JP2752677B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JP2752677B2 JP2752677B2 JP1005102A JP510289A JP2752677B2 JP 2752677 B2 JP2752677 B2 JP 2752677B2 JP 1005102 A JP1005102 A JP 1005102A JP 510289 A JP510289 A JP 510289A JP 2752677 B2 JP2752677 B2 JP 2752677B2
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- resin
- semiconductor device
- pin
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造方法に関し、特に絶縁型半
導体装置の樹脂封止方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of resin sealing an insulated semiconductor device.
〔従来の技術〕 従来、この種の絶縁型半導体装置の製造方法は、第４
図（ａ）に示すように、内部放熱板３の先端部に放熱板
支持用のリード９を設けて、樹脂成形時の放熱板位置精
度を確保していた。また、樹脂成形後支持リード部９を
切断しているので、ネジ穴近傍の樹脂側面には放熱板の
一部が露出していた（第４図（ｂ））。[Prior Art] Conventionally, a method of manufacturing this type of insulated semiconductor device is described in US
As shown in FIG. 1A, a lead 9 for supporting the heat sink is provided at the tip of the internal heat sink 3 to secure the position accuracy of the heat sink during resin molding. Further, since the support lead portion 9 was cut after the resin molding, a part of the heat sink was exposed on the resin side surface near the screw hole (FIG. 4 (b)).
上述した従来の樹脂封止絶縁型半導体装置の製造方法
は、内部放熱板支持用のリードの一部が露出するため、
外部放熱板に取りつけた場合、外部放熱板〜支持用リー
ドの絶縁性能が低下するという欠点がある。In the above-described conventional method of manufacturing a resin-sealed insulating semiconductor device, a part of the lead for supporting the internal heat sink is exposed,
When attached to an external heat sink, there is a disadvantage that the insulation performance of the external heat sink to the supporting lead is reduced.
また、内部放熱板の支持用リード導出部〜外部放熱板
間距離を伸ばすため、ネジ穴近傍の内部放熱板厚を薄く
し、クランク状に曲げた部分から支持リードを導出した
放熱板を使用することが提案されているが、やはり支持
リードの露出は残るので、絶縁性能を十分向上させるこ
とができないという欠点がある。In order to extend the distance between the support lead lead-out portion of the internal heat sink and the external heat sink, the thickness of the internal heat sink near the screw hole is reduced, and a heat sink is used in which the support lead is led out from the part bent in a crank shape. However, since the support leads are still exposed, there is a disadvantage that the insulation performance cannot be sufficiently improved.
本発明の樹脂封止絶縁型半導体装置の製造方法は、ペ
レットを搭載する厚肉部と、ネジ穴近傍にクランク状の
加工を施した薄肉部から成る内部放熱板を使用し、樹脂
金型内に作りつけられた、固定ピンにより放熱板を表
面，裏面２方向から固定し、樹脂注入後硬化前に裏面固
定ピンを引き抜く工程を有している。The method of manufacturing a resin-sealed insulated semiconductor device of the present invention uses an internal heat sink composed of a thick portion on which a pellet is mounted and a thin portion in which a crank-shaped process is performed in the vicinity of a screw hole. The heat sink is fixed from the front and rear directions by the fixing pins, and the back fixing pins are pulled out before the resin is cured after the resin is injected.
固定ピンは表面から放熱板厚肉部を、裏面から放熱板
薄肉部を好ましくは保持し、固定ピン先端は円錐形で頭
部は平面となっていることが望ましい。The fixing pin preferably holds the heat radiating plate thick portion from the front surface and the heat radiating plate thin portion from the back surface, and it is desirable that the fixing pin tip is conical and the head is flat.
上述した従来の樹脂封止絶縁型半導体装置に対して、
本発明においては放熱板の支持用リードを廃止し、成形
金型内の固定ピンで位置決めを行ない、成形時，樹脂硬
化前に裏面固定ピンを抜き、裏面ピン穴を埋める。ま
た、放熱板は、ネジ穴近傍にクランク状の加工を施し裏
面固定ピンの移動量を稼いでいる。In contrast to the conventional resin-sealed insulating semiconductor device described above,
In the present invention, the support lead of the heat sink is abolished, the positioning is performed by the fixing pin in the molding die, and the back surface fixing pin is pulled out before molding the resin during molding to fill the back surface pin hole. In addition, the radiator plate is formed in a crank shape in the vicinity of the screw hole to increase the movement amount of the back surface fixing pin.
次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第１図（ａ）〜（ｄ）は、本発明の一実施例の各工程
ごとの成形金型縦断面図である。厚肉部上にペレット１
を搭載し薄肉部にクランク加工２を施した放熱板３を金
型４と固定ピン６上に置き、放熱板裏面と金型面の間を
0.2〜0.6mm程開けておく、金型５を降して金型５と固定
ピン７により放熱板３を金型内に固定する（第１図−
（ａ），（ｂ））。次に、樹脂注入口８よりエポキシ樹
脂等を注入する（第１図−（ｃ））。樹脂注入完了後、
樹脂硬化前に固定ピン６を抜き、裏面ピン穴を埋める
（第１図−（ｄ））。尚、固定ピン先端は円錐台形とし
て、放熱板との接触面積を狭くする。1 (a) to 1 (d) are longitudinal sectional views of a molding die in each step of an embodiment of the present invention. Pellets 1 on the thick part
A heat sink 3 with a thin portion subjected to crank processing 2 is placed on a mold 4 and a fixing pin 6, and a gap between the back surface of the heat sink and the mold surface is provided.
Leave the mold 5 open for about 0.2 to 0.6 mm, lower the mold 5, and fix the heat sink 3 in the mold with the mold 5 and the fixing pins 7 (Fig. 1-
(A), (b)). Next, an epoxy resin or the like is injected from the resin injection port 8 (FIG. 1- (c)). After resin injection,
Before the resin is cured, the fixing pin 6 is pulled out and the back surface pin hole is filled (FIG. 1- (d)). In addition, the tip of the fixing pin has a truncated cone shape to reduce the contact area with the heat sink.
このようにして得られた樹脂封止半導体装置の透視斜
視図を第２図に示す。FIG. 2 shows a transparent perspective view of the resin-encapsulated semiconductor device thus obtained.
第３図（ａ）〜（ｄ）は本発明の他の実施例の各工程
での成形金型縦断面図である。まず、金型内に放熱板３
を固定するピン6,7で固定する（第３図−（ａ），
（ｂ））。次に樹脂注入口８よりエポキシ樹脂等を注入
する（第３図−（ｃ））。樹脂注入完了後樹脂硬化前に
固定するピン6,7を両方抜く（第３図−（ｄ））。3 (a) to 3 (d) are longitudinal sectional views of a molding die in each step of another embodiment of the present invention. First, heat sink 3 in the mold
(Fig. 3 (a),
(B)). Next, an epoxy resin or the like is injected from the resin injection port 8 (FIG. 3C). After the resin injection is completed and before the resin is cured, both pins 6 and 7 to be fixed are pulled out (FIG. 3 (d)).
尚、固定ピン6,7の先端は、円錐台形として放熱板の
移動を防止する。The tips of the fixing pins 6 and 7 have a truncated cone shape to prevent movement of the heat sink.
本実施例においては、表裏両面の固定ピンを抜くた
め、完全絶縁型半導体装置となる。In the present embodiment, since the fixing pins on both the front and back surfaces are pulled out, a completely insulated semiconductor device is obtained.
以上説明したように本発明は、放熱板を金型4,5に作
りつけられた固定ピン6,7により、金型内に固定して樹
脂成形するため、金型内での放熱板位置精度は、従来並
となり、固定ピン６を成形途中で抜き裏面ピン穴を樹脂
で埋め、絶縁生能を向上する。As described above, according to the present invention, since the heat sink is fixed in the mold by the fixing pins 6 and 7 formed in the molds 4 and 5 and resin molded, the position accuracy of the heat sink in the mold is improved. Is the same as the conventional one, the fixing pin 6 is removed during molding, and the back surface pin hole is filled with resin to improve the insulating ability.
尚、放熱板先端がクランク状に加工され、薄肉部を上
部の金型５に近づけるため、固定ピン６の移動量は大き
くなり、固定ピン抜きによるボイド，ピンホールの発生
を抑えることができる。Since the tip end of the heat radiating plate is processed into a crank shape and the thin portion is brought closer to the upper mold 5, the moving amount of the fixing pin 6 is increased, and the generation of voids and pin holes due to the removal of the fixing pin can be suppressed.
また、ピン先端部を円錐台形にし放熱板との接触面積
を狭くして固定ピン６の移動時に、放熱板が固定ピン６
の移動方向について行くことを抑えることができる。Further, the tip of the pin has a truncated conical shape to reduce the contact area with the radiator plate so that the radiator plate can
It is possible to suppress going in the moving direction of the vehicle.
固定ピン７は放熱板厚肉部面を保持することにより、
放熱板位置精度を向上させることができる。The fixing pin 7 holds the heat radiating plate thick part surface,
Heat sink position accuracy can be improved.
第１図（ａ）〜（ｄ）は本発明の一実施例の各工程ごと
の成形金型縦断面図である。第２図は第１実施例の製品
透視図である。第３図（ａ）〜（ｄ）は、本発明の他の
実施例の各工程ごとの成形金型縦断面図である。第４図
（ａ）は、従来品の製品透視図である。第４図（ｂ）は
第４図（ａ）の外形図である。 １……ペレット、２……クランク加工、３……放熱板、
４……金型、５……金型、６……固定ピン、７……固定
ピン、８……樹脂注入口、９……放熱板支持リード。1 (a) to 1 (d) are longitudinal sectional views of a molding die in each step of an embodiment of the present invention. FIG. 2 is a perspective view of the product of the first embodiment. 3 (a) to 3 (d) are longitudinal sectional views of a molding die for each step of another embodiment of the present invention. FIG. 4A is a perspective view of a conventional product. FIG. 4 (b) is an outline drawing of FIG. 4 (a). 1 ... pellet, 2 ... crank processing, 3 ... heat sink,
4 ... mold, 5 ... mold, 6 ... fixing pin, 7 ... fixing pin, 8 ... resin injection port, 9 ... heat sink support lead.
Claims (1)
て、内部放熱板にペレットを搭載する厚肉部と先端部に
クランク状の加工を施した薄肉部とを少なくとも設け、
樹脂封止金型内に移動可能に設けられた長さの異なる２
組の固定ピンを用いて表面からは短い方のピンで前記放
熱板厚肉部を固定し、裏面からは長いピンで前記放熱板
薄肉部を保持するように固定し、樹脂注入完了後硬化前
に少なくとも裏面の固定ピンを引き抜く工程を有するこ
とを特徴とする半導体装置の製造方法。1. A resin sealing method for an insulated semiconductor device, wherein at least a thick portion on which a pellet is mounted on an internal heat sink and a thin portion on which a crank-shaped process is applied at a tip end are provided.
2 of different length movably provided in a resin sealing mold
Using a set of fixing pins, fix the heat sink thick part with the shorter pin from the front, and fix the heat sink thin part with the long pin from the back to fix the heat sink thin part after completion of resin injection and before curing A method of extracting at least a fixing pin on the back surface of the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1005102A JP2752677B2 (en) | 1989-01-11 | 1989-01-11 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1005102A JP2752677B2 (en) | 1989-01-11 | 1989-01-11 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02184040A JPH02184040A (en) | 1990-07-18 |
| JP2752677B2 true JP2752677B2 (en) | 1998-05-18 |
Family
ID=11602006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1005102A Expired - Lifetime JP2752677B2 (en) | 1989-01-11 | 1989-01-11 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2752677B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1247649B (en) * | 1990-10-31 | 1994-12-28 | Sgs Thomson Microelectronics | RESIN ENCAPSULATION PROCEDURE OF A POWER SEMICONDUCTOR DEVICE MOUNTED ON A HEAT SINK REMOVING THE WIRES FROM THE HEAT SINK THROUGH THE ACTION OF THE COUNTER-MOLD WHEN THE MOLD IS CLOSED |
| IT1252575B (en) * | 1991-12-20 | 1995-06-19 | Sgs Thomson Microelectronics | MOLD AND PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR PLASTIC DEVICES, WITH VISIBLE METALLIC DISSIPATOR FOR WELDING CONTROL |
| DE112016006381T5 (en) | 2016-02-09 | 2018-10-18 | Mitsubishi Electric Corporation | POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR |
| US11062916B2 (en) * | 2017-08-23 | 2021-07-13 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor device |
| US10777489B2 (en) | 2018-05-29 | 2020-09-15 | Katoh Electric Co., Ltd. | Semiconductor module |
| JP6437701B1 (en) * | 2018-05-29 | 2018-12-12 | 新電元工業株式会社 | Semiconductor module |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60130129A (en) * | 1983-12-16 | 1985-07-11 | Nec Corp | Method for sealing isolation-type semiconductor element with resin |
| JPS6132434A (en) * | 1984-07-24 | 1986-02-15 | Sanken Electric Co Ltd | Manufacture of resin molded semiconductor device |
| IT1215023B (en) * | 1986-08-27 | 1990-01-31 | Sgs Microelettronica Spa | RESIN AND ELECTRONICALLY ISOLATED ENCAPSULATED DEVICE AND SEMICONDUCTOR AND PROCESS FOR LASUA MANUFACTURE |
-
1989
- 1989-01-11 JP JP1005102A patent/JP2752677B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02184040A (en) | 1990-07-18 |
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