JP2607727Y2 - Cathode sputtering equipment - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cathode sputtering apparatus for forming a thin film on a substrate using plasma in a vacuum process chamber. The present invention relates to a cathode sputtering apparatus having an axial hole disposed around (A-A).

[0002]

BACKGROUND OF THE INVENTION Numerous solutions are known from the prior art for producing thin films on substrates, for example for coating compact discs.

[0003] For example, from EP 0 163 445 a target for an apparatus for sputtering first and second cathode elements made of sputtered material in a vacuum is known. Here the second cathode element surrounds the first cathode element, and the geometry of the first and second elements is such that when they are in a vacuum,
(The surface is outside the surface of the first element), the first target element is a ring-shaped cathode, and the first emission surface of the second element is It is made to be conical.

Another publication, US Pat. No. 4,747,926, also describes a frusto-conical sputtering target for use in a magnetron sputtering apparatus. This target consists essentially of an integral target with two surface areas. These surface areas extend parallel to the central area of the flat substrate, the third inclined area (which connects the first and second areas), the support plate and the magnetic field generating means and have different diameters. Are formed.

In another publication, US Pat. No. 4,933,064, a magnetron type sputtering cathode and a permanent magnet device are described. The sputtering cathode has a target with at least two through concentric protrusions. The wall surface of this projection extends perpendicular to the sputtering surface. Permanent magnet arrangements have soft magnetic pole pieces, the field lines of which emanate from the pole pieces intersect the sputtering surface.

[0006] All of the known arrangements described above have the following disadvantages. First, relatively high power consumption is required to supply the sputtering current, and second, insufficient efficiency is achieved during sputtering.
That is, a large amount of target material is deposited not on the substrate but on the shield and the throttle. Third, because of the arc, the sputtering current supply SSV is very susceptible to failure, so that the interruption of the SSV occurs very frequently.

[0007]

The object of the present invention is to reduce or eliminate the above-mentioned drawbacks, to provide high operational safety and reliability,
It is to provide a device that is inexpensive to manufacture and operate.

[0008]

According to the invention, the object of the invention is that the front surface of the target to be sputtered, which faces the substrate to be coated, is divided into at least two regions, namely a flat, ring-shaped central region. And a front surface of the central region extends in a plane parallel to the flat target back surface, the outer region surrounds the central region in a ring shape, and the surface of the outer region has a central region. With respect to the surface of the target, the thickness of the target is inclined such that it is greater than the thickness of the center of the target at its outer peripheral edge in the circumferential direction. A second plasma is formed at the bent portion, a second plasma is formed on the surface of the ring-shaped outer region, and a sputtering groove is formed due to the spaced apart arrangement of the two plasmas. The sputtering groove is solved by a configuration which extends over the entire target width in the radial direction.

The present invention advantageously satisfies all the tasks posed.

With the cathode sputtering apparatus of the present invention, the proportion of particles deposited on the substrate is increased, the proportion of particles reaching the surrounding components is reduced, and the efficiency is increased measurably.

The roof-shaped fold on the front of the target provides an electrostatic accumulation of electrons at this fold, thereby satisfying the firing conditions for the first plasma ring.

This "bend" allows the elimination of the target flanks (known as middle-pole-target / ZPT cathode). This has the advantage that the entire target surface effectively acts as the active sputtering surface and there is no danger of the target surface being covered with particles.

[0013] With the clever configuration of the magnetic pole wire covering the entire surface of the target, a secondary plasma can be formed in addition to the first plasma. This secondary plasma is formed concentrically with the first plasma ring as a plasma ring,
Affects the expansion of the target erosion profile.

The erosion profile formed should be as wide as possible in depth to increase the life of the target and to keep the sputter power low even in widely eroded targets. For this reason, the magnetic field covering the entire surface of the target has a uniform surface intensity of the target. This forms a wide erosion groove.

With increasing target erosion, the sputtering process is controlled exclusively by parallel magnetic pole lines, resulting in a wide erosion profile. Progressive erosion forms a "target wall" around the periphery of the target, which acts on the electrostatic accumulation of electrons.

[0016] The required electrical connection power of the sputtering current supply can be significantly reduced. In the experimental device, about 3
What used to require 0 kW can now be made with half the power of about 15 kW with the target of the present invention.

The target materials usually used for coating small substrates such as compact discs are aluminum and AlCu alloys. According to the present invention,
It is conceivable to use different target materials for reactive sputtering.

Various embodiments of the present invention are possible. 1
Examples will be described in detail with reference to the drawings.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The target 1 to be sputtered (FIG. 1) is rotationally symmetric about the axis AA and consists essentially of a disk-shaped substrate. The base has a central shaft hole 2 and a flat target back surface 3. A flat central region 5 of the target front surface 4 is arranged parallel to the rear surface 3 and is surrounded by a ring-shaped external region 6. The surface of the outer region is inclined with respect to the surface of the central region 5 so that a vertical line that can be formed on the slope is focused and intersects at a point in front of the target 1.

FIG. 2 shows the left half of the target 1 of FIG. Here, two plasmas 7, 8 are shown. If a magnetic field (not shown for simplicity) is arranged accordingly, the two plasmas 7, 8 are formed in the form of a hose along the surface of the target 1. At this time, the plasma 7 is formed at a bent portion between the central region 5 and the ring-shaped outer region 6, and the second plasma 8 is formed in a ring of the outer region 6.

With this geometry of the two plasmas 7, 8, a sputtering groove 9 extending radially over the entire target width can be formed, resulting in ideal target efficiency.

[0022]

[Brief description of the drawings]

FIG. 1 is a schematic view of a target according to the present invention.

FIG. 2 is an enlarged view of a left half of FIG.

[Explanation of symbols]

 Reference Signs List 1 target 2 axial hole 3 target back 4 target front 7, 8 plasma

 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Ego Jichmann Germany Federal Republic of Germany Gernhausen de Itscholdensstraße 31 (56) References JP-A-60-152671 (JP, A) JP-A-61-183467 (JP, A) JP-A-4-318166 (JP, A) JP-A-59-229480 (JP, A) JP-A-3-28369 (JP, A) JP-B-58-10989 (JP, B2)

Claims (1)

(57) [Scope of request for utility model registration] 1. A target for a cathode sputtering apparatus for forming a thin film on a substrate using plasma in a vacuum process chamber, wherein the target is integrally and rotationally symmetric, and has a rotation axis (A- In a target for a cathode sputtering apparatus having an axial hole (2) arranged around A), the target front side (4) to be sputtered, facing the substrate to be coated, has at least two regions. A flat, ring-shaped central area (5) and an outer area (6).
Is divided into, the surface of the central region extends parallel plane to the flat target back surface (3), wherein the outer region surrounds the central region (5) in a ring shape, the surface of the external region , to the surface of the central region (5) is inclined to be greater than the thickness of the target (D) is a target centered at its outer edge portion of the circumferential thickness (d), target
In the front (4) of the slot, the first plasma (7)
(5) formed at a bent portion between the outer region (6) and the
2 plasma (8) is formed on the surface of the ring-shaped outer region (6)
And the two plasmas (7, 8) are spaced apart from each other.
The sputtering groove (9) is formed by the placement, and the spa
The cutter groove extends radially over the entire target width.
1. A target for a cathode sputtering apparatus, comprising: 2. A two plasma (7,8) are cathode sputtering apparatus target according to claim 1, wherein is configured in a ring shape.