JP2672643B2 - Sun sensor - Google Patents
Sun sensorInfo
- Publication number
- JP2672643B2 JP2672643B2 JP1121214A JP12121489A JP2672643B2 JP 2672643 B2 JP2672643 B2 JP 2672643B2 JP 1121214 A JP1121214 A JP 1121214A JP 12121489 A JP12121489 A JP 12121489A JP 2672643 B2 JP2672643 B2 JP 2672643B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- pair
- sun sensor
- photodetector
- slit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） この発明は、例えば人工衛星を含む宇宙航行体の姿勢
を計測する太陽センサに関する。DETAILED DESCRIPTION OF THE INVENTION Object of the Invention (Industrial field of application) The present invention relates to a sun sensor for measuring the attitude of a spacecraft including an artificial satellite, for example.
（従来の技術） 従来より、人工衛星の姿勢制御には第５図に示すよう
な太陽センサがよく用いられる。この太陽センサは、ス
リット11を形成した遮蔽板12の下部に、例えばシリコン
太陽電池等の一対の光検出素子13,14を配置して構成し
たものである。光検出素子13,14は長方形（円形の場合
もある）の光検出板を斜めに２等分して切断して形成し
たもので、その斜辺が互いに平行に、スリット11に対し
て斜めに交差するように、かつ遮蔽板12に垂直に入射さ
れるときのスリット11を通過する太陽光Ｓの帯が前記斜
辺の中央に位置するように配置される。すなわち、この
太陽センサは、光検出素子13,14とスリット11の位置関
係を第５図に示すように設定することによって、太陽光
Ｓの入射角度に対応して、各光検出素子13,14に入射す
る太陽光Ｓの面積が変化し、各検出出力が互いに逆方向
に変化するので、各素子13,14の出力の差または比をと
ることによって太陽光Ｓの入射角を求めることができ
る。(Prior Art) Conventionally, a sun sensor as shown in FIG. 5 is often used for attitude control of an artificial satellite. This sun sensor is configured by arranging a pair of photo-detecting elements 13, 14 such as silicon solar cells under a shield plate 12 having a slit 11. The photodetector elements 13 and 14 are formed by cutting a rectangular (or circular in some cases) photodetector plate diagonally into two equal parts, whose hypotenuses are parallel to each other and intersect the slit 11 obliquely. In addition, the band of the sunlight S passing through the slit 11 when vertically incident on the shielding plate 12 is arranged so as to be located at the center of the hypotenuse. That is, in this sun sensor, by setting the positional relationship between the photodetecting elements 13 and 14 and the slit 11 as shown in FIG. 5, the photodetecting elements 13 and 14 are set in correspondence with the incident angle of the sunlight S. Since the area of the sunlight S incident on the object changes and the detection outputs change in opposite directions, the incident angle of the sunlight S can be obtained by taking the difference or ratio of the outputs of the elements 13 and 14. .
ところで、上記構成の太陽センサを実現するために
は、スリットに対して斜交する辺をを有する光検出素子
を形成しなければならない。一方、工業的に加工が容易
な形状は円、四角形または長方形である。したがって、
上記形状の光検出素子を作るためには長方形の光検出板
を製作した後、斜めに２等分して切断する加工が必要で
ある。しかし、このような加工処理は、機械的に強度の
弱い狭い部分が欠けてしまうおそれがあり、その製造が
困難であった。By the way, in order to realize the sun sensor having the above-described structure, it is necessary to form a photo-detecting element having a side oblique to the slit. On the other hand, the industrially easy shape is a circle, a quadrangle or a rectangle. Therefore,
In order to manufacture the photodetection element having the above-mentioned shape, it is necessary to manufacture a rectangular photodetection plate and then diagonally divide it into two equal parts. However, such a processing is difficult to manufacture because there is a possibility that a narrow portion having mechanically weak strength may be chipped.
（発明が解決しようとする課題） 以上述べたように従来の太陽センサでは、光検出素子
の製作時に、光検出板の遮光切断が必要であり、その加
工処理が困難であった。(Problems to be Solved by the Invention) As described above, in the conventional sun sensor, it is necessary to cut the light-detecting plate from light when the light-detecting element is manufactured, which makes the processing difficult.
この発明は上記の課題を解決するためになされたもの
で、加工が容易でかつ機械的強度も強い光検出素子を備
えた太陽センサを提供することを目的とする。The present invention has been made to solve the above problems, and an object of the present invention is to provide a sun sensor including a photodetector which is easy to process and has high mechanical strength.
［発明の構成］ （課題を解決するための手段） 上記目的を達成するためにこの発明に係る太陽センサ
は、互いに同一の多角形状で同一面積を有し、互いに対
応する一辺が近接して平行になるように配置される一対
の光検出素子と、この一対の光検出素子の受光面上に設
けられ、前記一対の光検出素子の互いに平行な近接辺の
中間点で斜めに交差するようにスリットが形成される遮
光板とを具備し、前記一対の光検出素子の各受光面上に
それぞれ光を透過しない電極層を一部残して形成し、そ
の電極層未形成部分は前記互いに平行な近接辺に平行な
辺及び前記スリット形成方向に垂直な辺を有する多角形
状としたことを特徴とする。[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the sun sensors according to the present invention have the same polygonal shape and the same area. And a pair of photo-detecting elements that are arranged so that they are provided on the light-receiving surfaces of the pair of photo-detecting elements so as to intersect diagonally at the midpoints of the adjacent parallel sides of the pair of photo-detecting elements. A light-shielding plate in which a slit is formed, and an electrode layer that does not transmit light is formed on each of the light-receiving surfaces of the pair of photodetector elements, and part of the electrode layer is not formed. It is characterized in that it has a polygonal shape having a side parallel to the adjacent side and a side perpendicular to the slit forming direction.
（作用） 上記構成による太陽センサでは、一対の光検出素子を
互いに同一の四角形または長方形等の多角形状で同一面
積を有する一対の光検出素子を用意し、互いに対応する
一辺が近接して平行になるように配置する。この一対の
光検出素子の受光面上には、一対の光検出素子の互いに
平行な近接辺の中間点で斜めに交差するようにスリット
が形成される遮光板を配置する。また、一対の光検出素
子の各受光面上にはそれぞれ光を透過しない電極層を一
部残して形成し、その電極層未形成部分は互いに平行な
近接辺に平行な辺及びスリット形成方向に垂直な辺を有
する多角形状とする。すなわち、この電極層未形成部分
がスリットを透過した光の受光部となり、各光検出素子
の出力差または比を求めることによって太陽光の入射角
を求める。(Operation) In the sun sensor having the above-described configuration, a pair of photodetection elements are prepared as a pair of photodetection elements having the same polygonal shape such as a quadrangle or a rectangle and having the same area, and one side corresponding to each other is parallel and close to each other. Arrange so that On the light-receiving surface of the pair of photodetector elements, a light shielding plate having a slit is arranged so as to obliquely intersect at the midpoint of the parallel sides of the pair of photodetector elements. Further, an electrode layer that does not transmit light is formed on each of the light receiving surfaces of the pair of photodetector elements while leaving a part thereof, and the electrode layer unformed portion is formed in the side parallel to the adjacent side and the slit forming direction. It has a polygonal shape with vertical sides. That is, the portion where the electrode layer is not formed serves as a light receiving portion for the light transmitted through the slit, and the incident angle of sunlight is obtained by obtaining the output difference or ratio of each photodetecting element.
（実施例） 以下、第１図乃至第４図を参照してこの発明の一実施
例を説明する。(Embodiment) An embodiment of the present invention will be described below with reference to FIG. 1 to FIG.
第１図はその構成を示すもので、21は遮蔽板、22は遮
蔽板21に形成されたスリットである。遮蔽板21の下部に
は第１及び第２の光検出板23,24が配置される。第１及
び第２の光検出板23,24は、共に正方形で同一受光面積
を有するシリコン太陽電池板を用い、第２図に示すよう
に、太陽電池板ａの受光面上を一部マスクしてアルミ蒸
着することによってアルミ電極層ｂを形成したものであ
る。電極層ｂの未形成部分ｃは斜辺が板ａの一辺に平行
する台形の形状とする。この部分は受光部となる。FIG. 1 shows the structure, and 21 is a shield plate and 22 is a slit formed in the shield plate 21. First and second photodetector plates 23 and 24 are disposed below the shield plate 21. The first and second photodetector plates 23 and 24 are both silicon solar cell plates having a square shape and the same light receiving area. As shown in FIG. 2, a part of the light receiving surface of the solar cell plate a is masked. The aluminum electrode layer b is formed by aluminum vapor deposition. The unformed portion c of the electrode layer b has a trapezoidal shape in which the hypotenuse is parallel to one side of the plate a. This part becomes a light receiving part.
すなわち、一般的な太陽電池は、第３図に示すよう
に、ｎ型シリコン層Ａの受光面から裏面にかけて極薄い
ｐ型シリコン層Ｂを形成してpn接合で光電変換できるよ
うにし、その側面及び裏面にそれぞれ正電極Ｃ及び負電
極Ｄを形成している。また、受光面の表面積が大きくな
ると効率が悪いので、第４図に示すように太陽電池Ｅの
受光面上に電極Ｆを櫛形に形成する方法がよく用いられ
る。したがって、以上の従来技術を用いれば、第２図に
示す光検出板は実現可能である。That is, in a general solar cell, as shown in FIG. 3, an extremely thin p-type silicon layer B is formed from the light-receiving surface to the back surface of the n-type silicon layer A so that photoelectric conversion can be performed by a pn junction, and the side surface thereof is formed. A positive electrode C and a negative electrode D are formed on the back surface and the back surface, respectively. Further, since the efficiency is poor when the surface area of the light receiving surface is large, a method of forming the electrode F in a comb shape on the light receiving surface of the solar cell E as shown in FIG. 4 is often used. Therefore, the photodetection plate shown in FIG. 2 can be realized by using the above conventional technique.
第１及び第２の光検出板23,24は受光部ｃの斜辺が互
いに平行するように、かつその斜辺の中央でスリット22
が交差するように配置される。この配置関係によって、
遮蔽板21に太陽光Ｓが垂直に入射されたとき、各光検出
板23,24の受光部ｃには均等にスリット透過光が入射さ
れるためその検出出力は等しくなり、太陽光Ｓの入射角
に応じてその差あるいは比が増減する。The first and second photodetector plates 23 and 24 are arranged so that the oblique sides of the light receiving portion c are parallel to each other and the slit 22 is provided at the center of the oblique sides.
Are arranged so that they intersect. By this arrangement relationship,
When the sunlight S is vertically incident on the shield plate 21, the slit transmitted light is evenly incident on the light receiving portions c of the photodetection plates 23 and 24, so that the detection outputs thereof are equal and the incidence of the sunlight S is incident. The difference or ratio increases or decreases depending on the angle.
したがって、上記構成の太陽センサは、正方形の太陽
電池板をそのまま使用して、受光部分のみをフォトマス
ク処理によって形成しているので、加工が容易でかつ機
械的強度も強く、しかも従来と同様に太陽光Ｓの入射角
を求めることができる。Therefore, in the solar sensor having the above-mentioned configuration, since the square solar cell plate is used as it is, and only the light receiving portion is formed by the photomask process, the processing is easy and the mechanical strength is strong, and moreover, it is the same as the conventional one. The incident angle of the sunlight S can be calculated.
尚、上記実施例では太陽電池板として正方形のものを
用いたが、長方形等の多角形状のものでもよい。また、
受光部は台形に限らず、三角形等の他の多角形でもよい
ことは勿論である。Although the square solar cell plate is used in the above embodiment, it may be polygonal such as rectangular. Also,
Of course, the light receiving portion is not limited to the trapezoid and may be another polygon such as a triangle.
［発明の効果］ 以上のようにこの発明によれば、加工が容易でかつ機
械的強度も強い太陽センサを提供することができる。[Advantages of the Invention] As described above, according to the present invention, it is possible to provide a sun sensor that is easily processed and has high mechanical strength.
第１図はこの発明に係る太陽センサの一実施例を示す斜
視図、第２図は同実施例の光検出板の構造を示す断面
図、第３図及び第４図はそれぞれ同実施例の太陽電池板
を実現する方法を説明するための図、第５図は従来の太
陽センサの構成を示す斜視図である。 11……スリット、12……遮蔽板、13,14……光検出素
子、Ｓ……太陽光、21……遮蔽板、22……スリット、2
3,24……第１、第２の光検出板、ａ……太陽電池板、ｂ
……アルミ電極層、ｃ……受光部。FIG. 1 is a perspective view showing an embodiment of the sun sensor according to the present invention, FIG. 2 is a sectional view showing the structure of the photodetector plate of the same embodiment, and FIGS. 3 and 4 are views of the same embodiment, respectively. FIG. 5 is a diagram for explaining a method for realizing a solar cell plate, and FIG. 5 is a perspective view showing a configuration of a conventional sun sensor. 11 …… slit, 12 …… shielding plate, 13,14 …… photodetector, S …… sunlight, 21 …… shielding plate, 22 …… slit, 2
3,24 ... First and second photodetector plates, a ... Solar cell plate, b
…… Aluminum electrode layer, c …… Light receiving part.
Claims (1)
互いに対応する一辺が近接して平行になるように配置さ
れる一対の光検出素子と、この一対の光検出素子の受光
面上に設けられ、前記一対の光検出素子の互いに平行な
近接辺の中間点で斜めに交差するようにスリットが形成
される遮光板とを具備し、前記一対の光検出素子の各受
光面上にそれぞれ光を透過しない電極層を一部残して形
成し、その電極層未形成部分は前記互いに平行な近接辺
に平行な辺及び前記スリット形成方向に垂直な辺を有す
る多角形状としたことを特徴とする太陽センサ。1. The same polygonal shape having the same area,
A pair of photodetector elements arranged so that one side corresponding to each other is close and parallel to each other, and a pair of photodetector elements provided on the light-receiving surface of the pair of photodetection elements A light-shielding plate in which slits are formed so as to diagonally intersect at an intermediate point, and an electrode layer that does not transmit light is formed on each light-receiving surface of the pair of photodetector elements, and the electrode is formed. The sun sensor, wherein the layer-unformed portion has a polygonal shape having a side parallel to the mutually adjacent side and a side perpendicular to the slit forming direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1121214A JP2672643B2 (en) | 1989-05-15 | 1989-05-15 | Sun sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1121214A JP2672643B2 (en) | 1989-05-15 | 1989-05-15 | Sun sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02300626A JPH02300626A (en) | 1990-12-12 |
| JP2672643B2 true JP2672643B2 (en) | 1997-11-05 |
Family
ID=14805703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1121214A Expired - Fee Related JP2672643B2 (en) | 1989-05-15 | 1989-05-15 | Sun sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2672643B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230194338A1 (en) * | 2021-12-22 | 2023-06-22 | National Yang Ming Chiao Tung University | Device and method for detecting a light irradiating angle |
-
1989
- 1989-05-15 JP JP1121214A patent/JP2672643B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230194338A1 (en) * | 2021-12-22 | 2023-06-22 | National Yang Ming Chiao Tung University | Device and method for detecting a light irradiating angle |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02300626A (en) | 1990-12-12 |
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