JP2678655B2 - Method for manufacturing carrier for fixing semiconductor chip and wafer fixing member - Google Patents
Method for manufacturing carrier for fixing semiconductor chip and wafer fixing memberInfo
- Publication number
- JP2678655B2 JP2678655B2 JP6893989A JP6893989A JP2678655B2 JP 2678655 B2 JP2678655 B2 JP 2678655B2 JP 6893989 A JP6893989 A JP 6893989A JP 6893989 A JP6893989 A JP 6893989A JP 2678655 B2 JP2678655 B2 JP 2678655B2
- Authority
- JP
- Japan
- Prior art keywords
- adhesive layer
- fixing
- sensitive adhesive
- pressure
- holding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、半導体チップ固着キャリヤの製造方法、及
びウエハ固定部材に関する。さらに詳しくは、半導体チ
ップをチップキャリヤに固着するための接着剤を、分断
前の半導体ウエハ予め付設した状態で取り扱うようにし
て製造工程を簡略化したものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor chip fixed carrier and a wafer fixing member. More specifically, the manufacturing process is simplified by handling the adhesive for fixing the semiconductor chip to the chip carrier in a state in which the semiconductor wafer before cutting is attached in advance.
発明の背景 回路パターンが形成された半導体ウエハは、必要に応
じ裏面研摩して厚さ調整したのち、ダイシング工程で素
子小片に分断され、形成された半導体チップは、マウン
ト工程におかれて接着剤を介しチップキャリアに固着さ
れたのち、ボンディング工程に移行される。分断に際し
ては切断屑の除去等のため適度な液圧（通常2kg/cm2程
度）で洗浄することが通例である。BACKGROUND OF THE INVENTION A semiconductor wafer on which a circuit pattern is formed is polished on the back surface as necessary to adjust the thickness, and then divided into element pieces in a dicing process. After being fixed to the chip carrier via, the process proceeds to the bonding process. When cutting, it is customary to wash with moderate fluid pressure (usually about 2 kg / cm 2 ) to remove cutting chips.
前記において、チップキャリヤに接着剤を付設し、そ
の接着剤を介して半導体チップを固着するこれまでの方
法では、接着剤層の厚さを均一にすることが困難であっ
たり、接着剤の付設に特殊な装置を要したり、また付設
に長時間を要したりするため、半導体チップに分断する
前の半導体ウエハに予め固着用の接着剤を設ける方法が
試みられている。In the above method, it is difficult to make the thickness of the adhesive layer uniform or it is difficult to make the adhesive layer uniform by the conventional method of attaching the adhesive to the chip carrier and fixing the semiconductor chip through the adhesive. In order to require a special device or a long time for attachment, an attempt has been made to provide an adhesive for fixing to a semiconductor wafer before it is divided into semiconductor chips.
従来の技術 従来、前記の方法として、支持基材の上に導電性接着
剤層を剥離可能に付設した固定部材を用い、先ずその接
着剤層に半導体ウエハを接着保持させ、その半導体ウエ
ハに溝を設けて割り、素子小片に分断する。次に、支持
基材を延伸して、形成された半導体チップを導電性接着
剤層と共に一括剥離し、落下散在した半導体チップを個
々に拾い上げつつ、その導電性接着剤層を介してチップ
キャリヤに固着する方法が提案されている（特開昭60−
57642号公報、同60−182200号公報）。従ってこの方法
では、固定部材がダイシング工程において半導体ウエハ
を接着保持する役割も兼ねており、工程が簡略な利点を
有している。2. Description of the Related Art Conventionally, as the above-mentioned method, a fixing member in which a conductive adhesive layer is releasably attached on a supporting substrate is used. First, a semiconductor wafer is bonded and held on the adhesive layer, and a groove is formed in the semiconductor wafer. Is provided to divide the element into small pieces. Next, the supporting base material is stretched, the formed semiconductor chips are separated together with the conductive adhesive layer, and the scattered semiconductor chips are individually picked up, and the semiconductor chips are transferred to the chip carrier via the conductive adhesive layer. A method of fixing has been proposed (JP-A-60-
57642 and 60-182200). Therefore, in this method, the fixing member also has a role of adhering and holding the semiconductor wafer in the dicing process, and has an advantage that the process is simple.
発明が解決しようとする課題 しかしながら、支持基材と導電性接着剤層との接着力
を調整することが困難な問題点があった。すなわち、半
導体ウエハを素子小片に分断する点よりは、分断時に支
持基材と導電性接着剤層とが層間剥離して分断不能や分
断寸法ミス等の事態が生じないよう、その剥がし力に耐
える強い保持力が要求される反面、形成された半導体チ
ップを導電性接着剤層と共に支持基材より剥離する点よ
りは、弱い接着力であることが要求される。そのため、
これらの背反する要求がバランスするよう支持基材と導
電性接着剤層との接着力を調整する必要があるか、その
調整が困難な問題点があった。半導体ウエハの全厚さを
回転丸刃等で切断する方式などのように、大きい保持力
が要求される場合に適用できるものを得ることは特に困
難であった。However, there is a problem that it is difficult to adjust the adhesive force between the supporting base material and the conductive adhesive layer. That is, from the point of dividing the semiconductor wafer into element pieces, the peeling force is endured so that the supporting base material and the conductive adhesive layer do not peel off during the cutting to cause delamination or an error in the cutting dimension. While a strong holding force is required, a weak adhesive force is required rather than peeling the formed semiconductor chip together with the conductive adhesive layer from the supporting base material. for that reason,
There is a problem in that it is necessary or difficult to adjust the adhesive force between the supporting base material and the conductive adhesive layer so as to balance these contradictory requirements. It was particularly difficult to obtain a semiconductor wafer that can be applied when a large holding force is required, such as a method in which the entire thickness of a semiconductor wafer is cut with a rotary round blade or the like.
課題を解決するための手段 本発明は、感圧接着層を介した保持方式とし、その感
圧接着層をチップ固着用の接着剤層より容易に剥離でき
るようにして、上記の課題を克服したものである。Means for Solving the Problems The present invention overcomes the above-mentioned problems by adopting a holding system via a pressure-sensitive adhesive layer, and enabling the pressure-sensitive adhesive layer to be easily peeled off from an adhesive layer for chip fixation. It is a thing.
すなわち、本発明は、支持基材に設けた保持用感圧接
着層の上に、固着用接着剤層を介し半導体ウエハを接着
固定して素子小片に分断する工程、形成した半導体チッ
プを固着用接着剤層と共に保持用感圧接着層より剥離す
る工程、剥離した半導体チップをその固着用接着剤層を
介しチップキャリヤに固着する工程からなることを特徴
とする半導体チップ固着キャリヤの製造方法、及び 支持基材の上に、素子小片に分断する半導体ウエハを
支持するための保持用感圧接着層を有し、そのその保持
用感圧接着層の上に、分断形成した半導体チップをチッ
プキャリヤに固着するための固着用接着剤層有してな
り、その保持用感圧接着層と固着用接着剤層とが剥離可
能に形成されていることを特徴とするウエハ固定部材を
提供するものである。That is, according to the present invention, a step of adhering and fixing a semiconductor wafer on a pressure-sensitive adhesive layer for holding provided on a supporting base material via an adhesive layer for adhering to divide it into element pieces, and fixing the formed semiconductor chip A method for manufacturing a semiconductor chip fixed carrier, comprising: a step of peeling from the holding pressure-sensitive adhesive layer together with an adhesive layer; and a step of fixing the peeled semiconductor chip to a chip carrier via the fixing adhesive layer, and A supporting pressure-sensitive adhesive layer for supporting a semiconductor wafer to be divided into small pieces is provided on a supporting substrate, and the semiconductor chip formed by dividing the chip is used as a chip carrier on the holding pressure-sensitive adhesive layer. A wafer fixing member comprising a fixing adhesive layer for fixing, and the holding pressure-sensitive adhesive layer and the fixing adhesive layer being formed so as to be peelable. .
作 用 支持基材とチップ固着用の接着剤層との間に保持用感
圧接着層を、該接着剤層に対し剥離可能に介在させるこ
とにより、分断時に半導体ウエハを保持させる際の接着
力と、分断形成された半導体チップを固着用接着剤層と
共に剥離する際の接着力とを実質的に他に影響されない
で独自に設定することができる。その結果、分断時にお
いては充分な力で半導体ウエハを保持することができ、
また剥離時においては半導体チップを固着用接着剤層と
共にスムースに離去することができる。The pressure-sensitive adhesive layer for holding is interposed between the supporting substrate for working and the adhesive layer for fixing the chip so that it can be peeled off from the adhesive layer, so that the adhesive force when holding the semiconductor wafer at the time of cutting In addition, the adhesive force when peeling the divided semiconductor chip together with the adhesive layer for fixing can be set independently without being substantially affected by other factors. As a result, the semiconductor wafer can be held with sufficient force at the time of division,
Further, at the time of peeling, the semiconductor chip can be smoothly separated together with the fixing adhesive layer.
実施例 第１図に例示したように、本発明の方法において半導
体ウエハの素子小片への分断は、半導体ウエハ１が固着
用接着剤層２と接着され、その固着用接着剤層２が保持
用感圧接着層３を介し支持基材４に固定された状態で行
われる。EXAMPLE As illustrated in FIG. 1, in the method of the present invention, the semiconductor wafer 1 is divided into the element pieces by bonding the semiconductor wafer 1 to the adhesive layer 2 for fixing, and the adhesive layer 2 for holding is used for holding. It is performed in a state of being fixed to the supporting base material 4 via the pressure-sensitive adhesive layer 3.
その状態の形成方式は任意である。例えば、半導体ウ
エハに固着用接着剤層を設け、支持基材に保持用感圧接
着層を設けてその固着用接着剤層と保持用感圧接着層と
を接着する方式などにより形成してもよい。前記状態の
好ましい形成方式は、予め支持基材の上に保持用感圧接
着層と固着用接着剤層を順次設けてなるウエハ固定部材
を用いる方式である。第３図にウエハ固定部材の構成例
を示した。４が支持基材、３が保持用感圧接着層、２が
固着用接着剤層である。なお、５は半導体ウエハを接着
するまでの間、固着用接着剤層２を被覆保護するセパレ
ータである。セパレータは必要に応じて設けられる。固
着用接着剤層は連続面として形成されていてもよいし、
半導体ウエハの平面形態、ないし配置間隔に対応させて
パターン状態に形成されてもよい。The method of forming the state is arbitrary. For example, it may be formed by a method in which a fixing adhesive layer is provided on a semiconductor wafer, a holding pressure-sensitive adhesive layer is provided on a supporting substrate, and the fixing adhesive layer and the holding pressure-sensitive adhesive layer are adhered. Good. A preferable forming method in the above state is a method using a wafer fixing member in which a holding pressure-sensitive adhesive layer and a fixing adhesive layer are sequentially provided on a supporting base material in advance. FIG. 3 shows an example of the structure of the wafer fixing member. Reference numeral 4 is a supporting substrate, 3 is a pressure-sensitive adhesive layer for holding, and 2 is an adhesive layer for fixing. Reference numeral 5 is a separator that covers and protects the adhesive layer 2 for fixing until the semiconductor wafer is bonded. The separator is provided as needed. The adhesive layer for fixing may be formed as a continuous surface,
It may be formed in a pattern corresponding to the planar shape of the semiconductor wafer or the arrangement interval.
接着固定した半導体ウエハ１を分断する方式について
は特に限定はない。半導体ウエハに溝を設けて割る方式
でもよい。本発明では、半導体ウエハの全厚さにわたり
回転丸刃等で切断する方式を採ることも可能である。そ
の場合、第２図のように固着用接着剤層２の全厚さを含
めて切れ目11を入れる方式が、後続の半導体チップの個
別剥離に有利である。なお支持基材４は、分断しないで
一体物として残存させておくことが取り扱いを容易とす
るうえで有利である。その際、支持基材４の一部に切り
込み溝が入る程度は許容される。前記の半導体ウエハの
全厚さを切断する方式は、得られる半導体チップが寸法
精度に優れる利点がある。There is no particular limitation on the method of dividing the semiconductor wafer 1 that is adhesively fixed. A method in which a groove is provided in the semiconductor wafer and the semiconductor wafer is broken may be used. In the present invention, it is possible to adopt a method of cutting the entire thickness of the semiconductor wafer with a rotary round blade or the like. In that case, as shown in FIG. 2, the method of forming the cut 11 including the entire thickness of the adhesive layer 2 for fixing is advantageous for individual peeling of the subsequent semiconductor chip. In addition, it is advantageous that the support base material 4 is left as an integrated body without being divided, for easy handling. At this time, it is permissible that a cut groove is formed in a part of the supporting base material 4. The method of cutting the entire thickness of the semiconductor wafer has an advantage that the obtained semiconductor chip has excellent dimensional accuracy.
本発明の方法において分断工程を経て形成された半導
体チップは、固着用接着剤層と共に保持用感圧接着層よ
り剥離され、その固着用接着剤層を介しチップキャリヤ
に固着される。The semiconductor chip formed through the dividing step in the method of the present invention is separated from the pressure-sensitive adhesive layer for holding together with the adhesive layer for fixing, and is fixed to the chip carrier via the adhesive layer for fixing.
半導体チップを固着用接着剤層と共に剥離し、チップ
キャリヤにマウントする方式は任意である。例えば、支
持基材を延伸して半導体チップを一括剥離して落下させ
たのち、真空チャックで個々に拾い上げてマウントする
方式などでもよい。好ましい方式は、切断分離した素子
小片をそのまま保持用感圧接着層に支持せた状態で個々
のチップをニードル等で突き上げ、真空チャックで吸着
してピックアップし、その保持下に移動させてマウント
する方式などのように、同じ保持手段を介して個々の半
導体チップについて剥離とマウントを一連に行う方式で
ある。この場合、形成した半導体チップの任意の散在を
防止できる利点がある。The method of peeling the semiconductor chip together with the adhesive layer for fixing and mounting it on the chip carrier is arbitrary. For example, a method may be adopted in which the supporting base material is stretched, the semiconductor chips are collectively peeled and dropped, and then picked up individually by a vacuum chuck and mounted. A preferred method is to push individual chips up with a needle or the like while the cut and separated element pieces are supported as they are on the pressure-sensitive adhesive layer for holding, adsorb with a vacuum chuck to pick up, and move them under the holding to mount them. As in the method, a method of performing peeling and mounting for individual semiconductor chips in series through the same holding means. In this case, there is an advantage that the formed semiconductor chips can be prevented from being scattered arbitrarily.
本発明の方法、ないしウエハ固定部材においては、半
導体チップを固着用接着剤層と共に剥離するため、保持
用感圧接着層と固着用接着剤層とは剥離可能に形成され
る。In the method or wafer fixing member of the present invention, the semiconductor chip is peeled off together with the fixing adhesive layer, so that the holding pressure-sensitive adhesive layer and the fixing adhesive layer are formed so as to be peelable.
剥離を可能とする方式については特に限定はなく、剥
離工程において保持用感圧接着層と固着用接着剤層と接
着力を低下、ないし喪失させうる方式であればよい。そ
の例としては、保持用感圧接着層の硬化方式、発泡方式
ないし加熱膨脹方式、ブルーミング方式、保持用感圧接
着層ないし固着用接着剤層の冷却方式、保持用感圧接着
層と固着用接着剤層との間に加熱処理で作用する接着力
低減層を介在させる方式などがあげられる。本発明では
これらの方式を適宜に組み合わせて適用してもよい。There is no particular limitation on the method that enables peeling, and any method that can reduce or lose the adhesive force between the holding pressure-sensitive adhesive layer and the fixing adhesive layer in the peeling step may be used. Examples include pressure-sensitive adhesive layer for holding, curing method, foaming method or heat expansion method, blooming method, pressure-sensitive adhesive layer for holding or fixing adhesive layer cooling method, pressure-sensitive adhesive layer for holding and fixing Examples include a method of interposing an adhesive force reduction layer that acts by heat treatment with the adhesive layer. In the present invention, these methods may be appropriately combined and applied.
前記した保持用感圧接着層の硬化方式は、架橋度を増
大させて接着力を低下させるもので、その形成は紫外線
硬化型や加熱硬化型などの感圧接着剤を用いることによ
り行うことができる。The above-mentioned curing method of the pressure-sensitive adhesive layer for holding is to increase the degree of cross-linking and reduce the adhesive force, and the formation thereof can be performed by using a pressure-sensitive adhesive such as an ultraviolet curable type or a heat curable type. it can.
紫外線硬化型の感圧接着剤の代表例としては、不飽和
結合を２個以上有する付加重合性化合物やエポキシ基を
有するアルコキシシランの如き光重合性化合物と、カル
ボニル化合物や有機硫黄化合物、過酸化物、アミン、オ
ニウム塩系化合物の如き光重合開始剤を配合したゴム系
感圧接着剤や、アクリル系感圧接着剤などがあげられる
（特開昭60−196956号公報）。光重合性化合物、光重合
開始剤の配合量は、それぞれベースポリマ100重量部あ
たり10〜500重量部、0.1〜20重量部が一般的である。な
お、アクリル系ポリマには、通例のもの（特公昭57−54
068号公報、特公昭58−33909号公報等）のほか、側鎖に
ラジカル反応性不飽和基を有するもの（特公昭61−5626
4号公報）や、分子中にエポキシ基を有するものなども
用いうる。また、不飽和結合を２個以上有する付加重合
性化合物としては、例えばアクリル酸やメタクリル酸の
多価アルコール系エステルやオリゴエステル、エポキシ
系やウレタン系化合物などがあげられる。さらに、エチ
レングリコールジグリシジルエーテルの如き分子中にエ
ポキシ基を１個又は２個以上有するエポキシ基官能性架
橋剤を追加配合して架橋効率を上げることもできる。紫
外線硬化型の保持用感圧接着層を形成する場合には紫外
線照射処理を可能とすべく支持基材には透明なフィルム
等が用いられる。Representative examples of UV-curable pressure-sensitive adhesives include addition-polymerizable compounds having two or more unsaturated bonds, photopolymerizable compounds such as alkoxysilanes having epoxy groups, carbonyl compounds, organic sulfur compounds, and peroxides. Pressure-sensitive adhesives and acrylic pressure-sensitive adhesives containing a photopolymerization initiator such as a compound, an amine or an onium salt-based compound (JP-A-60-196956). The compounding amounts of the photopolymerizable compound and the photopolymerization initiator are generally 10 to 500 parts by weight and 0.1 to 20 parts by weight, respectively, per 100 parts by weight of the base polymer. Acrylic polymers are commonly used (Japanese Patent Publication No. 57-54
No. 068, Japanese Patent Publication No. 58-33909, etc.) and those having a radical-reactive unsaturated group in the side chain (Japanese Patent Publication No. 61-5626).
No. 4), or those having an epoxy group in the molecule. Examples of the addition polymerizable compound having two or more unsaturated bonds include polyhydric alcohol esters and oligoesters of acrylic acid and methacrylic acid, and epoxy and urethane compounds. Further, an epoxy group-functional crosslinking agent having one or more epoxy groups in the molecule such as ethylene glycol diglycidyl ether may be additionally compounded to increase the crosslinking efficiency. In the case of forming an ultraviolet curable pressure-sensitive adhesive layer for holding, a transparent film or the like is used as the supporting base material so that the ultraviolet irradiation treatment can be performed.
加熱架橋型の感圧接着剤の代表例としては、ポリイソ
シアネート、メラミン樹脂、アミン−エポキシ樹脂、過
酸化物、金属キレート化合物の如き架橋剤や、必要に応
じジビニルベンゼン、エチレングリコールジアクリレー
ト、トリメチロールプロパントリメタクリレートの如き
多官能性化合物からなる架橋調節剤などを配合したゴム
系感圧接着剤やアクリル系感圧接着剤などがあげられ
る。Typical examples of heat-crosslinking pressure-sensitive adhesives include polyisocyanates, melamine resins, amine-epoxy resins, peroxides, crosslinking agents such as metal chelate compounds, and if necessary, divinylbenzene, ethylene glycol diacrylate, and triethylbenzene. Examples thereof include a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a cross-linking regulator composed of a polyfunctional compound such as methylolpropane trimethacrylate.
保持用感圧接着層の発泡方式、ないし加熱膨脹方式
は、加熱処理で保持用感圧接着層を発泡構造とすること
により、あるいは当該層の膨脹下に表面を凹凸構造とす
ることにより、接着面積を減少させて接着力を低下させ
るもので、その形式は保持用感圧接着層に発泡剤、ない
し加熱膨脹剤を含有させることにより行うことができ
る。前記した硬化方式との併用は、接着力の低下に特に
有効である。The foaming method or heat expansion method of the pressure-sensitive adhesive layer for holding is performed by heat-treating the pressure-sensitive adhesive layer for holding to have a foamed structure, or by making the surface have an uneven structure while the layer is expanded. The area is reduced to lower the adhesive strength, and this can be done by incorporating a foaming agent or a heat-expanding agent into the holding pressure-sensitive adhesive layer. The combined use with the above-mentioned curing method is particularly effective in reducing the adhesive strength.
発泡剤としては、例えば炭酸アンモニウムやアジド類
の如き無機系発泡剤、アゾ系化合物やヒドラジン系化合
物、セミカルバジド系化合物、トリアゾール系化合物、
Ｎ−ニトロソ系化合物の如き有機系発泡剤など、公知物
を用いてよい。加熱膨脹剤としても、例えばガス等を封
入したマイクロカプセルなど、公知物を用いてもよい。
前記のマイクロカプセルは、発泡剤としても用いること
ができて、前記した膨脹による表面凹凸構造とするか発
泡による発泡構造とするかを制御することができ、また
感圧接着剤中に容易に分散させることができて好ましく
用いうる。発泡剤、なしい加熱膨脹剤の使用量は、ベー
スポリマ100重量部あたり３〜300重量部が一般的であ
る。Examples of the foaming agent include inorganic foaming agents such as ammonium carbonate and azides, azo compounds and hydrazine compounds, semicarbazide compounds, triazole compounds,
Known substances such as an organic foaming agent such as an N-nitroso compound may be used. As the heat-expanding agent, known materials such as microcapsules enclosing gas or the like may be used.
The microcapsules can also be used as a foaming agent, and can control whether the surface uneven structure due to the expansion or the foam structure due to foaming is controlled, and the microcapsules can be easily dispersed in a pressure-sensitive adhesive. And can be preferably used. The amount of the foaming agent or the heat-expanding agent used is generally 3 to 300 parts by weight per 100 parts by weight of the base polymer.
保持用感圧接着層のブルーミング方式は、加熱処理で
の固着用接着剤層との界面にブルーミング剤を活発に析
出させて接着力を低下させるもので、その形成は保持用
感圧接着層にブルーミング剤を含有させることにより行
うことができる。用いるブルーミング剤は、固着用接着
剤層との界面における接着力を低下させるものであれば
よく、一般には界面活性剤やシリコーン組成物、パラフ
ィンやワックス等の低融点物質などが用いられる。有機
溶剤や水等の液体もマイクロカプセル化して用いること
ができる。界面活性剤の使用は、帯電防止能を付与しう
る利点などもある。ブルーミング剤の使用量は、ベース
ホリマ100重量部あたり10〜300重量部が一般的である。The blooming method of the pressure-sensitive adhesive layer for holding is to actively deposit the blooming agent at the interface with the adhesive layer for fixing during heat treatment to reduce the adhesive force, and its formation is performed on the pressure-sensitive adhesive layer for holding. It can be performed by including a blooming agent. The blooming agent to be used may be one that reduces the adhesive force at the interface with the adhesive layer for fixing, and generally, a surfactant, a silicone composition, a low melting point substance such as paraffin or wax, etc. are used. A liquid such as an organic solvent or water can also be microencapsulated and used. The use of a surfactant also has an advantage that antistatic ability can be imparted. The amount of the blooming agent used is generally 10 to 300 parts by weight per 100 parts by weight of the base Holima.
保持用感圧接着層ないし固着用接着剤層の冷却方式
は、低温化により接着力を低下させるもので、冷却温度
は−30℃程度までが一般的である。冷却方式は、他の方
式を適用したあとに適用することもできる。The cooling system for the pressure-sensitive adhesive layer for holding or the adhesive layer for fixing lowers the adhesive force by lowering the temperature, and the cooling temperature is generally up to about -30 ° C. The cooling method can be applied after applying another method.
加熱処理で作用する接着力低減層を介在させる方式
は、第４図のように、固着用接着剤層２と保持用感圧接
着層３との間に、接着力低減層６を固形層として設け、
加熱処理により、接着力低減層６を変化させて当該界面
の接着力を低減させるものである。接着力低減層の形成
には、前記のマイクロカプセル化した発泡剤、ないし加
熱膨脹剤やブルーミング剤のほか、加熱処理で軟化、な
いし流動体化するパラフィンやワックス等の低融点物質
も用いうる。接着力低減層は、保持用感圧接着層等の面
上に部分塗布やパターン塗布した状態のものとして形成
してもよく、固着用接着剤層と保持用感圧接着層との界
面の全面を占有する必要はない。As shown in FIG. 4, the method of interposing the adhesion reducing layer acting by the heat treatment is such that the adhesion reducing layer 6 is a solid layer between the fixing adhesive layer 2 and the holding pressure-sensitive adhesive layer 3. Provided,
The heat treatment changes the adhesive force reduction layer 6 to reduce the adhesive force at the interface. In addition to the above-mentioned microencapsulated foaming agent, heat expansion agent or blooming agent, a low melting point material such as paraffin or wax that softens or becomes fluid by heat treatment can be used for forming the adhesion reducing layer. The adhesive strength reduction layer may be formed by partial coating or pattern coating on the surface of the holding pressure-sensitive adhesive layer or the like, and the entire interface between the fixing adhesive layer and the holding pressure-sensitive adhesive layer. Need not occupy.
本発明において、保持用感圧接着層の厚さは１〜100
μｍ、就中１〜40μｍが適当である。また、固着用接着
剤層の厚さは１〜100μｍが適当である。In the present invention, the pressure-sensitive adhesive layer for holding has a thickness of 1 to 100.
μm, especially 1 to 40 μm is suitable. Further, the thickness of the adhesive layer for fixing is appropriately 1 to 100 μm.
固着用接着剤層の形成には、熱可塑性樹脂や熱硬化性
樹脂からなる適宜な接着剤を用いてよい。一般には、エ
チレン・酢酸ビニル共重合体、エチレン・アクリル酸エ
ステル共重合体、ポリエチレン、ポリプロピレン、ポリ
アミド、ポリエステル、ポリカーボネート、セルロース
誘導体、ポリビニルアセタール、ポリビニルエーテル、
ポリウレタン、フェノキシ樹脂の如き熱可塑性樹脂から
なるホットメルト型接着剤、エポキシ樹脂、ポリイミド
樹脂、マレイミド樹脂、シリコーン樹脂、フェノール樹
脂の如き熱硬化性樹脂を用いた接着剤、その他アクリル
樹脂、ゴム系ポリマ、フッ素ゴム系ポリマ、フッ素樹脂
などからなる接着剤も用いられる。熱硬化性樹脂系接着
剤による固着用接着剤層は、Ｂステージ状態として形成
される。固着用接着剤層に、例えばアルミニウム、銅、
銀、金、パラジウム、カーボンの如き導電性物質からな
る微粉末を含有させて導電性を付与してもよい。また、
アルミナの如き熱伝導性物質からなる微粉末を含有させ
て熱伝導性を高めてもよい。An appropriate adhesive made of a thermoplastic resin or a thermosetting resin may be used to form the fixing adhesive layer. Generally, ethylene / vinyl acetate copolymer, ethylene / acrylic acid ester copolymer, polyethylene, polypropylene, polyamide, polyester, polycarbonate, cellulose derivative, polyvinyl acetal, polyvinyl ether,
Hot melt type adhesives made of thermoplastic resins such as polyurethane and phenoxy resin, epoxy resins, polyimide resins, maleimide resins, silicone resins, adhesives using thermosetting resins such as phenolic resins, other acrylic resins, rubber polymers An adhesive made of fluororubber polymer, fluororesin, or the like is also used. The adhesive layer for fixing with the thermosetting resin adhesive is formed in the B stage state. For the adhesive layer for fixing, for example, aluminum, copper,
Conductivity may be imparted by incorporating fine powder made of a conductive substance such as silver, gold, palladium, or carbon. Also,
The thermal conductivity may be increased by including a fine powder made of a thermally conductive substance such as alumina.
本発明では、保持用接着層と固着用接着剤層との接着
力が、180度ピール値（常温、引張速度300mm/分）に基
づき、半導体ウエハの分断時において200g/20mm以上、
形成された半導体チップの剥離時において150g/20mm以
下となるよう、保持用感圧接着層、ないし固着用接着剤
層を調製したものが、分断時の保持力、剥離時の剥離容
易性などの点より好ましい。In the present invention, the adhesive force between the adhesive layer for holding and the adhesive layer for fixing is 180 degree peel value (normal temperature, pulling speed 300 mm / min), at the time of dividing the semiconductor wafer, 200 g / 20 mm or more,
The prepared pressure-sensitive adhesive layer for holding or the adhesive layer for fixing is 150 g / 20 mm or less at the time of peeling the formed semiconductor chip, the holding force at the time of cutting, the ease of peeling at the time of peeling, etc. It is preferable from the point.
支持基材としては、一般にポリプロピレン、ポリエチ
レン、ポリエステル、ポリカーボネート、エチレン・酢
酸ビニル共重合体、エチレン・プロピレン共重合体、エ
チレン・エチルアクリレート共重合体、ポリ塩化ビニル
の如きプラスチックからなるフィルムや、金属箔などが
用いられる。帯電防止能を有するプラスチック系の支持
基材は、導電性物質、例えば金属、合金、その酸化物な
どからなる厚さ30〜500Åの蒸着層を有するフィルム
や、このフィルムのラミネート体などとして得ることが
できる。支持基材の厚さは５〜200μｍ、就中10〜100μ
ｍが一般的である。As the supporting substrate, generally, a film made of a plastic such as polypropylene, polyethylene, polyester, polycarbonate, ethylene / vinyl acetate copolymer, ethylene / propylene copolymer, ethylene / ethyl acrylate copolymer, or polyvinyl chloride, or a metal. Foil or the like is used. A plastic base material having antistatic ability should be obtained as a film having a vapor-deposition layer having a thickness of 30 to 500Å and made of a conductive substance such as a metal, an alloy, or an oxide thereof, or a laminate of this film. You can The thickness of the supporting substrate is 5-200 μm, especially 10-100 μm
m is common.
本発明の方法において半導体チップ固着キャリヤの製
造は、例えばホットメルト型接着剤の場合の加熱融着処
理や、Ｂステージ状態の熱硬化性樹脂系接着剤の場合の
硬化処理など、その固着用接着剤層に応じた適宜な接着
処理で、チップキャリヤにマウントした半導体チップを
固着処理することにより完了する。形成された半導体チ
ップ固着キャリヤは通常、ボンディング工程等の後続工
程へと導かれる。In the method of the present invention, the semiconductor chip fixing carrier is manufactured by, for example, heat fusion treatment in the case of a hot-melt type adhesive or curing treatment in the case of a thermosetting resin adhesive in the B stage state. This is completed by fixing the semiconductor chip mounted on the chip carrier by an appropriate bonding process according to the agent layer. The formed semiconductor chip fixed carrier is usually guided to a subsequent process such as a bonding process.
発明の効果 本発明によれば、保持用感圧接着層の上に剥離可能に
設けた固着用接着剤層を介して半導体ウエハを接着する
ようにしたので、素子小片への分断時に半導体ウエハを
充分な保持力で固定することができると共に、形成した
半導体チップを固着用接着剤層と共にスムースに剥離す
ることができ、その固着用接着剤層をチップキャリヤへ
の固着にそのまま利用することができる。EFFECTS OF THE INVENTION According to the present invention, the semiconductor wafer is adhered via the adhesive layer for fixing which is detachably provided on the pressure-sensitive adhesive layer for holding. It can be fixed with sufficient holding power, and the formed semiconductor chip can be smoothly peeled off together with the adhesive layer for fixing, and the adhesive layer for fixing can be directly used for fixing to the chip carrier. .
第１図は半導体ウエハを接着固定した状態の断面図、第
２図は半導体ウエハを分断した状態の断面図、第３図は
ウエハ固定部材の構成例を示した断面図、第４図はウエ
ハ固定部材の他の構成例を示した断面図である。 1:半導体ウエハ 2:固着用接着剤層 3:保持用感圧接着層 4:支持基材 5:セパレータ 6:接着力低減層FIG. 1 is a sectional view showing a state where a semiconductor wafer is bonded and fixed, FIG. 2 is a sectional view showing a state where a semiconductor wafer is cut, FIG. 3 is a sectional view showing a configuration example of a wafer fixing member, and FIG. 4 is a wafer. It is sectional drawing which showed the other structural example of a fixing member. 1: Semiconductor wafer 2: Adhesive adhesive layer 3: Holding pressure-sensitive adhesive layer 4: Supporting substrate 5: Separator 6: Adhesion reduction layer
Claims (13)
に、固着用接着剤層を介し半導体ウエハを接着固定して
素子小片に分断する工程、形成した半導体チップを固着
用接着剤層と共に保持用感圧接着層より剥離する工程、
剥離した半導体チップをその固着用接着剤層を介しチッ
プキャリヤに固着する工程からなることを特徴とする半
導体チップ固着キャリヤの製造方法。1. A step of adhering and fixing a semiconductor wafer onto a pressure-sensitive adhesive layer for holding provided on a supporting base material via an adhesive layer for adhering to divide it into element pieces, and adhering the formed semiconductor chip for adhering for adhering. A step of peeling from the pressure-sensitive adhesive layer for holding together with the agent layer,
A method of manufacturing a semiconductor chip fixed carrier, comprising the step of fixing the peeled semiconductor chip to the chip carrier via the fixing adhesive layer.
ハ及び固着用接着剤層の全厚さにわたり切れ目を入れる
請求項１に記載の製造方法。2. The manufacturing method according to claim 1, wherein in the dividing step, a cut is made over at least the entire thickness of the semiconductor wafer and the adhesive layer for fixing.
着剤層と共に半導体チップを剥離する処理と、剥離した
半導体チップをチップキャリヤにマウントする処理を、
同じ保持手段を介して個々の半導体チップについて一連
に行う請求項２に記載の製造方法。3. In the peeling step and the fixing step, a step of peeling the semiconductor chip together with the adhesive layer for fixing and a step of mounting the peeled semiconductor chip on a chip carrier are performed.
The manufacturing method according to claim 2, wherein a series of steps is performed on individual semiconductor chips through the same holding means.
体ウエハを支持するための保持用感圧接着層を有し、そ
の保持用感圧接着層の上に、分断形成した半導体チップ
をチップキャリヤに固着するための固着用接着剤層を有
してなり、その保持用感圧接着層と固着用接着剤層とが
剥離可能に形成されていることを特徴とするウエハ固定
部材。4. A semiconductor chip having a holding pressure-sensitive adhesive layer for supporting a semiconductor wafer to be divided into small pieces on a supporting base material, and the dividing pressure-formed adhesive layer being formed on the holding pressure-sensitive adhesive layer. A wafer fixing member, comprising a fixing adhesive layer for fixing the above to a chip carrier, and the holding pressure-sensitive adhesive layer and the fixing adhesive layer are formed so as to be peelable.
に記載のウエハ固定部材。5. The supporting substrate comprises a transparent film.
The wafer fixing member according to [4].
着剤からなる請求項５に記載のウエハ固定部材。6. The wafer fixing member according to claim 5, wherein the pressure-sensitive adhesive layer for holding is made of a UV-curable pressure-sensitive adhesive.
剤からなる請求項４に記載のウエハ固定部材。7. The wafer fixing member according to claim 4, wherein the holding pressure-sensitive adhesive layer is made of a heat-curable pressure-sensitive adhesive.
脹剤を含有する請求項４に記載のウエハ固定部材。8. The wafer fixing member according to claim 4, wherein the holding pressure-sensitive adhesive layer contains a foaming agent or a heat expansion agent.
を含有する請求項４に記載のウエハ固定部材。9. The wafer fixing member according to claim 4, wherein the holding pressure-sensitive adhesive layer contains a heating type blooming agent.
間に加熱処理で作用する接着力低減層を有する請求項４
に記載のウエハ固定部材。10. An adhesive force reduction layer acting by heat treatment between the holding pressure-sensitive adhesive layer and the fixing adhesive layer.
The wafer fixing member according to item 4.
からなる請求項４に記載のウエハ固定部材。11. The wafer fixing member according to claim 4, wherein the fixing adhesive layer is made of a hot melt type adhesive.
剤からなる請求項４に記載のウエハ固定部材。12. The wafer fixing member according to claim 4, wherein the fixing adhesive layer is made of an adhesive in a B stage state.
ある請求項４に記載のウエハ固定部材。13. The wafer fixing member according to claim 4, wherein the fixing adhesive layer has conductivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6893989A JP2678655B2 (en) | 1989-03-20 | 1989-03-20 | Method for manufacturing carrier for fixing semiconductor chip and wafer fixing member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6893989A JP2678655B2 (en) | 1989-03-20 | 1989-03-20 | Method for manufacturing carrier for fixing semiconductor chip and wafer fixing member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02248064A JPH02248064A (en) | 1990-10-03 |
| JP2678655B2 true JP2678655B2 (en) | 1997-11-17 |
Family
ID=13388139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6893989A Expired - Lifetime JP2678655B2 (en) | 1989-03-20 | 1989-03-20 | Method for manufacturing carrier for fixing semiconductor chip and wafer fixing member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2678655B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9327418B2 (en) | 2011-09-16 | 2016-05-03 | Hitachi Chemical Company, Ltd. | Adhesive film |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| US9327418B2 (en) | 2011-09-16 | 2016-05-03 | Hitachi Chemical Company, Ltd. | Adhesive film |
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