JP2606138C - - Google Patents

Info

Publication number

JP2606138C

JP2606138C JP2606138C JP 2606138 C JP2606138 C JP 2606138C JP 2606138 C JP2606138 C JP 2606138C

Authority

JP

Japan

Prior art keywords

aperture

metal film

thickness

electron beam

substrate

Prior art date

1999-06-07

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired - Lifetime

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• 229910052751 metal Inorganic materials 0.000 claims description 61
• 239000002184 metal Substances 0.000 claims description 61
• 238000010894 electron beam technology Methods 0.000 claims description 25
• 238000000609 electron-beam lithography Methods 0.000 claims description 7
• 239000000463 material Substances 0.000 claims description 7
• 230000001133 acceleration Effects 0.000 claims description 4
• 229910052719 titanium Inorganic materials 0.000 claims description 3
• 229910018594 Si-Cu Inorganic materials 0.000 claims description 2
• 229910008465 Si—Cu Inorganic materials 0.000 claims description 2
• 229910008599 TiW Inorganic materials 0.000 claims description 2
• 229910052802 copper Inorganic materials 0.000 claims description 2
• 238000007493 shaping process Methods 0.000 claims description 2
• 229910052709 silver Inorganic materials 0.000 claims description 2
• 229910052715 tantalum Inorganic materials 0.000 claims description 2
• 229910052721 tungsten Inorganic materials 0.000 claims description 2
• 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
• 239000000758 substrate Substances 0.000 description 35
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
• 229910052710 silicon Inorganic materials 0.000 description 11
• 239000010703 silicon Substances 0.000 description 11
• 238000005530 etching Methods 0.000 description 9
• 229910052581 Si3N4 Inorganic materials 0.000 description 4
• HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
• 238000010586 diagram Methods 0.000 description 4
• 238000004519 manufacturing process Methods 0.000 description 4
• 229920002120 photoresistant polymer Polymers 0.000 description 4
• 238000004088 simulation Methods 0.000 description 4
• 239000010953 base metal Substances 0.000 description 3
• 238000000034 method Methods 0.000 description 3
• 238000000342 Monte Carlo simulation Methods 0.000 description 2
• 238000001312 dry etching Methods 0.000 description 2
• 238000005516 engineering process Methods 0.000 description 2
• 238000001459 lithography Methods 0.000 description 2
• 238000000206 photolithography Methods 0.000 description 2
• 230000000694 effects Effects 0.000 description 1
• 150000002739 metals Chemical class 0.000 description 1
• 239000004065 semiconductor Substances 0.000 description 1
• 238000000926 separation method Methods 0.000 description 1
• 238000001039 wet etching Methods 0.000 description 1