JP2650974B2 - Inspection method for semiconductor integrated circuit - Google Patents

Inspection method for semiconductor integrated circuit

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Publication number
JP2650974B2
JP2650974B2 JP63197459A JP19745988A JP2650974B2 JP 2650974 B2 JP2650974 B2 JP 2650974B2 JP 63197459 A JP63197459 A JP 63197459A JP 19745988 A JP19745988 A JP 19745988A JP 2650974 B2 JP2650974 B2 JP 2650974B2
Authority
JP
Japan
Prior art keywords
inspection
item
integrated circuit
semiconductor integrated
stored
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63197459A
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Japanese (ja)
Other versions
JPH0245778A (en
Inventor
健治 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Filing date
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Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP63197459A priority Critical patent/JP2650974B2/en
Publication of JPH0245778A publication Critical patent/JPH0245778A/en
Application granted granted Critical
Publication of JP2650974B2 publication Critical patent/JP2650974B2/en
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Expired - Lifetime legal-status Critical Current

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  • Tests Of Electronic Circuits (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体集積回路の静特性を検査し、検査結
果の波形表示を伴う検査方法に関するものである。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inspection method for inspecting static characteristics of a semiconductor integrated circuit and displaying a waveform of an inspection result.

従来の技術 従来より行われていた半導体集積回路の検査方法の工
程流れ図を第5図に示す。第5図において、実線矢印の
流れは、静特性検査器が行う静特性検査の手順例であ
り、点線矢印の流れは、検査結果の波形データを波形表
示装置に取り込むための手順である。1つの検査項目の
検査が終了した後、次の検査項目の検査に移行するのに
当たって、被測定用の半導体集積回路に検査条件を印加
する前に、直前の検査項目の検査で発生した検査結果波
形を取り込む処理を行い、それに続いて、次の検査項目
nの検査を準備する処理(検査項目nの検査条件の解読
処理、波形読み取り準備)を行っていた。
2. Description of the Related Art FIG. 5 shows a process flow chart of a conventional semiconductor integrated circuit inspection method. In FIG. 5, the flow of the solid line arrow is an example of the procedure of the static characteristic inspection performed by the static characteristic tester, and the flow of the dotted arrow is the procedure for taking the waveform data of the inspection result into the waveform display device. After the inspection of one inspection item is completed, before the inspection condition is applied to the semiconductor integrated circuit to be measured before the inspection condition is applied to the next inspection item, the inspection result generated in the inspection of the immediately previous inspection item A process for capturing a waveform is performed, and subsequently, a process for preparing an inspection for the next inspection item n (a process for decoding inspection conditions for the inspection item n and a waveform reading preparation) is performed.

発明が解決しようとする課題 しかし、このような従来の方法では、静特性検査器と
波形表示装置との間で第5図中の点線で示すような処理
を行っており、ある検査項目と次に来る検査項目との間
に長い所要時間を要し、所要時間の長さが検査内容の複
雑さによって左右されていた。次の検査項目に移行する
期間中も電圧が印加される被測定半導体集積回路は、そ
の所要時間の長さによって発熱量が左右され、検査結果
波形が変動し、発熱しない時の静特性の波形を表示した
いのにもかかわらず、発熱後の特性を表示するという不
都合が起こり、所望の静特性を表示できなかったり、波
形表示が不安定になるという欠点があった。
Problems to be Solved by the Invention However, in such a conventional method, a process shown by a dotted line in FIG. 5 is performed between the static characteristic inspection device and the waveform display device. It takes a long time between the inspection item and the inspection item, and the length of the required time depends on the complexity of the inspection content. The voltage of the semiconductor integrated circuit under test, to which voltage is applied even during the transition to the next inspection item, depends on the amount of time required, and the amount of heat generated depends on the length of the required time. However, there is a disadvantage that the characteristics after heat generation are displayed, but desired static characteristics cannot be displayed or the waveform display becomes unstable.

本発明は、このような不都合を排除するもので、検査
に要する所要時間を短縮すると共に、被測定半導体集積
回路の静特性の検査結果波形を安定に表示できる半導体
集積回路の検査方法を提供することを目的とする。
The present invention eliminates such inconveniences, and provides a semiconductor integrated circuit inspection method capable of reducing the time required for the inspection and stably displaying the inspection result waveform of the static characteristic of the semiconductor integrated circuit to be measured. The purpose is to:

課題を解決するための手段 上記の問題点を解決するために、本発明の半導体集積
回路の検査方法は、予め、検査器から送出された各検査
項目毎の項目番号ならびに前記項目番号に対応した検査
条件を記憶して、計測準備を行う第1の工程と、前記検
査器が発生する検査条件を半導体集積回路に印加しつ
つ、前記検査条件に対応した前記項目番号と、前記第1
の工程で記憶済みの項目番号とを比較し、一致した項目
番号に対応する前記半導体集積回路の出力信号を選択す
る第2の工程と、前記選択された出力信号をA/D変換し
た測定データを前記記憶済みの項目番号に対応させて記
憶する第3の工程と、前記複数の検査項目毎に前記第2,
第3の工程を併行処理して、全ての検査を完了した後、
前記記憶済みの検査条件ならびに測定データを前記記憶
済みの項目番号に対応させて呼び出し波形表示処理を行
う第4の工程とを含む構成である。
Means for Solving the Problems In order to solve the above problems, a method for inspecting a semiconductor integrated circuit according to the present invention uses an item number for each inspection item sent from an inspector and the item number corresponding to the item number. A first step of storing inspection conditions and preparing for measurement, and applying the inspection conditions generated by the inspection device to the semiconductor integrated circuit while the item numbers corresponding to the inspection conditions are being stored;
A second step of comparing the item numbers stored in the step (a) with each other and selecting an output signal of the semiconductor integrated circuit corresponding to the matched item number; and measuring data obtained by A / D converting the selected output signal. A third step of storing a plurality of inspection items in association with the stored item numbers;
After performing the third step in parallel and completing all inspections,
A fourth step of performing a calling waveform display process by associating the stored inspection conditions and measurement data with the stored item numbers.

作用 上記構成の本発明によると、検査項目毎の項目番号
と、それに対応した検査条件とを予め第1の工程で記憶
し、それに続いて、検査器が同時に発生する検査条件,
項目番号と記憶済みの項目番号とを対応させて検査結果
のデータを記憶するので、全ての検査を完了した後、前
記済みの項目番号に対応させて記憶済みの検査条件なら
びに測定データを呼び出せば、検査項目に対応した検査
条件,測定データを混乱することなく表示できる。ま
た、従来行っていた各検査項目毎の事前に検査条件を解
読する工程が無くなり、検査の所要時間を短縮すること
ができ、安定な波形観測が可能になる。
According to the present invention having the above configuration, the item number of each inspection item and the inspection condition corresponding to the inspection item are stored in the first step in advance, and subsequently, the inspection condition generated by the inspection device simultaneously,
Since the inspection result data is stored by associating the item numbers with the stored item numbers, after all the inspections are completed, the stored inspection conditions and the measurement data corresponding to the already-existing item numbers are called. In addition, inspection conditions and measurement data corresponding to inspection items can be displayed without confusion. Further, the step of decoding inspection conditions in advance for each inspection item, which has been conventionally performed, is eliminated, so that the time required for inspection can be reduced, and stable waveform observation can be performed.

実施例 以下、本発明の半導体集積回路の検査方法に係わる一
実施例について、図面を参照しながら説明する。
Hereinafter, an embodiment of a method for testing a semiconductor integrated circuit according to the present invention will be described with reference to the drawings.

第1図は、この実施例に係わる検査装置のブロック構
成図を示す。第1図において、9は検査結果波形表示装
置、10は静特性検査装置、11は被測定半導体集積回路で
ある。そして、静特性検査装置10は、被測定半導体集積
回路の各端子に夫々個別に接続される測定器(1)〜測
定器(n)と、測定器制御回路7とから成り、測定器制
御回路7からの制御信号によって、測定器(1)〜
(n)までの必要な測定器を必要な数だけ選択し、直流
電圧または直流電流を被測定半導体集積回路11に印加す
る動作と、端子電圧または端子電流を測定する動作とを
行う。
FIG. 1 is a block diagram of an inspection apparatus according to this embodiment. In FIG. 1, reference numeral 9 denotes an inspection result waveform display device, 10 denotes a static characteristic inspection device, and 11 denotes a semiconductor integrated circuit to be measured. The static characteristic inspection apparatus 10 includes measuring instruments (1) to (n) individually connected to the respective terminals of the semiconductor integrated circuit to be measured, and a measuring instrument control circuit 7, and the measuring instrument control circuit 7. 7 by the control signal from the measuring device (1)
The necessary number of measuring devices up to (n) are selected, and the operation of applying a DC voltage or DC current to the semiconductor integrated circuit 11 to be measured and the operation of measuring the terminal voltage or terminal current are performed.

次に、検査結果波形表示装置9は、検査条件記憶比較
回路1と、前述の各測定器(1)〜(n)の出力信号を
選択する切換器3と、検査条件記憶回路1の出力信号に
よって切換器3の選択動作を制御する制御回路2と、切
換器3で選択した信号をA/D変換するA/D変換器4と、項
目番号と検査結果波形のデジタルデータを記憶するメモ
リ5と、メモリ5に格納された波形データと検査条件記
憶比較回路1の検査条件データとを受信してディスプレ
イ面に波形を表示する波形表示器6とからなる。
Next, the inspection result waveform display device 9 includes an inspection condition storage / comparison circuit 1, a switch 3 for selecting an output signal of each of the measuring devices (1) to (n), and an output signal of the inspection condition storage circuit 1. A control circuit 2 for controlling the selection operation of the switch 3 by an A / D converter 4 for A / D converting the signal selected by the switch 3; and a memory 5 for storing item numbers and digital data of test result waveforms. And a waveform display 6 for receiving the waveform data stored in the memory 5 and the test condition data of the test condition storage / comparison circuit 1 and displaying a waveform on a display surface.

この検査装置は、大量の同一品種を1個づつ置き換え
ながら連続的に検査するための装置であるが、計測準備
として、検査結果波形表示装置に取り込もうとする品種
の静特性検査を予め実施して、検査項目毎の検査条件を
静特性検査器10から取り込み、解読した検査条件を検査
条件記憶比較回路1に書き込む。その後、同一品種の新
しい半導体集積回路に置き換えて、量産用の検査を開始
する。
This inspection device is a device for continuously inspecting a large number of identical products one by one while replacing them one by one. However, as a measurement preparation, a static characteristic test of a product to be incorporated into an inspection result waveform display device is performed in advance. Then, the inspection conditions for each inspection item are fetched from the static characteristic inspection device 10, and the decoded inspection conditions are written in the inspection condition storage / comparison circuit 1. Then, mass production inspection is started by replacing with a new semiconductor integrated circuit of the same type.

第2図は、検査結果波形表示装置9の機能を説明する
ための図であり、メモリ5に記憶したデータa(アナロ
グ的に表現している)と、検査条件記憶比較回路1に記
憶した検査条件bとを検査項目に対応させて呼び出し、
ディスプレイ面に波形cを表示する。
FIG. 2 is a diagram for explaining the function of the inspection result waveform display device 9. The data a (expressed in analog form) stored in the memory 5 and the inspection stored in the inspection condition storage / comparison circuit 1 are shown. Call condition b in association with the inspection item,
The waveform c is displayed on the display surface.

次に、検査方法について、第3図,第4図の工程流れ
図を参照しながら説明する。まず、計測準備作業とし
て、第3図の工程流れ図を説明する。静特性検査器10内
の測定器制御回路7の制御によって、被測定半導体集積
回路11の各端子に必要な電圧または電流等のバイアス
(検査条件)を与え、所定の特性が測定できることを確
認する。それと同時に、測定制御回路7は、その検査条
件の情報と、それに対応する検査項目の項目番号の情報
とを、信号線101を介して検査結果波形表示装置9内の
検査条件記憶比較回路1に送り出し、検査条件記憶比較
回路1内に記憶する。この動作は、検査項目1から検査
項目nまでの検査項目毎に、全ての検査項目について項
目番号と検査条件とを対応させて記憶し、量産用の検査
環境の準備を完了する。
Next, the inspection method will be described with reference to the process flow charts of FIGS. First, as a measurement preparation operation, a process flow chart of FIG. 3 will be described. A bias (inspection condition) such as a necessary voltage or current is applied to each terminal of the semiconductor integrated circuit under test 11 under the control of the measurement device control circuit 7 in the static characteristic inspection device 10 to confirm that a predetermined characteristic can be measured. . At the same time, the measurement control circuit 7 sends the information of the inspection condition and the information of the item number of the corresponding inspection item to the inspection condition storage / comparison circuit 1 in the inspection result waveform display device 9 via the signal line 101. It is sent out and stored in the inspection condition storage / comparison circuit 1. In this operation, for each of the inspection items from inspection item 1 to inspection item n, the item numbers and the inspection conditions are stored in association with each other, and the preparation of the inspection environment for mass production is completed.

次に、先の被測定半導体集積回路11と同一品種の新し
い半導体集積回路に置き換えて、第4図の工程流れ図に
示す検査方法で量産用検査を実施する。
Next, mass production inspection is performed by the inspection method shown in the process flow chart of FIG. 4, replacing the semiconductor integrated circuit 11 to be measured with a new semiconductor integrated circuit of the same product type.

まず、検査項目1で測定器制御回路7が測定器(1)
〜(n)の内の必要な測定器を選択し、半導体集積回路
に検査条件を与えると共に、検査条件記憶比較回路1に
向けて項目番号の情報を送り出す。この項目番号の情報
は検査項目を指定する同期信号として用いて、既に記憶
済みの項目番号と比較し、一致した場合は、制御回路2
を介して切換器3を制御し、その検査項目で使用する測
定器(1)〜(n)を選択する。そして、選択した測定
器の出力信号をA/D変換して、変換された測定データを
項目番号と共にメモリ5内に取り込んで記憶する。
First, in the inspection item 1, the measuring device control circuit 7 sets the measuring device (1).
(N), a required measuring device is selected, an inspection condition is given to the semiconductor integrated circuit, and information of the item number is sent to the inspection condition storage / comparison circuit 1. The information of this item number is used as a synchronization signal for designating the inspection item, and is compared with the item number already stored.
To control the switching unit 3 via the control unit to select the measuring devices (1) to (n) to be used for the inspection item. Then, the output signal of the selected measuring instrument is A / D-converted, and the converted measurement data is taken in the memory 5 together with the item number and stored.

上述の動作を各検査項目毎に検査項目1から検査項目
nまで行う。そして、各検査項目の全ての検査を完了し
た後、項目番号を指定して、その項目番号に対応した検
査条件ならびに測定データを呼び出して波形表示処理
し、波形表示器6のディスプレイに検査結果波形を表示
する。
The above operation is performed for each of the inspection items from inspection item 1 to inspection item n. After all inspections of each inspection item are completed, an item number is designated, an inspection condition and measurement data corresponding to the item number are called, a waveform display process is performed, and an inspection result waveform is displayed on the display of the waveform display 6. Is displayed.

このようにすれば、検査項目に対応した検査条件,測
定データを混乱することなく表示でき、従来行っていた
各検査項目毎の事前に検査条件を解読する工程が無くな
って、検査の所要時間を短縮することができ、安定な波
形観測が可能になる。
In this way, the inspection conditions and measurement data corresponding to the inspection items can be displayed without confusion, and the conventional process of decoding the inspection conditions for each inspection item in advance is eliminated, and the time required for the inspection is reduced. The waveform can be shortened, and stable waveform observation becomes possible.

発明の効果 以上のように、本発明の半導体集積回路の検査方法
は、検査項目毎の項目番号と検査条件とを予め記憶し、
検査条件,項目番号と記憶済みの項目番号とを対応させ
て検査結果のデータを記憶するので、全ての検査を完了
した後、記憶済みの項目番号に対応させて記憶済みの検
査条件ならびに測定データを呼び出すことにより、検査
項目に対応した検査条件,測定データを混乱することな
く表示できる。また、各検査項目毎の事前に検査条件を
解読する従来の工程が無くなり、検査の所要時間を短縮
でき、安定な波形観測が可能になるという格別の効果を
奏する。
As described above, according to the semiconductor integrated circuit inspection method of the present invention, the item number and the inspection condition for each inspection item are stored in advance,
Since the inspection result data is stored by associating the inspection conditions and item numbers with the stored item numbers, after all inspections are completed, the stored inspection conditions and measurement data are stored in association with the stored item numbers. By calling, the inspection conditions and measurement data corresponding to the inspection items can be displayed without confusion. Further, the conventional process of decoding the inspection conditions in advance for each inspection item is eliminated, so that the time required for the inspection can be shortened and a stable waveform observation can be achieved.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の一実施例に係わる検査装置のブロック
構成図、第2図は検査結果波形の表示手段を説明するた
めの図、第3図は本発明の検査方法に係わる準備作業の
一実施例を説明するための流れ図、第4図は本発明の半
導体集積回路の検査方法に係わる一実施例を説明するた
めの流れ図、第5図は従来の半導体集積回路の検査方法
を説明するための図である。 1……検査条件記憶,比較回路、2……制御回路、3…
…切換回路、4……A/D変換器、5……メモリ、6……
波形表示装置、7……測定器制御回路、8……測定器1
〜n、9……検査結果波形表示装置、10……静特性検査
器、11……被測定半導体集積回路。
FIG. 1 is a block diagram of an inspection apparatus according to an embodiment of the present invention, FIG. 2 is a diagram for explaining a display means of an inspection result waveform, and FIG. FIG. 4 is a flowchart for explaining one embodiment, FIG. 4 is a flowchart for explaining one embodiment relating to a method of testing a semiconductor integrated circuit of the present invention, and FIG. 5 is a diagram illustrating a conventional method of testing a semiconductor integrated circuit. FIG. 1 ... inspection condition storage, comparison circuit, 2 ... control circuit, 3 ...
... Switching circuit, 4 ... A / D converter, 5 ... Memory, 6 ...
Waveform display device, 7 Measurement device control circuit, 8 Measurement device 1
... N, 9... Test result waveform display device, 10... Static characteristic tester, 11.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】予め、検査器から送出された各検査項目毎
の項目番号ならびに前記項目番号に対応した検査条件を
記憶して、計測準備を行う第1の工程と、 前記検査器が発生する検査条件を半導体集積回路に印加
しつつ、前記検査条件に対応した前記項目番号と、前記
第1の工程で記憶済みの項目番号とを比較し、一致した
項目番号に対応する前記半導体集積回路の出力信号を選
択する第2の工程と、 前記選択された出力信号をA/D変換した測定データを前
記記憶済みの項目番号に対応させて記憶する第3の工程
と、 前記複数の検査項目毎に前記第2,第3の工程を併行処理
して、全ての検査を完了した後、前記記憶済みの検査条
件ならびに測定データを前記記憶済みの項目番号に対応
させて呼び出し波形表示処理を行う第4の工程とを含む
半導体集積回路の検査方法。
A first step of preliminarily storing an item number of each inspection item sent from the inspection device and an inspection condition corresponding to the item number to prepare for measurement; and generating the inspection device. While applying the inspection condition to the semiconductor integrated circuit, the item number corresponding to the inspection condition is compared with the item number stored in the first step, and the semiconductor integrated circuit corresponding to the matched item number is compared. A second step of selecting an output signal; a third step of storing measurement data obtained by A / D converting the selected output signal in association with the stored item number; The second and third steps are performed in parallel, and after all inspections are completed, the stored inspection conditions and measurement data are subjected to a calling waveform display process in association with the stored item numbers. Semi-conductor including four steps Inspection method for an integrated circuit.
JP63197459A 1988-08-08 1988-08-08 Inspection method for semiconductor integrated circuit Expired - Lifetime JP2650974B2 (en)

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