JP2670832B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a large-scale semiconductor device represented by wafer-scale integration (hereinafter referred to as WSI) and a method for manufacturing the same.

[Conventional technology]

2A to 2E are process explanatory views showing a conventional method of manufacturing a WSI semiconductor device. The conventional manufacturing method is roughly divided into four steps. Hereinafter, description will be given with reference to this figure.

First, FIG. 3A shows the configuration of the WSI semiconductor device. The WSI semiconductor device is composed of RAM 1a, ROM 1b, CPU 1c, I / O 1d and redundant circuit 14. In this case, since chips are manufactured on a wafer scale, only a small number of defects (eg,
Crystal defects caused by semiconductor materials, defects in manufacturing processes typified by foreign substances, etc.) are fatal. Therefore, the redundant circuit 14 that enables the restoration of the function after the wafer process is performed.
Is required. Therefore, the redundant circuit 14 is sufficiently taken into consideration in the circuit design.

The figure (b) has shown the pattern data 2 of each circuit in the figure (a). In this way, each data is collectively processed.

FIG. 3C shows formation of elements and wirings by a wafer process. At this stage, elements and wirings are formed before the passivation step by using the same wafer process as that for forming a normal semiconductor chip on the wafer 3.

FIG. 3D shows defect detection and function repair by the wafer test. A defective portion is detected by the wafer test, and the function is restored by using the actual redundant circuit 15 on the wafer 3. In this case, the repair can be performed by cutting a fuse provided on the circuit with a laser beam (symbol A), or by using a laser beam and a reactive gas containing metal atoms to connect the redundant circuit 15 (symbol B). It is done by doing.

FIG. 3E shows the formation and assembly of the passivation film 11. After forming the passivation film 11 on the entire surface of the wafer chip, it is fixed to a package such as ceramic. Next, the external electrode 6 and the pad electrode on the chip are connected by using a wire bonding method or the like, and finally the package is sealed. Reference numeral 5 is a chip support substrate, 8 is a pin, 12 is a bonding wire, and 13 is a front cover for a package.

[Problems to be solved by the invention]

Since the conventional semiconductor device and the manufacturing method thereof are configured as described above, a redundant circuit for avoiding a defect in a wafer is required, and the circuit design is limited. Therefore, it is difficult to apply it to a logic circuit such as a random logic.

In addition, in the case of having a high-density and fine circuit pattern, there are many cases where the number of defects is so large that repair cannot be completely performed with a redundant circuit, and the yield is low.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described drawbacks, and an object of the present invention is to provide a WSI semiconductor device which allows flexible circuit design and has a high yield.

[Means for solving the problem]

A semiconductor device according to the present invention is provided with a semiconductor chip supporting substrate for supporting a semiconductor chip, and is disposed so as to be spread over the semiconductor chip supporting substrate, and is made of the same or different types of semiconductor chip materials and has an internal function of each semiconductor device. Having a circuit block, an insulating resin embedded in a gap between the circuit blocks, a metal wiring formed between the circuit blocks through the insulating resin, and a metal wiring on the entire circuit block including the metal wiring. The formed passivation film and the wire wiring for connecting the external electrode provided on the semiconductor chip supporting substrate and the metal wiring on the circuit block are provided.

Further, a method of manufacturing a semiconductor device according to the present invention includes the steps of: forming a plurality of internal functions in a semiconductor device into functional blocks; forming a circuit block by using a semiconductor wafer process for each semiconductor substrate; A step of testing a substrate and selecting a non-defective circuit block; a step of etching the dicing line of the circuit block in a tapered shape; cutting out a non-defective circuit block and, if necessary, cutting a cut surface of the cut out circuit block. Polishing, laying down circuit blocks on a semiconductor chip support plate and fixing them, filling gaps between circuit blocks with a resin, forming metal wiring between the circuit blocks via a resin, The process of forming the passivation film except the metal pad on the block and the circuit block And a step of connecting wires and the external electrodes of the metal pad and the semiconductor chip support substrate on click.

(Operation)

Each function of the semiconductor device is divided into blocks, each of which is independently designed and manufactured, and only non-defective blocks are taken out to configure the semiconductor device.

〔Example〕

Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIGS. 1A to 1J are process explanatory diagrams of a manufacturing process in a WSI semiconductor device showing an embodiment of the present invention. In this embodiment, the case of a one-chip microcomputer will be described.

First, FIG. 1A shows a structural block of a semiconductor device. Each block is roughly divided into RAM1a, ROM1b, CPU1
It consists of c and I / O 1d blocks. These can be divided into smaller blocks for design and manufacturing.

In FIG. 3B, a circuit and a pattern are designed for each block and converted into pattern data 2a to 2d for the semiconductor wafer process. It should be noted that each finished block size is standardized to a fixed size or a combination thereof.

In FIG. 3C, elements and wirings in the block are formed on the wafer by using a normal semiconductor wafer process for each circuit block. Each of the wafers 3a to 3c may use the same type of wafer (for example, silicon),
Heterogeneous wafers (eg, gallium arsenide) may be included. At this time, the pattern data 2a to 2d are transferred to the wafers 3a to 3d.
However, since the device structures and the fineness of the circuit patterns are different, the yield of each formed block also differs accordingly. For example, RAM3a, ROM3b, etc. have a poor yield because they are in the submicron region even in the circuit lines.

Next, in FIG. 3D, a wafer test is performed for each chip of the wafers 3a to 3d, and only non-defective circuit blocks 4 (4a to 4d) corresponding to the wafers 3a to 3d are cut out. Here, since the number of each circuit block required for the chip of the semiconductor device is known (for example, 9 for 4a and 1 for 4b).
, 4c is 6 and 4d is 6), the number of wafers to be loaded is set in accordance with the yield of each circuit block, and good circuit blocks are obtained without waste. At the end of the wafer process, the block boundary is isotropically etched using the resist as a mask, or the block edge is tapered by cutting and cutting the edge.

Then, in FIG. 6 (e), the non-defective bits cut out
4a to 4d (22 pieces) are spread and fixed on the chip support substrate 5. For example, an epoxy resin is used as the adhesive.

FIG. 6F is a sectional view taken along the line I-I in FIG. Here, reference numeral 6 denotes a sea electrode on the support substrate, which is connected through pins 8 and the support substrate 5 for mounting.
The non-defective blocks 4a to 4d are spread all over the supporting substrate 5, but have a strictly 100 μm gap due to the taper of the block edge or the like.

In FIG. 6G, the gap between the circuit blocks is filled with the polyimide resin 7. As a filling method, a method of filling polyimide on the entire surface of the block and etching back using reactive dry etching is generally used.

Next, in FIGS. 3H and 3I, inter-block wiring 9 is performed. At the same time, a bonding pad 10 used for wiring with the external electrode 6 is formed. For the inter-block wiring, a direct wiring method using a laser CVD method or focused ion beam deposition, or a lift-off wiring method using resist patterning by direct electron beam drawing is used. This is because these methods enable patterning while detecting the positional deviation when the blocks are spread.

Finally, in FIG. 7J, passivation, wire bonding and packaging are performed. In the figure, 11 is a passivation nitride film, 12 is a bonding wire, and 13 is a package front cover. The passivation nitride film covering the bonding pad 10 and the polyimide film and the nitride film covering the external electrode 6 are removed by wet or dry etching using a resist as a mask.

In the above embodiment, a single-layer wiring is used for the inter-block wiring. However, when one or more blocks are interposed between the blocks to be connected, a multi-layer wiring may be formed using an interlayer insulating film.

As described above, the semiconductor device and the method of manufacturing the semiconductor device according to the present embodiment are constructed such that the function of the WSI semiconductor chip is divided into blocks, each of them is independently designed and manufactured, and only good blocks are taken out and laid. It is not necessary to incorporate a circuit, flexible design is possible, and a semiconductor device with high yield can be obtained.

Further, since the gaps between the blocks are filled with the resin, there is an effect that fine and highly reliable inter-block wiring can be obtained as in the normal wafer process.

〔The invention's effect〕

As described above, the semiconductor device and the method of manufacturing the same according to the present invention are designed so that each function of the semiconductor device is blocked and independently designed and manufactured, and only non-defective blocks are taken out and spread. There is an effect that a semiconductor device having a high yield can be obtained because it is not necessary to incorporate the semiconductor device, flexible design is possible.

[Brief description of the drawings]

1 (a) to 1 (j) are process explanatory diagrams of a manufacturing process in a WSI semiconductor device showing one embodiment of the present invention, and FIG. 2 (a).
(E) is process explanatory drawing which shows the manufacturing method of the conventional WSI semiconductor device. 4a to 4d: good circuit block, 5: chip support substrate, 6: external electrode, 7: polyimide resin, 8: pin, 9: wiring between blocks, 10: bonding pad, 11 ... Passivation nitride film, 12 …… bonding wire, 13 …… package cover, 14 …… redundant circuit.

Claims (2)

(57) [Claims] 1. A semiconductor device comprising a plurality of circuit blocks, comprising: a semiconductor chip supporting substrate for supporting a semiconductor chip; and a semiconductor chip material of the same kind or different kind which is arranged to be spread on the semiconductor chip supporting substrate. A circuit block having an internal function of each of the semiconductor devices; an insulating resin embedded in a gap between the circuit blocks; a metal wiring formed between the circuit blocks via the insulating resin; A semiconductor comprising: a passivation film including a metal wiring and formed on all circuit blocks; and a wire wiring for connecting an external electrode provided on the semiconductor chip support substrate and a metal wiring on the circuit block. apparatus. 2. A method of manufacturing a semiconductor device comprising a plurality of circuit blocks, wherein a plurality of internal functions in the semiconductor device are divided into respective functions, and the divided circuit blocks are formed on a semiconductor substrate by using a semiconductor wafer process. Forming a non-defective circuit block, testing the semiconductor substrate to select a non-defective product of the circuit block, etching a dicing line of the circuit block in a tapered shape, cutting out the non-defective circuit block, and A step of obliquely polishing a cut surface of the circuit block cut out accordingly, a step of spreading and fixing the circuit block on a semiconductor chip support plate, and a step of embedding a gap between the circuit blocks with a resin; Forming a metal wiring through the resin, and Forming a passivation film excluding a metal pad on the circuit block; and connecting and connecting a metal pad on the circuit block to an external electrode on a semiconductor chip supporting substrate. Production method.