JP2622582B2 - Method for manufacturing low-temperature fired substrate - Google Patents
Method for manufacturing low-temperature fired substrateInfo
- Publication number
- JP2622582B2 JP2622582B2 JP63139465A JP13946588A JP2622582B2 JP 2622582 B2 JP2622582 B2 JP 2622582B2 JP 63139465 A JP63139465 A JP 63139465A JP 13946588 A JP13946588 A JP 13946588A JP 2622582 B2 JP2622582 B2 JP 2622582B2
- Authority
- JP
- Japan
- Prior art keywords
- mullite
- powder
- temperature fired
- fired substrate
- manufacturing low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は焼成温度が低く、導体に銀を使用できる多層
配線基板の製造方法に関し、さらに詳しくはムライトと
ホウケイ酸鉛ガラスの混合粉末を低温焼成する基板の製
造方法に関する。Description: FIELD OF THE INVENTION The present invention relates to a method for producing a multilayer wiring board having a low firing temperature and capable of using silver as a conductor. More specifically, a mixed powder of mullite and lead borosilicate glass is cooled to a low temperature. The present invention relates to a method for manufacturing a substrate to be fired.
従来、セラミック多層基板としてムライト系セラミッ
クスはアルミナ系セラミックスに比べ誘電率が小さく、
熱膨張係数が小さいことから有用であるが、高純度ムラ
イトが得難いためアルミナ系セラミック基板が大勢を占
めていた。Conventionally, as a ceramic multilayer substrate, mullite ceramics have a smaller dielectric constant than alumina ceramics,
Although useful because of its low coefficient of thermal expansion, it is difficult to obtain high-purity mullite, and alumina-based ceramic substrates occupy the majority.
しかし近時高純度ムライトが製造されるようになった
ため、ムライトとけい酸アルミニウムあるいはけい酸ア
ルミニウムマゲネシウムを主成分とするガラス粉末とか
らセラミックス焼結体が製造されるようになった(特開
昭57−115895号など)。However, recently, since high-purity mullite has been produced, ceramic sintered bodies have been produced from mullite and glass powder containing aluminum silicate or aluminum magnesium silicate as a main component (Japanese Unexamined Patent Publication No. No. 57-115895).
しかし上記ムライト系セラミックス焼結体は1400〜16
00℃という高い焼成温度を要するため、特別の焼成炉を
必要とし、還元性雰囲気での焼成しかできなかった。However, the above mullite ceramic sintered body is 1400-16
Since a high sintering temperature of 00 ° C. is required, a special sintering furnace is required, and sintering can only be performed in a reducing atmosphere.
そのためムライト粉末と混合するガラス粉末について
種々検討されホウケイ酸ガラスを使用することが提案さ
れた。しかしこのものは誘電率は4.8度と小さいもの
の、焼成温度は改善されたとはいえ、1000℃程度は必要
であるため多層配線基板に使用する場合、導体に銅を用
いなければならず、従って還元性雰囲気での焼成の余儀
なく、特別の焼成炉を必要とするという問題は解決され
ていない。Therefore, glass powder mixed with mullite powder has been studied in various ways, and it has been proposed to use borosilicate glass. However, although this has a small dielectric constant of 4.8 degrees, although the firing temperature has been improved, it must be used at about 1000 degrees Celsius. The problem of necessitating firing in a neutral atmosphere and requiring a special firing furnace has not been solved.
そこで本発明者らは導体に銀の使用可能な950℃以下
の焼成温度で大気中焼成できるムライト系セラミックス
を得るべく研究を重ねた結果、ムライト粉末と混合する
ガラス粉末としてホウケイ酸鉛ガラスを用いることによ
り目的を達し、次に述べる発明に到達した。Therefore, the present inventors have repeatedly studied to obtain mullite ceramics that can be fired in the air at a firing temperature of 950 ° C. or less where silver can be used as a conductor, and use lead borosilicate glass as a glass powder to be mixed with mullite powder Thus, the object has been achieved, and the invention described below has been achieved.
すなわち本発明はPbO40〜70wt%、SiO220〜50wt%、B
2O35〜15wt%、Al2O31〜10wt%を成分とするガラス粉末
30〜70wt%と、ムライト粉末70〜30wt%とから成る混合
粉末をシート成形し、850〜950℃で焼成することを特徴
とする低温焼成基板の製造方法を要旨とするものであ
る。That is, the present invention relates to 40 to 70 wt% of PbO, 20 to 50 wt% of SiO2,
Glass powder containing 2 to 15 wt% of 2 O 3 and 1 to 10 wt% of Al 2 O 3
A gist of the present invention is a method for producing a low-temperature fired substrate, wherein a mixed powder comprising 30 to 70 wt% and mullite powder 70 to 30 wt% is formed into a sheet and fired at 850 to 950 ° C.
本発明において使用するホウケイ酸鉛ガラスはPbO40
〜70wt%、SiO220〜50wt%、B2O35〜15wt%、Al2O31〜1
0wt%を成分とするものである。このガラスをつくるに
は酸化鉛(Pb3O4)、非晶質シリカ(SiO2)、酸化ホウ
素(B2O3)、酸化アルミニウム(Al2O3)の所定量をボ
ールミルなどで乾式混合し、電気炉にて1400℃で溶融し
た後、溶融物を水中に投入して急冷する。得られたガラ
ス塊を振動ミル(媒体ZrO2製)で湿式粉砕し乾燥してガ
ラス粉末を得る。ガラス粉末の平均粒径は1.0μm、最
大粒径は4.7μmであり、軟化温度は600℃程度である。The lead borosilicate glass used in the present invention is PbO40
~70wt%, SiO 2 20~50wt%, B 2 O 3 5~15wt%, Al 2 O 3 1~1
0 wt% is a component. To make this glass, dry mixing of lead oxide (Pb 3 O 4 ), amorphous silica (SiO 2 ), boron oxide (B 2 O 3 ), and aluminum oxide (Al 2 O 3 ) in a ball mill Then, after melting at 1400 ° C. in an electric furnace, the melt is put into water and rapidly cooled. The obtained glass lump is wet-pulverized by a vibration mill (made of medium ZrO 2 ) and dried to obtain a glass powder. The average particle size of the glass powder is 1.0 μm, the maximum particle size is 4.7 μm, and the softening temperature is about 600 ° C.
一方ムライト粉末は水酸化アルミニウムと非晶質シリ
カをAl2O3の割合が71.8wt%、残りがSiO2となるように
配合し、湿式混合し、乾燥した後、1600℃で1時間仮焼
し、得られた仮焼物を振動ミル(媒体 ムライト製)で
粉砕して得る。ムライト粉末の平均粒径は0.2μm、最
大粒径は7μmであった。On the other hand, the mullite powder was prepared by mixing aluminum hydroxide and amorphous silica in such a manner that the proportion of Al 2 O 3 was 71.8 wt% and the remainder was SiO 2 , wet-mixed, dried and calcined at 1600 ° C. for 1 hour. Then, the obtained calcined product is pulverized with a vibration mill (made of medium Mullite) to obtain. The average particle size of the mullite powder was 0.2 μm, and the maximum particle size was 7 μm.
本発明の基板の製造方法の一例を示すと、ムライト粉
末30〜70wt%にホウケイ酸鉛ガラス粉末70〜30%の配合
割合で配合し、バインダーとしてポリビニルブチラール
(PVB)、さらに可塑剤としてジブチルフタレート(DB
P)および溶剤としてエタノールを加えてスラリーとす
る。このスラリーをドクターブレード法により厚さ0.12
mmのシートを作製し、このシートを数枚積層し面プレス
し脱バインダー後850〜950℃で焼成する。As an example of the method for producing the substrate of the present invention, a blend ratio of lead borosilicate glass powder of 70 to 30% to mullite powder 30 to 70% by weight, polyvinyl butyral (PVB) as a binder, and dibutyl phthalate as a plasticizer (DB
P) and ethanol as a solvent are added to form a slurry. This slurry was prepared to a thickness of 0.12 by the doctor blade method.
A sheet of mm is produced, several sheets of this sheet are laminated, surface pressed, debindered, and fired at 850 to 950 ° C.
本発明においては焼成は一般の焼成炉を使用して大気
中で焼成でき、還元性雰囲気など特別の設備、工夫は必
要ない。In the present invention, firing can be performed in the air using a general firing furnace, and no special equipment or device such as a reducing atmosphere is required.
実施例1〜15、比較例1〜11 上記した水酸化アルミニウムと非晶質シリカから得ら
れたムライト粉末に、酸化塩、非晶質シリカ、酸化ホウ
素、酸化アルミニウムを表1に示す割合で製造したホウ
ケイ酸鉛とを表1に示す割合で配合し、PVBB、DBPおよ
びエタノールを加えてスラリーをつくり、このスラリー
からドクターブレード法により厚さ0.12mmのシートを作
製した。Examples 1 to 15 and Comparative Examples 1 to 11 Oxide salts, amorphous silica, boron oxide, and aluminum oxide were produced in the proportions shown in Table 1 on mullite powder obtained from the above-described aluminum hydroxide and amorphous silica. The resulting lead borosilicate was blended in the ratio shown in Table 1, and PVBB, DBP and ethanol were added to form a slurry, and a sheet having a thickness of 0.12 mm was produced from the slurry by a doctor blade method.
得られたシートを10枚積層し、その積層体を80℃で10
分間面プレスした。次いで350℃、60分間脱バインダー
し、引続き850〜950℃、15分間焼成した。焼成体を10×
10×1mmに加工した後、Ag電極を塗布し、700℃にて焼付
けた。この試料について誘電率及び誘電損失を25℃に
て、周波数1MHzで測定した。結果を表1に併記した。Ten sheets obtained were laminated, and the laminated body was heated at 80 ° C. for 10 hours.
The face was pressed for minutes. Next, the binder was removed at 350 ° C. for 60 minutes, followed by baking at 850 to 950 ° C. for 15 minutes. 10x fired body
After processing to 10 × 1 mm, an Ag electrode was applied and baked at 700 ° C. The dielectric constant and the dielectric loss of this sample were measured at 25 ° C. at a frequency of 1 MHz. The results are shown in Table 1.
実施例16 実施例1で作製したシートを用いて第1図のように内
部配線した8層基板を作製し(焼成温度900℃)上部電
極と下部電極との導通を調べたところ、導通不良のない
良好な基板であった。 Example 16 Using the sheet prepared in Example 1, an eight-layer substrate with internal wiring as shown in FIG. 1 was prepared (sintering temperature: 900 ° C.), and the conduction between the upper electrode and the lower electrode was examined. There was no good substrate.
またこの基板の熱膨張係数を室温から500℃の範囲で
測定したところ、4.1×10-6/℃であった。The coefficient of thermal expansion of this substrate measured at room temperature to 500 ° C. was 4.1 × 10 −6 / ° C.
本発明によればムライト系セラミックスとしてガラス
にホウケイ酸鉛ガラスを使用することにより低温で焼成
することが可能となり、導体に銅を使用する必要がない
ため、焼成を還元性雰囲気で行わなくてすみ、特別の焼
成炉を要しない。また誘電率も小さく、熱膨張係数も小
さく良好な多層配線基板を製造することができる。According to the present invention, the use of lead borosilicate glass for the glass as the mullite ceramic makes it possible to fire at a low temperature, and there is no need to use copper for the conductor, so that firing does not have to be performed in a reducing atmosphere. No special firing furnace is required. Further, a good multilayer wiring board having a small dielectric constant and a small coefficient of thermal expansion can be manufactured.
第1図は実施例16における内部配線した8層基板の1例
の断面図である。 1……スルーホール導体(Ag) 2……内部導体(Ag) 3……上部外部電極 3′……下部外部電極 4……絶縁体シートFIG. 1 is a cross-sectional view of an example of an eight-layer board with internal wiring according to the sixteenth embodiment. DESCRIPTION OF SYMBOLS 1 ... Through-hole conductor (Ag) 2 ... Internal conductor (Ag) 3 ... Upper external electrode 3 '... Lower external electrode 4 ... Insulator sheet
Claims (1)
15wt%、Al2O31〜10wt%を成分とするガラス粉末30〜70
wt%と、ムライト粉末70〜30wt%とから成る混合粉末を
シート成形し、850〜950℃で焼成することを特徴とする
低温焼成基板の製造方法。1. PbO 40 to 70 wt%, SiO 2 20 to 50 wt%, B 2 O 3 5 to
15 wt%, glass powder 30-70 to Al 2 O 3 1~10wt% of component
A method for producing a low-temperature fired substrate, comprising forming a mixed powder comprising wt% and 70 to 30 wt% of mullite powder into a sheet and firing at 850 to 950 ° C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63139465A JP2622582B2 (en) | 1988-06-08 | 1988-06-08 | Method for manufacturing low-temperature fired substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63139465A JP2622582B2 (en) | 1988-06-08 | 1988-06-08 | Method for manufacturing low-temperature fired substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01308867A JPH01308867A (en) | 1989-12-13 |
JP2622582B2 true JP2622582B2 (en) | 1997-06-18 |
Family
ID=15245866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63139465A Expired - Lifetime JP2622582B2 (en) | 1988-06-08 | 1988-06-08 | Method for manufacturing low-temperature fired substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2622582B2 (en) |
-
1988
- 1988-06-08 JP JP63139465A patent/JP2622582B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH01308867A (en) | 1989-12-13 |
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