JP2577587B2 - Quartz glass crucible manufacturing equipment - Google Patents
Quartz glass crucible manufacturing equipmentInfo
- Publication number
- JP2577587B2 JP2577587B2 JP62315112A JP31511287A JP2577587B2 JP 2577587 B2 JP2577587 B2 JP 2577587B2 JP 62315112 A JP62315112 A JP 62315112A JP 31511287 A JP31511287 A JP 31511287A JP 2577587 B2 JP2577587 B2 JP 2577587B2
- Authority
- JP
- Japan
- Prior art keywords
- hollow mold
- quartz glass
- glass crucible
- manufacturing apparatus
- crucible manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
Description
【発明の詳細な説明】 産業上の利用分野 本発明は石英ガラスルツボの製造装置に関し、特にシ
リコン単結晶の引上げに用いられる石英ガラスルツボの
製造装置に関するものである。Description: TECHNICAL FIELD The present invention relates to an apparatus for manufacturing a quartz glass crucible, and more particularly to an apparatus for manufacturing a quartz glass crucible used for pulling a silicon single crystal.
従来の技術 半導体のデバイスの基板として用いられるシリコン単
結晶は主にCZ法により製造されている。この方法は原理
的にはルツボ内に多結晶シリコン原料を装填し、周囲か
ら加熱して多結晶シリコン原料を溶融した後、上方から
種結晶を吊下してシリコン融液に浸し、これを引上げる
ことによりシリコン単結晶インゴットを引上げるもので
ある。実用的には、上記ルツボとしては石英ガラス製の
ものが用いられている。2. Description of the Related Art A silicon single crystal used as a substrate of a semiconductor device is mainly manufactured by a CZ method. In this method, in principle, a polycrystalline silicon raw material is charged into a crucible, heated from the surroundings to melt the polycrystalline silicon raw material, and then a seed crystal is suspended from above and immersed in a silicon melt. By raising it, the silicon single crystal ingot is pulled up. Practically, the crucible is made of quartz glass.
この石英ガラスルツボを製造するには粉砕して精製し
た石英粉または珪石粉を回転可能な中空型に供給して中
空型を回転させながら遠心力の作用により成形し、アー
ク等の上部の熱源により溶融することが知られている。To manufacture this quartz glass crucible, crushed and refined quartz powder or silica powder is supplied to a rotatable hollow mold, and is formed by centrifugal force while rotating the hollow mold. It is known to melt.
石英ガラスルツボの製造装置としては、例えば、特公
昭59-34659号公報において開示されている。この製造装
置は、石英ガラスルツボの溶融時に穴明き中空型を回転
可能な囲いに入れて減圧して維持するものである。An apparatus for manufacturing a quartz glass crucible is disclosed in, for example, Japanese Patent Publication No. 59-34659. In this manufacturing apparatus, when a quartz glass crucible is melted, a perforated hollow mold is placed in a rotatable enclosure to maintain a reduced pressure.
発明が解決しようとする問題点 しかしながら、このような製造装置では、大型化がさ
けられず、大容量の真空装置を必要とする。Problems to be Solved by the Invention However, in such a manufacturing apparatus, a large size cannot be avoided and a large-capacity vacuum device is required.
発明の目的 この発明は上述した問題点を解決して、小型化が図れ
る石英ガラスルツボの製造装置を提供することを目的と
する。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-described problems and to provide an apparatus for manufacturing a quartz glass crucible that can be downsized.
問題点を解決するための手段 第１図を参照する。Means for Solving the Problem Reference is made to FIG.
カーボン質材料からなる中空型３の内部に通路6,7を
形成し、中空型３の少くとも内側はガス透過性を有して
いる。つまり圧力差によりガスが内側から通路に導かれ
る構成である。Passages 6 and 7 are formed inside a hollow mold 3 made of a carbonaceous material, and at least the inside of the hollow mold 3 has gas permeability. That is, the gas is guided from the inside to the passage by the pressure difference.
作用 中空型３の外側に囲いを設けなくてもよい。圧力差に
よりガスが粒子層４から通路6,7に導かれる。Action It is not necessary to provide an enclosure outside the hollow mold 3. The gas is guided from the particle bed 4 to the passages 6 and 7 by the pressure difference.
実施例 回転駆動装置１には回転軸２が設けられており、この
回転軸２は中空型３を有している。中空型３の内側には
粒子層４が形成されている。カーボン電極を用いたアー
ク加熱源５がカーボン質材料からなる中空型３の上部に
位置されている。真空ポンプ（図示せず）は通路6,7を
介して粒子層４から空気を引くようになっている。前記
噴出口からはたとえばH2,Heあるいはそれらの混合のガ
スを中空型３内に流入できるようになっている。Embodiment A rotary drive 1 is provided with a rotary shaft 2, which has a hollow mold 3. A particle layer 4 is formed inside the hollow mold 3. An arc heating source 5 using a carbon electrode is located above the hollow mold 3 made of a carbonaceous material. A vacuum pump (not shown) draws air from the particle layer 4 via passages 6,7. For example, H 2 , He, or a mixture thereof can flow into the hollow mold 3 from the jet port.
粒子層４は、結晶質石英または非晶質石英ガラスから
なる微細に磨砕された粒子である。The particle layer 4 is finely ground particles made of crystalline quartz or amorphous quartz glass.
中空型３は上型部８と下型部９からなり、これらはね
じ部10により連結されている。上型部８の円周方向には
上記通路６が形成されている。下型部９には第２図にも
示すように４本の通路７が形成されている。これらの通
路７と通路６はつながっている。通路７は前記真空ポン
プに連絡している。The hollow mold 3 includes an upper mold part 8 and a lower mold part 9, which are connected by a screw part 10. The passage 6 is formed in the circumferential direction of the upper die 8. In the lower mold part 9, four passages 7 are formed as shown in FIG. These passages 7 and 6 are connected. The passage 7 communicates with the vacuum pump.
中空型３の特性としては気孔率10〜30％で通気率５×
10-5〜１×10-3cm/secのカーボン質材料が好ましく、中
空型３の外側はコーティング膜もしくは含浸層が形成さ
れていると更に好ましい。コーティング膜としてはたと
えば、SiC,Si3N4などのものが採用でき、それらの厚み
はたとえば0.1mmである。また含浸層としてはカーボン
の中空型３の外面に含浸材等を含浸させたものである。
含浸材としては、フェノール・レジンおよびタールピッ
チ，フルフリルアルコールなどが採用できる。As the characteristics of the hollow mold 3, the porosity is 10 to 30% and the air permeability is 5 ×.
A carbonaceous material of 10 −5 to 1 × 10 −3 cm / sec is preferable, and a coating film or an impregnated layer is more preferably formed outside the hollow mold 3. As the coating film, for example, a film of SiC, Si 3 N 4 or the like can be adopted, and their thickness is, for example, 0.1 mm. The impregnated layer is obtained by impregnating the outer surface of the carbon hollow mold 3 with an impregnating material or the like.
Examples of the impregnating material include phenolic resin, tar pitch, and furfuryl alcohol.
使用に際しては、中空型３を垂直軸のまわりに回転
し、中空型３の内周壁上には層として、底部にはたまる
ように粒子を連続的あるいは非連続的に中空型３に添加
する。そして、粒子層４の層厚を通して内側から外側へ
加熱源５の熱をかける。In use, the hollow mold 3 is rotated about a vertical axis, and particles are continuously or discontinuously added to the hollow mold 3 as a layer on the inner peripheral wall of the hollow mold 3 and accumulated at the bottom. Then, heat of the heating source 5 is applied from the inside to the outside through the thickness of the particle layer 4.
これにより粒子層４の一部だけ溶融し、薄い部分層を
半融焼結させ、粒子層４の残部を粒子状態のままに止ら
せる。As a result, only a part of the particle layer 4 is melted, the thin partial layer is semi-fused and sintered, and the remaining part of the particle layer 4 remains in the particle state.
得られた石英ガラスルツボを冷却後中空型３からとり
出すのである。The obtained quartz glass crucible is taken out from the hollow mold 3 after cooling.
ところで、この発明における中空型は、その少くとも
内側がガス透過性を有し、ガスを通路に導ければよい。By the way, at least the inside of the hollow mold in the present invention has gas permeability, and it is sufficient that the gas is guided to the passage.
発明の効果 以上説明したようにこの発明によれば、中空型の内部
に通路を有しているので大型の囲いを必要とせず小型化
が図れる。Effect of the Invention As described above, according to the present invention, the passage is provided inside the hollow mold, so that the size can be reduced without requiring a large enclosure.
第１図はこの発明の石英ガラスルツボの製造装置の図、
第２図は第１図のＡ−Ａ線における断面図である。 ３……中空型 ４……粒子層 ６……通路 ７…… 〃FIG. 1 is a view of an apparatus for manufacturing a quartz glass crucible of the present invention,
FIG. 2 is a sectional view taken along line AA of FIG. 3 ... hollow type 4 ... particle layer 6 ... passage 7 ... 〃
───────────────────────────────────────────────────── フロントページの続き (72)発明者 斉藤 正行 山形県西置賜郡小国町大字小国町378番 地 東芝セラミックス株式会社小国製造 所内 (72)発明者 和田 佳久 山形県西置賜郡小国町大字小国町378番 地 東芝セラミックス株式会社小国製造 所内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Masayuki Saito 378 Oguni-machi, Oguni-machi, Oguni-machi, Nishiokitama-gun, Yamagata Prefecture Inside the Oguni Plant of Toshiba Ceramics Co., Ltd. Address Toshiba Ceramics Co., Ltd. Oguni Works
Claims (3)
微細に摩砕された粒子をカーボン質材料からなる中空型
に入れて、圧力差によりこの中空型に粒子を引いて垂直
軸の周りに中空型を回転して粒子層を形成しこの粒子層
を加熱することにより石英ガラスルツボを製造する製造
装置において、中空型の内部に通路が形成されかつ中空
型の少くとも内側はガス透過性を有し、圧力差により内
側からガスを通路に導ける構成となることを特徴とする
石英ガラスルツボ製造装置。A finely ground particle made of crystalline quartz or amorphous quartz glass is put into a hollow mold made of a carbonaceous material, and the particles are drawn into the hollow mold by a pressure difference, and the particles are drawn around a vertical axis. In a manufacturing apparatus for manufacturing a quartz glass crucible by rotating a hollow mold to form a particle layer and heating the particle layer, a passage is formed inside the hollow mold and at least the inside of the hollow mold has gas permeability. A quartz glass crucible manufacturing apparatus characterized in that a gas is introduced into the passage from the inside by a pressure difference.
ことによりガス透過を阻止するようになっている特許請
求の範囲第１項に記載の石英ガラスルツボ製造装置。2. A quartz glass crucible manufacturing apparatus according to claim 1, wherein gas permeation is prevented by applying a coating film to the outside of said hollow mold.
を含浸させることにより行う特許請求の範囲第２項に記
載の石英ガラスルツボ製造装置。3. The quartz glass crucible manufacturing apparatus according to claim 2, wherein the gas permeation is prevented by impregnating the outside of the hollow mold with an impregnating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62315112A JP2577587B2 (en) | 1987-12-15 | 1987-12-15 | Quartz glass crucible manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62315112A JP2577587B2 (en) | 1987-12-15 | 1987-12-15 | Quartz glass crucible manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01157426A JPH01157426A (en) | 1989-06-20 |
| JP2577587B2 true JP2577587B2 (en) | 1997-02-05 |
Family
ID=18061564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62315112A Expired - Fee Related JP2577587B2 (en) | 1987-12-15 | 1987-12-15 | Quartz glass crucible manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2577587B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0255285A (en) * | 1988-08-19 | 1990-02-23 | Nippon Kojundo Sekiei Kk | Method and appartus for producing quartz crucible |
| JP3765368B2 (en) * | 1999-06-01 | 2006-04-12 | 東芝セラミックス株式会社 | Quartz glass crucible and method for producing the same |
| JP5069663B2 (en) | 2008-10-31 | 2012-11-07 | ジャパンスーパークォーツ株式会社 | Quartz glass crucible with multilayer structure |
| JP7163863B2 (en) * | 2019-05-08 | 2022-11-01 | 株式会社Sumco | Quartz crucible manufacturing mold and quartz crucible manufacturing apparatus using the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5934659A (en) * | 1982-08-20 | 1984-02-25 | Toshiba Corp | Solid-state image pickup device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8427915D0 (en) * | 1984-11-05 | 1984-12-12 | Tsl Thermal Syndicate Plc | Vitreous silica products |
-
1987
- 1987-12-15 JP JP62315112A patent/JP2577587B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5934659A (en) * | 1982-08-20 | 1984-02-25 | Toshiba Corp | Solid-state image pickup device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01157426A (en) | 1989-06-20 |
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