JP3448884B2 - Artificial diamond coating - Google Patents
Artificial diamond coatingInfo
- Publication number
- JP3448884B2 JP3448884B2 JP33456892A JP33456892A JP3448884B2 JP 3448884 B2 JP3448884 B2 JP 3448884B2 JP 33456892 A JP33456892 A JP 33456892A JP 33456892 A JP33456892 A JP 33456892A JP 3448884 B2 JP3448884 B2 JP 3448884B2
- Authority
- JP
- Japan
- Prior art keywords
- artificial diamond
- base material
- diamond coating
- coating film
- artificial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
- C23C16/0263—Irradiation with laser or particle beam
Description
【０００１】[0001]
【産業上の利用分野】本発明は、超硬質工具や各種の耐
摩耗性部品等に好適に利用できる人工ダイヤモンド被覆
材に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an artificial diamond coating material which can be suitably used for ultra-hard tools and various wear resistant parts.
【０００２】[0002]
【従来の技術】人工ダイヤモンドは極めて硬度が高いた
めに、軸受鋼等の硬質材を加工するための超硬質工具と
して、あるいは高度の耐摩耗性を要求される機械の部品
等として利用される。このような場合に使用する人工ダ
イヤモンドとしては、例えば物理的気相成長法（Physic
al Vapor Deposition:以下、単に「ＰＶＤ法」とす
る）、化学的気相成長法（Chemical Vapor Deposition:
以下、単に「ＣＶＤ法」とする）により形成された薄膜
状のものを使用することが研究されている。この人工ダ
イヤモンド膜の製造法としては、前記ＰＶＤ法やＣＶＤ
法を含め、その他例えば特開昭５８−９１１００，特開
昭５８−１１０４９４，特開昭５８−１３５１１７，特
開昭６１−１５１０９７，特開昭６３−２８２２００，
特開昭６４−５１３９６等に記載された各種方法が知ら
れている。2. Description of the Related Art Since artificial diamond has an extremely high hardness, it is used as an ultra-hard tool for processing hard materials such as bearing steel, or as a machine part requiring a high degree of wear resistance. As an artificial diamond used in such a case, for example, physical vapor deposition method (Physic
al Vapor Deposition: Hereinafter, simply referred to as “PVD method”), chemical vapor deposition method (Chemical Vapor Deposition:
Hereinafter, the use of a thin film formed by simply "CVD method" has been studied. The artificial diamond film is manufactured by the PVD method or the CVD method described above.
And other methods such as JP-A-58-91100, JP-A-58-110494, JP-A-58-135117, JP-A-61-151097, and JP-A-63-28200.
Various methods described in JP-A-64-51396 and the like are known.
【０００３】これら従来知られた製造方法により人工ダ
イヤモンド膜を製造する場合、ダイヤモンドを析出させ
るための基材として、ケイ素（Ｓｉ），タングステン
（Ｗ），モリブデン（Ｍｏ）等の金属、酸化アルミニウ
ム（Ａｌ2 Ｏ3 ），炭化ケイ素（ＳｉＣ），窒化ケイ素
（Ｓｉ3 Ｎ4 ）等のセラミックス、あるいはダイヤモン
ド等が使用される。これらの基材をＣＶＤ法等を実施す
るための人工ダイヤモンド膜製造装置内にセットしてそ
の装置を運転すれば、上記基材の表面に人工ダイヤモン
ドの被覆膜が形成され、この人工ダイヤモンド被覆膜形
成部分を切削部とする超硬質工具、あるいはこの人工ダ
イヤモンド被覆膜形成部分を摩擦面とする耐摩耗性機械
部品が得られる。When an artificial diamond film is manufactured by these conventionally known manufacturing methods, a metal such as silicon (Si), tungsten (W), molybdenum (Mo), aluminum oxide ( Ceramics such as Al 2 O 3 ), silicon carbide (SiC), and silicon nitride (Si 3 N 4 ), or diamond are used. When these base materials are set in an artificial diamond film manufacturing apparatus for carrying out a CVD method or the like and the apparatus is operated, a coating film of artificial diamond is formed on the surface of the base material, and the artificial diamond coating is formed. It is possible to obtain a super-hard tool having a coating film forming portion as a cutting portion, or a wear resistant mechanical part having an artificial diamond coating film forming portion as a friction surface.
【０００４】[0004]
【発明が解決しようとする課題】例えば、従来のＣＶＤ
法により基材表面に人工ダイヤモンドの被覆膜を形成す
る場合、基材がダイヤモンドであれば、人工ダイヤモン
ドがエピタキシャル結晶成長により基材表面に形成され
る。そのため基材と人工ダイヤモンド被覆膜との結合強
度が極めて大きくなり十分な実用性を有する超硬質工具
や耐摩耗性機械部品等を得ることができるが、反面、製
作費が極めて高くなるという問題点があった。SUMMARY OF THE INVENTION For example, conventional CVD
When the coating film of artificial diamond is formed on the surface of the base material by the method, if the base material is diamond, the artificial diamond is formed on the surface of the base material by epitaxial crystal growth. Therefore, the bonding strength between the base material and the artificial diamond coating becomes extremely large, and it is possible to obtain a super-hard tool and wear-resistant mechanical parts having sufficient practicality, but on the other hand, the problem that the manufacturing cost becomes extremely high There was a point.
【０００５】一方、基材が金属やセラミックスの場合に
は、形成された人工ダイヤモンド被覆膜と基材との結合
強度が小さく（すなわち密着性が弱く）、超硬質工具や
耐摩耗性機械部品等として使用した場合に人工ダイヤモ
ンド被覆膜が簡単に剥離してしまい、そのままでは殆ど
実用にはならないという問題点があった。従来、このよ
うな事情を考慮しつつ、人工ダイヤモンド被覆膜を基材
上に密着性良く製造する方法が多数開示されている。代
表的なものとしては、基材に関するもの、基材の表
面処理に関するもの、中間層に関するもの、膜の構
造に関するもの等が挙げられる。On the other hand, when the base material is metal or ceramics, the bonding strength between the formed artificial diamond coating film and the base material is small (that is, the adhesion is weak), and a super-hard tool or wear-resistant mechanical part is used. When it is used as, for example, the artificial diamond coating film is easily peeled off, and there is a problem that it cannot be practically used as it is. Heretofore, many methods for producing an artificial diamond coating film on a substrate with good adhesion have been disclosed in consideration of such circumstances. Typical examples include those relating to the substrate, those relating to the surface treatment of the substrate, those relating to the intermediate layer, and those relating to the structure of the film.
【０００６】の基材に関しては、例えば特開平２−２
７５７８８があり、炭化タングステンとケイ素またはホ
ウ素の炭化物または窒化物の少なくとも一種とから得ら
れる焼結体の表面に、気相合成法でダイヤモンド膜を形
成したダイヤモンド被覆材が提案されている。の基材
の表面処理に関しては、例えば特公昭６３−２０９１１
があり、これには、サーメット部材の表面に人工ダイヤ
モンド被覆膜を析出形成せしめるに際し、前処理として
サーメット部材の表面にエッチング処理を施し表面の結
合相を除去して分散相の表面面積率を増大させ密着性を
向上させることが示されている。この前処理は超硬合金
基材の結合相上にはダイヤモンドが生成しないためにな
されるもので、サーメット部材の表面を分散相主体とす
ることにより、ダイヤモンドの初期析出結晶核発生密度
の向上、接着面積の増大がなされ、基材とダイヤモンド
との密着性が改善される。の中間層に関するものとし
ては、例えば特公昭６３−１５３４７があり、サーメッ
ト部材の表面に、Ｗ、Ｍｏ、及びＮｂ、並びにその合金
のうちのいずれかからなる平均層厚0.05〜1.2 μｍの蒸
着層を中間層として形成し、その中間層の上に人工ダイ
ヤモンド析出生成法で形成した平均厚さ１〜１０μｍの
人工ダイヤモンド被膜を形成して密着を強固にしてい
る。また、の膜の構造に関するものとしては、例えば
特開昭６１−２７０３７３において、超硬合金基材表面
に厚さを0.1 〜1.0 μｍの範囲に限定した気相合成のダ
イヤモンド被覆膜を形成することにより実用上十分な密
着強度の確保が図られている。With respect to the base material, for example, Japanese Patent Application Laid-Open No. 2-2
75788, there is proposed a diamond coating material in which a diamond film is formed on the surface of a sintered body obtained from tungsten carbide and at least one of carbide or nitride of silicon or boron by a vapor phase synthesis method. Regarding the surface treatment of the base material, for example, Japanese Patent Publication No. 63-20911.
There is, in forming the artificial diamond coating film on the surface of the cermet member, the surface area ratio of the dispersed phase by removing the binder phase on the surface by performing etching treatment on the surface of the cermet member as a pretreatment. It has been shown to increase and improve adhesion. This pretreatment is performed so that diamond is not formed on the binder phase of the cemented carbide base material, and by making the surface of the cermet member the dispersed phase as a main component, improvement of initial precipitation crystal nucleus generation density of diamond, The adhesion area is increased, and the adhesion between the base material and the diamond is improved. Japanese Patent Publication No. 63-15347, which relates to the intermediate layer of No. 3, in which a vapor-deposited layer made of any one of W, Mo, and Nb and its alloys and having an average layer thickness of 0.05 to 1.2 μm is formed on the surface of the cermet member. Is formed as an intermediate layer, and an artificial diamond coating having an average thickness of 1 to 10 μm formed by the artificial diamond precipitation forming method is formed on the intermediate layer to strengthen the adhesion. Regarding the structure of the film, for example, in JP-A-61-270373, a diamond coating film of vapor phase synthesis is formed on the surface of a cemented carbide base material, the thickness of which is limited to the range of 0.1 to 1.0 μm. As a result, practically sufficient adhesion strength is ensured.
【０００７】しかしながら、こうして得られた超硬合金
の人工ダイヤモンド被覆材を実際に切削工具や機械部品
として長期間使用すると、基材の破壊が起こり人工ダイ
ヤモンド被膜が剥離してしまうという問題が発生した。
これは、人工ダイヤモンド被覆膜がもつ大きな内部応力
や、ダイヤモンド自身が他の物質と化合物をつくり難い
ことによる基材との化学的結合力の不足などが原因とな
り、外部応力を加えるとクラックが導入され易く、これ
がダイヤモンドの粒界を伝搬して破壊に到り易いと考え
ることができる。However, when the cemented carbide artificial diamond coating material thus obtained is actually used for a long time as a cutting tool or a machine part, the base material is broken and the artificial diamond coating film is peeled off. .
This is due to the large internal stress of the artificial diamond coating film and the lack of chemical bonding force with the base material due to the fact that diamond itself does not easily form compounds with other substances. It can be considered that they are easily introduced, and that they are easily propagated through the grain boundaries of diamond and lead to destruction.
【０００８】そこで、本発明者は、炭化タングステン
（ＷＣ）を含む超硬合金を基材とし、その表面にエッチ
ング処理を施して表面の結合相を除去したものに形成さ
れた人工ダイヤモンド被覆膜の剥離のメカニズムを調べ
たところ、剥離した人工ダイヤモンド被膜の裏面（基材
側）には炭化タングステン（ＷＣ）粒子が一粒子層分観
察された。このことから、基材と膜との界面で剥離が起
こったのではなく、基材自体が破壊したことは明白であ
る。こうして、結合相を除去し過ぎたためＷＣ粒子の保
持力が低下し、熱や応力が繰り返しかかることでＷＣ粒
子層にクラックが生じて、それが広がり破壊が起きると
の知見を得た。すなわち、基材に結合相があるとダイヤ
モンド被覆膜の生成が妨げられて密着力が弱くなるが、
かといって結合相を除去し過ぎると基材のＷＣ粒子の保
持力が低下し基材にクラックが広がって人工ダイヤモン
ド被覆膜の剥離が生じることとなる。この知見に基づい
て、本発明者は除去する結合相の最適化をはかるべく実
験を重ねた結果、従来のエッチング等の化学的前処理手
段で単に結合相を除去するのみでは、ダイヤモンドと基
材との密着力を確保したままでＷＣ粒子の保持力を低下
させずに維持することは非常に困難であるとの結論に到
達した。Therefore, the present inventor has made an artificial diamond coating film formed by using a cemented carbide containing tungsten carbide (WC) as a base material and subjecting the surface to etching treatment to remove the binder phase on the surface. When the mechanism of peeling was examined, one layer of tungsten carbide (WC) particles was observed on the back surface (substrate side) of the peeled artificial diamond film. From this, it is clear that the base material itself broke rather than peeling at the interface between the base material and the film. In this way, it was found that the cohesive phase was removed too much, so that the holding power of the WC particles was lowered and the WC particle layer was cracked due to repeated application of heat and stress, which spread and fractured. That is, if the base material has a binder phase, the formation of the diamond coating film is hindered and the adhesion becomes weak,
On the other hand, if the binder phase is removed too much, the holding power of the WC particles on the base material will decrease, and the cracks will spread on the base material, resulting in peeling of the artificial diamond coating film. Based on this finding, the present inventor has conducted experiments to optimize the binder phase to be removed, and as a result, simply removing the binder phase by a conventional chemical pretreatment means such as etching is not enough to remove the diamond and the substrate. It has been concluded that it is very difficult to maintain the adhesiveness with the WC particles without lowering the retention of the WC particles.
【０００９】本発明は、上記従来の人工ダイヤモンド被
覆材の問題点を解決するものであり、長期間使用しても
人工ダイヤモンド被覆膜が剥離しにくい安価な人工ダイ
ヤモンド被覆材を提供することを目的としている。The present invention solves the above-mentioned problems of the conventional artificial diamond coating materials, and provides an inexpensive artificial diamond coating material in which the artificial diamond coating film does not easily peel off even after long-term use. Has an aim.
【００１０】[0010]
【課題を解決するための手段】上記の目的を達成するた
め、本発明に係る請求項１の人工ダイヤモンド被覆材
は、ダイヤモンドよりも熱膨張係数の大きな基材の表面
に気相合成法により人工ダイヤモンド被覆膜を形成した
人工ダイヤモンド被覆材において、前記基材の表面のう
ち少なくとも前記人工ダイヤモンド被覆膜を形成する部
分に、微細な溝及び穴の少なくとも一方からなる凹部を
形成する第１工程と、前記基材の結合相のうち少なくと
も前記凹部の表面の結合相を腐食により除去する第２工
程と、前記基材の表面及び前記凹部の表面のうち少なく
とも一方に、人工ダイヤモンド結晶成長の基となる核を
増やす微細キズを形成する第３工程と、前記基材の表面
及び前記凹部の表面のうち少なくとも前記凹部の表面
に、人工ダイヤモンド被覆膜を形成する第４工程と、前
記第４工程で形成された人工ダイヤモンド被覆膜に表面
研磨を施して平坦な仕上面を設ける第５工程と、を有す
る製造方法により得られるとともに、前記基材の表面に
形成された人工ダイヤモンド被覆膜は前記表面研磨によ
り除去されて、前記凹部内のみに人工ダイヤモンド被覆
膜が形成されており、前記基材の表面と前記凹部内の人
工ダイヤモンド被覆膜とが平坦な同一平面をなしている
ことを特徴とする。 また、本発明に係る請求項２の人工
ダイヤモンド被覆材は、ダイヤモンドよりも熱膨張係数
の大きな基材の表面に気相合成法により人工ダイヤモン
ド被覆膜を形成した人工ダイヤモンド被覆材において、
前記基材の表面のうち少なくとも前記人工ダイヤモンド
被覆膜を形成する部分に、微細な溝及び穴の少なくとも
一方からなる凹部を形成する第１工程と、前記基材の表
面及び前記凹部の表面のうち少なくとも一方に、人工ダ
イヤモンド結晶成長の基となる核を増やす微細キズを形
成する第２工程と、前記基材の表面及び前記凹部の表面
に前記人工ダイヤモンド被覆膜を形成する第３工程と、
前記第３工程で形成された人工ダイヤモンド被覆膜に表
面研磨を施すことにより、前記基材の表面に形成された
人工ダイヤモンド被覆膜を除去するとともに、前記凹部
内のみに人工ダイヤモンド被覆膜が形成されているよう
にして、前記基材の表面と前記凹部内の人工ダイヤモン
ド被覆膜とを平坦な同一平面に仕上げる第４工程と、を
有する製造方法により得られるこ とを特徴とする。 In order to achieve the above object, the artificial diamond coating material according to claim 1 of the present invention is an artificial diamond coating material formed on a surface of a base material having a thermal expansion coefficient larger than that of diamond by a vapor phase synthesis method. In an artificial diamond coating material having a diamond coating film formed thereon, a first step of forming a concave portion including at least one of fine grooves and holes in at least a portion of the surface of the base material where the artificial diamond coating film is formed. And a second step of removing at least one of the binder phases of the base material on the surface of the recess by corrosion, and on at least one of the surface of the base material and the surface of the recess, a group of artificial diamond crystal growth A third step of forming fine scratches that increase the number of nuclei that will become nuclei, and an artificial diamond on at least the surface of the recess of the surface of the substrate and the surface of the recess A fourth step of forming a Kutsugaemaku, before
The surface of the artificial diamond coating film formed in the fourth step
A fifth step of polishing to provide a flat finished surface
It is obtained by the manufacturing method according to
The formed artificial diamond coating film was formed by the surface polishing.
The artificial diamond coating is removed only in the recesses.
A film is formed on the surface of the base material and the person inside the recess.
The same surface as the engineered diamond coating is flat
It is characterized by Further, the artificial body according to claim 2 of the present invention
Diamond coating material has a higher coefficient of thermal expansion than diamond
Artificial diamond on the surface of a large substrate by vapor phase synthesis
In the artificial diamond coating material with the coating film formed,
At least the artificial diamond on the surface of the substrate
At least fine grooves and holes are formed in the portion where the coating film is formed.
A first step of forming a concave portion composed of one side, and a surface of the base material.
On at least one of the surface and the surface of the recess.
Shape fine scratches that increase the nucleus that is the basis of eardrum crystal growth
Second step of forming, surface of the base material and surface of the recess
A third step of forming the artificial diamond coating film on
The artificial diamond coating film formed in the third step is exposed.
Formed on the surface of the base material by surface polishing
The artificial diamond coating film is removed and
It seems that the artificial diamond coating film is formed only inside
The artificial diamond on the surface of the base material and in the recess
The fourth step of finishing the coating film with the flat surface
Characterized that you obtained by the production method having.
【００１１】[0011]
【作用】本発明の人工ダイヤモンド被覆材にあっては、
基材の表面に形成した微細な溝や穴に気相合成の人工ダ
イヤモンドが充填される。しかして、熱応力や機械的応
力がかかって基材の炭化タングステン粒子層にクラック
が発生すると、クラックは基材とダイヤモンド被覆膜と
の界面に平行に走り、独立したそれらの溝や穴に達する
ともはや界面に平行に進行できず伝搬が停止する。すな
わち、基材表面の独立した溝や穴がクラックの伝搬を防
止することができて基材と人工ダイヤモンド被覆膜との
結合が阻害されず、充分に強固な密着性が確保できる。In the artificial diamond coating material of the present invention,
The fine grooves and holes formed on the surface of the base material are filled with vapor-phase synthetic artificial diamond. Then, when a crack is generated in the tungsten carbide particle layer of the base material due to thermal stress or mechanical stress, the crack runs parallel to the interface between the base material and the diamond coating film, and the independent grooves and holes are formed. When it reaches, it can no longer proceed parallel to the interface and the propagation stops. That is, independent grooves or holes on the surface of the base material can prevent the propagation of cracks, and the bond between the base material and the artificial diamond coating film is not hindered, and sufficiently strong adhesion can be secured.
【００１２】また、基材とダイヤモンドとの線膨張率の
差により（ダイヤモンドの方が小さい）基材表面の溝や
穴などの凹部に形成された人工ダイヤモンドが室温で圧
縮力を受けて、これら凹部の部分で充分に強固に基材に
保持されるから剥離しにくくなる。前記二つの作用が相
まって、基材と被覆膜との界面においても基材の粒子層
においても、剥離の起こりにくい強固な被覆膜が得られ
る。Further, due to the difference in linear expansion coefficient between the base material and the diamond (diamond is smaller), the artificial diamond formed in the recesses such as grooves and holes on the surface of the base material receives compressive force at room temperature, and these Since the base material is firmly held in the recessed portion, peeling is difficult. The combination of the above two effects makes it possible to obtain a strong coating film that is unlikely to peel off at the interface between the substrate and the coating film or in the particle layer of the substrate.
【００１３】また、前記二つの作用のうちの後者、すな
わち凹部における基材と人工ダイヤモンドの熱膨張差を
利用するものについてのみを使用することもできる。す
なわち、本発明は基材表面に多数の微細な溝や穴等の凹
部を形成し、これら凹部のみに人工ダイヤモンドを充填
するような用途にも使用することができる。本発明の結
合相の除去と溝や穴を形成する手順とは、どちらが先で
も良い。Further, only the latter of the above two actions, that is, the one utilizing the difference in thermal expansion between the base material and the artificial diamond in the recess can be used. That is, the present invention can be used for applications such as forming a large number of fine recesses such as grooves and holes on the surface of a substrate and filling only these recesses with artificial diamond. Either of the procedure of removing the binder phase and the step of forming the groove or hole of the present invention may be performed first.
【００１４】本発明の人工ダイヤモンド被覆材に用いら
れる基材は、ダイヤモンドを析出し且つダイヤモンドよ
り熱膨張係数の大きな超硬合金材，金属，セラミックス
等が好適に使用できる。前記超硬合金材としては、具体
的には周期律表第IVa ,Va ,VIa族に属する金属の炭化物
のうち少なくとも一種類以上を含み、これらの炭化物粉
末を鉄（Ｆｅ），コバルト（Ｃｏ），ニッケル（Ｎｉ）
などの結合相を用いて焼結したものである。ダイヤモン
ドの熱膨張係数は約１×１０-6／Ｋであるのに対して、
前記超硬合金材を構成する金属やセラミックスの熱膨張
係数は３〜３０×１０-6／Ｋとより大きい値であり、か
つダイヤモンドの被覆処理は約３００〜１０００℃の高
温でなされるので、基材の溝や穴などの凹部に形成され
た人工ダイヤモンド被覆膜には冷えると圧縮力が導入さ
れ、その結果溝や穴などの凹部において基材に強固に保
持されることになる。前記金属としては、例えば黄銅等
が挙げられる。As the base material used for the artificial diamond coating material of the present invention, a cemented carbide material, a metal, a ceramic or the like which deposits diamond and has a thermal expansion coefficient larger than that of diamond can be preferably used. The cemented carbide material specifically contains at least one kind of carbides of metals belonging to Groups IVa, Va, and VIa of the Periodic Table, and these carbide powders are iron (Fe) and cobalt (Co). , Nickel (Ni)
Sintered using a binder phase such as. The coefficient of thermal expansion of diamond is about 1 × 10 −6 / K, while
Since the coefficient of thermal expansion of the metal or ceramics constituting the cemented carbide material is as large as 3 to 30 × 10 −6 / K, and the diamond coating is performed at a high temperature of about 300 to 1000 ° C., When the artificial diamond coating film formed in the recesses such as grooves and holes of the base material is cooled, compressive force is introduced, and as a result, the artificial diamond coating film is firmly held in the base material in the recesses such as grooves and holes. Examples of the metal include brass.
【００１５】本発明の基材の表面に溝や穴を形成する方
法としては、例えば、気相や液相中でのエッチングやレ
ーザー，電子，イオン等の各種ビーム加工や放電加工等
が好適に使用できる。本発明における基材表面への人工
ダイヤモンドの気相合成には、公知の熱フィラメントＣ
ＶＤ法，マイクロ波プラズマＣＶＤ法，高周波プラズマ
ＣＶＤ法，燃焼炎法のいずれも好適に使用できる。As a method for forming grooves or holes on the surface of the base material of the present invention, for example, etching in a gas phase or a liquid phase, various beam machining of laser, electron, ion, etc., and electric discharge machining are suitable. Can be used. For the vapor phase synthesis of artificial diamond on the surface of the substrate in the present invention, the known hot filament C is used.
Any of the VD method, the microwave plasma CVD method, the high frequency plasma CVD method, and the combustion flame method can be preferably used.
【００１６】しかして、本発明の人工ダイヤモンド被覆
膜は、基材の凹部（溝や穴）を含む所定の表面全部に形
成しても良く、或いは基材の凹部にのみ形成しても良
い。However, the artificial diamond coating film of the present invention may be formed on the entire predetermined surface of the base material including the recesses (grooves or holes), or may be formed only on the recesses of the base material. .
【００１７】[0017]
【実施例】以下、本発明の実施例を図面を参照して説明
する。
（第１実施例）図１は、１０mm×８mm×厚さ3 mmの超硬
合金（ＷＣ＋６％Ｃｏ）からなる基材１の斜視図で、表
面１ａから裏面に貫通する取付け用ねじ孔１ｂを有して
いる。この基材１は、図２に示すようなＶブロック２に
ねじＢで取付け耐摩耗部品として使用されるものであ
る。この基材１を用いた人工ダイヤモンド被覆材の製造
工程は次の通りである。Embodiments of the present invention will be described below with reference to the drawings. (First Embodiment) FIG. 1 is a perspective view of a base material 1 made of a cemented carbide (WC + 6% Co) having a size of 10 mm × 8 mm × thickness 3 mm, in which a mounting screw hole 1b penetrating from the front surface 1a to the rear surface is formed. Have This base material 1 is attached to a V block 2 as shown in FIG. 2 with a screw B and used as a wear resistant component. The manufacturing process of the artificial diamond coating material using this substrate 1 is as follows.
【００１８】まず第１工程で、基材１の表面に、幅１０
μｍ，深さ１０μｍ，溝間隔４０μｍの溝３（図３参
照）を次の加工条件で形成した。
加工装置：ＫｒＦエキシマレーザー加工機
波長２４８ｎｍ、最大出力５０Ｗ、パルス幅１７ｎｓｅ
ｃ、
周波数２００Ｈｚ、加工速度４．８mm／ｓ、スキャン回
数１回／溝
第２工程で、基材１を硝酸２０％水溶液に５時間浸漬
し、基材表面の結合相であるコバルトを除去し、その後
洗浄した。First, in the first step, the width 10 is formed on the surface of the substrate 1.
Grooves 3 (see FIG. 3) having a depth of 10 μm and a groove spacing of 40 μm were formed under the following processing conditions. Processing equipment: KrF excimer laser processing machine wavelength 248nm, maximum output 50W, pulse width 17nse
c, frequency 200 Hz, processing speed 4.8 mm / s, scan number 1 time / groove In the second step, the base material 1 was immersed in a 20% aqueous solution of nitric acid for 5 hours to remove cobalt as a binder phase on the surface of the base material. , Then washed.
【００１９】第３工程で、基材１を＃２０００のダイヤ
モンドパウダーを分散させたアルコール溶液中に浸漬
し、超音波を１分間付加して基材表面１ａに微細なキズ
を付けた。これは、気相合成されるダイヤモンド結晶の
核発生密度を増加せしめるためである。その後、基材１
を上記アルコール溶液から取り出し、洗浄した。第４工
程で、基材１の表面に人工ダイヤモンド被覆膜を気相合
成法で合成した。その合成条件は次の通りである。In the third step, the base material 1 was dipped in an alcohol solution in which # 2000 diamond powder was dispersed, and ultrasonic waves were applied for 1 minute to form fine scratches on the surface 1a of the base material. This is to increase the nucleation density of diamond crystals that are vapor-phase synthesized. After that, the base material 1
Was removed from the alcohol solution and washed. In the fourth step, an artificial diamond coating film was synthesized on the surface of the base material 1 by a vapor phase synthesis method. The synthesis conditions are as follows.
【００２０】成膜装置：マイクロ波プラズマＣＶＤ装置
マイクロ波電力：４ｋｗ
反応ガス：ＣＯ１０ｃｃ／ｍｉｎ＋Ｈ2 ９０ｃｃ／ｍｉ
ｎ
反応圧力：０．１Ｔｏｒｒ
基材温度：約７００℃
合成時間：約２０時間
かくして、基材１の表面１ａ上に、図４に示すように溝
３に応じた箇所に溝４ａを有する人工ダイヤモンド被覆
膜４が形成された。Film forming apparatus: Microwave plasma CVD apparatus Microwave power: 4 kw Reactive gas: CO 10 cc / min + H 2 90 cc / mi
n Reaction pressure: 0.1 Torr Substrate temperature: Approx. 700 ° C. Synthesis time: Approximately 20 hours Thus, an artificial diamond having grooves 4a on the surface 1a of the substrate 1 as shown in FIG. The coating film 4 was formed.
【００２１】第５工程で、この人工ダイヤモンド被覆膜
４に表面研磨を施して、溝４ａがなくなり、平らになる
ように膜を除去し、図５に示すような厚さ約１０μｍの
人工ダイヤモンド被覆膜４で超硬合金（ＷＣ＋６％Ｃ
ｏ）からなる基材１の表面を被覆してなる人工ダイヤモ
ンド被覆材が得られた。
（第２実施例）この実施例の人工ダイヤモンド被覆材
は、図６に示すような一辺１２．７mm，厚さ３mmの超硬
合金（ＴｉＣＮ＋２６％Ｎｉ）からなる基材１１の表面
のコーナー部に、人工ダイヤモンド被覆膜を形成してな
る超硬合金切削用スローアウエイチップである。In the fifth step, the artificial diamond coating film 4 is surface-polished to remove the film so that the grooves 4a disappear and become flat, and the artificial diamond film having a thickness of about 10 μm as shown in FIG. Cemented carbide (WC + 6% C) with coating film 4
An artificial diamond coating material obtained by coating the surface of the base material 1 made of o) was obtained. (Second Embodiment) The artificial diamond coating material of this embodiment is applied to the corner portion of the surface of the base material 11 made of cemented carbide (TiCN + 26% Ni) having a side of 12.7 mm and a thickness of 3 mm as shown in FIG. A throwaway tip for cutting cemented carbide formed by forming an artificial diamond coating film.
【００２２】第１工程で、基材１１の表面の所定のコー
ナー部の約２mm四方の領域に、直径約２０μｍ，深さ約
５μｍの穴１２を０．２mm間隔で多数個（図８参照）、
次の加工条件で形成した。
加工装置：カウフマン型イオンビーム装置
気体源Ａｒ、出力１．０ｋｅＶ（０．５ｍＡ／ｃｍ2 ）
反応圧力：１×１０-2Ｔｏｒｒ（初期排気 １×１０-4
Ｔｏｒｒ以下）
反応時間：７時間
第２工程で、基材１１を塩化第二鉄溶液に１時間浸漬
し、基材表面の結合相であるニッケルを除去し、その後
洗浄した。In the first step, a large number of holes 12 having a diameter of about 20 μm and a depth of about 5 μm are formed at intervals of 0.2 mm in a region of about 2 mm square at a predetermined corner of the surface of the base material 11 (see FIG. 8). ,
It was formed under the following processing conditions. Processing device: Kaufman type ion beam device Gas source Ar, output 1.0 keV (0.5 mA / cm 2 ) Reaction pressure: 1 × 10 -2 Torr (initial exhaustion 1 × 10 -4
Torr or less) Reaction time: 7 hours In the second step, the base material 11 was immersed in a ferric chloride solution for 1 hour to remove nickel as a binder phase on the surface of the base material, and then washed.
【００２３】第３工程は、上記第１実施例と同様であ
る。第４工程で、基材１１の表面に人工ダイヤモンド被
覆膜を気相合成法で合成した。その合成条件は次の通り
である。
成膜装置：熱フィラメントＣＶＤ装置
タングステンフィラメントと基材表面間の距離 ５mm
反応ガス：ＣＨ4 ３ｃｃ／ｍｉｎ＋Ｈ2 ９７ｃｃ／ｍｉ
ｎ
反応圧力：１００Ｔｏｒｒ
基材温度：約８５０℃、フィラメント放射のみ、冷却な
し
合成時間：約１０時間
かくして、超硬合金からなる基材１１の表面の所定コー
ナー部に、図８に示すように穴１２に対応した凹部１３
ａを有する厚さ約１５μｍの人工ダイヤモンド被覆膜１
３が形成された人工ダイヤモンド被覆材としてのスロー
アウエイチップが得られた。
（第３実施例）この実施例の人工ダイヤモンド被覆材
は、耐摩耗性摺動部材である。図９に示すように、超硬
合金（ＷＣ＋６％Ｃｏ）からなる基材２１の表面に第１
実施例と同様の溝３を加工し、その溝３の中にのみ人工
ダイヤモンド被覆膜２２を形成したものである。The third step is the same as in the first embodiment. In the fourth step, an artificial diamond coating film was synthesized on the surface of the base material 11 by a vapor phase synthesis method. The synthesis conditions are as follows. Film forming device: hot filament CVD device Distance between tungsten filament and substrate surface 5 mm Reaction gas: CH 4 3 cc / min + H 2 97 cc / mi
n Reaction pressure: 100 Torr Base material temperature: about 850 ° C., filament radiation only, no cooling Synthesis time: about 10 hours Thus, a hole is formed at a predetermined corner of the surface of the base material 11 made of cemented carbide as shown in FIG. Recess 13 corresponding to 12
Artificial diamond coating film 1 having a thickness of about 15 μm
A throwaway tip as an artificial diamond coating material on which 3 was formed was obtained. (Third Embodiment) The artificial diamond coating material of this embodiment is a wear resistant sliding member. As shown in FIG. 9, a first layer is formed on the surface of the base material 21 made of cemented carbide (WC + 6% Co).
The groove 3 similar to that of the embodiment is processed, and the artificial diamond coating film 22 is formed only in the groove 3.
【００２４】まず第１工程で、第１実施例と同一の加工
条件により基材２１の表面に溝３を形成した。第２工程
では、溝３の部分を除いて基材２１の表面に耐酸性レジ
ストにてマスキングを施し、続いてその基材２１を硝酸
２０％水溶液に浸漬して溝３の表面のコバルトからなる
結合相を除去し、その後洗浄した。溝３以外の基材表面
は耐酸性レジストで保護されており、結合相は除去され
ない。First, in the first step, the groove 3 was formed on the surface of the base material 21 under the same processing conditions as in the first embodiment. In the second step, the surface of the base material 21 except for the groove 3 is masked with an acid resistant resist, and then the base material 21 is immersed in a 20% nitric acid aqueous solution to form cobalt on the surface of the groove 3. The bonded phase was removed and then washed. The surface of the base material other than the groove 3 is protected by an acid resistant resist, and the binder phase is not removed.
【００２５】第３工程で、気相合成されるダイヤモンド
結晶の核発生密度を増加せしめるために、第１実施例と
同じく、基材２１を＃２０００のダイヤモンドパウダー
を分散させたアルコール溶液中に浸漬し、超音波を１分
間付加して基材表面に微細なキズを付けた。その後、基
材２１を上記アルコール溶液から取り出し、洗浄した。In the third step, in order to increase the nucleation density of the diamond crystals vapor-phase synthesized, the base material 21 is immersed in an alcohol solution in which # 2000 diamond powder is dispersed, as in the first embodiment. Then, ultrasonic waves were applied for 1 minute to make fine scratches on the surface of the base material. Then, the base material 21 was taken out from the alcohol solution and washed.
【００２６】第４工程で、基材２１の表面に人工ダイヤ
モンド被覆膜を気相合成法で合成した。その合成条件は
次の通りである。
成膜装置：マイクロ波プラズマＣＶＤ装置
マイクロ波電力 ４ｋＷ
反応ガス：ＣＯ１０ｃｃ／ｍｉｎ＋Ｈ2 ９０ｃｃ／ｍｉ
ｎ
反応圧力：０．１Ｔｏｒｒ
基材温度：約７００℃
合成時間：約１０時間
かくして、基材２１の表面上に、図１０に示すように溝
３に対応した箇所に溝２２ａを有する人工ダイヤモンド
被覆膜２２が形成された。In the fourth step, an artificial diamond coating film was synthesized on the surface of the base material 21 by the vapor phase synthesis method. The synthesis conditions are as follows. Film forming device: microwave plasma CVD device microwave power 4 kW Reactive gas: CO 10 cc / min + H 2 90 cc / mi
n Reaction pressure: 0.1 Torr Base material temperature: Approx. 700 ° C. Synthesis time: Approximately 10 hours Thus, on the surface of the base material 21, as shown in FIG. The covering film 22 was formed.
【００２７】第５工程で、この人工ダイヤモンド被覆膜
２２に表面研磨を施して、溝２２ａと共に基材面上の人
工ダイヤモンド被覆膜２２を除去した。これにより、図
１１に示すように、超硬合金（ＷＣ＋６％Ｃｏ）からな
る基材２１の表面の溝３の部分にのみ人工ダイヤモンド
被覆膜２２を有する耐摩耗性摺動部材が得られた。
（第４実施例）この実施例の人工ダイヤモンド被覆材
は、研磨板である。図１２に示すような円板状の黄銅か
らなる基材３１の表面に所定のパターンで多数の穴３２
を加工し、その穴３２の中にのみ人工ダイヤモンド被覆
膜３３を形成したものである。In the fifth step, the artificial diamond coating film 22 was surface-polished to remove the groove 22a and the artificial diamond coating film 22 on the substrate surface. As a result, as shown in FIG. 11, a wear-resistant sliding member having the artificial diamond coating film 22 only on the groove 3 on the surface of the base material 21 made of cemented carbide (WC + 6% Co) was obtained. . (Fourth Embodiment) The artificial diamond coating material of this embodiment is a polishing plate. As shown in FIG. 12, a large number of holes 32 are formed in a predetermined pattern on the surface of a base material 31 made of a brass plate.
And the artificial diamond coating film 33 is formed only in the hole 32.
【００２８】第１工程で、基材３１の表面に穴３２を形
成した。すなわち、基材３１の表面に耐酸性レジストに
よりマスクパターンを形成した後、その基材３１を塩化
第二鉄溶液に１時間浸漬し、その後洗浄して、直径約２
０μｍ、深さ約５μｍの穴３２を等間隔に形成した。第
２工程で、気相合成されるダイヤモンド結晶の核発生密
度を増加せしめるために、基材３１を＃２０００のダイ
ヤモンドパウダーを分散させたアルコール溶液中に浸漬
し、超音波を１分間付加して基材表面に微細なキズを付
けた。その後、基材２１を上記アルコール溶液から取り
出し、洗浄した。In the first step, holes 32 were formed on the surface of the base material 31. That is, after forming a mask pattern on the surface of the base material 31 with an acid resistant resist, the base material 31 is dipped in a ferric chloride solution for 1 hour and then washed to have a diameter of about 2
Holes 32 having a depth of 0 μm and a depth of about 5 μm were formed at equal intervals. In the second step, in order to increase the nucleus generation density of the diamond crystals to be vapor-phase synthesized, the base material 31 is dipped in an alcohol solution in which # 2000 diamond powder is dispersed, and ultrasonic waves are applied for 1 minute. Fine scratches were formed on the surface of the base material. Then, the base material 21 was taken out from the alcohol solution and washed.
【００２９】第３工程で、基材３１の表面に人工ダイヤ
モンド被覆膜３３を気相合成法で合成した。その合成条
件は次の通りである。
成膜装置：熱フィラメントＣＶＤ装置
タングステンフィラメントと基材表面間の距離 ５mm
反応ガス：ＣＨ4 ３ｃｃ／ｍｉｎ＋Ｈ2 ９７ｃｃ／ｍｉ
ｎ
反応圧力：１００Ｔｏｒｒ
基材温度：約８５０℃、フィラメント放射のみ、冷却な
し
合成時間：約１０時間
かくして、黄銅からなる基材３１の表面上に、図１３に
示すように、溝３に対応して溝３３ａを有する人工ダイ
ヤモンド被覆膜３３が形成された。In the third step, the artificial diamond coating film 33 was synthesized on the surface of the base material 31 by the vapor phase synthesis method. The synthesis conditions are as follows. Film forming device: hot filament CVD device Distance between tungsten filament and substrate surface 5 mm Reaction gas: CH 4 3 cc / min + H 2 97 cc / mi
n Reaction pressure: 100 Torr Base material temperature: about 850 ° C., filament radiation only, no cooling Synthesis time: about 10 hours Thus, on the surface of the base material 31 made of brass, corresponding to the groove 3 as shown in FIG. Thus, the artificial diamond coating film 33 having the groove 33a was formed.
【００３０】第４工程で、この人工ダイヤモンド被覆膜
３３に表面研磨を施して、溝３３ａと共に基材面上の人
工ダイヤモンド被覆膜３３を除去した。これにより、図
１４に示すように、黄銅からなる基材３１の表面の穴３
２の部分にのみ人工ダイヤモンド被覆膜３３を有する研
磨板が得られた。なお、穴や溝の形状，大きさ等が上記
各実施例のものに限定されるものではないことは勿論で
ある。In the fourth step, the artificial diamond coating film 33 was surface-polished to remove the groove 33a and the artificial diamond coating film 33 on the substrate surface. As a result, as shown in FIG. 14, the holes 3 on the surface of the base material 31 made of brass are formed.
A polishing plate having the artificial diamond coating film 33 only on the portion 2 was obtained. Needless to say, the shapes and sizes of the holes and grooves are not limited to those in the above-mentioned embodiments.
【００３１】[0031]
【発明の効果】以上説明したように、本発明によれば、
ダイヤモンドより熱膨張係数の大きな基材の表面に気相
合成した人工ダイヤモンド被覆膜を形成した人工ダイヤ
モンド被覆材において、その被覆処理に先立ち、前記基
材の表面に微細な溝や穴を形成したため、形成される人
工ダイヤモンド被覆膜の剥離の原因となるクラックの伝
搬がそれらの溝や穴で阻止され、且つそれらの溝や穴内
の人工ダイヤモンド被覆膜は基材からの圧縮力を受ける
こととなって十分に強固に保持される。それゆえ、ダイ
ヤモンドのような高価な基材を用いなくても強固な人工
ダイヤモンド被覆材を得ることが可能になり、安価で長
寿命の超硬質工具や各種の耐摩耗性部材が提供できるな
ど、その工業的価値は極めて高いものである。As described above, according to the present invention,
In the artificial diamond coating material formed by vapor phase synthetic artificial diamond coating film on the surface of the base material having a larger thermal expansion coefficient than diamond, fine grooves and holes are formed on the surface of the base material before the coating treatment. Propagation of cracks that cause peeling of the formed artificial diamond coating film is prevented by the grooves and holes, and the artificial diamond coating film in the grooves and holes receives compressive force from the substrate. And held firmly enough. Therefore, it becomes possible to obtain a strong artificial diamond coating material without using an expensive base material such as diamond, and it is possible to provide inexpensive and long-life super hard tools and various wear resistant members, Its industrial value is extremely high.
【図１】本発明の第１実施例の人工ダイヤモンド被覆用
基材の斜視図である。FIG. 1 is a perspective view of a base material for coating artificial diamond according to a first embodiment of the present invention.
【図２】図１に示す人工ダイヤモンド被覆材の使用態様
を示す斜視図である。FIG. 2 is a perspective view showing how the artificial diamond coating material shown in FIG. 1 is used.
【図３】図１に示す基材の表面構造を示す拡大斜視図で
ある。FIG. 3 is an enlarged perspective view showing a surface structure of the base material shown in FIG.
【図４】上記第１実施例の人工ダイヤモンド被覆材の途
中工程における拡大断面図である。FIG. 4 is an enlarged cross-sectional view of an intermediate step of the artificial diamond coating material of the first embodiment.
【図５】図４の人工ダイヤモンド被覆膜を研磨した後の
拡大断面図である。5 is an enlarged cross-sectional view after polishing the artificial diamond coating film of FIG.
【図６】本発明の第２実施例の人工ダイヤモンド被覆用
基材の斜視図である。FIG. 6 is a perspective view of a base material for coating artificial diamond according to a second embodiment of the present invention.
【図７】図６に示す基材の要部の表面構造を示す拡大斜
視図である。FIG. 7 is an enlarged perspective view showing a surface structure of a main part of the base material shown in FIG.
【図８】上記第２実施例の人工ダイヤモンド被覆材の要
部拡大断面図である。FIG. 8 is an enlarged sectional view of an essential part of the artificial diamond coating material of the second embodiment.
【図９】本発明の第３実施例の人工ダイヤモンド被覆用
基材の斜視図である。FIG. 9 is a perspective view of a base material for coating artificial diamond according to a third embodiment of the present invention.
【図１０】上記第３実施例の人工ダイヤモンド被覆材の
途中工程における拡大断面図である。FIG. 10 is an enlarged cross-sectional view of an intermediate step of the artificial diamond coating material of the third embodiment.
【図１１】図１０の人工ダイヤモンド被覆膜を研磨した
後の拡大断面図である。11 is an enlarged cross-sectional view after polishing the artificial diamond coating film of FIG.
【図１２】本発明の第４実施例の人工ダイヤモンド被覆
用基材の斜視図である。FIG. 12 is a perspective view of a base material for coating artificial diamond according to a fourth embodiment of the present invention.
【図１３】上記第４実施例の人工ダイヤモンド被覆材の
途中工程における拡大断面図である。FIG. 13 is an enlarged cross-sectional view of an intermediate step of the artificial diamond coating material of the fourth embodiment.
【図１４】図１３の人工ダイヤモンド被覆膜を研磨した
後の拡大断面図である。FIG. 14 is an enlarged cross-sectional view after polishing the artificial diamond coating film of FIG.
１ 基材 ３ 溝 ４ 人工ダイヤモンド被覆膜 １１ 基材 １２ 穴 １３ 人工ダイヤモンド被覆膜 ２１ 基材 ２２ 人工ダイヤモンド被覆膜 ３１ 基材 ３２ 穴 ３３ 人工ダイヤモンド被覆膜 1 base material 3 grooves 4 Artificial diamond coating film 11 Base material 12 holes 13 Artificial diamond coating 21 Base material 22 Artificial diamond coating 31 Base material 32 holes 33 Artificial diamond coating
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平４−129622（ＪＰ，Ａ) 特開 昭62−149872（ＪＰ，Ａ) 特開 平１−203293（ＪＰ，Ａ) 特開 平２−160700（ＪＰ，Ａ) 特開 平４−260694（ＪＰ，Ａ) 特開 平２−205432（ＪＰ，Ａ) 特開 平２−9787（ＪＰ，Ａ) 特開 平４−132684（ＪＰ，Ａ) 特開 平５−124896（ＪＰ，Ａ) 特開 平５−311442（ＪＰ，Ａ) 特開 平５−320910（ＪＰ，Ａ) 特開 平５−271942（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C30B 1/00 - 35/00 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-4-129622 (JP, A) JP-A-62-149872 (JP, A) JP-A-1-203293 (JP, A) JP-A-2- 160700 (JP, A) JP-A-4-260694 (JP, A) JP-A-2-205432 (JP, A) JP-A-2-9787 (JP, A) JP-A-4-132684 (JP, A) JP 5-124896 (JP, A) JP 5-311442 (JP, A) JP 5-320910 (JP, A) JP 5-271942 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) C30B 1/00-35/00
Claims (2)
基材の表面に気相合成法により人工ダイヤモンド被覆膜
を形成した人工ダイヤモンド被覆材において、 前記基材の表面のうち少なくとも前記人工ダイヤモンド
被覆膜を形成する部分に、微細な溝及び穴の少なくとも
一方からなる凹部を形成する第１工程と、 前記基材の結合相のうち少なくとも前記凹部の表面の結
合相を腐食により除去する第２工程と、 前記基材の表面及び前記凹部の表面のうち少なくとも一
方に、人工ダイヤモンド結晶成長の基となる核を増やす
微細キズを形成する第３工程と、 前記基材の表面及び前記凹部の表面のうち少なくとも前
記凹部の表面に、人工ダイヤモンド被覆膜を形成する第
４工程と、前記第４工程で形成された人工ダイヤモンド被覆膜に表
面研磨を施して平坦な仕上面を設ける第５工程と、 を有する製造方法により得られるとともに、 前記基材の表面に形成された人工ダイヤモンド被覆膜は
前記表面研磨により除去されて、前記凹部内のみに人工
ダイヤモンド被覆膜が形成されており、前記基材の表面
と前記凹部内の人工ダイヤモンド被覆膜とが平坦な同一
平面をなしていることを特徴とする人工ダイヤモンド被
覆材。 1. An artificial diamond coating material in which an artificial diamond coating film is formed on a surface of a base material having a thermal expansion coefficient larger than that of diamond by a vapor phase synthesis method, wherein at least the artificial diamond coating is provided on the surface of the base material. A first step of forming a concave portion including at least one of a fine groove and a hole in a portion where a film is formed, and a second step of removing at least a binder phase on the surface of the concave portion among the binder phases of the base material by corrosion. And a third step of forming fine scratches on at least one of the surface of the base material and the surfaces of the recesses, which increase the nuclei that are the bases of the artificial diamond crystal growth, and the surface of the base material and the surface of the recesses Among them, the fourth step of forming an artificial diamond coating film on at least the surface of the recess and the artificial diamond coating film formed in the fourth step are exposed.
The artificial diamond coating film formed on the surface of the base material , which is obtained by a manufacturing method having a fifth step of surface polishing to provide a flat finished surface,
Removed by the surface polishing and artificial in the recess only.
A diamond coating is formed on the surface of the substrate
And the artificial diamond coating in the recess are flat and identical
An artificial diamond coating characterized by being flat
Covering material.
基材の表面に気相合成法により人工ダイヤモンド被覆膜
を形成した人工ダイヤモンド被覆材において、 前記基材の表面のうち少なくとも前記人工ダイヤモンド
被覆膜を形成する部分に、微細な溝及び穴の少なくとも
一方からなる凹部を形成する第１工程と、 前記基材の表面及び前記凹部の表面のうち少なくとも一
方に、人工ダイヤモンド結晶成長の基となる核を増やす
微細キズを形成する第２工程と、 前記基材の表面及び前記凹部の表面に前記人工ダイヤモ
ンド被覆膜を形成する第３工程と、 前記第３工程で形成された人工ダイヤモンド被覆膜に表
面研磨を施すことによ り、前記基材の表面に形成された
人工ダイヤモンド被覆膜を除去するとともに、前記凹部
内のみに人工ダイヤモンド被覆膜が形成されているよう
にして、前記基材の表面と前記凹部内の人工ダイヤモン
ド被覆膜とを平坦な同一平面に仕上げる第４工程と、 を有する製造方法により得られることを特徴とする人工
ダイヤモンド被覆材。 2. The coefficient of thermal expansion is larger than that of diamond.
Artificial diamond coating on the surface of substrate by vapor phase synthesis method
In the artificial diamond coating material formed with, at least the artificial diamond of the surface of the substrate.
At least fine grooves and holes are formed in the portion where the coating film is formed.
A first step of forming a recess composed of one side, and at least one of the surface of the base material and the surface of the recess.
The number of nuclei that are the basis for artificial diamond crystal growth
The second step of forming fine scratches, and the artificial diamond on the surface of the base material and the surface of the recess.
And the artificial diamond coating film formed in the third step.
Ri by the applying surface polishing, which is formed on a surface of said substrate
The artificial diamond coating film is removed and
It seems that the artificial diamond coating film is formed only inside
The artificial diamond on the surface of the base material and in the recess
Artificial to a fourth step of finishing and de-coated film on the flat coplanar, characterized in that it is produced by the process having
Diamond coating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33456892A JP3448884B2 (en) | 1992-12-15 | 1992-12-15 | Artificial diamond coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33456892A JP3448884B2 (en) | 1992-12-15 | 1992-12-15 | Artificial diamond coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06183890A JPH06183890A (en) | 1994-07-05 |
| JP3448884B2 true JP3448884B2 (en) | 2003-09-22 |
Family
ID=18278862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33456892A Expired - Fee Related JP3448884B2 (en) | 1992-12-15 | 1992-12-15 | Artificial diamond coating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3448884B2 (en) |
Cited By (2)
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| JP2008280198A (en) * | 2007-05-09 | 2008-11-20 | Nachi Fujikoshi Corp | Diamond film-coated member and its production method |
| WO2016167161A1 (en) * | 2015-04-16 | 2016-10-20 | 株式会社iMott | Protective film and method for producing same |
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| US5935323A (en) * | 1995-04-24 | 1999-08-10 | Toyo Kohan Co., Ltd. | Articles with diamond coating formed thereon by vapor-phase synthesis |
| US5776355A (en) | 1996-01-11 | 1998-07-07 | Saint-Gobain/Norton Industrial Ceramics Corp | Method of preparing cutting tool substrate materials for deposition of a more adherent diamond coating and products resulting therefrom |
| GB9703571D0 (en) * | 1997-02-20 | 1997-04-09 | De Beers Ind Diamond | Diamond-containing body |
| JP2003193236A (en) * | 2001-12-27 | 2003-07-09 | Namiki Precision Jewel Co Ltd | Diamond deposited cvd substrate |
| US8728585B2 (en) | 2004-09-06 | 2014-05-20 | Canon Machinery Inc. | Method for enhancing adhesion of thin film |
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| KR101231666B1 (en) * | 2010-12-21 | 2013-02-08 | 재단법인 포항산업과학연구원 | Method for coating adiabatic layer |
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| JP7023263B2 (en) * | 2019-10-03 | 2022-02-21 | 旭ダイヤモンド工業株式会社 | Rotary cutting tool |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0639704B2 (en) * | 1985-12-21 | 1994-05-25 | 住友電気工業株式会社 | Hard carbon film coating method |
| JP2634183B2 (en) * | 1988-02-08 | 1997-07-23 | キヤノン株式会社 | Method of forming diamond crystal |
| JP2564895B2 (en) * | 1988-06-28 | 1996-12-18 | 株式会社島津製作所 | Plasma processing device |
| JPH02160700A (en) * | 1988-12-12 | 1990-06-20 | Idemitsu Petrochem Co Ltd | Diamond polishing |
| JPH02205432A (en) * | 1989-02-01 | 1990-08-15 | Nippon Seiko Kk | Method and device for coaxially positioning two cylindrical body of different diameter |
| JPH04129622A (en) * | 1990-09-19 | 1992-04-30 | Fujitsu Ltd | Manufacture of diamond-coated tool |
| JP3028121B2 (en) * | 1990-09-25 | 2000-04-04 | 株式会社半導体エネルギー研究所 | How to make diamond thin film |
| JP3213954B2 (en) * | 1991-02-18 | 2001-10-02 | 住友電気工業株式会社 | Method for planarizing diamond coating layer |
| JP2737521B2 (en) * | 1991-09-13 | 1998-04-08 | 富士通株式会社 | Method of coating diamond film |
| JP2670000B2 (en) * | 1992-03-11 | 1997-10-29 | 昭和電工株式会社 | Diamond thin film formation method |
| JP2767514B2 (en) * | 1992-03-24 | 1998-06-18 | 株式会社半導体エネルギー研究所 | Diamond thin film and method for producing the same |
| JP3214891B2 (en) * | 1992-05-15 | 2001-10-02 | 日本特殊陶業株式会社 | Diamond coated members |
-
1992
- 1992-12-15 JP JP33456892A patent/JP3448884B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008280198A (en) * | 2007-05-09 | 2008-11-20 | Nachi Fujikoshi Corp | Diamond film-coated member and its production method |
| WO2016167161A1 (en) * | 2015-04-16 | 2016-10-20 | 株式会社iMott | Protective film and method for producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06183890A (en) | 1994-07-05 |
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