JP2680676B2 - Synthesis method of vapor phase diamond - Google Patents

Synthesis method of vapor phase diamond

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Publication number
JP2680676B2
JP2680676B2 JP9805889A JP9805889A JP2680676B2 JP 2680676 B2 JP2680676 B2 JP 2680676B2 JP 9805889 A JP9805889 A JP 9805889A JP 9805889 A JP9805889 A JP 9805889A JP 2680676 B2 JP2680676 B2 JP 2680676B2
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JP
Japan
Prior art keywords
diamond
combustion
box
oxygen
flame
Prior art date
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Expired - Fee Related
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JP9805889A
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Japanese (ja)
Other versions
JPH02279593A (en
Inventor
邦雄 小巻
洋一 広瀬
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Showa Denko KK
Original Assignee
Showa Denko KK
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Publication of JPH02279593A publication Critical patent/JPH02279593A/en
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Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は耐摩耗性、耐食性、高熱伝導性、高比弾性等
の特性を有し、研磨材、光学材料、超硬工具材、摺動
材、耐食材、音響振動材、刃先材用部材等に有用な膜
状、粒状のダイヤモンドの気相法合成に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention has characteristics such as wear resistance, corrosion resistance, high thermal conductivity, and high specific elasticity, and is used as an abrasive, an optical material, a cemented carbide tool material, and a sliding member. The present invention relates to vapor-phase synthesis of film-like and granular diamond useful for materials, food materials, acoustic vibration materials, cutting edge materials, and the like.

[従来の技術] ダイヤモンドの合成法としては超高圧条件下での、
鉄、ニッケル系等の触媒による合成法や爆薬法による黒
鉛の直接変換法が従来より実施されている。
[Prior Art] As a method for synthesizing diamond, under ultrahigh pressure conditions,
Conventionally, a synthesis method using an iron or nickel-based catalyst or a direct conversion method of graphite using an explosive method has been practiced.

近年、低圧CVD法として炭化水素、又は窒素、酸素等
を含む有機化合物と水素との混合ガスを熱フィラメン
ト、マイクロ波プラズマ、高周波プラズマ、直流放電プ
ラズマ、直流アーク放電等により励起状態としてダイヤ
モンドを合成する方法が開発されている。
In recent years, as a low-pressure CVD method, hydrocarbon or a mixed gas of hydrogen and an organic compound containing nitrogen, oxygen, etc. and hydrogen are synthesized by hot filament, microwave plasma, high-frequency plasma, direct current discharge plasma, direct current arc discharge, etc. to excite diamond. The way to do is being developed.

さらに最近、本件出願人は燃焼炎中の非酸化性領域で
のダイヤモンドの合成法を開発し、特願昭63−71758号
(特開平1−282193号)として出願しており、本件発明
はこの改善法に当たる。
More recently, the applicant of the present invention has developed a method for synthesizing diamond in the non-oxidizing region in a combustion flame, and has filed an application as Japanese Patent Application No. 63-71758 (Japanese Patent Application Laid-Open No. 1-282193). It corresponds to the improvement method.

[発明が解決しようとする課題] 特願昭63−71758号(特開平1−282193号)の発明は
従来法に比べ簡易な手段で、しかも大面積の膜状ダイヤ
モンドをも生成しうる気相合成法であって、その要点は
炭素を含むダイヤモンド析出用原料化合物を不完全燃焼
領域を有するように燃焼させ、該不完全燃焼領域中、又
は該領域の近傍の非酸化性雰囲気中にダイヤモンド析出
用基材を設置し、基材温度をダイヤモンド析出温度に保
持することにより基材にダイヤモンドを析出させる方法
である。
[Problems to be Solved by the Invention] The invention of Japanese Patent Application No. 63-71758 (Japanese Patent Laid-Open No. 1-282193) is a simpler method than the conventional method, and is capable of producing a large area of film-like diamond. A synthesis method, the main point of which is to combust a raw material compound for diamond precipitation containing carbon so as to have an incomplete combustion region, and to deposit diamond in the incomplete combustion region or in a non-oxidizing atmosphere near the region. It is a method of depositing diamond on the substrate by setting a substrate for use and maintaining the substrate temperature at the diamond deposition temperature.

この方法は炭素を含む原料化合物により燃焼炎を形成
させるのみで基材上にダイヤモンドを析出させることが
可能であり、従来のCVD法に比べ画期的に優れた方法で
あるが実用化のためにはダイヤモンド析出速度のさらな
る増大、均質性の向上や析出物の性状制御が強く望まれ
ている。
This method is capable of depositing diamond on the substrate only by forming a combustion flame with a raw material compound containing carbon, and is a method that is epoch-making superior to the conventional CVD method, but for practical use It is strongly desired to further increase the diamond deposition rate, improve the homogeneity, and control the properties of the diamond.

本件発明はダイヤモンドの析出速度および析出面積を
増加させ、析出物の均質化および量産化を促進すること
を目的とする。
An object of the present invention is to increase the deposition rate and deposition area of diamond, and promote homogenization and mass production of the deposit.

[課題を解決するための手段] 本件発明者は上記の目的を達成するために鋭意研究し
た結果、ダイヤモンド析出用原料化合物を燃焼させるに
際し、函体中で雰囲気、圧力の制御を行ない、不完全燃
焼領域の増加と均質性の増大によって、より広い析出領
域でのダイヤモンドの析出速度が増大し、より均質化し
た良質なダイヤモンドが析出すること、及び粒体又は粉
体である基体の流動により量産化が可能であることを見
出し、本件発明を完成するに至った。
[Means for Solving the Problem] The inventors of the present invention have conducted extensive studies to achieve the above-mentioned object, and as a result, when burning the raw material compound for diamond precipitation, the atmosphere and the pressure were controlled in the box, resulting in incompleteness. Mass production by increasing the combustion area and homogeneity increases the deposition rate of diamond in a wider deposition area, depositing more homogenized and high-quality diamond, and the flow of the base material, which is a granule or powder. The present invention has been completed and the present invention has been completed.

すなわち、本件発明の要旨は炭素を含むダイヤモンド
析出用原料化合物を不完全燃焼領域を有するように燃焼
させて気相法ダイヤモンドを合成する方法において、函
体中で粒体又は粉体であるダイヤモンド析出用基材を流
動させることを特徴とする気相法ダイヤモンドの合成法
にある。
That is, the gist of the present invention is a method of synthesizing a vapor-phase method diamond by burning a diamond-precipitating raw material compound containing carbon so as to have an incomplete combustion region. It is a method for synthesizing a vapor-phase-process diamond, which is characterized by fluidizing a substrate for use.

以下、本発明を詳しく説明する。 Hereinafter, the present invention will be described in detail.

本発明に使用するダイヤモンド合成用炭素源としては
メタン、エタン、プロパン、ブタン等の飽和炭化水素、
エチレン、プロピレン、ブチレン、アセチレン等の不飽
和炭化水素、ベンゼン、スチレン等の芳香族炭化水素、
エチルアルコール等のアルコール類、アセトン等のケト
ン基を含む化合物、ジエチルエーテル等のエーテル類、
その他アルデヒド化合物、含窒素化合物、一酸化炭素等
すべてが使用可能である。又、前述の化合物は1種また
は2種以上を混合して用いることができる。
As the carbon source for diamond synthesis used in the present invention, methane, ethane, propane, saturated hydrocarbons such as butane,
Unsaturated hydrocarbons such as ethylene, propylene, butylene, and acetylene; aromatic hydrocarbons such as benzene and styrene;
Alcohols such as ethyl alcohol, compounds containing a ketone group such as acetone, ethers such as diethyl ether,
Other aldehyde compounds, nitrogen-containing compounds, carbon monoxide and the like can all be used. The above compounds may be used alone or in combination of two or more.

さらに、炭素源として固体の炭素、黒鉛等を前記化合
物と水素、酸素等の混合ガスの燃焼炎中で、気化、燃
焼、水素化等の反応を介して炭素源として用いることも
可能である。又、その際、非酸化性ガスを混合すること
もできる。
Further, it is also possible to use solid carbon, graphite or the like as a carbon source as a carbon source through a reaction such as vaporization, combustion or hydrogenation in a combustion flame of a mixed gas of the above compound and hydrogen, oxygen or the like. At that time, a non-oxidizing gas can be mixed.

これらの炭素含有原料化合物が、燃焼炎中で燃焼熱に
よる分解と更に酸素との反応での分解解離、燃焼により
ラジカル化された活性種から、例えばC,C2,CH,CH2,CH3
などが不完全燃焼領域では豊富でダイヤモンド相を形成
するのを好適ならしめるものと推定される。又、水素原
子、酸素原子も形成され、ダイヤモンド析出反応に関与
しているものと思われる。このようにラジカル化した活
性種及び水素原子、酸素原子の生成及び拡散領域が函体
中の燃焼により雰囲気中の酸素濃度の低減化等の調節が
でき、外炎部の減少または消失がおこり、即ちこれが不
完全燃焼領域の拡大につながり、ダイヤモンド析出面
積、速度の増大、均質化が可能となる。
These carbon-containing raw material compounds are decomposed by combustion heat in a combustion flame and decomposed and dissociated by further reaction with oxygen, from active species radicalized by combustion, for example, C, C 2 , CH, CH 2 , CH 3
It is presumed that such abundance is abundant in the incomplete combustion region, making it suitable for forming a diamond phase. Further, hydrogen atoms and oxygen atoms are also formed, which seems to be involved in the diamond precipitation reaction. In this way, the active species and hydrogen atoms radicalized and the generation and diffusion regions of oxygen atoms can be adjusted such as the reduction of the oxygen concentration in the atmosphere by the combustion in the box, and the reduction or disappearance of the outer flame part occurs, That is, this leads to the expansion of the incomplete combustion region, which enables the diamond deposition area, the velocity to be increased, and the homogenization.

本発明ではさらに函体中で基体を流動させることによ
りダイヤモンド量産化が可能となる。基体が粒体又は粉
体の場合は燃焼炎の炎自体の噴出力により流動床を形成
し、この基体上にダイヤモンドを析出させることができ
る。
In the present invention, mass production of diamond is possible by further flowing the substrate in the box. When the substrate is particles or powder, the jetting force of the flame itself of the combustion flame forms a fluidized bed, and diamond can be deposited on this substrate.

本件発明において例えば、アセチレン、スチレン、プ
ロパン、エチルアルコール、メチルアルコール、ベンゼ
ン等の原料ガスに酸素を添加し、燃焼炎を形成し、酸素
添加量の調整で函体中の雰囲気中含有酸素量を低減して
不完全燃焼領域の体積を制御することが可能である。こ
の場合のアセチレン−酸素炎の不完全燃焼域はアセチレ
ンフェザーと呼ばれており、この体積は酸素/アセチレ
ン比と全ガス量および函体中の雰囲気の圧力、含有酸素
量により変化し、制御可能である。特に酸素/アセチレ
ン比は0.5〜2の範囲を用いることができるが望ましく
は0.75〜1の比である。
In the present invention, for example, by adding oxygen to a raw material gas such as acetylene, styrene, propane, ethyl alcohol, methyl alcohol, and benzene, a combustion flame is formed, and the oxygen content in the atmosphere in the box is adjusted by adjusting the oxygen addition amount. It is possible to reduce and control the volume of the incomplete combustion region. The incomplete combustion zone of the acetylene-oxygen flame in this case is called acetylene feather, and its volume can be controlled by changing with the oxygen / acetylene ratio, the total gas amount, the pressure of the atmosphere in the box, and the oxygen content. Is. In particular, the oxygen / acetylene ratio may be in the range of 0.5 to 2, but is preferably 0.75 to 1.

函体中の圧力は0.1Torr〜10,000Torrで使用でき、望
ましくは10Torr〜760Torr、更に望ましくは100Torr〜75
0Torrである。函体内の圧力が減圧になるに従って炎体
積の増大が起り、それに従ってダイヤ合成領域が拡大す
る。一方、減圧になりすぎると希薄なって炎が消えてし
まうと同時に温度の低下を招く。又、函体中の酸素含有
量は燃焼炎の炎外周部からの拡散酸素により不完全燃焼
領域の体積減少を起こすので重要な因子であるが、函体
の形状、大きさ、燃焼炎の体積や数、さらに流動させる
基体の状態によって異なるので一概には決定できない。
ただ本発明の函体を使用することによって実験によって
容易に決められるので、酸素量の制御によって不完全燃
焼領域の体積制御が可能になる。
The pressure in the box can be used at 0.1 Torr to 10,000 Torr, preferably 10 Torr to 760 Torr, more preferably 100 Torr to 75 Torr.
0 Torr. As the pressure inside the box decreases, the flame volume increases, and the diamond synthesis region expands accordingly. On the other hand, if the pressure is reduced too much, the flame will be extinguished and the temperature will be decreased. Also, the oxygen content in the box is an important factor because it causes the volume of the incomplete combustion region to decrease due to the diffused oxygen from the flame periphery of the combustion flame. The number cannot be determined unconditionally because it depends on the number and the state of the substrate to be fluidized.
However, the volume of the incomplete combustion region can be controlled by controlling the amount of oxygen because it can be easily determined by an experiment by using the box of the present invention.

一般に外炎が存在する燃焼条件下でのアセチレンフェ
ザー領域での温度は2000〜3000℃であり、補助励起手段
を必要としない。このため好ましいダイヤモンド合成温
度である1500℃以上が容易に達成される。基体温度は60
0〜1200℃が適当であり、冷却、熱放散等することによ
り、この基体温度範囲に制御可能である。
Generally, the temperature in the acetylene feather region under combustion conditions where an external flame is present is 2000 to 3000 ° C., and no auxiliary excitation means is required. Therefore, the preferred diamond synthesis temperature of 1500 ° C. or higher is easily achieved. Base temperature is 60
A temperature of 0 to 1200 ° C. is suitable, and it is possible to control within this substrate temperature range by cooling, heat dissipation or the like.

函体内雰囲気中の酸素量の制御により外炎部を消失す
る様な燃焼や函体内圧力が低い場合にダイヤモンド生成
に必要なラジカル発生のための励起エネルギー不足が起
こる場合があるが、この様な場合、必要に応じて補助励
起手段を用い得る。補助加熱源としては通電加熱により
発熱体、高周波誘導加熱、レーザー光による加熱方式、
赤外線加熱、アーク放電による加熱等がある。
Excitation energy shortage may occur due to radical generation necessary for diamond generation when combustion such that the outer flame part disappears due to control of the amount of oxygen in the atmosphere inside the box or when the pressure inside the box is low. In this case, auxiliary excitation means can be used if necessary. As an auxiliary heating source, heating element by electric heating, high frequency induction heating, heating method by laser light,
There are infrared heating, heating by arc discharge, etc.

ダイヤモンド析出用基体は通常低圧CVD法で用いられ
るものが使用できる。即ちSiウェハー、SiC焼結体、SiC
粒状物の外にW,WC,Mo,TiC,TiN,サーメット,超硬合金工
具鋼,合金工具鋼,高速度鋼等の形状物及び粒状物が例
示できる。
As the substrate for diamond deposition, a substrate usually used in a low pressure CVD method can be used. That is, Si wafer, SiC sintered body, SiC
In addition to the granular material, W, WC, Mo, TiC, TiN, cermet, cemented carbide tool steel, alloy tool steel, high speed steel, and other shapes and granular materials can be exemplified.

以下、本発明の1例について図面を用いて説明を行
う。
An example of the present invention will be described below with reference to the drawings.

図1は函体1内に流動装置を有するダイヤモンド合成
装置の概略図である。底部にチャージされた粒体3は燃
焼バーナー2の燃焼炎が形成されると同時にその噴出力
によって流動化する。ダイヤモンドの析出は基体粒体が
燃焼炎内のダイヤモンド合成領域内に滞留している間に
起こる。基体粒体は流動化するため静止状態時のダイヤ
モンド析出表面積の3〜7倍のダイヤモンド析出表面積
がダイヤモンド合成領域に曝され、ダイヤモンド析出に
関与する。又、一定時間の合成後、底部の板状部(粉体
搬出用ハッチ)8を上げて間隙を形成し、合成粉体を採
取できる。又、新たな基材粒体のチャージは燃焼バーナ
ーの火口9付近にある基体送入口(図示せず)により行
う。
FIG. 1 is a schematic view of a diamond synthesizing apparatus having a flow device in a box 1. At the same time as the combustion flame of the combustion burner 2 is formed, the granules 3 charged at the bottom are fluidized by the jetting force thereof. Deposition of diamond occurs while the substrate particles are retained in the diamond synthesis zone within the combustion flame. Since the base particles are fluidized, the diamond precipitation surface area of 3 to 7 times the diamond precipitation surface area in the stationary state is exposed to the diamond synthesis region and participates in the diamond precipitation. After the synthesis for a certain period of time, the bottom plate-shaped portion (powder discharge hatch) 8 is raised to form a gap, and synthetic powder can be collected. Further, new base material particles are charged by a base material inlet (not shown) near the crater 9 of the combustion burner.

尚、図1中4は燃焼用ガスコントロール系、5は圧力
検出器、6は函体内圧力、雰囲気排気系、7は流動化粒
体容器(Mo製)水冷方式(図示せず)である。
In FIG. 1, 4 is a combustion gas control system, 5 is a pressure detector, 6 is the pressure inside the box, an atmosphere exhaust system, and 7 is a fluidized granule container (made of Mo) water cooling system (not shown).

図1の流動化粒体容器7の内径は約100mmφで上部は1
80mmφの開口径である。この流動化容器では燃焼ガス流
量合計2/min〜10/minの範囲であれば基体粒体数μ
m〜数1000μm程度まで流動化が可能である。
The fluidized granule container 7 shown in FIG. 1 has an inner diameter of about 100 mm and an upper part of 1
The opening diameter is 80 mmφ. In this fluidization container, if the total combustion gas flow rate is in the range of 2 / min to 10 / min, the number of base particles is μ
Fluidization is possible from m to several 1000 μm.

[実 施 例] 図1に示す函体装置1(SUS製水冷函体、50)にア
セチレン−酸素用バーナー2を中心より垂直に設定し
た。ダイヤモンド析出用粒状基体3としてSiC粒、平均
粒径約300μmを2.5g、流動化粒体容器7内に入れ500To
rrでArで函体内全体を置換しておき、その後、流動化容
器底から15mmの高さに火口9が設定されたバーナーにア
セチレンガス3.5/min、酸素ガス3.15/minを供給し
て燃焼炎を形成し約90分間SiC粒の流動化とダイヤモン
ド合成を行った。
[Examples] The acetylene-oxygen burner 2 was set vertically from the center in the box device 1 (SUS water-cooled box, 50) shown in FIG. SiC particles, 2.5 g of average particle size of about 300 μm, are placed in the fluidized particle container 7 as the granular substrate 3 for diamond precipitation and 500 To
The whole box was replaced with Ar at rr, and then acetylene gas 3.5 / min and oxygen gas 3.15 / min were supplied to the burner with the crater 9 set at a height of 15 mm from the bottom of the fluidization vessel to burn flame. Then, the SiC particles were fluidized and diamond was synthesized for about 90 minutes.

その後、反応装置内より粒体を採取し、光学顕微鏡観
察を行ない、ダイヤモンド自形を有する数μmの結晶子
が粒全体を被覆していることを確認した。この被覆粒を
顕微ラマン分光法により測定しダイヤモンドピークの13
33cm-1に鋭いピークと1500〜1550cm-1の範囲に非常にブ
ロードな低いi−カーボンを認めたことによりSiC粒は
自形を持ったダイヤモンド結晶に被覆されていることが
判明した。又、被覆厚さは粒の断面を顕微鏡測定したと
ころ、平均28μm程度であった。
After that, the particles were collected from the inside of the reaction apparatus and observed under an optical microscope, and it was confirmed that crystallites having a diamond self-shape of several μm covered the entire particles. The coated grains were measured by microscopic Raman spectroscopy and
SiC grains by very showed a broad low i- carbon in the range of sharp peaks and 1500~1550Cm -1 to 33cm -1 was found to be coated on the diamond crystals having a euhedral. The coating thickness was about 28 μm on average when the cross section of the grain was measured by a microscope.

[発明の効果] 本発明の方法によってダイヤモンド合成が広面積、高
速度で行なうことができ、又ダイヤモンド合成の均質化
に寄与することができる。
[Effects of the Invention] By the method of the present invention, diamond synthesis can be performed in a large area and at a high speed, and can contribute to homogenization of diamond synthesis.

【図面の簡単な説明】[Brief description of the drawings]

図1は本発明に係る方法の1例を示すダイヤモンド合成
装置の概念図である。 1……函体、2……燃焼バーナー 3……基体となる粒体、7……流動化粒体容器
FIG. 1 is a conceptual diagram of a diamond synthesizing apparatus showing an example of the method according to the present invention. 1 ... Box, 2 ... Combustion burner 3 ... Base particle, 7 ... Fluidized particle container

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】炭素を含むダイヤモンド析出用原料化合物
を不完全燃焼領域を有するように燃焼させて気相法ダイ
ヤモンドを合成する方法において、函体中で粒体又は粉
体であるダイヤモンド析出用基材を流動させることを特
徴とする気相法ダイヤモンドの合成法。
1. A method for synthesizing a vapor grown diamond by burning a diamond-containing starting material compound containing carbon so as to have an incomplete combustion region, wherein the diamond-depositing base is a particle or powder in a box. A method for synthesizing a vapor-phase method diamond characterized by flowing a material.
JP9805889A 1989-04-18 1989-04-18 Synthesis method of vapor phase diamond Expired - Fee Related JP2680676B2 (en)

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DE69125118T2 (en) * 1990-12-15 1997-06-19 Fujitsu Ltd Process for the production of a diamond coating

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