JP2738091B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JP2738091B2 JP2738091B2 JP32695889A JP32695889A JP2738091B2 JP 2738091 B2 JP2738091 B2 JP 2738091B2 JP 32695889 A JP32695889 A JP 32695889A JP 32695889 A JP32695889 A JP 32695889A JP 2738091 B2 JP2738091 B2 JP 2738091B2
- Authority
- JP
- Japan
- Prior art keywords
- tape
- semiconductor chip
- semiconductor
- chip
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 119
- 238000004519 manufacturing process Methods 0.000 title description 10
- 238000000034 method Methods 0.000 title description 8
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000007796 conventional method Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Dicing (AREA)
Description
【発明の詳細な説明】 〔概要〕 半導体ウエーハを分割して半導体チップに分離するウ
エーハダイシング方法の改良に関し、 半導体ウエーハを分割して分離された半導体チップを
UVテープから取り外してチップトレイに搬送する際に、
半導体チップに生じているカケが他の半導体チップの表
面に落下するのを防止することが可能となる半導体装置
の製造方法の提供を目的とし、 第１のUVテープに半導体ウエーハの背面を貼付し、前
記半導体ウエーハを個々の半導体チップに分割した後、
前記半導体チップ及び第１のUVテープを洗浄し、前記半
導体チップの背面に貼付してある前記第１のUVテープに
紫外線を照射した後、前記半導体チップの表面に別の第
２のUVテープを貼付する工程と、前記半導体チップの背
面に貼付され、紫外線を照射された前記第１のUVテープ
を半導体チップの背面から剥離する工程と、前記第２の
UVテープに貼付されている前記半導体チップの背面の縁
部分を面取りブレードを用いて面取り加工する工程と、
前記半導体チップ及び第２のUVテープを洗浄し、前記半
導体チップの表面に貼付されている前記第２のUVテープ
に紫外線を照射した後、前記半導体チップの背面に更に
別の第３のUVテープを貼付し、前記第２のUVテープを前
記半導体チップの表面から剥離する工程とを含むよう構
成する。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to an improvement in a wafer dicing method for dividing a semiconductor wafer into semiconductor chips and separating the semiconductor chips into semiconductor chips.
When removing from UV tape and transporting to the chip tray,
In order to provide a method of manufacturing a semiconductor device capable of preventing chips generated on a semiconductor chip from falling onto the surface of another semiconductor chip, the back surface of a semiconductor wafer is attached to a first UV tape. After dividing the semiconductor wafer into individual semiconductor chips,
After washing the semiconductor chip and the first UV tape and irradiating the first UV tape attached to the back surface of the semiconductor chip with ultraviolet light, another second UV tape is applied to the surface of the semiconductor chip. Attaching the first UV tape, which is attached to the back surface of the semiconductor chip and irradiated with ultraviolet light, from the back surface of the semiconductor chip; and
A step of chamfering the edge portion of the back surface of the semiconductor chip attached to the UV tape using a chamfering blade,
After cleaning the semiconductor chip and the second UV tape, and irradiating the second UV tape adhered to the surface of the semiconductor chip with ultraviolet light, another third UV tape is further applied to the back surface of the semiconductor chip. And peeling off the second UV tape from the surface of the semiconductor chip.
本発明は、半導体装置の製造方法に係り、特に半導体
ウエーハを分割して半導体チップに分離するウエーハダ
イシング方法の改良に関するものである。The present invention relates to a method for manufacturing a semiconductor device, and more particularly to an improvement in a wafer dicing method for dividing a semiconductor wafer into semiconductor chips.
近年半導体装置の高集積化に伴い高信頼性が要求され
ており、このため半導体ウエーハの全板厚をダイシング
溝により分割するようフルカットし、分離された半導体
チップをピックアップしてチップトレイに並べる方法が
主流になりつつあるが、この半導体チップのピックアッ
プの際に、このダイシング溝と背面との交線に生じてい
るカケが半導体チップから分離して他の半導体チップの
表面に落下すると、アセンブリ工程におけるワイヤ間の
短絡や半導体チップのパッド間の短絡の要因となること
がある。In recent years, high reliability has been required along with the high integration of semiconductor devices. For this reason, the full thickness of a semiconductor wafer is fully cut so as to be divided by dicing grooves, and the separated semiconductor chips are picked up and arranged on a chip tray. Although the method is becoming mainstream, when the chip generated at the intersection of the dicing groove and the back surface separates from the semiconductor chip and drops on the surface of another semiconductor chip during pickup of the semiconductor chip, the assembly is performed. This may cause a short circuit between wires in a process or a short circuit between pads of a semiconductor chip.
以上のような状況から、半導体ウエーハのダイシング
溝と背面との交線に生じたカケが、半導体チップと分離
して他の半導体チップの表面に落下するのを防止するこ
とが可能な半導体装置の製造方法が要望されている。From the above situation, a semiconductor device capable of preventing chips generated at an intersection between a dicing groove of a semiconductor wafer and a back surface from being separated from a semiconductor chip and falling onto the surface of another semiconductor chip. There is a need for a manufacturing method.
従来の半導体装置の製造方法を第２図により工程順に
説明する。A conventional method for manufacturing a semiconductor device will be described in the order of steps with reference to FIG.
まず第２図（ａ）に示すようにUVテープ13に半導体ウ
エーハ11の背面を貼付し、図示しないダイシング装置を
用いて第２図（ｂ）に示すようにブレード14によりUVテ
ープ13に20〜50μｍ程度切り込むように全板厚を分割し
てダイシング溝11aを形成して個々の半導体チップ12に
分割し、純水を用いるスピン洗浄によりダイシング工程
で生じた粉を除去する。First, as shown in FIG. 2 (a), the back surface of the semiconductor wafer 11 is adhered to a UV tape 13 and, using a dicing device (not shown), the UV tape 13 is applied to the UV tape 13 with a blade 14 as shown in FIG. 2 (b). A dicing groove 11a is formed by dividing the entire thickness so as to cut about 50 μm, and the semiconductor chip 12 is divided into individual semiconductor chips 12, and powder generated in the dicing step is removed by spin cleaning using pure water.
このダイシング工程においては、半導体ウエーハ11の
背面とダイシング溝11aとの交線に図に示すようなカケ1
2aが生じている。In this dicing step, the chip 1 as shown in the figure is drawn at the intersection of the back surface of the semiconductor wafer 11 and the dicing groove 11a.
2a has occurred.
UVテープ13に紫外線を照射して硬化させた後、第２図
（ｃ）に示すようにこの分割された半導体チップ12をUV
テープ13を貫通するピックアップ針15で突き上げて、半
導体チップ12をUVテープ13から剥離して半導体チップ12
を収納する図示しないチップトレイに搬送して収納して
いるが、この際に半導体チップ12に生じているカケ12a
が他の半導体チップの表面に落下して傷，短絡等の障害
の原因となっている。After irradiating the UV tape 13 with ultraviolet rays to cure the semiconductor chip 12, the divided semiconductor chips 12 are UV-cured as shown in FIG.
The semiconductor chip 12 is peeled off from the UV tape 13 by pushing up with a pickup needle 15 penetrating the tape
Is transported to and stored in a chip tray (not shown).
Is dropped on the surface of another semiconductor chip, causing a failure such as a scratch or a short circuit.
以上説明した従来の半導体装置の製造方法において
は、半導体チップをUVテープから剥離して半導体チップ
を収納するチップトレイに搬送して収納する際に、半導
体チップに生じているカケが他の半導体チップの表面に
落下して傷，短絡等の障害が発生するという問題点があ
った。In the conventional method for manufacturing a semiconductor device described above, when a semiconductor chip is peeled off from the UV tape and transported to a chip tray for storing the semiconductor chip and stored therein, the chip generated on the semiconductor chip may be damaged by another semiconductor chip. There is a problem that a fault such as a scratch and a short circuit occurs when the device falls on the surface of the device.
本発明は以上のような状況から、半導体ウエーハを分
割して分離された半導体チップをUVテープから取り外し
てチップトレイに搬送する際に、半導体チップに生じて
いるカケが他の半導体チップの表面に落下するのを防止
することが可能となる半導体装置の製造方法の提供を目
的としたものである。According to the present invention, when the semiconductor chip divided from the semiconductor wafer is separated from the UV tape and transferred to the chip tray, the chip generated on the semiconductor chip may be removed from the surface of another semiconductor chip. It is an object of the present invention to provide a method for manufacturing a semiconductor device that can prevent the semiconductor device from falling.
本発明の半導体装置の製造方法は、第１のUVテープに
半導体ウエーハの背面を貼付し、この半導体ウエーハを
個々の半導体チップに分割した後、この半導体チップ及
び第１のUVテープを洗浄し、この半導体チップの背面に
貼付してあるこの第１のUVテープに紫外線を照射した
後、この半導体チップの表面に別の第２のUVテープを貼
付する工程と、この半導体チップの背面に貼付され、紫
外線を照射されたこの第１のUVテープを半導体チップの
背面から剥離する工程と、この第２のUVテープに貼付さ
れているこの半導体チップの背面の縁部分を面取りブレ
ードを用いて面取り加工する工程と、この半導体チップ
及び第２のUVテープを洗浄し、この半導体チップの表面
に貼付されているこの第２のUVテープに紫外線を照射し
た後、この半導体チップの背面に更に別の第３のUVテー
プを貼付し、この第２のUVテープをこの半導体チップの
表面から剥離する工程とを含むよう構成する。In the method of manufacturing a semiconductor device according to the present invention, the back surface of a semiconductor wafer is attached to a first UV tape, and after dividing the semiconductor wafer into individual semiconductor chips, the semiconductor chip and the first UV tape are washed. After irradiating the first UV tape attached to the back surface of the semiconductor chip with ultraviolet light, attaching another second UV tape to the surface of the semiconductor chip, and attaching the second UV tape to the back surface of the semiconductor chip. Peeling off the first UV tape irradiated with ultraviolet rays from the back surface of the semiconductor chip, and chamfering an edge portion of the back surface of the semiconductor chip attached to the second UV tape using a chamfering blade. Cleaning the semiconductor chip and the second UV tape, and irradiating the second UV tape attached to the surface of the semiconductor chip with ultraviolet rays. Attaching another third UV tape to the surface, and peeling off the second UV tape from the surface of the semiconductor chip.
即ち本発明においては、UVテープに貼付した半導体ウ
エーハを個々の半導体チップに分割した後、この半導体
ウエーハの背面に貼付してあるこのUVテープに紫外線を
照射し、この半導体ウエーハの背面に別のUVテープを貼
付し、この半導体ウエーハの背面に貼付され、紫外線を
照射されたUVテープを半導体ウエーハの背面から剥離
し、このUVテープに貼付されているこの半導体ウエーハ
の背面とこのダイシング溝との交線を面取りブレードを
用いて面取り加工し、この半導体ウエーハの表面に貼付
されているこのUVテープに紫外線を照射した後、この半
導体ウエーハの背面に更に別のUVテープを貼付し、この
紫外線を照射したUVテープをこの半導体ウエーハの表面
から剥離するので、この半導体チップのカケを完全に面
取りブレードで取り去ることが可能となり、半導体チッ
プの搬送時にカケが他の半導体チップの表面に落下する
のを防止することができ、傷，短絡等の障害を防止する
ことが可能となる。That is, in the present invention, after dividing the semiconductor wafer attached to the UV tape into individual semiconductor chips, the UV tape attached to the back of the semiconductor wafer is irradiated with ultraviolet light, and another semiconductor wafer is attached to the back of the semiconductor wafer. A UV tape is adhered, the UV tape that is adhered to the back of the semiconductor wafer and irradiated with ultraviolet rays is peeled from the back of the semiconductor wafer, and the dicing groove between the back of the semiconductor wafer adhered to the UV tape and the dicing groove is formed. The intersection line is chamfered using a chamfering blade, and after irradiating the UV tape attached to the surface of the semiconductor wafer with ultraviolet light, another UV tape is attached to the back surface of the semiconductor wafer and the ultraviolet light is applied. The irradiated UV tape is peeled from the surface of this semiconductor wafer, so the chip of this semiconductor chip must be completely removed with a chamfer blade. This makes it possible to prevent chips from dropping onto the surface of another semiconductor chip when the semiconductor chip is transported, thereby preventing obstacles such as scratches and short circuits.
以下第１図により本発明による一実施例を工程順に詳
細に説明する。Hereinafter, an embodiment of the present invention will be described in detail with reference to FIG.
まず第１図（ａ）に示すようにUVテープ３に半導体ウ
エーハ１の背面を貼付し、図示しないダイシング装置を
用いて第１図（ｂ）に示すようにブレード４によりUVテ
ープ３に20〜50μｍ程度切り込むように半導体ウエーハ
１の全板厚を分割してダイシング溝1aを形成して個々の
半導体チップ２に分離し、純水を用いるスピン洗浄によ
りダイシング工程で生じた粉を除去する。First, the back surface of the semiconductor wafer 1 is affixed to the UV tape 3 as shown in FIG. 1 (a), and the UV tape 3 is applied to the UV tape 3 by a blade 4 as shown in FIG. The whole thickness of the semiconductor wafer 1 is divided so as to cut into about 50 μm, dicing grooves 1a are formed and separated into individual semiconductor chips 2, and the powder generated in the dicing step is removed by spin cleaning using pure water.
このダイシング工程においては、半導体ウエーハ１の
背面とダイシング溝1aとの交線に図に示すようなカケ2a
が生じている。In this dicing step, a chip 2a as shown in the figure is formed at the intersection of the back surface of the semiconductor wafer 1 and the dicing groove 1a.
Has occurred.
UVテープ３に紫外線を照射して硬化させた後、第１図
（ｃ）に示すように、この分割された半導体チップ２の
表面にUVテープ５を貼付する。After the UV tape 3 is cured by irradiating it with ultraviolet light, a UV tape 5 is attached to the surface of the divided semiconductor chip 2 as shown in FIG. 1 (c).
つぎにこのUVテープ３を剥離し、半導体チップ２の背
面を上にして図示しないダイシング装置のテーブルに載
置し、第１図（ｄ）に示すように、面取りブレード６を
用いて半導体チップ２の背面とダイシング溝1aとの交線
を面取り加工してこの部分に生じていたカケ2aを除去
し、純水を用いるスピン洗浄によりダイシング工程で生
じた粉を除去する。Next, the UV tape 3 is peeled off, and placed on a table of a dicing apparatus (not shown) with the back surface of the semiconductor chip 2 facing up, and as shown in FIG. The intersecting line between the back surface and the dicing groove 1a is chamfered to remove the chip 2a generated in this portion, and the powder generated in the dicing step is removed by spin cleaning using pure water.
ついでこのUVテープ５に紫外線を照射して硬化させた
後、第１図（ｅ）に示すように半導体チップ２の背面に
UVテープ７を貼付し、UVテープ５を剥離する。Next, the UV tape 5 is cured by irradiating it with ultraviolet rays, and then, as shown in FIG.
The UV tape 7 is attached, and the UV tape 5 is peeled off.
最後にこのUVテープ７に紫外線を照射して硬化させた
後、第１図（ｆ）に示すように半導体チップ２をUVテー
プ７を貫通するピックアップ針８で突き上げて、半導体
チップ２をUVテープ７から剥離して半導体チップを収納
するチップトレイに搬送して収納する。Finally, the UV tape 7 is cured by irradiating it with ultraviolet rays. Then, as shown in FIG. 1 (f), the semiconductor chip 2 is pushed up by a pick-up needle 8 penetrating the UV tape 7, and the semiconductor chip 2 is The semiconductor chip is peeled off from the chip 7 and transferred to and stored in a chip tray for storing semiconductor chips.
このように半導体ウエーハ１をダイシングにより分割
して半導体チップ２に分離するのにUVテープ３を用い、
半導体チップ２の背面とダイシング溝1aとの交線を面取
り加工するのにUVテープ５を用い、最後に更に半導体チ
ップ２の背面をUVテープ７に貼付し、このUVテープ７か
ら半導体チップ２をチップトレイに搬送して収納するの
で、半導体チップ２から他の半導体チップの表面にカケ
2aが落下して傷，短絡等の障害の原因となるのを防止す
ることが可能となる。In this way, the UV tape 3 is used to divide the semiconductor wafer 1 by dicing and separate it into the semiconductor chips 2,
The UV tape 5 is used to chamfer the intersection line between the back surface of the semiconductor chip 2 and the dicing groove 1a. Finally, the back surface of the semiconductor chip 2 is further adhered to the UV tape 7, and the semiconductor chip 2 is removed from the UV tape 7. Since the semiconductor chip is transported and stored in the chip tray, the chip from the semiconductor chip 2 to the surface of another semiconductor chip
2a can be prevented from dropping and causing an obstacle such as a scratch or a short circuit.
以上の説明から明らかなように本発明によれば、２枚
のUVテープを用いて半導体チップの分離とカケの除去を
行い、最後に半導体チップの背面をUVテープに貼付した
状態で半導体チップをピックアップしてチップトレイに
収納するので、カケが半導体チップから他の半導体チッ
プの表面に落下するのを防止することが可能となる利点
があり、著しい経済的及び、信頼性向上の効果が期待で
きる半導体装置の製造方法の提供が可能である。As is apparent from the above description, according to the present invention, the semiconductor chip is separated and the chip is removed using two UV tapes, and finally, the semiconductor chip is attached with the back surface of the semiconductor chip attached to the UV tape. Since it is picked up and stored in the chip tray, there is an advantage that the chip can be prevented from dropping from the semiconductor chip to the surface of another semiconductor chip, and significant economical and reliability improvement effects can be expected. A method for manufacturing a semiconductor device can be provided.
第１図は本発明による一実施例を工程順に示す側断面
図、 第２図は従来の半導体装置の製造方法を工程順に示す側
断面図、 である。 図において、 １は半導体ウエーハ、1aはダイシング溝、２は半導体チ
ップ、2aはカケ、３はUVテープ、４はブレード、５はUV
テープ、６は面取りブレード、７はUVテープ、８はピッ
クアップ針、を示す。FIG. 1 is a side sectional view showing one embodiment of the present invention in the order of steps, and FIG. 2 is a side sectional view showing a conventional method of manufacturing a semiconductor device in the order of steps. In the figure, 1 is a semiconductor wafer, 1a is a dicing groove, 2 is a semiconductor chip, 2a is a chip, 3 is a UV tape, 4 is a blade, 5 is UV
The tape, 6 indicates a chamfer blade, 7 indicates a UV tape, and 8 indicates a pickup needle.
Claims (1)
（１）の背面を貼付し、前記半導体ウエーハ（１）を個
々の半導体チップ（２）に分割した後、前記半導体チッ
プ（２）及び第１のUVテープ（３）を洗浄し、前記半導
体チップ（２）の背面に貼付してある前記第１のUVテー
プ（３）に紫外線を照射した後、前記半導体チップ
（２）の表面に別の第２のUVテープ（５）を貼付する工
程と、 前記半導体チップ（２）の背面に貼付され、紫外線を照
射された前記第１のUVテープ（３）を半導体チップ
（２）の背面から剥離する工程と、 前記第２のUVテープ（５）に貼付されている前記半導体
チップ（２）の背面の縁部分を面取りブレード（６）を
用いて面取り加工する工程と、 前記半導体チップ（２）及び第２のUVテープ（５）を洗
浄し、前記半導体チップ（２）の表面に貼付されている
前記第２のUVテープ（５）に紫外線を照射した後、前記
半導体チップ（２）の背面に更に別の第３のUVテープ
（７）を貼付し、前記第２のUVテープ（５）を前記半導
体チップ（２）の表面から剥離する工程と、 を含むことを特徴とする半導体装置の製造方法。1. A semiconductor wafer (1) is affixed to a first UV tape (3) with a back surface attached thereto, and the semiconductor wafer (1) is divided into individual semiconductor chips (2). Cleaning the first UV tape (3) and irradiating the first UV tape (3) attached to the back surface of the semiconductor chip (2) with ultraviolet rays; Attaching another second UV tape (5) to the semiconductor chip (2), and attaching the first UV tape (3), which is attached to the back surface of the semiconductor chip (2) and irradiated with ultraviolet rays, to the semiconductor chip (2). A step of peeling off the back surface; a step of chamfering an edge portion of the back surface of the semiconductor chip (2) attached to the second UV tape (5) using a chamfer blade (6); (2) and the second UV tape (5) are washed, After irradiating the second UV tape (5) attached to the surface of the body chip (2) with ultraviolet rays, another third UV tape (7) is attached to the back surface of the semiconductor chip (2). And a step of peeling the second UV tape (5) from the surface of the semiconductor chip (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32695889A JP2738091B2 (en) | 1989-12-15 | 1989-12-15 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32695889A JP2738091B2 (en) | 1989-12-15 | 1989-12-15 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03187242A JPH03187242A (en) | 1991-08-15 |
| JP2738091B2 true JP2738091B2 (en) | 1998-04-08 |
Family
ID=18193684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32695889A Expired - Fee Related JP2738091B2 (en) | 1989-12-15 | 1989-12-15 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2738091B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3497722B2 (en) | 1998-02-27 | 2004-02-16 | 富士通株式会社 | Semiconductor device, method of manufacturing the same, and transfer tray thereof |
| JP2000232080A (en) * | 1999-02-10 | 2000-08-22 | Disco Abrasive Syst Ltd | Workpiece to be processed dividing system, and pellet- shifting apparatus |
| US6885522B1 (en) | 1999-05-28 | 2005-04-26 | Fujitsu Limited | Head assembly having integrated circuit chip covered by layer which prevents foreign particle generation |
-
1989
- 1989-12-15 JP JP32695889A patent/JP2738091B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03187242A (en) | 1991-08-15 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |