JP2594172Y2 - Semiconductor device - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a shielding effect by combining a bump structure formed on a semiconductor chip and flip-chip assembly.

[0002]

2. Description of the Related Art In today's highly information-oriented society, the sophistication of social life and the development of electronics are progressing rapidly, and electronic devices that use digital technology, such as OA devices such as computers, video games, and calculators, are widely used. It is widespread. However, these electronic devices generate high-frequency pulse signals, which become noise and cause malfunctions in the device or other devices.

Therefore, conventionally, as a method of shielding a semiconductor chip from noise, the semiconductor chip is put in a metal housing (metal can) or put on a ceramic substrate covered with a metal film.

[0004]

In the above-described method, it is not possible to shield only a certain portion inside the chip, so that the size of the finished product is larger than the chip size. Also, the use of a metal can increases the number of parts and increases the cost.

An object of the present invention is to solve the above problems and to easily provide a chip size shield.

[0006]

In order to achieve the above object, the present invention comprises a chip on which bumps are formed, and a circuit board on which wiring having a connection portion with the bumps is formed. A semiconductor device having a structure connected to wiring by flip chip bonding, wherein a shielding bump is provided on a bump forming surface of the chip,
A ground potential wiring having a connection portion with the shield bump is provided on the circuit board, the shield bump and the ground potential wiring are connected by flip chip bonding, and a region on the chip requiring a shield is required. Are surrounded by the substrate of the chip, the ground potential wiring on the circuit board, and the bump for shielding.

A semiconductor device comprising a chip on which a bump is formed and a substrate on which a wiring having a connection portion with the bump is formed, wherein the bump is connected to the wiring by flip chip bonding. A bump for shielding is provided adjacent to the bump on the bump forming surface of the chip, a ground potential wiring having a connection portion with the bump for shielding is provided on the circuit board, and the bump for shielding is provided. The ground potential wiring is connected to the ground potential wiring by flip-chip bonding, and the area on the chip requiring a shield is surrounded by the chip substrate, the ground potential wiring on the circuit board, the shielding bump, and the bump. It is configured to be.

[0008]

With this structure, the portion requiring the shield is surrounded by the ground potential wiring of the circuit board on the lower side, the substrate (substrate) of the semiconductor chip on the upper side, and the side surfaces by the bumps. , Exerts a shielding effect.

[0009]

FIG. 1 shows an embodiment of the present invention. Shield bumps 3 are formed adjacent to the bumps 2 formed on the chip 1, and these are connected to the wirings 6 and 7 formed on the substrate 5 of the circuit board 4, respectively.

FIG. 2 is a diagram showing details of the chip 1, and the same reference numerals as those in FIG. 1 denote the same or corresponding components. The chip 1 has an active region formed on a substrate made of silicon or the like, on which wiring such as aluminum is provided via an insulating film. The active region and the wiring are connected through an opening in the insulating film, a protective film is formed on the entire surface of the wiring, and the bump 2 is formed through a contact hole formed in the protective film.
And the wiring are connected via a patterned base metal.

Reference numeral 3 denotes a shielding bump disposed adjacent to the bump 2. The base metal for the bump 2 is deposited and patterned, and at the same time, the base metal formed on the protective film is plated similarly to the bump 2. It is applied by a technique, and has the same planar shape as the metal base metal.

The smaller the gap between the shielding bumps 3 and the bumps 2, the less the noise can enter the region surrounded by the shielding bumps 3 and the bumps 2.
If it is about 20 μm, there is no problem in normal use. Because the wavelength of the noise is usually as small as 1000
μm, which is sufficiently small for this value.

FIG. 3 shows a circuit board on which the chip 1 is mounted by flip chip bonding. In this drawing, the same reference numerals as those in FIG. 1 indicate the same or corresponding components. Reference numeral 5 denotes a substrate made of ceramic or the like, and reference numerals 6 and 7 denote wirings. Reference numerals 6a and 7a denote connection portions with bumps and shielding bumps provided on a part of the wirings 6 and 7, respectively. The connection portions 6a and 7a are positioned so as to correspond to the bump 2 and the shielding bump 3 in FIG. 1, respectively, and have a shape facing the bump and the shielding bump. Wiring 7 is wiring 6
The wiring formed at the same time is different from the wiring 6 because it is connected to a ground potential (not shown). When the chip 1 is assembled on the circuit board 4, the shielding for the chip 1 shown in FIG. It is formed so as to cover the entire surface facing the region to be shielded surrounded by the bumps 3 (excluding the escape portion for maintaining insulation from the connection portion 6a).

[0014] The ground potential is supplied from a battery or a power supply when being provided on the substrate.

FIG. 4 shows the shape of the shielding bump when only a part of the chip is shielded. In FIG.
The same reference numerals as those shown in FIG.
Indicates an area to be shielded. The region A is a portion that is likely to generate noise or is easily affected by external noise, such as a digital circuit or a high-frequency circuit.

In such a case as well, circuit wiring is provided on the circuit board side corresponding to the shielding bumps 3 and the bumps 2. The wiring connected to the shielding bumps 3 is set to the ground potential and the chip is mounted on the circuit board. When assembled, the area A is covered. Then, as described above, the chip is assembled by flip chip bonding, and the chip is electrically connected to the circuit board and shielded.

Although the embodiment of the present invention has been described above, the present invention is not limited to this, and various modifications are possible. For example, in the above-described embodiment, a base metal is applied on the protective film and a shielding bump is formed thereon, but it may be on a wiring connected to the substrate and having a ground potential. In other words, the formation of the shielding bumps does not have to affect the chip electrically.

In the above embodiment, the case where bumps are provided on the chip side has been described. However, electric terminals are provided on the chip instead of the bumps, and through holes are provided on the circuit board.
The present invention is also applicable to a case where the electric terminal is fitted in the through hole. Further, in each of the embodiments, the shield bumps which are cut are shown. However, it is needless to say that the shield bumps are shielded even if they are continuous.

[Effect of the Invention] As described above, since the structure has a shielding effect using the bump and flip chip technology, the metal package required for the conventional shielding is not required, and the shielding is performed simultaneously with the connection of the electrodes. Can reduce material costs and man-hours. Further, since a partial shield in the chip can be performed, the impedance design becomes easy in the high frequency IC.

[Brief description of the drawings]

FIG. 1 is a diagram showing an embodiment of the present invention.

FIG. 2 is a diagram showing details of the chip of FIG. 1;

FIG. 3 is a diagram showing details of the circuit board of FIG. 1;

FIG. 4 is a diagram showing details of a chip used in another embodiment of the present invention.

Claims (2)

(57) [Scope of request for utility model registration] A semiconductor having a structure in which a chip on which a bump is formed and a circuit board on which a wiring having a connection portion with the bump is formed are connected to the wiring by flip chip bonding. An apparatus, wherein a bump for shielding is provided on a bump forming surface of the chip,
A ground potential wiring having a connection portion corresponding to the shield bump is provided on the circuit board, and the shield bump and the ground potential wiring are connected by flip chip bonding, and a shield on the chip is required. A semiconductor device, wherein a region is surrounded by a substrate of the chip, a ground potential wiring on the circuit board, and the bump for shielding. 2. A semiconductor device comprising a chip on which a bump is formed and a circuit board on which a wiring having a connection portion corresponding to the bump is formed, wherein the bump is connected to the wiring by flip chip bonding. A semiconductor device, wherein a shielding bump is provided adjacent to the bump on a bump forming surface of the chip, and a ground potential wiring having a connection portion with the shielding bump is provided on the substrate; And the ground potential wiring are connected by flip-chip bonding, and a region on the chip that requires a shield is surrounded by a substrate of the chip, a ground potential wiring on the circuit board, the shielding bump and the bump. A semiconductor device characterized in that: