JP2644951B2 - Method of forming conductor circuit - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a circuit on a printed wiring board, and more particularly to a method for forming a conductive circuit on a printed wiring board suitable for forming a high-density and fine circuit.

[0002]

2. Description of the Related Art Conventionally, as a method of forming a conductor circuit of a printed wiring board, a copper-clad laminate is used as a starting material,
In general, a method of providing an etching resist on a circuit portion to remove portions other than the circuit by etching is generally performed.

However, in the etching method, the etching proceeds not only in the thickness direction of the circuit but also in the width direction.
The cross-sectional shape of the circuit was not rectangular but trapezoidal with a wide width on the substrate side. Therefore, it has been difficult to obtain a sufficient circuit cross-sectional area when the wiring density is high and the wiring width approaches the circuit thickness. Further, since the dimensional accuracy of the circuit is determined by the variation in the etching amount, there is a problem that it is difficult to form fine wiring with high accuracy.

Therefore, in order to form such a high-density wiring, a pattern plating method is used instead of a normal etching method.

In the pattern plating method, a copper-clad laminate is used as a starting material, a plating resist is provided on a portion of a copper foil where a circuit is not formed, and a portion not covered with the plating resist, that is, a circuit forming portion is plated. To form a conductor circuit. Then, remove the plating resist,
Further, the underlying copper in portions other than the circuit is removed by etching to form an independent circuit.

In this method, since the conductor circuit is formed in the form of a plating resist, the precision of forming the circuit width is as follows:
It is determined by the precision of plating resist formation. Therefore, by forming a resist pattern by a photographic method using a photosensitive plating resist, fine wiring can be formed with high precision.

In such a pattern plating method, it is essential that the plating resist is sufficiently adhered to the substrate to prevent peeling or blistering in the plating step, and that the plating resist is completely removed after plating is completed. .
That is, contradictory characteristics such as high adhesion up to the plating step and good peelability in the resist removal step are required. In particular, when the conductive circuit is formed by chemical copper plating, the peeling or swelling of the resist in the plating step is likely to occur, so that it is necessary to improve the adhesion of the plating resist.

As a method for improving the adhesion of the plating resist and preventing peeling or blistering in the plating step, there are methods described in JP-A-64-13794 and JP-A-1-261888.

For stripping and removing the resist, a chlorine-based organic solvent such as dichloromethane or an alkaline resist stripper is usually used in accordance with the properties of the resist. However, as a result of improving the adhesiveness of the resist by the method described above, the resist cannot be completely removed by these stripping treatments, and the resist residue partially adheres to the underlying copper foil in a portion other than the circuit. Had occurred.

If such a resist residue is present, the copper in this portion will not be removed in a later etching step, causing defects such as a short circuit or insufficient circuit gap.

For this reason, as a method of removing the residue deposited on the resist, JP-A-60-206190 discloses a method in which the remaining photoresist is immersed in a strong acid and then brushed with an acid-resistant brush. ing.

[0012]

However, if a mechanical means such as brushing is used to remove the resist residue as in the prior art, it is easy to damage, peel off or cut the fine wiring. .

It is an object of the present invention to provide a method of forming a fine conductor circuit which can completely remove a resist without cutting or damaging a wiring when removing a plating resist.

[0014]

The above object can be achieved by the following processing method.

A step of providing a plating resist according to a circuit forming pattern on an underlayer metal to form a wiring pattern by plating, and thereafter, treating the plating resist with a stripping solution and dehydrating chemical bonds in the resist. A plating resist removal step of treating with a stripping residue removal treatment solution that is cut by a decomposition reaction, and a treatment with an underlying metal etchant removes the resist residue after the treatment with the above-described stripping residue removal treatment solution, and removes plating plating. And an etching step of etching the underlying metal of the exposed portion.

Here, the etching treatment for removing the resist residue and the etching treatment for removing the base metal other than the circuit to form an independent circuit are successively performed with the same processing liquid, so that the resist residue is removed. It is conceivable that etching unevenness may occur between the slow and fast portions, resulting in an undesired phenomenon such as a decrease in circuit width accuracy and a short circuit due to the remaining etching. To avoid such inconveniences, the etching process for removing the resist residue and the etching process for removing the base metal other than the circuit to form an independent circuit should be performed separately. Is effective. In this case, in the first etching step for removing the resist residue, it is also effective to use an etching solution having an etching rate lower than that of the second etching step for etching the base metal with the resist residue removed. In particular, the etching rate of the underlying metal in the first etching step is 1
Even better results can be obtained when the concentration is less than μm / min.

In order to more effectively remove the resist residue, ultrasonic waves may be applied to the stripping residue treatment solution,
The stripping residue treatment liquid can be sprayed on the substrate by spraying. Similarly, ultrasonic treatment or spray water washing can be performed in the water washing step after the treatment with the stripping residue treatment liquid or the water washing step after the first etching step. Further, ultrasonic treatment can be performed in the first etching step, or an etching solution can be sprayed on the substrate by spraying.

In another aspect, a step of providing a second base metal layer on the first base metal layer and a step of providing a plating resist in accordance with a circuit forming pattern on the second base metal layer A step of forming a wiring pattern by plating, a step of treating a plating resist with a stripping solution, and a step of removing a chemical bond in the resist by a dehydration decomposition reaction with a stripping residue removal treatment solution. By etching with an etchant for the underlying metal layer,
A conductor circuit comprising: a first etching step of removing a second base metal layer and a resist residue; and a second etching step of etching the first base metal after the first etching step. A method of forming is provided.

In this case, for the first base metal,
By using an etchant for the second base metal layer that selectively etches the second base metal layer, it is possible to reduce unevenness in etching when removing the resist residue, and to obtain a high-precision fine wiring. The effect is great. Further, it is preferable that the etching rate of the first base metal in the first etching step is 1 μm / min or less.

Also in this case, spraying or ultrasonic treatment can be used in the same manner as the method described earlier.

The stripping residue removing solution for breaking the chemical bond in the resist by a dehydration decomposition reaction includes an alcohol solution of an alkali metal hydroxide such as sulfuric acid, hydrobromic acid, hydroiodic acid, lithium, sodium and potassium. Etc. can be used. Among them, the effect of sulfuric acid is extremely large.

The sulfuric acid concentration is effective even when the concentration is about 20%, but the effect is further enhanced when concentrated sulfuric acid of 60% or more is used.
Particularly for those having poor releasability, good results can be obtained by treating with concentrated sulfuric acid of 80% or more at a temperature of 30 ° C. or more.

As the plating resist, there are a screen printing resist and a photosensitive resist, and a photographic process using a photosensitive resist is advantageous for forming a high-precision pattern. For example, a dry film photoresist is laminated with a hot roll, and a pattern image is exposed through a photomask and then developed to form a resist pattern.

As the photoresist, in addition to a dry film type photoresist, a liquid photoresist may be applied by a method such as screen coating, roll coating, curtain coating and the like. In particular, as a resist, an acryloyl group, a methacryloyl group, an ester bond such as an epoxy group, using a resist having a compound having an ether bond as a main component, a stripping residue removal treatment liquid that cuts a chemical bond in the resist by a dehydration decomposition reaction, By combining the treatment with the etching solution for the base metal, the resist residue after peeling can be effectively removed.

When the plating for forming the wiring pattern is electroless copper plating, the resist is particularly likely to be peeled off in the plating step, so that a treatment for strengthening the adhesion between the resist and the base is used. Therefore, the effect of the present invention is great.

In the embodiment described above, first, most of the resist is removed with a stripping solution, and then the remaining resist (ie, stripping residue) that has not been completely removed is removed using a stripping residue removal processing solution. However, if the conditions for the treatment with the above-described stripping residue treatment liquid are appropriately selected, the treatment with the stripping liquid is not always necessary. In addition,
The resist removing liquid in the systems 31 and 32 corresponds to the above-described stripping residue removing treatment liquid.

[0027]

The reason why the present invention can effectively remove the resist residue is presumed to be as follows.

When the resist residue adhering to the underlying metal is treated with a stripping residue removal treatment solution that cuts a chemical bond in the resist by a dehydration decomposition reaction, the resist residue deteriorates,
As a result of dissolution of relatively thin portions, cracks and pinholes, and increase in the permeability of the etchant as the resist itself becomes hydrophilic, the etchant easily permeates the interface between the resist residue and the underlying metal Change to a state.

At this stage, the resist residue is not yet completely dissolved, and it is difficult to peel off because it is in close contact with the substrate. However, if the underlying metal is etched following this process, the interface between the resist and the underlying metal is etched because the etchant is likely to penetrate into the interface, and the etching solution is strongly adhered. The resist residue loses adhesion and can be easily peeled off. In particular, when the adhesion is strong, peeling may not be possible by etching alone, but peeling can be promoted by using mechanical treatment such as spraying or ultrasonic treatment together.

[0030]

Next, an embodiment of the present invention will be described with reference to sectional views of a conductor circuit and a base material shown in FIG.

FIG. 1A is a cross section of an insulating plate 1 having a base metal layer 2. Copper is generally used for the base metal layer 2 in a printed wiring board. As the insulating plate 1, a glass epoxy laminate, a glass polyimide laminate, or the like can be used. These can use what is marketed as a copper-clad laminate. The underlying metal layer 2 is not limited to one layer, but may be provided in a plurality of layers.

FIG. 1B shows a state in which the surface of the base metal layer 2 is roughened in order to improve the adhesion of the plating resist. In particular, when the conductor circuit shown in FIG. 1D described later is formed by chemical copper plating, an appropriate adhesion promoting treatment is indispensable because the resist is easily peeled or swollen in the plating step. However, such surface roughening may be performed as needed, and is not an essential step of the present invention.

Next, a plating resist 3 is formed on the underlying metal layer 2.
Is formed (see FIG. 1C). As a method of forming a plating resist pattern, there are a screen printing method, a photographic method using a photosensitive resist, and the like. A photographic method is advantageous in forming a high-precision pattern. For example, a dry film photoresist is laminated with a hot roll, and a pattern image is exposed through a photomask and then developed to form a resist pattern. As the photoresist, in addition to dry film type photoresist, liquid photoresist is screen-coated, roll-coated,
You may apply and apply by methods, such as a curtain coat.

Thereafter, the conductor circuit 4 is formed by plating (see FIG. 1D). In the case of a printed wiring board, the conductor circuit 4 is usually made of copper plating. This is formed by electrolytic copper plating, chemical copper plating, or the like. Generally, electrolytic copper plating is widely used, but chemical copper plating is superior in terms of plating thickness uniformity.

Next, the plating resist 3 is stripped with a resist stripper. Usually, a chlorine-based organic solvent such as dichloromethane is used for the solvent-developing type resist, and an alkaline resist stripping solution or the like is used for the alkali-developing type resist for removing and removing the resist. However, when the adhesion of the plating resist 3 becomes high, the resist cannot be completely removed by these stripping treatments, and as shown in FIG. Residue 5 is formed. When the underlying copper foil is etched in this state, a comparative example shown in FIG.
As shown in (i), an etching residue 6 occurs below the resist residue 5. The processing from (a) to (e) in FIG. 2 is the same as the processing from (a) to (e) in FIG.

On the other hand, after the resist stripping process (FIG. 1)
(See (e)), and the resist is treated with a stripping residue removal treatment liquid that cuts chemical bonds by a dehydration decomposition reaction (FIG. 1 (f)
Further, if the substrate is further treated with an etching solution for the underlying metal, the resist residue can be effectively removed (FIG. 1).
(G)).

As the stripping residue removal treatment solution, an alcohol solution of an alkali metal hydroxide such as sulfuric acid, hydrobromic acid, hydroiodic acid, lithium, sodium, potassium or the like can be used. Among them, the effect of sulfuric acid is extremely large.

Although the sulfuric acid concentration is effective even at about 20%, the effect is further enhanced when concentrated sulfuric acid of 60% or more is used. Particularly for those having poor releasability, good results can be obtained by treating with concentrated sulfuric acid of 80% or more at a temperature of 30 ° C. or more. Further, when removing the resist residue 5 by treating with the etching solution of the base metal layer 2, by applying ultrasonic waves or spraying the etching solution, the removal efficiency of the resist residue can be improved.

Thereafter, the underlying metal layer 2 other than the circuit is further removed by etching, whereby a fine wiring pattern free from defects such as residual etching can be formed (FIG. 1 (h)).

Hereinafter, each step will be described in detail with some more specific examples.

<Example 1> [Step 1] Substrate thickness 0.1 m having a 12 μm copper layer
The double-sided copper-clad glass-polyimide laminate of m is cut to a required size, and the copper surface is brushed and polished.

[Step 2] After washing with water, the surface was roughened for 1 minute in a 30 ° C. soft etching solution having the following composition (I).

Composition (I) Ammonium persulfate 200 g / l 97% sulfuric acid 5 ml / l [Step 3] Next, in order to further roughen the copper surface, it is immersed in a treatment solution having the following composition (II) at 70 ° C. for 2 minutes. An oxide film layer was formed on the surface.

Composition (II) NaClO ₂ 100 g / l Na ₃ PO ₄ .12H ₂ O 30 g / l NaOH 12 g / l [Step 4] Then, after washing with water, a treatment solution having the following composition (III) was added at 45 ° C. for 1 hour. Then, the oxide film layer was reduced.

Composition (III) Dimethylamine borane 10 g / l NaOH 10 g / l [Step 5] Next, after washing with water, a nickel plating solution having the following composition (IV) was used to obtain 0.05 A / dm ² at 20 ° C. At 6
Then, a thin nickel plating layer corresponding to the above-mentioned second base metal layer was formed on the surface of the copper layer. In this case, the thickness of the nickel plating layer was 0.06 μm.

Composition (IV) NiSO ₄ .6H ₂ O 200 g / l NaCl 15 g / l H ₃ BO ₃ 15 g / l Next, water washing was performed to obtain a substrate having a roughened surface.

[Step 6] Subsequently, after sufficiently drying the substrate surface, a photosensitive resin composition layer having the following composition (V) (thickness: 3)
5 μm) was laminated by a hot roll. At this time, the hot roll temperature was 110 ° C., and the laminating speed was 1 m / min.

Composition (V) Trimethylolpropane triacrylate 20 parts by weight Tetraethylene glycol diacrylate 20 Polymethyl methacrylate (weight average molecular weight: about 120,000) 60 Benzophenone 64, 4′bis (diethylamino) benzophenone 0.1 Victoria Pure Blue 0.05 Hydroquinone 0.1 [Step 7] After allowing to cool for about 5 minutes, mask a portion where a circuit is to be formed and apply 100 mJ / cm ² with an ultra-high pressure mercury lamp exposure apparatus.
Exposure. Next, 1,1,1-trichloroethane was used as a developing solution, and development was performed by spraying at about 25 ° C. for 2 minutes. This allows portions other than the circuit to be masked with the plating resist.

[Step 8] Next, the nickel film in a portion to be a circuit was removed by treating with a soft etching solution of the composition (I) for 2 minutes.

[Step 9] After washing with water, it was immersed in a chemical copper plating solution having the following composition (VI) at 70 ° C. for 12 hours, to a thickness of about 30 μm.
Was formed.

Composition (VI) Copper sulfate pentahydrate 10
g / l disodium ethylenediaminetetraacetate dihydrate 30
g / l 37% formalin 3
g / l NaOH pH 12.6 Amount 2,2'-dipyridyl 30m
g / l polyethylene glycol (average molecular weight 600) 10
g / l [Step 10] After plating, wash sufficiently with water. Subsequently, after the whole was immersed in a 10% aqueous sulfuric acid solution for 2 minutes, the following composition (VI
Solder plating was performed at 1 A / dm ² for 15 minutes with the solder plating solution of I).

Composition (VII) Sn (BF ₄ ) ₂ (as Sn) 15 g / l Pb (BF ₄ ) ₂ (as Pb) 10 g / l H ₃ BO ₃ 40 g / l HBF ₄ 300 g / l [Step 11] Then, methylene chloride at 30 ° C. was sprayed on the substrate for 10 minutes to remove the resist on the substrate. However, the plating resist residue adhered to the base metal other than the circuit.

[Step 12] The substrate was immersed in 95% sulfuric acid at 30 ° C. for 5 minutes, which is a treatment solution for removing a residue from the resist, to cause a dehydration decomposition reaction.

[Step 13] Next, after the substrate was washed with water, etching was performed for 1 minute in a soft etching solution of the composition (I) while applying ultrasonic waves. Note that the etching in this step corresponds to the above-described first etching.

As a result, the underlying copper foil was etched by about 0.8 μm. By this etching treatment, all the resist residue was removed from the surface of the underlying metal.

[Step 14] Next, after the substrate was washed with water, the underlying copper foil in portions other than the circuit was removed by etching with an etching solution having the following composition (VIII). Note that the etching in this step corresponds to the above-described second etching. The etching rate was 8 μm / min.

Composition (VIII) 97% sulfuric acid 150 ml / l 85% phosphoric acid 20 ml / l aqueous hydrogen peroxide (35%) 100 ml / l The conductor circuits formed by the above-described processes from step 1 to step 14 include: In addition, there was no copper etching residue in portions other than the circuit, and a high-precision wiring pattern could be formed without defects.

<Comparative Example 1> The substrate before the sulfuric acid treatment in Example 1 was directly treated with an etching solution having the composition (VIII).
After the step 11, the processing of the step 14 was performed directly without performing the steps 12 and 13, and an attempt was made to etch the underlying copper foil in portions other than the circuit.

As a result, most of the resist residue remained on the surface of the underlying copper as it was, and that portion was left unetched, resulting in a portion where the circuit interval became smaller than the designed value or a short circuit between the circuits occurred.

Next, based on Example 1 described above, in order to clarify the difference in effects under various conditions, the results of experiments conducted with various conditions adjusted will be described below.

Examples 2 to 15 are cases where the nickel plating step of Step 5 is not performed, that is, an example in which the second base metal layer is not provided. On the other hand, Examples 16 to 23 correspond to Step 5
This is an example in which a second base metal layer is formed by the method described above.

<Examples 2 to 6> In these examples, the soft etching process in step 13, that is, the first etching process time was changed to confirm the influence of the process time.

As described above, the nickel plating step of Step 5 is omitted, and no second base metal layer is provided.

As a mask used in the step 6, a test pattern mask having a total of 200 parallel patterns of 20 sets of 10 parallel patterns having a circuit width of 100 μm, an interval of 200 μm, and a length of 100 mm is used. Exposure. Further, the plating in step 9 was performed by copper sulfate electroplating instead of the chemical copper plating of Example 1 to form a conductor circuit having a thickness of 30 μm.

Except for the above points, the same processing as in Example 1 was performed to prepare an evaluation substrate.

The evaluation of the prepared substrate was carried out by observing the resist residue after the step 13 and counting the number.
Further, after the process 14, the number of cases where copper remained due to under-etching and the wiring width was too large, and the number of cases where the pattern was chipped due to over-etching and the wiring width was too small were counted in the same manner. Table 1 summarizes the results.

[0067]

[Table 1]

As can be seen from Table 1, the effect of greatly reducing the occurrence of defects and the like is recognized. <Comparative Example 2> In Comparative Example 2, the etching process of Step 13 was omitted from Example 2, and the etching process of Step 14 was performed following Step 12. In other words, this is the case where the first etching time is set to zero.

The number of wiring defects was evaluated in the same manner as in Examples 2 to 6, and the results are shown in Table 2.

[0070]

[Table 2]

As can be seen from Table 2, since the first etching process is not performed, the resist remains on almost the entire surface even before step 14. Because of that, even after step 14,
Both defects of copper residue and chipped pattern are extremely large.

<Examples 7 to 10> In these examples, the main purpose was to examine the difference in the effect due to the strength of the etchant used in the first etching.

Therefore, an etching solution stronger than the etching solution used in Examples 2 to 6, specifically,
The amount of the hydrogen peroxide solution of the etching solution of the composition (VIII) is set to 50
The etching in step 13 was performed using an etching solution of ml / l.

The other conditions are the same as in Examples 2 to 6. Note that the processing time is changed in Examples 7 to 10 as well.

Table 3 summarizes the results of evaluation in the same manner as in Examples 2 to 6.

[0076]

[Table 3]

As can be seen from Table 3, the resist is completely removed when the processing is performed for 60 seconds or more. Further, as can be seen from comparison with Table 2, the number of pattern defects is significantly reduced as compared with Comparative Example 2.

On the other hand, as compared with Table 1, the number of defects and the like is slightly larger. This is presumably because the first etching rate was higher than necessary, and the etching did not proceed uniformly between the portion where the resist residue was present and the portion where the resist residue was not present.

<Examples 11 to 15>
Is mainly performed to examine the effect of changing the etching process in Examples 2 to 6 while applying ultrasonic waves to the spray etching.

Other conditions are the same as those in Examples 2 to 6. Table 4 shows the results of evaluation by the same method.

[0081]

[Table 4]

As can be seen from a comparison with Table 1, it takes a little longer to remove the resist than when the ultrasonic treatment is performed. However, if the treatment time is extended, the resist is completely removed and the pattern defects are reduced. It became clear that we could do that.

<Examples 16 to 19> These are different from Examples 2 to 15 described above in that the nickel plating step of Step 5 was performed, that is, the case where the second base metal layer was provided. is there.

As a mask used in step 6, a circuit width of 70
Exposure was performed using a test pattern mask having a total of 200 parallel patterns of 20 sets, each of which includes 10 parallel patterns having a length of 130 μm and an interval of 130 μm. Further, a dry film resist having a thickness of the photosensitive resin composition layer of 75 μm was used.

In step 9, chemical copper plating was performed for 26 hours to form a conductor circuit having a thickness of about 65 μm.

Except for the above points, the same processing as in Example 1 was performed to prepare an evaluation substrate.

The results of the evaluation are shown in the table.

[0088]

[Table 5]

<Examples 20 to 23>
The purpose of the present invention is mainly to examine the effect of using an etching solution capable of selectively etching the second base metal, in this case, a nickel selective etching solution, as an etching solution used in the etching process. . The specific composition of the nickel selective etching solution is as shown in composition (IX).

Composition (IX) 97% sulfuric acid 30 ml / l 70% nitric acid 100 ml / l 85% phosphoric acid 15 ml / l 1,2,3-benzotriazole 0.2 g / l hydrogen peroxide (35%) 30 ml / l Other conditions are the same as those in Examples 20 to 23.

A substrate for evaluation was prepared by changing the etching time in step 13, and the results of evaluation of wiring defects were summarized in Table 6.

[0092]

[Table 6]

As can be seen from a comparison of Tables 5 and 6, when a plurality of base metal layers are provided, defects are reduced by using an etching solution having a selectivity suitable for each layer.

<Comparative Example 3> In Comparative Example 3, the surface was rubbed with an acid-resistant brush shown in the prior art, instead of performing Step 13. Except for this, it is the same as Examples 20 to 23.

In this case, the resist was removed from the portion without the wiring and the portion with a wide wiring interval.
At the time of the resist and between the parallel wirings, the resist was not completely removed, and copper remained after the etching.
In addition, defects such as chipping of a pattern, which are considered to be caused by scratches caused by brushing, occurred.

<Example 24> In this example, the treatment with the stripping solution is omitted. In other words, it is basically the same as Example 1, except that Step 11 (treatment with a stripping solution) is omitted, and instead, Step 12 (treatment with a stripping residue removal treatment liquid) and Step 13 are performed under the following process conditions. ', 13'.

[Step 12 '] The substrate was immersed in 95% sulfuric acid at 40 ° C., which is a resist removal liquid (stripping residue removal treatment liquid), for 20 minutes to cause a dehydration decomposition reaction.

[Step 13 '] Next, after the substrate was washed with water for 10 minutes, it was etched in a soft etching solution having the composition (IX) for 5 minutes while applying ultrasonic waves. Note that the etching in this step corresponds to the above-described first etching.

As a result, the underlying copper foil was etched by about 0.7 μm. By this etching treatment, the resist was completely removed from the surface of the underlying metal.

In the conductor circuit formed by the processing shown in this example, there was no copper etching residue in portions other than the circuit, and a high-precision wiring pattern could be formed without defects.

[0101]

According to the present invention, it is possible to completely remove the adhesion residue when removing the plating resist. If the conditions for the treatment with the resist removal liquid (stripping residue removal treatment liquid) are appropriately selected, the treatment with the stripping liquid can be omitted. Therefore, it is possible to prevent etching residue of the base metal due to the adhesion of the resist residue, and to form a fine circuit free from defects such as a short circuit.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing a method for forming a conductor circuit according to one embodiment of the present invention.

FIG. 2 is an explanatory view showing a conventional method for forming a conductor circuit.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Insulating board, 2 ... Base metal layer, 3 ... Plating resist, 4
... conductor circuit, plating pattern, 5 ... resist residue, 6 ...
Etching residue

 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Takeyuki Itabashi 4026 Kuji-cho, Hitachi City, Ibaraki Prefecture Within Hitachi Research Laboratory, Hitachi, Ltd. (72) Inventor Shin Nishimura 4026 Kuji-machi, Hitachi City, Ibaraki Prefecture Hitachi, Ltd.Hitachi Research, Inc. In-house (72) Inventor Satoru Awa 4026 Kuji-cho, Hitachi City, Ibaraki Pref.Hitachi, Ltd.Hitachi Laboratory, Hitachi, Ltd. (72) Inventor Akio Takahashi 4026 Kuji-cho, Hitachi City, Ibaraki Pref.Hitachi, Ltd. Ritsuji Toba 1 Horiyamashita, Hadano-shi, Kanagawa Prefecture, Hitachi, Ltd.Kanagawa Plant (72) Inventor Masashi Miyazaki 1-Horiyamashita, Hadano-shi, Kanagawa Prefecture Hitachi, Ltd.Kanagawa Plant (56) References JP-A Sho 64- 13794 (JP, A) JP-A-60-206190 (JP, A) JP-A-3-82186 (JP, A) )

Claims (22)

(57) [Claims] To 1. A on the base metal, providing a plating resist corresponding to the circuit formation pattern, a first step of forming a wiring pattern by plating, and a second step of treating said plating resist with a release liquid, wherein On the underlying metal without being peeled by the second step
The following fourth process is performed on the remaining plating resist residue.
To increase the permeability of the etching solution of the base metal used in the process
In order to avoid this, the plating resist residue
The plating layer is treated with a resist solution that partially breaks the bond.
A third step of treating a dying residue; and the etching solution while leaving the plating resist residue.
By treating in the plating resist residue
Infiltrate the etchant and remove the plating resist residue
And a fourth step of etching a base metal of the part . 2. A plating resist corresponding to a circuit forming pattern is provided on a base metal, and a first step of forming a wiring pattern by plating and a third step for the plating resist are used.
In order to increase the permeability of the etching solution of the base metal,
A laser that partially cuts the chemical bond in the plating resist.
A second process for treating the plating resist with a dying treatment solution
And treating with the etching solution while leaving the plating resist.
Process, the etching resist is added to the plating resist.
Metal solution under the plating resist.
And a third step of etching the conductive circuit. 3. The method for forming a conductive circuit according to claim 1, wherein
And the fourth step is performed under the plating resist residue.
Plating by etching the base metal
Removing the resist residue, and removing the underlying metal exposed in the fourth step by the fourth step.
Etch with an etchant different from the etchant in the step
A fifth step of performing etching, wherein the etchant of the fourth step is applied to the base metal.
Etching rate of the etching solution of the fifth step.
Smaller than the etching rate for the base metal
A method for forming a conductor circuit, wherein: 4. The method for forming a conductive circuit according to claim 2, wherein
And the third step comprises:
By etching the underlying metal, the plating resist
And removing the exposed base metal from the third step.
Etch with an etchant different from the etchant in the step
A fourth step of performing etching, wherein the etchant of the third step is applied to the base metal.
Etching rate of the etching solution of the fourth step.
Smaller than the etching rate for the base metal
A method for forming a conductor circuit, wherein: 5. The formation of a conductor circuit according to claim 1 or 2.
In the method, the plating resist forms an ester bond.
Resists based on compounds having
A resist composed mainly of compounds having Le binding, the resist treatment liquid chemical binding in the plating resist
Causes a chemical reaction that cuts by a dehydration decomposition reaction
A method for forming a conductor circuit, wherein the method is a treatment liquid . 6. A method for forming a conductor circuit according to claim 5.
The plating resist is an acryloyl group,
Compound containing at least one of a royl group and an epoxy group
Conductor characterized in that it is a resist mainly composed of an object
Circuit formation method. 7. The method for forming a conductive circuit according to claim 1, wherein a water-insoluble resist is used as the plating resist. 8. The formation of the conductor circuit according to claim 1 or 2.
In the method, sulfuric acid, bromide is used as the resist processing solution.
Hydroic acid and / or at least one of hydroiodic acid
The including solution, or alcohol of an alkali metal hydroxide
A method for forming a conductive circuit, wherein a conductive solution is used. 9. The method for forming a conductor circuit according to claim 3, wherein
The base metal is composed of a plurality of layers, and the fourth metal
In this case, the uppermost metal of the plurality of base metals
The layer to be etched is etched, and in the fifth step,
Etching the second layer from the top of the metal
And a method for forming a conductor circuit. 10. The method for forming a conductor circuit according to claim 1,
Then, after the third step and before the fourth step,
The method may further include a step of washing the resist processing solution with water.
And a method for forming a conductor circuit. 11. The method for forming a conductor circuit according to claim 2,
Then, after the second step and before the third step,
The method may further include a step of washing the resist processing solution with water.
And a method for forming a conductor circuit. 12. The method for forming a conductor circuit according to claim 1,
Here, the etching solution in the fourth step is the same as the base metal.
Metal etching rate is 1 μm / min or less.
A method for forming a conductor circuit, which is characterized by the following . 13. The method for forming a conductor circuit according to claim 2,
Here, the etching solution in the third step is the same as that of the base metal.
Metal etching rate is 1 μm / min or less.
A method for forming a conductor circuit, which is characterized by the following. 14. The method for forming a conductor circuit according to claim 1,
In the third step, the resist processing solution is
Conductive circuit characterized by processing while applying sound waves
Formation method. 15. The method for forming a conductor circuit according to claim 1,
Oite, wherein in the third step, prior to the record resist process liquid
Spraying the plating resist residue with a spray
And a method for forming a conductor circuit. 16. A method for forming a conductor circuit according to claim 10.
In, the step of washing away the resist processing solution with water,
The method is performed while applying ultrasonic waves to the water.
How to form body circuits. 17. The method for forming a conductive circuit according to claim 1,
In the fourth step, the etching solution contains an ultrasonic wave.
Of a conductor circuit characterized by processing while applying a wave
Forming method. 18. The method for forming a conductive circuit according to claim 2,
Here, in the third step, the etching liquid is supersonic.
Of a conductor circuit characterized by processing while applying a wave
Forming method. 19. The method for forming a conductor circuit according to claim 1,
In the fourth step, the etching solution is
Spraying the plating resist residue with a spray
A method for forming a conductor circuit, which is characterized by the following. 20. The method for forming a conductor circuit according to claim 3,
Then, after the fourth step, before the fifth step, wash with water.
A method for forming a conductor circuit, characterized by purifying. 21. A method for forming a conductor circuit according to claim 20.
Cleaning while applying ultrasonic waves to the water
A method for forming a conductor circuit, comprising: 22. The method for forming a conductor circuit according to claim 8,
Wherein the resist processing solution is sulfuric acid.
Method for forming a conductive circuit.