JP2590341B2 - Coating method of thin film diamond - Google Patents
Coating method of thin film diamondInfo
- Publication number
- JP2590341B2 JP2590341B2 JP62218308A JP21830887A JP2590341B2 JP 2590341 B2 JP2590341 B2 JP 2590341B2 JP 62218308 A JP62218308 A JP 62218308A JP 21830887 A JP21830887 A JP 21830887A JP 2590341 B2 JP2590341 B2 JP 2590341B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- substrate
- thin film
- coating method
- film diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、気相合成法により合成された薄膜ダイヤモ
ンドを切削工具ならびに耐摩耗工具に適用するためのも
ので、金属或いは超硬合金などの基板表面に薄膜ダイヤ
モンドを強固に、かつ能率よく被覆するための基板の表
面処理に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention is for applying a thin film diamond synthesized by a gas phase synthesis method to a cutting tool and a wear-resistant tool, and is used for a metal or a cemented carbide. The present invention relates to a surface treatment of a substrate for firmly and efficiently coating a thin film diamond on the substrate surface.
ダイヤモンド薄膜が気相合成法により製作されるよう
になり、これを金属或いは超硬合金基板上に被覆し切削
工具や耐摩耗工具に適用しようとする試みが数多く行わ
れている。しかしこれらの基板上にダイヤモンドを膜状
に析出させることは難しく、析出速度も遅い。A diamond thin film has been produced by a vapor phase synthesis method, and many attempts have been made to coat it on a metal or cemented carbide substrate and apply it to a cutting tool or a wear-resistant tool. However, it is difficult to deposit diamond in a film on these substrates, and the deposition rate is low.
析出速度を高めるには、例えば特公昭62−27039号公
報に記載されているように基板表面をダイヤモンド粉末
のような玉硬度粉末で傷付け処理を施す方法がある。こ
の方法により傷付け処理を施さない場合に比べ、析出速
度は数倍向上する。しかし、基板とダイヤモンド薄膜と
の接着強度は未だ十分ではなく、薄膜ダイヤモンド被覆
工具として実用化することは難しい現状にある。In order to increase the deposition rate, for example, there is a method in which a substrate surface is scratched with a ball hardness powder such as diamond powder as described in Japanese Patent Publication No. 62-27039. By this method, the deposition rate is improved several times as compared with the case where no scratching treatment is performed. However, the bonding strength between the substrate and the diamond thin film is not yet sufficient, and it is difficult to put it into practical use as a thin film diamond coating tool.
薄膜ダイヤモンド被覆工具の実用買において大きな問
題は、ダイヤモンド薄膜と基板との接着を強固に保つこ
とである。薄膜ダイヤモンドと基板との接着力は基板の
表面処理方法ならびに基板材質に大きく左右される。A major problem in the practical use of thin film diamond coated tools is to maintain strong adhesion between the diamond thin film and the substrate. The adhesive strength between the thin film diamond and the substrate largely depends on the surface treatment method of the substrate and the material of the substrate.
前述した基板の傷付け処理は基板が、W,Mo,Siのよう
にダイヤモンドが比較的析出し易い材質の場合には、析
出速度の向上と共に基板との接着強度でも少なからぬ効
果を示すが、ダイヤモンドの析出し難い基板、例えば超
硬合金では十分な効果を発揮し得ない。このことが薄膜
ダイヤモンド被覆工具の実用化の大きな障害となってい
る。When the substrate is made of a material such as W, Mo, and Si, in which diamond is relatively easy to deposit, the above-described substrate scratching treatment has a considerable effect on not only the deposition rate but also the bonding strength with the substrate. A sufficient effect cannot be exerted on a substrate, such as a cemented carbide, which is difficult to precipitate. This is a major obstacle to the practical application of the thin film diamond coated tool.
又、傷付け処理は均一に再現性良く実施することが難
しく、特に基板が複雑な形状の場合に難しい。Further, it is difficult to perform the scratching process uniformly and with good reproducibility, particularly when the substrate has a complicated shape.
本発明の課題は基板材質に関らず基板と強固に接着し
たダイヤモンド薄膜を得るため、及び極めて速い析出速
度でダイヤモンド薄膜を得ることにある。An object of the present invention is to obtain a diamond thin film firmly bonded to a substrate irrespective of the material of the substrate and to obtain a diamond thin film at an extremely high deposition rate.
本発明の手段は金属或いは超硬合金基板表面にダイヤ
モンド微粒を油圧または超音波によって高密度かつ均一
に圧入するようにしたことである。Means of the present invention is to press-fit diamond fine particles uniformly and densely onto the surface of a metal or cemented carbide substrate by hydraulic pressure or ultrasonic waves.
本発明では基板表面に高密度で、しかも強固にダイヤ
モンド微粒が圧入されているので、気相合成法によりダ
イヤモンドが析出する時の核発生に大きなエネルギーを
必要としないこと、又、圧入されているダイヤモンド上
に低いエネルギーでダイヤモンドが析出するため、極め
て速い析出速度で、しかも黒鉛状炭素が析出することな
く薄状ダイヤモンドが形成されるのである。In the present invention, since diamond fine particles are densely and firmly pressed into the substrate surface, large energy is not required for nucleation when diamond is deposited by a gas phase synthesis method, and the press-fitting is performed. Since diamond is deposited on diamond with low energy, a thin diamond is formed at a very high deposition rate and without depositing graphitic carbon.
しかも、ダイモンド微粒が基板に強固に圧入されて、
基板材質に関らず基板に強く喰い込んでおり、アンカー
としての効果を発揮する。Moreover, the diamond fine particles are firmly pressed into the substrate,
Regardless of the material of the substrate, it is deeply entrapped in the substrate, and exhibits an effect as an anchor.
さらに、ダイヤモンド表面に析出した薄状ダイヤモン
ドの接着強度は他の基板材料の場合と比べて最も強いの
で、本発明による基板とその上に析出したダイヤモンド
薄膜との接着強度は非常に高い。Furthermore, since the bonding strength of the thin diamond deposited on the diamond surface is stronger than that of other substrate materials, the bonding strength between the substrate according to the present invention and the diamond thin film deposited thereon is very high.
更に本発明による処理を施した基板に対するダイヤモ
ンド薄膜の作成方法は、グロー放電CVD法、化学蒸着
法、プラズマ雰囲気蒸着法ならびにイオンビーム蒸着法
等公知の被覆法の何れを採用しても良く、同じ効果が得
られる。Further, the method of forming a diamond thin film on the substrate subjected to the treatment according to the present invention may employ any of known coating methods such as glow discharge CVD, chemical vapor deposition, plasma atmosphere vapor deposition, and ion beam vapor deposition. The effect is obtained.
実施例１…第１図に示した様に超硬合金（K10）基板
１上に粒径０〜１μｍのダイヤモンド粉末２を散布し、
第２図に示したように超音波ホーン３にてこのダイヤモ
ンド粉末を基板に圧入した。ダイヤモンド粒は１部粉砕
され、さらに微細になって基板上に緻密に分散して圧入
されている。Example 1 As shown in FIG. 1, a diamond powder 2 having a particle size of 0 to 1 μm was sprayed on a cemented carbide (K10) substrate 1,
As shown in FIG. 2, the diamond powder was pressed into the substrate with the ultrasonic horn 3. One part of the diamond grains is pulverized, further refined and densely dispersed and pressed into the substrate.
このようにして作成した基板を用いて、グロー放電CV
D法により第１表に示した条件でダイヤモンド薄膜を気
相成長させた。その結果、30分の成膜時間で４μｍのダ
イヤモンド薄膜が析出した。このダイヤモンド薄膜をス
カイフ盤を用いて研摩したところ、剥離することなく研
摩でき、基板に強固に接着していた。A glow discharge CV
A diamond thin film was vapor-phase grown by the method D under the conditions shown in Table 1. As a result, a 4 μm diamond thin film was deposited in a deposition time of 30 minutes. When this diamond thin film was polished using a skiff plate, it could be polished without peeling and was firmly adhered to the substrate.
一方、この圧入処理を行わなかった同じ基板を使用し
た場合には、同一条件で膜厚1.5μｍのダイヤモンド被
覆が得られたが、鋼製の針で引っ掻くと容易に剥離し
た。On the other hand, when the same substrate not subjected to this press-fitting treatment was used, a diamond coating having a film thickness of 1.5 μm was obtained under the same conditions, but it was easily peeled off when scratched with a steel needle.
実施例２…２枚のタングステン基板上に２〜４μｍの
ダイヤモンド粉末を沈降法にて全面に均一に堆積させ
た。このダイヤモンドが付着している面を向い合わせて
重ね、5t/cm2の圧力にて加圧し、ダイヤモンド粒をタン
グステン基板に圧入した。 Example 2 A 2 to 4 μm diamond powder was uniformly deposited on the entire surface of two tungsten substrates by a sedimentation method. The surfaces on which the diamonds were attached were placed face-to-face and pressed at a pressure of 5 t / cm 2 to press-fit the diamond grains into the tungsten substrate.
このようにして作成した基板を用いて、グロー放電CV
D法により第２表に示した条件でダイヤモンド薄膜を気
相成長させた。その結果、30分の成膜時間で６μｍのダ
イヤモンド薄膜が析出した。このダイヤモンド薄膜を実
施例１と同様にして、スカイフ盤を用いて研摩したが、
スカイフ研摩によって剥離することなく基板に強固に接
着していた。A glow discharge CV
A diamond thin film was vapor-phase grown by the method D under the conditions shown in Table 2. As a result, a diamond thin film of 6 μm was deposited in a deposition time of 30 minutes. This diamond thin film was polished using a skiff machine in the same manner as in Example 1, but
It was firmly adhered to the substrate without being peeled off by SKYF polishing.
一方、この圧入処理を行わなかった同じ基板を使用し
た場合には、同一条件で膜厚2.5μｍのダイヤモンド被
膜が得られたが、スカイフ盤を用いて研摩したところ容
易に剥離して終った。On the other hand, when the same substrate which was not subjected to the press-fitting treatment was used, a diamond film having a thickness of 2.5 μm was obtained under the same conditions, but the film was easily peeled off when polished using a skiff plate.
〔発明の効果〕 上述したように本発明では基板材質に関らず、基板と
強固に接着いたダイヤモンド薄膜を得ることができ、し
かも析出速度が向上した。特に実用性の高い超硬合金上
に強固に被覆できることは、薄膜ダイヤモンド被覆工具
の実用化に大きく貢献する。 [Effects of the Invention] As described above, in the present invention, a diamond thin film firmly bonded to a substrate can be obtained regardless of the substrate material, and the deposition rate has been improved. In particular, the fact that it can be firmly coated on a highly practical cemented carbide greatly contributes to the practical use of thin film diamond coated tools.
図面は本発明に係る薄膜ダイヤモンドを作成する時に用
いる基板へ、ダイヤモンド粉末を圧入する時の説明図で
ある。第１図は基板表面へダイヤモンド粉末を散布した
ところであり、第２図は超音波振動にてダイヤモンド粒
を基板に圧入していることろを示している。 １……基板、２……ダイヤモンド粉末、３……超音波ホ
ーンThe drawing is an explanatory view when a diamond powder is pressed into a substrate used for producing a thin film diamond according to the present invention. FIG. 1 shows a state where diamond powder is sprayed on the surface of the substrate, and FIG. 2 shows a state where diamond particles are pressed into the substrate by ultrasonic vibration. 1 ... substrate, 2 ... diamond powder, 3 ... ultrasonic horn
Claims (1)
より薄膜ダイヤモンドを被覆する方法において、あらか
じめ基板に微粒ダイヤモンドを圧入することを特徴とす
る薄膜ダイヤモンドの被覆方法。1. A method of coating a thin film diamond on a metal or cemented carbide substrate by a vapor phase synthesis method, wherein fine diamond particles are pressed into the substrate in advance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62218308A JP2590341B2 (en) | 1987-09-01 | 1987-09-01 | Coating method of thin film diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62218308A JP2590341B2 (en) | 1987-09-01 | 1987-09-01 | Coating method of thin film diamond |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6461397A JPS6461397A (en) | 1989-03-08 |
| JP2590341B2 true JP2590341B2 (en) | 1997-03-12 |
Family
ID=16717806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62218308A Expired - Fee Related JP2590341B2 (en) | 1987-09-01 | 1987-09-01 | Coating method of thin film diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2590341B2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4925701A (en) * | 1988-05-27 | 1990-05-15 | Xerox Corporation | Processes for the preparation of polycrystalline diamond films |
| US5183602A (en) * | 1989-09-18 | 1993-02-02 | Cornell Research Foundation, Inc. | Infra red diamond composites |
| JP2638275B2 (en) * | 1990-09-25 | 1997-08-06 | 日本電気株式会社 | Production method of vapor phase diamond thin film using diamond fine powder as seed crystal |
| JPH05221791A (en) * | 1991-12-18 | 1993-08-31 | Kobe Steel Ltd | Method for synthesizing diamond by combustion |
| US5827613A (en) * | 1992-09-04 | 1998-10-27 | Tdk Corporation | Articles having diamond-like protective film and method of manufacturing the same |
| JP4155872B2 (en) | 2003-05-26 | 2008-09-24 | 一正 大西 | Lapping machine manufacturing method |
| JP4705971B2 (en) * | 2008-05-12 | 2011-06-22 | 一正 大西 | Lapping machine manufacturing equipment |
| JP5209378B2 (en) * | 2008-06-06 | 2013-06-12 | 株式会社ディスコ | Wrap equipment |
| JP5769599B2 (en) * | 2011-11-23 | 2015-08-26 | オーエスジー株式会社 | Tool manufacturing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63285193A (en) * | 1987-05-19 | 1988-11-22 | Hitachi Cable Ltd | Production of substrate coated with diamond film |
-
1987
- 1987-09-01 JP JP62218308A patent/JP2590341B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6461397A (en) | 1989-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |