JP2677304B2 - Adhesion method for sputtering target material - Google Patents
Adhesion method for sputtering target materialInfo
- Publication number
- JP2677304B2 JP2677304B2 JP63235574A JP23557488A JP2677304B2 JP 2677304 B2 JP2677304 B2 JP 2677304B2 JP 63235574 A JP63235574 A JP 63235574A JP 23557488 A JP23557488 A JP 23557488A JP 2677304 B2 JP2677304 B2 JP 2677304B2
- Authority
- JP
- Japan
- Prior art keywords
- target material
- sputtering target
- backing plate
- adhering
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、スパッタリング用ターゲット材の接着方法
に関する。The present invention relates to a method for adhering a sputtering target material.
（従来の技術） 従来、マグネトロンスパッターに用いるターゲットを
作るにはターゲット材及びバッキングプレートの接着面
に予め半田を被覆し、これを重ねて加熱し、半田付けし
ていたが、加熱雰囲気中のガス或いは半田の酸化物によ
るボイドを無くすることができず、従ってスパッター中
ターゲット材が局部的に溶けて破損したり、スパッター
むらが生じたり、また半田やバッキングプレートなどの
不純物がスパッターされる等の問題があった。(Prior Art) Conventionally, in order to make a target used for magnetron sputtering, the bonding surface of the target material and the backing plate was previously coated with solder, and this was overheated and soldered. Alternatively, it is not possible to eliminate the voids due to the oxide of the solder, and therefore the target material is locally melted and damaged during the sputter, uneven spatter occurs, and impurities such as solder and backing plate are sputtered. There was a problem.
この為、近時、ターゲット材とバッキングプレートと
を半田又はInの溶解槽内に浸漬して、ターゲット材とバ
ッキングプレートを接着している。Therefore, recently, the target material and the backing plate are immersed in a solder or In melting bath to bond the target material and the backing plate.
（発明が解決しようとする課題） ところで、上記の接着方法は、半田又はInの溶湯によ
って付着ガスを完全に除去することができず、従って10
0％の濡れ面積（溶着面積）を確保することが困難であ
り、また接着状態確認の為、Ｘ線検査が必要である。(Problems to be Solved by the Invention) By the way, in the above-described bonding method, the adhered gas cannot be completely removed by the solder or the molten metal of In.
It is difficult to secure a wetted area (welded area) of 0%, and X-ray inspection is necessary to confirm the adhesion state.
そこで本発明は、スパッタリング用ターゲット材とバ
ッキングプレートの接着面からガス、フラックス等を完
全に除去し且つ100％の接着面積を確保し、Ｘ線検査も
不要なスパッタリング用ターゲット材の接着方法を提供
しようとするものである。Therefore, the present invention provides a method for adhering a sputtering target material that completely removes gas, flux, etc. from the adhering surface of the sputtering target material and the backing plate, secures a 100% adhering area, and does not require X-ray inspection. Is what you are trying to do.
（課題を解決するための手段） 上記課題を解決するための本発明のスパッタリング用
ターゲット材の溶着方法は、スパッタリング用ターゲッ
ト材とバッキングプレートの接着面にフラックスを塗布
し、これらを半田又はInの溶解槽内に浸漬し、各々の接
着面に付着しているガスとフラックスを剥離し、半田又
はInとの比重差により液面まで浮上させ、次いでスパッ
タリング用ターゲット材とバッキングプレートの接着面
を重ね合せて接着することを特徴とするものである。(Means for Solving the Problems) The welding method of the sputtering target material of the present invention for solving the above problems is to apply flux to the bonding surfaces of the sputtering target material and the backing plate, and solder or In Immerse in the melting tank, peel off the gas and flux adhering to each adhesive surface, float to the liquid surface due to the difference in specific gravity from solder or In, and then overlay the adhesive surface of the sputtering target material and the backing plate. It is characterized by adhering together.
（作用） 上記のスパッタリング用ターゲット材の接着方法で
は、スパッタリング用ターゲット材とバッキングプレー
トの接着面にフラックスを塗布し、これらを半田又はIn
の溶解槽内に浸漬してスパッタリング用ターゲット材と
バッキングプレートの接着面に付着しているガスとフラ
ックスを剥離し、半田又はInとの比重差を利用して液面
まで浮上させるので、スパッタリング用ターゲット材と
バッキングプレートの接着面からはガスやフラックスが
完全に除去される。従って、相互の接着面を重ね合せる
と100％の接着面積を確保の上接着することができ、完
全な接着ができる。(Operation) In the above-described sputtering target material bonding method, flux is applied to the bonding surfaces of the sputtering target material and the backing plate, and these are soldered or In
It is immersed in the melting tank of the target to separate the gas and flux from the target surface for sputtering and the adhesive surface of the backing plate, and it floats up to the liquid surface by utilizing the specific gravity difference between solder and In. Gas and flux are completely removed from the bonding surface between the target material and the backing plate. Therefore, when the adhesive surfaces are overlapped with each other, 100% of the adhesive area can be secured before bonding, and complete bonding is possible.
（実施例） 本発明のスパッタリング用ターゲット材の接着方法の
一実施例を図によって説明する。第１図に示す如くPtよ
り成る厚さ5mm、縦381mm、横127mmのスパッタリング用
ターゲット材１とステンレス鋼より成る総厚15mmで接着
面５側が縦381mm、横127mm、厚さ10mm、背面側が縦、40
1mm、横147mmのバッキングプレート２の接着面４、５に
フラックス６を塗布しこれらを半田の溶解槽３内に浸漬
し、両者の接着面４、５に付着しているガスをフラック
ス６の溶融により剥離すると共にフラックス６を溶融半
田により剥離し、半田との比重差を利用して液面まで浮
上させた。次に第２図に示す如くスパッタリング用ター
ゲット材１を溶解槽３内に回転させ、接着面４を下側に
した。次いでターゲット材１を第３図に示す如く横方向
に矢印の如く移動させ、バッキングプレート２上にター
ゲット材１の接着面４を重ね合わせて接着した。その後
この接着したターゲット材１及びバッキングプレート２
を溶解槽３外へ引き上げた。(Example) An example of a method for adhering a sputtering target material of the present invention will be described with reference to the drawings. As shown in Fig. 1, the target material for sputtering 1 is 5 mm in thickness, 381 mm in length, and 127 mm in width, and is 15 mm in total thickness made of stainless steel. , 40
The flux 6 is applied to the adhesive surfaces 4 and 5 of the backing plate 2 of 1 mm in width and 147 mm in width, and these are immersed in the solder melting bath 3 to melt the gas adhering to the adhesive surfaces 4 and 5 of both to melt the flux 6. And the flux 6 was peeled off by the molten solder and floated to the liquid surface by utilizing the difference in specific gravity from the solder. Next, as shown in FIG. 2, the sputtering target material 1 was rotated into the melting tank 3 so that the bonding surface 4 faced downward. Next, the target material 1 was moved laterally as shown by the arrow in FIG. 3, and the adhesive surface 4 of the target material 1 was superposed and adhered on the backing plate 2. After that, the adhered target material 1 and backing plate 2
Was pulled out of the dissolution tank 3.
かようにして接着したスパッタリング用ターゲット材
１とバッキングプレート２との接着面からはガスとフラ
ックスは完全に除去されていて、しかも100％の接着面
積が確保されて、完全に接着されていた。Gas and flux were completely removed from the bonding surface between the sputtering target material 1 and the backing plate 2 bonded in this manner, and a 100% bonding area was secured, and the bonding was complete.
（発明の効果） 以上の説明で判るように本発明のスパッタリング用タ
ーゲット材の接着方法によれば、スパッタリング用ター
ゲット材とバッキングプレートとが相互の接着面からガ
スが完全に除去されて、100％の接着面積が確保されて
完全に接着できる。従って、従来のようなＸ線検査も不
要である。(Effect of the invention) As can be seen from the above description, according to the bonding method of the sputtering target material of the present invention, the sputtering target material and the backing plate are completely removed of gas from the mutual bonding surface, and 100% The bonding area of is secured and it can be completely bonded. Therefore, the conventional X-ray inspection is unnecessary.
第１図乃至第３図は本発明のスパッタリング用ターゲッ
ト材の接着方法の一実施例を示す工程図である。1 to 3 are process charts showing an embodiment of a method for adhering a sputtering target material according to the present invention.
Claims (1)
グプレートの接着面にフラックスを塗布し、これらを半
田又はInの溶解槽内に浸漬し、各々の接着面に付着して
いるガスとフラックスを剥離し、半田又はInとの比重差
により液面まで浮上させ、次いでスパッタリング用ター
ゲット材とバッキングプレートの接着面を重ね合わせて
接着することを特徴とするスパッタリング用ターゲット
材の接着方法。1. A flux is applied to the adhesive surface of a sputtering target material and a backing plate, and these are immersed in a solder or In melting bath to separate the gas and flux adhering to each adhesive surface, A method for adhering a sputtering target material, which comprises floating the surface of a liquid by a difference in specific gravity with solder or In, and then superposing and adhering the adhering surface of a sputtering target material and a backing plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63235574A JP2677304B2 (en) | 1988-09-20 | 1988-09-20 | Adhesion method for sputtering target material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63235574A JP2677304B2 (en) | 1988-09-20 | 1988-09-20 | Adhesion method for sputtering target material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0285363A JPH0285363A (en) | 1990-03-26 |
| JP2677304B2 true JP2677304B2 (en) | 1997-11-17 |
Family
ID=16988006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63235574A Expired - Lifetime JP2677304B2 (en) | 1988-09-20 | 1988-09-20 | Adhesion method for sputtering target material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2677304B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6191336A (en) * | 1984-10-09 | 1986-05-09 | Mitsubishi Metal Corp | Production of alloy target material |
| JPS61229314A (en) * | 1985-04-03 | 1986-10-13 | Hitachi Metals Ltd | Target material and manufacture thereof |
-
1988
- 1988-09-20 JP JP63235574A patent/JP2677304B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6191336A (en) * | 1984-10-09 | 1986-05-09 | Mitsubishi Metal Corp | Production of alloy target material |
| JPS61229314A (en) * | 1985-04-03 | 1986-10-13 | Hitachi Metals Ltd | Target material and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0285363A (en) | 1990-03-26 |
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