JP2584580Y2 - Semiconductor element measurement probe - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a probe for measuring a semiconductor element used for inspecting electrical characteristics of a semiconductor wafer.

[0002]

2. Description of the Related Art Generally, when probing an amplifier or the like, electric vibrations other than the intended purpose are generated due to circuit configuration defects such as careless arrangement of components and wiring.
It often happens that it interferes with making a proper measurement. This phenomenon is what is called abnormal oscillation. In most cases, this phenomenon occurs when the output of the section having the amplification function is fed back to the input side through an unexpected circuit such as induction.

Conventionally, as means for preventing this abnormal oscillation, the following methods (1) to (6) have been considered. (1) The input circuit and the output circuit do not approach each other, the input circuit and the output circuit do not overlap, or the wiring does not run in parallel. (2) Place a bypass capacitor of appropriate capacity in an appropriate location. (3)
Make the ground wire as short as possible to ensure grounding. (4) Match input / output or circuits. (5) Cover the entire circuit with a seal box or the like. (6) Insert an inductance in series with the power supply line.

[0004]

However, as the gain, bandwidth, and size of the amplifier are increased, the above-described conventional prevention method alone is not sufficient. As a result, abnormal oscillation causes the amplifier to have higher performance. It will be restricted. In particular, when a semiconductor amplifier such as a transistor is measured at a stage before assembly (on-wafer), the wafer is in a bare state, so that noise is easily picked up, input / output matching cannot be achieved, and grounding cannot be ensured. For this reason, abnormal oscillation is liable to occur remarkably, so that a proper evaluation of the semiconductor element cannot be performed before the assembly.

The present invention has been made to solve the above-described problem, and has as its object to provide a semiconductor device measuring probe capable of preventing abnormal oscillation occurring during probing.

[0006]

DISCLOSURE OF THE INVENTION The present invention has been made to achieve the above object, and is to be attached to a probe card for arranging needles in accordance with the arrangement of electrodes of a semiconductor device. This is a probe for measuring a semiconductor element comprising a signal line guide plate to which is adhered, a pair of dielectrics bonded to both surfaces of the signal line guide plate, and a ground plate bonded to the outer surface of each of the dielectrics.

[0007]

In the probe for measuring a semiconductor element according to the present invention, the needle is fixed to the signal line guide plate, and the signal line guide plate is sandwiched between the dielectric and the ground plate, so that the impedance at the signal line guide plate is increased. And the effect of external noise is shielded by the dielectric and the ground plate. In addition, by disposing the signal line guide plate near the electrode of the semiconductor element, the length of the tip of the needle protruding from the signal line guide plate can be shorter than in the related art.

[0008]

1 is a perspective view showing an embodiment of a semiconductor device measuring probe according to the present invention, and FIG. 2 is a schematic external view of a probe card to which the semiconductor device measuring probe is attached. Here, the probe card 1 shown in FIG. 2 is for arranging needles, which will be described later, according to the electrode arrangement of the semiconductor element. The probe 2 for measuring a semiconductor element shown in FIG. Can be FIG. 1 is an enlarged view of a portion A in FIG.

As shown in FIG. 1, a semiconductor device measuring probe 2 of this embodiment comprises a signal line guide plate 3 and a dielectric 4.
And a ground plate 5. The signal line guide plate 3 is a thin plate-shaped conductive member made of, for example, metal,
A needle 6 is fixed to one side of the tip side. The needle 6 is fixed by, for example, brazing or soldering. At this time, the tip of the needle 6 is arranged to slightly protrude from the signal line guide plate 3.

The dielectric 4 is a plate-like member made of an insulating material such as paper, rubber or plastic, and is joined to both surfaces of the signal line guide plate 3 with an adhesive or the like.

The ground plate 5 is a conductive member made of, for example, a metal, and is bonded to the outer surface of each dielectric 4 bonded to both surfaces of the signal line guide plate 3 with an adhesive or the like as described above.

With such a configuration, the semiconductor device measuring probe 2 of the present embodiment having a structure in which the signal line guide plate 3 is sandwiched between the dielectric 4 and the ground plate 5 from both sides in the following manner. To the probe card 1. That is, several engagement grooves 8 are formed on the periphery of the measurement hole 7 of the probe card 1, and the semiconductor element measurement probe 2 is formed in each of these engagement grooves 8.
Are engaged and fixed.

Further, the semiconductor device measuring probe 2 includes:
For example, a coaxial cable 9 is directly attached as signal transmission means. That is, the center conductor 10 of the coaxial cable 9 is joined to the signal line guide plate 3 by soldering or the like, and the outer conductor 11 is similarly joined to the ground plate 5 by soldering or the like.

In the semiconductor device measuring probe 2 according to the present embodiment having such a configuration, the needle 6 is fixed to the signal line guide plate 3, and the signal line guide plate 3 is further connected to the dielectric 4 and the ground plate 5. Since it is sandwiched between
The impedance at the signal line guide plate 3 is reduced (30 Ω or less in the experiment), and the influence of external noise is shielded by the dielectric 4 and the ground plate 5. Thus, the characteristic signal of the semiconductor element taken in through the needle 6 is sent to the coaxial cable 9 with almost no attenuation.

Further, in the semiconductor device measuring probe 2 of the present embodiment, by disposing the signal line guide plate 3 near the electrode of the semiconductor device, the tip length L of the needle 6 protruding from the signal line guide plate 3 is reduced. Can be reduced to, for example, 2 mm or less, which is equivalent to about one fifth of the related art. This makes it possible to immediately guide the characteristic signal of the semiconductor element to the semiconductor element measuring probe 2, thereby suppressing external noise mixing and signal emission.

Further, in the present invention, since the coaxial cable 9 is directly attached to the semiconductor element measuring probe 2, noise mixing into the signal line and signal emission are reduced.

FIG. 3 is a comparison diagram of the characteristic measurement result with the conventional one. In this characteristic measurement, a single FET (field effect transistor) having a power incidental gain of about 10 dB in the 12 GHz band is measured, and the gate voltage is +0.6 V
The voltage was applied in a -0.2 V step. The characteristics of the FET to be measured are slightly different between the conventional example and the embodiment. As is clear from FIG. 3, in the related art, abnormal oscillation occurred due to the influence of noise during probing even though the semiconductor element was normal, and proper characteristic evaluation could not be performed. However, when the semiconductor element measuring probe 2 of the present embodiment is used, the influence of noise is greatly reduced by the above-described configuration, so that abnormal oscillation unlike the conventional case does not occur. It is possible to make an appropriate evaluation at the stage of (wafer).

It should be noted that the semiconductor device measuring probe 2 of this embodiment can be mounted on the probe card 1 as well as
For example, it can be attached to a positioner or the like.

[0019]

As described above, according to the semiconductor device measuring probe of the present invention, the needle is fixed to the signal line guide plate and the signal line guide plate is sandwiched between the dielectric and the ground plate. Thus, the impedance at the signal line guide plate is reduced, and the influence of external noise is shielded by the dielectric and the ground plate. In addition, in the semiconductor device measuring probe of the present invention, the signal line guide plate is arranged near the electrode of the semiconductor device, so that the length of the tip of the needle protruding from the signal line guide plate is significantly larger than before. Can be shorter. As a result, the characteristic signal of the semiconductor device can be immediately guided to the semiconductor device measurement probe, thereby suppressing external noise mixing and signal emission. In this way, it is possible to prevent abnormal oscillation during probing by reducing the impedance at the signal line guide plate and shielding the influence of external noise, and as a result, before assembly. At this stage, the semiconductor element can be properly evaluated.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an embodiment of a semiconductor device measuring probe of the present invention.

FIG. 2 is a schematic external view showing a probe card.

FIG. 3 is a comparison diagram of a characteristic measurement result with a conventional one.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Probe card 2 Probe for semiconductor device measurement 3 Signal line guide plate 4 Dielectric 5 Ground plate 6 Needle

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) G01R 1/06 G01R 31/26 G01R 31/28 H01L 21/66

Claims (1)

(57) [Scope of request for utility model registration] 1. A probe for measuring a semiconductor element attached to a probe card for arranging needles in accordance with the arrangement of electrodes of a semiconductor element, comprising: a signal line guide plate to which the needles are fixed; and a signal line guide plate. A pair of dielectrics joined to both surfaces of the first dielectric member, and a ground plate joined to an outer surface of each dielectric member.