JP2551441B2 - シリコンのデンドライトウェッブ結晶を成長させる方法及び装置 - Google Patents

シリコンのデンドライトウェッブ結晶を成長させる方法及び装置

Info

Publication number
JP2551441B2
JP2551441B2 JP62306820A JP30682087A JP2551441B2 JP 2551441 B2 JP2551441 B2 JP 2551441B2 JP 62306820 A JP62306820 A JP 62306820A JP 30682087 A JP30682087 A JP 30682087A JP 2551441 B2 JP2551441 B2 JP 2551441B2
Authority
JP
Japan
Prior art keywords
slot
silicon
dendrite
web
boundary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62306820A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63144187A (ja
Inventor
ジェイムス・ポール・マックヒュー
レイモンド・ジョージ・サイデンスティッカー
チャールズ・スチュアート・ダンカン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EBARA SOORAA Inc
Original Assignee
EBARA SOORAA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EBARA SOORAA Inc filed Critical EBARA SOORAA Inc
Publication of JPS63144187A publication Critical patent/JPS63144187A/ja
Application granted granted Critical
Publication of JP2551441B2 publication Critical patent/JP2551441B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP62306820A 1986-12-05 1987-12-03 シリコンのデンドライトウェッブ結晶を成長させる方法及び装置 Expired - Lifetime JP2551441B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US938,651 1986-12-05
US06/938,651 US4751059A (en) 1986-12-05 1986-12-05 Apparatus for growing dendritic web crystals of constant width

Publications (2)

Publication Number Publication Date
JPS63144187A JPS63144187A (ja) 1988-06-16
JP2551441B2 true JP2551441B2 (ja) 1996-11-06

Family

ID=25471742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62306820A Expired - Lifetime JP2551441B2 (ja) 1986-12-05 1987-12-03 シリコンのデンドライトウェッブ結晶を成長させる方法及び装置

Country Status (7)

Country Link
US (1) US4751059A (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
JP (1) JP2551441B2 (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
KR (1) KR960000062B1 (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
AU (1) AU601511B2 (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
GB (1) GB2206503B (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
IN (1) IN168202B (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)
IT (1) IT1220052B (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN168114B (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) * 1986-12-18 1991-02-09 Westinghouse Electric Corp
US4997628A (en) * 1989-08-24 1991-03-05 Westinghouse Electric Corp. Web growth configuration for higher productivity and 100% feed rate capability at wide widths
US4971650A (en) * 1989-09-22 1990-11-20 Westinghouse Electric Corp. Method of inhibiting dislocation generation in silicon dendritic webs
US6093244A (en) * 1997-04-10 2000-07-25 Ebara Solar, Inc. Silicon ribbon growth dendrite thickness control system
DE69936883T2 (de) * 1999-02-02 2008-02-28 Ebara Corp. Vorrichtung zur reglung der schichtdicke eines dendrits während der züchtung eines siliziumbandes
KR20030060660A (ko) * 2002-01-10 2003-07-16 손정일 앞/뒷면 구별 없는 양면 양말
US7348076B2 (en) * 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
US7780782B2 (en) * 2007-06-08 2010-08-24 Evergreen Solar, Inc. Method and apparatus for growing a ribbon crystal with localized cooling
JP6025080B1 (ja) * 2015-12-26 2016-11-16 並木精密宝石株式会社 大型ｅｆｇ法用育成炉の熱反射板構造
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090868B (de) * 1958-10-15 1960-10-13 Siemens Ag Verfahren zum Ziehen von einkristallinen Halbleiterstaeben aus Schmelzen
GB1150095A (en) * 1965-10-14 1969-04-30 Dow Corning Apparatus for production of dentritic crystals
US3511610A (en) * 1966-10-14 1970-05-12 Gen Motors Corp Silicon crystal growing
GB1209846A (en) * 1967-02-14 1970-10-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments
US3617223A (en) * 1968-05-21 1971-11-02 Texas Instruments Inc Apparatus for forming monocrystalline ribbons of silicon
US4184907A (en) * 1977-03-17 1980-01-22 Mobil Tyco Solar Energy Corporation Control of capillary die shaped crystal growth of silicon and germanium crystals
US4217165A (en) * 1978-04-28 1980-08-12 Ciszek Theodore F Method of growing a ribbon crystal particularly suited for facilitating automated control of ribbon width
US4239734A (en) * 1978-07-13 1980-12-16 International Business Machines Corporation Method and apparatus for forming silicon crystalline bodies
US4271129A (en) * 1979-03-06 1981-06-02 Rca Corporation Heat radiation deflectors within an EFG crucible
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4389377A (en) * 1981-07-10 1983-06-21 The United States Of America As Represented By The United States Department Of Energy Apparatus for growing a dendritic web
US4402786A (en) * 1981-09-01 1983-09-06 Mobil Solar Energy Corporation Adjustable heat shield assembly
IN168114B (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) * 1986-12-18 1991-02-09 Westinghouse Electric Corp
US4828808A (en) * 1987-09-02 1989-05-09 The United States Of America As Represented By The United States Department Of Energy Apparatus for silicon web growth of higher output and improved growth stability

Also Published As

Publication number Publication date
US4751059A (en) 1988-06-14
JPS63144187A (ja) 1988-06-16
AU8098087A (en) 1988-06-09
AU601511B2 (en) 1990-09-13
GB2206503B (en) 1991-01-30
IT8741732A0 (it) 1987-12-02
IN168202B (c_deeref_Disk_and_Scratch_Disk_Pools_and_Their_Defaults.html) 1991-02-16
KR880007378A (ko) 1988-08-27
KR960000062B1 (ko) 1996-01-03
GB2206503A (en) 1989-01-11
GB8725962D0 (en) 1987-12-09
IT1220052B (it) 1990-06-06

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