JPS63149374A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS63149374A JPS63149374A JP29717086A JP29717086A JPS63149374A JP S63149374 A JPS63149374 A JP S63149374A JP 29717086 A JP29717086 A JP 29717086A JP 29717086 A JP29717086 A JP 29717086A JP S63149374 A JPS63149374 A JP S63149374A
- Authority
- JP
- Japan
- Prior art keywords
- target
- center
- permanent magnet
- permanent magnets
- annular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 230000004907 flux Effects 0.000 abstract description 13
- 230000005684 electric field Effects 0.000 abstract description 6
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 235000014276 Diplazium esculentum Nutrition 0.000 description 1
- 244000108321 Diplazium esculentum Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔概要〕 マグネトロンスパッタ装置の改良である。[Detailed description of the invention] 〔overview〕 This is an improvement on magnetron sputtering equipment.
反応室をなす真空容器中に、ターゲットが半導体ウェー
ハと対向して設けられ、環状に配置される複数の永久磁
石または環状永久磁石が半導体ウェーハとは逆の側にタ
ーゲットと対向して極性がターゲットと平行の面内で法
線方向になるように回転可能に配置され、環状に配こさ
れる複数の永久磁石または環状永久磁石の中心がターゲ
ットの中心から偏心しており、環状に配置される複数の
永久磁石または環状永久磁石のいづれかの１点はターゲ
ットの中心と重なるように配置されているマグネトロン
スパッタ装置である。In a vacuum container forming a reaction chamber, a target is provided facing the semiconductor wafer, and a plurality of permanent magnets arranged in a ring or an annular permanent magnet are placed opposite the semiconductor wafer on the side opposite to the target, and the polarity of the target is set opposite to the semiconductor wafer. A plurality of permanent magnets arranged in an annular manner so as to be rotatable in a normal direction in a plane parallel to the target, or a plurality of annular permanent magnets whose centers are eccentric from the center of the target and This is a magnetron sputtering device in which one point of either the permanent magnet or the annular permanent magnet is arranged so as to overlap with the center of the target.
本発明は、マグネトロンスパッタ装置の改良に関する。 The present invention relates to improvements in magnetron sputtering equipment.
特に、ターゲットの一部領域のみがスバッ゛りされるこ
とも、また、一部領域に予期せぬ堆積がなされることも
なく、ターゲットの面の凹凸が甚だしくなくてターゲッ
トの使用効率が良好で、また、予期せぬ堆積物が落下し
て製造歩留りを低下するようなこともないようにするこ
とができるマグネトロンスパッタ装置に関する。In particular, the target is not blown away or unexpectedly deposited on a certain area, and the surface of the target is not extremely uneven, so the target can be used efficiently. The present invention also relates to a magnetron sputtering apparatus that can prevent unexpected deposits from falling and lowering manufacturing yield.
従来技術に係るマグネトロンスパッタ装置の１例を第７
図を参照して説明する０図において、１は反応室をなす
真空容器であり、アルゴンガス等が稀薄な状態で供給さ
れる。２はターゲットであり、堆積される材料例えば高
融点金属やそのシリサイド等よりなる平板である。３は
その上に堆積がなされるシリコンウェー／Ｘ等の半導体
ウェーハ等であり、ターゲット２と対向して相互に固定
して配置される。半導体ウェーハ等３からターゲット２
に向う方向に電界Ｅが印加される。An example of a magnetron sputtering apparatus according to the prior art is shown in the seventh example.
In FIG. 0, which will be explained with reference to the drawings, numeral 1 is a vacuum container forming a reaction chamber, and argon gas or the like is supplied in a diluted state. Reference numeral 2 denotes a target, which is a flat plate made of a material to be deposited, such as a high melting point metal or its silicide. Reference numeral 3 denotes a semiconductor wafer such as a silicon wafer/X on which deposition is to be performed, and is arranged facing the target 2 and fixed to each other. Target 2 from semiconductor wafer etc. 3
An electric field E is applied in a direction toward .
４は環状の永久磁石または環状に配置された複数の永久
磁石であり１図示するように、ターゲット２の面と平行
する面内で法線方向に磁束Ｈを発生する。この磁束Ｈは
、上記の電界Ｅによって飛行する帯電粒子の飛行経路を
回転させ、帯電粒子が反応室ｌ内に滞留する期間を長く
し、アルゴン原子をイオン化する機能を増大する。Reference numeral 4 denotes a ring-shaped permanent magnet or a plurality of permanent magnets arranged in a ring, which generates a magnetic flux H in the normal direction in a plane parallel to the plane of the target 2, as shown in the figure. This magnetic flux H rotates the flight path of the charged particles flying due to the electric field E, lengthens the period during which the charged particles remain in the reaction chamber 1, and increases the ability to ionize argon atoms.
この磁界発生手段として、環状の永久磁石または複数の
永久磁石を環状に配置し磁石中心をターゲットの中心か
ら偏心させた状態で回転して使用する理由は、ターゲッ
ト２の一部のみが深くスパッタされることを防止し、タ
ーゲットの利用効率が低下することを防止するとともに
、ウェーハ３に付着する被膜の膜厚を均一にするためで
ある。換言すれば、ターゲット表面において磁束Ｈがタ
ーゲットの面に平行する方向であると、その部分のみが
深くスパッタされるが、ターゲット表面において磁束Ｈ
がターゲットの面に直交する方向であると、スパッタは
全くなされない、環状永久磁石をターゲット中心を回転
中心として偏心して回転すると、環状の深くスパッタさ
れる領域と、スパッタがなされない領域とがターゲット
中心を中心として画いた円周に沿って移動するために、
ターゲット全域にわたって、平均化されてスパッタされ
る。しかし、偏心量が少ないとターゲット中央の領域で
は、磁束Ｈが常にターゲツト面とほぼ直交するために、
スパッタが行なわれない。The reason why an annular permanent magnet or a plurality of permanent magnets are arranged in an annular manner and rotated with the center of the magnet eccentric from the center of the target is used as the magnetic field generating means. This is to prevent the target usage efficiency from decreasing, and to make the thickness of the film adhered to the wafer 3 uniform. In other words, if the magnetic flux H on the target surface is parallel to the target surface, only that part will be sputtered deeply, but the magnetic flux H on the target surface
If the direction is perpendicular to the surface of the target, no sputtering will occur.If the annular permanent magnet is rotated eccentrically around the target center, the annular deep sputtering area and the non-sputtering area will be separated from the target. To move along the circumference drawn around the center,
Sputtering is averaged over the entire target area. However, if the amount of eccentricity is small, the magnetic flux H will always be almost perpendicular to the target surface in the center area of the target, so
Sputtering is not performed.
上記せる従来技術に係るマグネトロンスパッタ装置にお
いては、ターゲットの中心とその近傍が深くスパッタさ
れることはないが、逆に、このターゲットの中心に不必
要な堆積がなされ、この堆積物が剥離して浮遊し、半導
体ウェーハ上に付着し、突起等を形成する原因となり、
製造歩留りを低下する原因となっていた。In the magnetron sputtering apparatus according to the prior art mentioned above, the center of the target and its vicinity are not sputtered deeply, but on the contrary, unnecessary deposits are formed at the center of the target and this deposit is peeled off. It floats and adheres to the semiconductor wafer, causing the formation of protrusions, etc.
This caused a decrease in manufacturing yield.
本発明の目的は、複数の永久磁石が環状に配置されまた
は環状永久磁石が環状に配置されており、磁束の方向が
一部領域においてターゲットの面と直交しているマグネ
トロンスパッタ装置において、この磁束がターゲットの
面とほぼ直交している領域に堆積がなされることがなく
、その結果、その堆積物が落下して製造歩留りを低下す
ることのないようにする改良を提供することにある。An object of the present invention is to provide a magnetron sputtering apparatus in which a plurality of permanent magnets are arranged in a ring shape, or a plurality of ring-shaped permanent magnets are arranged in a ring shape, and the direction of the magnetic flux is orthogonal to the surface of a target in some regions. An object of the present invention is to provide an improvement in which the deposits are not deposited in a region substantially perpendicular to the plane of the target, and as a result, the deposits do not fall and reduce the manufacturing yield.
上記の目的を達成するために本発明が採った手段は、第
１図に示すように、環状に回転可能に配置される複数の
永久磁石または環状永久磁石４をターゲット２の回転中
心と偏心して配置し、このとき、永久磁石４のどこかの
１点とターゲット２の中心とが重なるようにし、この偏
心して配置された環状に配置された永久磁石または環状
永久磁石４をターゲット２の中心を回転中心として回転
することにある。As shown in FIG. 1, the means taken by the present invention in order to achieve the above object is as follows: As shown in FIG. At this time, one point of the permanent magnet 4 and the center of the target 2 overlap, and the eccentrically arranged annular permanent magnet or annular permanent magnet 4 is placed so that the center of the target 2 is aligned with the center of the target 2. It rotates around the center of rotation.
特に、環状永久磁石の断面形状または永久磁石を環状に
配置する配置形状が第２図に示すようにハート形にされ
ていると、極めて有利である。In particular, it is extremely advantageous if the cross-sectional shape of the annular permanent magnet or the arrangement shape of the annular arrangement of permanent magnets is heart-shaped as shown in FIG.
本発明は、磁束Ｈがターゲットの面と交叉し堆積がなさ
れない領域を時間的に変化させ、全体として平均化する
という着想を実験的に確認して完成したものである。The present invention was completed by experimentally confirming the concept of temporally changing the area where the magnetic flux H intersects with the surface of the target and no deposition occurs, and averaging the area as a whole.
第３図参照
図において、Ａは周辺の堆積が発生する領域であり、Ｂ
はスパッタされる二ローション領域であり、Ｃは中央部
の堆積が発生する領域である。In the diagram shown in FIG. 3, A is the area where peripheral deposition occurs, and B
is the two-lotion area that is sputtered and C is the area where central deposition occurs.
この中央部の堆積が発生する領域Ｃの半径ｙは。The radius y of the region C where the central deposition occurs is:
スパッタパワー、ｆｉｉ石の種類、磁極の配置方向（磁
束の方向がターゲットに平行か垂直か）、磁石の長さａ
、磁石とターゲット表面間の距離す等によっても変化す
るが、偏心して環状に配置される複数の永久磁石または
環状永久磁石の内側の端とターゲット中心との最短距＃
Ｘにより、大きく変化する。Sputter power, type of fii stone, magnetic pole arrangement direction (whether the direction of magnetic flux is parallel or perpendicular to the target), magnet length a
Although it varies depending on the distance between the magnet and the target surface, etc., the shortest distance between the inner edge of a plurality of eccentrically arranged annular permanent magnets or the center of the target and the center of the annular permanent magnet is #
It varies greatly depending on X.
Ｂ Ｈｍａ！が３０ＭＧＯｅである希土類磁石を使用し
、磁極方向をターゲツト面に平行し、磁石の幅ａを４０
−自とし、磁石とターゲット表面間の距ｍｂを３８ｍｍ
とし、ターゲット中心と磁石の外側の端との最大距離Ｃ
を １３０１１−とし、ターゲット表面（ｂ ＝ ３８
ｍｍ）での磁場の強さの水平方向成分の最大値を ４０
０ガウスとし、スパッタパワー５ＫＷ（ＤＣ）とし、タ
ーゲットの種類はタングステンとした場合、実験の結果
によれば。B Hma! A rare earth magnet with a diameter of 30MGOe is used, the magnetic pole direction is parallel to the target surface, and the width a of the magnet is 40MGOe.
− and the distance mb between the magnet and the target surface is 38 mm.
and the maximum distance C between the target center and the outer edge of the magnet
is 13011-, and the target surface (b = 38
The maximum value of the horizontal component of the magnetic field strength in mm) is 40
According to the experimental results, when the sputtering power was 0 Gauss, the sputtering power was 5KW (DC), and the type of target was tungsten.
第４図のグラフに示すように、ｘ＝−６層■のときｙ＝
ｏ■１となる。As shown in the graph of Figure 4, when x=-6 layers ■, y=
o■1.
このような実験を繰返して、第１図に示すように、永久
磁石４のどこかの１点がターゲット２の中心と重なるよ
うな配置であると、本発明の効果が認められることを確
認した。By repeating such experiments, it was confirmed that the effect of the present invention was observed when the permanent magnet 4 was arranged so that one point somewhere overlapped with the center of the target 2, as shown in Fig. 1. .
以下１図面を参照しつ一２本発明の実施例に係るスパッ
タ装置２例についてさらに説明する。Two examples of sputtering apparatuses according to embodiments of the present invention will be further described below with reference to the drawings.
１上ｊ
第１図参照
図において、１は反応室をなす真空容器であす、アルゴ
ンガス等が稀薄な状態で供給される。1, top j In the diagram shown in FIG. 1, reference numeral 1 denotes a vacuum vessel forming a reaction chamber, into which argon gas or the like is supplied in a diluted state.
２はターゲットであり、堆積される材料例えば高融点金
属やそのシリサイド等よりなる平板である。３はその上
に堆積がなされるシリコンウェー八等の半導体ウェー八
等であり、ターゲット２と対向して相互に固定して配置
される。半導体ウェーハ等３からターゲット２に向う方
向に電界Ｅが印加される。Reference numeral 2 denotes a target, which is a flat plate made of a material to be deposited, such as a high melting point metal or its silicide. Reference numeral 3 denotes a semiconductor wafer 8 such as a silicon wafer 8 on which deposition is to be performed, and is placed facing the target 2 and fixed to each other. An electric field E is applied in a direction from the semiconductor wafer etc. 3 toward the target 2.
第５図、第６図参照
４は環状の永久磁石または環状に配置された複数の永久
磁石であり、環状の永久磁石または環状に配置された複
数の永久磁石４の断面に平行する面内で法線方向に磁束
Ｈを発生する。磁束Ｈの方向は、求心的でも放射的でも
さしつかえない、この磁束Ｈは、上記の電界Ｅによって
飛行する電子の飛行経路を回転させ、電子が反応室１内
に滞留する期間を長くし、アルゴン原子をイオン化する
機能を増大する。Reference numeral 4 in FIGS. 5 and 6 indicates a ring-shaped permanent magnet or a plurality of permanent magnets arranged in a ring. Generates magnetic flux H in the normal direction. The direction of the magnetic flux H can be either centripetal or radial. This magnetic flux H rotates the flight path of the flying electrons due to the electric field E, lengthens the period during which the electrons stay in the reaction chamber 1, and Increases the ability to ionize atoms.
さらに、この環状磁界発生手段４は、そのどこかがター
ゲット２の中心と重なっており、この環状磁界発生手段
４はターゲット２の中心を回転中心として回転される。Further, the annular magnetic field generating means 4 overlaps the center of the target 2 somewhere, and the annular magnetic field generating means 4 is rotated about the center of the target 2.
そのため、ターゲット２の中心部のみが深くスパッタさ
れることもなく、また、その領域に堆積が発生すること
もない。Therefore, only the central part of the target 2 is not sputtered deeply, and no deposition occurs in that area.
１又ｊ
第２図参照
環状の永久磁石または環状に配置された複数の永久磁石
４の形状または配置をハート形にすると、本発明の効果
は極めて顕著であることが知られているが、１例として
図示するようなハート形にすることが望ましい。1 or j It is known that the effect of the present invention is extremely significant when the shape or arrangement of the annular permanent magnet or the plurality of annularly arranged permanent magnets 4 is made into a heart shape. As an example, it is desirable to have a heart shape as shown in the figure.
図において、Ｅはハートの中心とし、Ｆを回転中心とし
、文をハートの径とし、０をノ＼−トの中心Ｅと基準点
Ｇとを結ぶ方向からの回転角としたとき、回転中心Ｆか
らノ＼−トの周までの長さｒが式
％式％
をもって表しうるようにする。In the figure, when E is the center of the heart, F is the center of rotation, the sentence is the diameter of the heart, and 0 is the rotation angle from the direction connecting the center E of the note and the reference point G, the center of rotation is The length r from F to the circumference of the note can be expressed using the formula %.
実験の結果によれば、この場合、ターゲットが一様にス
パッタされて本発明の効果は極めて顕著になる。According to the experimental results, in this case, the target is sputtered uniformly and the effect of the present invention is extremely significant.
以上説明せるとおり１本発明に係るスパッタ装置は、反
応室をなす真空容器中に、ターゲットが半導体ウェーハ
と対向して設けられ、環状に配置される複数の永久磁石
または環状永久磁石が半導体ウェーハとは逆の側にター
ゲットと対向して極性がターゲットと平行の面内で法線
方向になるように回転可能に配置され、環状に配置され
る複数の永久磁石または環状永久磁石の中心がターゲッ
トの中心から偏心しており、環状に配置される複数の永
久磁石または環状永久磁石のいづれかの１点はターゲッ
トの中心と重なるように配置されているので、磁束がタ
ーゲットの面と直交する一部領域のみがスパッタされる
こともこの領域においてターゲット面玉に予期せぬ堆積
がなされることもなく、ターゲットの面はフラットに保
持されてターゲットの使用効率が向上し、その結果。As explained above, in the sputtering apparatus according to the present invention, a target is provided facing a semiconductor wafer in a vacuum container forming a reaction chamber, and a plurality of permanent magnets or annular permanent magnets arranged in an annular manner are arranged in a vacuum container forming a reaction chamber. is rotatably arranged facing the target on the opposite side so that the polarity is normal to the target in a plane parallel to the target, and the center of a plurality of permanent magnets arranged in a ring or annular permanent magnets is opposite to the target. It is eccentric from the center, and one point of the plurality of permanent magnets arranged in an annular shape or the annular permanent magnet is arranged so as to overlap with the center of the target, so the magnetic flux is only in a part of the area where it is orthogonal to the surface of the target. There is no sputtering or unintended deposition on the target surface in this area, and the target surface remains flat, improving target utilization.
その堆積物が落下して製造歩留りを低下することがない
。The deposits will not fall and reduce the manufacturing yield.
第１図は１本発明の一実施例に係るでグネトロンスパッ
タ装置の構成図である。
第２図は、本発明の他の実施例に係るマグネトロンスパ
ッタ装置の環状永久磁石または環状に配置される永久磁
石のハート形配置形状である。
第３図は、本発明の作用説明図である。
第４図は、本発明の作用確認試験の結果を示すグラフで
ある。
第５図は、本発明のマグネトロンスパッタ装置に使用さ
れる環状永久磁石の平面図である。
第６図は、本発明のマグネトロンスパッタ装置に使用さ
れる永久磁石が環状に配置された状態を示す平面図であ
る。
第７図は、従来技術に係るマグネトロンスパッタ装置の
構成図である。
ｌ・・・真空容器。
２日・ターゲット、
３・・・半導体ウェーハ等、
４・・・環状の永久磁石または環状に配置される永久磁
石。
＼１くツノ王−パ
こ〕、。
従来技術
第７図
第１図
ハート！立１−ＴＩ９；１尺′
第２図
ｉａｍｔｒしβ月唱
第３図
ｍｍ
詐用、４誌諷゛疲・ご東
第４図
〕 〔〜丘
第６図FIG. 1 is a block diagram of a gnetron sputtering apparatus according to an embodiment of the present invention. FIG. 2 shows a heart-shaped arrangement of annular permanent magnets or annularly arranged permanent magnets of a magnetron sputtering apparatus according to another embodiment of the present invention. FIG. 3 is an explanatory diagram of the operation of the present invention. FIG. 4 is a graph showing the results of an effect confirmation test of the present invention. FIG. 5 is a plan view of an annular permanent magnet used in the magnetron sputtering apparatus of the present invention. FIG. 6 is a plan view showing a state in which permanent magnets used in the magnetron sputtering apparatus of the present invention are arranged in an annular shape. FIG. 7 is a configuration diagram of a magnetron sputtering apparatus according to the prior art. l...Vacuum container. 2. Target; 3. Semiconductor wafer, etc.; 4. Annular permanent magnet or permanent magnet arranged in an annular shape. \1 Horned King - Pako]. Prior art Figure 7 Figure 1 Heart! Standing 1-TI9; 1 shaku' Fig. 2 iamtr and β Moonsong Fig. 3 mm Fraud, 4th magazine ゛ Literary fatigue, Goto Fig. 4] [~Oka Fig. 6
Claims (1)
して設けられる半導体ウェーハ（３）とが反応室をなす
真空容器中（１）に収容され該半導体ウェーハ（３）と
は逆の側に前記ターゲット（２）と対向して極性が前記
ターゲット（２）と平行の面内で法線方向になるように
、環状に回転可能に複数の永久磁石または環状永久磁石
（４）が配置されるスパッタ装置において、前記環状に
配置される複数の永久磁石または環状永久磁石（４）の
中心は前記ターゲット（２）の中心から偏心しており、
前記環状に配置される複数の永久磁石または環状永久磁
石（４）のいづれかの１点は前記ターゲット（２）の中
心と重なるように配置されていることを特徴とするスパ
ッタ装置。 ［２］前記環状に配置される複数の永久磁石または環状
永久磁石（４）の平面形状はハート形であることを特徴
とする特許請求の範囲第１項記載のスパッタ装置。[Claims] [1] A target (2) and a semiconductor wafer (3) provided facing the target (2) are housed in a vacuum container (1) forming a reaction chamber, and the semiconductor wafer (3) is housed in a vacuum container (1) forming a reaction chamber. 3) A plurality of permanent magnets or annular permanent magnets that are rotatable in an annular shape, facing the target (2) on the opposite side and having polarity in the normal direction in a plane parallel to the target (2). In the sputtering apparatus in which magnets (4) are arranged, the center of the plurality of annularly arranged permanent magnets or the annular permanent magnet (4) is eccentric from the center of the target (2),
A sputtering apparatus characterized in that one point of the plurality of annularly arranged permanent magnets or the annular permanent magnet (4) is arranged so as to overlap with the center of the target (2). [2] The sputtering apparatus according to claim 1, wherein the plurality of annularly arranged permanent magnets or the annular permanent magnet (4) has a heart-shaped planar shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29717086A JPS63149374A (en) | 1986-12-12 | 1986-12-12 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29717086A JPS63149374A (en) | 1986-12-12 | 1986-12-12 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63149374A true JPS63149374A (en) | 1988-06-22 |
Family
ID=17843088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29717086A Pending JPS63149374A (en) | 1986-12-12 | 1986-12-12 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63149374A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4995958A (en) * | 1989-05-22 | 1991-02-26 | Varian Associates, Inc. | Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile |
| US5108574A (en) * | 1991-01-29 | 1992-04-28 | The Boc Group, Inc. | Cylindrical magnetron shield structure |
| JPH04183857A (en) * | 1990-11-16 | 1992-06-30 | Tokuda Seisakusho Ltd | Structure of magnet for planar magnetron sputtering source |
| US5130005A (en) * | 1990-10-31 | 1992-07-14 | Materials Research Corporation | Magnetron sputter coating method and apparatus with rotating magnet cathode |
| JPH05263235A (en) * | 1992-03-19 | 1993-10-12 | Shibaura Eng Works Co Ltd | Magnet structure of planar type magnetron sputtering source |
| JPH06505051A (en) * | 1990-10-31 | 1994-06-09 | 東京エレクトロン株式会社 | Equipment with magnetron sputter coating method and rotating magnet cathode |
| JPH06264234A (en) * | 1991-09-12 | 1994-09-20 | Novellus Syst Inc | Magnetron sputtering device and method for providing magnetic flux |
| US5374343A (en) * | 1992-05-15 | 1994-12-20 | Anelva Corporation | Magnetron cathode assembly |
| US5409590A (en) * | 1989-04-17 | 1995-04-25 | Materials Research Corporation | Target cooling and support for magnetron sputter coating apparatus |
| US6024843A (en) * | 1989-05-22 | 2000-02-15 | Novellus Systems, Inc. | Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile |
| US6132565A (en) * | 1999-10-01 | 2000-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd | Magnetron assembly equipped with traversing magnets and method of using |
| US6258217B1 (en) | 1999-09-29 | 2001-07-10 | Plasma-Therm, Inc. | Rotating magnet array and sputter source |
| GB2379670A (en) * | 2001-09-12 | 2003-03-19 | Samsung Electronics Co Ltd | Sputtering Apparatus Using a Magnetic Field |
-
1986
- 1986-12-12 JP JP29717086A patent/JPS63149374A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5409590A (en) * | 1989-04-17 | 1995-04-25 | Materials Research Corporation | Target cooling and support for magnetron sputter coating apparatus |
| US4995958A (en) * | 1989-05-22 | 1991-02-26 | Varian Associates, Inc. | Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile |
| US6024843A (en) * | 1989-05-22 | 2000-02-15 | Novellus Systems, Inc. | Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile |
| US5130005A (en) * | 1990-10-31 | 1992-07-14 | Materials Research Corporation | Magnetron sputter coating method and apparatus with rotating magnet cathode |
| JPH06505051A (en) * | 1990-10-31 | 1994-06-09 | 東京エレクトロン株式会社 | Equipment with magnetron sputter coating method and rotating magnet cathode |
| JPH04183857A (en) * | 1990-11-16 | 1992-06-30 | Tokuda Seisakusho Ltd | Structure of magnet for planar magnetron sputtering source |
| US5108574A (en) * | 1991-01-29 | 1992-04-28 | The Boc Group, Inc. | Cylindrical magnetron shield structure |
| JPH06264234A (en) * | 1991-09-12 | 1994-09-20 | Novellus Syst Inc | Magnetron sputtering device and method for providing magnetic flux |
| JPH05263235A (en) * | 1992-03-19 | 1993-10-12 | Shibaura Eng Works Co Ltd | Magnet structure of planar type magnetron sputtering source |
| US5374343A (en) * | 1992-05-15 | 1994-12-20 | Anelva Corporation | Magnetron cathode assembly |
| US6258217B1 (en) | 1999-09-29 | 2001-07-10 | Plasma-Therm, Inc. | Rotating magnet array and sputter source |
| US6132565A (en) * | 1999-10-01 | 2000-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd | Magnetron assembly equipped with traversing magnets and method of using |
| GB2379670A (en) * | 2001-09-12 | 2003-03-19 | Samsung Electronics Co Ltd | Sputtering Apparatus Using a Magnetic Field |
| GB2379670B (en) * | 2001-09-12 | 2003-10-22 | Samsung Electronics Co Ltd | Sputtering apparatus for forming a metal film using a magnetic field |
| US6723215B2 (en) | 2001-09-12 | 2004-04-20 | Samsung Electronics Co., Ltd. | Sputtering apparatus for forming a metal film using a magnetic field |
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