JP2653172B2 - Artificial diamond coated tungsten carbide based cemented carbide cutting inserts - Google Patents
Artificial diamond coated tungsten carbide based cemented carbide cutting insertsInfo
- Publication number
- JP2653172B2 JP2653172B2 JP14350389A JP14350389A JP2653172B2 JP 2653172 B2 JP2653172 B2 JP 2653172B2 JP 14350389 A JP14350389 A JP 14350389A JP 14350389 A JP14350389 A JP 14350389A JP 2653172 B2 JP2653172 B2 JP 2653172B2
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- JP
- Japan
- Prior art keywords
- artificial diamond
- forming component
- based cemented
- cutting
- phase forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Cutting Tools, Boring Holders, And Turrets (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、人工ダイヤモンド被覆層の炭化タングス
テン（以下WCで示す）基超硬合金基体に対する密着性が
著しく高く、特にAlおよびAl合金やCuおよびCu合金など
の非鉄金属の仕上げ切削などの送りや切り込みの小さい
軽切削に用いた場合に高速切削でもすぐれた切削性能を
発揮する人工ダイヤモンド被覆WC基超硬合金製切削チッ
プに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention provides an artificial diamond coating layer having remarkably high adhesion to a tungsten carbide (hereinafter referred to as WC) -based cemented carbide substrate, particularly Al and Al alloys and Cu alloys. Also, the present invention relates to an artificial diamond-coated WC-based cemented carbide cutting tip that exhibits excellent cutting performance even at high speeds when used for small cutting and small cutting such as finishing cutting of a non-ferrous metal such as a Cu alloy.
従来、一般に、上記の非鉄金属の軽切削には、 結合相形成成分としてCo:1〜15％、 分散相形成成分として炭化チタン（以下TiCで示す）
および炭化タンタル（以下TaCで示す）のうちの１種ま
たは２種:0.1〜２％、 を含有し、残りが同じく分散相形成成分としてのWCと不
可避不純物からなる組成（以上容量％、以下％は容量％
を示す）を有するWC基超硬合金基体の表面に、例えば特
開昭58−91100号公報に記載される熱電子放射材法や、
特開昭58−135117号公報に記載される高周波プラズマ放
電法、さらに特開昭58−110494号公報に記載されるマイ
クロ波プラズマ放電法などの通常の気相合成法にて人工
ダイヤモンド被覆層を0.5〜20μｍの平均層厚で形成し
てなる人工ダイヤモンド被覆WC基超硬合金製切削チップ
が用いられている。Conventionally, in general, for light cutting of the above nonferrous metals, Co: 1 to 15% as a binder phase forming component, and titanium carbide (hereinafter referred to as TiC) as a dispersed phase forming component.
And one or two of tantalum carbide (hereinafter, referred to as TaC): 0.1 to 2%, and the remainder is also composed of WC as a dispersed phase forming component and unavoidable impurities (more than volume%, less than% Is volume%
On the surface of a WC-based cemented carbide substrate having, for example, thermionic emission method described in JP-A-58-91100,
An artificial diamond coating layer is formed by a normal gas phase synthesis method such as a high-frequency plasma discharge method described in JP-A-58-135117 and a microwave plasma discharge method described in JP-A-58-110494. An artificial diamond-coated WC-based cemented carbide cutting tip formed with an average layer thickness of 0.5 to 20 μm is used.
一方、近年の切削作業の省力化に伴ない、切削速度も
一段と高速化する傾向にあるが、上記の従来人工ダイヤ
モンド被覆WC基超硬合金製切削チップでは、これを上記
の非鉄金属の軽切削に速い切削速度で使用した場合、基
体表面に対する人工ダイヤモンド被覆層の密着強度が十
分でないために、被覆層剥離やこれが原因のチッピング
が発生し、比較的短時間で使用寿命に至るのが現状であ
る。On the other hand, with the recent labor saving of cutting work, the cutting speed has also tended to be further increased, but with the above-mentioned conventional artificial diamond coated WC-based cemented carbide cutting insert, When used at high cutting speeds, the adhesion strength of the artificial diamond coating layer to the substrate surface is not sufficient, causing peeling of the coating layer and chipping due to this, resulting in a relatively short service life. is there.
そこで、本発明者等は、上述のような観点から、人工
ダイヤモンド被覆層のWC基超硬合金基体に対する密着性
のすぐれた切削チップを開発すべく研究を行った結果、 結合相形成成分としてCo:0.9〜13.5％、 分散相形成成分としてTiCおよびTaCのうちの１種また
は２種:0.1〜２％、 同じく分散相形成成分として、例えばCo3W7Cからなる
イーダ相などのCoとＷとＣの化合物（以下Co−Ｗ−Ｃ化
合物で示す）:0.2〜20％、を含有し、残りが同じく分散
相形成成分としてのWCと不可避不純物からなるWC基超硬
合金基体を用意し、このWC基超硬合金基体の表面に、上
記通常の気相合成法を用いて、人工ダイヤモンド被覆層
の形成を行なうと、人工ダイヤモンド被覆層形成時に、
雰囲気から基体表面に析出したＣ成分が基体素地中に分
散するCo−Ｗ−Ｃ化合物と反応して、CoとWCを形成し、
この反応によって、基体表面部には、 結合相形成成分としてCo:1〜15％ 分散相形成成分としてTiCおよびTaCのうちの１種また
は２種:0.1〜２％、 を含有し、残りが同じく分散相形成成分としてのWCと不
可避不純物からなる組成を有するCo−Ｗ−Ｃ化合物の存
在しない表面反応層が形成されるようになるが、この間
に基体表面に同時に析出して結晶化した人工ダイヤモン
ド被覆層は上記の反応によって基体表面に対して密着性
が著しく向上するようになるという知見を得たのであ
る。In view of the above, the present inventors conducted research to develop a cutting tip having excellent adhesion of an artificial diamond coating layer to a WC-based cemented carbide substrate, and as a result, Co : 0.9 to 13.5%, one or two of TiC and TaC as dispersed phase forming components: 0.1 to 2%, and Co and W such as an ida phase composed of, for example, Co 3 W 7 C as dispersed phase forming components. And a compound of C (hereinafter referred to as a Co-WC compound): 0.2 to 20%, and the rest is also prepared a WC-based cemented carbide substrate composed of WC as a disperse phase forming component and inevitable impurities, When the artificial diamond coating layer is formed on the surface of the WC-based cemented carbide substrate using the above-described ordinary vapor phase synthesis method, when the artificial diamond coating layer is formed,
The C component precipitated on the substrate surface from the atmosphere reacts with the Co-WC compound dispersed in the substrate matrix to form Co and WC,
As a result of this reaction, the surface of the substrate contains, as a binder phase forming component, Co: 1 to 15%, and one or two of TiC and TaC: 0.1 to 2% as a dispersing phase forming component, and the remainder is the same. A surface reaction layer free of a Co-WC compound having a composition consisting of WC as a disperse phase-forming component and unavoidable impurities is formed. During this time, an artificial diamond crystallized simultaneously on the substrate surface by precipitation. It has been found that the above-mentioned reaction significantly improves the adhesion of the coating layer to the substrate surface.
この発明は、上記知見にもとづいてなされたものであ
って、 表面に平均層厚で0.5〜20μｍの人工ダイヤモンド被
覆層を形成してなるWC基超硬合金基体の表面部に、平均
層厚が１〜20μｍの表面反応層が存在し、かつ前記表面
反応層が、 結合相形成成分としてCo:1〜15％、 分散相形成成分としてTiCおよびTaCのうちの１種また
は２種:0.1〜２％、 を含有し、残りが同じく分散相形成成分としてのWCと不
可避不純物からなる組成を有し、さらに上記基体本体
が、 結合相形成成分としてCo:0.9〜13.5％、 分散相形成成分としてTiCおよびTaCのうちの１種また
は２種:0.1〜２％、 分散相形成成分としてCo−Ｗ−Ｃ化合物:0.2〜20％、 を含有し、残りが同じく分散相形成成分としてのWCと不
可避不純物からなる組成を有してなる人工ダイヤモンド
被覆WC基超硬合金製切削チップに特徴を有するものであ
る。The present invention has been made based on the above findings, and has an average layer thickness on the surface of a WC-based cemented carbide substrate having an artificial diamond coating layer having an average layer thickness of 0.5 to 20 μm formed on the surface. A surface reaction layer having a thickness of 1 to 20 μm, and the surface reaction layer comprises: Co: 1 to 15% as a binder phase forming component; and one or two of TiC and TaC as a dispersed phase forming component: 0.1 to 2 %, And the remainder has the same composition as WC as a dispersed phase-forming component and unavoidable impurities. Further, the base body further comprises Co: 0.9 to 13.5% as a binding phase-forming component, and TiC as a dispersed phase-forming component. And one or two of TaC: 0.1 to 2%, Co-WC compound: 0.2 to 20% as a disperse phase-forming component, and the rest are also WC and inevitable impurities as a disperse phase-forming component Made of WC-based cemented carbide coated with artificial diamond having composition consisting of Those having features on the chip.
つぎに、この発明の切削チップにおいて、上記の通り
に数値限定した理由を説明する。Next, the reasons for limiting the numerical values of the cutting insert of the present invention as described above will be described.
A.基体本体および表面反応層の成分組成 （ａ） Co含有量 基体本体のCo含有量が0.9％未満では所望の靭性を確
保することができず、一方その含有量が13.5％を越える
と、硬さが低下し、耐摩耗性が低下するようになること
から、基体本体のCo含有量を0.9〜13.5％にしなければ
ならない。また、この場合、表面反応層のCo含有量は、
人工ダイヤモンド被覆層の形成時に基体表面から内部に
拡散したＣ成分が基体中に分散含有するCo−Ｗ−Ｃ化合
物と反応してCoとWCを形成し、この反応生成Coが増加分
となることから、基体本体のそれより相対的に多い１〜
15％となるものである。A. Component Composition of Base Body and Surface Reaction Layer (a) Co Content If the Co content of the base body is less than 0.9%, desired toughness cannot be ensured. On the other hand, if the content exceeds 13.5%, Since the hardness decreases and the abrasion resistance decreases, the Co content of the base body must be 0.9 to 13.5%. In this case, the Co content of the surface reaction layer is:
The C component diffused from the substrate surface to the inside during the formation of the artificial diamond coating layer reacts with the Co-WC compound dispersedly contained in the substrate to form Co and WC, and the amount of Co produced by the reaction increases. From 1 to relatively more than that of the base body
15%.
（ｂ） TiCおよびTaC これらの成分には、基体本体および表面反応層とも分
散層を形成してチップの硬さを高め、耐摩耗性を向上さ
せる作用があるが、その含有量が0.1％未満では所望の
耐摩耗性向上効果が得られず、一方その含有量が２％を
越えると靭性が急激に低下するようになることから、そ
の含有量を0.1〜２％と定めた。(B) TiC and TaC These components have a function of forming a dispersion layer on both the base body and the surface reaction layer to increase the hardness of the chip and improve the wear resistance, but the content is less than 0.1%. In this case, the desired effect of improving wear resistance cannot be obtained. On the other hand, if the content exceeds 2%, the toughness rapidly decreases, so the content is set to 0.1 to 2%.
（ｃ） Co−Ｗ−Ｃ化合物 基体本体におけるCo−Ｗ−Ｃ化合物は、分散相を形成
し、上記の通り人工ダイヤモンド被覆層形成時に基体表
面から拡散したＣ成分と反応して、WCとCoになるが、こ
の反応によって基体表面が著しく活性化し、基体表面に
形成される人工ダイヤモンド被覆層の密着性を一段と向
上させる作用があるが、その含有量が0.2％未満では、
基体表面活性化が不十分で、人工ダイヤモンド被覆層に
強固な密着性を確保することができず、一方その含有量
が20％を越えると、切削チップ自体の靭性が急激に低下
するようになることから、基体本体におけるCo−Ｗ−Ｃ
化合物の含有量を0.2〜20％と定めた。(C) Co-WC compound The Co-WC compound in the main body of the substrate forms a dispersed phase, reacts with the C component diffused from the surface of the substrate during formation of the artificial diamond coating layer as described above, and forms WC and Co. However, this reaction significantly activates the surface of the substrate, and has an effect of further improving the adhesion of the artificial diamond coating layer formed on the surface of the substrate, but if the content is less than 0.2%,
Insufficient activation of the substrate surface makes it impossible to ensure strong adhesion to the artificial diamond coating layer. On the other hand, if the content exceeds 20%, the toughness of the cutting tip itself rapidly decreases. Therefore, Co-WC in the substrate body
The compound content was determined to be 0.2-20%.
B.表面反応層の平均層厚 その厚さが１μｍ未満では、基体表面と人工ダイヤモ
ンド被覆層との間に強固な密着性を確保することができ
ず、一方その厚さを20μｍを越えて厚くすることは、人
工ダイヤモンド被覆層の最大厚さが20μｍと制限されて
いることと合まって不可能であることから、その平均層
厚を１〜20μｍと定めた。B. Average layer thickness of the surface reaction layer If the thickness is less than 1 μm, strong adhesion between the substrate surface and the artificial diamond coating layer cannot be secured, while the thickness exceeds 20 μm. Since the maximum thickness of the artificial diamond coating layer is limited to 20 μm, it is impossible to do so. Therefore, the average layer thickness is set to 1 to 20 μm.
C.人工ダイヤモンド被覆層の平均層厚 その厚さが0.5μｍ未満では所望の耐摩耗性向上効果
が得られず、一方その含有量が20μｍを越えると、被覆
層自体にチッピングが発生し易くなって、所望の切削寿
命を確保するのが困難となることから、その厚さを0.5
〜20μｍと定めた。C. Average layer thickness of artificial diamond coating layer If the thickness is less than 0.5 μm, the desired effect of improving wear resistance cannot be obtained, while if the content exceeds 20 μm, chipping tends to occur in the coating layer itself. Therefore, it is difficult to secure the desired cutting life,
2020 μm.
なお、この発明の切削チップを構成する基体は、WC基
超硬合金を製造するのに用いられる通常の原料粉末のほ
かに、Ｗ粉末を用いることにより製造することができ
る。The substrate constituting the cutting tip of the present invention can be manufactured by using W powder in addition to the usual raw material powder used for manufacturing a WC-based cemented carbide.
つぎに、この発明の切削チップを実施例により具体的
に説明する。Next, the cutting insert of the present invention will be specifically described with reference to examples.
原料粉末として、いずれも0.3〜５μｍの範囲内の平
均粒径を有するWC粉末、TiC粉末、TaC粉末、Ｗ粉末、お
よびCo粉末を用意し、これら原料粉末を第１表に示され
る配合組成に配合し、ボールミルで72時間湿式混合し、
乾燥した後、10kg/mm2の圧力で圧粉体に成形し、ついで
真空中、1350〜1500℃の範囲内の所定温度に１時間保持
の条件で焼結して、同じく第１表に示される成分組成を
もったWC基超硬合金基体を製造し、引続いて、熱電子放
射材法を用い、 反応容器：外径120mmの石英管、 反応混合ガス組成：容量割合で、CH4/H2＝5/1000、 熱電子放射材（Ｗ製フィラメント）と基体表面との距
離:15〜35mm、 反応容器内雰囲気圧力:10〜50torr、 熱電子放射材の加熱温度:2000℃、 基体表面加熱温度:700〜1000℃、 の条件で人工ダイヤモンド被覆層を形成することにより
SPGN422の形状を有する本発明切削チップ１〜７および
従来切削チップ１〜７をそれぞれ製造した。As raw material powders, WC powder, TiC powder, TaC powder, W powder, and Co powder each having an average particle diameter in the range of 0.3 to 5 μm are prepared, and these raw material powders are mixed in the composition shown in Table 1. Mix and wet mix for 72 hours in a ball mill,
After drying, it is formed into a green compact at a pressure of 10 kg / mm 2 , and then sintered in vacuum at a predetermined temperature in the range of 1350 to 1500 ° C. for 1 hour, as shown in Table 1. A WC-based cemented carbide substrate having the following component composition was manufactured, and subsequently, using a thermionic emission material method, a reaction vessel: a quartz tube having an outer diameter of 120 mm, and a reaction mixture gas composition: CH 4 / H 2 = 5/1000, distance between thermionic emitting material (filament made of W) and substrate surface: 15 to 35 mm, atmospheric pressure in reaction vessel: 10 to 50 torr, heating temperature of thermionic emitting material: 2000 ° C, substrate surface Heating temperature: 700 ~ 1000 ℃, by forming artificial diamond coating layer
Cutting chips 1 to 7 of the present invention and conventional cutting tips 1 to 7 having the shape of SPGN422 were manufactured, respectively.
つぎに、この結果得られた各種の切削チップについ
て、基体表面部に形成された表面反応層の組成および平
均層厚、さらに人工ダイヤモンド 被覆層の平均層厚を測定すると共に、 被削材:Al−12.5重量％Si合金、 切削速度:500m/min、 切り込み:1mm、 送 り:0.2mm/rev.、 の条件でのAl合金の高速仕上げ切削試験、並びに、 被削材:Cu−Be合金、 切削速度:180m/min、 切り込み:1mm、 送 り:0.2mm/rev.、 の条件でのCu合金の高速仕上げ切削試験を行ない、いず
れの場合も切刃の逃げ面摩耗幅が0.2mmに至るまでの切
削時間を測定すると共に、切刃の状況を観察した。Next, the composition and average layer thickness of the surface reaction layer formed on the surface of the substrate and the artificial diamond While measuring the average thickness of the coating layer, the work material: Al-12.5% by weight Si alloy, cutting speed: 500m / min, depth of cut: 1mm, feed: 0.2mm / rev. A high-speed finish cutting test and a high-speed finish cutting test of a Cu alloy under the following conditions: work material: Cu-Be alloy, cutting speed: 180 m / min, depth of cut: 1 mm, feed: 0.2 mm / rev. In each case, the cutting time until the flank wear width of the cutting edge reached 0.2 mm was measured, and the condition of the cutting edge was observed.
なお、WC基超硬合金基体の靭性は、イーダ相を存在す
る本発明切削チップ１〜７の方がこれの存在しない従来
切削チップ１〜７に比して劣るが、上記のように非鉄金
属の軽切削では、これが高速切削であっても、それほど
靭性が要求されないので、本発明切削チップ１〜７に靭
性不足が原因の欠損が発生することは皆無である。The toughness of the WC-based cemented carbide substrate is inferior in the cutting tips 1 to 7 of the present invention in which an ida phase is present as compared with the conventional cutting tips 1 to 7 in which this is not present. In light cutting, since high toughness does not require much toughness, the cutting tips 1 to 7 of the present invention never suffer from chipping due to insufficient toughness.
第１表に示される結果から、本発明切削チップ１〜７
は、いずれも人工ダイヤモンド被覆層形成時における基
体表面部のCo−Ｗ−Ｃ化合物のCoとWCへの生成反応によ
って基体表面の著しい活性化が進行し、基体表面に対す
る人工ダイヤモンド被覆層の密着性が著しく向上し、す
ぐれた切削性能を長期に亘って発揮するのに対して、従
来切削チップ１〜７は、安定な基体表面への人工ダイヤ
モンド被覆層の形成となるため、十分な密着強度が得ら
れず、この状態で高速切削を適用すると、被覆層に剥離
やこれが原因のチッピングが発生し、短かい使用寿命し
か示さないことが明らかである。From the results shown in Table 1, the cutting tips of the present invention 1 to 7
In any case, during the formation of the artificial diamond coating layer, the formation of the Co-WC compound on the substrate surface to the Co and WC promotes significant activation of the substrate surface, and the adhesion of the artificial diamond coating layer to the substrate surface Is significantly improved, and excellent cutting performance is exhibited over a long period of time. On the other hand, conventional cutting tips 1 to 7 form a stable artificial diamond coating layer on the surface of the substrate, and therefore have sufficient adhesion strength. Obviously, when high-speed cutting is applied in this state, it is clear that peeling and chipping due to the peeling occur in the coating layer and show only a short service life.
上述のように、この発明の切削チップは、WC基超硬合
金基体の表面に対する人工ダイヤモンド被覆層の密着性
がきわめて高いので、特に非鉄金属の軽切削に、速い切
削速度で用いた場合にも被覆層に剥離やチッピングの発
生なく、すぐれた切削性能を著しく長期に亘って発揮す
るなど工業上有用な特性を有するのである。As described above, the cutting tip of the present invention has an extremely high adhesion of the artificial diamond coating layer to the surface of the WC-based cemented carbide substrate, so even when used at a high cutting speed, particularly for light cutting of non-ferrous metals. The coating layer has industrially useful characteristics such as excellent cutting performance over a long period of time without peeling or chipping occurring.
Claims (1)
ヤモンド被覆層を形成してなる炭化タングステン基超硬
合金基体の表面部に、平均層厚で１〜20μｍの表面反応
層が存在し、かつ前記表面反応層が、 結合相形成成分としてCo:1〜15％、 分散相形成成分として炭化チタンおよび炭化タンタルの
うちの１種または２種:0.1〜２％、を含有し、残りが同
じく分散相形成成分としての炭化タングステンと不可避
不純物からなる組成を有し、さらに上記基体本体が、 結合相形成成分としてCo:0.9〜13.5％、 分散相形成成分として炭化チタンおよび炭化タンタルの
うちの１種または２種:0.1〜２％、 分散相形成成分としてCoとＷとＣの化合物:0.2〜20％、 を含有し、残りが同じく分散相形成成分としての炭化タ
ングステンと不可避不純物からなる組成（以上容量％）
を有することを特徴とする人工ダイヤモンド被覆炭化タ
ングステン基超硬合金製切削チップ。A surface reaction layer having an average layer thickness of 1 to 20 μm exists on the surface of a tungsten carbide-based cemented carbide substrate having an artificial diamond coating layer having an average layer thickness of 0.5 to 20 μm formed on the surface. And the surface reaction layer contains: Co: 1 to 15% as a binder phase forming component; and 0.1 to 2% of one or two of titanium carbide and tantalum carbide as a dispersed phase forming component; It also has a composition consisting of tungsten carbide as a dispersed phase forming component and unavoidable impurities, and further has the above-mentioned base body, wherein Co: 0.9 to 13.5% as a binding phase forming component, and titanium carbide and tantalum carbide as a dispersed phase forming component. One or two kinds: 0.1 to 2%, a compound of Co, W and C as a dispersed phase forming component: 0.2 to 20%, and the balance also comprising tungsten carbide as a dispersed phase forming component and unavoidable impurities (More capacity %)
A cutting tip made of tungsten carbide based cemented carbide coated with artificial diamond, characterized by having:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14350389A JP2653172B2 (en) | 1989-06-06 | 1989-06-06 | Artificial diamond coated tungsten carbide based cemented carbide cutting inserts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14350389A JP2653172B2 (en) | 1989-06-06 | 1989-06-06 | Artificial diamond coated tungsten carbide based cemented carbide cutting inserts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0310704A JPH0310704A (en) | 1991-01-18 |
| JP2653172B2 true JP2653172B2 (en) | 1997-09-10 |
Family
ID=15340241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14350389A Expired - Fee Related JP2653172B2 (en) | 1989-06-06 | 1989-06-06 | Artificial diamond coated tungsten carbide based cemented carbide cutting inserts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2653172B2 (en) |
-
1989
- 1989-06-06 JP JP14350389A patent/JP2653172B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0310704A (en) | 1991-01-18 |
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