JP2734625B2 - Method for manufacturing multilayer wiring board - Google Patents

Method for manufacturing multilayer wiring board

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Publication number
JP2734625B2
JP2734625B2 JP1106148A JP10614889A JP2734625B2 JP 2734625 B2 JP2734625 B2 JP 2734625B2 JP 1106148 A JP1106148 A JP 1106148A JP 10614889 A JP10614889 A JP 10614889A JP 2734625 B2 JP2734625 B2 JP 2734625B2
Authority
JP
Japan
Prior art keywords
layer
substrate
conductor pattern
insulating layer
wiring board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1106148A
Other languages
Japanese (ja)
Other versions
JPH02305494A (en
Inventor
浩司 南
武司 加納
徹 樋口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP1106148A priority Critical patent/JP2734625B2/en
Publication of JPH02305494A publication Critical patent/JPH02305494A/en
Application granted granted Critical
Publication of JP2734625B2 publication Critical patent/JP2734625B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体素子搭載用の多層配線基板の製造
方法に関する。特に、内層導体パターンの一部が露出
し、スルホールを有する半導体素子搭載用の多層配線基
板の製造方法に関する。
Description: TECHNICAL FIELD The present invention relates to a method for manufacturing a multilayer wiring board for mounting a semiconductor element. In particular, the present invention relates to a method for manufacturing a multilayer wiring board for mounting a semiconductor element having a through hole in which a part of an inner conductor pattern is exposed.

〔従来の技術〕[Conventional technology]

近年、半導体素子の高密度化、多機能化に伴い半導体
装置の外部接続用の端子数は著しく増加してきている。
この対応の一つとして多層配線基板のチップキャリアが
使われてきている。この場合、半導体素子と金線で接続
する多層配線基板の導体パターンには金線との接合強
度、電気特性の信頼性上、金や銀を含むめっき層が形成
されている必要がある。従来は、露出する導体パターン
を配設した内層基板で構成された多層基板の外層基板の
導体層を回路形成する時には、露出する導体パターンが
侵されないように一時保護処理し、その後全ての導体パ
ターンを一度に金めっきしているが、露出する導体パタ
ーンが侵されないような一時保護処理と言う面倒な工程
が必要となっていた。さらに、上記半導体素子の一層の
進展によりチップキャリアとなる多層配線基板の表面の
導体パターンは益々複雑になるために、多層配線基板に
配設された個々の導体パターンを多層配線基板を構成す
る絶縁層の端部まで延設して電気めっき用の外部接続端
子とすることができないと言う問題があった。この対応
として絶縁層の一方の表面に配設された導体パターンを
他方の表面に配設された導体パターンにスルホールの導
電路を介して接続することにより、一つの導体パターン
を絶縁層の端部まで延設して電気めっきのための外部接
続端子にすることが行われていた。しかし、前記多層配
線基板において、かかるスルホールがそのまま存在する
と、スルホールのために導体パターンとの絶縁距離が短
くなりリーク電流が流れやすくなったり、導体パターン
がスルホールの導電路と言う余分な回路に接続されるこ
とにより回路抵抗が大きくなったり、さらに、多層配線
基板をマザーボードに実装する時に半田がスルホールを
埋めながら上昇しマザーボードと反対側の多層配線基板
表面に飛散し導体パターンを傷つけるなどの問題があっ
た。
2. Description of the Related Art In recent years, the number of terminals for external connection of a semiconductor device has significantly increased with the increase in the density and the number of functions of semiconductor elements.
As one of the measures, a chip carrier of a multilayer wiring board has been used. In this case, it is necessary to form a plating layer containing gold or silver on the conductor pattern of the multilayer wiring board connected to the semiconductor element by the gold wire from the viewpoint of bonding strength with the gold wire and reliability of electric characteristics. Conventionally, when forming a circuit on a conductor layer of an outer layer substrate of a multilayer substrate composed of an inner layer substrate on which an exposed conductor pattern is disposed, a temporary protection process is performed so that the exposed conductor pattern is not damaged, and then all conductor patterns are formed. At a time, but a troublesome process called a temporary protection process for preventing the exposed conductor pattern from being attacked was required. Furthermore, since the conductor pattern on the surface of the multilayer wiring board which becomes a chip carrier becomes more and more complicated due to the further development of the semiconductor element, the individual conductor patterns provided on the multilayer wiring board are insulated to form the multilayer wiring board. There is a problem that it cannot be extended to the end of the layer and used as an external connection terminal for electroplating. As a countermeasure, a conductor pattern provided on one surface of the insulating layer is connected to a conductor pattern provided on the other surface via a through-hole conductive path, thereby connecting one conductor pattern to the end of the insulating layer. They have been extended to external connection terminals for electroplating. However, in the multilayer wiring board, if such a through-hole is present as it is, the through-hole shortens the insulation distance from the conductor pattern, making it easier for leakage current to flow, or connecting the conductor pattern to an extra circuit called a conductive path of the through-hole. This causes problems such as increased circuit resistance, and when mounting the multilayer wiring board on the motherboard, the solder rises while filling the through holes and scatters on the surface of the multilayer wiring board opposite to the motherboard, damaging the conductor pattern. there were.

〔発明が解決しょうとする課題〕[Problems to be solved by the invention]

内層基板の露出する導体パターンを一時保護処理し、
用済み後除去と言う面倒な工程を省工程し、内層導体パ
ターンにめっき層を形成するのに使ったスルホールによ
って、導体パターンとの絶縁性が低下することや導体パ
ターンの回路抵抗が増加すること、さらに、半田がスル
ホールを上昇して多層配線基板を傷付けることなどのな
い多層配線基板の製造方法を提供することにある。
Temporarily protect the exposed conductor pattern of the inner layer substrate,
The through hole used to form the plating layer on the inner conductor pattern reduces the insulating property with the conductor pattern and increases the circuit resistance of the conductor pattern by eliminating the troublesome process of removing after use. It is still another object of the present invention to provide a method for manufacturing a multilayer wiring board in which solder does not raise through holes and damage the multilayer wiring board.

〔課題を解決するための手段〕[Means for solving the problem]

本発明は、前記課題を解決するために、第1の絶縁層
とこの第1の絶縁層に形成された導体パターン層とこの
導体パターン層から第1の絶縁層に到る凹部とこの導体
パターンに形成された金めっきを含むめっき層を有する
内層基板において、該内層基板のめっき層を、内層基板
に形成したスルホールの導電路で絶縁層両面の導体パタ
ーン接続し、半導体素子搭載用の凹部が形成されたのと
反対側の導体パターンを端部に延設して外部端子として
形成し、第2の絶縁層とこの第2の絶縁層に形成された
導体層と第2の絶縁層から導体層に連通する開口を有
し、かつこの開口は上記凹部よりも開口面が大きな外層
基板を前記凹部が開口内に位置し、前記導体パターンと
第2の絶縁層とを重ね合わせて被圧体とし、この被圧体
を熱圧成形し、得られた多層配線基板の外層基板の導体
層に導体パターンを形成することを特徴とする多層配線
基板の製造方法。」と「請求項1の外層基板の導体層に
導体パターンを形成するときに、前記内層基板に形成し
たスルホールにこのスルホールの径よりも大きなスルホ
ールを形成、導電路とし、第1、第2の絶縁層の導体パ
ターンと接続し、半導体素子搭載用の凹部が形成された
との反対側の導体パターンを端部に延設して外部端子と
して金めっきを含むめっき層を形成することを特徴とす
る請求項1記載の多層配線基板の製造方法。」とを要旨
としている。
In order to solve the above-mentioned problems, the present invention provides a first insulating layer, a conductive pattern layer formed on the first insulating layer, a concave portion extending from the conductive pattern layer to the first insulating layer, and a conductive pattern formed on the first insulating layer. In the inner layer substrate having a plating layer including gold plating formed on the inner layer substrate, the plating layer of the inner layer substrate is connected to conductor patterns on both sides of the insulating layer by conductive paths of through holes formed in the inner layer substrate, and a recess for mounting a semiconductor element is formed. A conductor pattern on the opposite side to the one formed is extended to the end to form an external terminal, and a second insulating layer, a conductor layer formed on the second insulating layer, and a conductor formed from the second insulating layer An outer layer substrate having an opening communicating with the layer and having an opening surface larger than the recess, wherein the recess is located in the opening, and the conductor pattern and the second insulating layer are overlapped with each other to form a pressure-receiving body. Then, this pressed body is hot-pressed and obtained. Method for manufacturing a multilayer wiring board, which comprises forming a conductor pattern on the conductive layer of the outer layer board having a multilayer wiring board. When forming a conductor pattern on the conductor layer of the outer substrate according to claim 1, a through hole larger than the diameter of the through hole is formed in the through hole formed in the inner substrate, and the first and second through holes are formed as conductive paths. It is connected to the conductor pattern of the insulating layer, and the conductor pattern on the opposite side to the side where the concave portion for mounting the semiconductor element is formed is extended to the end to form a plating layer containing gold plating as an external terminal. A method for manufacturing a multilayer wiring board according to claim 1. "

〔実施例〕〔Example〕

以下図面に基づいて詳しく説明する。第1図、は本発
明で製造された多層配線基板の斜視図で、第2図(g)
はその断面図である。
The details will be described below with reference to the drawings. FIG. 1 is a perspective view of a multilayer wiring board manufactured by the present invention, and FIG. 2 (g).
Is a sectional view thereof.

第2図(c)の内層基板は次のようにして得られる。
第2図(a)に示すように、両面に銅箔の導体層2を配
設した第1の絶縁層1の基板に、第2図(b)に示すよ
うに、導体層2から第1の絶縁層に到る半導体素子搭載
用の凹部3を座ぐり加工で形成し、凹部3以外の箇所に
導体層2から第1の絶縁層1に連通するスルホール4、
4、…をドリル加工でそれぞれ設ける。そして全体を無
電解銅めっきし、スルホール4、4、…に導電路5を形
成し、さらに、第2図(a)に示した導体層2をエッチ
ングして内層導体パターン6と導体パターン7を形成す
る。この回路形成により、半導体素子搭載用の凹部3が
形成された第1の絶縁層1の表面の内層導体パターン6
はスルホール4に形成された導電路5を介して半導体素
子搭載用の凹部3と反対側の絶縁層1の表面の端部まで
延設して外部接続端子の役割を果たす導体パターン7に
導通する。この外部接続端子を使って、前記2つの内層
導体パターン6と導体パターン7に電気めっきによりニ
ッケルと金めっきのめっき層16を設け第2図(c)の内
層基板8を構成する。なお、めっき層16の形成には種々
の金属の電気めっきが適用できる。すなわち、上記の電
気めっきとしては金、銀、ニッケル、半田等が好ましく
単独でも組合せでもよい。加工性、耐久性の点ではニッ
ケルと金の組合せが最適である。
The inner substrate of FIG. 2 (c) is obtained as follows.
As shown in FIG. 2 (a), the substrate of the first insulating layer 1 having the copper foil conductor layers 2 disposed on both sides thereof is placed on the first insulating layer 1 as shown in FIG. 2 (b). A concave portion 3 for mounting a semiconductor element reaching the insulating layer is formed by spot facing, and a through hole 4 communicating with the first insulating layer 1 from the conductor layer 2 to a portion other than the concave portion 3;
4,... Are provided by drilling. Then, the whole is subjected to electroless copper plating to form conductive paths 5 in the through holes 4, 4,..., And further, the conductive layer 2 shown in FIG. Form. By this circuit formation, the inner conductor pattern 6 on the surface of the first insulating layer 1 in which the recess 3 for mounting the semiconductor element is formed.
Extends to the end of the surface of the insulating layer 1 opposite to the recess 3 for mounting the semiconductor element through the conductive path 5 formed in the through hole 4 and is electrically connected to the conductor pattern 7 serving as an external connection terminal. . Using the external connection terminals, a plating layer 16 of nickel and gold plating is provided on the two inner conductor patterns 6 and 7 by electroplating to form the inner substrate 8 of FIG. 2 (c). In addition, the electroplating of various metals can be applied to the formation of the plating layer 16. That is, gold, silver, nickel, solder, and the like are preferable as the electroplating, and may be used alone or in combination. The combination of nickel and gold is optimal in terms of workability and durability.

一方、外層基板は次のようにしてえられる。第2図
(d)に示すように、片面に銅箔の導体層2を他面にプ
リプレグから作られる接着層11を配設した第2の絶縁層
10を有する基板に、導体層2から第2の絶縁層10を通り
接着層11に連通する半導体素子搭載のために四角形の開
口12を設けて外層基板9を構成する。なお、第2の絶縁
層10の他面に配設された接着層11は、第2の絶縁層10と
一体となっている必要はなく前記内層基板8と外層基板
9とを積層一体化する時にこれらの間に開口12を持つ接
着フィルム、接着シート、プリプレグなどを外層基板9
の開口12同士を一致させて組み込まれても良い。また、
この開口12の形状は四角形に限るものではなく円形など
でも良く特に限定するものではない。さらに、この開口
12は内層基板8の凹部3よりも大でなければならない。
その理由は第2図(e)に示すように、前記外層基板9
を前記内層基板8に積層一体化した場合、内層基板8に
形成された凹部3の周辺の内層導体パターン6は開口12
内に露出しないと搭載する半導体素子を接続する端子を
とることができないからである。
On the other hand, the outer layer substrate is obtained as follows. As shown in FIG. 2 (d), a second insulating layer provided with a copper foil conductor layer 2 on one side and an adhesive layer 11 made of prepreg on the other side.
An outer layer substrate 9 is formed by providing a rectangular opening 12 for mounting a semiconductor element from the conductor layer 2 through the second insulating layer 10 and communicating with the adhesive layer 11 in the substrate having 10. Note that the adhesive layer 11 provided on the other surface of the second insulating layer 10 does not need to be integrated with the second insulating layer 10, and the inner substrate 8 and the outer substrate 9 are laminated and integrated. Sometimes, an adhesive film, an adhesive sheet, a prepreg or the like having an opening 12 between them is attached to the outer substrate 9.
The openings 12 may be integrated with each other. Also,
The shape of the opening 12 is not limited to a square, but may be a circle or the like, and is not particularly limited. In addition, this opening
12 must be larger than the recess 3 of the inner layer substrate 8.
The reason is that, as shown in FIG.
Is laminated and integrated with the inner layer substrate 8, the inner layer conductor pattern 6 around the concave portion 3 formed in the inner layer substrate 8 has an opening 12.
This is because if it is not exposed to the inside, a terminal for connecting the mounted semiconductor element cannot be obtained.

第2図(e)は前記外層基板9の接着層と前記内層基
板8の半導体素子搭載用の凹部3が形成された側の内層
導体パターン層6とを重ね合わせ、前記内層基板の凹部
3が前記外層基板9の開口12内に位置して重ね合わせた
被圧体である。なお、外層基板9が接着層11を持たない
場合は、内層基板8との間に開口12を持つ接着フィル
ム、接着シート、プリプレグなどのなかから適宜選択し
て外層基板9の開口12同士を一致させ組み込み、これら
を重ね合わせて被圧体を形成する。
FIG. 2 (e) shows that the adhesive layer of the outer layer substrate 9 and the inner layer conductor pattern layer 6 of the inner layer substrate 8 on the side where the recess 3 for mounting the semiconductor element is formed are overlapped. It is a pressure-receiving body that is positioned within the opening 12 of the outer layer substrate 9 and overlapped. When the outer layer substrate 9 does not have the adhesive layer 11, the openings 12 of the outer layer substrate 9 coincide with each other by appropriately selecting from an adhesive film, an adhesive sheet, a prepreg having an opening 12 with the inner layer substrate 8, and the like. Then, these are superposed to form a pressure-receiving body.

第2図(f)は、この被圧体を加熱加圧して積層一体
化した後、前記スルホール4の位置にスルホール4の径
より大きな径のスルホール13を前記内層基板8の導体パ
ターン7から外層基板9の導体層2に到達して形成した
ものである。
FIG. 2 (f) shows that after the pressure-receiving body is heated and pressurized and laminated and integrated, a through hole 13 having a diameter larger than the diameter of the through hole 4 is formed at the position of the through hole 4 from the conductor pattern 7 of the inner layer substrate 8 to the outer layer. It is formed to reach the conductor layer 2 of the substrate 9.

第2図(g)は、その後、全体を無電解銅めっきし、
外層基板9の導体層2をエッチングして導体パターン14
を形成し、外層基板9のこの導体パターン14と前記内層
基板8のめっき層で保護された前記内層導体パターン6
とを前記端子ピン挿入用のスルホール13に形成された導
電路15を介して多層配線基板の半導体素子搭載用の凹部
3と反対側に配設され端部まで延設され外部端子の役割
を果たす導体パターン7に接続し、この外部端子を使っ
て電気めっきによりニッケルと金めっきのめっき層16を
内層導体パターン6、導体パターン7そして14に形成し
て半導体チップキャリアとして用いられる半導体素子搭
載用の多層配線基板としたものである。
FIG. 2 (g) shows the subsequent electroless copper plating,
The conductor layer 2 of the outer layer substrate 9 is etched to form a conductor pattern 14.
Is formed, and the conductor pattern 14 of the outer substrate 9 and the inner conductor pattern 6 protected by the plating layer of the inner substrate 8 are formed.
Are disposed on the side opposite to the recess 3 for mounting the semiconductor element of the multilayer wiring board through the conductive path 15 formed in the through hole 13 for inserting the terminal pin, and are extended to the end to serve as external terminals. The external terminal is connected to the conductor pattern 7, and a plating layer 16 of nickel and gold plating is formed on the inner layer conductor pattern 6, the conductor patterns 7 and 14 by electroplating using the external terminals to mount a semiconductor element used as a semiconductor chip carrier. This is a multilayer wiring board.

かかる構造において、半導体素子搭載用の開口12内に
露出する内層導体パターン6は前記の如くニッケル、さ
らに金めっきの如くめっき層で覆われているために、特
にレジストやマスキング材の塗布をすることなく外層基
板の導体層2に常法のサブトラクティブ法で導体パター
ンが形成できる。また、スルホール13に形成した導電路
15に接続する内層導体パターン6、外層基板9の表面の
導体パターン14、内層基板8の半導体素子搭載用の凹部
3と反対側に形成された導体パターン7において、導体
パターン7または、導体パターン14のいずれかが多層配
線基板の端部まで延設して外部端子の役割を果たせば良
く、特に導通経路について限定するものではない。さら
に、スルホール13に端子ピン(図示せず)を挿入し、半
田で固着することでマザーボードに挿入実装し易いPGA
型の半導体チップキャリアが得られる。
In such a structure, since the inner conductor pattern 6 exposed in the opening 12 for mounting the semiconductor element is covered with a plating layer such as nickel and further gold plating as described above, it is particularly necessary to apply a resist or a masking material. Instead, a conductor pattern can be formed on the conductor layer 2 of the outer substrate by a conventional subtractive method. The conductive path formed in the through hole 13
In the inner layer conductor pattern 6 connected to the conductor pattern 15, the conductor pattern 14 on the surface of the outer layer substrate 9, and the conductor pattern 7 formed on the opposite side of the recess 3 for mounting the semiconductor element on the inner layer substrate 8, the conductor pattern 7 or the conductor pattern 14 is formed. May be extended to the end of the multilayer wiring board to serve as an external terminal, and the conduction path is not particularly limited. Furthermore, a terminal pin (not shown) is inserted into the through hole 13 and fixed by soldering, so that the PGA which is easy to insert and mount on the motherboard is provided.
A semiconductor chip carrier of the type is obtained.

なお、第2図(c)の内層基板8と第2図(d)の外
層基板9を構成する第1の絶縁層1、第2の絶縁層10と
しては、基材に樹脂を含浸、乾燥して得られたプリプレ
グの樹脂を硬化した絶縁材料が用いられる。ここで第1
と第2の絶縁層1と10の樹脂としては耐熱性、耐湿性に
優れかつ樹脂純度、特にイオン性不純物の少ないものが
好ましい。具体的にはエポキシ樹脂、ポリイミド樹脂、
フッソ樹脂、PPO樹脂等が適している。なお、第1と第
2の絶縁層1と10の基材としては、紙よりガラス繊維な
どの無機材料の方が耐熱性、耐湿性に優れ反りが発生し
にくい等で好ましい。第1と第2の絶縁層1と10の表面
に形成された内層導体パターン6、導体パターン7、そ
して14には、銅、アルミニウム、鉄、ニッケル、ステン
レスなどから適宜選択して適用でき、中でも銅が導電性
優れ特に好ましい。
As the first insulating layer 1 and the second insulating layer 10 constituting the inner substrate 8 in FIG. 2C and the outer substrate 9 in FIG. 2D, the base material is impregnated with resin and dried. An insulating material obtained by curing the resin of the prepreg obtained as described above is used. Here the first
As the resin of the first and second insulating layers 1 and 10, it is preferable to use a resin having excellent heat resistance and moisture resistance and having a low resin purity, particularly a low ionic impurity. Specifically, epoxy resin, polyimide resin,
Fluoro resin, PPO resin and the like are suitable. As the base material of the first and second insulating layers 1 and 10, an inorganic material such as glass fiber is more preferable than paper because it is superior in heat resistance and moisture resistance and hardly causes warpage. The inner layer conductor patterns 6, conductor patterns 7, and 14 formed on the surfaces of the first and second insulating layers 1 and 10 can be appropriately selected and applied from copper, aluminum, iron, nickel, stainless steel, and the like. Copper is particularly preferred because of its excellent conductivity.

〔発明の効果〕〔The invention's effect〕

以上のように本発明の多層配線基板の製造方法によっ
て、多層配線基板を構成する絶縁層の端部まで延設して
配設することができない複雑な導体パターンが配設され
た内層基板を含む多層配線基板において、スルホールの
導電路を介して露出する内層基板の導体パターンに金め
っきのめっき層を形成することで、導体パターンを一時
保護処理し、用済み後除去と言う面倒な工程を省工程す
ることができ、さらに、かかるめっき層を形成するのに
使用した前記スルホールより大きな径の端子ピン挿入用
のスルホールを重ねて穿孔することで、内層基板の導体
パターンの電気めっき用に形成したスルホールを端子ピ
ン挿入用のスルホールとし端子ピンを挿入し固着してス
ルホールを塞ぐことによって、導体パターンと余分なス
ルホールとの間で絶縁性を低下させリーク電流が流れや
すくなることや余分なスルホールの導電路の接続により
導体パターンの回路抵抗が増加することなどを阻止する
効果を持つ多層配線基板が製造できるのである。
As described above, according to the method for manufacturing a multilayer wiring board of the present invention, the multilayer wiring board includes an inner layer substrate on which a complicated conductor pattern that cannot be extended and disposed to the end of the insulating layer constituting the multilayer wiring substrate is provided. By forming a gold-plated plating layer on the conductor pattern of the inner substrate exposed through the through-hole conductive path in the multilayer wiring board, the conductor pattern is temporarily protected and the troublesome process of removal after use is eliminated. Can be formed, and furthermore, a through-hole for inserting a terminal pin having a diameter larger than that of the through-hole used for forming such a plating layer is overlapped and perforated to form an electroplating of the conductor pattern of the inner layer substrate. The through hole is used for inserting the terminal pin, and the terminal pin is inserted and fixed to close the through hole, so that there is a gap between the conductor pattern and the extra through hole. It is able to manufacture a multilayer wiring board having the effect of inhibiting the like to increase the circuit resistance of the conductor pattern by the connection of that or extra Sulfol conduction paths easily leak current reduces sexual flow.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の一実施例の多層配線基板の斜視図で、
第2図(a)、(b)、(c)、(d)、(e)、
(f)、(g)はその多層配線基板を得るための製造方
法の実施例を一連の工程順に示した部材の断面図であ
る。 1…第1の絶縁層 2…導体層 3…半導体素子搭載用の凹部 4…スルホール 5…スルホールの導電路 6…内層導体パターン 7…導体パターン 8…内層基板 9…外層基板 10…第2の絶縁層 11…接着層 13…端子ピン挿入用のスルホール 16…めっき層
FIG. 1 is a perspective view of a multilayer wiring board according to an embodiment of the present invention.
2 (a), (b), (c), (d), (e),
(F), (g) is sectional drawing of the member which showed the Example of the manufacturing method for obtaining the multilayer wiring board in a series of process order. DESCRIPTION OF SYMBOLS 1 ... 1st insulating layer 2 ... Conductor layer 3 ... Concave part for mounting a semiconductor element 4 ... Through hole 5 ... Conductor path of through hole 6 ... Inner layer conductor pattern 7 ... Conductor pattern 8 ... Inner substrate 9 ... Outer substrate 10 ... Second Insulating layer 11 ... Adhesive layer 13 ... Surhole for terminal pin insertion 16 ... Plating layer

フロントページの続き (56)参考文献 特開 平1−93198(JP,A) 特開 昭63−114239(JP,A) 特開 昭63−255996(JP,A)Continuation of front page (56) References JP-A-1-93198 (JP, A) JP-A-63-114239 (JP, A) JP-A-63-255996 (JP, A)

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】第1の絶縁層とこの第1の絶縁層に形成さ
れた導体パターン層とこの導体パターン層から第1の絶
縁層に到る凹部とこの導体パターンに形成された金めっ
きを含むめっき層を有する内層基板において、該内層基
板のめっき層を、内層基板に形成したスルホールの導電
路で絶縁層両面の導体パターン接続し、半導体素子搭載
用の凹部が形成されたのと反対側の導体パターンを端部
に延設して外部端子として形成し、第2の絶縁層とこの
第2の絶縁層に形成された導体層と第2の絶縁層から導
体層に連通する開口を有し、かつこの開口は上記凹部よ
りも開口面が大きな外層基板を前記凹部が開口内に位置
し、前記導体パターンと第2の絶縁層とを重ね合わせて
被圧体とし、この被圧体を熱圧成形し、得られた多層配
線基板の外層基板の導体層に導体パターンを形成するこ
とを特徴とする多層配線基板の製造方法。
A first insulating layer, a conductive pattern layer formed on the first insulating layer, a concave portion extending from the conductive pattern layer to the first insulating layer, and a gold plating formed on the conductive pattern. In the inner layer substrate having a plating layer including the inner layer substrate, the plating layer of the inner layer substrate is connected to the conductor pattern on both sides of the insulating layer by the conductive path of the through hole formed in the inner layer substrate, and the side opposite to the side where the concave portion for mounting the semiconductor element is formed. And a second insulating layer, a conductive layer formed on the second insulating layer, and an opening communicating with the conductive layer from the second insulating layer. The opening is formed in an outer layer substrate having an opening surface larger than that of the recess, the recess is located in the opening, and the conductor pattern and the second insulating layer are overlapped to form a pressure-receiving body. Outer layer substrate of multilayer wiring board obtained by hot pressing Method for manufacturing a multilayer wiring board, which comprises forming a conductor pattern on the conductor layer.
【請求項2】請求項1の外層基板の導体層に導体パター
ンを形成するときに、前記内層基板に形成したスルホー
ルにこのスルホールの径よりも大きなスルホールを形
成、導電路とし、第1、第2の絶縁層の導体パターンと
接続し、半導体素子搭載用の凹部が形成されたとの反対
側の導体パターンを端部に延設して外部端子として金め
っきを含むめっき層を形成することを特徴とする請求項
1記載の多層配線基板の製造方法。
2. The method according to claim 1, wherein when forming a conductor pattern on the conductor layer of the outer substrate, a through hole formed in the inner substrate is formed with a through hole having a diameter larger than the diameter of the through hole. A conductive layer on the side opposite to the concave portion for mounting the semiconductor element, which is connected to the conductive pattern of the insulating layer of No. 2 and extending to the end to form a plating layer containing gold plating as an external terminal. The method for manufacturing a multilayer wiring board according to claim 1, wherein
JP1106148A 1989-04-24 1989-04-24 Method for manufacturing multilayer wiring board Expired - Lifetime JP2734625B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1106148A JP2734625B2 (en) 1989-04-24 1989-04-24 Method for manufacturing multilayer wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1106148A JP2734625B2 (en) 1989-04-24 1989-04-24 Method for manufacturing multilayer wiring board

Publications (2)

Publication Number Publication Date
JPH02305494A JPH02305494A (en) 1990-12-19
JP2734625B2 true JP2734625B2 (en) 1998-04-02

Family

ID=14426263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1106148A Expired - Lifetime JP2734625B2 (en) 1989-04-24 1989-04-24 Method for manufacturing multilayer wiring board

Country Status (1)

Country Link
JP (1) JP2734625B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4643281B2 (en) * 2005-01-26 2011-03-02 株式会社フジクラ Multilayer flexible printed wiring board and manufacturing method thereof
US8692364B2 (en) 2009-08-07 2014-04-08 Nec Corporation Semiconductor device and method for manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0746713B2 (en) * 1986-10-31 1995-05-17 イビデン株式会社 Semiconductor mounting board
JPS63255996A (en) * 1987-04-14 1988-10-24 シチズン時計株式会社 Multilayer board for semiconductor chip mounting
JP2549393B2 (en) * 1987-10-02 1996-10-30 新光電気工業株式会社 Circuit board manufacturing method

Also Published As

Publication number Publication date
JPH02305494A (en) 1990-12-19

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