JP2737424B2 - Silicon wafer cleaning equipment - Google Patents

Silicon wafer cleaning equipment

Info

Publication number
JP2737424B2
JP2737424B2 JP3040404A JP4040491A JP2737424B2 JP 2737424 B2 JP2737424 B2 JP 2737424B2 JP 3040404 A JP3040404 A JP 3040404A JP 4040491 A JP4040491 A JP 4040491A JP 2737424 B2 JP2737424 B2 JP 2737424B2
Authority
JP
Japan
Prior art keywords
hydrogen peroxide
chemical
silicon wafer
solution
tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3040404A
Other languages
Japanese (ja)
Other versions
JPH04278529A (en
Inventor
康 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
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Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP3040404A priority Critical patent/JP2737424B2/en
Publication of JPH04278529A publication Critical patent/JPH04278529A/en
Application granted granted Critical
Publication of JP2737424B2 publication Critical patent/JP2737424B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は半導体集積回路装置の製
造装置において、シリコンウェハーをアンモニア,過酸
化水素水又は硫酸,過酸化水素水等の無機薬液で洗浄す
るシリコンウェハー洗浄装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for manufacturing a semiconductor integrated circuit device, and more particularly to a silicon wafer cleaning apparatus for cleaning a silicon wafer with an inorganic chemical such as ammonia, hydrogen peroxide or sulfuric acid or hydrogen peroxide.

【0002】[0002]

【従来の技術】従来、この種の半導体集積回路装置製造
用のシリコンウェハー洗浄装置は、図3の構成図に示す
ように、アンモニア,過酸化水素水又は硫酸,過酸化水
素水等の薬液の補充については、アンモニア(又は硫
酸)補充槽2および過酸化水素水補充槽3の各補充槽か
ら薬液層1への配管途中にある補充用開閉弁4が、ある
一定の時間間隔で開閉し、各薬液を一定の時間間隔であ
る一定量だけ自動補充するように制御されていた。こう
して、薬液槽1内の各薬液、たとえばアンモニア,過酸
化水素水の場合では、アンモニアと過酸化水素水の濃度
を一定に保つようにして洗浄効果の安定化を図ってい
た。
2. Description of the Related Art Conventionally, a silicon wafer cleaning apparatus of this type for manufacturing a semiconductor integrated circuit device has a chemical solution such as ammonia, hydrogen peroxide solution or sulfuric acid or hydrogen peroxide solution, as shown in FIG. Regarding the replenishment, the replenishment on-off valve 4 in the middle of the piping from each replenishment tank 2 of the ammonia (or sulfuric acid) replenishment tank 2 and the hydrogen peroxide water replenishment tank 3 to the chemical solution layer 1 opens and closes at a certain time interval, It was controlled so that each drug solution was automatically replenished by a certain amount at a certain time interval. Thus, in the case of each chemical solution in the chemical solution tank 1, for example, ammonia and hydrogen peroxide solution, the cleaning effect is stabilized by keeping the concentrations of ammonia and hydrogen peroxide solution constant.

【0003】[0003]

【発明が解決しようとする課題】上述した従来のシリコ
ンウェハ洗浄装置は、アンモニア,過酸化水素水又は硫
酸,過酸化水素水等の無機薬液の混合液を、60〜10
0℃の温度にしてシリコンウェハーを洗浄している。こ
の時、シリコンウェハー洗浄装置の薬液槽内の各薬液の
濃度は、液温を60〜100℃にすることによって経時
的に減少する方向で変化する。特にアンモニア,過酸化
水素水の場合、アンモニアの濃度が減少すると洗浄効果
が低下し、硫酸,過酸化水素水の場合も過酸化水素水の
濃度が減少するとカロ酸生成量が減少し、洗浄効果が低
下する。
In the conventional silicon wafer cleaning apparatus described above, a mixed solution of an inorganic chemical such as ammonia, hydrogen peroxide or sulfuric acid, hydrogen peroxide is used for 60 to 10 minutes.
The silicon wafer is cleaned at a temperature of 0 ° C. At this time, the concentration of each chemical solution in the chemical solution tank of the silicon wafer cleaning apparatus changes in a direction decreasing with time by setting the solution temperature to 60 to 100 ° C. In particular, in the case of ammonia and hydrogen peroxide solution, the cleaning effect decreases when the concentration of ammonia decreases, and also in the case of sulfuric acid and hydrogen peroxide solution, when the concentration of hydrogen peroxide solution decreases, the amount of generated caroic acid decreases, and the cleaning effect decreases. Decrease.

【0004】このため従来装置では、各薬液を一定時間
間隔である一定量自動補充している。しかし、この方法
では、薬液槽内の各薬液ごとの濃度が一定になるように
制御することが困難であり、自動補充の方法が最適化さ
れてない場合には、各薬液ごとの濃度の経時変化が激し
くなり、濃度のばらつきが大きくなるという問題があ
る。
For this reason, in the conventional apparatus, each chemical solution is automatically replenished by a fixed amount at a fixed time interval. However, in this method, it is difficult to control the concentration of each chemical solution in the chemical tank to be constant, and if the automatic replenishment method is not optimized, the concentration of each chemical solution over time is not improved. There is a problem that the change becomes drastic and the variation in density becomes large.

【0005】[0005]

【課題を解決するための手段】 本発明のシリコンウエ
ハー洗浄装置は、シリコンウエハーを硫酸及び過酸化水
素水等の無機薬液で洗浄するシリコンウエハー洗浄装置
において、薬液槽中の硫酸及び過酸化水素水からなる
液の濃度を連続モニターする成分分析計と、この成分分
析計からの信号に基づいて各薬液ごとに補充槽から自動
補充する補充用閉会弁とを有することを特徴とする。
た、成分分析計は、硫酸及び過酸化水素水の混合液にて
生成するカロ酸濃度をモニターしてもよい。
Means for Solving the Problems A silicon wafer cleaning apparatus of the present invention is a silicon wafer cleaning apparatus for cleaning a silicon wafer with an inorganic chemical such as sulfuric acid and hydrogen peroxide solution. Comprising a component analyzer for continuously monitoring the concentration of a drug solution comprising: and a replenishing closing valve for automatically refilling from a replenishing tank for each drug solution based on a signal from the component analyzer. I do. Ma
The component analyzer uses a mixture of sulfuric acid and hydrogen peroxide solution.
The concentration of caroic acid formed may be monitored.

【0006】[0006]

【実施例】次に本発明について図面を参照して説明す
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.

【0007】図1は本発明の実施例1の構成図である。FIG. 1 is a configuration diagram of a first embodiment of the present invention.

【0008】実施例1は、シリコンウェハー洗浄装置の
薬液層1に、アンモニアと過酸化水素水の各濃度を光学
的に計測する成分分析計5及び6が取り付けてある。分
析の際は、まず計測サンプリング用開閉弁7を開き、薬
液槽1内の薬液をポンプ8でフィルター9を介して順環
させる。これにより、薬液槽1内のアンモニア過酸化水
素水の濃度を常時連続モニターすることができ、成分分
析計5,6からの開閉指令信号10により補充用開閉弁
4を開閉させ、薬液槽1内のアンモニア又は過酸化水素
水が経時的に減少しても、ある一定量までアンモニア又
は過酸化水素水が減少した時点でアンモニア補充槽2a
および過酸化水素水補充槽3から自動補充し、常に薬液
槽内のアンモニアおよび過酸化水素水の濃度を一定に保
つことが可能となる。
In the first embodiment, component analyzers 5 and 6 for optically measuring the concentrations of ammonia and hydrogen peroxide solution are attached to the chemical liquid layer 1 of a silicon wafer cleaning apparatus. At the time of analysis, the measurement sampling on-off valve 7 is first opened, and the chemical solution in the chemical solution tank 1 is forwarded through the filter 9 by the pump 8. As a result, the concentration of the ammonia hydrogen peroxide solution in the chemical solution tank 1 can be continuously monitored, and the replenishing on-off valve 4 is opened and closed by the open / close command signal 10 from the component analyzers 5 and 6, so that the chemical solution tank 1 Even if the amount of ammonia or hydrogen peroxide decreases with time, the ammonia replenishing tank 2a is used when the amount of ammonia or hydrogen peroxide decreases to a certain amount.
In addition, automatic replenishment from the hydrogen peroxide solution replenishing tank 3 makes it possible to always keep the concentrations of ammonia and hydrogen peroxide in the chemical solution tank constant.

【0009】図2は本発明の実施例2の構成図である。
実施例2は薬液槽1ににて硫酸,過酸化水素水の混合液
にて生成するカロ酸濃度を光学的に測定する成分分析計
11が取り付けてある例を示す。モニターの方法等は実
施例1と同様である。
FIG. 2 is a configuration diagram of a second embodiment of the present invention.
Example 2 shows an example in which a chemical analyzer 11 for optically measuring the concentration of caroic acid generated in a mixed solution of sulfuric acid and hydrogen peroxide in a chemical solution tank 1 is provided. The monitoring method and the like are the same as in the first embodiment.

【0010】次に、実施例1および2の従来技術に対す
る効果を説明する。図4は実施例1と従来技術とを比較
するグラフで、同図(a)は本発明の実施例1を用いた
場合の薬液槽内のアンモニアと過酸化水素水の濃度の経
時変化を示すグラフである。また、同図(b)は従来技
術を用いた場合の薬液槽内のアンモニアと過酸化水素水
の濃度の経時変化を示すグラフである。
Next, the effects of the first and second embodiments on the prior art will be described. FIG. 4 is a graph comparing Example 1 with the prior art, and FIG. 4A shows changes over time in the concentrations of ammonia and hydrogen peroxide in the chemical solution tank when Example 1 of the present invention is used. It is a graph. FIG. 2B is a graph showing the change over time in the concentrations of ammonia and hydrogen peroxide in the chemical solution tank when the conventional technique is used.

【0011】図5は実施例2と従来技術とを比較するグ
ラフで、同図(a)は本発明の実施例2を用いた場合の
薬液槽内のカロ酸濃度の経時変化を示すグラフである。
FIG. 5 is a graph comparing Example 2 with the prior art, and FIG. 5A is a graph showing the change over time of the concentration of caroic acid in the chemical tank when Example 2 of the present invention is used. is there.

【0012】また、同図(b)は従来技術を用いた場合
の薬液槽内のカロ酸濃度の経時変化を示すグラフであ
る。
FIG. 1B is a graph showing the change over time of the concentration of caroic acid in the chemical tank when the conventional technique is used.

【0013】図4に示すように、薬液槽にアンモニア,
過酸化水素水を用いた時、アンモニアおよび過酸化水素
水の農度が各々の設定値に対し、従来はばらつきが30
%なのに対し、実施例1を用いると各々の設定値に対し
10%のばらつきにおさえることができる。また、図5
に示すように、薬液槽に硫酸,過酸化水素水を用いた
時、薬液槽内には反応物としてカロ酸ができる。このカ
ロ酸濃度は、従来技術を用いた時、設定値に対し50%
のばらつきを持つのに対し、実施例2を用いると設定値
に対し15%のばらつきに押さえることができる。
[0013] As shown in FIG.
Conventionally, when the hydrogen peroxide solution is used, the variability of the ammonia and the hydrogen peroxide solution with respect to each set value is 30%.
In contrast, when the first embodiment is used, a variation of 10% can be suppressed for each set value. FIG.
As shown in (1), when sulfuric acid and hydrogen peroxide solution are used in the chemical tank, caroic acid is formed as a reactant in the chemical tank. This caroic acid concentration is 50% of the set value when using the conventional technology.
However, when the second embodiment is used, the variation can be suppressed to 15% of the set value.

【0014】[0014]

【発明の効果】以上説明したように本発明のシリコンウ
ェハー洗浄装置は、薬液槽内の各薬液の濃度を質量比と
して連続モニターできるように、成分分析計が取り付け
てある。これにより、薬液槽の各薬液の濃度の経時変化
に応じて濃度の減少した薬液の自動補充の制御が可能に
なり、洗浄効果の安定化が図れる。
As described above, the silicon wafer cleaning apparatus of the present invention is provided with a component analyzer so that the concentration of each chemical in the chemical tank can be continuously monitored as a mass ratio. This makes it possible to control the automatic replenishment of the chemical solution whose concentration has decreased in accordance with the change over time in the concentration of each chemical solution in the chemical solution tank, thereby stabilizing the cleaning effect.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施例1の構成図である。FIG. 1 is a configuration diagram of a first embodiment of the present invention.

【図2】本発明の実施例2の構成図である。FIG. 2 is a configuration diagram of a second embodiment of the present invention.

【図3】従来の洗浄装置の構成図である。FIG. 3 is a configuration diagram of a conventional cleaning device.

【図4】実施例1と従来技術とを比較するグラフで、同
図(a)は実施例1の場合を示し、同図(b)は従来技
術の場合を示す。
FIGS. 4A and 4B are graphs for comparing the first embodiment with the prior art, in which FIG. 4A shows the case of the first embodiment and FIG. 4B shows the case of the prior art.

【図5】実施例2と従来技術とを比較するグラフで、同
図(a)は実施例2の場合を示し、同図(b)は従来技
術の場合を示す。
FIGS. 5A and 5B are graphs comparing the second embodiment and the prior art, wherein FIG. 5A shows the case of the second embodiment and FIG. 5B shows the case of the prior art.

【符号の説明】[Explanation of symbols]

1 薬液槽 2 アンモニア(又は硫酸)補充槽 2a アンモニア補充槽 2b 硫酸補充槽 3 過酸化水素水補充槽 4 補充用開閉弁 5 アンモニア成分分析計 6 過酸化水素水成分分析計 7 計測サンプリング用開閉弁 8 ポンプ 9 フィルター 10 開閉指令信号 11 カロ酸成分分析計 DESCRIPTION OF SYMBOLS 1 Chemical tank 2 Ammonia (or sulfuric acid) replenishment tank 2a Ammonia replenishment tank 2b Sulfuric acid replenishment tank 3 Hydrogen peroxide water replenishment tank 4 Replenishment on-off valve 5 Ammonia component analyzer 6 Hydrogen peroxide water component analyzer 7 Measurement sampling on-off valve Reference Signs List 8 pump 9 filter 10 opening / closing command signal 11 caroic acid component analyzer

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 シリコンウエハーを硫酸及び過酸化水素
水等の無機薬液で洗浄するシリコンウエハー洗浄装置に
おいて、薬液槽中の前記硫酸及び過酸化水素水からなる
薬液の濃度を連続モニターする成分分析計と、この成分
分析計からの信号に基づいて各薬液ごとに補充槽から自
動補充する補充用閉会弁とを有することを特徴とするシ
リコンウエハー洗浄装置。
1. A silicon wafer cleaning apparatus of the silicon wafer is washed with an inorganic chemical such as sulfuric acid and hydrogen peroxide, a continuous concentration of <br/> chemical the consisting of sulfuric acid and hydrogen peroxide solution of the chemical tank monitor And a replenishing closing valve for automatically replenishing each chemical solution from a replenishing tank based on a signal from the component analyzer.
【請求項2】 前記濃度は、前記硫酸及び前記過酸化水
素水の混合液にて生成するカロ酸濃度であることを特徴
とする請求項1記載のシリコンウエハー洗浄装置。
2. The silicon wafer cleaning apparatus according to claim 1, wherein said concentration is a concentration of caroic acid generated in a mixed solution of said sulfuric acid and said hydrogen peroxide solution.
JP3040404A 1991-03-07 1991-03-07 Silicon wafer cleaning equipment Expired - Lifetime JP2737424B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3040404A JP2737424B2 (en) 1991-03-07 1991-03-07 Silicon wafer cleaning equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3040404A JP2737424B2 (en) 1991-03-07 1991-03-07 Silicon wafer cleaning equipment

Publications (2)

Publication Number Publication Date
JPH04278529A JPH04278529A (en) 1992-10-05
JP2737424B2 true JP2737424B2 (en) 1998-04-08

Family

ID=12579730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3040404A Expired - Lifetime JP2737424B2 (en) 1991-03-07 1991-03-07 Silicon wafer cleaning equipment

Country Status (1)

Country Link
JP (1) JP2737424B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3146841B2 (en) * 1994-03-28 2001-03-19 信越半導体株式会社 Wafer rinse equipment
JP3093975B2 (en) * 1996-07-02 2000-10-03 株式会社平間理化研究所 Resist stripper management system
JP3211872B2 (en) 1997-07-29 2001-09-25 日本電気株式会社 Chemical solution treatment method, semiconductor substrate treatment method, and semiconductor device manufacturing method
US6158447A (en) * 1997-09-09 2000-12-12 Tokyo Electron Limited Cleaning method and cleaning equipment
JP3075350B2 (en) 1997-12-03 2000-08-14 日本電気株式会社 Chemical treatment method and chemical treatment device
US6241827B1 (en) 1998-02-17 2001-06-05 Tokyo Electron Limited Method for cleaning a workpiece
JP4484980B2 (en) * 1999-05-20 2010-06-16 株式会社ルネサステクノロジ Photomask cleaning method, cleaning apparatus, and photomask cleaning liquid
US6415803B1 (en) * 1999-10-06 2002-07-09 Z Cap, L.L.C. Method and apparatus for semiconductor wafer cleaning with reuse of chemicals
JP2005508079A (en) * 2001-10-08 2005-03-24 アドバンスド.テクノロジー.マテリアルス.インコーポレイテッド Real-time component monitoring and replenishment system for multi-component fluids

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH043425A (en) * 1990-04-19 1992-01-08 Hitachi Ltd Method and device for evaluating cleanliness of washing liquid

Also Published As

Publication number Publication date
JPH04278529A (en) 1992-10-05

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