JP2622582B2 - Method for manufacturing low-temperature fired substrate - Google Patents

Method for manufacturing low-temperature fired substrate

Info

Publication number
JP2622582B2
JP2622582B2 JP63139465A JP13946588A JP2622582B2 JP 2622582 B2 JP2622582 B2 JP 2622582B2 JP 63139465 A JP63139465 A JP 63139465A JP 13946588 A JP13946588 A JP 13946588A JP 2622582 B2 JP2622582 B2 JP 2622582B2
Authority
JP
Japan
Prior art keywords
mullite
powder
temperature fired
fired substrate
manufacturing low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63139465A
Other languages
Japanese (ja)
Other versions
JPH01308867A (en
Inventor
昇 宮田
直己 中西
日出人 上赤
千丈 山岸
Original Assignee
日本セメント株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本セメント株式会社 filed Critical 日本セメント株式会社
Priority to JP63139465A priority Critical patent/JP2622582B2/en
Publication of JPH01308867A publication Critical patent/JPH01308867A/en
Application granted granted Critical
Publication of JP2622582B2 publication Critical patent/JP2622582B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676Single layer compositions

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は焼成温度が低く、導体に銀を使用できる多層
配線基板の製造方法に関し、さらに詳しくはムライトと
ホウケイ酸鉛ガラスの混合粉末を低温焼成する基板の製
造方法に関する。
Description: FIELD OF THE INVENTION The present invention relates to a method for producing a multilayer wiring board having a low firing temperature and capable of using silver as a conductor. More specifically, a mixed powder of mullite and lead borosilicate glass is cooled to a low temperature. The present invention relates to a method for manufacturing a substrate to be fired.

〔従来の技術〕[Conventional technology]

従来、セラミック多層基板としてムライト系セラミッ
クスはアルミナ系セラミックスに比べ誘電率が小さく、
熱膨張係数が小さいことから有用であるが、高純度ムラ
イトが得難いためアルミナ系セラミック基板が大勢を占
めていた。
Conventionally, as a ceramic multilayer substrate, mullite ceramics have a smaller dielectric constant than alumina ceramics,
Although useful because of its low coefficient of thermal expansion, it is difficult to obtain high-purity mullite, and alumina-based ceramic substrates occupy the majority.

しかし近時高純度ムライトが製造されるようになった
ため、ムライトとけい酸アルミニウムあるいはけい酸ア
ルミニウムマゲネシウムを主成分とするガラス粉末とか
らセラミックス焼結体が製造されるようになった(特開
昭57−115895号など)。
However, recently, since high-purity mullite has been produced, ceramic sintered bodies have been produced from mullite and glass powder containing aluminum silicate or aluminum magnesium silicate as a main component (Japanese Unexamined Patent Publication No. No. 57-115895).

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

しかし上記ムライト系セラミックス焼結体は1400〜16
00℃という高い焼成温度を要するため、特別の焼成炉を
必要とし、還元性雰囲気での焼成しかできなかった。
However, the above mullite ceramic sintered body is 1400-16
Since a high sintering temperature of 00 ° C. is required, a special sintering furnace is required, and sintering can only be performed in a reducing atmosphere.

そのためムライト粉末と混合するガラス粉末について
種々検討されホウケイ酸ガラスを使用することが提案さ
れた。しかしこのものは誘電率は4.8度と小さいもの
の、焼成温度は改善されたとはいえ、1000℃程度は必要
であるため多層配線基板に使用する場合、導体に銅を用
いなければならず、従って還元性雰囲気での焼成の余儀
なく、特別の焼成炉を必要とするという問題は解決され
ていない。
Therefore, glass powder mixed with mullite powder has been studied in various ways, and it has been proposed to use borosilicate glass. However, although this has a small dielectric constant of 4.8 degrees, although the firing temperature has been improved, it must be used at about 1000 degrees Celsius. The problem of necessitating firing in a neutral atmosphere and requiring a special firing furnace has not been solved.

そこで本発明者らは導体に銀の使用可能な950℃以下
の焼成温度で大気中焼成できるムライト系セラミックス
を得るべく研究を重ねた結果、ムライト粉末と混合する
ガラス粉末としてホウケイ酸鉛ガラスを用いることによ
り目的を達し、次に述べる発明に到達した。
Therefore, the present inventors have repeatedly studied to obtain mullite ceramics that can be fired in the air at a firing temperature of 950 ° C. or less where silver can be used as a conductor, and use lead borosilicate glass as a glass powder to be mixed with mullite powder Thus, the object has been achieved, and the invention described below has been achieved.

〔課題を解決するための手段〕[Means for solving the problem]

すなわち本発明はPbO40〜70wt%、SiO220〜50wt%、B
2O35〜15wt%、Al2O31〜10wt%を成分とするガラス粉末
30〜70wt%と、ムライト粉末70〜30wt%とから成る混合
粉末をシート成形し、850〜950℃で焼成することを特徴
とする低温焼成基板の製造方法を要旨とするものであ
る。
That is, the present invention relates to 40 to 70 wt% of PbO, 20 to 50 wt% of SiO2,
Glass powder containing 2 to 15 wt% of 2 O 3 and 1 to 10 wt% of Al 2 O 3
A gist of the present invention is a method for producing a low-temperature fired substrate, wherein a mixed powder comprising 30 to 70 wt% and mullite powder 70 to 30 wt% is formed into a sheet and fired at 850 to 950 ° C.

本発明において使用するホウケイ酸鉛ガラスはPbO40
〜70wt%、SiO220〜50wt%、B2O35〜15wt%、Al2O31〜1
0wt%を成分とするものである。このガラスをつくるに
は酸化鉛(Pb3O4)、非晶質シリカ(SiO2)、酸化ホウ
素(B2O3)、酸化アルミニウム(Al2O3)の所定量をボ
ールミルなどで乾式混合し、電気炉にて1400℃で溶融し
た後、溶融物を水中に投入して急冷する。得られたガラ
ス塊を振動ミル(媒体ZrO2製)で湿式粉砕し乾燥してガ
ラス粉末を得る。ガラス粉末の平均粒径は1.0μm、最
大粒径は4.7μmであり、軟化温度は600℃程度である。
The lead borosilicate glass used in the present invention is PbO40
~70wt%, SiO 2 20~50wt%, B 2 O 3 5~15wt%, Al 2 O 3 1~1
0 wt% is a component. To make this glass, dry mixing of lead oxide (Pb 3 O 4 ), amorphous silica (SiO 2 ), boron oxide (B 2 O 3 ), and aluminum oxide (Al 2 O 3 ) in a ball mill Then, after melting at 1400 ° C. in an electric furnace, the melt is put into water and rapidly cooled. The obtained glass lump is wet-pulverized by a vibration mill (made of medium ZrO 2 ) and dried to obtain a glass powder. The average particle size of the glass powder is 1.0 μm, the maximum particle size is 4.7 μm, and the softening temperature is about 600 ° C.

一方ムライト粉末は水酸化アルミニウムと非晶質シリ
カをAl2O3の割合が71.8wt%、残りがSiO2となるように
配合し、湿式混合し、乾燥した後、1600℃で1時間仮焼
し、得られた仮焼物を振動ミル(媒体 ムライト製)で
粉砕して得る。ムライト粉末の平均粒径は0.2μm、最
大粒径は7μmであった。
On the other hand, the mullite powder was prepared by mixing aluminum hydroxide and amorphous silica in such a manner that the proportion of Al 2 O 3 was 71.8 wt% and the remainder was SiO 2 , wet-mixed, dried and calcined at 1600 ° C. for 1 hour. Then, the obtained calcined product is pulverized with a vibration mill (made of medium Mullite) to obtain. The average particle size of the mullite powder was 0.2 μm, and the maximum particle size was 7 μm.

本発明の基板の製造方法の一例を示すと、ムライト粉
末30〜70wt%にホウケイ酸鉛ガラス粉末70〜30%の配合
割合で配合し、バインダーとしてポリビニルブチラール
(PVB)、さらに可塑剤としてジブチルフタレート(DB
P)および溶剤としてエタノールを加えてスラリーとす
る。このスラリーをドクターブレード法により厚さ0.12
mmのシートを作製し、このシートを数枚積層し面プレス
し脱バインダー後850〜950℃で焼成する。
As an example of the method for producing the substrate of the present invention, a blend ratio of lead borosilicate glass powder of 70 to 30% to mullite powder 30 to 70% by weight, polyvinyl butyral (PVB) as a binder, and dibutyl phthalate as a plasticizer (DB
P) and ethanol as a solvent are added to form a slurry. This slurry was prepared to a thickness of 0.12 by the doctor blade method.
A sheet of mm is produced, several sheets of this sheet are laminated, surface pressed, debindered, and fired at 850 to 950 ° C.

本発明においては焼成は一般の焼成炉を使用して大気
中で焼成でき、還元性雰囲気など特別の設備、工夫は必
要ない。
In the present invention, firing can be performed in the air using a general firing furnace, and no special equipment or device such as a reducing atmosphere is required.

〔実施例〕〔Example〕

実施例1〜15、比較例1〜11 上記した水酸化アルミニウムと非晶質シリカから得ら
れたムライト粉末に、酸化塩、非晶質シリカ、酸化ホウ
素、酸化アルミニウムを表1に示す割合で製造したホウ
ケイ酸鉛とを表1に示す割合で配合し、PVBB、DBPおよ
びエタノールを加えてスラリーをつくり、このスラリー
からドクターブレード法により厚さ0.12mmのシートを作
製した。
Examples 1 to 15 and Comparative Examples 1 to 11 Oxide salts, amorphous silica, boron oxide, and aluminum oxide were produced in the proportions shown in Table 1 on mullite powder obtained from the above-described aluminum hydroxide and amorphous silica. The resulting lead borosilicate was blended in the ratio shown in Table 1, and PVBB, DBP and ethanol were added to form a slurry, and a sheet having a thickness of 0.12 mm was produced from the slurry by a doctor blade method.

得られたシートを10枚積層し、その積層体を80℃で10
分間面プレスした。次いで350℃、60分間脱バインダー
し、引続き850〜950℃、15分間焼成した。焼成体を10×
10×1mmに加工した後、Ag電極を塗布し、700℃にて焼付
けた。この試料について誘電率及び誘電損失を25℃に
て、周波数1MHzで測定した。結果を表1に併記した。
Ten sheets obtained were laminated, and the laminated body was heated at 80 ° C. for 10 hours.
The face was pressed for minutes. Next, the binder was removed at 350 ° C. for 60 minutes, followed by baking at 850 to 950 ° C. for 15 minutes. 10x fired body
After processing to 10 × 1 mm, an Ag electrode was applied and baked at 700 ° C. The dielectric constant and the dielectric loss of this sample were measured at 25 ° C. at a frequency of 1 MHz. The results are shown in Table 1.

実施例16 実施例1で作製したシートを用いて第1図のように内
部配線した8層基板を作製し(焼成温度900℃)上部電
極と下部電極との導通を調べたところ、導通不良のない
良好な基板であった。
Example 16 Using the sheet prepared in Example 1, an eight-layer substrate with internal wiring as shown in FIG. 1 was prepared (sintering temperature: 900 ° C.), and the conduction between the upper electrode and the lower electrode was examined. There was no good substrate.

またこの基板の熱膨張係数を室温から500℃の範囲で
測定したところ、4.1×10-6/℃であった。
The coefficient of thermal expansion of this substrate measured at room temperature to 500 ° C. was 4.1 × 10 −6 / ° C.

〔発明の効果〕〔The invention's effect〕

本発明によればムライト系セラミックスとしてガラス
にホウケイ酸鉛ガラスを使用することにより低温で焼成
することが可能となり、導体に銅を使用する必要がない
ため、焼成を還元性雰囲気で行わなくてすみ、特別の焼
成炉を要しない。また誘電率も小さく、熱膨張係数も小
さく良好な多層配線基板を製造することができる。
According to the present invention, the use of lead borosilicate glass for the glass as the mullite ceramic makes it possible to fire at a low temperature, and there is no need to use copper for the conductor, so that firing does not have to be performed in a reducing atmosphere. No special firing furnace is required. Further, a good multilayer wiring board having a small dielectric constant and a small coefficient of thermal expansion can be manufactured.

【図面の簡単な説明】[Brief description of the drawings]

第1図は実施例16における内部配線した8層基板の1例
の断面図である。 1……スルーホール導体(Ag) 2……内部導体(Ag) 3……上部外部電極 3′……下部外部電極 4……絶縁体シート
FIG. 1 is a cross-sectional view of an example of an eight-layer board with internal wiring according to the sixteenth embodiment. DESCRIPTION OF SYMBOLS 1 ... Through-hole conductor (Ag) 2 ... Internal conductor (Ag) 3 ... Upper external electrode 3 '... Lower external electrode 4 ... Insulator sheet

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】PbO40〜70wt%、SiO220〜50wt%、B2O35〜
15wt%、Al2O31〜10wt%を成分とするガラス粉末30〜70
wt%と、ムライト粉末70〜30wt%とから成る混合粉末を
シート成形し、850〜950℃で焼成することを特徴とする
低温焼成基板の製造方法。
1. PbO 40 to 70 wt%, SiO 2 20 to 50 wt%, B 2 O 3 5 to
15 wt%, glass powder 30-70 to Al 2 O 3 1~10wt% of component
A method for producing a low-temperature fired substrate, comprising forming a mixed powder comprising wt% and 70 to 30 wt% of mullite powder into a sheet and firing at 850 to 950 ° C.
JP63139465A 1988-06-08 1988-06-08 Method for manufacturing low-temperature fired substrate Expired - Lifetime JP2622582B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63139465A JP2622582B2 (en) 1988-06-08 1988-06-08 Method for manufacturing low-temperature fired substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63139465A JP2622582B2 (en) 1988-06-08 1988-06-08 Method for manufacturing low-temperature fired substrate

Publications (2)

Publication Number Publication Date
JPH01308867A JPH01308867A (en) 1989-12-13
JP2622582B2 true JP2622582B2 (en) 1997-06-18

Family

ID=15245866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63139465A Expired - Lifetime JP2622582B2 (en) 1988-06-08 1988-06-08 Method for manufacturing low-temperature fired substrate

Country Status (1)

Country Link
JP (1) JP2622582B2 (en)

Also Published As

Publication number Publication date
JPH01308867A (en) 1989-12-13

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