JP2546178B2 - Leadless diode - Google Patents

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to improvements in the structure of leadless diodes.

[0002]

2. Description of the Related Art FIGS. 2 and 3 are sectional views showing the structure of a leadless diode using a glass tube as a case material and a slug lead as an external electrode in a conventional example. This type of diode, in which the semiconductor element 4 is sealed in the glass tube 11, is composed of the slugs 2a and 2b and the flange 3a.
The semiconductor element 4 is held in the glass tube 11 by using a pair of slag leads composed of the slag leads 3a and 3b, and the outer peripheral surfaces of the slugs 2a and 2b of the slag leads are held by the glass tube 11
The semiconductor element 4 is sealed in the glass tube 11 by welding.

This leadless diode has a sealing jig 1
The slag lead is inserted into the hole provided in 2 with the flange 3b facing down, then the glass tube 11 and the semiconductor element 4 are inserted, and the slug 2a is inserted with the flange 3a facing up to be sealed. Subsequently, the sealing jig is heated in a state where the semiconductor element 4 is sandwiched between the slugs 2a and 2b of both slag leads in the glass tube 11 to heat the glass tube 11 to the slag 2a.
And 2b are welded to the outer peripheral portion (Japanese Patent Publication No. 58-168269).

[0004]

Due to the structure of the semiconductor device, the microwave diode has an active area opening of φ10.
The size of the electrode structure is relatively small, that is, .mu.m to .phi.20 .mu.m.

Among them, the bump-shaped electrode product is generally used for a glass package product. In the case of this bump-shaped electrode product, since the opening of the active area is small, the adhesion strength at the connection portion with the bump-shaped electrode is weak at 30 to 60 gr, and the depth of the bonding portion is also weak, so it is weak against mechanical stress and the characteristics are degraded. It is easy to cause

Further, in terms of characteristics, in the case of a Schottky diode, due to its nature, there is a Schottky deterioration mode due to thermal stress, so heat must be taken into consideration. In the case of the conventional example described above, the slag lead is inserted into the case by using a pair of slag leads including the slag portion and the flange portion, and the slug portion is directly pressed onto the upper surface of the bump-shaped electrode of the semiconductor element, and the glass and the slag lead are connected. Is sealed at a high temperature (about 500 to 600 ° C.).

According to this method, as described above, in the microwave diode, when the slug portion is directly pressure-contacted due to the structure of the semiconductor element, an excessive load is applied to the bump-shaped electrode, and the joint portion is broken or the bump is broken by mechanical stress. There is a problem that characteristic deterioration is caused by damage to the shape electrode.

The present invention solves such a problem, and it is an object of the present invention to provide a leadless diode capable of reducing the influence of mechanical stress or thermal stress applied to a semiconductor element during assembly and preventing characteristic deterioration. To aim.

[0009]

According to the present invention, there is provided a tubular insulator, and two tubular insulators made of a conductive material which are inserted into the tubular insulator through openings on both sides and fixed to the tubular insulator. In a leadless diode comprising a slug and a semiconductor element that is disposed inside the tubular insulator and is pressure-contacted between the two slugs, a conductive material is provided between an electrode of the semiconductor element and an end surface of the slug. It is characterized in that a C bend formed in a C shape by an elastic material is inserted.

It is preferable that the tubular insulator is provided with a flange formed of a prismatic ceramic material and fixed to the slugs to seal openings on both sides of the tubular insulator.

[0011]

Since the semiconductor element is sealed in the cylindrical insulator by the slag lead constituted by the slag and the flange with the elastic C bend interposed, the dimensional variation of the component parts is absorbed and the semiconductor element is transferred to the semiconductor element. It is possible to set the responsive pressure of within a predetermined range. Therefore, the mechanical stress applied to the semiconductor element is maintained at an appropriate value, the damage of the joint portion and the damage of the electrode are eliminated, and the characteristic deterioration is prevented.

Further, by using a ceramic material instead of the glass tube for the cylindrical insulator, the heating temperature at the time of brazing each joint can be lowered, so that the thermal stress is reduced and the semiconductor is reduced. Since the element does not need to be exposed to high temperatures, deterioration due to heating during processing can be avoided.

[0013]

Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a diagram showing a configuration of an embodiment of the present invention.

In the embodiment of the present invention, a tubular insulator 1 and two slugs 2a made of a conductive material and fixed to the tubular insulator 1 are inserted into the tubular insulator 1 through openings on both sides thereof. 2b and a semiconductor element 4 arranged inside the cylindrical insulator 1 and pressed between the two slugs 2a and 2b. Further, as a feature of the present invention, an electrode of the semiconductor element 4 and the slug 2a, A C-bend 5 formed in a C shape by a conductive elastic material is interposed between the end surface of 2b, and the cylindrical insulator 1 is formed by a prismatic ceramic material, and the slag 2 is formed.
It is provided with flanges 3a and 3b which are fixed to a and 2b respectively and seal the openings on both sides of the tubular insulator 1.

Here, the manufacturing process of the embodiment of the present invention will be described with reference to the drawings.

A semiconductor element 4 provided with bump-shaped electrodes 4a is adhered and fixed to a die mount portion of a slag lead constituted by a slag 2a and a flange 3a by a brazing material such as silver-tin alloy, which is formed of prismatic ceramics. The cylindrical insulator 1 is inserted from one end face side. At this time, the end surface of the cylindrical insulator and the contact surface of the flange 3a are Au,
It is brazed with a brazing material containing Sn as a main component.

Further, a slug 2b, a flange 3b, and a slag lead constituted by a C-bend 5 are inserted from the other end face side of the tubular insulator 1 to hit the end face of the tubular insulator 1 and the flange 3b. Similarly, the surface is brazed with a brazing material.

As described above, the elastic metal plate material (width 100 μm in this embodiment) is provided at the tip of the slag 3b of the slag lead.
Since it is brazed from a C bend 5 formed to have a thickness of 75 m and a thickness of 75 μm, the C bend 5 and the bump-shaped electrode 4a of the semiconductor element 4 come into contact with each other with a predetermined pressing force. The flange 3b has a sealing weight of 10 to 10 from above.
With a weight of about 15 gr, brazing filler metal is used.
It is heated at a temperature of 00 to 350 ° C., and the tubular insulator 1 is sealed by the flange 3b.

At this time, if the weight is about 7 gr or less, the contact pressure between the C bend 5 and the electrode 4a is weakened so that an electric open is likely to occur, and if it is 18 gr or more, the weight is too large and the C bend 5 has a large load. Since the shape is deformed or damaged, it is desirable to set the above-mentioned 10 to 15 gr.

Since the cylindrical insulator 1 is made of ceramic, it is possible to weld the flange by 50.
While heating at 0 to 600 ° C. was required, brazing to a ceramic material should have a temperature of 300 to 350 ° C.,
Deterioration of characteristics due to high temperature is prevented, and further, by making the shape into a prismatic shape, stability during mounting can be obtained.

[0021]

As described above, according to the present invention, when the semiconductor element is inserted and sealed in the cylindrical insulator, the elastic C-bend and the electrode come into contact with each other, so that each component is Unreasonable mechanical stress is relieved to prevent the deterioration of characteristics due to breakage or damage, and by using a ceramic material for the cylindrical insulator, it is possible to prevent The heating temperature can be reduced to about half that of the conventional one, and there is an effect that characteristic deterioration caused by the influence of heat and stress due to the heat can be avoided. Furthermore, it is easy to form the cylindrical insulator into a prismatic shape, and it is possible to obtain stability when mounting on a substrate or the like.

[Brief description of drawings]

FIG. 1 is a sectional view showing the configuration of an embodiment of the present invention.

FIG. 2 is a sectional view showing a configuration of a conventional example.

FIG. 3 is a sectional view illustrating an assembly process in a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Cylindrical insulator 2a, 2b Slug 3a, 3b Flange 4 Semiconductor element 4a Electrode 5 C bend 11 Glass tube 12 Sealing jig

Claims (3)

(57) [Claims] 1. A tubular insulator, two slugs made of a conductive material, inserted into the inside of the tubular insulator through openings on both sides and fixed to the tubular insulator, and the tubular insulator. In a leadless diode having a semiconductor element disposed inside of the slug and press-contacted between the two slugs, the leadless diode being formed in a C shape by a conductive elastic material between an electrode of the semiconductor element and an end surface of the slug. A leadless diode, in which a C-bend is inserted. 2. The leadless diode according to claim 1, wherein the tubular insulator is made of a prismatic ceramic material. 3. The leadless diode according to claim 1, further comprising flanges that are fixed to the slugs and seal openings on both sides of the tubular insulator.