JP2531024Y2 - Eutectic heating bonding equipment for ceramic substrates - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial application field) The present invention relates to a eutectic heating bonding apparatus for a ceramic substrate used in a step of eutectic bonding of an electronic component to a ceramic substrate, and particularly to a eutectic heating bonding apparatus for a ceramic substrate. It relates to a means for heating the deformation so that it does not crack.

(Prior Art) As a mounting means of an electronic component, it is known that a substrate is heated to a eutectic temperature by a heating device and then the electronic component is eutectic bonded to the substrate. The eutectic temperature is generally quite high, so this type of heating device is first heated to a certain temperature by a pre-heating device so that the substrate does not thermally deform due to rapid temperature changes and cracks and cracks do not occur. After that, it is sent to the main heating device, where it is heated to the eutectic temperature and eutectic bonding is performed.
After heating is applied.

(Problems to be Solved by the Invention) Each of the above heating devices is provided with a heat block, and a substrate is placed on the heat block to heat the substrate. However, in the case of a ceramic substrate,
When this is placed on a heat block, the lower surface that is grounded to the upper surface of the heat block is heated more rapidly than the upper surface, so distortion occurs due to the difference in thermal expansion between the upper surface side and the lower surface side, causing cracks and cracks. There was a problem that easily occurred.

As a means for solving such a problem, it is conceivable to heat the ceramic substrate more slowly and cool it more slowly. However, doing so results in an increase in the size of the equipment and a longer operation time. .

Therefore, an object of the present invention is to provide a heating device capable of preventing a ceramic substrate on a heat block from being cracked or cracked due to a rapid temperature change.

(Means for Solving the Problems) For this purpose, the present invention provides a plurality of ribs for supporting a ceramic substrate on an upper surface of a heat block provided in a pre-heating device and an after-heating device. Formed on the upper surface of the heat block, a blowing hole for blowing a reducing gas sent into the heat block and warmed by a heater built in the heat block toward the ceramic substrate mounted on the rib. It is.

(Operation) According to the above configuration, the ceramic substrate is first placed on the rib protruding from the upper surface of the heat block in the preheating device, and the ceramic substrate is moved upward and downward by the reducing gas blown out from the blowout hole on the upper surface of the heat block. Both sides are heated by the ambient temperature. Next, the ceramic substrate is heated to the eutectic temperature in the main heating device, and the electronic component is eutectic bonded. Next, it is sent onto the ribs of the heat block of the after-heating device, where it is heated from both upper and lower surfaces at the ambient temperature by a relatively low-temperature reducing gas blown from the upper surface of the heat block, similarly to the pre-heating device.

(Example) Next, an example of the present invention will be described with reference to the drawings.

FIG. 1 is an overall plan view of a die bonding apparatus, and FIG. 2 is a side view of a heating apparatus. Reference numeral 1 denotes a conveyor for transporting a ceramic substrate 2, and a pre-heating apparatus 3 and a main The heating device 4 and the after-heating device 5 are provided side by side. The ceramic substrate 2 is preheated in a preheating device 3 and then in a main heating device 4.
Heated to eutectic temperature. At a position orthogonal to the main heating device 4, a supply unit 6 for electronic components equipped with the wafer 9 is provided.
, A die ejector 7, and an alignment unit 8. A transfer head 10 reciprocates between the die ejector 7 and the alignment unit 8.
The electronic component on the wafer 9 pushed up by the pins is picked up and transferred to the alignment unit 8, where the alignment unit 8 observes or corrects the displacement of the electronic component in the xyθ direction. Reference numeral 11 denotes a mount head that picks up electronic components of the alignment unit 8,
It is transferred and mounted on the ceramic substrate 2 of the main heating device 4.
P is an electronic component mounted on the ceramic substrate 2 by eutectic bonding.

In FIG. 2, the preheating device 3 is a heat block.
The ceramic substrate 2 is preheated to 150 to 200 ° C. The main heating device 4 is also provided with a cover 18 above the heat block 17.
And heats the ceramic substrate 2 to the eutectic temperature. The eutectic temperature varies depending on the bonding material. For example, in the case of eutectic of gold and silicon, it is about 370 ° C.
It is.

Reference numeral 20 denotes a positioning portion of the ceramic substrate 2, which comprises moving tables 21 and 21 which move in the X and Y directions, on which a heat block 17 is installed. Reference numeral 11 denotes the mount head, which is an opening 23 formed in the cover body 18.
Then, the electronic component P is eutectic bonded to the ceramic substrate 2 positioned above the heat block 17.

Reference numeral 24 denotes a camera arranged above the cover body 18,
Observe the displacement of the ceramic substrate 2 and the like. 25 is a blower, which blows out air to eliminate the heat haze,
Thereby, the ceramic substrate 2 can be clearly observed. The after-heating device 5 also includes a heat block 26 and a cover body 27. The ceramic substrate 2 on which the electronic components P are mounted is sent to the heating device 5 and after-heated, and then carried out to the next step. You. 15a, 17a and 26a are heaters built in each of the heat blocks 15, 17, and 26.

Each of the heating devices 3, 4, and 5 heats the ceramic substrate 2 to the eutectic temperature and gradually cools it. A reducing gas such as nitrogen gas is sent through the pipe 19. That is, the reducing gas is sent from the pipe 19 to the inside of the heat blocks 15, 17, 26, and the heaters 15a,
After being heated by 17a, 26a, heat block 15,1
The ceramic substrate 2 is heated by blowing out from the upper surface of 7,26.

FIG. 3 and FIG. 4 show the heat blocks 15 and 26 provided in the preliminary heating device 3 and the after-heating device 5, respectively. The slit 30 is formed in the ceramic substrate 2 so that it can be easily cut in a later step. The heat blocks 15 and 26 are substantially box-shaped, and have ribs 3 on the upper surface.
1 has a plurality of protrusions. The ceramic substrate 2 is placed on the rib 31 and heated.
The projection 31 is provided so that its length direction coincides with the transport direction N of the ceramic substrate 2 so that sliding friction with the ceramic substrate 2 transported on its upper surface is reduced. 32 is a large number of blow holes opened on the upper surface of the heat block,
The reducing gas blown into the heat blocks 15 and 26 from the pipe 19 is heated by the heaters 15a and 26a and blows out from the blowout holes 32, thereby heating the substrate 2 from both upper and lower surfaces at the ambient temperature. As described above, the heat block 15 of the pre-heating device 3 and the heat block 26 of the after-heating device 5 have the same structure, but the heat block 17 of the main heating device 4 has a rib 31 protruding from its upper surface. Therefore, the ceramic substrate 2 is grounded on the upper surface thereof, and the blowout holes are formed only at the edge of the heat block 17 so that the reducing gas flows around the substrate 2 placed thereon. (See arrow (a) in FIG. 2).

The present apparatus is configured as described above, and the operation will be described next.

The ceramic substrate 2 is transported by the conveyor 1,
The pre-heating device 3 is placed on the rib 31 of the heat block 15. A reducing gas heated to a predetermined temperature is blown out from a blowing hole 32 on the upper surface of the heat block 15, and the ceramic substrate 2 is heated at a desired temperature (for example,
150-200 ° C). Here, the ceramic substrate 2 is not grounded on the heat block 15 but is slightly grounded on the rib 31. Therefore, the upper surface of the ceramic substrate 2 is heated by the ambient temperature of the high-temperature gas, but the lower surface is heated not by the direct heating by the heat block 15 but by the ambient temperature, similarly to the upper surface. As a result, a difference in thermal expansion occurs between the upper surface side and the lower surface side, so that the ceramic substrate 2 is not thermally deformed and cracks and cracks do not occur.

The preheated ceramic substrate 2 is subsequently sent to a main heating device 4 where the substrate 2 is heated to a eutectic temperature and the transfer head 11 eutectically bonds the electronic components. The substrate 2 is grounded on the upper surface of the heat block 17, so that the lower surface of the substrate 2 is heated by the conduction heat from the heat block 17, and the upper surface is heated by the ambient temperature of the high-temperature gas. A rib 31 is also formed on the upper surface of the heat block 17 of the main heating device 4, similarly to the pre-heating device 3 and the heat blocks 15 and 26 of the after-heating device 5, and the ceramic substrate 2 is placed on the rib 31. Heating may be considered in the same manner as the preheating device 3 or the after-heating device 5, but in this case, the portion of the lower surface of the substrate 2 that is grounded to the rib 31 is heated more strongly by conduction heat than the portion to be grounded. As a result, the temperature of the substrate 2 varies in place, and the eutectic bonding cannot be performed uniformly over the entire surface. Therefore, it is better not to form the ribs 31 on the heat block 17 of the main heating device 4.

In the main heating device 4, the ceramic substrate 2 after the eutectic bonding is subsequently sent to the after-heating device 5, where it is cooled at a lower temperature (for example, 200 ° C.) so as not to be rapidly cooled. Heated. Since the ribs 31 are also formed on the heat block 26, the upper and lower surfaces of the ceramic substrate 2 are gradually cooled by a relatively low ambient temperature. Then, the cooled substrate 2 is sent to the next step.

(Effect of the Invention) As described above, the eutectic heating bonding apparatus for a ceramic substrate according to the present invention includes a plurality of ribs for supporting the ceramic substrate on the upper surface of a heat block provided in a pre-heating apparatus and an after-heating apparatus. And a blowing hole for blowing the reducing gas warmed by the heat block toward the ceramic substrate mounted on the ribs is formed on the upper surface of the heat block. In the after-heating device, the lower surface of the ceramic substrate partially supported by the ribs is heated by the ambient temperature almost in the same manner as the upper surface without being directly heated by the heat block. Approximately equal, so there is little difference in thermal expansion and contraction between the upper and lower surfaces, and the ceramic substrate is cracked by thermal deformation And cracking can be prevented.

[Brief description of the drawings]

FIG. 1 shows an embodiment of the present invention. FIG. 1 is a plan view of a bonding apparatus, FIG. 2 is a side view of a heating apparatus, FIG. 3 is a perspective view of a heat block, and FIG. It is sectional drawing. 2 Ceramic substrate 3 Preheating device 4 Main heating device 5 After heating device 15, 17, 26 Heat block 15 a, 17 a, 26 a Heater 31 Rib 32 Blow-out hole

Claims (1)

(57) [Scope of request for utility model registration] 1. A pre-heating device, a main heating device, and an after-heating device are arranged side by side along a conveyance path of a ceramic substrate by a conveyor, and a ceramic substrate is placed on each of these heating devices and heated. In the eutectic heating bonding apparatus for the ceramic substrate, which is provided with a heat block and a cover body is disposed on the upper side of these heat blocks, on the upper surface of the heat block provided in the preliminary heating device and the after-heating device, Along with projecting a plurality of ribs that support the ceramic substrate, on the upper surface of this heat block, sent to the inside of this heat block,
A eutectic heating bonding apparatus for a ceramic substrate, wherein a blow-out hole for blowing a reducing gas heated by a heater built in the heat block toward the ceramic substrate mounted on the rib is formed.