JP2733168B2 - Resin-sealed semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a lead-on-chip ( L
It relates resin-sealed semiconductor device having a ead On Chip) structure.

[0002]

2. Description of the Related Art With an increase in the size of a semiconductor chip, a plurality of inner leads are adhered to the circuit element forming surface of the semiconductor chip via an insulating film coated with an adhesive on both sides with the adhesive. And the semiconductor chip were connected by a bonding wire and sealed with a sealing resin.
Lead-on-Chip (Lead On Chip = hereinafter L
Semiconductor device having an OC structure (Japanese Patent Publication No. 61-2181)
No. 39) has been proposed. However, in the conventional resin-encapsulated semiconductor device, an insulating film having an adhesive applied to both surfaces is prepared in advance, and the insulating film is first adhered to a lead frame, and then the semiconductor chip is attached using the adhesive on one surface. There was a problem that workability was poor due to adhesion.
Further, there was a disadvantage that the bonding temperature was as high as about 400 ° C. Furthermore, a polyimide-based material is usually used as the insulating film. However, the polyimide film has high water absorption, and there is a problem in that moisture absorbed is vaporized and expanded in the package at the time of solder reflow, causing cracks in the package.

[0003]

SUMMARY OF THE INVENTION The present invention relates to the aforementioned L
An object of the present invention is to provide a semiconductor device having improved workability in manufacturing a resin-sealed semiconductor device having an OC structure and having various reliability.

[0004]

According to the present invention, there is provided a compound represented by the general formula (1):
A diamine compound having a photosensitive group represented by
20 mol%, 0% of diamine compound having no photosensitive group
And a siloxane-containing tetracarboxylic dianhydride represented by the formula (2) in an amount of 5 to 80 mol%.
Tetorakaru consisting ~60mol%, tetracarboxylic <br/> dianhydride having no siloxane and a 40 to 95 mol%
A coating layer of a photosensitive resin composition obtained by reacting with a boric acid dianhydride component is provided on a circuit element forming surface of a semiconductor chip, the coating layer is used as an adhesive, and a plurality of inner leads are formed on the semiconductor chip. The chip is adhered to the inner lead and the semiconductor chip is connected with a bonding wire, and a lead-on chip ( Lead On) is sealed with a sealing resin.
(Chip ) structure.

[0005]

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[0006]

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[0007]

The photosensitive diamine compound represented by the general formula (1) used in the present invention preferably accounts for at least 20 mol% of the diamine component to be reacted with tetracarboxylic dianhydride. 20m content in diamine component
When the amount is less than ol%, the proportion of the photosensitive group in the whole composition is insufficient even if the photosensitive resin composition produced according to the present invention is obtained, and the sensitivity and resolution required for practical use cannot be obtained, which is not preferable.

In the photosensitive diamine compound represented by the general formula (1) used in the present invention, Ar in the formula represents an aromatic residue, and specific examples of the structure are as follows. Expressed by the general formula (3),

[0009]

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And the like. Here, X is -O-,-
_{SO 2 -, - S -,} - CO -, - C (CH 3) 2 -, -
One type selected from C (CF ₃ ) _2- and the like is shown.

On the other hand, the content of the diamine compound having no photosensitive group in the diamine component to be reacted with the tetracarboxylic dianhydride is preferably 80 mol% or less. If it exceeds 80 mol%, the number of photosensitive groups becomes insufficient, and the sensitivity and resolution required for practical use cannot be obtained. As the diamine compound having no photosensitive group used in the present invention, for example, m-phenylene-diamine, 1-isopropyl-2,4-phenylene-diamine, p-phenylene-diamine, 4,4'-diamino-diphenylpropane , 3,3'-diamino-diphenylpropane, 4,4 '
-Diamino-diphenylethane, 3,3'-diamino-diphenylethane, 4,4'-diamino-diphenylmethane, 3,3'-diamino-diphenylmethane, 4,4'-diamino-diphenyl-sulfide, 3,3'-diamino -Diphenyl sulfide, 4,
4'-diamino-diphenylsulfone, 3,3'-diamino-diphenylsulfone, 4,4'-diamino-diphenylether,
3,3'-diamino-diphenyl ether, benzidine, 3,3 '
-Diamino-biphenyl, 3,3'-dimethyl-4,4'-diamino-
Biphenyl, 3,3'-dimethoxy-benzidine, 4,4 "-diamino-p-terphenyl, 3,3" -diamino-p-terphenyl, bis (p-amino-cyclohexyl) methane, bis (p-β
-Amino-t-butylphenyl) ether, bis (p-β-methyl-δ-aminopentyl) benzene, p-bis (2-methyl-4-
(Amino-pentyl) benzene, p-bis (1,1-dimethyl-5-amino-pentyl) benzene, 1,5-diamino-naphthalene,
2,6-diamino-naphthalene, 2,4-bis (β-amino-t-butyl) toluene, 2,4-diamino-toluene, m-xylene-2,5
-Diamine, p-xylene-2,5-diamine, m-xylylene-
Diamine, p-xylylene-diamine, 2,6-diamino-pyridine, 2,5-diamino-pyridine, 2,5-diamino-1,3,4-oxadiazole, 1,4-diamino-cyclohexane, piperazine, Methylene-diamine, ethylene-diamine, propylene-diamine, 2,2-dimethyl-propylene-diamine, tetramethylene-diamine, pentamethylene-diamine, hexamethylene-diamine, 2,5-dimethyl-hexamethylene-diamine, 3- Methoxy-hexamethylene-diamine, heptamethylene-diamine, 2,5-dimethyl-heptamethylene-diamine, 3-methyl-heptamethylene-diamine, 4,4-dimethyl-heptamethylene-diamine, octamethylene-diamine, nonamethylene- Diamine, 5-methyl-
Nonamethylene-diamine, 2,5-dimethyl-nonamethylene-
Diamine, decamethylene-diamine, 1,10-diamino-1,1
0-dimethyl-decane, 2,11-diamino-dodecane, 1,12-diamino-octadecane, 2,12-diamino-octadecane,
Examples include, but are not limited to, 2,17-diamino-icosane.

[0012] Of the tetracarboxylic dianhydride component used in the present invention, 5 to 60 mol% is a siloxane-containing tetracarboxylic dianhydride represented by the formula (2). The siloxane-containing tetracarboxylic dianhydride has an effect of lowering the modulus of elasticity of the polyimide film, and protects the semiconductor chip from stress when the semiconductor chip and the lead frame are pressed. In addition, the glass transition point (hereinafter referred to as T
g) and the compression temperature can be lowered. Further, it is possible to reduce the water absorption rate and prevent package cracks during solder reflow. Since its effect is not exhibited at less than 5 mol% in tetracarboxylic dianhydride,
It is desirable that the content be 5 mol% or more. Also 60mol
%, It is not preferable because a normal pattern cannot be obtained at the time of development and the heat resistance of the polyimide film after heating is greatly reduced. The degree of polymerization n of the siloxane must be 1 to 100, and if n is less than 1, the effect of lowering the elastic modulus cannot be obtained. When it is used, the reaction with the diamine hardly proceeds quantitatively, remains as an unreacted product, the molecular weight does not increase, the flexibility is lowered, and cracks are easily generated, which is not preferable.

As the tetracarboxylic dianhydride component used in the present invention, other than the siloxane-containing tetracarboxylic dianhydride can be used as long as it does not exceed 95 mol% of the total acid anhydride component. . The tetracarboxylic dianhydride component to be reacted with the diamine component may be of two types,
Although a mixture of three or more kinds may be used, examples of the tetracarboxylic dianhydride used include pyromellitic dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 4,4 '-Oxydiphthalic dianhydride, 3,3', 4,4'-benzophenonetetracarboxylic dianhydride, 2,2 ', 3,3'-benzophenonetetracarboxylic dianhydride, 2,3,3' , 4'-benzophenonetetracarboxylic dianhydride, naphthalene-2,
3,6,7-tetracarboxylic dianhydride, naphthalene-1,2,5,6
-Tetracarboxylic dianhydride, naphthalene-1,2,4,5-tetracarboxylic dianhydride, naphthalene-1,4,5,8-tetracarboxylic dianhydride, naphthalene-1,2,6, 7-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, 4,8
-Dimethyl-1,2,3,5,6,7-hexahydronaphthalene-2,3,
6,7-tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic Acid dianhydride, 2,3,
6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 1,4,5,8-tetrachloronaphthalene-2,3,6,7
-Tetracarboxylic dianhydride, 3,3 ', 4,4'-diphenyltetracarboxylic dianhydride, 2,2', 3,3'-diphenyltetracarboxylic dianhydride, 2,3,3 ' , 4'-Diphenyltetracarboxylic dianhydride, 3,3 ", 4,4" -p-terphenyltetracarboxylic dianhydride, 2,2 ", 3,3" -p-terphenyltetracarboxylic acid Dianhydride, 2,3,3 ", 4" -p-terphenyltetracarboxylic dianhydride, 2,2-bis (2,3-dicarboxyphenyl)
-Propane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) -propane dianhydride, bis (2,3-dicarboxyphenyl) ether dianhydride, bis (3,4-dicarboxyphenyl) ) Ether dianhydride, bis (2,3-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl)
Methane dianhydride, bis (2,3-dicarboxyphenyl) sulfone dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane Dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, perylene-2,3,8,9-tetracarboxylic dianhydride, perylene-3,4,9,10- Tetracarboxylic dianhydride,
Perylene-4,5,10,11-tetracarboxylic dianhydride, perylene-5,6,11,12-tetracarboxylic dianhydride, phenanthrene-1,2,7,8-tetracarboxylic dianhydride , Phenanthrene-1,2,6,7-tetracarboxylic dianhydride, phenanthrene-1,2,9,10-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride Anhydride, pyrazine-
2,3,5,6-tetracarboxylic dianhydride, pyrrolidine-2,3,
4,5-tetracarboxylic dianhydride, thiophene-2,3,4,5-
Examples include, but are not limited to, tetracarboxylic dianhydride.

The solvent of the reaction system in the present invention is an organic polar solvent which does not react with tetracarboxylic dianhydride or diamine, and is not only inert to the system but also a solvent for the product. The organic polar solvent must be a solvent for at least one of the reaction components, preferably both. Typical solvents of this type are:
N, N-dimethylformamide, N, N-dimethylacetamide, N, N-diethylformamide, N, N-diethylacetamide, N, N-dimethylmethoxyacetamide, dimethylsulfoxide, hexamethylphosphoamide, N-methyl-2
-Pyrrolidone, pyridine, dimethylsulfone, tetramethylenesulfone, dimethyltetramethylenesulfone, etc., and these solvents are used alone or in combination. Besides, benzene, benzonitrile, dioxane, butyrolactone,
Non-solvents such as xylene, toluene and cyclohexanone
It is used as a dispersion medium of a raw material, a reaction regulator, a volatilization regulator of a solvent from a product, a film smoothing agent, and the like.

The sensitizer used in the photosensitive resin composition of the present invention includes benzophenone, acetophenone, anthrone, p, p'-tetramethyldiaminobenzophenone (Michler's ketone), phenanthrene, 2-nitrofluorene, and 5-nitroacetate. Naphthene, benzoquinone, N-acetyl-p-nitroaniline, p-nitroaniline, 2-ethylanthraquinone, 2-tert-butylanthraquinone,
N-acetyl-4-nitro-1-naphthylamine, picramide,
1,2-benzanthraquinone, 3-methyl-1,3-diaza-1,9-
Benzuanthrone, p, p'-tetraethyldiaminobenzophenone, 2-chloro-4-nitroaniline, dibenzalacetone, 1,2-naphthoquinone, 2,5-bis- (4'-diethylaminobenzal) -cyclopentane, 2,6-bis- (4'-diethylaminobenzal) -cyclohexanone, 2,6-bis- (4'-
Dimethylaminobenzal) -4-methyl-cyclohexanone, 2,6-bis- (4'-diethylaminobenzal) -4-methyl-
Cyclohexanone, 4,4'-bis- (dimethylamino) -chalcone, 4,4'-bis- (diethylamino) -chalcone, p-dimethylaminobenzylidene indanone, 1,3-bis- (4'-dimethylaminoben Monkey) -acetone, 1,3-bis- (4'-diethylaminobenzal) -acetone, N-phenyl-diethanolamine, Np-tolyl-diethylamine, styryl compounds, etc.
The amount is preferably 0.1 part by weight or more and 20 parts by weight or less based on 00 parts by weight. Of course, two or more kinds may be used in combination.

The initiator used in the photosensitive resin composition includes 2,2-dimethoxy-2-phenyl-acetophenone, 1-hydroxy-cyclohexyl-phenyl ketone,
Methyl- [4- (methylthio) phenyl] -2-morpholino-1-
Propane, 3,3 ′, 4,4′-tetra- (t-butylperoxycarbonyl) benzophenone, benzyl, benzoin-isopropyl ether, benzoin-isobutyl ether, 4,
4'-dimethoxybenzyl, 1,4-dibenzoylbenzene, 4
-Benzoylbiphenyl, 2-benzoylnaphthalene, methyl-ο-benzoylbenzoate, 2,2'-bis (ο-chlorophenyl) -4,4 ', 5,5'-tetraphenyl-1,2'-biimidazole, 10 -Butyl-2-chloroacridone, ethyl-4-dimethylaminobenzoate, dibenzoylmethane, 2,4-
Diethylthioxanthone, 3,3-dimethyl-4-methoxy-benzophenone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1- (4-isopropylphenyl) -2-hydroxy-2-methylpropane- 1-one, 1- (4-dodecylphenyl)
2-hydroxy-2-methylpropan-1-one, 1-phenyl-
1,2-butanedione-2- (ο-methoxycarbonyl) oxime, 1-phenyl-propanebutanedione-2- (ο-benzoyl) oxime, 1,2-diphenyl-ethanedione-1- (ο-benzoyl) oxime, 1,3-diphenyl-propanetrione
2- (ο-benzoyl) oxime, 1-phenyl-3-ethoxy-
And propanetrione-2- (ο-bezoyl) oxime and oxazolone compounds. It goes without saying that two or more kinds may be used in combination, but the amount is preferably 0.1 to 20 parts by weight based on 100 parts by weight of the polyimide precursor. If the compounding amount of the sensitizer and the initiator is less than 0.1 part by weight based on 100 parts by weight of the polyimide precursor, the effect cannot be obtained, and if it exceeds 20 parts by weight, the film properties after heat treatment and curing are deteriorated. Is not preferred. Further, various additives such as a polymerization inhibitor, a plane smoothing agent, an adhesion improver, and a dye can be appropriately added to the photosensitive resin composition of the present invention.

As a method of applying the photosensitive resin composition obtained as described above on a substrate, there are a spin coater, a bar coater, screen printing and the like. After coating, the coating film is formed by air drying, heating drying, vacuum drying, or the like. The resin composition of the present invention, which has been formed into a coating film on the substrate, is irradiated with actinic radiation in a desired pattern. As the actinic radiation, ultraviolet rays and visible light having a short wavelength, that is, 300 to 500 nm in a wavelength range are preferably used. Next, a relief pattern is obtained by dissolving and removing the unirradiated portion with a developing solution. An appropriate developer is selected according to the structure of the polymer. The developing solution used in this case is a solvent for the present composition, N-methyl-2-pyrrolidone, N-acetyl-2-pyrrolidone, N, N-dimethylformamide, N, N'-dimethylacetamide, dimethylsulfoxide, hexamethyl Phosphortriamide or the like can be used alone or as a mixture with a non-solvent of a composition such as methanol, ethanol, isopropyl alcohol, water, methyl carbitol and ethyl carbitol. The development can be performed by a method such as spraying the above-mentioned developer onto the coating film surface, immersing the developer in the developer, or applying ultrasonic waves while impregnating the developer. The relief pattern formed by development is preferably subsequently washed with a rinsing liquid. As the rinse solution, methanol, isopropyl alcohol, butyl acetate, or the like having good miscibility with development is preferably used. The polymer of the relief pattern obtained by the above treatment is a precursor of a polyimide-based polymer, and becomes a heat-resistant polymer having an imide ring or other cyclic structure by heat treatment.

Next, an example of application of the photosensitive resin composition of the present invention to a semiconductor device having a LOC type structure will be described with reference to the drawings. FIG. 1 is a cross-sectional view of a resin-encapsulated semiconductor device having a LOC structure according to the present invention. A chip 2 has a coating layer of a photosensitive resin composition of the present invention. The chip 2 and the lead frame 3 are bonded and fixed as the adhesive 1, the chip 2 and the lead frame 3 are connected with the gold wire 4, and then sealed with the resin seal 5. As a bonding method, the chip is heated to 180 to 350 ° C. with a hot plate or the like, and is 0.1 to 10 Kg / c.
Pressure bonding for several seconds at a pressure of m ² . The Tg of the photosensitive resin is 1
Since it is relatively low at 60 to 260 ° C., pressure bonding can be performed at low temperature and low pressure. FIG. 2 is a cross-sectional view of a conventional resin-encapsulated semiconductor device having a LOC type structure.
The chip 2 and the lead frame 3 are adhered and fixed via the above, and then sealed with a sealing resin 5. The conventional adhesive 1 'uses polyetheramide, requires a high temperature of about 400 ° C., and after bonding the adhesive insulating film 6 to the lead frame 3, the chip 2 and the lead frame 3 are bonded. So workability is not good. Further, as the insulating film of the insulating film 6 with an adhesive, a polyimide film having a large water absorption coefficient and a linear expansion coefficient of about 20 μm is used, so that there is a problem that a package crack occurs at the time of solder immersion. Since the adhesive layer of the photosensitive resin has a low water absorption and a thin film, no package crack is generated, and a resin-encapsulated semiconductor device having a highly reliable LOC structure can be obtained.

Hereinafter, the present invention will be described specifically with reference to examples.

[0020]

EXAMPLE 1 A four-neck separable flask equipped with a thermometer, a stirrer, a raw material inlet, and a dry air inlet tube was charged with 3,5-diamino-benzoic acid [(1,3-methacryloyl) glyceryl]. 36.24 g (100 mol%) of the ester and 200 g of N-methyl-2-pyrrolidone are added, and the contents are dissolved by stirring. After dissolution, the flask was cooled with water and cooled to obtain 15.27 g (70 mol%) of pyromellitic dianhydride and the following formula (4)

[0021]

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25.01 g of the siloxane-containing acid dianhydride of
(30 mol%) is gradually added, and the temperature of the system is maintained at 20 ° C. After completion of the addition, stirring is continued at 20 ° C. for 8 hours to complete the reaction. At this time, dry air is introduced into the reaction system from the time of dissolution of the diamine compound until the end of the reaction. The obtained photosensitive polyimide precursor solution was a brown transparent viscous liquid, and no gel was observed. 4.0 g of N-phenyl-diethanolamine was added to the polyimide precursor solution,
2.0 g of 1-phenyl-1,2-butanedione-2- (O-methoxycarbonyl) oxime and 0.067 g of hydroquinone were added, and coated on a silicon wafer.
Prebaking was performed at 0 ° C. for 60 minutes to obtain a film having a thickness of about 20 μm. The coating film was irradiated with ultraviolet light through a photomask having a test pattern using a 500 W high-pressure mercury lamp. The UV intensity on the exposed surface is 1 at a wavelength of 365 nm.
It was 4 mW / cm ² . After exposure, development was carried out using a developer containing 60% by weight of N-methyl-2-pyrrolidone and 40% by weight of methanol, followed by rinsing with isopropyl alcohol to obtain a pattern. The film thickness after development was measured, and when the irradiation amount when the film thickness after development was の of the coating film thickness was taken as sensitivity, 70
mJ / cm ² . The resolution was about 18 μm.
Next, the pattern is formed at 150 ° C., 250 ° C., 350 ° C.
Each of the samples was subjected to a heat treatment for 30 minutes. On the other hand, when a tensile test was performed on the coating film subjected to the heat treatment up to 350 ° C., the strength was 6.5 kg / mm ² , the elongation percentage was 20%, and the elastic modulus was 120.
kg / mm ² . The Tg was 180 ° C. and the water absorption was 0.1%. Next, the silicon wafer is 6 × 15
mm, and the obtained semiconductor chip is pressed against a 42 alloy lead frame at 200 ° C. for 1 second (1 kg / cm).
² ) Adhered. Then LOC with epoxy resin-based sealing material
The structure was sealed in a 300 mil wide SOJ. After leaving these 20 sealed products under 85 ° C./85% RH for 16 hours,
When subjected to an IR flow (240 ° C. × 10 seconds) and checked for the number of cracks generated in the package, the number of cracks generated was 0/20.

Example 2 The reaction components used for the synthesis of the polyimide precursor were 36.24 g (100 mol%) of 3,5-diamino-benzoic acid [(1,3-methacryloyl) glycerin] ester and pyromellitic dianhydride 8 0.72 g (40 mol%), 4,
4 ′, 4,4′-benzophenonetetracarboxylic dianhydride was 16.11 g (50 mol%).
By performing the same operation as above, a photosensitive resin composition was obtained. The sensitivity was 40 mJ / cm ² , the resolution was 12 μm, the strength of the coating film after curing was 9.0 kg / m ² , the elongation was 10%, and the elastic modulus was 210 kg / mm ² . Tg is 210 ° C.,
The water absorption was 0.2%. Using the above resin composition,
In the same manner as in Example 1, the semiconductor chip and the lead frame made of 42 alloy were bonded at 280 ° C. for 3 seconds under pressure (1 kg / cm ² ) and sealed with an epoxy resin-based sealing material. When the package crack of this semiconductor device was examined, it was 0/20.

COMPARATIVE EXAMPLE 1 A semiconductor chip and a 42 alloy lead frame were formed in the same manner as in Example 1 using an insulating film in which a polyetheramide-based adhesive was applied to both surfaces of a Kapton film (water absorption: 2%). It was bonded by pressing (1 kg / cm ² ) at 300 ° C. for 3 seconds and sealed with an epoxy resin-based sealing material. When the package crack of this semiconductor device was examined, it was 15/20.

Comparative Example 2 The same adhesive as in Comparative Example 1 was applied to an Iupirex film (water absorption: 1%), and a semiconductor device was fabricated in the same manner as in Example 1. When the package crack of this semiconductor device was examined, it was 9/20.

[0026]

According to the present invention, the bonding between the chip and the lead frame can be performed at a lower temperature than in the prior art, and the number of working steps can be reduced. In addition, since the moisture absorbed in the insulating film during reflow can be prevented from evaporating and expanding in the package, the occurrence of package cracks can be prevented. Therefore, an inexpensive and highly reliable resin-encapsulated semiconductor device having a LOC structure can be provided.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a resin-sealed semiconductor device having a LOC structure according to the present invention.

FIG. 2 is a cross-sectional view of a resin-sealed semiconductor device having a LOC structure according to the related art.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code Agency reference number FI Technical display location H01L 23/29 H01L 23/30 D 23/31

Claims (1)

(57) [Claims] 1. A diamine component comprising 100 to 20 mol% of a diamine compound having a photosensitive group represented by the general formula (1) and 0 to 80 mol% of a diamine compound having no photosensitive group represented by the formula (2): 5 to 60 mol% of a siloxane-containing tetracarboxylic dianhydride represented by the following formula, and 40 to 95 m of a tetracarboxylic dianhydride having no siloxane.
ol% of a photosensitive resin composition obtained by reacting with a tetracarboxylic acid dianhydride component on the circuit element forming surface of a semiconductor chip, and using the coat layer as an adhesive, the inner leads, and adhered to the semiconductor chip, and said inner leads and the semiconductor chip are connected by bonding wires were sealed with a sealing resin Ridoo
-Chip (Lead On Chip) resin-sealed semiconductor device characterized by having a structure. Embedded image Embedded image