JP2622378C - - Google Patents

Info

Publication number

JP2622378C

JP2622378C JP2622378C JP 2622378 C JP2622378 C JP 2622378C JP 2622378 C JP2622378 C JP 2622378C

Authority

JP

Japan

Prior art keywords

region

conductivity type

depth

polygonal

forming

Prior art date

1999-07-12

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired - Lifetime

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• 238000004519 manufacturing process Methods 0.000 claims description 17
• 239000012535 impurity Substances 0.000 claims description 13
• 239000000463 material Substances 0.000 claims description 11
• 239000004065 semiconductor Substances 0.000 claims description 8
• 230000000873 masking Effects 0.000 claims description 7
• 235000012431 wafers Nutrition 0.000 description 29
• 238000009792 diffusion process Methods 0.000 description 15
• 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
• 229920005591 polysilicon Polymers 0.000 description 8
• ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
• 238000005516 engineering process Methods 0.000 description 7
• 229910052782 aluminium Inorganic materials 0.000 description 6
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
• 229910052796 boron Inorganic materials 0.000 description 6
• 239000000969 carrier Substances 0.000 description 6
• 238000002513 implantation Methods 0.000 description 6
• 238000000034 method Methods 0.000 description 6
• 230000002829 reduced Effects 0.000 description 6
• 230000015556 catabolic process Effects 0.000 description 5
• 229910052751 metal Inorganic materials 0.000 description 5
• 239000002184 metal Substances 0.000 description 5
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
• 229910052710 silicon Inorganic materials 0.000 description 4
• 239000010703 silicon Substances 0.000 description 4
• 230000015572 biosynthetic process Effects 0.000 description 3
• 239000011248 coating agent Substances 0.000 description 3
• 238000000576 coating method Methods 0.000 description 3
• 239000004020 conductor Substances 0.000 description 3
• 238000010586 diagram Methods 0.000 description 3
• 230000000694 effects Effects 0.000 description 3
• 230000005684 electric field Effects 0.000 description 3
• 238000005755 formation reaction Methods 0.000 description 3
• 230000002093 peripheral Effects 0.000 description 3
• OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
• 239000000758 substrate Substances 0.000 description 3
• 230000005669 field effect Effects 0.000 description 2
• 238000002347 injection Methods 0.000 description 2
• 239000007924 injection Substances 0.000 description 2
• 238000005468 ion implantation Methods 0.000 description 2
• 238000005259 measurement Methods 0.000 description 2
• 238000001465 metallisation Methods 0.000 description 2
• 229910052698 phosphorus Inorganic materials 0.000 description 2
• 235000012239 silicon dioxide Nutrition 0.000 description 2
• 239000000377 silicon dioxide Substances 0.000 description 2
• 238000003892 spreading Methods 0.000 description 2
• 238000004804 winding Methods 0.000 description 2
• 125000004429 atoms Chemical group 0.000 description 1
• 239000012159 carrier gas Substances 0.000 description 1
• 230000002860 competitive Effects 0.000 description 1
• 230000000875 corresponding Effects 0.000 description 1
• 229910001385 heavy metal Inorganic materials 0.000 description 1
• 230000001771 impaired Effects 0.000 description 1
• 238000009413 insulation Methods 0.000 description 1
• 150000002500 ions Chemical class 0.000 description 1
• 230000000670 limiting Effects 0.000 description 1
• 229910044991 metal oxide Inorganic materials 0.000 description 1
• 150000004706 metal oxides Chemical class 0.000 description 1
• 230000004048 modification Effects 0.000 description 1
• 238000006011 modification reaction Methods 0.000 description 1
• TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 1
• 230000003071 parasitic Effects 0.000 description 1
• RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
• 125000004437 phosphorous atoms Chemical group 0.000 description 1
• 239000011574 phosphorus Substances 0.000 description 1
• 230000001681 protective Effects 0.000 description 1
• 238000004080 punching Methods 0.000 description 1
• 238000001356 surgical procedure Methods 0.000 description 1