JP2685084B2 - シーモスパワー増幅器 - Google Patents

シーモスパワー増幅器

Info

Publication number
JP2685084B2
JP2685084B2 JP3273469A JP27346991A JP2685084B2 JP 2685084 B2 JP2685084 B2 JP 2685084B2 JP 3273469 A JP3273469 A JP 3273469A JP 27346991 A JP27346991 A JP 27346991A JP 2685084 B2 JP2685084 B2 JP 2685084B2
Authority
JP
Japan
Prior art keywords
output
transistor
stage
signals
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3273469A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04351108A (ja
Inventor
芳遠 李
イルスン ベイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH04351108A publication Critical patent/JPH04351108A/ja
Application granted granted Critical
Publication of JP2685084B2 publication Critical patent/JP2685084B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
JP3273469A 1990-11-27 1991-09-26 シーモスパワー増幅器 Expired - Fee Related JP2685084B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019900019296A KR950007836B1 (ko) 1990-11-27 1990-11-27 시모스 파워 증폭기
KR1990P19296 1990-11-27

Publications (2)

Publication Number Publication Date
JPH04351108A JPH04351108A (ja) 1992-12-04
JP2685084B2 true JP2685084B2 (ja) 1997-12-03

Family

ID=19306609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3273469A Expired - Fee Related JP2685084B2 (ja) 1990-11-27 1991-09-26 シーモスパワー増幅器

Country Status (6)

Country Link
US (1) US5177450A (US20020125480A1-20020912-P00900.png)
JP (1) JP2685084B2 (US20020125480A1-20020912-P00900.png)
KR (1) KR950007836B1 (US20020125480A1-20020912-P00900.png)
DE (1) DE4133902C2 (US20020125480A1-20020912-P00900.png)
FR (1) FR2669788A1 (US20020125480A1-20020912-P00900.png)
GB (1) GB2251525B (US20020125480A1-20020912-P00900.png)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3320434B2 (ja) * 1991-11-28 2002-09-03 沖電気工業株式会社 演算増幅回路
US5315264A (en) * 1993-05-10 1994-05-24 Exar Corporation Rail-to-rail opamp with large sourcing current and small quiescent current
US5825244A (en) * 1995-01-20 1998-10-20 Crystal Semiconductor Low power class AB integrated circuit amplifier having improved linearity when driving high impedance loads
US5497122A (en) * 1995-01-20 1996-03-05 Crystal Semiconductor Low power class-AB integrated circuit amplifier
US5973956A (en) * 1995-07-31 1999-10-26 Information Storage Devices, Inc. Non-volatile electrically alterable semiconductor memory for analog and digital storage
JP3360501B2 (ja) * 1995-09-20 2002-12-24 三菱電機株式会社 増幅回路及び携帯電話用半導体集積回路装置
KR100213258B1 (ko) * 1996-10-23 1999-08-02 윤종용 연산증폭기
JP3416479B2 (ja) * 1997-09-03 2003-06-16 キヤノン株式会社 演算増幅器
JP3173460B2 (ja) * 1998-04-27 2001-06-04 日本電気株式会社 電力増幅器
US7082293B1 (en) 1999-10-21 2006-07-25 Broadcom Corporation Adaptive radio transceiver with CMOS offset PLL
US6738601B1 (en) 1999-10-21 2004-05-18 Broadcom Corporation Adaptive radio transceiver with floating MOSFET capacitors
US7555263B1 (en) * 1999-10-21 2009-06-30 Broadcom Corporation Adaptive radio transceiver
US7113744B1 (en) * 1999-10-21 2006-09-26 Broadcom Corporation Adaptive radio transceiver with a power amplifier
US7558556B1 (en) 1999-10-21 2009-07-07 Broadcom Corporation Adaptive radio transceiver with subsampling mixers
US8014724B2 (en) 1999-10-21 2011-09-06 Broadcom Corporation System and method for signal limiting
US7299006B1 (en) * 1999-10-21 2007-11-20 Broadcom Corporation Adaptive radio transceiver
US6961546B1 (en) 1999-10-21 2005-11-01 Broadcom Corporation Adaptive radio transceiver with offset PLL with subsampling mixers
US6359512B1 (en) * 2001-01-18 2002-03-19 Texas Instruments Incorporated Slew rate boost circuitry and method
US6583669B1 (en) * 2002-04-08 2003-06-24 National Semiconductor Corporation Apparatus and method for a compact class AB turn-around stage with low noise, low offset, and low power consumption
TW535364B (en) * 2002-06-14 2003-06-01 Au Optronics Corp Digital-to-analog converted circuit for a display
CN101359898B (zh) * 2007-07-31 2011-07-06 展讯通信(上海)有限公司 动态cmos运算放大器的压摆率增加器
US8022766B2 (en) * 2010-02-01 2011-09-20 Javelin Semiconductor, Inc. CMOS power amplifiers having integrated one-time programmable (OTP) memories
JP7325649B2 (ja) * 2020-08-28 2023-08-14 三菱電機株式会社 コンパレータ、発振器、及び、電力変換器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE412670B (sv) * 1978-02-07 1980-03-10 Hoglund Lennart Harry Erik Elektrisk forsterkare
JPS6119551Y2 (US20020125480A1-20020912-P00900.png) * 1978-05-16 1986-06-12
US4253033A (en) * 1979-04-27 1981-02-24 National Semiconductor Corporation Wide bandwidth CMOS class A amplifier
JPS5737908A (en) * 1980-08-14 1982-03-02 Sony Corp Output amplifying circuit
US4480230A (en) * 1983-07-05 1984-10-30 National Semiconductor Corporation Large swing CMOS power amplifier
JPS60229408A (ja) * 1984-04-27 1985-11-14 Pioneer Electronic Corp オ−デイオ信号増幅器
US4656437A (en) * 1985-12-27 1987-04-07 At&T Bell Laboratories CMOS operational amplifier with improved common-mode rejection
US4658219A (en) * 1985-12-27 1987-04-14 At&T Bell Laboratories Folded cascode field-effect transistor amplifier with increased gain
IT1201839B (it) * 1986-08-08 1989-02-02 Sgs Microelettronica Spa Amplificatore operazionale di potenza cmos ad uscita interamente differenziale

Also Published As

Publication number Publication date
GB2251525B (en) 1995-07-05
DE4133902C2 (de) 2002-02-07
KR920011054A (ko) 1992-06-27
JPH04351108A (ja) 1992-12-04
US5177450A (en) 1993-01-05
DE4133902A1 (de) 1992-06-04
FR2669788A1 (fr) 1992-05-29
FR2669788B1 (US20020125480A1-20020912-P00900.png) 1997-02-14
GB9121142D0 (en) 1991-11-13
KR950007836B1 (ko) 1995-07-20
GB2251525A (en) 1992-07-08

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