JPH02248064A - Manufacture of semiconductor chip fixed carrier and wafer fixing member - Google Patents
Manufacture of semiconductor chip fixed carrier and wafer fixing memberInfo
- Publication number
- JPH02248064A JPH02248064A JP1068939A JP6893989A JPH02248064A JP H02248064 A JPH02248064 A JP H02248064A JP 1068939 A JP1068939 A JP 1068939A JP 6893989 A JP6893989 A JP 6893989A JP H02248064 A JPH02248064 A JP H02248064A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive layer
- fixing
- wafer
- sensitive adhesive
- fixing member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000012790 adhesive layer Substances 0.000 claims abstract description 64
- 239000010410 layer Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 53
- 239000000853 adhesive Substances 0.000 claims abstract description 40
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 56
- 230000001070 adhesive effect Effects 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 11
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 239000004088 foaming agent Substances 0.000 claims description 4
- 239000004831 Hot glue Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 description 8
- -1 peroxide compounds Chemical class 0.000 description 7
- 229920001577 copolymer Polymers 0.000 description 6
- 230000014759 maintenance of location Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000004604 Blowing Agent Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 229920005601 base polymer Polymers 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 238000005187 foaming Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Chemical class 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000003094 microcapsule Substances 0.000 description 2
- 239000012188 paraffin wax Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- UWFRVQVNYNPBEF-UHFFFAOYSA-N 1-(2,4-dimethylphenyl)propan-1-one Chemical compound CCC(=O)C1=CC=C(C)C=C1C UWFRVQVNYNPBEF-UHFFFAOYSA-N 0.000 description 1
- 150000003923 2,5-pyrrolediones Chemical class 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical class COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- BGQAZAHWMRSYGG-UHFFFAOYSA-N CCCCO.CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O Chemical compound CCCCO.CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O BGQAZAHWMRSYGG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical class CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002832 nitroso derivatives Chemical class 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 150000003349 semicarbazides Chemical class 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体チップ固着キャリヤの製造方法、及び
ウェハ固定部材に関する。さらに詳しくは、半導体チッ
プをチップキャリヤに固着するための接着剤を、分断前
の半導体ウェハに予め付設した状態で取り扱うようにし
て製造工程を簡略化したものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a semiconductor chip fixing carrier and a wafer fixing member. More specifically, the manufacturing process is simplified by handling the adhesive for fixing the semiconductor chips to the chip carrier while being attached to the semiconductor wafer before cutting.
発明の背景
回路パターンが形成された半導体ウェハは、必要に応じ
裏面研摩して厚さ調整したのち、ダイシング工程で素子
小片に分断され、形成された半導体チップは、マウント
工程におかれて接着剤を介しチップキャリヤに固着され
たのち、ボンディング工程に移行される。分断に際して
は切断屑の除去等のため適度な液圧（通常２ ｋｇ ／
ｃＪ程度）で洗浄することが通例である。Background of the Invention A semiconductor wafer on which a circuit pattern has been formed is back-polished to adjust the thickness as necessary, and then divided into small element pieces in a dicing process.The formed semiconductor chips are then placed in a mounting process and coated with an adhesive. After being fixed to the chip carrier via the bonding process, the chip is fixed to the chip carrier. When cutting, apply appropriate hydraulic pressure (usually 2 kg /
It is customary to wash with about cJ).
前記において、チップキャリヤに接着剤を付設し、その
接着剤を介して半導体チップを固着するこれまでの方法
では、接着剤層の厚さを均一にすることが困難であった
り、接着剤の付設に特殊な装置を要したり、また付設に
長時間を要したりするため、半導体チップに分断する前
の半導体ウェハに予め固着用の接着剤を設ける方法が試
みられている。In the above, with the conventional method of attaching an adhesive to a chip carrier and fixing a semiconductor chip through the adhesive, it is difficult to make the thickness of the adhesive layer uniform, and it is difficult to apply the adhesive. Since this requires special equipment and takes a long time to attach, attempts have been made to apply a bonding adhesive to the semiconductor wafer before cutting it into semiconductor chips.
従来の技術
従来、前記の方法として、支持基材の上に導電性接着剤
層を剥離可能に付設した固定部材を用い、先ずその接着
剤層に半導体ウェハを接着保持させ、その半導体ウェハ
に溝を設けて割り、素子小片に分断する。次に、支持基
材を延伸して、形成された半導体チップを導電性接着剤
層と共に一括剥離し、落下散在した半導体チップを個々
に拾い上げつつ、その導電性接着剤層を介してチップキ
ャリヤに固着する方法が提案されている（特開昭６０＝
５７６４２号公報、同６０−１８２２００号公報）。従
ってこの方法では、固定部材がダイシング工程において
半導体ウェハを接着保持する役割も兼ねており、工程が
簡略な利点を有している。2. Description of the Related Art Conventionally, the above-mentioned method uses a fixing member having a conductive adhesive layer removably attached to a supporting base material, first adheres and holds a semiconductor wafer on the adhesive layer, and then grooves are formed in the semiconductor wafer. and divide it into small element pieces. Next, the supporting base material is stretched, the formed semiconductor chips are peeled off together with the conductive adhesive layer, and the fallen and scattered semiconductor chips are picked up individually and attached to the chip carrier via the conductive adhesive layer. A method of fixing the
No. 57642, No. 60-182200). Therefore, in this method, the fixing member also plays the role of adhering and holding the semiconductor wafer during the dicing process, and has the advantage of simplifying the process.
発明が解決しようとする課題
しかしながら、支持基材と導電性接着剤層との接着力を
調整することが困難な問題点があった。Problems to be Solved by the Invention However, there was a problem in that it was difficult to adjust the adhesive force between the supporting base material and the conductive adhesive layer.
すなわち、半導体ウェハを素子小片に分断する点よりは
、分断時に支持基材と導電性接着剤層とが眉間剥離して
分断不能や分断寸法ミス等の事態が生じないよう、その
剥がし力に耐える強い保持力が要求される反面、形成さ
れた半導体チップを導電性接着剤層と共に支持基材より
剥離する点よりは、弱い接着力であることが要求される
。そのため、これらの背反する要求がバランスするよう
支持基材と導電性接着剤層との接着力を調整する必要が
あるが、その調整が困難な問題点があった。In other words, rather than cutting the semiconductor wafer into small element pieces, it is important to withstand the peeling force so that the supporting base material and the conductive adhesive layer do not peel off during cutting, resulting in failure to cut or incorrect cutting dimensions. Although a strong holding force is required, a weak adhesive force is required in order to prevent the formed semiconductor chip from being peeled off from the supporting base material together with the conductive adhesive layer. Therefore, it is necessary to adjust the adhesive force between the supporting base material and the conductive adhesive layer so that these conflicting demands are balanced, but there is a problem in that adjustment is difficult.
半導体ウェハの全厚さを回転丸刃等で切断する方式など
のように、大きい保持力が要求される場合に適用できる
ものを得ることは特に困難であった。It has been particularly difficult to obtain a method that can be applied to cases where a large holding force is required, such as a method in which the entire thickness of a semiconductor wafer is cut with a rotating circular blade or the like.
課題を解決するための手段
本発明は、感圧接着層を介した保持方式とし、その感圧
接着層をチップ固着用の接着剤層より容易に剥離できる
ようにして、上記の課題を克服したものである。Means for Solving the Problems The present invention overcomes the above problems by adopting a holding method using a pressure-sensitive adhesive layer and making the pressure-sensitive adhesive layer more easily peelable than the adhesive layer for fixing the chip. It is something.
すなわち、本発明は、支持基材に設けた保持用感圧接着
層の上に、固着用接着剤層を介し半導体ウェハを接着固
定して素子小片に分断する工程、形成した半導体チップ
を固着用接着剤層と共に保持用感圧接着層より剥離する
工程、剥離した半導体チップをその固着用接着剤層を介
しチップキャリヤに固着する工程からなることを特徴と
する半導体チップ固着キャリヤの製造方法、及び支持基
材の上に、素子小片に分断する半導体ウェハを支持する
ための保持用感圧接着層を有し、その保持用感圧接着層
の上に、分断形成した半導体チップをチップキャリヤに
固着するための固着用接着剤層を有してなり、その保持
用感圧接着層と固着用接着剤層とが剥離可能に形成され
ていることを特徴とするウェハ固定部材を提供するもの
である。That is, the present invention includes a step of adhesively fixing a semiconductor wafer on a holding pressure-sensitive adhesive layer provided on a supporting base material via a fixing adhesive layer and dividing it into small element pieces, and a process for fixing the formed semiconductor chips to a holding pressure-sensitive adhesive layer. A method for producing a semiconductor chip-fixed carrier, comprising the steps of peeling the semiconductor chip together with the adhesive layer from the holding pressure-sensitive adhesive layer, and fixing the peeled semiconductor chip to the chip carrier via the fixing adhesive layer, and A holding pressure-sensitive adhesive layer is provided on the support base material to support the semiconductor wafer that is to be divided into small element pieces, and the semiconductor chips that have been divided and formed are fixed to the chip carrier on the holding pressure-sensitive adhesive layer. The present invention provides a wafer fixing member comprising a fixing adhesive layer for holding the wafer, and the holding pressure-sensitive adhesive layer and the fixing adhesive layer are formed to be releasable. .
作 用
支持基材とチップ固着用の接着剤層との間に保持用感圧
接着層を、該接着剤層に対し剥離可能に介在させること
゛により、分断時に半導体ウニ／Ｘを保持させる際の接
着力と、分断形成された半導体チップを固着用接着剤層
と共に剥離する際の接着力とを実質的に他に影響されな
いで独自に設定することができる。その結果、分断時に
おいては充分な力で半導体ウェハを保持することができ
、また剥離時においては半導体チップを固着用接着剤層
と共にスムースに離去することかで・きる。Function: By interposing a pressure-sensitive adhesive layer for holding between the supporting base material and the adhesive layer for fixing the chip so that the adhesive layer can be peeled off, it is possible to hold the semiconductor sea urchin/X at the time of separation. It is possible to independently set the adhesive force when separating the semiconductor chip and the adhesive force when separating the semiconductor chip together with the fixing adhesive layer without being substantially influenced by other factors. As a result, the semiconductor wafer can be held with sufficient force during separation, and the semiconductor chips can be smoothly separated together with the fixing adhesive layer during peeling.
実施例
第１図に例示したように、本発明の方法において半導体
ウェハの素子小片への分断は、半導体ウェハ１が固着用
接着剤層２と接着され、その固着用接着剤層２が保持用
感圧接着層３を介し支持基材４に固定された状態で行わ
れる。Embodiment As illustrated in FIG. 1, in the method of the present invention, a semiconductor wafer is divided into small element pieces by bonding a semiconductor wafer 1 with a fixing adhesive layer 2, and using the fixing adhesive layer 2 as a holding layer. This is carried out while being fixed to the support base material 4 via the pressure-sensitive adhesive layer 3.
その状態の形成方式は任意である。例えば、半導体ウェ
ハに固着用接着剤層を設け、支持基材に保持用感圧接着
層を設けてその固着用接着剤層と保持用感圧接着層とを
接着する方式などにより形成してもよい。前記状態の好
ましい形成方式は、予め支持基材の上に保持用感圧接着
層と固着用接着剤層を順次設けてなるウェハ固定部材を
用いる方式である。第３図にウェハ固定部材の構成例を
示した。４が支持基材、３が保持用感圧接着層、２が固
着用接着剤層である。なお、５は半導体ウェハを接着す
るまでの間、固着用接着剤層２を被覆保護するセパレー
タである。セパレータは必要に応じて設けられる。固着
用接着剤層は連続面として形成されていてもよいし、半
導体ウェハの平面形態、ないし配置間隔に対応させてパ
ターン状態に形成されていてもよい。The method of forming this state is arbitrary. For example, it may be formed by a method in which a bonding adhesive layer is provided on a semiconductor wafer, a holding pressure-sensitive adhesive layer is provided on a supporting base material, and the bonding adhesive layer and the holding pressure-sensitive adhesive layer are bonded. good. A preferred method for forming the above-mentioned state is to use a wafer fixing member in which a pressure-sensitive adhesive layer for holding and an adhesive layer for fixing are sequentially provided on a supporting base material in advance. FIG. 3 shows an example of the structure of the wafer fixing member. 4 is a supporting base material, 3 is a pressure-sensitive adhesive layer for holding, and 2 is an adhesive layer for fixing. Note that 5 is a separator that covers and protects the fixing adhesive layer 2 until the semiconductor wafer is bonded. A separator is provided as necessary. The fixing adhesive layer may be formed as a continuous surface, or may be formed in a pattern corresponding to the planar form or arrangement interval of the semiconductor wafer.
接着固定した半導体ウェハ１を分断する方式については
特に限定はない。半導体ウェハに溝を設けて割る方式で
もよい。本発明では、半導体ウェハの全厚さにわたり回
転丸刃等で切断する方式を採ることも可能である。その
場合、第２図のように固着用接着剤層２の全厚さを含め
て切れ目１１を入れる方式が、後続の半導体チップの個
別剥離に有利である。なお支持基材４は、分断しないで
一体物として残存させておくことが取り扱いを容易とす
るうえで有利である。その際、支持基材４の一部に切り
込゛み溝が入る程度は許容される。前記の半導体ウェハ
の全厚さを切断する方式は、得られる半導体チップが寸
法精度に優れる利点がある。There is no particular limitation on the method of dividing the adhesively fixed semiconductor wafer 1. A method may also be used in which grooves are provided in the semiconductor wafer and the wafer is broken. In the present invention, it is also possible to adopt a method of cutting the entire thickness of the semiconductor wafer with a rotating circular blade or the like. In that case, a method of making cuts 11 through the entire thickness of the fixing adhesive layer 2 as shown in FIG. 2 is advantageous for subsequent individual peeling of the semiconductor chips. Note that it is advantageous for the support base material 4 to remain as a single piece without being divided, in order to facilitate handling. At this time, it is permissible to cut a groove into a part of the support base material 4. The above method of cutting the entire thickness of the semiconductor wafer has the advantage that the resulting semiconductor chips have excellent dimensional accuracy.
本発明の方法において分断工程を経て形成された半導体
チップは、固着用接着剤層と共に保持用感圧接着層より
剥離され、その固着用接着剤層を介しチップキャリヤに
固着される。The semiconductor chip formed through the cutting step in the method of the present invention is peeled off from the holding pressure-sensitive adhesive layer together with the fixing adhesive layer, and is fixed to the chip carrier via the fixing adhesive layer.
半導体チップを固着用接着剤層と共に剥離し、チップキ
ャリヤにマウントする方式は任意である。Any method may be used to peel off the semiconductor chip together with the adhesive layer for fixation and mount it on the chip carrier.
例えば、支持基材を延伸して半導体チップを一括剥離し
て落下させたのち、真空チャックで個々に拾い上げてマ
ウントする方式などでもよい。好ましい方式は、切断分
離した素子小片をそのまま保持用感圧接着層に支持せた
状態で個々のチップをニードル等で突き上げ、真空チャ
ックで吸着してピックアップし、その保持下に移動させ
てマウントする方式などのように、同じ保持手段を介し
て個々の半導体チップについて剥離とマウントを一連に
行う方式である。この場合、形成した半導体チップの散
在を防止できる利点がある。For example, a method may be used in which the supporting base material is stretched, the semiconductor chips are peeled off all at once and dropped, and then the semiconductor chips are individually picked up and mounted using a vacuum chuck. A preferred method is to push up individual chips with a needle or the like while supporting the cut and separated element pieces as they are on a holding pressure-sensitive adhesive layer, pick them up by suction with a vacuum chuck, and move them under the holding pressure-sensitive adhesive layer to mount them. In this method, individual semiconductor chips are sequentially peeled off and mounted using the same holding means. In this case, there is an advantage that scattering of the formed semiconductor chips can be prevented.
本発明の方法、ないしウェハ固定部材においては、半導
体チップを固着用接着剤層と共に剥離するため、保持用
感圧接着層と固着用接着剤層とは剥離可能に形成される
。In the method or wafer fixing member of the present invention, the holding pressure-sensitive adhesive layer and the fixing adhesive layer are formed to be releasable, since the semiconductor chip is peeled off together with the fixing adhesive layer.
剥離を可能とする方式については特に限定はな（、剥離
工程において保持用感圧接着層と固着用接着剤層との接
着力を低下、ないし喪失させうる方式であればよい。そ
の例としては、保持用感圧接着層の硬化方式、発泡方式
ないし加熱膨脹方式、プルーミング方式、保持用感圧接
着層ないし固着用接着剤層の冷却方式、保持用感圧後１
着層と固着用接着剤層との間に加熱処理で作用する接着
力低減層を介在させる方式などがあげられる。本発明で
はこれらの方式を適宜に組み合わせて適用してもよい。There are no particular limitations on the method that enables peeling (any method may be used as long as it reduces or loses the adhesive force between the holding pressure-sensitive adhesive layer and the fixing adhesive layer in the peeling process. , curing method of pressure-sensitive adhesive layer for retention, foaming method or heating expansion method, pluming method, cooling method of pressure-sensitive adhesive layer for retention or fixing adhesive layer, post-pressure-sensitivity for retention 1
Examples include a method in which an adhesive force reducing layer that acts by heat treatment is interposed between the adhesive layer and the adhesive layer for fixing. In the present invention, these methods may be appropriately combined and applied.
前記した保持用感圧接着層の硬化方式は、架橋度を増大
させて接着力を低下させるもので、その形成は紫外線硬
化型や加熱硬化型などの感圧接着剤を用いることにより
行うことができる。The method of curing the pressure-sensitive adhesive layer for holding described above is to increase the degree of crosslinking and reduce the adhesive force, and its formation can be performed by using a pressure-sensitive adhesive such as an ultraviolet curable type or a heat-curable type. can.
紫外線硬化型の感圧接着剤の代表例としては、不飽和結
合を２個以上有する付加重合性化合物やエポキシ基を有
するアルコキシシランの如き光重合性化合物と、カルボ
ニル化合物や有機硫黄化合物、過酸化物、アミン、オニ
ウム塩系化合物の如き光重合開始剤を配合したゴム系感
圧接着剤や、アクリル系感圧接着剤などがあげられる（
特開昭６０−１９６９５６号公報）。光重合性化合物、
光重合開始剤の配合量は、それぞれベースポリマ１００
重量部あたり１０〜５００重量部、０．１〜２０重量部
が一般的である。なお、アクリル系ポリマには、通例の
もの（特公昭５７−５４０６８号公報、特公昭５８−３
３９０９号公報等）のほか、側鎖にラジカル反応性不飽
和基を有するもの（特公昭６１−５６２６４号公報）や
１、分子中にエポキシ基を有するものなども用いうる。Typical examples of UV-curable pressure-sensitive adhesives include photopolymerizable compounds such as addition-polymerizable compounds with two or more unsaturated bonds and alkoxysilanes with epoxy groups, carbonyl compounds, organic sulfur compounds, and peroxide compounds. Examples include rubber-based pressure-sensitive adhesives containing photopolymerization initiators such as compounds, amines, and onium salt compounds, and acrylic-based pressure-sensitive adhesives (
(Japanese Patent Application Laid-Open No. 60-196956). photopolymerizable compound,
The compounding amount of the photopolymerization initiator is 100% of the base polymer, respectively.
The amount per part by weight is generally 10 to 500 parts by weight, and 0.1 to 20 parts by weight. Note that the acrylic polymers include the usual ones (Japanese Patent Publication No. 57-54068, Japanese Patent Publication No. 58-3)
3909, etc.), those having a radically reactive unsaturated group in the side chain (Japanese Patent Publication No. 61-56264), 1, and those having an epoxy group in the molecule can also be used.
また、不飽和結合を２個以上有する付加重合性化合物と
しては、例えばアクリル酸やメタクリル酸の多価アルコ
ール系エステルやオリゴエステル、エポキシ系やウレタ
ン系化合物などがあげられる。Examples of addition polymerizable compounds having two or more unsaturated bonds include polyhydric alcohol esters and oligoesters of acrylic acid and methacrylic acid, epoxy compounds, and urethane compounds.
さらに、エチレングリコールジグリシジルエーテルの如
き分子中にエポキシ基を１個又は２個以上有するエポキ
シ基官能性架橋剤を追加配合して架橋効率を上げること
もできる。紫外線硬化型の保持用感圧接着層を形成する
場合には紫外線照射処理を可能とすべ（支持基材には透
明なフィルム等が用いられる。Furthermore, crosslinking efficiency can be increased by adding an epoxy group-functional crosslinking agent having one or more epoxy groups in the molecule, such as ethylene glycol diglycidyl ether. When forming an ultraviolet-curable holding pressure-sensitive adhesive layer, it is necessary to enable ultraviolet irradiation treatment (a transparent film or the like is used as the supporting base material).
加熱架橋型の感圧接着剤の代表例としては、ポリイソシ
アネート、メラミン樹脂、アミン−エポキシ樹脂、過酸
化物、金属キレート化合物の如き架橋剤や、必要に応じ
ジビニルベンゼン、エチレングリコールジアクリレート
、トリメチロールプロパントリメタクリレートの如き多
官能性化合物からなる架橋調節剤などを配合したゴム系
感圧接着剤やアクリル系感圧接着剤などがあげられる。Typical examples of heat-crosslinkable pressure-sensitive adhesives include crosslinking agents such as polyisocyanates, melamine resins, amine-epoxy resins, peroxides, metal chelate compounds, and divinylbenzene, ethylene glycol diacrylate, and trichloride as required. Examples include rubber-based pressure-sensitive adhesives and acrylic-based pressure-sensitive adhesives blended with crosslinking regulators made of polyfunctional compounds such as methylolpropane trimethacrylate.
保持用感圧接着層の発泡方式、ないし加熱膨脹方式は、
加熱処理で保持用感圧接着層を発泡構造とすることによ
り、あるいは当該層の膨脹下に表面を凹凸構造とするこ
とにより、接着面積を減少させて接着力を低下させるも
ので、その形成は保持用感圧接着層に発泡剤、ないし加
熱膨脹剤を含有させることにより行うことができる。前
記した硬化方式との併用は、接着力の低下に特に有効で
ある。The foaming method or heating expansion method for the pressure-sensitive adhesive layer for retention is as follows:
By making the holding pressure-sensitive adhesive layer into a foamed structure through heat treatment, or by creating an uneven structure on the surface under the expansion of the layer, the adhesive area is reduced and the adhesive strength is reduced. This can be done by incorporating a foaming agent or a heating expansion agent into the holding pressure-sensitive adhesive layer. Combination use with the above-mentioned curing method is particularly effective in reducing adhesive strength.
発泡剤としては、例えば炭酸アンモニウムやアジド類の
如き無機系発泡剤、アゾ系化合物やヒドラジン系化合物
、セミカルバジド系化合物、トリアゾール系化合物、Ｎ
−ニトロソ系化合物の如き有機系発泡剤など、公知物を
用いてよい。加熱膨脹剤としても、例えばガス等を封入
したマイクロカプセルなど、公知物を用いてよい。前記
のマイクロカプセルは、発泡剤としても用いることがで
きて、前記した膨脹による表面凹凸構造とするか発泡に
よる発泡構造とするかを制御することができ、また感圧
接着剤中に容易に分散させることができて好ましく用い
うる。発泡剤、ないし加熱膨脹剤の使用量は、ベースポ
リマ１００重量部あたり３〜３００重量部が一般的であ
る。Examples of the blowing agent include inorganic blowing agents such as ammonium carbonate and azides, azo compounds, hydrazine compounds, semicarbazide compounds, triazole compounds, N
- Known materials such as organic blowing agents such as nitroso compounds may be used. Known materials such as microcapsules filled with gas or the like may be used as the heating expansion agent. The microcapsules described above can also be used as a foaming agent, and can control whether the surface has an uneven structure due to expansion or a foamed structure due to foaming, and can be easily dispersed in pressure-sensitive adhesives. It can be used preferably. The amount of the blowing agent or heating expansion agent used is generally 3 to 300 parts by weight per 100 parts by weight of the base polymer.
保持用感圧接着層のプルーミング方式は、加熱処理で固
着用接着剤層との界面にプルーミング剤を活発に析出さ
せて接着力を低下させるもので、その形成は保持用感圧
接着層にプルーミング剤を含有させることにより行うこ
とができる。用いるプルーミング剤は、固着用接着剤層
との界面における接着力を低下させるものであればよく
、一般には界面活性剤やシリコーン組成物、パラフィン
やワックス等の低融点物質などが用いられる。有機溶剤
や水等の液体もマイクロカプセル化して用いることがで
きる。界面活性剤の使用は、帯電防止能を付与しつる利
点などもある。プルーミング剤の使用量は、ベースポリ
マ１００重量部あたり１０〜３００重量部が一般的であ
る。The pluming method of the pressure-sensitive adhesive layer for retention is a method in which a plumping agent is actively precipitated at the interface with the adhesive layer for fixation through heat treatment, reducing the adhesive strength. This can be done by incorporating an agent. The pluming agent to be used may be one that reduces the adhesive force at the interface with the fixing adhesive layer, and generally includes surfactants, silicone compositions, and low-melting substances such as paraffin and wax. Liquids such as organic solvents and water can also be microencapsulated and used. The use of surfactants also has the advantage of imparting antistatic properties. The amount of plumping agent used is generally 10 to 300 parts by weight per 100 parts by weight of the base polymer.
保持用感圧接着層ないし固着用接着剤層の冷却方式は、
低温化により接着力を低下させるもので、冷却温度は一
３０℃程度までが一般的である。冷却方式は、他の方式
を適用したあとに適用することもできる。The cooling method for the holding pressure-sensitive adhesive layer or the fixing adhesive layer is as follows:
The adhesive strength is reduced by lowering the temperature, and the cooling temperature is generally about -30°C. The cooling method can also be applied after applying other methods.
加熱処理で作用する接着力低減層を介在させる方式は、
第４図のように、固着用接着剤層２と保持用感圧接着層
３との間に、接着力低減層６を固形層として設け、加熱
処理により、接着力低減層６を変化させて当該界面の接
着力を低減させるものである。接着力低減層の形成には
、前記のマイクロカプセル化した発泡剤、ないし加熱膨
脹剤やプルーミング剤のほか、加熱処理で軟化、ないし
流動体化するパラフィンやワックス等の低融点物質も用
いうる。接着力低減層は、保持用感圧接着層等の面上に
部分塗布やパターン塗布した状態のものとして形成して
もよく、固着用接着剤層と保持用感圧接着層との界面の
全面を占有する必要はない。The method of interposing an adhesion reduction layer that acts through heat treatment is
As shown in FIG. 4, an adhesive strength reducing layer 6 is provided as a solid layer between the fixing adhesive layer 2 and the holding pressure sensitive adhesive layer 3, and the adhesive strength reducing layer 6 is changed by heat treatment. This reduces the adhesive force at the interface. In addition to the microencapsulated foaming agent, heat-expanding agent, and pluming agent described above, low-melting substances such as paraffin and wax that soften or become fluidized by heat treatment can also be used to form the adhesive force-reducing layer. The adhesive strength reducing layer may be formed by partial coating or pattern coating on the surface of the pressure-sensitive adhesive layer for holding, etc., or it may be formed by applying it partially or in a pattern on the surface of the pressure-sensitive adhesive layer for holding. There is no need to occupy it.
本発明において、保持用感圧接着層の厚さは１〜１ｏｏ
ｕａ＋、就中１〜４０μｍが適当である。また、固着用
接着剤層の厚さは１〜１００μｍが適当である。In the present invention, the thickness of the holding pressure-sensitive adhesive layer is 1 to 100 mm.
ua+, particularly 1 to 40 μm, is suitable. Moreover, the thickness of the adhesive layer for fixing is suitably 1 to 100 μm.
固着用接着剤層の形成には、熱可塑性樹脂や熱硬化性樹
脂からなる適宜な接着剤を用いてよい。An appropriate adhesive made of thermoplastic resin or thermosetting resin may be used to form the fixing adhesive layer.
一般には、エチレン・酢酸ビニル共重合体、エチレン・
アクリル酸エステル共重合体、ポリエチレン、ポリプロ
ピレン、ポリアミド、ポリエステル、ポリカーボネート
、セルロース誘導体、ポリビニルアセタール、ポリビニ
ルエーテル、ポリウレタン、フェノキシ樹脂の如き熱可
塑性樹脂からなるホットメルト型接着剤、エポキシ樹脂
、ポリイミド樹脂、マレイミド樹脂、シリコーン樹脂、
フェノール樹脂の如き熱硬化性樹脂を用いた接着剤、そ
の他アクリル樹脂、ゴム系ポリマ、フッ素ゴム系ポリマ
、フッ素樹脂などからなる接着剤も用いられる。熱硬化
性樹脂系接着剤による固着用接着剤層は、Ｂステージ状
態として形成される。固着用接着剤層に、例えばアルミ
ニウム、銅、銀、金、パラジウム、カーボンの如き導電
性物質からなる微粉末を含有させて導電性を付与しても
よい。また、アルミナの如き熱伝導性物質からなる微粉
末を含有させて熱伝導性を高めてもよい。Generally, ethylene/vinyl acetate copolymer, ethylene/vinyl acetate copolymer,
Hot-melt adhesives made of thermoplastic resins such as acrylic ester copolymers, polyethylene, polypropylene, polyamide, polyester, polycarbonate, cellulose derivatives, polyvinyl acetal, polyvinyl ether, polyurethane, and phenoxy resins, epoxy resins, polyimide resins, and maleimides. resin, silicone resin,
Adhesives made of thermosetting resins such as phenolic resins, and adhesives made of acrylic resins, rubber polymers, fluororubber polymers, fluororesins, etc. can also be used. The fixing adhesive layer made of a thermosetting resin adhesive is formed in a B-stage state. The fixing adhesive layer may contain fine powder of a conductive substance such as aluminum, copper, silver, gold, palladium, or carbon to impart conductivity. Further, fine powder made of a thermally conductive substance such as alumina may be included to improve thermal conductivity.
本発明では、保持用感圧接着層と固着用接着剤層との接
着力が、１８０度ビール値（常温、引張速度３００ ｒ
ｔｔｍ ／分）に基づき、半導体ウエノ１の分断時にお
いて２００ｇ／２０＋ｎ＋ｍ以上、形成された半導体チ
ップの剥離時において１５０ ｇ ／ ２０ ｗｍ以下
となるよう、保持用感圧接着層、ないし固着用接着剤層
を調製したものが、分断時の保持力、剥離時の剥離容易
性などの点より好ましい。In the present invention, the adhesive force between the holding pressure-sensitive adhesive layer and the fixing adhesive layer is 180 degrees beer value (normal temperature, tensile speed 300 r
(ttm/min), the pressure-sensitive adhesive layer for holding or the adhesive for fixing is set so that the weight is 200 g/20+n+m or more when cutting the semiconductor wafer 1 and 150 g/20 wm or less when peeling the formed semiconductor chip. A prepared layer is preferable from the viewpoints of holding power during separation, ease of peeling during peeling, and the like.
支持基材としては、一般にポリプロピレン、ポリエチレ
ン、ポリエステル、ポリカーボネート、エチレン・酢酸
ビニル共重合体、エチレン・プロピレン共重合体、エチ
レン・エチルアクリレート共重合体、ポリ塩化ビニルの
如きプラスチックからなるフィルムや、金属箔などが用
いられる。帯電防止能を有するプラスチック系の支持基
材は、導電性物質、例えば金属、合金、その酸化物など
からなる厚さ３０〜５００人の蒸着層を有するフィルム
や、このフィルムのラミネート体などとして得ることか
できる。支持基材の厚さは５〜２００μ１１就中１０〜
１００ｕａが一般的である。The supporting base material is generally a film made of plastic such as polypropylene, polyethylene, polyester, polycarbonate, ethylene/vinyl acetate copolymer, ethylene/propylene copolymer, ethylene/ethyl acrylate copolymer, polyvinyl chloride, or metal. Foil etc. are used. The plastic supporting base material having antistatic ability can be obtained as a film having a vapor-deposited layer of 30 to 500 layers of conductive material, such as metal, alloy, or its oxide, or a laminate of this film. I can do it. The thickness of the supporting base material is 5 to 200μ11 out of 10
100ua is common.
本発明の方法において半導体チップ固着キャリヤの製造
は、例えばホットメルト型接着剤の場合の加熱融着処理
や、Ｂステージ状態の熱硬化性樹脂系接着剤の場合の硬
化処理など、その固着用接着剤層に応じた適宜な接着処
理で、チップキャリヤにマウントした半導体チップを固
着処理することにより完了する。形成された半導体チッ
プ固着キャリヤは通常、ボンディング工程等の後続工程
へと導かれる。In the method of the present invention, the semiconductor chip fixing carrier is produced by bonding the carrier, such as by heat fusing treatment in the case of a hot-melt adhesive or curing treatment in the case of a B-stage thermosetting resin adhesive. The process is completed by fixing the semiconductor chip mounted on the chip carrier using an appropriate adhesive process depending on the adhesive layer. The formed semiconductor chip-fixed carrier is typically subjected to a subsequent process such as a bonding process.
発明の効果
本発明によれば、保持用感圧接着層の上に剥離可能に設
けた固着用接着剤層を介して半導体ウェハを接着固定す
るようにしたので、素子小片への分断時に半導体ウェハ
を充分な保持力で固定することができると共に、形成し
た半導体チップを固着用接着剤層と共にスムースに剥離
することができ、その固着用接着剤層をチップキャリヤ
への固着にそのまま利用することができる。Effects of the Invention According to the present invention, since the semiconductor wafer is adhesively fixed via the adhesive layer for fixing which is removably provided on the pressure-sensitive adhesive layer for holding, the semiconductor wafer is can be fixed with sufficient holding force, and the formed semiconductor chip can be peeled off smoothly together with the fixing adhesive layer, and the fixing adhesive layer can be used as is for fixing to the chip carrier. can.
第１図は半導体ウェハを接着固定した状態の断面図、第
２図は半導体ウェハを分断した状態の断面図、第３図は
ウェハ固定部材の構成例を示した断面図、第４図はウェ
ハ固定部材の他の構成例を示した断面図である。
１：半導体ウェハ
２：固着用接着剤層
３二保持用感圧接着層
４：支持基材
５：セパレータ
６：接着力低減層
特許出願人 日東電工株式会社Fig. 1 is a cross-sectional view of a semiconductor wafer fixed with adhesive, Fig. 2 is a cross-sectional view of a semiconductor wafer separated, Fig. 3 is a cross-sectional view showing an example of the configuration of a wafer fixing member, and Fig. 4 is a cross-sectional view of a wafer fixed by adhesive. FIG. 7 is a sectional view showing another example of the structure of the fixing member. 1: Semiconductor wafer 2: Adhesive layer for fixing 3 2 Pressure-sensitive adhesive layer for holding 4: Support base material 5: Separator 6: Adhesive force reduction layer Patent applicant Nitto Denko Corporation
Claims (1)
接着剤層を介し半導体ウェハを接着固定して素子小片に
分断する工程、形成した半導体チップを固着用接着剤層
と共に保持用感圧接着層より剥離する工程、剥離した半
導体チップをその固着用接着剤層を介しチップキャリヤ
に固着する工程からなることを特徴とする半導体チップ
固着キャリヤの製造方法。 ２、分断工程において、少なくとも半導体ウェハ及び固
着用接着剤層の全厚さにわたり切れ目を入れる請求項１
に記載の製造方法。 ３、剥離工程及び固着工程において、固着用接着剤層と
共に半導体チップを剥離する処理と、剥離した半導体チ
ップをチップキャリヤにマウントする処理を、同じ保持
手段を介して個々の半導体チップについて一連に行う請
求項２に記載の製造方法。 ４、支持基材の上に、素子小片に分断する半導体ウェハ
を支持するための保持用感圧接着層を有し、その保持用
感圧接着層の上に、分断形成した半導体チップをチップ
キャリヤに固着するための固着用接着剤層を有してなり
、その保持用感圧接着層と固着用接着剤層とが剥離可能
に形成されていることを特徴とするウェハ固定部材。 ５、支持基材が透明フィルムからなる請求項４に記載の
ウェハ固定部材。 ６、保持用感圧接着層が紫外線硬化型の感圧接着剤から
なる請求項５に記載のウェハ固定部材。 ７、保持用感圧接着層が加熱硬化型の感圧接着剤からな
る請求項４に記載のウェハ固定部材。 ８、保持用感圧接着層が発泡剤、ないし加熱膨脹剤を含
有する請求項４に記載のウェハ固定部材。 ９、保持用感圧接着層が加熱型プルーミング剤を含有す
る請求項４に記載のウェハ固定部材。 １０、保持用感圧接着層と固着用接着剤層との間に加熱
処理で作用する接着力低減層を有する請求項４に記載の
ウェハ固定部材。 １１、固着用接着剤層がホットメルト型接着剤からなる
請求項４に記載のウェハ固定部材。 １２、固着用接着剤層がＢステージ状態の接着剤からな
る請求項４に記載のウェハ固定部材。 １３、固着用接着剤層が導電性を有するものである請求
項４１こ記載のウェハ固定部材。[Claims] 1. A step of adhesively fixing a semiconductor wafer to a holding pressure-sensitive adhesive layer provided on a supporting base material via a fixing adhesive layer and cutting it into small element pieces; A method for manufacturing a semiconductor chip fixing carrier, comprising the steps of peeling the semiconductor chip together with the fixing adhesive layer from the holding pressure-sensitive adhesive layer, and fixing the peeled semiconductor chip to the chip carrier via the fixing adhesive layer. . 2. Claim 1: In the cutting step, cuts are made over at least the entire thickness of the semiconductor wafer and the adhesive layer for fixing.
The manufacturing method described in. 3. In the peeling process and the fixing process, the process of peeling off the semiconductor chip together with the adhesive layer for fixing and the process of mounting the peeled semiconductor chip on a chip carrier are performed in series for each semiconductor chip using the same holding means. The manufacturing method according to claim 2. 4. A holding pressure-sensitive adhesive layer for supporting the semiconductor wafer to be cut into small element pieces is provided on the support base material, and the cut-off semiconductor chips are placed on the holding pressure-sensitive adhesive layer as a chip carrier. A wafer fixing member comprising a fixing adhesive layer for fixing the wafer to a wafer, and the holding pressure-sensitive adhesive layer and the fixing adhesive layer are formed to be releasable. 5. The wafer fixing member according to claim 4, wherein the supporting base material is made of a transparent film. 6. The wafer fixing member according to claim 5, wherein the holding pressure-sensitive adhesive layer is made of an ultraviolet-curable pressure-sensitive adhesive. 7. The wafer fixing member according to claim 4, wherein the holding pressure-sensitive adhesive layer is made of a thermosetting pressure-sensitive adhesive. 8. The wafer fixing member according to claim 4, wherein the holding pressure-sensitive adhesive layer contains a foaming agent or a heating expansion agent. 9. The wafer fixing member according to claim 4, wherein the holding pressure-sensitive adhesive layer contains a heated plumping agent. 10. The wafer fixing member according to claim 4, further comprising an adhesive force reducing layer that acts upon heat treatment between the holding pressure-sensitive adhesive layer and the fixing adhesive layer. 11. The wafer fixing member according to claim 4, wherein the fixing adhesive layer is made of a hot melt adhesive. 12. The wafer fixing member according to claim 4, wherein the fixing adhesive layer comprises an adhesive in a B-stage state. 13. The wafer fixing member according to claim 41, wherein the fixing adhesive layer is electrically conductive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6893989A JP2678655B2 (en) | 1989-03-20 | 1989-03-20 | Method for manufacturing carrier for fixing semiconductor chip and wafer fixing member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6893989A JP2678655B2 (en) | 1989-03-20 | 1989-03-20 | Method for manufacturing carrier for fixing semiconductor chip and wafer fixing member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02248064A true JPH02248064A (en) | 1990-10-03 |
| JP2678655B2 JP2678655B2 (en) | 1997-11-17 |
Family
ID=13388139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6893989A Expired - Lifetime JP2678655B2 (en) | 1989-03-20 | 1989-03-20 | Method for manufacturing carrier for fixing semiconductor chip and wafer fixing member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2678655B2 (en) |
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