference numeral (17) in FIGS.
If so, as shown by reference (18),
The pole (7) or (8) or the gate electrode (12) in any way
Can be cut with At this time, the remaining source is
Source signal can be input only from electrode (8) or (7)
When displaying binary values if the performance of the transistor is sufficient
Has no problem at all. Also, even when performing gradation display,
Although this is different from the original gradation, the difference is almost
Almost unrecognizable and significantly more
Image value can be improved. As shown in FIG. 9, two source electrodes are provided.
Make sure only one of (7 ') and (8) is electrically insulated.
As a result of the inspection, as shown by reference numeral (17) in FIG.
Thin film transistor with short-circuit defect between source and gate
Of the source electrode (8) from the root as shown by the reference numeral (18).
Cut the other saw that was previously electrically insulated
Electrodes (7 ') are electrically connected as shown by the reference numeral (19).
To restore the function of the transistor.
You. In the simplified pattern described above,
Is the second source closer to the adjacent source bus line (5)
When the electrode (8) is cut, the repaired pixel
Affected by the Gesta, but with a few scattered
The restoration pixel is hard to distinguish from the others, and the effect of restoration is
It is on the street. The above description has been made with respect to a simplified pattern.
However, it is not limited to the structure of the thin film transistor.
It can also be applied to molds and staggered molds. Up to the above, one drain electrode per pixel
One case has been described, but then
Thin-film transistor with simplified electrodes
Will be described. When the performance of the thin film transistor is insufficient
Represents two source voltages per pixel as shown in FIG.
Sandwiched by poles (7), (8), (34), (36), (37), (39)
A plurality of drain electrodes (10), (35), and (38)
It is effective to provide two thin film transistors. That is, it is necessary to provide a plurality of thin film transistors.
And the drain current obtained by
The number of transistors, and sufficient drain voltage required for display.
You will be able to get the flow. Thin in this structure
If a defect is found in the membrane transistor, it is shown in FIG.
Cut the drain or source electrode as
It is possible to electrically insulate and repair membrane transistors
is there. For example, as shown in FIG.
Source-gate short circuit (17) occurs, causing a drain electrode (35)
A gate-drain short circuit (20) occurs and the source electrode
(34) and the drain electrode (35) are denoted by reference numerals (18) and (21), respectively.
In the case of cutting, ie, three thin film transistors
If one of them is defective and cut off, the display
2/3 of the drain current can be obtained at the elementary electrode (15).
Therefore, the difference between the display characteristics of this pixel and other pixels is
Fewer and higher quality images.
You. When the performance of the thin film transistor is sufficient
Represents two source voltages per pixel as shown in FIG.
Plurality of drain electrodes sandwiched by poles
Thin film transistors, and a source electrode and a drain.
Are connected to the source bus line and the display pixel electrode (1
5) The thin film transistor (24) electrically insulated from
If it is included, the effect is even greater. That is, each pixel is electrically connected.
Electrically insulated slaves other than the main thin film transistor (23)
Of thin film transistors (24)
If a defect is found in the register (23), it is shown in FIG.
As described above, the drain or source electrode of the transistor (23)
Part or both of them as shown by symbols (18) and (21).
(18), (21) to make it electrically insulated,
Next, the thin film transistor (2
Connect the source electrode of 4) to the source connection as shown by reference
Electrodes, and the drain electrode is connected as shown by reference numeral (19).
By connecting to the display pixel electrode (15) respectively,
The subordinate thin film transistor (24) is operated. The thin film transistor having the above structure
In the case of, the good pixels from the beginning and the thinned
Since the number of membrane transistors can be the same, the display pixel electrode (1
The drain current supplied to 5) can be exactly the same, and
The display pixel electrode (15) can receive an original source signal.
It is possible to make something with no defects on display
It is. The present invention is provided for each pixel.
The number of thin film transistors is limited to the number shown.
And drain and source electrodes that are initially insulated
Is not limited to the illustrated one. The cutting method in the above-mentioned repairing process is
Cutting method with laser trimmer, ultrasonic cutter, etc.
There is, but is not limited in any way. The second tiger
Connection method between the drain electrode of the transistor and the display pixel electrode.
Even if a small conductor is attached with a dispenser,
Gold or aluminum on the thin film transistor substrate
Glass substrates facing each other and narrow down to the desired dimensions
Laser under normal pressure or reduced pressure from the metal-coated substrate side
Irradiation and metal to desired location on thin film transistor substrate
There is a laser coating method for coating, etc.
There is no particular restriction on the law. [0047] FIG. 1 to FIG.3Shows the configuration
In the configuration example of the present invention, a high potential voltage is applied to the gate electrode (12).
Is applied to the source bus lines (3) and (4).
A first source electrode (7) and a second source electrode connected
(8) to the drain electrode (10) via the semiconductor layer (2).
Current flows and the display pixel electrode connected to the drain electrode (10).
The pole (15) has the same potential as the source bus lines (3) and (4),
When the source bus lines (3) and (4) are at a high potential,
The voltage between the display pixel electrode (15) and a common electrode (not shown) is marked.
In the case of a liquid crystal display device, the display pixel electrode (15)
And the liquid crystal switch sandwiched between the common electrodes turns on,
The pixel corresponding to the display pixel electrode (15) lights up and enters the display state.
You. The source bus lines (3) and (4) are at a low potential.
The display pixel electrode (15) also has a low potential,
The crystal switch does not turn on and corresponds to the display pixel electrode (15).
The pixel is turned off. The selection potential is supplied to other gate electrodes.
During this time, a low potential is applied to the gate electrode (12) to which a signal has already been supplied.
Is supplied and the semiconductor layer (2) has a high resistance,
The poles (7) and (8) are electrically disconnected from the drain electrode (10).
The liquid crystal switch of the pixel corresponding to the display pixel electrode (15) is
The previous state is continued by the liquid crystal capacitance or the additional capacitance. In the above switching operation,
As described above, the channel width / channel length (W /
L) is large and the drain electrode (10) is the second source
(N + 1) th source bus line by electrode (8)
Sufficient drain because it is electrically isolated from (5)
While the current amount is obtained, the drain electrode (10)
+1) th source bus line (5) and stray transition
No switching and good switching behavior
A crop is obtained. FIG.To 6As shown
If a source-gate short circuit (17) occurs,
As described above, the source electrode (7) isSource bus line (4)Or
Repair by cutting as shown by reference numeral (18) in the figure.
And a normal switching operation can be obtained. As shown in FIG. 9, one source electrode (8)
Only when connected to the source bus line (4).
The switching operation is the same, and between the source and gate.
If a short circuit (17) occurs at the source electrode (8),
Disconnect the electrode (8) from the source bus line (4) and
Source electrode (7 ') to the source bus line (4).
More repairable and normal switching behavior
The same is true for As shown in FIG. 11, a plurality of drain electrodes (1
(0), (35), and (38) are replaced with two source electrodes (7), (8);
4), (36); the configuration provided between (37) and (39) is sufficient
Drain current is obtained and good display is obtained. As described above, the source-gate short-circuit (1
7) or when a gate-drain short circuit (20) occurs
Is the source electrode (34) or drain electrode where the defect occurred
(35) should be cut as shown by reference numerals (18) and (21), respectively.
Thus, the defect can be repaired. As shown in FIG. 13, a spare thin film transistor
Also in the case of a configuration in which a star (24) is provided, the thin film transistor
Star switching operation, repair method when a defect occurs
The law is similar. In this case, as described above,
The amount of drain current is the same as before repairing
Therefore, a stable display can be obtained. As described above, according to the present invention, a certain display pixel
If a defect occurs in the pixel, apply a voltage to the pixel.
So that the voltage from the source bus line can be applied.
From the adjacent source bus line
Compared to the method of applying voltage, more complete removal of defects and
Repair is possible. Next, the present inventionAdopted for liquid crystal display
WasAn example of manufacturing and repairing a thin film transistor will be described. [0057] Example (Example 1) First, a 1000 mm thick IT on a 50 mm square glass substrate
O, 500Ån⁺ After coating with a-Si, as shown in FIG.
Source bus lines (4), (5) and source connection electrodes
(9), source electrode (8) and drain electrode (10), display pixel
The electrode (15) was patterned. At that time, drain electrode (10)
Was formed in a structure sandwiched between two source electrodes (7) and (8). Next, 2000% of a-Si and 2000% of a-Si
After coating the SiON film by P-CVD, the gate electrode
3000 min was coated with minium. Using photoresist
Aluminum, a-S in the pattern of the gate electrode (12)
i, etch SiON film and then n on ITO⁺ a-
Etch the Si film as well to form a 200 x 200 pixel thin film
Completed the transistor. The thin film transformer thus formed on the substrate
When the characteristics of the transistor were measured, the drain current
Approximately twice the conventional simplified pattern is obtained, and a certain pixel
The characteristics of the thin film transistor depend on the adjacent source bus line.
The signal was not affected at all. Poly on the above substrate
Liquid crystal display panel is assembled by coating the alignment film of amide
The lighting inspection was performed.
Sharper and more accurate image than the source gate
Line defects due to short circuit between gate and drain
There were two lighting defects due to the short circuit. (Example 2) As shown in FIG.
Source electrodes (10) connected to the source connection electrode (9)
A thin film transistor with a structure sandwiched between the electrodes (7) and (8).
After the formation, all thin film transistors were inspected.
Source-gate short circuit and one gate-drain
A short circuit was observed. A thin film transistor having three source-gate short circuits
When observing the transistor, two places were found to be the gate electrode (12) and the
One point at the intersection of one source electrode (7) and one gate electrode (12)
Black foreign matter is found at the intersection of the second source electrode (8) and
Was. Laser trimmer at the root of the source electrode where foreign matter is recognized
Cut as shown by reference numeral (18) in FIG.
(9) and the source bus line (4).
Thereafter, a liquid crystal display panel was prepared in the same manner as in Example 1.
Lighting inspection, a short circuit between the source and gate
There is no lighting point defect due to short gate-drain
Improved to a situation where there is only one lighting point defect due to short circuit
Was. The repaired pixel is carefully measured from the close distance.
When observed, the contrast is lower than other pixels
Observe from a distance of 30 cm from the eyes of the normal use distance
As long as the difference is hardly recognizable, there is no problem as an image
Turned out not to be. (Embodiment 3) While having the same film configuration as in Example 1, as shown in FIG.
Two with the drain electrode (10) connected to the source connection electrode (9)
Thin film transistor sandwiched between the source electrodes (7) and (8)
Three pixels per pixel, the source bus line of which
Close to (4), two saws with only main thin film transistor (23)
Source electrodes (7) and (8) and drain electrode (10)
Connected to bus line (4) and display pixel electrode (15)
The source / drain electrodes of the conventional thin film transistor (24)
It was made in an electrically insulated state. The thin film transistor of all the substrates thus prepared is
When the transistor was inspected, three source
Short-circuit between the gate and two gate-drain
Was. Thin film transistor with source-gate short circuit
As shown by reference numeral (18) in FIG.
Drain of thin film transistor with short-circuit between gate and drain
Connect the in-electrode to the source connection electrode (9) as shown
Cut from the display pixel electrode (15) by the laser trimmer method.
Was. Next, the first subordinate thin film transistor in the pixel
The source connection electrode of the star (26) and the main thin film transistor
Connect the source connection electrode (9) of the transistor (23)
The insulated drain electrode and display pixel electrode (15)
After aiming the laser trimmer to connect
A glass substrate coated with 5000 mm of gold is transferred to a thin film transistor.
Place the gold coated surface on the star substrate
Laser irradiation was performed. As a result, reference numerals (25) and (19) in FIG.
So that the gold in the laser-irradiated part evaporates
By re-adhering to the thin film transistor substrate, the first
The source and drain electrodes of the conventional thin film transistor (26)
Polar connections were made. In the re-inspection after this repair step, two points
Source-gate short circuit and two gate-drain
For short circuit, use the first subordinate thin film transistor (26)
Good characteristics can be obtained, but one thin film transistor
The transistor also has a first sub-thin film transistor (26).
There was a short circuit between the source and the gate. Therefore the above
The source electrode of the first thin film transistor (26) is
After cutting as indicated by reference numeral (18) in FIG.
Connect the source and drain electrodes of the transistor (27)
As shown in (25) and (22), the source connection electrode and display
It was connected to the pixel electrode (15). As a result, the display pixel electrode (15) of the pixel is
Normal drain current from the second thin film transistor (27)
Was supplied. The thin film transistor which has completed the repair step is
A liquid crystal display panel was created using the method described above and a lighting test was performed.
However, no point defects or line defects were found.
Observation was able to obtain a display without any defect. [0070] The present inventionofIn liquid crystal display devices,
The in-electrode is formed between two source electrodes
Therefore, a sufficient drain current can be supplied.
First, be completely unaffected by stray transistors
It is possible to Also, a plurality of thin film transistors are provided.
When the main thin film transistor is defective, the secondary thin film transistor
By using a transistor, an accurate source signal can be
Poles, so that defect-free thin film
It is now possible to create a transistor substrate,
And greatly contribute to lower production costs
One. Further, after repairing the defect, the same saw as before repairing is used.
A voltage can be applied to the display pixel electrode from the subthus line.
It is possible to complete restoration without any noticeable restoration marks
You.

Plan view showing one example of a thin film transistor in a liquid crystal display device BRIEF DESCRIPTION OF THE DRAWINGS [Figure 1] present invention. Sectional view showing an example of a thin film transistor in a liquid crystal display device of the present invention; FIG. Plan view showing another example of a thin film transistor in a liquid crystal display device of the present invention; FIG. FIG. 4 is a plan view showing a third example (reference example) of a thin film transistor. FIG. 5 is a plan view showing a fourth example (reference example) of a thin film transistor. FIG. 6 is a plan view showing a repair method when a short circuit between a source and a gate is found in a thin film transistor in the liquid crystal display device of the present invention. FIG. 7 is a plan view showing a repair method when a short circuit between a source and a gate is found in a thin film transistor in the liquid crystal display device of the present invention. FIG. 8 is a plan view showing a repair method when a short circuit between a source and a gate is found in a thin film transistor in the liquid crystal display device of the present invention. Plan view showing a fifth example of a thin film transistor in a liquid crystal display device of the present invention; FIG. FIG. 10 is a plan view showing a repair method when a short circuit between a source and a gate is found in the thin film transistor of FIG. 9; Figure 11 is a plan view showing a sixth example of a thin film transistor in a liquid crystal display device of the present invention. FIG. 12 is a plan view showing a repair method when the thin film transistor of FIG. 11 has a defect. Figure 13 is a plan view showing a sixth example of a thin film transistor in a liquid crystal display device of the present invention. FIG. 14 is a plan view showing a repair method when a defect is found in the thin film transistor of FIG. FIG. 15 is a plan view showing a restoring method when a further defect is found in the repaired thin film transistor. FIG. 16 is a typical equivalent circuit of an active matrix type liquid crystal display device. FIG. 17 shows a conventional coplanar thin film transistor. FIG. 18 is a sectional view of a conventional inverted staggered thin film transistor. FIG. 19 is a plan view of a conventional inverted staggered thin film transistor. FIG. 20 is a plan view of a conventional thin film transistor having a simplified pattern. [Description of Signs] 1: Insulating substrate 2: Semiconductor layer 3: Source bus line 4: Nth source bus line 5: (n + 1) th source bus line 6: Source electrode 7: First source electrode 8: Second source electrode 9: Source connection electrode 10: Drain electrode 11: Gate insulating film 12: Gate electrode 13: Gate bus line 14: Contact hole 15: Display pixel electrode 16: Doped semiconductor layer 17: Short circuit between source and gate Point 20: gate-drain short-circuit point 23: main thin film transistor 24: subordinate thin film transistor 26: first subordinate thin film transistor 27: second subordinate thin film transistor 28: liquid crystal layer 29: capacitor 30: switching transistor 31: protective film 32: Stray transistor

Claims (1)

(57) [Claims] A source bus line, a gate bus line , a display pixel electrode, and a thin film transistor are provided over an insulating substrate . A drain electrode, a source electrode, a gate electrode, and a semiconductor layer are provided in the thin film transistor.
Connected to示画pixel electrode, a source electrode connected to the source bus line is provided one or a plurality of per-pixel thin film tiger per pixel
Njisuta is more structure, the gate bus line is disposed <br/> cross to the source electrode and the source bus lines, gate electrode is a part of the gate bus line
A semiconductor layer disposed between the insulating substrate and the gate electrode;
The semiconductor layer forms the channel of the thin film transistor
Is, more between a pair of adjacent of the formed the source electrode or the source bus line and the highest source located at the bus line closer <br/> the source electrode may themselves act as a source electrode A drain electrode is provided between
A liquid crystal display device comprising: a source electrode having a defect;
Liquid crystal display equipment, characterized in that the connection is cut <br/> the pixel repair is performed between the lines. 2. Most between the positioned to the source bus line closer source electrode and itself the source bus lines which may act as a source electrode, a liquid crystal display of <br/> claim 1 wherein said drain electrode is provided only one apparatus. 3. Adjacent <br/> the drain electrode is provided between the pair, and a liquid crystal display device according to claim 1 wherein said drain electrode is provided plurality of a plurality of formed the source electrode. 4. Per pixel, the liquid crystal display device of the drain electrode 2, according to claim 1, wherein said source electrode is provided this 4. 5. Per pixel, the liquid crystal display device of the drain electrode is three, according to claim 1, wherein said source electrode is provided six. 6. The liquid crystal display device according to claim 1, wherein the source bus line, the source electrode, the drain electrode, and the display pixel electrode are formed of a transparent conductive film. 7. Source bus line or the gate bus line 200
The liquid crystal display device according to any one of the disposed above claims 1-6. 8. The cutting is performed by laser irradiation.
The liquid crystal display device according to any one of claims 1 to 7.