JP2568756B2 - Semiconductor substrate surface impurity recovery system - Google Patents
Semiconductor substrate surface impurity recovery systemInfo
- Publication number
- JP2568756B2 JP2568756B2 JP2408117A JP40811790A JP2568756B2 JP 2568756 B2 JP2568756 B2 JP 2568756B2 JP 2408117 A JP2408117 A JP 2408117A JP 40811790 A JP40811790 A JP 40811790A JP 2568756 B2 JP2568756 B2 JP 2568756B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- gas
- container
- semiconductor
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Sampling And Sample Adjustment (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体基板表面の不純
物の超微量不純物分析用の試料を調整するための半導体
基板表面の不純物回収装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor for preparing a sample for analyzing a trace amount of impurities on the surface of a semiconductor substrate.
The present invention relates to a device for collecting impurities on a substrate surface .
【０００２】[0002]
【従来の技術】従来の半導体基板の表面の不純物回収装
置としては、例えば特開昭60-69531号公報に示されてい
る。図２はこの従来の半導体基板の表面の不純物回収装
置の概略縦断面図であり、図において、31は密閉容器、
32はその密閉容器31内に配設されたフッ化水素ガス発生
用フッ化水素酸貯蔵容器、33はウエハキャリアであり、
半導体基板を保持するためにある。34は分解液受容器で
あり、貯蔵容器32を加熱することによりフッ化水素ガス
を発生させて半導体薄膜を分解し、分解された分解液を
受容するためにある。2. Description of the Related Art A conventional apparatus for collecting impurities on the surface of a semiconductor substrate is disclosed, for example, in Japanese Patent Application Laid-Open No. 60-69531. FIG. 2 is a schematic longitudinal sectional view of the conventional impurity collecting apparatus for collecting impurities on the surface of a semiconductor substrate.
Reference numeral 32 denotes a hydrofluoric acid storage container for generating hydrogen fluoride gas disposed in the closed container 31, reference numeral 33 denotes a wafer carrier,
It is for holding a semiconductor substrate. Numeral 34 denotes a decomposition solution receiver for heating the storage container 32 to generate hydrogen fluoride gas to decompose the semiconductor thin film and receive the decomposed decomposition solution.
【０００３】[0003]
【発明が解決しようとする課題】このような従来の半導
体基板の表面の不純物回収装置では、フッ化水素ガスの
発生量を制御することができない。また、貯蔵容器32を
密閉容器31内に設置するため、密閉容器31の容積を大き
くする必要がある。またフッ化水素ガスを半導体基板の
表面で結露させ分解液を回収するために、多量のフッ化
水素ガスが必要である。さらに半導体基板の表面から内
部の深さ方向に分布する不純物を回収することができな
いという課題を有していた。In such a conventional apparatus for collecting impurities on the surface of a semiconductor substrate, the amount of hydrogen fluoride gas generated cannot be controlled. In addition, since the storage container 32 is installed in the closed container 31, it is necessary to increase the volume of the closed container 31. In addition, a large amount of hydrogen fluoride gas is required in order to condense hydrogen fluoride gas on the surface of the semiconductor substrate and collect a decomposition solution. Further, there is a problem that impurities distributed in a depth direction inside from the surface of the semiconductor substrate cannot be collected.
【０００４】本発明は上記課題を解決するもので、環境
からの汚染なしに容易に半導体基板の表面から内部の深
さ方向に分布する不純物の回収ができる半導体基板の表
面の不純物回収方法および不純物回収装置を提供するこ
とを目的とする。An object of the present invention is to solve the above-mentioned problems, and a method and a method for collecting impurities distributed on the surface of a semiconductor substrate from the surface of the semiconductor substrate easily without contaminating the environment. An object is to provide a recovery device.
【０００５】[0005]
【課題を解決するための手段】本発明は上記目的を達成
するために、密閉容器と、半導体基板の表面に酸化膜を
形成するガスを発生する薬品を貯蔵する少なくとも１つ
の貯蔵容器と、半導体基板の表面に形成された酸化膜を
分解するガスを発生する薬品を貯蔵する少なくとも１つ
の貯蔵容器と、上記各貯蔵容器と密閉容器とをそれぞれ
接続するガス供給管と、上記各貯蔵容器をそれぞれ加熱
する加熱手段と、上記各貯蔵容器にそれぞれ不活性ガス
を供給する配管とを備えた半導体基板表面の不純物回収
装置とする。 SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides an airtight container and an oxide film on the surface of a semiconductor substrate.
At least one for storing chemicals that generate gas forming
Storage container and the oxide film formed on the surface of the semiconductor substrate.
At least one for storing chemicals that generate gas that decomposes
Storage container, and each of the storage containers and the closed container described above.
Heat the gas supply pipe to be connected and each of the above storage containers
Heating means and an inert gas
Recovery of impurities on the surface of a semiconductor substrate provided with a pipe for supplying gas
Equipment.
【０００６】[0006]
【作用】本発明は上記した構成により、不純物を含まな
い高純度の過酸化水素ガスが半導体基板の表面を酸化
し、引き続き酸化膜を分解する高純度のフッ化水素ガス
を供給し半導体基板の表面の不純物を溶かした分解液が
得られることになる。According to the present invention, high purity hydrogen peroxide gas containing no impurities oxidizes the surface of a semiconductor substrate and subsequently supplies high purity hydrogen fluoride gas which decomposes an oxide film. A decomposed liquid in which impurities on the surface are dissolved is obtained.
【０００７】[0007]
【実施例】図１は本発明の一実施例における半導体基板
の表面の不純物回収装置の概略構成図である。FIG. 1 is a schematic diagram showing an apparatus for collecting impurities on the surface of a semiconductor substrate according to an embodiment of the present invention.
【０００８】図において、１は密閉容器、２、３は薬品
を貯蔵する貯蔵容器であり、貯蔵容器２、３と密閉容器
１はガス供給管４、５により接続されている。また貯蔵
容器２、３は不活性ガス配管６、７を備えている。半導
体基板８を半導体基板支持部９にのせ半導体基板押さえ
10で固定する。11は不活性ガス供給配管で、12は排出配
管である。13は純水を半導体基板の表面に定量的に供給
するための定量ポンプで、配管14から純水を供給して配
管15により密閉容器１内の半導体基板８上に滴下する。
16は分解液16aを採取する治具である。なお図におい
て、17,18は貯蔵容器２,３の加熱手段、19,20はガス供
給管４,５のバルプ、21は不活性ガス供給配管11のバル
ブ、22は半導体基板支持部９の回転手段である。In FIG. 1, reference numeral 1 denotes a closed container, and reference numerals 2 and 3 denote storage containers for storing chemicals. The storage containers 2 and 3 and the closed container 1 are connected by gas supply pipes 4 and 5, respectively. The storage containers 2 and 3 are provided with inert gas pipes 6 and 7, respectively. The semiconductor substrate 8 is placed on the semiconductor substrate supporting portion 9 and the semiconductor substrate is held down.
Fix at 10. 11 is an inert gas supply pipe, and 12 is a discharge pipe. Numeral 13 denotes a quantitative pump for quantitatively supplying pure water to the surface of the semiconductor substrate. Pure water is supplied from a pipe 14 and dropped on the semiconductor substrate 8 in the closed vessel 1 by a pipe 15.
Reference numeral 16 denotes a jig for collecting the decomposition solution 16a. In the drawing, reference numerals 17 and 18 denote heating means for the storage containers 2 and 3, 19 and 20 denote valves of the gas supply pipes 4 and 5, 21 denotes a valve of the inert gas supply pipe 11, and 22 denotes a rotation of the semiconductor substrate support 9. Means.
【０００９】以上のように構成されたこの実施例の半導
体基板の表面の不純物回収装置において、以下にその動
作を説明する。The operation of the apparatus for recovering impurities on the surface of a semiconductor substrate according to this embodiment constructed as described above will be described below.
【００１０】例えば、薬品を貯蔵する貯蔵容器２にフッ
化水素酸を満たしておき、貯蔵容器３に過酸化水素水を
満たしておく。加熱手段17,18によって加熱する。加熱
温度は30℃程度が好ましい。温度を上げ過ぎるとガスの
発生量は増加するが、ミストも発生しやすくなり、不純
物がそのミストと共に密閉容器１へ導入されてしまうか
らである。まずバルブ19は閉めておき、不活性ガスN2の
供給も行なわない。バルブ20を開き配管７よりN2を流し
密閉容器１内に過酸化水素ガスを供給する。過酸化水素
ガスにより半導体基板８は酸化される。このとき半導体
基板８の酸化速度は約0.5A／時間である。ある時間過酸
化水素ガスを供給した後、バルブ20を閉じる。次にバル
ブ21を開けN2ガスを密閉容器１内に供給して密閉容器内
の過酸化水素ガスをN2で置換する。過酸化水素ガスとフ
ッ酸ガスが共存されると半導体基板の表面の過酸化水素
ガスの濃度とフッ酸ガスの濃度の違いにより半導体基板
８の位置によるエッチング速度が異なり深さ方向の不純
物測定が困難となる。過酸化水素ガスを完全に置換した
後バルブ21を閉じ、バルブ19を開き分解ガスであるフッ
酸ガスを密閉容器１内へ供給する。フッ酸ガスにより酸
化膜分解完了後、バルブ19を閉じ、バルブ21を開き密閉
容器１内のフッ酸ガスをN2で置換する。次に回転手段22
により半導体基板支持部９を回転させる。続いて、配管
15より半導体基板８上に純水を滴下させる。従来フッ酸
ガスを半導体基板８の表面で結露させるために多量のフ
ッ酸ガスを供給する必要があったが、純水によってフッ
酸ガスで分解された不純物を溶解させることによりフッ
酸ガスの供給を減少させることができる。滴下させた後
回転を止め遠心力により半導体基板８の外周に集まった
分解液16aを治具16により採取する。その後、例えばフ
レームレス原子吸光でこの分解液16aの不純物を測定す
ることにより半導体基板８の表面の不純物濃度の測定を
行なうことができる。For example, a storage container 2 for storing a chemical is filled with hydrofluoric acid, and a storage container 3 is filled with a hydrogen peroxide solution. Heating is performed by heating means 17 and 18. The heating temperature is preferably about 30 ° C. If the temperature is too high, the amount of generated gas increases, but mist is easily generated, and impurities are introduced into the closed vessel 1 together with the mist. First valve 19 is previously closed, it does not perform the supply of the inert gas N 2. Open the valve 20 and supply N 2 from the pipe 7 to supply hydrogen peroxide gas into the closed vessel 1. The semiconductor substrate 8 is oxidized by the hydrogen peroxide gas. At this time, the oxidation rate of the semiconductor substrate 8 is about 0.5 A / hour. After supplying hydrogen peroxide gas for a certain time, the valve 20 is closed. Next, the valve 21 is opened, and N 2 gas is supplied into the closed container 1 to replace the hydrogen peroxide gas in the closed container with N 2 . When the hydrogen peroxide gas and the hydrofluoric acid gas coexist, the etching rate varies depending on the position of the semiconductor substrate 8 due to the difference between the concentration of the hydrogen peroxide gas and the concentration of the hydrofluoric acid gas on the surface of the semiconductor substrate. It will be difficult. After completely replacing the hydrogen peroxide gas, the valve 21 is closed, the valve 19 is opened, and hydrofluoric acid gas, which is a decomposition gas, is supplied into the closed vessel 1. After the decomposition of the oxide film by the hydrofluoric acid gas, the valve 19 is closed, the valve 21 is opened, and the hydrofluoric acid gas in the sealed container 1 is replaced with N 2 . Next, rotating means 22
To rotate the semiconductor substrate support 9. Next, plumbing
From step 15, pure water is dropped on the semiconductor substrate 8. Conventionally, a large amount of hydrofluoric acid gas had to be supplied in order to cause the hydrofluoric acid gas to condense on the surface of the semiconductor substrate 8, but the supply of hydrofluoric acid gas was accomplished by dissolving impurities decomposed by hydrofluoric acid gas with pure water. Can be reduced. After the dropping, the rotation is stopped and the decomposition solution 16a collected on the outer periphery of the semiconductor substrate 8 by centrifugal force is collected by the jig 16. Thereafter, the impurity concentration of the surface of the semiconductor substrate 8 can be measured by measuring the impurities of the decomposition solution 16a by, for example, flameless atomic absorption.
【００１１】以上のような構成および操作により密閉容
器１内で反応させるため、環境からの不純物による汚染
を低減することができ、微量の不純物量の測定が可能と
なる。また上記の過酸化水素ガスによる酸化工程、フッ
酸ガスによる分解工程、純水による分解液回収工程を繰
り返し行なうことにより、半導体基板８の表面から内部
の深さ方向の不純物濃度を知ることができる。Since the reaction is performed in the closed vessel 1 by the above configuration and operation, the contamination by impurities from the environment can be reduced, and the measurement of a trace amount of impurities becomes possible. Further, by repeatedly performing the above-described oxidation step using a hydrogen peroxide gas, a decomposition step using a hydrofluoric acid gas, and a decomposition liquid recovery step using pure water, the impurity concentration in the depth direction inside the semiconductor substrate 8 can be known from the surface of the semiconductor substrate 8. .
【００１２】なお、本発明の不純物回収装置を構成する
材料は半導体基板８の表面の不純物を測定する場合に妨
害となる不純物を含まないものであればいかなるもので
もよいが、特に酸性やアルカリ性のガスを用いることか
ら、フッ素系樹脂やその他高分子樹脂、例えばポリエチ
レンやポリプロピレン、またセラミックスや不動態化処
理を行なったステンレスで構成するのがよい。The material constituting the impurity recovery apparatus of the present invention may be any material as long as it does not contain an impurity which hinders the measurement of impurities on the surface of the semiconductor substrate 8. Since a gas is used, it is preferable to use a fluorine-based resin or other polymer resin, for example, polyethylene or polypropylene, ceramics, or passivated stainless steel.
【００１３】また過酸化水素ガスによる酸化工程を省い
て、フッ酸ガスのみを供給することにより、半導体基板
８の表面に付着した不純物のみを回収することができ
る。なお本実施例では酸化性ガスの原料として過酸化水
素を用いているが、酸化速度を変えるためにアンモニア
水、硝酸等を用いてもよいことは言うまでもない。By omitting the step of oxidizing with hydrogen peroxide gas and supplying only hydrofluoric acid gas, it is possible to collect only impurities adhering to the surface of the semiconductor substrate 8. Although hydrogen peroxide is used as a raw material of the oxidizing gas in this embodiment, it goes without saying that ammonia water, nitric acid, or the like may be used to change the oxidation rate.
【００１４】[0014]
【発明の効果】以上の実施例から明らかなように本発明
によれば、密閉容器外に設置された貯蔵容器から純度の
高い過酸化水素ガスとフッ素酸ガスを密閉容器内に供給
し、過酸化水素ガスによる酸化工程、フッ酸ガスによる
分解工程、分解液回収工程を繰り返し行なうことによ
り、半導体基板の表面から内部の深さ方向の微量な不純
物の分析が可能となる半導体基板の表面不純物回収方法
および不純物回収装置を提供できる。As is apparent from the above embodiments, according to the present invention, high-purity hydrogen peroxide gas and fluoric acid gas are supplied from a storage container provided outside a closed container into the closed container. By repeating the oxidation step using hydrogen oxide gas, the decomposition step using hydrofluoric acid gas, and the decomposition liquid recovery step, it becomes possible to analyze trace impurities in the depth direction from the surface of the semiconductor substrate to the inside of the semiconductor substrate. A method and an impurity recovery device can be provided.
【図１】本発明の一実施例における半導体基板の表面の
不純物回収装置の概略構成図FIG. 1 is a schematic configuration diagram of an apparatus for collecting impurities on a surface of a semiconductor substrate in one embodiment of the present invention.
【図２】従来の半導体基板の表面の不純物回収装置の概
略構成図FIG. 2 is a schematic configuration diagram of a conventional apparatus for collecting impurities on the surface of a semiconductor substrate.
１ 密閉容器 ２,３ 貯蔵容器 ４,５ ガス供給管 ６,７ 不活性ガスを供給する配管 ８ 半導体基板 ９ 半導体基板支持部 10 半導体基板押さえ 11 密閉容器内に不活性ガスを供給する配管 12 排出配管 13 定量ポンプ 17,18 加熱手段 22 回転手段 DESCRIPTION OF SYMBOLS 1 Closed container 2,3 Storage container 4,5 Gas supply pipe 6,7 Pipe for supplying inert gas 8 Semiconductor substrate 9 Semiconductor substrate support 10 Semiconductor substrate holder 11 Pipe for supplying inert gas into closed container 12 Discharge Piping 13 Metering pump 17, 18 Heating means 22 Rotating means
Claims (5)
を形成するガスを発生する薬品を貯蔵する少なくとも１
つの貯蔵容器と、半導体基板の表面に形成された酸化膜
を分解するガスを発生する薬品を貯蔵する少なくとも１
つの貯蔵容器と、上記各貯蔵容器と密閉容器とをそれぞ
れ接続するガス供給管と、上記各貯蔵容器をそれぞれ加
熱する加熱手段と、上記各貯蔵容器にそれぞれ不活性ガ
スを供給する配管とを備えたことを特徴とする半導体基
板表面の不純物回収装置。An airtight container and an oxide film on a surface of a semiconductor substrate.
At least one for storing a gas generating chemical forming a gas
Storage container and oxide film formed on the surface of semiconductor substrate
At least one storage agent for generating a gas that decomposes
Each storage container and each of the above storage containers and closed containers
Connect the gas supply pipes connected to
Heating means for heating, and inert gas
Semiconductor base, comprising:
Device for collecting impurities on the plate surface .
を設けたことを特徴とする請求項１に記載の半導体基板
表面の不純物回収装置。2. A means for holding a semiconductor substrate in an airtight container.
2. The semiconductor substrate according to claim 1, further comprising:
Surface impurity recovery device.
体基板を保持する手段を回転させる手段を設けたことを
特徴とする請求項１または２に記載の半導体基板表面の
不純物回収装置。3. The semiconductor device according to claim 1 , wherein said semiconductive container is provided outside said closed container.
Means for rotating the means for holding the body substrate is provided.
The apparatus for collecting impurities on a surface of a semiconductor substrate according to claim 1 or 2, wherein:
て密閉容器内の半導体基板に供給する定量ポンプを設け
たことを特徴とする請求項１、２または３に記載の半導
体基板表面の不純物回収装置。4. Purified water is passed through a pipe outside the closed container.
A metering pump to supply the semiconductor substrate in a closed container
4. The semiconductor according to claim 1, 2 or 3,
Device for collecting impurities on the surface of the body substrate .
と、密閉容器内のガスを排出する配管とを設けたことを
特徴とする請求項１〜４のいずれか１項に記載の半導体
基板表面の不純物回収装置。5. A pipe for supplying an inert gas into a closed container.
And a pipe for discharging gas from the closed container
The semiconductor according to any one of claims 1 to 4, characterized in that:
Device for collecting impurities on the substrate surface .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2408117A JP2568756B2 (en) | 1990-12-27 | 1990-12-27 | Semiconductor substrate surface impurity recovery system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2408117A JP2568756B2 (en) | 1990-12-27 | 1990-12-27 | Semiconductor substrate surface impurity recovery system |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17468796A Division JPH08321535A (en) | 1996-07-04 | 1996-07-04 | Recovery method of impurities |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04225526A JPH04225526A (en) | 1992-08-14 |
| JP2568756B2 true JP2568756B2 (en) | 1997-01-08 |
Family
ID=18517611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2408117A Expired - Fee Related JP2568756B2 (en) | 1990-12-27 | 1990-12-27 | Semiconductor substrate surface impurity recovery system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2568756B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3278513B2 (en) * | 1993-12-09 | 2002-04-30 | 株式会社東芝 | Method for analyzing impurities in semiconductor substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS617639A (en) * | 1984-06-22 | 1986-01-14 | Toshiba Corp | Decomposing device foe semiconductor thin film |
-
1990
- 1990-12-27 JP JP2408117A patent/JP2568756B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04225526A (en) | 1992-08-14 |
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