JP2606416B2 - Method of forming resistor layer on insulating substrate surface and metal organic resistor film - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION A. Object of the Invention 1) Industrial application field The present invention relates to a technique for forming a resistor layer on the surface of an insulating substrate.

2. Description of the Related Art Conventionally, in various electronic components such as a hybrid IC and a thermal head, an insulating substrate having a resistor formed on a surface is used. During the process of forming a resistor on the surface of the insulating substrate, a resistor layer is formed on the surface of the insulating substrate. Therefore, the technique of the present invention is used in the course of forming a resistor on the surface of an insulating substrate used for the various electronic components.

2) Conventional Technology Conventionally, in order to improve the performance of electronic components such as hybrid ICs and thermal heads, it is necessary to form a resistor having a small variation in resistance value and a high dot density on the surface of an insulating substrate. And the resistor on the surface of the insulating substrate,
Usually, since the resistor is formed from the resistor layer formed on the surface of the insulating substrate, the characteristics of the resistor (uniformity of resistance value, etc.)
Is determined by the characteristics of the resistor layer.

As a method of forming a resistor layer on the insulating substrate,
There are known a method using a thick film technique such as screen printing and a method using a thin film technique such as sputtering. Since the thick film technology has lower production equipment and higher productivity than the thin film technology, it is advantageous if a resistor having desired characteristics can be formed from a resistor layer formed by the thick film technology. Therefore, in order to obtain a resistor having excellent characteristics at low cost, it is necessary to form a resistor layer having excellent characteristics on the surface of the insulating substrate by a thick film technique.

Therefore, a resistor layer with excellent characteristics is provided on the insulating substrate surface.
Conventional MOD (Metalo-Organ)
ic deposition) method (see, for example, JP-A-1-220402).

3) Problems to be Solved by the Invention In the conventional MOD method, a metal organic resistor material for forming a resistor layer is directly applied on an insulating substrate by a thick film technique such as screen printing. In such a method, it is difficult to uniformly apply the metal-organic resistor material to a long substrate of A4 size or more, and the thickness of the metal-organic resistor material directly applied to the insulating substrate surface causes unevenness. (That is, the thickness of the resistor layer becomes non-uniform due to warpage of the insulating substrate or the like). When an insulating substrate on which such a metal organic resistor material layer having unevenness in thickness is formed is used, the resistance value of a resistor formed therefrom varies greatly. The insulating substrate having a large variation in the resistance value of the resistor formed on the surface needs to be removed in a product inspection stage after the electrodes and the like are formed on the insulating substrate. When the electrodes and the like are formed on the surface of the insulating substrate and then the insulating substrate is removed, the work performed up to that point is wasted, and there is a problem that the production efficiency is deteriorated.

The present invention has been made in view of the above circumstances, and an object of the present invention is to make it possible to form a resistor layer having a uniform thickness on the surface of an insulating substrate by using an inexpensive and highly productive thick film technology.

B. Configuration of the Invention 1) Means for Solving the Problems In order to solve the above problems, a method for forming a resistor layer on an insulating substrate according to a first invention of the present application is a method for forming a resistor on a film body and a surface of the film body. A metal-organic resistor film composed of a metal-organic resistor layer was produced, and the metal-organic resistor layer of the metal-organic resistor film was pressed against an insulating substrate surface, and then the film body was removed by removing the film body. A resistor is formed on the surface of the insulating substrate.

Further, the metal organic resistor film of the second invention of the present application is composed of a metal organic resistor layer pressed on an insulating substrate, and a film main body having the metal organic resistor displayed on the surface thereof, The main body is made of a material that is removed after the metal organic resistor layer is pressed on an insulating substrate.

2) Function In the resistor forming method of the first invention of the present application, a metal-organic resistor film composed of a film body and a metal-organic resistor layer formed on the surface of the film body is manufactured. Such a metal-organic resistor film,
It can be easily manufactured by applying a liquid or paste-like uniform metal organic material resistor layer on the surface of the film body and drying it. That is, for example, by pressing a roller coated with a metal-organic material on one surface of a conveyed film main body at a constant pressure, a uniform metal-organic resistor material is relatively easily coated on one surface of the film main body. be able to. By drying the metal organic resistor material applied to one surface of the film main body, the metal organic resistor film having a uniform metal organic resistor layer can be easily manufactured. Further, when a liquid or paste-like uniform metal-organic resistor material is applied to the surface of the film body, if a long, large-area film body is used, a large amount of the metal-organic resistor can be formed in one coating operation. A layer is obtained. In addition, the thickness of the organic resistor layer is made uniform by inspecting the thickness or surface roughness of the metal organic resistor layer of the manufactured metal organic resistor film and removing those having a non-uniform thickness. Only the metal organic resistor film can be selected and used. After pressing the uniform metal-organic resistor layer of the metal-organic resistor film thus obtained on the surface of the insulating substrate, and removing the film body, a resistor layer having a uniform thickness on the surface of the insulating substrate is obtained. It is formed.

The metal-organic resistor film of the second invention of the present application is used when performing the metal-organic resistor forming method of the first invention.

3) Embodiment Hereinafter, a case where an embodiment of a method for forming a resistor on an insulating substrate according to the present invention is applied to a thermal head will be described with reference to the drawings.

FIG. 1 is an overall explanatory view of a thermal head obtained by applying the present invention, FIG. 2 is a perspective view of a main part thereof, FIG. 3 is an enlarged view of a part III in FIG. 2, and FIG. 4A. Is a plan view of a main part of the thermal head, and FIGS. 4B and 4C are IV views of FIG. 4A.
FIG. 5 is a sectional view taken along line B-IVB and line IVC-IVC,
FIG. 12C is an explanatory view of one embodiment of the metal organic resistor layer forming method of the present invention applied to the thermal head manufacturing method.

As shown in FIG. 1, a thermal head H for performing thermal recording on a thermosensitive recording paper P conveyed along the outer periphery of a platen roll R includes a support plate 1. An insulating substrate 2 is adhered to the surface of the support plate 1 on the right side in FIG. 1 with an adhesive, and the insulating substrate 2 has an alumina main body 2a and a thickness of about 60 μm formed on the surface thereof. And an underglaze layer 2b. And the third
As shown in the figure, a plurality of heating resistors 3 are provided on the surface of the insulating substrate 2 in an island shape along the main scanning direction X.

On the surface of the insulating substrate 2, a strip-shaped common electrode main body 4a as shown in FIG. 3 and a large number of common electrode connection parts protruding in the sub-scanning direction Y from the common electrode main body 4a in a comb-like manner.
4b, and the plurality of common electrode connection portions
The individual electrodes 5 are formed at predetermined positions at positions opposed to 4b. The common electrode connection portions 4b and the individual electrodes 5 are connected to the heating resistors 3 arranged on the surface of the insulating substrate 2 along the main scanning direction X. A base end (the left end in FIG. 1) of the individual electrode 5 is formed as an IC connection terminal 5a for connecting to a driving IC described later.

A printed wiring board 6 is adhered to the surface of the support plate 1 on the left side in FIG. 1 with an adhesive, and external connection wiring 7 is formed on the surface of the printed wiring board 6. The external connection wiring 7 is connected to a socket 9 as a drive signal input terminal via a connector pin 8 penetrating the printed wiring board 6 on the input end side (the left side in FIG. 1). A driving IC is provided on a portion of the printed wiring board 6 close to the insulating substrate 2. The driving IC is connected to the IC connection terminal 5 a of the individual electrode 5 and the external connection wiring 7 by bonding wires 10 and 11. Is connected to

The IC and the bonding wires 10 and 11 are
2, the heating resistor 3, the common electrode 4, the individual electrode 5 and the like are provided with a wear-resistant layer 13 (first, third, fourth A, fourth B,
4C). Further, the protective resin 12 is protected by an aluminum cover 14.

The thermal head H includes the components indicated by the reference numerals 1 to 14 and the driving IC.

Next, a method for manufacturing the thermal head H having the configuration shown in FIGS. 4A to 4C will be described with reference to FIGS. 5 to 12C.

(A) Metal organic resistor film manufacturing process (see FIG. 5) As shown in FIG. 5, a metal organic resistor material 22 is applied to one surface of a film body 21 using a dip coater 20.

As the metal organic resistor material 22, for example, a mixture of the following solutions of a metal resinate (trade name) of Engelhard Co., Ltd. is used.

A-1123 (Ir organic material) # 28-FC (Si organic material) # 8365 (Bi organic material) L207-A (Pb organic material) # 118B (Sn organic material) A3808 (Al organic material) # 11-A ( B organic material) # 9428 (Ti organic material) # 5437 (Zr organic material) 40B (Ca organic material) # 137-C (Ba organic material) That is, the atomic ratio after firing each of the above solutions is Ir: Bi :
Si was mixed at a ratio such that Si = 1: 1: 1, and the viscosity was further measured using a solvent such as toluene, methyl chloroform, α-terpioneol, or butyl carbitol acetate.
Adjust to 10 cps.

As the film body 21, a polymer film such as a polyethylene terephthalate (PET) film is used. Then, a physical (mechanical) conventionally known as a coating technique is applied to the surface of the film main body 21 so that the adhesiveness with the mixed solution is improved.
Or perform a chemical treatment. Further, the film body 21
Is subjected to a solvent-resistant treatment with a coating material.

When the metal organic resistor material 22 is applied to the film body 21 by the dip coater 20 shown in FIG. 5, the thickness of the applied film is determined by the metal organic resistor material 22.
And the rotation speed of the 20 rolls 20a and 20b of the dip coater. Since the thickness of the coating film varies at the edge of the film body 21 and the portion cannot be used, the portion must be removed and used later. Therefore, the film body 21 having a width of 20 mm or more is used, including the part to be removed from the edge portion.

The film main body 21 coated with the metal organic resistor material 22 is dried for about 15 minutes in a drier 23 maintained at 70 ° C. as shown in FIG. At this time, the metal-organic resistor material 22 is solidified to form a metal-organic resistor layer 22 ′ on the surface of the film body 21. The metal organic resistor film F manufactured in this manner includes the film main body 21 and the metal organic resistor layer 2 formed on the surface thereof.
2 '.

The metal organic resistor film F is cut into an appropriate size by punching or a knife according to the size of the insulating substrate 2.

(B) forming a resistor layer on the surface of the insulating substrate 2 (sixth,
(See FIGS. 7A and 7B.) In FIG. 6, the metal organic resistor film F cut into an appropriate size is placed on the metal organic resistor layer 22 '.
Are arranged in contact with the surface of the insulating substrate 2. Then, the metal organic resistor film F is pressed against the surface of the insulating substrate 2 by the heater head 24 heated to about 120 ° C. At this time, the metal-organic resistor layer 22 ′ of the metal-organic resistor film F is slightly softened and pressed on the surface of the insulating substrate 2. The insulating substrate 2 to which the metal-organic resistor film F was bonded was heated at 800 ° C. in an infrared firing furnace (not shown).
Bake at peak temperature for about 10 minutes. Then, the film body 21 of the metal organic resistor film F is burned off in a firing furnace, and a resistor layer 3L shown in FIGS. 7A, 7B, and 7C is formed on the surface of the insulating substrate 2.

(C) Individual resistor formation step (see FIGS. 8A and 8B) Next, after forming a resist layer R1 on the resistor layer 3L, an exposure mask M1 is overlaid thereon to perform exposure and development. . Then, a resist pattern Rp for forming a heating resistor as shown in FIGS. 9A and 9B is obtained.

Next, when etching is performed using an etching solution (hydrofluoric nitric acid), a large number of heating resistors 3 shown in FIGS. 10A and 10B are obtained.

(D) Electrode forming step (see FIGS. 11A to 12C) Next, a metallo-organic gold paste manufactured by Noritake Co., Ltd. is applied to the surface of the insulating substrate 2 on which the heating resistor 3 is formed.
D27 is solid printed and fired to form a gold film 4L.

Next, as shown in FIGS. 11A and 11B, after forming a resist layer R2 on the metal film 4L, a mask M2 is overlaid, and exposure and development are performed to obtain a resist pattern for electrode formation. Next, etching was performed using an etching solution (iodine-potassium iodide solution) to remove the 12th, 12th, 12th, 12th, 12th,
The common electrode 4 and the individual electrode 5 as shown in the figure are formed.

(E) Wear-Resistant-Layer-Forming Step Next, a metal-organic material for forming a wear-resistant layer is screen-printed on the surface of the insulating substrate 2 on which the heating resistor 3, the common electrode 4, and the individual electrode 5 are formed. Print. The screen-printed insulating substrate 2 is dried and fired at about 800 ° C. in an infrared belt firing furnace to form an overcoat layer. This overcoat layer is formed in multiple layers as needed.

In this way, the components 3, 4 shown in FIGS.
The insulating substrate 2 having 4, 5, 13 and the like formed on the surface is obtained.

As described above, the embodiment of the method for forming a resistor layer on an insulating substrate according to the present invention has been described in detail. However, the present invention is not limited to the above embodiment, and the gist of the present invention described in the appended claims Various small design changes can be made within the range.

For example, as the film body 21 used for the metal organic resistor film F, it is possible to use a film of an appropriate material other than the polymer film, and when using a film body that does not burn off during firing,
It is also possible to form a metal organic resistor layer after forming a wax layer on the surface of the film main body so that the film main body is peeled off when the heater head is heated. In addition, as a method of applying the metal organic resistor material to the film body, it is possible to adopt an application means such as an air doctor coat, a roll coater, and a rod coater instead of the dip coating method. When using a high metal organic resistor material, a hot melt coater can be employed. Furthermore, the components of the metal-organic resistor material 22 composed of a mixed solution of various components can be various components other than those shown in the embodiments. Further, instead of forming the electrodes after forming the resistor layer on the surface of the insulating substrate 2, it is also possible to form the resistor layer on the surface of the insulating substrate 2 on which the electrodes are formed.

C. Effects of the Invention The above-described method for forming a resistor layer according to the first invention of the present application produces a metal-organic resistor film composed of a film body and a metal-organic resistor layer formed on the surface of the film body. After the metal organic resistor layer of the metal organic resistor film is pressed against the surface of the insulating substrate, the film body is removed to form a resistor layer on the surface of the insulating substrate. Therefore, before the metal organic resistor film is pressed against the insulating substrate, the metal organic resistor film can be inspected for thickness unevenness or the presence or absence of pinholes to remove defective products. Therefore, the workability is better than in the case where the metal-organic resistor layers are individually formed directly on the surfaces of a large number of insulating substrates and then defective products are removed. Defective products can also be dissolved in a solvent again and reused, and material waste can be reduced.

Furthermore, in the operation of manufacturing a metal organic resistor film by applying a metal organic resistor material to a film body, a large amount of metal organic resistor layers can be obtained at once by using a long, large-area film body. . Then, the operation of cutting the metal organic resistor film into an appropriate size and pressing it on the surface of the insulating substrate is simple and easy to automate. Therefore, the workability of producing a uniform resistor layer on the surface of the insulating substrate is also good. Furthermore, the present invention, in which the metal organic resistor film is cut into an appropriate size and pressure-bonded to the surface of the insulating substrate, can easily form a uniform resistor layer on the surface of the insulating substrate having a non-horizontal flat surface or a curved surface. it can.

Further, the metal-organic resistor film of the second invention of the present application described above can be used when carrying out the first invention.

[Brief description of the drawings]

FIG. 1 is an overall explanatory view of a thermal head to which an embodiment of a method of forming a resistor layer according to the present invention is applied, FIG. 2 is a perspective view of a main portion of the thermal head, and FIG. Fig. 4A is an enlarged view of three parts, Fig. 4A is a plan view of a main part of the thermal head, and Fig. 4B.
FIG. 4A is a cross-sectional view taken along the line IV B-IV B of FIG. 4A, and FIG.
FIG. 5 is an explanatory view of a method of manufacturing a metal-organic resistor film, and FIG. 6 is an explanatory view of a method of forming a resistor layer on the surface of an insulating substrate using the metal-organic resistor film. 7A to 12C are explanatory diagrams of a method of manufacturing the portion shown in FIGS. 4A to 4C. 2 ... insulating substrate, 3 ... heating resistor, 4 ... common electrode,
4a: Common electrode body, 4b: Common electrode connection, 5 ...
Individual electrode, 13 ... overcoat layer

 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-3-36049 (JP, A) JP-A-63-166554 (JP, A) JP-A-62-116164 (JP, A) JP-A-2- 72970 (JP, A) JP-A-1-307291 (JP, A) JP-A-63-77754 (JP, A) JP-A-63-74660 (JP, A) JP-A-1-220402 (JP, A) Actual opening 1962-23476 (JP, U)

Claims (2)

(57) [Claims] 1. A metal organic resistor film comprising a film main body and a metal organic resistor layer formed on the surface of the film main body is manufactured, and the metal organic resistor layer of the metal organic resistor film is insulated. A method of forming a resistor layer on the surface of an insulating substrate, comprising: forming a resistor on the surface of the insulating substrate by removing the film main body after pressing the film on the surface of the substrate. 2. A metal organic resistor layer pressed on an insulating substrate, and a film main body having the metal organic resistor formed on a surface thereof, wherein the film main body is formed of the metal organic resistor layer on the insulating substrate. A metal organic resistor film made of a material that is removed after being crimped thereon.