JPH04278529A - Silicon wafer cleaning equipment - Google Patents
Silicon wafer cleaning equipmentInfo
- Publication number
- JPH04278529A JPH04278529A JP4040491A JP4040491A JPH04278529A JP H04278529 A JPH04278529 A JP H04278529A JP 4040491 A JP4040491 A JP 4040491A JP 4040491 A JP4040491 A JP 4040491A JP H04278529 A JPH04278529 A JP H04278529A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen peroxide
- solution
- tank
- ammonia
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 13
- 229910052710 silicon Inorganic materials 0.000 title claims description 13
- 239000010703 silicon Substances 0.000 title claims description 13
- 239000000126 substance Substances 0.000 claims abstract description 47
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 46
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 46
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 24
- 229910021529 ammonia Inorganic materials 0.000 claims description 23
- 235000012431 wafers Nutrition 0.000 claims description 12
- 239000003814 drug Substances 0.000 claims 3
- 229940079593 drug Drugs 0.000 claims 3
- 230000007423 decrease Effects 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 6
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract 8
- 239000013589 supplement Substances 0.000 abstract 2
- 239000002253 acid Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は半導体集積回路装置の製
造装置において、シリコンウェハーをアンモニア,過酸
化水素水又は硫酸,過酸化水素水等の無機薬液で洗浄す
るシリコンウェハー洗浄装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon wafer cleaning device for cleaning silicon wafers with inorganic chemicals such as ammonia, hydrogen peroxide, sulfuric acid, and hydrogen peroxide in semiconductor integrated circuit device manufacturing equipment.
【0002】0002
【従来の技術】従来、この種の半導体集積回路装置製造
用のシリコンウェハー洗浄装置は、図3の構成図に示す
ように、アンモニア,過酸化水素水又は硫酸,過酸化水
素水等の薬液の補充については、アンモニア(又は硫酸
)補充槽2および過酸化水素水補充槽3の各補充槽から
薬液層1への配管途中にある補充用開閉弁4が、ある一
定の時間間隔で開閉し、各薬液を一定の時間間隔である
一定量だけ自動補充するように制御されていた。こうし
て、薬液槽1内の各薬液、たとえばアンモニア,過酸化
水素水の場合では、アンモニアと過酸化水素水の濃度を
一定に保つようにして洗浄効果の安定化を図っていた。[Prior Art] Conventionally, this type of silicon wafer cleaning equipment for manufacturing semiconductor integrated circuit devices uses chemical solutions such as ammonia, hydrogen peroxide, sulfuric acid, and hydrogen peroxide, as shown in the block diagram of FIG. Regarding replenishment, a replenishment on-off valve 4 located in the middle of the piping from each replenishment tank, an ammonia (or sulfuric acid) replenishment tank 2 and a hydrogen peroxide solution replenishment tank 3, to the chemical layer 1 opens and closes at a certain time interval, It was controlled to automatically replenish a certain amount of each chemical solution at certain time intervals. In this way, in the case of each chemical solution in the chemical solution tank 1, for example, ammonia and hydrogen peroxide solution, the cleaning effect is stabilized by keeping the concentrations of ammonia and hydrogen peroxide solution constant.
【0003】0003
【発明が解決しようとする課題】上述した従来のシリコ
ンウェハ洗浄装置は、アンモニア,過酸化水素水又は硫
酸,過酸化水素水等の無機薬液の混合液を、60〜10
0℃の温度にしてシリコンウェハーを洗浄している。こ
の時、シリコンウェハー洗浄装置の薬液槽内の各薬液の
濃度は、液温を60〜100℃にすることによって経時
的に減少する方向で変化する。特にアンモニア,過酸化
水素水の場合、アンモニアの濃度が減少すると洗浄効果
が低下し、硫酸,過酸化水素水の場合も過酸化水素水の
濃度が減少するとカロ酸生成量が減少し、洗浄効果が低
下する。[Problems to be Solved by the Invention] The conventional silicon wafer cleaning apparatus described above uses a mixture of inorganic chemicals such as ammonia, hydrogen peroxide, sulfuric acid, and hydrogen peroxide at 60 to 10
Silicon wafers are cleaned at a temperature of 0°C. At this time, the concentration of each chemical solution in the chemical solution tank of the silicon wafer cleaning apparatus changes in the direction of decreasing over time by setting the solution temperature to 60 to 100°C. Especially in the case of ammonia and hydrogen peroxide, when the concentration of ammonia decreases, the cleaning effect decreases, and in the case of sulfuric acid and hydrogen peroxide, when the concentration of hydrogen peroxide decreases, the amount of caroic acid produced decreases, and the cleaning effect decreases. decreases.
【0004】このため従来装置では、各薬液を一定時間
間隔である一定量自動補充している。しかし、この方法
では、薬液槽内の各薬液ごとの濃度が一定になるように
制御することが困難であり、自動補充の方法が最適化さ
れてない場合には、各薬液ごとの濃度の経時変化が激し
くなり、濃度のばらつきが大きくなるという問題がある
。[0004] For this reason, in conventional devices, each chemical solution is automatically replenished in a fixed amount at fixed time intervals. However, with this method, it is difficult to control the concentration of each chemical solution in the chemical tank to be constant, and if the automatic replenishment method is not optimized, the concentration of each chemical solution over time may vary. There is a problem in that changes become more rapid and variations in concentration become larger.
【0005】[0005]
【課題を解決するための手段】本発明のシリコンウェハ
ー洗浄装置は、アンモニア,過酸化水素水又は硫酸,過
酸化水素水等の無機薬液の濃度を各薬液ごとに計測する
成分分析計を取りつけ、薬液槽内に混合された各々の薬
液の濃度を連続モニターすることを可能にしている。そ
して、成分分析計からの信号に基づいて補充用開閉弁を
制御し、薬液槽内の各々の薬液の濃度が、新液投入直後
より経時的に減少しても、濃度がある一定値まで減少し
た時に、濃度の減少した薬液について自動補充できるよ
うにしている。[Means for Solving the Problems] The silicon wafer cleaning apparatus of the present invention is equipped with a component analyzer that measures the concentration of each inorganic chemical solution such as ammonia, hydrogen peroxide solution, sulfuric acid, hydrogen peroxide solution, etc. This makes it possible to continuously monitor the concentration of each chemical solution mixed in the chemical solution tank. Then, the replenishment on-off valve is controlled based on the signal from the component analyzer, and even if the concentration of each chemical solution in the chemical tank decreases over time from immediately after the new solution is added, the concentration will decrease to a certain value. When the concentration of the chemical solution decreases, it can be automatically refilled.
【0006】[0006]
【実施例】次に本発明について図面を参照して説明する
。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.
【0007】図1は本発明の実施例1の構成図である。FIG. 1 is a block diagram of a first embodiment of the present invention.
【0008】実施例1は、シリコンウェハー洗浄装置の
薬液層1に、アンモニアと過酸化水素水の各濃度を光学
的に計測する成分分析計5及び6が取り付けてある。分
析の際は、まず計測サンプリング用開閉弁7を開き、薬
液槽1内の薬液をポンプ8でフィルター9を介して順環
させる。これにより、薬液槽1内のアンモニア過酸化水
素水の濃度を常時連続モニターすることができ、成分分
析計5,6からの開閉指令信号10により補充用開閉弁
4を開閉させ、薬液槽1内のアンモニア又は過酸化水素
水が経時的に減少しても、ある一定量までアンモニア又
は過酸化水素水が減少した時点でアンモニア補充槽2a
および過酸化水素水補充槽3から自動補充し、常に薬液
槽内のアンモニアおよび過酸化水素水の濃度を一定に保
つことが可能となる。In the first embodiment, component analyzers 5 and 6 for optically measuring the concentrations of ammonia and hydrogen peroxide are attached to the chemical layer 1 of the silicon wafer cleaning apparatus. During analysis, first, the measurement sampling on-off valve 7 is opened, and the chemical solution in the chemical solution tank 1 is circulated through the filter 9 by the pump 8. As a result, the concentration of ammonia hydrogen peroxide solution in the chemical tank 1 can be continuously monitored at all times, and the replenishment on-off valve 4 is opened and closed by the opening/closing command signal 10 from the component analyzers 5 and 6. Even if the ammonia or hydrogen peroxide solution decreases over time, when the ammonia or hydrogen peroxide solution decreases to a certain amount, the ammonia replenishment tank 2a
By automatically replenishing the hydrogen peroxide solution from the hydrogen peroxide solution replenishment tank 3, it is possible to always keep the concentrations of ammonia and hydrogen peroxide solution constant in the chemical solution tank.
【0009】図2は本発明の実施例2の構成図である。
実施例2は薬液槽1ににて硫酸,過酸化水素水の混合液
にて生成するカロ酸濃度を光学的に測定する成分分析計
11が取り付けてある例を示す。モニターの方法等は実
施例1と同様である。FIG. 2 is a block diagram of a second embodiment of the present invention. Embodiment 2 shows an example in which a component analyzer 11 is installed in the chemical tank 1 to optically measure the concentration of caroic acid produced in a mixture of sulfuric acid and hydrogen peroxide. The monitoring method and the like are the same as in Example 1.
【0010】次に、実施例1および2の従来技術に対す
る効果を説明する。図4は実施例1と従来技術とを比較
するグラフで、同図(a)は本発明の実施例1を用いた
場合の薬液槽内のアンモニアと過酸化水素水の濃度の経
時変化を示すグラフである。また、同図(b)は従来技
術を用いた場合の薬液槽内のアンモニアと過酸化水素水
の濃度の経時変化を示すグラフである。Next, the effects of Examples 1 and 2 over the prior art will be explained. FIG. 4 is a graph comparing Example 1 and the conventional technology, and FIG. 4 (a) shows the change over time in the concentration of ammonia and hydrogen peroxide in the chemical tank when Example 1 of the present invention is used. It is a graph. Further, FIG. 2B is a graph showing changes over time in the concentrations of ammonia and hydrogen peroxide in the chemical tank when the conventional technique is used.
【0011】図5は実施例2と従来技術とを比較するグ
ラフで、同図(a)は本発明の実施例2を用いた場合の
薬液槽内のカロ酸濃度の経時変化を示すグラフである。FIG. 5 is a graph comparing Example 2 with the prior art, and FIG. be.
【0012】また、同図(b)は従来技術を用いた場合
の薬液槽内のカロ酸濃度の経時変化を示すグラフである
。[0012] FIG. 2B is a graph showing the change over time in the caroic acid concentration in the chemical tank when the conventional technique is used.
【0013】図4に示すように、薬液槽にアンモニア,
過酸化水素水を用いた時、アンモニアおよび過酸化水素
水の農度が各々の設定値に対し、従来はばらつきが30
%なのに対し、実施例1を用いると各々の設定値に対し
10%のばらつきにおさえることができる。また、図5
に示すように、薬液槽に硫酸,過酸化水素水を用いた時
、薬液槽内には反応物としてカロ酸ができる。このカロ
酸濃度は、従来技術を用いた時、設定値に対し50%の
ばらつきを持つのに対し、実施例2を用いると設定値に
対し15%のばらつきに押さえることができる。As shown in FIG. 4, ammonia,
When using hydrogen peroxide solution, the agricultural degree of ammonia and hydrogen peroxide solution used to vary by 30% compared to each set value.
%, whereas when Example 1 is used, the variation can be suppressed to 10% for each set value. Also, Figure 5
As shown in , when sulfuric acid and hydrogen peroxide are used in the chemical tank, caroic acid is produced as a reactant in the chemical tank. When the conventional technique is used, the Caroic acid concentration has a variation of 50% with respect to the set value, but when Example 2 is used, the variation with respect to the set value can be suppressed to 15%.
【0014】[0014]
【発明の効果】以上説明したように本発明のシリコンウ
ェハー洗浄装置は、薬液槽内の各薬液の濃度を質量比と
して連続モニターできるように、成分分析計が取り付け
てある。これにより、薬液槽の各薬液の濃度の経時変化
に応じて濃度の減少した薬液の自動補充の制御が可能に
なり、洗浄効果の安定化が図れる。As described above, the silicon wafer cleaning apparatus of the present invention is equipped with a component analyzer so that the concentration of each chemical in the chemical tank can be continuously monitored as a mass ratio. This makes it possible to control automatic replenishment of a chemical solution whose concentration has decreased in accordance with changes in the concentration of each chemical solution in the chemical tank over time, thereby stabilizing the cleaning effect.
【図1】本発明の実施例1の構成図である。FIG. 1 is a configuration diagram of a first embodiment of the present invention.
【図2】本発明の実施例2の構成図である。FIG. 2 is a configuration diagram of a second embodiment of the present invention.
【図3】従来の洗浄装置の構成図である。FIG. 3 is a configuration diagram of a conventional cleaning device.
【図4】実施例1と従来技術とを比較するグラフで、同
図(a)は実施例1の場合を示し、同図(b)は従来技
術の場合を示す。FIG. 4 is a graph comparing Example 1 and the prior art; FIG. 4(a) shows the case of Example 1, and FIG. 4(b) shows the case of the prior art.
【図5】実施例2と従来技術とを比較するグラフで、同
図(a)は実施例2の場合を示し、同図(b)は従来技
術の場合を示す。FIG. 5 is a graph comparing Example 2 and the prior art; FIG. 5(a) shows the case of Example 2, and FIG. 5(b) shows the case of the prior art.
1 薬液槽
2 アンモニア(又は硫酸)補充槽2a
アンモニア補充槽
2b 硫酸補充槽
3 過酸化水素水補充槽
4 補充用開閉弁
5 アンモニア成分分析計
6 過酸化水素水成分分析計
7 計測サンプリング用開閉弁
8 ポンプ
9 フィルター
10 開閉指令信号
11 カロ酸成分分析計1 Chemical solution tank 2 Ammonia (or sulfuric acid) replenishment tank 2a
Ammonia replenishment tank 2b Sulfuric acid replenishment tank 3 Hydrogen peroxide replenishment tank 4 Replenishment on-off valve 5 Ammonia component analyzer 6 Hydrogen peroxide water component analyzer 7 Measurement sampling on-off valve 8 Pump 9 Filter 10 Opening/closing command signal 11 Caroic acid component analyzer
Claims (1)
化水素水又は硫酸,過酸化水素水等の無機薬液で洗浄す
るシリコンウェハー洗浄装置において、アンモニア,過
酸化水素水又は硫酸,過酸化水素水など薬液槽中で混合
された薬液の濃度を各薬液ごとに質量比として連続モニ
ターする成分分析計と、この成分分析計からの信号に基
づいて、各薬液の質量比の経時変化に応じて適量の薬液
を各薬液ごとに補充槽から自動補充する補充用開閉弁と
を有することを特徴とするシリコンウェハー洗浄装置。Claim 1: In a silicon wafer cleaning apparatus for cleaning silicon wafers with an inorganic chemical solution such as ammonia, hydrogen peroxide solution, sulfuric acid, hydrogen peroxide solution, etc., a chemical solution tank such as ammonia, hydrogen peroxide solution, sulfuric acid, hydrogen peroxide solution, etc. A component analyzer continuously monitors the concentration of the mixed chemical solution as a mass ratio for each drug solution, and based on the signal from this component analyzer, the appropriate amount of drug solution is dispensed according to the change in the mass ratio of each drug solution over time. A silicon wafer cleaning device characterized by having a replenishment on-off valve that automatically replenishes each chemical solution from a replenishment tank.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3040404A JP2737424B2 (en) | 1991-03-07 | 1991-03-07 | Silicon wafer cleaning equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3040404A JP2737424B2 (en) | 1991-03-07 | 1991-03-07 | Silicon wafer cleaning equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04278529A true JPH04278529A (en) | 1992-10-05 |
JP2737424B2 JP2737424B2 (en) | 1998-04-08 |
Family
ID=12579730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3040404A Expired - Lifetime JP2737424B2 (en) | 1991-03-07 | 1991-03-07 | Silicon wafer cleaning equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2737424B2 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5881748A (en) * | 1994-03-28 | 1999-03-16 | Shin-Etsu Handotai Co. Ltd. | Apparatus for rinsing wafers adhered with chemical liquid by use of purified water |
US5896874A (en) * | 1996-07-02 | 1999-04-27 | Hirama Rika Kenkyujo Ltd. | Apparatus for controlling resist stripping solution |
US6158447A (en) * | 1997-09-09 | 2000-12-12 | Tokyo Electron Limited | Cleaning method and cleaning equipment |
US6171975B1 (en) | 1997-07-29 | 2001-01-09 | Nec Corporation | Wet-chemical treatment method, treatment method of semiconductor substrate, and manufacturing method of semiconductor device |
US6209553B1 (en) * | 1999-05-20 | 2001-04-03 | Mitsubishidenki Kabushiki Kaisha | Method of and apparatus for washing photomask and washing solution for photomask |
US6241827B1 (en) | 1998-02-17 | 2001-06-05 | Tokyo Electron Limited | Method for cleaning a workpiece |
US6286526B1 (en) | 1997-12-03 | 2001-09-11 | Nec Corporation | Method for treatment of semiconductor substrate with chemical solution and apparatus used for said treatment |
US6415803B1 (en) * | 1999-10-06 | 2002-07-09 | Z Cap, L.L.C. | Method and apparatus for semiconductor wafer cleaning with reuse of chemicals |
EP1451413A2 (en) * | 2001-10-08 | 2004-09-01 | Advanced Technology Materials, Inc. | Real-time component monitoring and replenishment system for multicomponent fluids |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH043425A (en) * | 1990-04-19 | 1992-01-08 | Hitachi Ltd | Method and device for evaluating cleanliness of washing liquid |
-
1991
- 1991-03-07 JP JP3040404A patent/JP2737424B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH043425A (en) * | 1990-04-19 | 1992-01-08 | Hitachi Ltd | Method and device for evaluating cleanliness of washing liquid |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5881748A (en) * | 1994-03-28 | 1999-03-16 | Shin-Etsu Handotai Co. Ltd. | Apparatus for rinsing wafers adhered with chemical liquid by use of purified water |
US5896874A (en) * | 1996-07-02 | 1999-04-27 | Hirama Rika Kenkyujo Ltd. | Apparatus for controlling resist stripping solution |
US6171975B1 (en) | 1997-07-29 | 2001-01-09 | Nec Corporation | Wet-chemical treatment method, treatment method of semiconductor substrate, and manufacturing method of semiconductor device |
US6158447A (en) * | 1997-09-09 | 2000-12-12 | Tokyo Electron Limited | Cleaning method and cleaning equipment |
US6286526B1 (en) | 1997-12-03 | 2001-09-11 | Nec Corporation | Method for treatment of semiconductor substrate with chemical solution and apparatus used for said treatment |
US6241827B1 (en) | 1998-02-17 | 2001-06-05 | Tokyo Electron Limited | Method for cleaning a workpiece |
US6357458B2 (en) | 1998-02-17 | 2002-03-19 | Tokyo Electron Limited | Cleaning apparatus and cleaning method |
US6209553B1 (en) * | 1999-05-20 | 2001-04-03 | Mitsubishidenki Kabushiki Kaisha | Method of and apparatus for washing photomask and washing solution for photomask |
US7077915B2 (en) | 1999-05-20 | 2006-07-18 | Renesas Technology Corp. | Method of and apparatus for washing photomask and washing solution for photomask |
US6415803B1 (en) * | 1999-10-06 | 2002-07-09 | Z Cap, L.L.C. | Method and apparatus for semiconductor wafer cleaning with reuse of chemicals |
EP1451413A2 (en) * | 2001-10-08 | 2004-09-01 | Advanced Technology Materials, Inc. | Real-time component monitoring and replenishment system for multicomponent fluids |
US7214537B2 (en) | 2001-10-08 | 2007-05-08 | Advanced Technology Materials, Inc. | Real-time component monitoring and replenishment system for multicomponent fluids |
EP1451413A4 (en) * | 2001-10-08 | 2007-12-26 | Advanced Tech Materials | Real-time component monitoring and replenishment system for multicomponent fluids |
Also Published As
Publication number | Publication date |
---|---|
JP2737424B2 (en) | 1998-04-08 |
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