JPH0255285A - Method and appartus for producing quartz crucible - Google Patents

Method and appartus for producing quartz crucible

Info

Publication number
JPH0255285A
JPH0255285A JP20477888A JP20477888A JPH0255285A JP H0255285 A JPH0255285 A JP H0255285A JP 20477888 A JP20477888 A JP 20477888A JP 20477888 A JP20477888 A JP 20477888A JP H0255285 A JPH0255285 A JP H0255285A
Authority
JP
Japan
Prior art keywords
mold
quartz
heating
crucible
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20477888A
Other languages
Japanese (ja)
Other versions
JPH0585515B2 (en
Inventor
Shin Takeshita
武下 臣
Nobuyuki Tateno
立野 信之
Nobuya Watanabe
渡辺 乃扶也
Alexander Winterburn John
ジョン・アレキサンダー・ウインターバン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON KOJUNDO SEKIEI KK
Saint Gobain Quartz Ltd
Mitsubishi Metal Corp
Original Assignee
NIPPON KOJUNDO SEKIEI KK
TSL Group PLC
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON KOJUNDO SEKIEI KK, TSL Group PLC, Mitsubishi Metal Corp filed Critical NIPPON KOJUNDO SEKIEI KK
Priority to JP20477888A priority Critical patent/JPH0255285A/en
Publication of JPH0255285A publication Critical patent/JPH0255285A/en
Publication of JPH0585515B2 publication Critical patent/JPH0585515B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/09Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To obtain a quartz crucible having a high air bubble content in its outer peripheral side part by stopping a pressure reduction during the course of heating at the time of forming a quartz packing layer on the inner peripheral surface of a gas permeable mold, heating and melting the layer from the inner peripheral surface side and reducing the pressure from the outer periphery of the mold.
CONSTITUTION: A core 40 is inserted to the rotating gas permeable mold 21 and quartz powder is packed therebetween to form the quartz packing layer on the inside surface of the mold 21. The core 40 is pulled up and an electrode 50 is installed. The quartz packing layer is heated and melted by an arc discharge to form a thin molten layer. The gas in the quartz packing layer is sucked and discharged through the vent holes 24 of the mold 10 by activating a pressure reduction mechanism 30. The pressure reduction is stopped after about 120 seconds, and the arc discharge is maintained. The air leaks into the reduced pressure chamber 23 from the spacing between the mold 21 and a mold holder 22 to restore the atm. pressure in the chamber after the stop of the pressure reduction. The heating is continued thereafter as well. As a result, the quartz crucible having the higher air bubble content of the outer peripheral side part as compared with the inner peripheral side part is obtd.
COPYRIGHT: (C)1990,JPO

Description

【発明の詳細な説明】 [産業上の利用分野コ 本発明は、半導体用シリコン単結晶を製造する際に用い
られる石英ルツボの製造方法と装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method and apparatus for manufacturing a quartz crucible used in manufacturing silicon single crystals for semiconductors.

[従来技術と問題点コ 多結晶シリコンからシリコン単結晶を製造する際に、多
結晶シリコンを溶融するために石英ルツボが用いられる
[Prior Art and Problems] When producing silicon single crystals from polycrystalline silicon, a quartz crucible is used to melt the polycrystalline silicon.

石英ルツボの製造に関し、従来幾つかの製造方法が知ら
れている。その−例によると、回転可能な中空のモール
ドに、原料の石英粉体が該モールドの内周面に沿って充
填され、モールドを回転しながら石英粉体を加熱溶融す
ることにより遠心力の作用により溶融又は半溶融の石英
充填層がモールド内周面に伸圧されルツボの形状に焼結
される。
Several manufacturing methods are conventionally known for manufacturing quartz crucibles. According to that example, a rotatable hollow mold is filled with quartz powder as a raw material along the inner peripheral surface of the mold, and the centrifugal force is applied by heating and melting the quartz powder while rotating the mold. The molten or semi-molten quartz filling layer is expanded onto the inner peripheral surface of the mold and sintered into the shape of a crucible.

この方法によって製造される石英ルツボはその壁体内部
に気泡が多数残留する欠点がある。壁体(周壁及び底壁
)に気泡が多いとルツボの強度が低下する。更にルツボ
の加熱時にルツボ内周面付近の気泡が熱膨張して該内周
面を部分的に剥離させ、剥離した石英小片が溶融シリコ
ンに混入して単結晶化率(シリコン多結晶が単結晶にな
る割合)が低下する。
The quartz crucible manufactured by this method has the disadvantage that many air bubbles remain inside the wall. If there are many bubbles in the walls (peripheral wall and bottom wall), the strength of the crucible will decrease. Furthermore, when the crucible is heated, bubbles near the inner circumferential surface of the crucible expand thermally, causing the inner circumferential surface to partially peel off, and the peeled off quartz pieces mix into the molten silicon, increasing the single crystallization rate (silicon polycrystalline becomes single crystal). ) decreases.

其処で、内部気泡の少ないルツボが求められ、その製造
法として、モールドに充填した石英粉体を減圧下で加熱
溶融する方法が知られている(特公昭59−34559
号)、この方法によると、モールドに充填した石英層の
内部気泡が溶融時に吸引除去されるので、肉眼では壁体
内部に気泡が殆ど観察されないルツボが得られる。然し
乍ら、この製造方法においては、製造時に、回転するモ
ールドの内側で石英充填層が加熱溶融されるに伴い、石
英に比べて格段に比重の小さい気泡が次第に回転軸側つ
まり石英充填層の内周面側に移動し、肉眼では観察出来
ない微小な気泡(マイクロバブル)が壁体内周面の近傍
に偏在することになる。該微t’s気泡はルツボ加熱時
に熱膨張して前述と同様の問題を生じる。
Therefore, there is a need for a crucible with few internal air bubbles, and a known manufacturing method involves heating and melting quartz powder filled in a mold under reduced pressure (Japanese Patent Publication No. 59-34559).
According to this method, the air bubbles inside the quartz layer filled in the mold are removed by suction during melting, so a crucible with almost no air bubbles observed inside the wall can be obtained with the naked eye. However, in this manufacturing method, as the quartz filling layer is heated and melted inside the rotating mold during manufacturing, air bubbles, which have a much lower specific gravity than quartz, gradually move toward the rotating shaft side, that is, the inner periphery of the quartz filling layer. Microbubbles that move toward the surface and cannot be observed with the naked eye become unevenly distributed near the inner peripheral surface of the wall. The fine T's bubbles thermally expand when the crucible is heated, causing the same problem as described above.

[発明の目的及び構成] 本発明は、ルツボ壁体外周側部分に気泡が残存する一方
壁体内周面近傍に気泡が少ない石英ルツボの製造方法お
よびその装置を提供することを目的とする。
[Objects and Structure of the Invention] An object of the present invention is to provide a method and apparatus for manufacturing a quartz crucible in which air bubbles remain on the outer peripheral side of the crucible wall, while fewer air bubbles are present near the inner peripheral surface of the wall.

本発明によれば、回転するガス透過性モールドの内周面
に沿って石英粉体を充填し、該石英粉体充填層をその内
周面側から加熱溶融し、該溶融時にモールドの外周を減
圧して石英粉体の内部ガスをガス透過性モールドの壁を
通じて吸引排気しながらルツボの形状に焼結させる製造
方法において。
According to the present invention, quartz powder is filled along the inner peripheral surface of a rotating gas permeable mold, the quartz powder filled layer is heated and melted from the inner peripheral surface side, and the outer periphery of the mold is In the manufacturing method, the internal gas of the quartz powder is sintered into the shape of a crucible under reduced pressure while being sucked and exhausted through the wall of a gas-permeable mold.

上記加熱溶融の途中で減圧を停止することにより内周側
部分に比較して外周側部分の気泡含有率が大きい石英ル
ツボを製造する方法が提供される。
There is provided a method for manufacturing a quartz crucible in which the outer circumferential portion has a higher bubble content than the inner circumferential portion by stopping the depressurization in the middle of the heating and melting.

また、本発明によれば、回転自在なガス透過性モールド
と、該モールドの回転手段と、該モールドの外周を減圧
する手段と、該モールドの内側に装入される取外し自在
な中子及び取外し自在な加熱手段とを有する石英ルツボ
製造装置において、モールドがモールドホルダに脱着自
在に嵌着しており、該モールドホルダは該モールを支持
して回転し且つ該モールドの外周に減圧室を形成するこ
とを特徴とする装置が提供される。
Further, according to the present invention, there is provided a rotatable gas permeable mold, a means for rotating the mold, a means for reducing the pressure around the outer periphery of the mold, and a removable core inserted into the inside of the mold and a removable core. In a quartz crucible manufacturing apparatus having a flexible heating means, the mold is removably fitted into a mold holder, the mold holder rotates while supporting the mold, and forms a decompression chamber around the outer periphery of the mold. An apparatus is provided which is characterized in that:

本発明の製造方法において、ボウル(椀)状でありガス
透過性壁を有する回転可能なモールドが用いられる。該
モールドの中空な内側中央に中子を挿入し、モールドを
回転しながらモールドと中子の間に原料の石英粉体を供
給する。石英粉体は回転するモールドの遠心力の作用に
よりモールド内周面に押しつけられ、該内周面に沿って
堆積し石英充填層を形成する1次に中子を引き上げ、ア
ーク電極などの加熱源を設置し、石英充填層をその内周
面側から加熱溶融する。該加熱により先ず石英充填層の
内周面に薄い溶融乃至半溶融の被覆が形成される。一方
、該加熱の際にモールドを減圧し、ガス透過性内周面を
通じて石英充填層内部のガスを吸引排気する。加熱の進
行に伴い、石英充填層はその内周面から外表面付近まで
次第に溶融し焼結する。以上述べた石英粉体の充填から
減圧下での加熱溶融までの工程は、従来の製造方法と共
通する。
In the manufacturing method of the present invention, a rotatable mold that is bowl-shaped and has gas-permeable walls is used. A core is inserted into the hollow center of the mold, and the raw material quartz powder is supplied between the mold and the core while rotating the mold. The quartz powder is pressed against the inner peripheral surface of the mold by the action of the centrifugal force of the rotating mold, and is deposited along the inner peripheral surface to form a quartz filled layer. is installed, and the quartz filling layer is heated and melted from the inner peripheral surface side. The heating first forms a thin molten or semi-molten coating on the inner peripheral surface of the quartz filling layer. On the other hand, during the heating, the pressure of the mold is reduced, and the gas inside the quartz packed layer is sucked and exhausted through the gas-permeable inner circumferential surface. As the heating progresses, the quartz filled layer gradually melts and sinters from the inner peripheral surface to the vicinity of the outer surface. The steps described above from filling quartz powder to heating and melting under reduced pressure are common to conventional manufacturing methods.

本発明の製造方法は、上記減圧操作を加熱溶融、の途中
で停止し、減圧停止後、更に石英充填層をその内周面か
ら加熱する点において、従来の製造方法と根本的に異な
る。上記減圧操作によりルツボ壁体内部の気泡は外周側
部分に引き寄せられており、該減圧の停止により外周側
部分は気泡が残留したまま焼結する。一方向周面側部分
は、微小気泡が残留するものの比較的大きな気泡は列理
側部分に引き寄せられて内周側部分には存在しないため
気泡の少ない状態で焼結する。この結果、ルツボ外周側
部分の気泡含有率が内周側部分より大きいルツボが得ら
れる。
The manufacturing method of the present invention is fundamentally different from conventional manufacturing methods in that the depressurization operation is stopped during heating and melting, and after the depressurization is stopped, the quartz packed bed is further heated from its inner peripheral surface. The air bubbles inside the crucible wall are drawn to the outer circumference side by the pressure reduction operation, and when the pressure reduction is stopped, the outer circumference side is sintered with the air bubbles remaining. Although microbubbles remain in the one-direction circumference side portion, relatively large bubbles are attracted to the grain side portion and do not exist in the inner circumference side portion, so that sintering is performed with few bubbles. As a result, a crucible is obtained in which the bubble content in the outer circumferential side of the crucible is higher than in the inner circumferential side.

減圧停止時間については、加熱溶融をt分間行なう場合
、加熱開始から0.2を分径〜0.9t分前に上記吸引
排気を停止するのが良い。0.2を分より前に減圧を停
止すると、単結晶シリコンの引上げに必要な溶融厚みを
有する透明層が形成されない。
Regarding the depressurization stop time, when heating and melting is performed for t minutes, it is preferable to stop the above-mentioned suction and exhaust 0.2 to 0.9 t minutes before the start of heating. If the vacuum is stopped before 0.2 minutes, a transparent layer with the melt thickness necessary for pulling single crystal silicon will not be formed.

0.9t分よりあとに減圧を停止すると真空引き孔の孔
に溶融層が吸込まれて外周面に凸部が生じるので好まし
くない。石英充填層の外表面に薄い未溶融状態の剥離層
を残して上記加熱を終了し、冷却同化後、モールドから
取り出す。
If the vacuum is stopped after 0.9 t minutes, the molten layer will be sucked into the vacuum hole and a convex portion will be formed on the outer peripheral surface, which is not preferable. The above heating is completed leaving a thin unmolten peeling layer on the outer surface of the quartz filled layer, and after cooling and assimilation, the quartz filling layer is taken out from the mold.

上記製造方法を実施するための装置として、回転自在な
ガス透過性モールドと、該モールドの回転手段と、該モ
ールドの外周を減圧する手段と。
An apparatus for carrying out the above manufacturing method includes a rotatable gas permeable mold, means for rotating the mold, and means for reducing pressure around the outer periphery of the mold.

該モールドの内側に装入さ九る取外し自在な中子及び取
外し自在な加熱手段とを有する石英ルツボ製造装置であ
って、モールドがモールドホルダに脱着自在に嵌着して
おり、該モールドホルダは該モールを支持して回転し且
つ該モールドの外周に減圧室を形成することを特徴とす
る装置を用いることが出来る。
A quartz crucible manufacturing apparatus having a removable core inserted into the inside of the mold and a removable heating means, the mold being removably fitted into a mold holder, the mold holder comprising: It is possible to use an apparatus that supports and rotates the mold and forms a decompression chamber around the outer periphery of the mold.

本発明に係る製造装置の一例を第1図に示す。An example of a manufacturing apparatus according to the present invention is shown in FIG.

該製造装置10は1回転自在なモールド形成部分20と
、該モールド形成部分20を回転する回転手段(図示省
略)と、該モールド形成部分20に接続する減圧手段3
0とを有する。モールド形成部分20は石英粉体が装入
されるモールド21と該モールド21を支持するモール
ドホルダ22とから形成される。モールド21及びモー
ルドホルダ22は何れも中空であり、筒状の周壁21a
、22aと底壁21b、22bとを有し、此れ等は気密
な減圧室23を形成して脱着自在に嵌合している。モー
ルド21及びモールドホルダ22は回転手段により一体
に回転される。モールド21には複数本の通気孔24が
穿設されており、該通気孔24はモールド21の壁21
cを通じて上記減圧室23に連通している。モールド2
1の下端外周にモールドホルダ22の上端22cが挿入
する嵌合溝を設け、且つ該外周縁部にモールドホルダ2
2の上部内周面に密着する凸部21dを形成すると良い
。モールドホルダ22の底壁22bには減圧機構30に
通じる孔25が設けられている。減圧機構30は真空ポ
ンプ31、フィルター32及び電磁バルブ33を含む配
管系により構成されている。
The manufacturing apparatus 10 includes a mold forming part 20 that can freely rotate once, a rotating means (not shown) for rotating the mold forming part 20, and a depressurizing means 3 connected to the mold forming part 20.
0. The mold forming portion 20 is formed from a mold 21 into which quartz powder is charged and a mold holder 22 that supports the mold 21. Both the mold 21 and the mold holder 22 are hollow, and have a cylindrical peripheral wall 21a.
, 22a and bottom walls 21b, 22b, which form an airtight vacuum chamber 23 and are removably fitted together. The mold 21 and mold holder 22 are rotated together by a rotating means. A plurality of ventilation holes 24 are bored in the mold 21, and the ventilation holes 24 are formed in the wall 21 of the mold 21.
It communicates with the decompression chamber 23 through c. mold 2
A fitting groove into which the upper end 22c of the mold holder 22 is inserted is provided on the outer periphery of the lower end of the mold holder 2.
It is preferable to form a convex portion 21d that closely contacts the upper inner circumferential surface of No.2. A hole 25 communicating with the pressure reducing mechanism 30 is provided in the bottom wall 22b of the mold holder 22. The pressure reducing mechanism 30 is composed of a piping system including a vacuum pump 31, a filter 32, and an electromagnetic valve 33.

モールド21の上方には上下動自在な中子40とア一り
放電を行なう上下動自在な電極50が配設さ九でいる。
A vertically movable core 40 and a vertically movable electrode 50 for producing a single discharge are disposed above the mold 21.

これら中子40及び電極50は従来のものを用いること
ができる。
Conventional cores 40 and electrodes 50 can be used.

[発明の効果コ 本発明の製造方法によれば、壁体内周面付近の気泡含有
率が小さく且つ外周側部分の気泡含有率の大きなルツボ
が得られる。本発明の製造方法に係るルツボは、ルツボ
の使用時に加熱されても、内周側部分の微)」1気泡が
気泡含有率の大きな外周側部分に吸収され、此の結果、
内周側部分の気泡の熱膨張が抑制されるのでルツボ内周
面の部分的な剥離を生じる虞がない。従って、従来の方
法で製造されたルツボに比べ、単結晶他家が格段に良い
[Effects of the Invention] According to the manufacturing method of the present invention, a crucible can be obtained in which the bubble content in the vicinity of the inner peripheral surface of the wall is small and the bubble content in the outer circumference side is large. Even when the crucible according to the manufacturing method of the present invention is heated during use, the microscopic bubbles in the inner circumferential portion are absorbed into the outer circumferential portion with a large bubble content, and as a result,
Since the thermal expansion of the bubbles in the inner peripheral side portion is suppressed, there is no risk of partial peeling of the inner peripheral surface of the crucible. Therefore, compared to crucibles produced by conventional methods, single crystal allogenes are much better.

本発明に係る製造装置によれば、上記減圧停止後に、モ
ールドとモー・ルドホルダとの間の微小間隙から大気が
侵入して減圧室内部が直ちに大気圧に復帰するので石英
充填層の吸引が迅速に停止され、外周側部分に気泡を残
存させるのが容易である。また9本発明の装置において
は、モールドとモールドホルダとを分離できるので50
径の異なるルツボを製造する際、モールドのみを取替え
て使用できる。減圧機構を有する製造装置においては、
該減圧機構に接続されている部分の交換が煩雑であり、
本発明装置のように減圧機構が接続されているモールド
ホルダを交換せずに使用できる実用上の利点は大きい。
According to the manufacturing apparatus according to the present invention, after the depressurization is stopped, the atmosphere enters through the minute gap between the mold and the mold holder, and the inside of the decompression chamber immediately returns to atmospheric pressure, so that the suction of the quartz packed layer is quickly performed. This makes it easy to leave bubbles in the outer circumference. Furthermore, in the apparatus of the present invention, the mold and mold holder can be separated, so
When manufacturing crucibles with different diameters, only the mold can be replaced. In manufacturing equipment that has a pressure reduction mechanism,
Replacement of the parts connected to the pressure reducing mechanism is complicated;
There is a great practical advantage that the mold holder to which the decompression mechanism is connected can be used without replacement, as in the apparatus of the present invention.

[実施例] ミロに示す装置を用い1回転するモールド2】に中子4
0を挿入し、これらの間に石英粉体を充填し、モールド
21の内周面に沿って、石英充填層を形成した。引き続
き中子40を引き上げて電極50をモ、−ルド内側の中
央部に設置し、アーク放電を行なって5石英充填層をそ
の内周面側から加熱溶融した。加熱開始から45秒後に
石英充填層の内周面に薄い溶融層が形成され、この時点
で減圧機構30の真空ポンプ31を作動させ、石英充填
層内部のガスをモールド10の通気孔24を通じ、 6
00 +i m Hgの圧力で吸引排気した。減圧開始
から120秒後に減圧を停止し、アーク放電を継続した
。減圧停止後、モールド21とモールドホルダ22との
隙間からエアーが漏入して減圧室23が大気圧に復帰し
、減圧停止後の加熱は大気圧下で継続された。アーク溶
融開始から15分後にアーク放電を終了し冷却後、上記
石英充填層が溶融焼結した石英ルツボを得た。
[Example] A core 4 is placed in a mold 2 which rotates once using the device shown in Milo.
0 was inserted, and quartz powder was filled between them to form a quartz filling layer along the inner circumferential surface of the mold 21. Subsequently, the core 40 was pulled up, the electrode 50 was placed at the center inside the mold, and arc discharge was performed to heat and melt the quartz filling layer 5 from the inner peripheral surface side. After 45 seconds from the start of heating, a thin molten layer is formed on the inner circumferential surface of the quartz filled layer, and at this point, the vacuum pump 31 of the pressure reduction mechanism 30 is activated to blow the gas inside the quartz filled layer through the vent hole 24 of the mold 10. 6
The vacuum was evacuated at a pressure of 0.00 + i m Hg. The pressure reduction was stopped 120 seconds after the start of the pressure reduction, and the arc discharge was continued. After the decompression was stopped, air leaked through the gap between the mold 21 and the mold holder 22, and the decompression chamber 23 returned to atmospheric pressure, and the heating after the decompression was stopped was continued under atmospheric pressure. Arc discharge was terminated 15 minutes after the start of arc melting, and after cooling, a quartz crucible in which the quartz filling layer was melted and sintered was obtained.

本発明の製造方法に係る上記石英ルツボを用いて多結晶
シリコンを溶融し、単結晶シリコンを引き上げた。この
場合の単結晶化率を次表に示す(No、1.2)。また
同一の条件下で、従来の石英ルツボを用いた場合の単結
晶化率を比較例(No3.4)として併せて次表に示す
Polycrystalline silicon was melted using the quartz crucible according to the manufacturing method of the present invention, and single-crystalline silicon was pulled. The single crystallization rate in this case is shown in the following table (No, 1.2). The following table also shows the single crystallization rate under the same conditions using a conventional quartz crucible as a comparative example (No. 3.4).

3o−減圧機構、 4〇−中子、 50−電極3o-pressure reduction mechanism, 40-Nakako, 50-electrode

Claims (3)

【特許請求の範囲】[Claims] (1)回転するガス透過性モールドの内周面に沿って石
英粉体を充填し、該石英粉体充填層をその内周面側から
加熱溶融し、該溶融時にモールドの外周を減圧して石英
粉体の内部ガスをガス透過性モールドの壁を通じて吸引
排気しながらルツボの形状に焼結させる製造方法におい
て、上記加熱溶融の途中で減圧を停止することにより内
周側部分に比較して外周側部分の気泡含有率が大きい石
英ルツボを製造する方法。
(1) Fill quartz powder along the inner circumferential surface of a rotating gas-permeable mold, heat and melt the quartz powder filled layer from the inner circumferential side, and reduce pressure on the outer circumference of the mold during melting. In a manufacturing method in which the internal gas of quartz powder is sintered into the shape of a crucible while being sucked and exhausted through the wall of a gas-permeable mold, by stopping the depressurization midway through the heating and melting process, the outer periphery is smaller than the inner periphery. A method of manufacturing a quartz crucible with a high bubble content in the side portion.
(2)加熱溶融をt分間行なう際に、加熱開始から0.
2t分後〜0.9t分前に吸引排気を停止して、外周側
部分の気泡含有率を内周側部分より大きくする第1請求
項の方法。
(2) When heating and melting is performed for t minutes, 0% from the start of heating.
The method according to claim 1, wherein the suction and exhaustion is stopped after 2 t minutes to 0.9 t minutes before, so that the bubble content in the outer circumference side portion is higher than that in the inner circumference side portion.
(3)回転自在なガス透過性モールドと、該モールドの
回転手段と、該モールドの外周を減圧する手段と、該モ
ールドの内側に装入される取外し自在な中子及び取外し
自在な加熱手段とを有する石英ルツボ製造装置において
、モールドがモールドホルダに脱着自在に嵌着しており
、該モールドホルダは該モールを支持して回転し且つ該
モールドの外周に減圧室を形成することを特徴とする装
置。
(3) A rotatable gas permeable mold, a means for rotating the mold, a means for reducing the pressure around the outer periphery of the mold, a removable core inserted into the inside of the mold, and a removable heating means. A quartz crucible manufacturing apparatus having a mold is detachably fitted into a mold holder, the mold holder rotates while supporting the mold, and forms a decompression chamber around the outer periphery of the mold. Device.
JP20477888A 1988-08-19 1988-08-19 Method and appartus for producing quartz crucible Granted JPH0255285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20477888A JPH0255285A (en) 1988-08-19 1988-08-19 Method and appartus for producing quartz crucible

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20477888A JPH0255285A (en) 1988-08-19 1988-08-19 Method and appartus for producing quartz crucible

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP9067778A Division JP2736969B2 (en) 1997-03-21 1997-03-21 Quartz crucible manufacturing equipment

Publications (2)

Publication Number Publication Date
JPH0255285A true JPH0255285A (en) 1990-02-23
JPH0585515B2 JPH0585515B2 (en) 1993-12-07

Family

ID=16496192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20477888A Granted JPH0255285A (en) 1988-08-19 1988-08-19 Method and appartus for producing quartz crucible

Country Status (1)

Country Link
JP (1) JPH0255285A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0715342A3 (en) * 1994-11-30 1996-10-16 Heraeus Quarzglas Single-wafer heat-treatment apparatus and method of manufacturing reactor vessel used for same
US5651827A (en) * 1996-01-11 1997-07-29 Heraeus Quarzglas Gmbh Single-wafer heat-treatment apparatus and method of manufacturing reactor vessel used for same
WO2009054529A1 (en) 2007-10-25 2009-04-30 Japan Super Quartz Corporation Quartz glass crucible, method for manufacturing quartz glass crucible and application of quartz glass crucible
WO2009122936A1 (en) 2008-03-31 2009-10-08 ジャパンスーパークォーツ株式会社 Quartz glass crucible and process for producing the same
US8394198B2 (en) 2008-11-28 2013-03-12 Japan Super Quartz Corporation Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof
JP2013212992A (en) * 2008-12-19 2013-10-17 Shinetsu Quartz Prod Co Ltd Method of making silica crucible with pure and bubble-free crucible inner layer
US8562739B2 (en) 2008-12-29 2013-10-22 Japan Super Quartz Corporation Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof
US8951346B2 (en) 2008-12-09 2015-02-10 Japan Super Quartz Corporation Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof
KR20220041649A (en) * 2020-09-25 2022-04-01 주식회사 솔레드 Manufacturing apparatus of semiconductor ring and manufacturing method of semiconductor ring using the same
KR20220059639A (en) * 2020-11-03 2022-05-10 주식회사 솔레드 Manufacturing apparatus of semiconductor ring and manufacturing method of semiconductor ring using the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850955A (en) * 1981-09-22 1983-03-25 株式会社フオ−ブレイン Resin capsule and apparatus for molding resin floor denture and crown
JPS5934659A (en) * 1982-08-20 1984-02-25 Toshiba Corp Solid-state image pickup device
JPH01157426A (en) * 1987-12-15 1989-06-20 Toshiba Ceramics Co Ltd Manufacturing device for quartz glass crucible
JPH01160836A (en) * 1987-12-17 1989-06-23 Tokyo Ceramics Kk Production of quartz glass crucible

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850955A (en) * 1981-09-22 1983-03-25 株式会社フオ−ブレイン Resin capsule and apparatus for molding resin floor denture and crown
JPS5934659A (en) * 1982-08-20 1984-02-25 Toshiba Corp Solid-state image pickup device
JPH01157426A (en) * 1987-12-15 1989-06-20 Toshiba Ceramics Co Ltd Manufacturing device for quartz glass crucible
JPH01160836A (en) * 1987-12-17 1989-06-23 Tokyo Ceramics Kk Production of quartz glass crucible

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0715342A3 (en) * 1994-11-30 1996-10-16 Heraeus Quarzglas Single-wafer heat-treatment apparatus and method of manufacturing reactor vessel used for same
US5651827A (en) * 1996-01-11 1997-07-29 Heraeus Quarzglas Gmbh Single-wafer heat-treatment apparatus and method of manufacturing reactor vessel used for same
WO2009054529A1 (en) 2007-10-25 2009-04-30 Japan Super Quartz Corporation Quartz glass crucible, method for manufacturing quartz glass crucible and application of quartz glass crucible
WO2009122936A1 (en) 2008-03-31 2009-10-08 ジャパンスーパークォーツ株式会社 Quartz glass crucible and process for producing the same
US8394198B2 (en) 2008-11-28 2013-03-12 Japan Super Quartz Corporation Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof
US8951346B2 (en) 2008-12-09 2015-02-10 Japan Super Quartz Corporation Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof
JP2013212992A (en) * 2008-12-19 2013-10-17 Shinetsu Quartz Prod Co Ltd Method of making silica crucible with pure and bubble-free crucible inner layer
US8562739B2 (en) 2008-12-29 2013-10-22 Japan Super Quartz Corporation Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof
KR20220041649A (en) * 2020-09-25 2022-04-01 주식회사 솔레드 Manufacturing apparatus of semiconductor ring and manufacturing method of semiconductor ring using the same
KR20220059639A (en) * 2020-11-03 2022-05-10 주식회사 솔레드 Manufacturing apparatus of semiconductor ring and manufacturing method of semiconductor ring using the same

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